CN106134490B - Photoconduction diamond film switch - Google Patents
Photoconduction diamond film switchInfo
- Publication number
- CN106134490B CN106134490B CN201110016436.6A CN201110016436A CN106134490B CN 106134490 B CN106134490 B CN 106134490B CN 201110016436 A CN201110016436 A CN 201110016436A CN 106134490 B CN106134490 B CN 106134490B
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- China
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- photoconductive switch
- switch
- thin film
- semiconductive thin
- negative pole
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Abstract
The present invention is a kind of photoconduction diamond film switch, belongs to photoconductive switch technical field, is specifically related to a kind of photoconductive switch device of new structure. comprise semiconductive thin film (1), the positive pole (2) of photoconductive switch negative pole (4) and photoconductive switch, photoconductive switch negative pole (4) is connected on semiconductive thin film (1), the positive pole (2) of photoconductive switch is connected to semiconductive thin film (1), its feature in, between photoconductive switch negative pole (4) and semiconductive thin film (1), add layer of gold diamond film (5), the positive pole (2) of photoconductive switch and photoconductive switch negative pole (4) are connected to the both sides of semiconductive thin film (1), and the positive pole of photoconductive switch (2) is separated with distance mutually with photoconductive switch negative pole (4). life-span improved a magnitude compared to conventional light guides switch, experiment shows that in the present invention, photoconductive switch can use nearly ten thousand times, than significantly improving the service life of conventional light guides switch nearly thousand times.
Description
Technical field
The invention belongs to photoconductive switch technical field, the photoconduction that is specifically related to a kind of new structure is openedClose device.
Background technology
Photoconductive semiconductor switches (abbreviation photoconductive switch) is that one is utilized pulsed laser energy excitationPhotoconduction (semiconductor) material, undergos mutation its electrical conductivity, thereby produces three ends of electric pulsePhotoelectric device.
Normally semiconductor of the light-guide material of photoconductive switch. While thering is no illumination, in inclined to one side depress switchIn off-state, after laser pulses irradiate, in semi-conducting material, produce photo-generated carrier,Form a large amount of electron-hole pairs, resistivity of material bust, makes the instantaneous conducting of switch, circuitThe current impulse of output high-peak power, because photoconductive switch can automatically shut down, ON timeExtremely short, output pulse width reaches even femtosecond magnitude of psec, and pulse rise time is by triggering lightPulse front edge and material property determine. The array being made up of photoconductive switch and antenna integrated unit isSystem, can obtain ultra broadband, high power, high efficiency directed radiation.
Utilize ultrashort laser pulse synchronously to trigger photoconductive switch array and produce super-broadband electromagnetic impulse,And adopt the radiation of Real-time Delay technology control impuls. Due to optical-fiber laser control ultra broadband electromagnetism arteries and veinsPunching, makes this class microwave device have many advantages, is controlling and realized reason between controllingThink isolation; There is no huge array-fed system; Avoid electromagnetic interference; Desirable ultrahigh speedResponse; At 1 picosecond electric pulse of having realized non-jitter aspect time control, realize time delay battle arrayRow radiation; And there is a very high power-density capacity; And efficiency is high, volume is little, lightweight,The advantages such as integrability.
But meanwhile, photoconductive switch adopts coplanar-electrode structure mostly at present, and withstand voltage properties is not high enough;Life-span generally falls short of, and is about at present the life-span that nearly thousand subpulses excite; Meanwhile, due to photoconductionMaterial mostly is gallium arsenide semiconductor, has caused excitation laser can only be limited to very narrow wavelength modelEnclose. These factors above, have limited photoconductive switch at high power pulse generation technology and terahertzThe hereby further application of the aspect such as technology.
Summary of the invention
The object of the present invention is to provide a kind of long-life, wide spectrum, high pressure resistant, switching speedFast novel light switching device.
A kind of photoconduction diamond film switch, comprises semiconductive thin film, photoconductive switch negative pole and photoconductionThe positive pole of switch, photoconductive switch negative pole is connected on semiconductive thin film, and the positive pole of photoconductive switch connectsBe connected on semiconductive thin film, its feature in, between photoconductive switch negative pole and semiconductive thin film, addLayer of gold diamond film, the positive pole of photoconductive switch and photoconductive switch negative pole are connected to semiconductor filmThe both sides of film, and the positive pole of photoconductive switch is separated with distance mutually with photoconductive switch negative pole.
