CN106132886B

CN106132886B - Edge chamfer method

Info

Publication number: CN106132886B
Application number: CN201580016443.2A
Authority: CN
Inventors: S·马加诺维克; D·A·帕斯泰尔; G·A·皮尔驰; J·M·奎恩塔尔; S·楚达; R·S·瓦格纳; A·N·耶尔瑞
Original assignee: Corning Inc
Current assignee: Corning Inc
Priority date: 2014-01-27
Filing date: 2015-01-27
Publication date: 2019-05-10
Anticipated expiration: 2035-01-27
Also published as: WO2015113024A1; CN106132886A; TW201540405A

Abstract

It there is described herein the process for carrying out chamfering and/or beveling to the edge of the glass substrate of arbitrary shape using laser.Two kinds of conventional methods for generating chamfering on the glass substrate are: first method, relate to the use of the ultrashort pulse laser cutting edge for generating perforation in the glass and make it have desired chamfer shape；It is ion exchange later.

Description

Edge chamfer method

Related application

The application requires the U.S.Provisional Serial 61/ submitted on January 27th, 2014 according to 35 U.S.C. § 119 931881 benefit of priority, the content of the application are used as according to and are incorporated herein by reference in their entirety.

The application also requires the equity and 2014 for the U.S. Provisional Application No. 62/022,885 submitted on July 10th, 2014 The equity for the U.S. Application No. 14/530410 that on October 31, in submits, whole disclosure contents of the application are incorporated by reference Herein.

Background technique

The present disclosure generally relates to glass chamfering methods, and more particularly relate to exchanged using laser coupled ion The glass chamfering method of journey.

Do not recognize cited herein any with reference to the composition prior art.Applicant, which clearly retains, queries any citation Accuracy and correlation right.

Institute for the application in architecture, automobile, consumption electronic product (and lift several) is cut in inserts of glass Under there is something special, edge will be present, these edges, which will be very likely to, to be needed to pay attention to.In the presence of for cutting with many of separation of glasses not Same method.For example, glass can mechanically be cut (CNC machining, abrasive water-jet, scribing and fracture etc.), be used Electromagnetic radiation (laser, electric discharge, vibratory gyroscope etc.).(scribing and fracture or CNC machine add more traditional and common method Work) generate the edge with different type and size defect.It was found that these edges are illy also very common perpendicular to surface.For Eliminating these defects and giving these edges has the more evenly surface for improving intensity, they are generally ground.Process of lapping It is related to the abrasive material removal of skirt materials, the abrasive material removal can give the desired finishing of the skirt materials and also make The forming of its form (fillet, chamfering, pencil shape etc.).In order to allow grinding and polishing step, it is necessary to which cutting is greater than most The part of size desired by end.

Although well-known and understanding is to eliminate defect to increase edge strength, in shape to the influence side of edge strength Reach an agreement not yet in face.Obscure and be primarily due to, it is known that shape helps to increase collsion damage drag and edge Processing.The fact is that the really uncertain edge strength such as limited by bending resistance (or bending) power of edge shape, but defect size There is strong influence with distribution.However, profiled edge passes through the smaller section of generation and includes that defect is collided to help improve Drag.For example, there is the edge in the straight face of two main surfaces perpendicular to glass cumulative stress at these right angle corners, and And when edge is collided by another object by fragmentation and fracture.By the stress accumulated, the size of defect can be quite big, This will weaken the intensity at the edge significantly.On the other hand, " fillet " of the shape smoother due to edge, cavetto shapes side Edge will have less cumulative stress and smaller section, this helps to reduce the size and wear that defect enters in the volume at edge Thoroughly.Therefore, after an impact, profiled edge should have " bending " intensity more higher than flat edge.

Due to described above, it is often desirable to edge be made to be different from flat forming and perpendicular to surface.These are mechanical One importance of cutting and edge shaping method is the maintenance degree of machine.For cutting and grinding the two, old and abrasion Cutter head or mixing roll can produce the damage that can significantly affect edge strength, even if naked eye can not see difference.Machine Tool cutting and grinding method other problems be they be it is labor-intensive and need it is many grinding and polishing step until Final desired completion, this generates many fragments and needs cleanup step to avoid the damage introduced to surface.

It has been used to generate profiled edge by the ablation that laser treatment carries out.

Generally, due to low material removing rate, ablative laser technical tendency is in slow, and they also generate and cause to remain The many fragments and heat affected area of residue stress and micro-crack.Due to same cause, the fusing at edge and reshape also by can make Many deformations of the treated areas removing and the puzzlement for accumulating thermal stress.Finally, for hot soarfing from or crack propagation technology For, the main problem that is encountered first is that removing is discontinuous.

Damage or small micro-crack and material modification under the surface as caused by any cutting process be for glass or other The problem of edge strength of fragile material.Mechanical and ablative laser process is especially problematic for the damage under surface.Utilize this The edge cutting of a little processes grinds after typically needing many cuttings and polishes the damaging layer under surface to remove, thus by side Edge intensity increase in such as consumption electronic product using required performance class.

It summarizes

Embodiment described here is related to exchanging bath to the side of the glass substrate of arbitrary shape using laser coupled ion Edge carries out the process of chamfering and/or beveling.

One embodiment of present disclosure is related to a kind of method for generating chamfering or inclined-plane, which comprises

It is observed along beam propagation direction, pulse laser beam is focused into laser beam focal line；

The laser beam focal line is directed in the material with the first incidence angle relative to the material, the laser Beam focal line generates induction in the material and absorbs, and the induction absorption generates in the material along the laser beam focal line Defect line；

Translate relative to each other the material and the laser beam, thus along the first plane for being in described first jiao Laser drills out a plurality of defect line in the material；

The laser beam focal line is directed in the material with the second incidence angle relative to the material, the laser Beam focal line generates induction in the material and absorbs, and the induction absorption generates in the material along the laser beam focal line Defect line；

Translate relative to each other the material and the laser beam, thus along the second plane for being in described second jiao Laser drills out a plurality of defect line in the material, and second plane intersects with first plane, and

By to the material application ion exchange process 10 minutes to 120 minutes come along first plane and described Material described in second planar separation.

According to some embodiments, separated material is the glass at least one chamfering surface, Chamfer Edge or inclined-plane Glass piece.

According to some embodiments, at least one of first incidence angle and second incidence angle are without respect to institute State the normal angle (not being 90 ° of angles) of the main surface of material.For example, if the material be tool there are two main flat surface (and The thickness of width and length much smaller than described) sheet glass, described first jiao and/or second jiao relative to the sheet glass The normal of the main flat surface be greater than 0 ° and less than 90 °.

According to some embodiments, in separation process of the material along first plane and second plane, And the ion exchange process is applied to the material duration t, wherein 15 minutes≤t≤120 minute.In some realities It applies in example, 15 minutes≤t≤60 minute, and in some embodiments, 15 minutes≤t≤50 minute, or even 15 minutes≤t ≤ 40 minutes.According to some embodiments, the ion exchange process 400 to 500 DEG C at a temperature of be applied to the material.

According to some embodiments, the method further includes making the material undergo the second ion exchange process, so as to Strengthen the material and improves material to the drag of subsequent insult.

One embodiment of present disclosure is related to a kind of method for generating chamfering or inclined-plane workpiece, which comprises

The laser beam focal line is directed in the workpiece with the incidence angle relative to the workpiece, the angle with it is described The edge of workpiece intersects, and the laser beam focal line generates induction in the workpiece and absorbs, and the induction is absorbed to swash along described Light beam focal line generates defect line in the workpiece；

Translate relative to each other the workpiece and the laser beam, thus along the plane in the angle in the work Laser drills out a plurality of defect line in part；

By to the workpiece application ion exchange process come along workpiece described in the planar separation.

According to some embodiments, a method of manufacture chamfering and reinforcing glassware, comprising:

(i) glassware is provided, the glassware have selection profile and glass surface and perforated edge and/or Turning；

(ii) by keeping the product experience the first ion exchange process (for example, continuing 20 to 60 minutes) described to remove A part adjacent to the perforated edge and/or turning of glass, to complete the integral cutting between perforation；

(iii) glassware is rinsed,

(iv) glassware of the rinsing is air-dried；And then

(v) glassware is made to undergo the second ion exchange process to strengthen described in the glassware and improvement Drag of the glassware to subsequent insult.

According to some embodiments, first ion exchange process is DIOX process (two-stage IOX exchange process).According to one A little embodiments, second ion exchange process are DIOX processes.According to some embodiments, first ion exchange process and Second ion exchange process is DIOX process.

Supplementary features and advantage will be described in detail below in be clear from and part from the description to ability It will become apparent for the those of ordinary skill of domain or by embodiment and its right described in practice as written description Claim and appended attached drawing are easily identified.

It should be appreciated that above-mentioned be broadly described is merely exemplary with described in detail below, and it is intended that understand that right is wanted The essence and feature for seeking book provide summary or frame.

Attached drawing is included to just provide and further understand, and is incorporated in the present specification and constitutes one of this specification Point.Attached drawing illustrates one or more embodiments, and from detailed description together for explaining principle and the behaviour of different embodiments Make.

Detailed description of the invention

This patent or application documents include the attached drawing that an at least width colour is drawn.This patent or patent with color drawings Apply for that disclosed copy will be provided after requesting and paying necessary expense by local exchange.

Above content is by from the described more particularly below obvious of the exemplary embodiment of present disclosure, as depicted in the figures, Wherein refer to same section through the similar reference character of different views.Attached drawing is not necessarily drawn to, but is focused on and shown present disclosure Embodiment.

Figure 1A -1C is the diagram with the fault line of defect line at equal intervals of modified glass.

