CN109994568A - A kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture - Google Patents
A kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 60
- 238000009413 insulation Methods 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002019 doping agent Substances 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 3
- 230000000737 periodic effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 17
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000007787 solid Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
- H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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Abstract
The invention discloses a kind of laser triggering high-power half of stack architecture insulation AlGaN/GaN switches, including SiC substrate, GaN base layer, AlGaN layer in uneven thickness, high concentration GaN doped layer and ohmic contact metal layer, GaN base layer and AlGaN layer constitute Well structure, the AlGaN layer stack architecture of different-thickness realizes that doped layer is the one layer of high-dopant concentration n grown in AlGaN layer by etching+GaN layer, n+- GaN doped layer surface deposition has ohmic contact metal layer, and being uniformly distributed for electric field between electrodes may be implemented in stack architecture, and carrier mobility can be improved in different AlGaN layer thickness periodic structures；The operating voltage of stack architecture laser triggering high-power half insulation AlGaN/GaN switch of the invention reaches 42kV, and conducting resistance is 22 Ω, can expand it and apply in solid pulse power field.
Description
Technical field
The invention belongs to semiconductor device application field, the laser triggering for relating in particular to a kind of stack architecture is high-power
Semi-insulating AlGaN/GaN switch.
Background technique
Under the promotion of high new equipment (such as electromagnetic pulse simulator), physical study, industrial requirement etc., solid state pulse function
Rate technology receives significant attention, and each major technique power puts into a large amount of manpower and material resources and carries out correlative study work, achieves more
The landmark technological progress of item, application field also obtain rapid expansion.Solid pulse power technology is mainly repeated towards height
Frequency, high-average power, miniaturization, modularization, the direction of long life are developed.Currently, high repetition frequency, high-average power
Solid pulse power source technology studies the hot spot for having become Pulse Power Techniques research field, is included in multiple emphasis countries, the U.S.
Plan of science and technology.Develop the solid pulse power device of high repetition frequency, high-average power, high-energy density, switch is most critical
Device.
Compared with other solid switches (such as power semiconductor switch, semiconductor opening switch, magnetic switch), laser triggering
High-power semiconductor switch have it is small in size, repetition rate performance is good, closing time short (ps magnitude), small (the ps amount of time jitter
Grade), switched inductors low (sub- nanohenry), synchronization accuracy high (ps magnitude), Electro Magnetic Compatibility it is strong, make laser triggering high power semi-conductor
Switch has more wide application prospect on solid-state compact pulse power supply.
But the high-power GaN base switch power of laser triggering made at present and service life are lower, this is mainly due to laser
It is larger caused to trigger high-power GaN base switch conduction resistance.The high-power GaN base of laser triggering switchs biggish conducting resistance meeting
The generation for leading to Joule heating phenomenon under switch working state causes high-power two electric field between electrodes of GaN base switch of laser triggering
It is unevenly distributed situation aggravation, and then the thermal damage of the high-power GaN base switch of laser triggering and thermal breakdown, serious reduce is caused to swash
Light triggers the service life of high-power GaN base switch.
Summary of the invention
The purpose of the present invention is on the basis of existing technology, a kind of novel stack architecture laser triggering high-power half insulation
AlGaN/GaN switch is switched by the high-power GaN base of production stack architecture laser triggering, can effectively reduce the big function of laser triggering
The conducting resistance of rate GaN base switch, greatly improves switch life.
To achieve the goals above, the present invention uses following technological means:
A kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture, comprising: SiC substrate, GaN base layer, thickness
Spend non-uniform AlGaN layer, high concentration GaN doped layer and ohmic contact metal layer；
The GaN base layer and AlGaN layer constitute Well structure, and the AlGaN layer is by the method epitaxial growth of MOCVD described
On GaN base layer, the AlGaN layer stack architecture of different-thickness is realized by etching；
The doped layer is the one layer of high-dopant concentration n grown in AlGaN layer+GaN layer,
The n+-GaN doped layer surface deposition has ohmic contact metal layer,
Being uniformly distributed for electric field between electrodes may be implemented in the stack architecture, and different AlGaN layer thickness periodic structures can mention
High carrier mobility.