Between photoconductive switch negative pole and diamond film and semiconductive thin film and diamond film itBetween all added an intermediate metal.
On semiconductive thin film, on the face of Ear Mucosa Treated by He Ne Laser Irradiation, cover one deck printing opacity protection glue-line.
Remarkable result of the present invention is: the present invention due to negative pole 4 and semiconductive thin film 1 itBetween added layer of gold diamond film, the life-span of photoconductive switch is carried compared to conventional light guides switchA high magnitude, experiment shows that in the present invention, photoconductive switch can use nearly ten thousand times, than traditional lightLeading the service life of switch nearly thousand times significantly improves; Because the thermal conductivity of diamond thin 5 is high,Improve the integral heat sink performance of photoconductive switch of the present invention; Because electrode is taked antarafacial structure,Improve the withstand voltage properties of switch; Because the energy gap of diamond film 5 is larger, therefore wholeSwitch can be in very wide spectral range work; Photoconductive switch of the present invention also has response simultaneouslyThe advantages such as speed is fast.
Brief description of the drawings
Fig. 1, for structural representation of the present invention;
Fig. 2, be embodiment of the present invention structural representation.
Wherein, 1 is semiconductive thin film, 2 positive poles that are photoconductive switch, and 3 is laser, 4 is lightLead switch negative pole, 5 is diamond film, and 6 is intermediate metal, and 7 is printing opacity protection glue-line.
Detailed description of the invention
A kind of photoconduction diamond film switch, comprises semiconductive thin film 1, photoconductive switch negative pole 4 andThe positive pole 2 of photoconductive switch, photoconductive switch negative pole 4 is connected on semiconductive thin film 1, and photoconduction is openedThe positive pole 2 closing is connected to semiconductive thin film 1, its feature in, photoconductive switch negative pole 4 and halfBetween conductor thin film 1, add layer of gold diamond film 5, positive pole 2 and the photoconductive switch of photoconductive switchNegative pole 4 is connected to the both sides of semiconductive thin film 1, and positive pole 2 and the photoconduction of photoconductive switchSwitch negative pole 4 is separated with distance mutually.
Between photoconductive switch negative pole 4 and diamond film 5 and semiconductive thin film 1 and diamondBetween film 5, all add an intermediate metal 6.
On the face that laser 3 irradiates on semiconductive thin film 1, cover one deck printing opacity protection glue-line 7.
The object of the present invention is to provide a kind of long-life, wide spectrum, high pressure resistant, switching speedFast novel light switching device.
Technical scheme of the present invention is as follows:
First, between photoconductive switch negative pole 4 of the present invention and semiconductive thin film 1, add one deckDiamond film, the thickness of this diamond film is in micron dimension.
Secondly, be different from conventional photoconductive switch, at semiconductive thin film homonymy, positive and negative electrode be set, thisThe positive pole 2 of invention photoconductive switch and negative pole 4 are arranged on the heteropleural of semiconductive thin film 1.
Finally, between negative pole 4 and diamond film 5 and semiconductive thin film 1 and diamond filmBetween 5, add transition zone.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
As shown in figure mono-, the present invention is at two blocks of electricity of heteropleural growth of Semiconductor GaAs material 1The utmost point, respectively as positive pole 2 and negative pole 4; Between negative pole 4 and GaAs material 1, grow oneLayer diamond film 5, the thickness of this diamond film 5 is in micron dimension, and this layer of diamond film 5 canImprove a magnitude compared to conventional light guides switch with the life-span that makes photoconductive switch, by traditionThe life-span of nearly thousand times of photoconductive switch is brought up to photoconductive switch in the present invention and can use nearly ten thousand times; ?Between negative pole 4 and diamond film 5 and between semiconductive thin film 1 and diamond film 5, addedCross layer, as materials such as gold, to increase diamond film 5 and negative pole 4 and diamond film 5 and halfVan der Waals force between conductor thin film 1, thus play the effect of fixed diamond film 5; Meanwhile,Laser 3 irradiation areas as shown in Figure 1, cover one deck printing opacity protection glue-line, to avoid sparking.