Fig. 2A and 2B is the diagram of the positioning of laser beam focal line, that is, for swashing caused by being absorbed by the induction along focal line The processing of the transparent material of optical wavelength.

Fig. 3 A is the diagram for the optical module of corresponding laser drill.

Fig. 3 B1-3B4 is by the way that relative to substrate, differently position laser beam focal line handles the different possibilities of substrate Diagram.

Fig. 4 is the diagram of the second optical module for laser drill.

Fig. 5 A and 5B are the diagrams of the third optical module for laser drill.

Fig. 6 is the schematic diagram of the 4th optical module for laser drill.

Fig. 7 A is the distinct methods for being used to form more steady edge-generation chamfering and sacrificing edge described in this application Flow chart.

Fig. 7 B shows the process for generating the Chamfer Edge with defect line.

Fig. 7 C show using along predetermined plane generate defect line focusing and angled ultrashort laser into The laser chamfering of capable glass edge.Top, which is shown, has used 3 defect line planes using only two compared to bottom image Example.

Fig. 8 A and 8B depict the Laser emission of the time change with picosecond laser.Each transmitting is characterized in that can wrap Pulse " bursts " containing one or more subpulses.Show correspond to interval between pulse duration, pulse and Interval time between bursts.

Fig. 9 is shown using the defect line kept after cut portion is released for use as sacrifice region, thus stop The propagation of the crackle as caused by the collision at the edge to the part.

Figure 10 A is that there is the cut portion of internal flaw line to be placed to the diagram in ion exchange, and which increase enough Stress perforated edge and form desired edge chamfer to remove.

Figure 10 B is ion exchange (IOX) for discharging the use at chamfering turning, is illustrated similar to shown in Figure 10 A, But only there are two defect line planes for tool.

Figure 10 C is that have many angles (more than the diagram of the chamfering of 3 defect line planes.

Figure 11 is shown to be used to remove glass along fault line (defect line) to generate several realities of chamfering using IOX process Apply the result of example.

Figure 12 A shows the chamfering generated by edge chamfer process, and the process is come in glass by using laser It generates defect line (perforation) and the apertured glass is then made to undergo long IOX bath in 15 minutes, for removing and separating, therefore Generate Chamfer Edge.

Figure 12 B shows the chamfering generated by edge chamfer process, and the process is come in glass by using laser It generates defect line (perforation) and the apertured glass is then made to undergo long IOX bath in 60 minutes, for removing and separating, therefore Generate Chamfer Edge.Figure 12 C shows the chamfering generated by edge chamfer process, and the process is come by using laser in glass Defect line (perforation) is generated in glass and the apertured glass is then made to undergo long IOX bath in 30 minutes, for removing and separating, Therefore Chamfer Edge is generated.

Specific embodiment

Exemplary embodiment is described as follows.

Embodiment described here is related to the side using laser to the glass substrate of arbitrary shape and other transparent materials Edge carries out the process of chamfering and/or beveling.First embodiment relates to the use of ultrashort pulse laser cut edge, makes it have institute Desired chamfer shape, the cutting can be optionally followed by other process steps for being fully automatically separated.In first party In method, process basis step is that fault line is generated on intersecting plane, these fault lines describe desired edge shape and The path to the least resistance of crack propagation is established, and therefore the shape is separated and is detached from from its substrate matrix.This side Method substantially generates profiled edge while the part is cut into main substrate.Separation by laser method can be adjusted and match Being set to allows profiled edge manual separation, is partially separated or isolates certainly original substrate.Generate the substantially former of these fault lines Reason is following and be described in detail in the U.S. Application No. 61/752,489 that on January 15th, 2013 submits.

In the first step, object to be processed, the ultra-short pulse laser Shu Ning are radiated using ultra-short pulse laser beam Gather to be focused across the high aspect ratio threadiness of the thickness of substrate.In the volume of this high-energy density, material is via non-linear Effect is to modify.It is important to note that in the case where not having this high light intensity, does not trigger non-linear absorption.In this intensity Threshold value is hereinafter, material is transparent to laser emission and keeps its original state, as shown in figs. 1A-1 c.By desired Line or path on scanning laser, generate narrow defect line (several microns wide) and limit it is to be separated in the next step Periphery or shape.Used specific laser means (being described below) have the advantage that in single access, generate across The solid line of the high degree of controlled of material is perforated, with minimum (< 75 μm, often < 50 μm, and in some embodiments≤40 μm) Damage and fragment under surface generate.This focuses the typically used as on the contrary, plurality of of laser with the hot spot for ablator Access must often be formed completely through thickness of glass, a large amount of fragments from ablation process, and the damage widely under surface Hurt (> 100 μm) and edges broken occurs.

Fig. 2A and 2B is turned to, includes that pulse laser beam 2 is focused to laser beam coke to the method that material carries out laser drill Line 2b is observed along beam propagation direction.As shown in fig. 3,3 (not shown) of laser is referred to as 2a's in optical module 6 Emit laser beam 2 at beam incident side, the laser beam is incident on optical module 6.Optical module 6 is (burnt along beam direction Incoming laser beam is changed into the laser beam focal line 2b of extension by the length l) of line in limited scope on the output side.? After the laser beam focal line 2b of the least partially overlapped laser beam 2 of optical module, planar substrates 1 to be processed are positioned in beam road In diameter.The surface in face of optical module 6 or laser of reference label 1a given plane substrate, accordingly, reference label 1b refers to Determine the opposed surface of the usual parallel interval of substrate 1.Substrate thickness (measures, that is, flat perpendicular to substrate perpendicular to plane 1a and 1b Face) it is marked as d.

If Fig. 2A describe, substrate 1 be transversely to the machine direction beam axis be aligned and therefore in generated by optical module 6 it is identical After focal line 2b (substrate is perpendicular to plan) and along its relative to focal line 2b positioning beam direction observed, the base Plate positions in this way so that the focal line 2b observed in beam direction starts before 1a on the surface of the substrate and in substrate Surface 1b before stop, that is, still in substrate.In the overlapping region of laser beam focal line 2b and substrate 1, that is, by coke In the baseplate material of line 2b covering, therefore epitaxial laser beam focal line 2b is generated and (is being focused on one section of length l due to laser beam 2 On, that is, linear focus of length l and in the case where ensuring the suitable laser intensity along laser beam focal line 2b) along longitudinal direction The extension section 2c of beam direction observation, induction is absorbed to be generated in baseplate material along the direction, and the induction absorbs It is formed in baseplate material along section 2c triggering hole line or crackle.Defect line formation be not only it is local, but induction inhale In the whole length of the extension section 2c of receipts.(that is, final, laser beam focal line 2b is overlapping with substrate 1 long for the length of section 2c Degree) it is marked as reference label L.The average diameter or average extension for inducing the section absorbed (or are undergone in the material of substrate 1 The section that defect line is formed) it is marked as reference label D.This average extension D corresponds essentially to laser beam focal line 2b's Average diameter δ, it is, average spot diameter is between about 0.1 μm with about 5 μm.

As shown in Figure 2 A, the baseplate material transparent for the wavelength X of laser beam 2 is due to absorbing quilt along the induction of focal line 2b Heating.Fig. 2 B, which will summarize heating material, finally to be expanded, so that the tension accordingly induced causes micro-crack to be formed, the tension The highest at the 1a of surface.

The specific optical module 6 that can be applied to generate focal line 2b is described below and these optical modules can be at it The middle specific optical setup applied.All components or setting are based on above description, so that same reference numerals are used for phase It is those of equal with component or feature or in their function.Therefore, difference is only described below.

Division surface due to eventually leading to separation is or must be high quality (about breaking strength, geometric accuracy, coarse Spend and machine avoiding for demand again), need preferably be made along the independent focal line that separator bar 5 positions on the surface of the substrate (hereafter, optical module is alternatively also known as laser optic) is generated with optical module described below.Roughness tool Caused by the spot size or spot diameter of focal line to body.In order to (mutual with the material of substrate 1 in the laser 3 of setted wavelength λ Effect) in the case where realize that such as 0.5 μm to 2 μm of small light spot size, certain demands are usually forced over laser optic 6 Numerical aperture on.These demands are met by laser optic 6 described below.

In order to realize required numerical aperture, optical device preferably should be on the one hand according to known Abbe's formula (N.A.=n sin (theta), n: the refractive index of glass to be processed, theta: the half of angular aperture；And theta=arctan (D/2f)；D: aperture, f: focal length) it handles for the required opening for giving focal length.On the other hand, laser beam should preferably irradiate Optical device until reach required aperture, this typically via between laser and focusing optics using widening telescope Beam widen to realize.

For the purpose uniformly to interact along focal line, spot size should not change too big.This can for example pass through Focusing optics is only irradiated in small border circular areas is ensured (see following embodiment), so that beam opening with And therefore the percentage of numerical aperture only slightly changes.

According to (area of the horizontal place of the central beam in the laser beam bundle of laser emission 2 perpendicular to base plan Fig. 3 A Section；Herein, the center of laser beam 2 is substantially perpendicular to base plan incidence, that is, with about 0 ° of angle, so that focal line 2b Or the extension section 2c that induction absorbs is parallel to substrate normal), the laser emission 2a emitted by laser 3 is first directed into circle On shape aperture 8, the circular orifice is fully opaque for used laser emission.Aperture 8 is transversely to the machine direction beam Axis orients and centered on the central beam of discribed beam group 2a.The diameter in aperture 8 is selected, mode be so that The beam group of the center of beam group 2a or central beam (being here labeled as 2aZ) nearby reaches aperture and is absorbed completely. Only the beam in the peripheral range of beam group 2a (rim ray is here labeled as 2aR) compared to beam diameter due to reducing Aperture size without being absorbed, but 8 transverse direction of access aperture and reach optical module 6 focusing optic marginal zone Domain, the optical module here designed are the biconvex lens 7 of spherical cutting.