A method of the laser triggering high-power half insulation AlGaN/GaN switch of stack architecture is made, including is walked as follows
It is rapid:
Step 1: pass through the method epitaxial growth AlGaN layer of MOCVD on GaN base layer, form Well structure between GaN layer；
Step 2: the n of one layer of high-dopant concentration is grown in AlGaN layer+GaN layer；
Step 3: by the method for dry etching by the highly doped n outside AlGaN layer electrode zone+GaN layer removal；
Step 4: Ti, Al, Ni, Au metal are successively deposited to the n of electrode zone by way of electron beam evaporation+-GaN layer
Surface；
Step 5: being become smaller AlGaN layer partial region thickness using dry etching, forms stack architecture；
Step 6: Ohmic contact is formed by way of rapid thermal annealing；
In the above-mentioned technical solutions, the AlGaN layer with a thickness of 22nm, specific molecular structure is Al0.21Ga0.79N, it is non-electrode
The partial region Al in region0.21Ga0.79N is with a thickness of 5nm.
In the above-mentioned technical solutions, the highly doped n+The concentration of GaN layer doping is greater than 1019 cm-3。
In the above-mentioned technical solutions, by highly doped n+The Ohmic contact of GaN layer and metal layer composition, ohmic contact resistance
Rate is less than 10-6Ω·cm2
In the above-mentioned technical solutions, the Ohm contact electrode gap in the electrode zone of positive electrode be 5mm, Ohmic electrode having a size of
10 mm×5 mm。
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
Stack architecture laser triggering high-power half insulation AlGaN/GaN switch of the invention, by semi-insulation SiC/GaN of 1 mm thickness
Substrate material and Al0.21Ga0.79N layers of 22nm thickness composition, Ohm contact electrode gap are 5 mm, and wavelength 355 is used when test
Nm, energy 10mJ, the laser pulse triggering high-power half insulation AlGaN/GaN switch for triggering 15 ns of laser pulse width, in pulse electricity
When pressing 42kV, the conducting resistance that stack architecture laser triggering high-power half insulation AlGaN/GaN switch is obtained by calculation is 22
Ω.It can be expanded to apply in solid pulse power field.
Detailed description of the invention
Examples of the present invention will be described by way of reference to the accompanying drawings, in which:
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 stack architecture laser triggering high-power half insulation AlGaN/GaN switch structure diagram；
Fig. 2 laser triggering high-power half insulation AlGaN/GaN switch test circuit figure；
Fig. 3 non-stack structure laser triggering high-power half insulation AlGaN/GaN switcher input voltage and loop current waveform；
Fig. 4 stack architecture laser triggering high-power half insulation AlGaN/GaN switcher input voltage and loop current waveform；
Wherein: 1 is GaN layer, and 2 be AlGaN layer, and 3 be highly doped n+GaN layer, 4 be ohmic contact metal layer, and 5 be different-thickness
Gap (μm magnitude) between AlGaN layer, 6 be c-GaN layers, and 7 be AlN layers, and 8 be SiC layer.
Specific embodiment
All features disclosed in this specification or disclosed all methods or in the process the step of, in addition to mutually exclusive
Feature and/or step other than, can combine in any way.
Any feature disclosed in this specification (including any accessory claim, abstract and attached drawing), except non-specifically chatting
It states, can be replaced by other alternative features that are equivalent or have similar purpose.That is, unless specifically stated, each feature is only
It is an example in a series of equivalent or similar characteristics.
As shown in Figure 1, it includes: GaN base layer, AlGaN layer, doped layer and metal layer that the final structure of the present embodiment, which is,；Institute
It states GaN base layer and AlGaN layer constitutes Well structure, the electrode district on the electrode surface of the GaN base layer is arranged in the AlGaN layer
On domain, the doped layer is n+-GaN layers highly doped to be provided with one layer in AlGaN layer, and doped layer surface deposition has metal layer,
One layer of anti-reflection film is set between the electrode of AlGaN layer electrode surface, and one layer of high-reflecting film, AlGaN layer is arranged in the non-electrical pole-face of GaN base layer
Including non-electrode region and electrode zone, the partial region thickness in non-electrode region is less than the thickness of electrode zone.
Its manufacturing process are as follows: the method epitaxial growth first on SiC/GaN substrate material through MOCVD is with a thickness of 22nm
Al0.21Ga0.79N layers, Well structure is formed between GaN layer；Secondly in Al0.21Ga0.79One layer of n is grown on N layer+GaN layer is mixed
Miscellaneous concentration is greater than 1019 cm-3, then highly doped n+-GaN layers outside electrode zone are removed by the method for dry etching；It connects
Get off and Ti/Al/Ni/Au metal is successively deposited to n by way of electron beam evaporation+GaN layer surface, electrode gap 5
Mm, Ohmic electrode is having a size of the mm of 10 mm × 5；Specific region 22nm thickness AlGaN layer is thinned to by 5nm using dry etching again；
Ohmic contact is formed finally by the mode of rapid thermal annealing, tests to obtain ohmic contact resistance rate less than 10 by TLM method-6
Ω·cm2.Finally make high-reflecting film in GaN substrate wheat flour, makes anti-reflection film between the electrode of the face AlGaN.