Photoconductive switch of the present invention, through configuration above, overall Ohmic resistance is less than 2 ohm.The present invention, except the life-span is long, because the thermal conductivity of diamond thin 5 is high, will have betterIntegral heat sink performance; And because the energy gap of diamond film 5 is larger, therefore whole openingPass can be in very wide spectral range work; The present invention adopts the electrode of antarafacial structure, can keep awayExempt from surface breakdown, thereby improved the withstand voltage properties of photoconductive switch, its withstand voltage is from traditionalBring up to 15000 volts less than 10000 volts; Meanwhile, photoconductive switch of the present invention also has response speedSpend the advantages such as fast.
Claims (3)
1. a photoconduction diamond film switch, comprises that semiconductive thin film (1), photoconductive switch are negativeThe positive pole (2) of the utmost point (4) and photoconductive switch, photoconductive switch negative pole (4) is connected to semiconductor filmFilm (1) is upper, and the positive pole (2) of photoconductive switch is connected to semiconductive thin film (1), its feature in,Between photoconductive switch negative pole (4) and semiconductive thin film (1), add layer of gold diamond film (5),The positive pole (2) of photoconductive switch is connected to semiconductive thin film (1) with photoconductive switch negative pole (4)Both sides, and the positive pole of photoconductive switch (2) is separated with distance mutually with photoconductive switch negative pole (4).
2. photoconduction diamond film switch according to claim 1, is characterized in that,Between photoconductive switch negative pole (4) and diamond film (5) and semiconductive thin film (1) with goldBetween diamond film (5), all add an intermediate metal (6).
3. photoconduction diamond film switch according to claim 1, is characterized in that,On the face that the upper laser (3) of semiconductive thin film (1) irradiates, cover one deck printing opacity protection glue-line (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110016436.6A CN106134490B (en) | 2011-12-30 | 2011-12-30 | Photoconduction diamond film switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110016436.6A CN106134490B (en) | 2011-12-30 | 2011-12-30 | Photoconduction diamond film switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106134490B true CN106134490B (en) | 2014-03-19 |
Family
ID=57251065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110016436.6A Active CN106134490B (en) | 2011-12-30 | 2011-12-30 | Photoconduction diamond film switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106134490B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129178A (en) * | 2019-12-26 | 2020-05-08 | 西安交通大学 | Bulk structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN111129185A (en) * | 2019-12-26 | 2020-05-08 | 西安交通大学 | Different-surface structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN114251980A (en) * | 2021-12-22 | 2022-03-29 | 电子科技大学 | Device for interfering and damaging cluster unmanned aerial vehicle |
| CN114267749A (en) * | 2021-12-22 | 2022-04-01 | 电子科技大学 | Photoconductive semiconductor switch based on graphene film |
-
2011
- 2011-12-30 CN CN201110016436.6A patent/CN106134490B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129178A (en) * | 2019-12-26 | 2020-05-08 | 西安交通大学 | Bulk structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN111129185A (en) * | 2019-12-26 | 2020-05-08 | 西安交通大学 | Different-surface structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN111129185B (en) * | 2019-12-26 | 2021-09-07 | 西安交通大学 | Different-surface structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN111129178B (en) * | 2019-12-26 | 2021-09-07 | 西安交通大学 | Bulk structure GaAs photoconductive switch based on graphene interface layer and preparation process thereof |
| CN114251980A (en) * | 2021-12-22 | 2022-03-29 | 电子科技大学 | Device for interfering and damaging cluster unmanned aerial vehicle |
| CN114267749A (en) * | 2021-12-22 | 2022-04-01 | 电子科技大学 | Photoconductive semiconductor switch based on graphene film |
| CN114251980B (en) * | 2021-12-22 | 2022-12-27 | 电子科技大学 | Device for interfering and damaging cluster unmanned aerial vehicle |
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Legal Events
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| GR03 | Grant of secret patent right | ||
| GR03 | Grant of secret patent right | ||
| DC01 | Secret patent status has been lifted | ||
| DCSP | Declassification of secret patent |