Lens 7 centered on central beam are deliberately designed as the non-correction biconvex in common spherical surface cutting form of lens Face condenser lens.In other words, the spherical aberration of this lens is deliberately used.As an alternative, the ideal school of deviation also can be used The aspherical or poly-lens system of positive system, these aspherical or poly-lens systems do not form ideal focus but are formed and limit length The long and narrow focal line of difference (that is, lens or system for not having single focus) of degree.Therefore the area of lens is focused along focal line 2b, by It is limited to the distance away from lens centre.The diameter across beam direction in aperture 8 is the diameter of beam group (by being reduced to prolonging for 1/e Extending portion limit beam group diameter) about 90% and be optical module 6 lens diameter about 75%.Therefore it uses Focal line 2b by blocking the non-aberration correction spherical lens 7 generated in the beam group in center.Fig. 3 A is shown in passing through Section in one plane of heart beam, when discribed beam is rotated around focal line 2b, it can be seen that three-dimensional group completely.

One of this focal line the disadvantage is that along focal line, and therefore along the situation (light of the desired depth in material Spot size, laser intensity) change, and therefore desired types of interaction (non-melt, induction absorption, pyroplastic deformation Until crackle is formed) it may only be selected in a part of focal line.This in turn mean may only incident laser one Part is absorbed in a desired manner.By this method, efficiency (the required average laser of desired separating rate of the process Power) it is weakened on the one hand, and laser can be launched into desired deeper position and (be attached to substrate on the other hand On part or layer or substrate holding jig) and (heating, absorbs, undesired modification diffusion) exists in an undesired manner There interacts.

Fig. 3 B-1-4, which is shown, (can fit not only for the optical module in Fig. 3 A, and substantially also directed to any other With optical module 6) laser beam focal line 2b can be by being properly located and/or align optical components 6 and logical relative to substrate 1 Cross and properly select the parameter of optical module 6 differently to position: if Fig. 3 B-1 is summarized, the length l of focal line 2b can be with this Mode is adjusted, and mode is that length is made to be more than substrate thickness d (being herein more than factor 2).If the placement of 1 middle ground of substrate (along The observation of longitudinal beam direction) on focal line 2b, induce the extension section 2c of absorption to generate on entire substrate thickness.

Shown in Fig. 3 B-2, the focal line 2b of length l is generated, the focal line more or less corresponds to substrate extension Portion d.Since substrate 1 is positioned relative to line 2, mode is so that line 2b is before substrate, that is, starts in the point in outside, lures Lead the extension section 2c of absorption length L (herein from substrate surface extend to defined by substrate depth, but do not extend to phase Anti- surface 1b) it is less than the length l of focal line 2b.Fig. 3 B-3 shows following situations, and wherein substrate 1 (observes) portion along beam direction It is located in front of the starting point of focal line 2b with dividing, so that substrate is applied on the length l of line 2b herein, l > L (L=substrate 1 In induction absorb section 2c extension).Therefore focal line starts in substrate and extends on opposed surface 1b with super Cross substrate.Fig. 3 B-4 finally shows following situations, wherein the focal line length l generated is less than substrate thickness d, so that-base In the case where centrally-located of the plate relative to the focal line observed in incident direction-focal line is inscribed near surface 1a in substrate and starts And near surface 1b, which is inscribed, in substrate terminates (l=0.75d).

It is especially advantageous to be to recognize that focal line is positioned, mode be so that at least one surface 1a, 1b are covered by focal line, That is, the section 2c that induction absorbs at least is starting at a surface.In this manner it is possible to realize actually ideal drilling or Cutting, to avoid the ablation at surface, feathering and granulation.

Fig. 4 depicts another optical module 6 applicatory.Base configuration is imitated described in Fig. 3 A, so that with Under difference is only described.Use of the discribed optical module based on the optical device with non-spherical free surface, to generate Focal line 2b, the optical module are shaped, and mode is so that forming the focal line with limit length l.For this purpose, aspherical Lens may be used as the optical element of optical module 6.In Fig. 4, for example, also often being claimed using so-called conical prism For axial cone mirror.Axial cone mirror is that the special cone of formation hot spot source (or laser beam is changed into ring) on the line along optical axis is cut Cut lens.The layout of this axial cone mirror is generally known for those skilled in the art；Coning angle is 10 ° in this example.Herein It is guided towards incident direction and centered on beam centre labeled as the vertex of the axial cone mirror of reference label 9.Due to axial cone The focal line 2b of mirror 9 starts inside it, and substrate 1 (being aligned herein perpendicular to main beam axis) can be after axial cone mirror 9 directly It is located in course of the beam.As shown in figure 4, due to the optical characteristics of axial cone mirror, it is also possible in the range without departing from focal line 2b In the case of shift substrate 1 along beam direction.The extension section 2c that induction in the material of substrate 1 absorbs is therefore in entire base Extend on plate depth d.

However, discribed layout is limited to following constraint: since the focal line of axial cone mirror 9 has started in lens, In the case where limited distance between lens and material, signal portion out-focus being located in material to focal line 2b of laser energy Part 2c in.In addition, the length l of focal line 2b is related to the beam diameter of available refractive index and coning angle for axial cone mirror 9, This is that total focal line may be too long in the case where relatively thin material (several millimeters), to have laser energy inaccurate again The reason of ground (or not generally) focuses on the influence in material.

This is the reason of including the enhancing optical element 6 of axial cone mirror and condenser lens.Fig. 5 A depicts this optical module 6, wherein being designed to form the first optical element with aspherical Free Surface of epitaxial laser beam focal line 2b (along beam Direction observation) it is positioned in the course of the beam of laser 3.Shown in Fig. 5 A, this first optical element is tool There is the axial cone mirror 10 of 5 ° of coning angles, the axial cone mirror positions perpendicular to beam direction and centered on laser beam 3.Axial cone mirror Vertex is directed towards beam direction.Second focusing optic, for plano-convex lens 11, (its curvature is directed towards herein Axial cone mirror), to be positioned away from 10 distance z1 of axial cone mirror in beam direction.Distance z1 is selected, in that case about 300mm, Its mode is so that the laser emission formed by axial cone mirror 10 is circularly incident on the fringe region of lens 11.Lens 11 will be At distance z2, the circular radiation on outlet side in that case away from the about 20mm of lens 11 focuses on limit length (at this 1.5mm in a situation) focal line 2b on.The effective focal length of lens 11 is 25mm herein.Laser beam passes through the circle of axial cone mirror 10 Fractal transform is marked as reference label SR.

Focal line 2b or induction that Fig. 5 B is illustrated in detail in the material of substrate 1 according to Fig. 5 A absorb the formation of 2c.Element 10, Both 11 optical characteristics and their positioning are selected, and mode is so that extension l of the focal line 2b in beam direction It is accurately identical as the thickness d of substrate 1.Therefore, it is necessary to substrate 1 along the accurate positioning of beam direction so as to the two of substrate 1 Focal line 2b is precisely located between a surface 1a and 1b, as shown in Figure 5 B.

Therefore gathered when focal line is formed in away from laser optic specific range, and in the major part of laser emission Coke is advantageous when reaching the desired end of focal line.As described, this can be by only circularly irradiating in desired zone Main concentrating element 11 (lens) realizes that this aspect realizes required hot spot for realizing required numerical aperture and therefore Size, however, on the other hand, when forming substantially circular hot spot, scattering circle in the center of hot spot it is very short away from From remitted its fury after interior required focal line 2b.By this method, defect line is formed in the short distance in required substrate depth Nei and stops. The combination of axial cone mirror 10 and condenser lens 11 meets this demand.Axial cone mirror acts in two different ways: due to axial cone mirror 10, generally rounded laser spot is sent to condenser lens 11 in the form of a ring, and the asphericity of axial cone mirror 10 have with Lower influence: focal line is formed the focal plane more than lens rather than the focus in focal plane.The length l of focal line 2b can be via axial cone mirror On beam diameter adjustment.It on the other hand can be via distance z1 axial cone mirror lens and via institute along the numerical aperture of focal line The coning angle for stating axial cone mirror is adjusted.By this method, entire laser energy can concentrate in focal line.

If defect line forms the exiting side that should proceed to substrate, on the one hand circle irradiation still has the advantage that, Laser power is used in a manner of most preferably possibility, because the major part of laser still concentrates in the required length of focal line, another party Face may realize uniform spot size-along focal line and therefore be attributed to round shine along the uniform separation process-of focal line It penetrates region and combines the desired aberration set by other optical functions.

The plano-convex lens described in alternate figures 5A, it is also possible to using focusing the poly- of meniscus shaped lens or another higher correction Focus lens (aspherical poly-lens system).

For the focal line 2b for using the combination producing of the axial cone mirror and lens described in Fig. 5 A very short, preferably select It is incident on the very small beam diameter of the laser beam on axial cone mirror.This is with following real drawback: beam to the top of axial cone mirror On point between two parties should be very accurate and therefore the result is that very sensitive for the direction change of laser (beam drift is stablized Property).In addition, the laser beam of close parallel dissipates very much, that is, since light deflects, beam group thickens in short distance.

Rotate back into Fig. 6, two influences can be avoided by being inserted into another lens (collimation lens 12): this is other just Lens 12 are for closely adjusting the round irradiation of condenser lens 11.The focal length f' of collimation lens 12 is selected, mode To generate desired round diameter dr by from axial cone mirror to collimation lens 12 distance z1a, the distance is equal to f'.Ring Desired width br can be adjusted via distance z1b (collimation lens 12 arrive condenser lens 11).It is round due to pure geometry The small width of irradiation leads to short focus line.Minimum value can be realized at distance f'.