Fig. 2 is laser triggering high-power half insulation AlGaN/GaN switch test circuit figure.Tank capacitors capacitance is
1nF, load resistance are 50 Ω.Using the conducting electric current of Pearson coil measurement switch, coil sensitivity is 0.1 V/A；Switch
On-load voltage is measured by Tek P6015A high-voltage probe.
Fig. 3 is non-stack architecture laser triggering high-power half insulation AlGaN/GaN switcher input voltage and loop current wave
The switch on-load voltage and loop current waveform diagram that shape is measured in 42 kV of input voltage；Fig. 4 is that stack architecture laser triggering is big
The switch load that the semi-insulating AlGaN/GaN switcher input voltage of power and loop current waveform are measured in 42 kV of input voltage
Voltage and loop current waveform diagram.It can be seen that stack architecture laser triggering high-power half insulation AlGaN/GaN from two figures
For switch under identical on-load voltage, output loop electric current is larger.It can be by Ron=Umin/IPCSSIt is simply calculated leading for switch
Be powered resistance Ron, wherein UminMinimum voltage value when for switch conduction, IPCSSFor the maximum current passed through on switch.It can be calculated:
Non-stack structure laser triggering high-power half insulation AlGaN/GaN switch conduction resistance is about 41 Ω；And stack architecture laser touches
Sending out high-power half insulation AlGaN/GaN switch conduction resistance is 22 Ω, reduces nearly 1 times.
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.
Claims (5)
1. a kind of laser triggering high-power half insulation AlGaN/GaN switch of stack architecture, characterized by comprising: SiC lining
Bottom, GaN base layer, AlGaN layer in uneven thickness, high concentration GaN doped layer and ohmic contact metal layer；
The GaN base layer and AlGaN layer constitute Well structure, and the AlGaN layer is by the method epitaxial growth of MOCVD described
On GaN base layer, the AlGaN layer stack architecture of different-thickness is realized by etching；
The doped layer is the one layer of high-dopant concentration n grown in AlGaN layer+GaN layer,
The n+-GaN doped layer surface deposition has ohmic contact metal layer,
Being uniformly distributed for electric field between electrodes may be implemented in the stack architecture, and different AlGaN layer thickness periodic structures can mention
High carrier mobility.
2. a kind of laser triggering high-power half insulation AlGaN/GaN for making a kind of stack architecture as described in claim 1 is opened
The method of pass, it is characterised in that include the following steps:
Step 1: pass through the method epitaxial growth AlGaN layer of MOCVD on GaN base layer, form Well structure between GaN layer；
Step 2: the n of one layer of high-dopant concentration is grown in AlGaN layer+GaN layer；
Step 3: by the method for dry etching by the highly doped n outside AlGaN layer electrode zone+GaN layer removal；
Step 4: Ti, Al, Ni, Au metal are successively deposited to the n of electrode zone by way of electron beam evaporation+-GaN layer table
Face；
Step 5: being become smaller the partial region thickness of AlGaN layer using dry etching, forms stack architecture；
Step 6: Ohmic contact is formed by way of rapid thermal annealing；
Production method according to claim 2, it is characterised in that the AlGaN layer with a thickness of 22nm, specific molecular structure is
Al0.21Ga0.79N, the partial region Al in non-electrode region0.21Ga0.79N is with a thickness of 5nm.
3. production method according to claim 2, it is characterised in that the highly doped n+The concentration of GaN layer doping is greater than 1019
cm-3。
4. production method according to claim 2, it is characterised in that by highly doped n+Ohm of GaN layer and metal layer composition connects
Touching, ohmic contact resistance rate is less than 10-6 Ω·cm2。
5. production method according to claim 5, it is characterised in that the Ohm contact electrode in the electrode zone of positive electrode
Gap is 5mm, and Ohmic electrode is having a size of the mm of 10 mm × 5.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113823700A (en) * | 2021-09-16 | 2021-12-21 | 西安交通大学 | Gallium nitride photoconductive semiconductor switch and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113823700B (en) * | 2021-09-16 | 2024-03-29 | 西安交通大学 | Gallium nitride photoconductive semiconductor switch and preparation method thereof |
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