The optical module 6 described in Fig. 6 is therefore based on the optical module described in Fig. 5 A, so that it is poor only to describe below It is different.Collimation lens 12 is additionally designed to plano-convex lens (its curvature towards beam direction) herein and is additionally placed in side between two parties On axial cone mirror 10 (its vertex towards beam direction) and the other side on plano-convex lens 11 between course of the beam in.Collimation is saturating Mirror 12 is referred to as z1a away from the distance of axial cone mirror 10, and condenser lens 11 is referred to as z1b away from the distance of collimation lens 12, and gives birth to At focal line 2b be referred to as z2 (observing in beam direction always) away from the distance of condenser lens 11.As shown in fig. 1, by axial cone Divergently being incident on collimation lens 12 and being directed in round diameter dr circular radiation SR below for the formation of mirror 10 is focusing At least about constant round diameter dr at lens 11 round width br needed for being adjusted to along distance z1b.In shown feelings Under condition, very short focal line 2b should be generated, so that the round width br of the about 4mm at lens 12 is due to lens 12 Focus characteristics are reduced to about 0.5mm at lens 11 (round diameter dr is 22mm in this illustration).

In discribed example, the Typical laser beam diameter of 2mm may be used to realize the length less than 0.5mm of focal line l Degree, condenser lens 11 has focal length f=25mm, and collimation lens has focal length f '=150mm.In addition, using Z1a=Z1b =140mm and Z2=15mm.

Has defective line (being also known as fault line or perforation herein) once generating, separation can be sent out via following manner It is raw: process 1) on fault line or the manually or mechanically stress of surrounding；Stress or pressure, which should generate, pulls open the two sides of fault line And make to remain bound to the tension of regional fracture together；Or 2) stress produces at fault line or around fault line in glass Raw-during ion exchange process and inducing moiety or total from separating.In both cases, separation depends on several processes Parameter, such as laser scanning speed, laser power, the parameter of lens, pulsewidth, repetitive rate etc..

Second method will pass through using existing edge applies stress via ion exchange process (IOX) to generate down Angle.In at least some glass, two methods this combine it is available than by be used only method 1 see it is better right The control of Chamfer Edge shape and surface texture.

Ion exchange process (IOX) can contribute to glass at fault line or around fault line releasing from Chamfer Edge It puts, to generate Chamfer Edge or imperfect Chamfer Edge.Additionally, be described below picosecond laser process in non-Chamfer Edge or Imperfect Chamfer Edge, but having makes on the Chamfer Edge in " sacrifice " region of control damage as caused by peripheral collision With.Such IOX process, which is similar to, is used for glass reinforced IOX process.

Fig. 7 A provides the summary of process described in this application.

For using short pulse, burst laser to be formed in desired shape and the method at edge, developed Process depends on the material transparent to the optical maser wavelength of linear model or low laser intensity, the material allow it is clean and high (or It is original) maintenance of surface quality and by the damage under the surface for the reduction that the high intensity region that laser focuses generates.This The important parameter of a process first is that by ultrashort pulse laser generate defect high aspect ratio.It allows can be to be cut The generation of the length of bottom surface and the fault line or defect line (or perforation) of depth is extended to the top surface of the material of chamfering.Principle On, each defect can be generated by single pulse, and when necessary, and the pulse of additional pulse or single bursts can be used To increase the extension (depth and width) of involved area.

If in the presence of the drying method for generating the defect line.A variety of shapes can be taken by forming the linear optical means focused Formula forms high-intensitive linear zone using annular laser beams and spherical lens, axicon lens, diffraction element or other methods Domain.The type (picosecond, femtosecond etc.) and wavelength (IR, green, UV etc.) of laser can also be changed, as long as reaching sufficient Optical strength is to generate the fracture of baseplate material.

In the present embodiment, ultrashort burst laser is used to generate this in consistent, controllable and repeatable mode The vertical defect line of high aspect ratio (perforation or hole).Above description allows to generate the details of the optical setup of this vertical defect line. This embodiment uses ultrashort (picosecond or femtosecond duration) Bei Sai using the axicon lens element in optical lens module Slap on the face beam generates region of the high aspect ratio without tapered microchannel.In other words, axial cone mirror by laser beam condensation to cylindrical shape and In the region of high aspect ratio (longer length and shorter diameter).Due to the high intensity generated using light-concentrating laser beam, laser The nonlinear interaction generation of electromagnetic field and material and laser energy is transferred on substrate.It is important, however, that understanding To in the not high region of laser energy intensity (that is, glass surface, around the glass volume of centre convergence line), sent out without thing Life is on glass, because laser intensity is lower than non-linear threshold.

As that shown in figs. 1A to 1 c, the method for cutting simultaneously separation of glasses substrate is based essentially in ultrashort arteries and veins to be utilized It rushes and generates fault line on the material of laser process.The procedure parameter of specific choice will depend on material property, and (absorption, is answered CTE Power, composition etc.) and for the laser parameter for handling selection.

In some cases, generated fault line is not enough to automatically be isolated and may must carry out second step Suddenly.If desired, in the case where non-chemical strengthened glass, separation can be realized after generating defect line, passes through applying for mechanical force Add or forces these parts from separation by using ion exchange (IOX) process.Part or be always partially separated can by for Part in IOX bath selects the residence time appropriate to realize.

The glass substrate with flat edge is separated using same principle shown in Figure 1A -1C, for generating chamfering The process at edge can be modified as shown in fig.7b.For separation of glasses and Chamfer Edge is formed, for example, in one embodiment In, generate the separated plane for interacting and limiting three defect lines on the boundary of shape of chamfering or chamfered edge.No Same shape can be generated for example by using the defect line planes of only two interactions as seen in figure 7 c, but edge Flat part must fracture/separation in the case where not having any defect line.It should may utilize and lack at defect line plane It falls into the appropriately combined of line characteristic and separates turning using the processing of IOX bath.For example, defect line can be relative to glass substrate Flat surface normal with θ_iIt is formed, in some embodiments, 0 ° < θ of angle_i<90°.For example, the chamfering on the bottom of Fig. 7 B Edge is generated by 3 interaction planes, each includes a plurality of defect line.

Laser and optical system:

For example, for the purpose of glass-cutting or other transparent fragile materials, develop use (for example, 1064nm or 532nm or 266nm) picosecond laser combines the linear beam forming optics that focuses to generate lesion wire in a substrate (that is, defect Line) process.Sample with 0.7mm thicknessGlass code 2320 is positioned such that it is online In shape focuses.Using have~the linear of 1mm extension focused and generated with the repetitive rate of 200kHz (~150 μ J/ pulse) The picosecond laser of~> 30W output power, then the optical strength in linear region can be sufficiently high in the material easily Generate non-linear absorption.It generates the damage for substantially imitating high-intensitive linear region, ablation, vaporization or otherwise modifies Material area.

Notice that the typical operation of this picosecond laser generates pulse " bursts ".(for example, seeing Fig. 8 A and 8B).Each " bursts " may include multiple subpulses (that is, independent pulse) of very short duration (for example,~10 picoseconds).Often A subpulse separates in time, such as about 20 nanoseconds (50MHz), the time are often regulated and controled by laser cavity design.Each Time between " bursts " will be longer, is often~5 microseconds for the laser repetition rate of~200kHz.Accurate timing, pulse Duration and repetitive rate can be designed according to laser to be changed.But high-intensitive short pulse (< 15 picosecond) is shown To utilize this technology works fine.

It is separated from each other between about 1 nanosecond and about 50 nanoseconds for example, the teaching bursts of pulse may include Duration (for example, 10 nanoseconds to 50 nanoseconds (for example, about 20 nanoseconds or 30ns)) two pulses (herein also referred to as time Pulse) or more (3 pulses, 4 pulses in such as bursts, 5 pulses, 10 pulses, 15 pulses, 20 arteries and veins Punching or more pulse), and bursts repetition rate (that is, interval between the first pulse in two subsequent burst strings) can Between about 1kHz and about 200kHz.Pulse laser beam, which can have, is selected such that material at this wavelength Substantial transparent wavelength.In the background of present disclosure, it is less than every millimeter of depth of material about 50% at this wavelength when absorbing (for example, < 40%), even more preferably less than 10%, and even more preferably less than about 1% when, material is essentially for laser Wavelength is transparent.This wavelength can be such as 1064nm, 532nm, 355nm or 266 nanometers.The average laser measured at material Power can be greater than 40 every millimeter of material thickness of micro- joule, such as between 40 micro- micro- joules of joule/mm and 1000, such as 100- 900 μ J/mm, or between the micro- joule/mm in 100 and 650, wherein 200-400 μ J/mm is preferred.

For example, as shown in Figure 8A and 8B, according to embodiment described here, picosecond laser generates " bursts " 500 Pulse500A, also sometimes referred to as " burst ".Each " bursts " 500 may include up to 100 picoseconds (for example, 0.1 Picosecond, 5 picoseconds, 10 picoseconds, 15 picoseconds, 18ps, 20ps, 22ps, 25ps, 30ps, 50ps, 75ps or therebetween) Very short duration T_dMultiple pulses500A.These independent pulse 500A in single bursts 500 can also quilt Referred to as " subpulse ", this simply indicates that the fact in the pulse of single bursts occurs in they.It is every in the bursts The energy or intensity of a laser pulse 500A may be not equal to the energy or intensity of other pulses in the bursts, and happens suddenly The intensity distribution of multiple pulses in string 500 often imitates the exponential damping of the time by laser design regulation.Preferably, exist This description exemplary embodiment bursts 500 in each pulse 500A in time with the subsequent arteries and veins in the bursts Rush the duration T for separating 1 nanosecond to 50 nanoseconds (for example, 10-50ns or 10-30 nanosecond)_p, the time is often by laser cavity Design regulation.The time interval T between each pulse for giving laser, in bursts 500_p(pulse to pulse spacing) Relatively uniform (± 10%).For example, in some embodiments, each pulse separated for about 20 nanoseconds with succeeding impulse in time (50MHz).For example, for the pulse spacing T for generating for about 20 nanoseconds_pLaser, pulse in bursts to pulse spacing T_pQuilt Maintained for about ± 10% interior or about ± 2 nanoseconds.Each the time between " bursts " is (that is, the time interval between bursts T_b) by longer (for example, 0.25≤T_b≤ 1000 microseconds, such as 1-10 microsecond or 3-8 microsecond).For example, laser described herein Exemplary embodiment it is some in, laser repetition rate is about 5 microseconds or laser repetition rate is about 200kHz.Laser repeats Rate is also referred to as bursts repetition rate herein, and the first pulse being defined as in bursts into subsequent burst string the Time between one pulse.In other embodiments, bursts repetition rate is between about 1kHz and about 4MHz.More Preferably, laser repetition rate can be for example between about 10kHz and 650kHz.The first pulse in each bursts Time T between the first pulse in subsequent burst string_b0.25 microsecond (4MHz repetitive rate) be can be to 1000 microsecond (1kHz Repetitive rate), such as 0.5 microsecond (2MHz repetitive rate) is to 40 microseconds (25kHz repetitive rate) or 2 microseconds (500kHz repetitive rate) to 20 Microsecond (50kHz repetitive rate).Accurate timing, pulse duration and repetitive rate can be designed according to laser to be changed, but high Short pulse (the T of intensity_d< 20 picoseconds and preferably T_d≤ 15 picoseconds) it has been illustrated as particularly good working.

Energy needed for modifying material can (each bursts 500 include a series of arteries and veins according to bursts energy-bursts Rush 500A) in include energy to describe, or (many single laser pulses may be constructed a burst according to single laser pulse String) in include energy describe.For these applications, the energy of each bursts can be 25-750 μ J, more preferably 50- 500μJ,50-250μu.In some embodiments, the energy of each bursts is 100-250 μ J.It is independent in the bursts The energy of pulse will be less, and accurate individually pulsed laser energy will depend on the number of the pulse 500A in bursts 500 The attenuation rate (for example, exponential decay rate) of amount and laser pulse at any time, as shown in figs. 8 a and 8b.For example, for constant energy Amount/bursts, if burst includes 10 independent laser pulse 500A, then each individually laser pulse 500A will include If only having 2 independent less energy of laser pulse than same burst pulse 500.

The use of the laser of such burst can be generated for cutting or modify transparent material, such as glass is that have Benefit.Compared with the use of the single pulse of the repetitive rate of spaced laser in time, in quickly a succession of subpulse (packet Including bursts 500) use of the burst sequence of interior spread laser energy allows access into and interacts with the high intensity of material Ratio and single pulse laser interact possible bigger markers.Although pulse can extend in time, when this expansion When exhibition is completed, the intensity in pulse must be reduced to about one in pulse width.Therefore, if 10 picosecond pulses extend To 10 nanosecond pulses, about three orders of magnitude of strength reduction.Optical strength can be reduced to non-linear absorption not by this reduction Significant point again, and luminescent material interaction is no longer sufficiently strong to allow to cut.In contrast, burst laser is utilized Device, the intensity (or pulse 500A in bursts 500) during each subpulse 500A can keep it is very high-for example in the time It is pico- that three 10 picosecond pulse 500A of about 10 nanoseconds of upper interval still allow for the intensity in each pulse to be higher than single 10 About three times of pulse per second (PPS), at the same the laser be allowed to be higher than present three orders of magnitude when put on it is mutual with the material Effect.This adjusting of multiple pulse 500A in bursts therefore allow that laser-material interacts when target below The manipulation of mode: can promote more or less interactions with existing plasma plume, with via initial or previously swash It can promote in the atom that light pulse predrives or the interaction of more or fewer luminescent materials of separation and the material The more or less fuel factors of micro-crack increased by control.Aequum for modifying the burst of energy of the material will depend on It is formed in baseplate material and for the length of the linear focusing to interact with the substrate.Interaction zone is longer, extension The energy opened is more, and the burst of energy of needs is higher.

Hole or injury mark are formed:

If substrate or transparent material have sufficient stress (for example, utilizing glass after ion exchange), then the portion Dividing spontaneously will split and separate along the path for the puncture injury tracked by laser process.However, if substrate is not permitted inherently More stress are (for example, such as Corning EagleThe case where composition), then picosecond laser will be simple in the part Ground forms injury mark (that is, defect line or perforation).These injury marks, which are generally taken, to be had~and 0.5-1.5 μm or 0.2 micro- Rice to the hole of 2 microns of (for example, in some embodiments, 0.2 to 0.7 micron or 0.3 to 0.6 micron) inside dimensions form. Preferably, the pore size is very small (single micron or smaller).

The hole or defect line can perforate the whole thickness of the material, and can with or cannot be through the material Expect the continuous opening of depth.Fig. 1 C shows not strengthening for 700 μ m-thicks of perforationThe whole thickness of glass substrate part The example of such trace.The perforation or injury mark are observed across cleaved edge side.Trace across the material need not The region in the blocking hole of glass is frequently present of across hole-, but their sizes are usually smaller.

Lateral separation (spacing) between this some holes is determined by the pulse rate of laser, because substrate is focusing laser beam It translates below.Only need single Ps Laser Pulse bursts to form entire hole, although multiple pulses if desired can be used. In order to form hole with different spacing, laser can be activated for lighting a fire with longer or shorter interval.For cutting operation, Laser triggering is generally synchronous with the driving movement of the platform of the part under beam, therefore laser pulse is touched with fixed intervals Hair, such as every 1 μm or 5 μm every.In view of the stress level in substrate, precise intervals are by promoting the crackle from perforation to perforation to expand The material property of exhibition determines.However, compared with cutting substrate, it is also possible to using same procedure with the material of only perforating.At this In the case of kind, the hole is for example separated with 5 μm of spacing.

Laser power and the focal length of lens (it determines defect line length and therefore power density) are for ensuring the complete of glass Entirely penetrate with it is low-microcracked be the parameter being even more important.

In general, can be higher with laser power, cutting the material using above procedure can be proceeded more quickly.Herein The process of disclosure can be with 0.25 meter per second or faster cutting speed glass-cutting.Cutting speed (or cutting speed) is laser beam Surface relative to transparent material (for example, glass) is mobile while generating the rate of multiple holes or modifier area.High cutting speed, Such as 250 mm/seconds, 400 mm/seconds, 500 mm/seconds, 750 mm/seconds, 1 meter per second, 1.2 meter per seconds, 1.5 meter per seconds or 2 Meter per second or even 3.4 meter per seconds are often desired to minimize the capital investment for manufacture to 4 meter per seconds, and with Just optimization equipment utilization rate.Laser power is equal to the burst of energy to be doubled by the bursts repetition rate (rate) of laser.One As for, in order to cut such glass material with high cutting speed, injury mark is typically spaced apart 1-25 microns, in some realities It applies in example, preferably 3 microns or more-such as 3-12 microns or such as 5-10 microns big of the interval.

For example, the linear incision speed in order to realize 300 mm/seconds, 3 microns of pitchs of holes, which correspond to, has at least 100kHz The burst laser of bursts repetitive rate.For the cutting speed of 600 mm/seconds, 3 microns of spacing, which correspond to, to be had at least The burst laser of 200kHz bursts repetitive rate.Generate at least 40 μ J/ bursts and in 200kHz with 600mm/s The laser power that the burst laser of cutting speed cutting needs to have at least 8 watts.Therefore higher cutting speed needs Want even higher laser power.

For example, the 0.4 meter per second cutting speed in 3 μm of spacing and 40 μ J/ bursts will need at least 5 watt lasers, The 0.5 meter per second cutting speed in 3 μm of spacing and 40 μ J/ bursts will need at least 6 watt lasers.It is therefore preferred that The laser power of burst picosecond laser is 6 watts or higher, more preferably at least 8 watts or higher, and even more Preferably at least 10W or higher.For example, in order to realize in 4 μm of spacing (defect line pacing or between injury mark interval) and 0.4 meter per second cutting speed when 100 μ J/ bursts will need at least 10 watt lasers, and in order to realize in 4 μm of spacing At least 12 watt lasers will be needed with 0.5 meter per second cutting speed when 100 μ J/ bursts.For example, in order to realize between 3 μm Away from 1 meter per second cutting speed when 40 μ J/ bursts, will need at least 13 watt lasers.Also for example in 4 μm of spacing and 400 1 meter per second cutting speed when μ J/ bursts will need at least 100 watt lasers.Best spacing and essence between injury mark True burst of energy is that material is relevant, and can empirically determine.Swash However, it is noted that being promoted with closer spacing Optical pulse energy or to generate injury mark be not to separate baseplate material preferably or the item with improved edge quality Part.Between injury mark too intensive spacing (such as < 0.1 micron, in some exemplary embodiments < 1 μm, or some In embodiment < 2 μm) formation of neighbouring subsequent insult trace can be forbidden sometimes, and can often forbid around perforation profile Material separation, and may further result in and increase undesired micro-crack in glass.Too long of spacing (> 50 μm, and one In a little glass > 25 μm or even > 20 μm) " uncontrolled micro-crack "-can be led to that is, substitution is propagated from hole to hole, it is described Micro-crack causes the glass to split on different (undesirable) directions along different propagateds.This can be final The intensity of separated glass part is reduced, because remaining micro-crack will be as the crackle for weakening glass.For forming each damage The too high burst of energy (for example, > 2500 μ J/ bursts, and μ J/ bursts in some embodiments > 500) of trace can be with Cause " healing " or re-melting of the micro-crack of adjacent injury mark formed, this will forbid the separation of glass.Therefore, excellent Choosing is burst of energy < 2500 μ J/ bursts, for example,≤500 μ J/ bursts.Also, it can be with using too high burst of energy Cause the formation of great micro-crack and generates the crackle for reducing the edge strength of the part after isolation.Too low burst Energy (< 40 μ J/ bursts) can cause not forming considerable injury mark in glass, and therefore lead to very high separation Intensity completely cannot be along perforation profile separation.

It by the typical exemplary cut rate (speed) that this process is realized is such as 0.25 meter per second and higher.One In a little embodiments, rate of cutting is at least 300 mm/seconds.In some embodiments described herein, rate of cutting is at least 400 Mm/second, such as 500 mm/seconds to 2000 mm/seconds or higher.In some embodiments, picosecond (ps) laser utilizes arteries and veins Bursts are rushed to generate the defect line with the period between 0.5 micron and 13 microns, such as 0.5 micron and 3 microns.Some In embodiment, pulse laser has the laser power of 10W-100W and material and/or laser beam are relative to each other at least The rate of 0.25 meter per second translates, for example, with the rate of 0.25 to 0.35 meter per second or 0.4 meter per second to 5 meter per seconds.Preferably, arteries and veins Each burst of pulses of laser beam has what is measured at workpiece to be greater than 40 micro- every every millimeter of thickness of workpiece of bursts of joule Average laser energy.Preferably, each burst of pulses of pulse laser beam has what is measured at workpiece to be more than or less than The average laser energy of 2500 micro- every every millimeter of thickness of workpiece of bursts of joule, and preferably less than about 2000 micro- joules are often dashed forward Every millimeter of hair string, and in some embodiments less than 1500 micro- every every millimeter of thickness of workpiece of bursts of joule, for example, not more than 500 micro- every every millimeter of thickness of workpiece of bursts of joule.

It has been found that with such as CorningGlass phase ratio, higher (5 to 10 times high) volumetric pulse energy Metric density (μ j/ μm³) for perforation have less or alkaline-earth metal boroalumino silicate glasses without alkali-containing glass be desirable 's.This can for example pass through is realized using burst laser, it is therefore preferred to have the every bursts of at least two pulse and is provided Alkaline-earth metal boroalumino silicate glasses (with it is less or do not have alkali) in about 0.05 μ J/ μm³Or higher, for example, at least 0.1 μ J/μm³, such as 0.1-0.5 μ J/ μm³Volume energy density.

It is therefore preferable that laser generates the burst of pulses with the every bursts of at least two pulse.For example, one In a little embodiments, laser power of the pulse laser with 10W-150W (for example, 10W-100W) and generate at least two The burst of pulses of the every bursts of pulse (for example, the every bursts of 2-25 pulse).In some embodiments, pulse laser utensil There is the power of 25W-60W, and generates the burst of pulses with the every bursts of at least 2-25 pulse, and happened suddenly by laser Period or distance between the Adjacent defect line of string generation are 2-10 microns.In some embodiments, pulse laser has The laser power of 10W-100W generates the burst of pulses with the every bursts of at least two pulse, and workpiece and laser beam phase For being translated each other with the rate of at least 0.25 meter per second.In some embodiments, workpiece and/or laser beam relative to each other with The rate of at least 0.4 meter per second translates.

For example, for the Gorilla glass of the nonionic exchange Corning code 2319 or code 2320 that cut 0.7mm thickness, Observe that 3-7 microns of spacing can be about 150-250 μ J/ bursts with works fine, burst of pulses energy, and burst Several ranges is and the burst number (umber of pulses of every bursts) of preferably 3-5 microns of spacing and 2-5 from 2-15.

With 1 meter per second cutting speed, thick EagleThe cutting of glass typically needs 15-84 watts of laser power It utilizes, 30-45 watts usually enough.In general, throughout a variety of glass and other transparent materials, it is found by the applicant that 10 with Laser power between 100W is preferred, 25-60 watts of laser power from the cutting speed of 0.2-1 meter per second for realizing It is enough (and best) for many glass.For 0.4 meter per second to the cutting speed of 5 meter per seconds, laser power should be excellent Selection of land is 10W-150W, and burst of energy, the every pulse of 2-25 bursts with -750 μ J/ bursts of 40 μ J/ bursts (depend on Material to be cut) and 3 to 15 μm or 3-10 μm of hole interval (or spacing).The use of picosecond burst laser will be right It is in these cutting speeds preferably as they generate high power and the required amount of pulse of every bursts.Therefore, according to one A little exemplary embodiments, pulse laser generate the power of 10-100W, such as 25W to 60 watts, and at least 2-25 pulse It is 2-15 microns that every bursts, which generate the distance between burst of pulses and the defect line,；And laser beam and/or workpiece It is translated relative to each other with the rate of at least 0.25 meter per second, in some embodiments, at least 0.4 meter per second, such as 0.5 meter per second To 5 meter per seconds or faster.

It cuts and separates Chamfer Edge:

Chamfering method 1:

It was found that allowing using not strengtheningGlass, the exactly separation of the Chamfer Edge of Corning code 2320 Different situations.First method is to generate defect line using only picosecond laser and formed to follow desired shape (in this feelings Chamfer Edge under condition) fault line.After this step, can by using fracture pincers, manually bond the part or Any method that generation starts along fault line and propagate the tension of separation is completed mechanically decoupled.In order to not strengthen in 700 μ m-thicks (pre- ion exchange)Chamfer Edge is generated using defect line in glass and is mechanically decoupled the part, and discovery is used In the optimum of following option and laser parameter: picosecond laser (1064nm)

Beam diameter is input to axicon lens~2mm

Axial cone pitch-angle=10 degree

The initial collimation focal length of lens=125mm

Final objective focal length=40mm

Focusing is set to z=0.7mm (that is, linear focus be set to placed in the middle about the thickness of glass)

With 100% laser power (~40 watts) of complete power

Pulse recurrence rate=200kHz of laser.

Spacing=5 μm

3 pulses/bursts

Every single access of defect line

Sacrifice edge:

When the edge is collided, remaining defect line can have the propagation for stopping crackle in the presence of glass inner side Benefit.In the case, defect line plane can be used to serve as damage stop position, in fact generate glass relative to defect line " sacrifice " marginal portion in the region on the outside.In fact, simply there is additional lack in the inside at separated edge Line or interaction are fallen into form the production at the sacrifice edge of one group of defect line of more complicated internal chamfer on the inside of real edges Life can be any physics chamfering feature on the outer ledge for not needing the part or times for generating that feature The method for increasing partial reliability is generated in the case where what mechanical lapping and polishing.The some of edge are sacrificed for such Option is shown in FIG. 9.Due to picosecond laser process described above in single access and to be up to the production of the speed of 1m/s Raw each defect line, therefore it is easy and cost-effective for generating these additional " damage stop " lines.It should be noted that may be used also With using other laser systems with by formed laser beam focal line generate defect line.For example, it is also possible to utilize with 532nm operation Picosecond laser.

Chamfering method 2:

The exemplary formation of defect line:

In order to not strengthen in 700 μ m-thicksChamfer Edge is generated using defect line in glass and separates the portion Point, according to one embodiment, we utilize following optical device and laser parameter: picosecond laser (1064nm)

Beam diameter is input to axicon lens~2mm

Axial cone pitch-angle=10 degree

The initial collimation focal length of lens=125mm

Final objective focal length=40mm

With 100% laser power (~40 watts) of complete power

Pulse recurrence rate=200kHz of laser.

Spacing=5 μm

3 pulses/bursts

Every single access of defect line

The separation of the outside glass edge piece formed by defect line does not need to be completed by mechanical force.Due to pre- ion exchange glass Glass is generally cut and is subsequently sent to later chemical strengthening (ion exchange), it has been found that ion exchange itself can be with Enough stress is generated so that small chamfered area or corner piece are popped up the part.New ion is introduced into glass surface can be with It is enough to cause the pop-up of external corners part or high-temperature salt bath can produce that enough stress is generated between perforation or defect line Thermal stress is to induce these smallclothes to fall off.In any case, final result is preferably to imitate Existing Defects line and therefore Form the edge of desired chamfer shape.In the case where not limited by theory, applicant believes that passing through one or more glass The ion that surface enters glass will generate high stress in the corner vicinities of the glass part near the surface, and especially Concentrated area.For example, the high-level tensile stress generated in any portion of corner vicinities will be present, this is produced in these turnings The case where having given birth to separation of the driving glass along any pre-punching region (region with defect line).Referring to Figure 10 A-10C.More Definitely, Figure 10 A is that there is the cut portion of internal flaw line to be placed to the diagram in ion exchange, and which increase enough Stress perforated edge and forms desired edge chamfer to remove.Figure 10 B show ion exchange (IOX) for discharging The use at chamfering turning is similar to shown in Figure 10 A and illustrates, but only there are two defect line planes for tool.Figure 10 C is that have to be permitted The diagram of the chamfering of polygonal (being more than 3 defect line planes).It should be noted that can also be using other laser systems to pass through It forms laser beam focal line and generates defect line.For example, it is also possible to utilize the picosecond laser operated with 532nm.

Picosecond material (for example, glass) perforated portion method is with IOX exchange to generate by defect line plane Guiding is separated by control.More precisely, ion exchange (IOX) process is when being lower than the temperature of glass transition temperature by silicon glass Glass immerses the process in fusing alkali salt (such as potassium nitrate).In immersion processes, the surface is sufficiently closed to from glass Basic ion is exchanged with from those of fused salt.This process can be applied to transparent material, such as thin glass (for example, < 2mm) or curved glass, and generated glass has stronger edge and very high quality.It is generated by ion exchange Answer force profile discharges perforated edge-that is, glass is separated along fault line, to generate chamfering.Exemplary process temperature suitable for IOX bath Degree is > 300 DEG C, such as 400 DEG C or 450 DEG C or 500 DEG C or 550 DEG C or therebetween.According to some embodiments, it to be used for ion exchange The processing time for leading to the complete Chamfer Edge of good quality of bath is > 20 minutes, such as 30-60 minutes.For part chamfering, place The reason time may, for example, be 10-20 minutes or 30 minutes.The ion exchange process class for generating for chamfering or being generated for turning Be similar to for glass reinforced process or same, but when for glass along perforation removal when (that is, along one or A plurality of defect line is for generating chamfering), it is more glass reinforced than for IOX that apertured glass part can undergo ion exchange bath to continue Shorter time time (for example, continuously less than 1 hour, or such as 10 minutes to 40 minutes).Although being not intended to be limited by theory, But applicants believe that the mechanism for IOX chamfering is along the region by compression stress (CS) and/or central tension (CT) The material separation of defect line caused by generating, the stress is also referred to as tensile stress, and occurs in the material.? Before IOX bath, sample is heated to prevent to crush the thermal shock of glass part, and to minimize bath thermic load (that is, cold But it) acts on.Preheating temperature depends on the temperature of salt bath.IOX bath generates enough stress to cause external corners part or punch block It is popped up along defect line or near defect line in domain.

Figure 11 show it is several experiment (embodiment) as a result, it is described experiment using change time quantum IOX process so as to Along fault line (defect line) removal glass to generate chamfering.The horizontal axis of Figure 11 describes ion exchange and bathes Immersion time, hangs down Straight axis describes the center tension (CT) of the function as ion exchange bath Immersion time, and also describes glass and discharge (glass Separation) percentage.More precisely, the right side of this figure describes the level of compression stress (CS) as unit of megapascal, and left The depth (DOL) for the compressive stress layers that side description is generated by the IOX bath generated for chamfering.If Figure 11 is indicated, at least for one A little embodiments, the CS after IOX bath exposure about 15 minutes is about 900 to 1000 megapascal.It should be noted that exemplary at these In embodiment, glass is about 20MPa in the center tension (CT) of glass part along the complete release of fault line, at or approximately at Occur when CS peak value, the CS peak value occurs after IOX bath exposure about 15-20 minutes.Meanwhile in the turning of glassware, The tensile stress can be significantly higher.For example, tensile stress of the finite element model instruction in these corner regions can To be higher than 200MPa (for example, 250MPa), this facilitates one or more turning separation.

Figure 12 A shows the edge chamfer process by using defect line and then long IOX bath removing in 15 minutes carries out The chamfering of generation.Firstly, picosecond laser is at an angle of focusing and defect line generates in angled plane.Then will perforate glass Glass sample immerses in IOX bath, and a sheet glass is separated along defect line, to form at least partly chamfering.More precisely, root According to some embodiments, the 0.7mm with the internal flaw line (perforation) generated by picosecond laser as described above is thick Do not strengthenGlass (143mm x75mm) is pre-heated to 420 DEG C and is then placed in 420 DEG C of ion exchange bath Continue 15 minutes.Then the glass is removed, rinsing, the step for being air-dried and assessing in deionized water (DI) Suddenly.Observe that about 50% perforated edge is removed.It is, part chamfering is by making glass sample that IOX bath be undergone to continue 15 Minute is successfully realized.Some in edge are completely removed, some to be partially removed (part chamfering).As described above, Some exemplary embodiments of the chamfering generated by this process are for example shown in fig. 12.

Figure 12 B shows the edge chamfer process by using defect line and then long IOX bath removing in 15 minutes carries out The chamfering of generation.Firstly, picosecond laser is at an angle of focusing and defect line generates in angled plane.Then will perforate sample Product immerse in IOX bath, and at least a sheet glass is separated along defect line, to form chamfering.More precisely, according to some realities Example is applied, (0.7mm thickness is not strengthened by the glass-cutting with internal flaw lineGlass, 143mm × 75mm) preheating To 420 DEG C, be placed in 420 DEG C ion exchange bath in continue 60 minutes, then the glass is removed, go from Rinsing in sub- water (DI), the step of being air-dried and assess.Observe complete (100%) removal of perforated portion (along scarce Fall into line glass be ejected) and produced Chamfer Edge in excellent edge quality.

Figure 12 C shows the edge chamfer process by using defect line and then long IOX bath removing in 15 minutes carries out The chamfering of generation.Firstly, picosecond laser is at an angle of focusing and defect line generates in angled plane.Then will perforate sample Product immerse in IOX bath, and at least a sheet glass is separated along defect line, to form chamfering.More precisely, according to other realities Example is applied, (0.7mm is thick not to be strengthened by the glass-cutting with internal flaw lineGlass, 143mm × 75mm) pre-add Then heat is placed to 420 DEG C and continues 30 minutes in 420 DEG C of ion exchange bath.Perforated edge separated and Then the glass with Chamfer Edge is removed, rinsing, is air-dried and assesses in deionized water (DI).It was assessing Cheng Zhong observes the excellent edge quality of perforated portion completely removed in (100%) and Chamfer Edge.It is produced by this process Some exemplary embodiments of raw chamfering are for example shown in fig. 12 c.

Preferably, according to some embodiments, a method of manufacture chamfering and reinforcing glassware, comprising:

(i) glassware is provided, the glassware has selection profile and glass surface, and perforation (defect line) side Edge and/or turning；

(ii) neighbour of glass is removed by making product experience the first ion exchange process (for example, continuing 20 to 60 minutes) It is bordering on a part at perforated edge and/or turning, to complete integral cutting of the material between perforation；

(iii) glassware is rinsed,

(iv) glassware of rinsing is air-dried；And then

(v) so that glassware is undergone the second ion exchange process, (for example, continue at least 4 hours, or to continue 4.5 to 10 small When, and continue 4.5 to 6 hours in some embodiments) so as to strengthened glass product and improve glassware to subsequent damage The drag of wound.

Any sheet glass that the use of two-stage ion exchange process ensures to be removed is constrained to first bath, to prevent The pollution of two baths.This extends the service life of the second ion exchange bath.By the way that the part is cleaned and rinsed after first bath, This method also reduce by adhere to cut portion surface on small sheet glass cause the problem of, this can be with shield glass surface Zonule in order to avoid be reinforced in ion exchange process.

When the first ion exchange process be used to remove glass adjacent to the part at perforated edge and/or turning when, can be with IOX or DIOX process (two-stage IOX exchange process) is utilized in step (ii), to generate chamfering glassware.Hereafter may be used also With in the second ion-exchange step (above step (v)) using IOX or DIOX process so as to complete strengthened glass, so as to improve Drag of the glassware to subsequent insult.It should be noted that the second ion-exchange step (reinforcing IOX step described above (v)) it is longer than separation significantly or discharges the ion exchange process of the step of glass has generated chamfering or inclined-plane (ii).For example, The time formed for the glass release in the promotion step (ii) of the first ion exchange bath with inclined-plane/chamfering in IOX step can With than in IOX step (v) for the needs of ion exchange bath to generate reinforcing or tempered glass (the second ion exchange process) Time is 3 to 18 times short.

DIOX process be chemistry can strengthened glass be introduced into the first salt bath and the ion that is then introduced into the second salt bath is handed over Change process.First salt bath and the second salt bath may include two different salt types or they can by identical salt type (for example, Lithium, sodium, potassium, caesium, rubidium) composition.For example, first bath can be pure KCl₂And the second salt bath can be KCl₂, there are different pollutions Concentration, the sodium such as exchanged from processed glass.It is also possible to utilize different types of salt bath.This method help extends salt bath Operation lifetime.

Preferably, the first ion exchange process carries out 10 minutes to 120 minutes.It is highly preferred that in order to generate complete chamfering Edge or turning, the first ion exchange process carries out 20 minutes to 120 minutes, for example, 20 minutes, 25 minutes, 30 minutes, 45 points Clock, 60 minutes or 75 minutes.It is highly preferred that in order to generate complete Chamfer Edge or turning, the first ion exchange process carries out 20 Minute to 120 minutes, for example, 20 to 60 minutes or 30 to 60 minutes, and according to some embodiments, 30 to 50 minutes or 30 to 40 minutes.

And it is possible to using IOX or DIOX process (two-stage IOX exchange process) to strengthen chamfering glassware.For example, institute The method of stating may include: a) to provide the apertured glass product (for example, alumina silicate glass) of laser treatment；B) edge is bathed via IOX One or more defect line separation of glasses and generate Chamfer Edge and/or turning, to generate chamfering glassware, preferably Ground duration t, so that 20 minutes≤t≤60 minute, the chamfering glass had multiple first gold medals in perimeter Belong to ion；C) by multiple second metal ions in the first part of multiple first metal ions in glass and primary salt bath into Row ion exchange, wherein primary salt bath is diluted the first metal ion with the first concentration；And it d) will be multiple in glass Multiple second metal ions in the second part of first metal ion and secondary salt bath carry out ion exchange, wherein secondary salt bath The first metal with the second concentration less than the first concentration.According to some embodiments, the first metal is in lithium, sodium, potassium and caesium One and the second metal be one in sodium, potassium, caesium and rubidium.

Before in the primary salt bath for being immersed in IOX bath, chamfering glass sample is preheated to prevent thermal shock and minimum Change bath load (that is, cooling) effect.Preheating temperature depends on the temperature of salt bath.Then sample is immersed in primary bath, and Primary ion exchange stage carries out the time for being enough to realize the desired depth of layer in the first predetermined temperature, at this time from first Grade salt bath is removed glass sample and allows the glass sample cooling.Water rinsing glass sample be can use to remove residue Dry salt and the pollution for preventing secondary stage from bathing, and dry the glass sample then to remove residual moisture.It can appoint Selection of land primary salt bath submerge with corresponding in secondary salt bath between (that is, between step c and d) anneal to glass.

Before being immersed in secondary ion exchange bath, glass sample is preheated again.Secondary ion switching phase exists It carries out in secondary stage bath with fresh salt (or lower dilution rate more significant than the primary stage) to increase or to stablize first The compression stress generated in grade stage ion exchange.Sample is immersed in the bath, and secondary ion switching phase is The time for being enough to realize the desired compression stress of layer is carried out when two predetermined temperature, removes hyaloid from secondary salt bath at this time Product and allow the glass sample cooling.Water rinsing glass sample be can use to remove remaining dry salt and prevent secondary The pollution of stage bath, and dry the glass sample then to remove residual moisture.Bath and secondary are exchanged for primary ion Ion exchange bath both, by salt (or a variety of salt) melt and be heated to predefine temperature, typically from about 380 DEG C until In the range of about 450 DEG C, and the bath is maintained at that temperature in order to stabilize persistently predefining the time.

Process as described above provides following benefit: can translate so as to enhance laser treatment ability and save the cost and Therefore lower cost manufacture.In the present example, the cutting and chamfer process provide:

The part that chamfering or completely cutting have Chamfer Edge: disclosed method can be in a manner of clean and be controlled It is completely separated/cutsGlass and other kinds of transparent glass.Using two methods demonstration be kept completely separate and/or Edge chamfer.Using method 1, part cutting is reached into prescribed level or makes the part with Chamfer Edge from glass matrix Separation, and in principle, without further work-up.Using second method, part cutting is reached into defined size, is worn Hole and IOX process are used to carry out chamfering to the edge.

Defect under the surface of reduction: due to the ultrashort pulse interaction between laser and material, there are less heat Interaction and the minimum heat affected area that therefore can lead to undesirable stress and micro-crack.In addition, by laser beam condensation The defect line of typically 2 to 5 micron diameters is generated on the surface of the part to the optical device of glass.After releasing, Damage under surface can down to < 90 μm, such as < 75 μm, < 50 μm or < 40 μm.This has the edge strength of the part Strong influence and reduce needs for further grinding and polishing the edge, because when the part bears to stretch When stress, the damage under these surfaces can increase and evolve as micro-crack and weaken the intensity at the edge.

Process cleans degree: the example embodiment method of present disclosure can carry out glass in a manner of cleaning and is controlled Chamfering.It the use of conventional ablation process is very problematic, because they generate many fragments.The fragment that such ablation generates is It is problematic, because being likely difficult to remove, even if utilizing different cleaning and cleaning program.Any adherency particle can cause later The defect of process, glass is applied or is metallized to generate thin film transistor (TFT) etc. in this process.The characteristic of laser pulse Induction interaction with the material with present disclosure method avoids this problem, because they occur simultaneously in very short markers And induction fuel factor is minimized to the transparent material of laser emission.Since defect line generates in object, fragment and adhered particles Presence during cutting step is substantially eliminated.If there is any particle generated by produced defect line, their quilts Good includes until the part is separated.

The elimination of process steps

The process that glass plate is made as final size and shape is related to several steps for the inserts of glass from introducing, is wrapped It includes and cuts the panel, cutting reaches defined size, finishing and edge shaping, by the parts thinner to their target Thickness, polishing and chemical strengthening is even carried out in some cases.Any elimination in these steps will be in the processing time Cost is generated with improving in terms of capital cost.The method presented can reduce the quantity of step, such as pass through:

Reduce the potential elimination of fragment and edge defect generation-cleaning and drying table.

Sample is directly cut into its final size-with profiled edge, shape and thickness to reduce or eliminate for machine The needs of tool finishing line and the non value added costs being associated.

All patents cited herein, published application teachings related to reference are by reference in their whole Hold and combines.

Although there is described herein exemplary embodiment, by be appreciated by those skilled in the art be can be not Different changes can be made to form and details at this in the case where the range of the invention for including by appended claim Change.

Claims

1. the method that a kind of pair of material carries out chamfering, comprising:

The laser beam focal line is directed in the material with the first incidence angle relative to the material, the laser beam is burnt Line generates induction in the material and absorbs, and the induction, which is absorbed, generates defect in the material along the laser beam focal line Line；

Translate relative to each other the material and the laser beam, thus along the first plane in described first jiao in institute It states laser in material and drills out a plurality of defect line；

The laser beam focal line is directed in the material with the second incidence angle relative to the material, the laser beam is burnt Line generates induction in the material and absorbs, and the induction, which is absorbed, generates defect in the material along the laser beam focal line Line；

Translate relative to each other the material and the laser beam, thus along the second plane in described second jiao in institute It states laser in material and drills out a plurality of defect line, second plane intersects with first plane, and

By to the material application ion exchange process come along material described in first plane and second planar separation Material, wherein in separation process of the material along first plane and second plane, the ion exchange process It is applied to the material and duration t, wherein 10 minutes≤t≤120 minute.

2. the method as described in claim 1, wherein with the first incidence angle relative to the material by the laser beam focal line Be directed in the material is to be directed to the first surface of the material and to incite somebody to action relative to the second incidence angle of the material It is the second surface for being directed to the material in the material that the laser beam focal line, which is directed to,.

3. method according to claim 2, wherein the material along first plane and second planar separation with Just the edge of chamfering is limited.

4. the method as described in claim 1 further comprises:

The laser beam focal line is directed in the material with the third incidence angle relative to the material, the laser beam is burnt Line generates induction in the material and absorbs, and the induction, which is absorbed, generates defect in the material along the laser beam focal line Line；And

Translate relative to each other the material and the laser beam, thus along the third plane in the third angle in institute It states laser in material and drills out a plurality of defect line；

Wherein at least two intersections in first plane, second plane and the third plane.

5. method as claimed in claim 4, wherein the material is along first plane, second plane and described Three planar separations are to limit the edge of chamfering.

6. method as claimed in claim 4, wherein described first jiao, one in second jiao and the third angle it is vertical In the surface of the material.

7. method according to any one of the preceding claims, wherein the pulse duration greater than about 1 picosecond be less than about Between 100 picoseconds.

8. the method for claim 7, wherein the pulse duration greater than about 5 picoseconds be less than about 20 picoseconds it Between in the range of.

9. the method as described in claim 1, wherein repetitive rate is between about 1kHz and 2MHz.

10. the method for claim 7, wherein the repetitive rate is between about 10kHz and 650kHz.

11. the method as described in claim 1 to 6, wherein the pulse laser beam has what is measured at the material to be greater than The average laser power of 40 every millimeter of material thickness of μ J.

12. the method as described in claim 1 to 6, wherein the pulse is generated with the bursts at least two pulses, institute Bursts are stated by separating in about 1 nanosecond and the duration between about 50 nanoseconds, and the bursts repeat frequency Rate is between about 1kHz and about 650kHz.

13. the method as described in claim 1 to 6, wherein the pulse laser beam have be selected such that the material or Workpiece wavelength substantial transparent at this wavelength.

14. the method as described in claim 1 to 6, wherein (i) the laser beam focal line have about 0.1mm and about 100mm it Between in the range of length；And/or (ii) described laser beam focal line has putting down between about 0.1 μm with about 5 μm Equal spot diameter.

15. the method as described in claim 1 to 6, wherein the material or the workpiece include the glass that do not strengthen.

16. the method as described in claim 1 to 6, wherein in the material along first plane and second plane Separation process in, the ion exchange process is applied to the material and duration t, wherein 20 minutes≤t≤60 point Clock.

17. the method as described in claim 1 to 6 further comprises that the material is made to undergo the second ion exchange process, so as to Strengthen the material and improves material to the drag of subsequent insult.

18. the method that a kind of pair of material carries out chamfering, comprising:

It is observed along beam propagation direction, pulse laser beam is focused into laser beam focal line；And

By following steps, along each of N number of plane, the laser in the material drills out a plurality of defect line, for the N Each of a plane:

The laser beam focal line is directed in the material with the corresponding incidence angle relative to the material, the laser beam is burnt Line generates induction in the material and absorbs, and the induction, which is absorbed, generates defect in the material along the laser beam focal line Line；And

Translate relative to each other the material and the laser beam, thus along the respective planes laser in N number of plane Drill out a plurality of defect line；And

By separating the material along at least one of described N number of plane to the material application ion exchange process.

19. a kind of method for glassware that manufacture chamfering and reinforcing, comprising:

(i) glassware is provided, the glassware has a selection profile and glass surface, and perforation edge and/or turn Angle；

(ii) side adjacent to the perforation of the glass is removed by making the product undergo the first ion exchange process The part at edge and/or turning, to complete the integral cutting between perforation；

(iii) glassware is rinsed,

(iv) rinsed glassware is air-dried；And then

(v) glassware is made to undergo the second ion exchange process to strengthen the glassware and to improve the glass Drag of the product to subsequent insult.

20. a kind of glassware prepared by method described in any one of claim 1-19, wherein the side of the chamfering Edge have be less than or the surface of the depth equal to about 75 μm under damage.

21. glassware as claimed in claim 20, wherein the edge of the chamfering has the surface Ra for being less than about 0.5 μm thick Rugosity.

22. glassware as claimed in claim 20, wherein the edge of the chamfering, which has, is less than or is equal to about 30 μm Depth surface under damage.