CN106130316B - A kind of current transformer module based on perpendicular dress stack bus bar - Google Patents
A kind of current transformer module based on perpendicular dress stack bus bar Download PDFInfo
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- CN106130316B CN106130316B CN201610340234.XA CN201610340234A CN106130316B CN 106130316 B CN106130316 B CN 106130316B CN 201610340234 A CN201610340234 A CN 201610340234A CN 106130316 B CN106130316 B CN 106130316B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention is intended to provide the good current transformer module based on perpendicular dress stack bus bar of a kind of compact-sized, connection and reasonable arrangement, high safety and reliability, easy to maintain and electrical property.In the present invention, three-phase Half-bridge DC busbar is made of the positive busbar and negative busbar symmetrically overlapped, insulating layer is provided between positive busbar and negative busbar, the input anode of positive busbar and the input cathode of negative busbar are correspondingly connected with the anode and cathode of IGBT power devices respectively, the anode and cathode of IGBT power devices are symmetrical arranged in the both sides of three-phase Half-bridge DC busbar, the capacitance window equal with peak absorbing number of capacitors is offered in the lower edge of three-phase Half-bridge DC busbar, peak absorbing capacitor is located at capacitance window and the anode and cathode of peak absorbing capacitor are correspondingly connected with the anode and cathode of IGBT power devices respectively, direct current support capacitor is connected on three-phase Half-bridge DC busbar.Present invention can apply to field of electrical equipment.
Description
Technical field
The present invention relates to a kind of power equipment more particularly to a kind of current transformer modules based on perpendicular dress stack bus bar.
Background technology
The research of current domestic new energy current transformer is still within the starting stage, and power cell configuration is more only examined
It is beautiful to consider appearance, few performances pursued being outstanding, each component with power device cooperation largely can not be with absorption
With power expansion unit balanced Matching.Since IGBT conveyance capacities limit, obtained not needing place used in parallel, performance in parallel
To guarantee, it is difficult to which the high current current transformer for realizing current power battery production is applied in charger or electrokinetic cell place
It is limited.
Currently, powerful current transformer is generally used using single current transformer bridge arm as the side of a power unit module
Formula is composed by module-external connection.Meanwhile individual module configures single wind turbine, the advantages of this pattern, is：Configuration
Flexibly, the current transformer of different capacity rank is configurable to by combination；Modular organization, it is easy for installation, it is easy to accomplish large quantities of
Amount production.Its shortcoming is that：Since component is more, centralized arrangement is difficult to form air duct, component loss after power module
The heat of generation is not easy to disperse, while monomer module heat dissipating is not easily accomplished extension, and fan trouble influences in current transformer operation
It is larger, at the same consider safe insulation distance, power unit module volume is generally bigger than normal, be not suitable for as wind-powered electricity generation industry by
The industry of space limitation, it is larger additionally, due to the power cell otherness independently arranged, it can not accomplish to realize in parallel connection and flow
Control.
Invention content
The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art and provide a kind of compact-sized, arrangement conjunction
The good current transformer module based on perpendicular dress stack bus bar of reason, high safety and reliability, easy to maintain and electrical property.
The technical solution adopted in the present invention is：The present invention includes supporting rack, cooling system, several IGBT power devices
Part, several peak absorbing capacitors, driving unit, three-phase Half-bridge DC busbar and several direct current support capacitors, it is several described
IGBT power devices equidistantly distribute on the cooling system, and the three-phase Half-bridge DC busbar is vertically arranged in the IGBT
On power device, the three-phase Half-bridge DC busbar is made of the positive busbar and negative busbar symmetrically overlapped, in the positive pole
Insulating layer is provided between row and the negative busbar, the input anode of the positive busbar and the input cathode of the negative busbar are distinguished
It is correspondingly connected with the anode and cathode of the IGBT power devices, the anode and cathode of the IGBT power devices are in the three-phase
The both sides of Half-bridge DC busbar are symmetrical arranged, and are offered in the lower edge of the three-phase Half-bridge DC busbar and the spike
The equal numbers of capacitance window of absorption capacitor, the peak absorbing capacitor is located at the capacitance window and the spike is inhaled
The anode and cathode of current condenser are correspondingly connected with the anode and cathode of the IGBT power devices respectively, several direct current branch
Support capacitor is connected on the three-phase Half-bridge DC busbar.
As it can be seen that IGBT power devices are arranged on cooling system the present invention, peak absorbing capacitor passes through said program
Positive and negative anodes are connected on the positive and negative anodes of IGBT power devices, and three-phase Half-bridge DC busbar is vertically arranged in the IGBT power devices
Upper and positive busbar input anode and the input cathode of the negative busbar anode and cathode with the IGBT power devices respectively
It is correspondingly connected with, the anode and cathode of IGBT power devices are symmetrical arranged in the both sides of the three-phase Half-bridge DC busbar, structure
It is compact, connection and reasonable arrangement, compared with prior art, three-phase Half-bridge DC busbar and IGBT power device vertical connections, it is therein just
The distance of busbar and negative busbar to the positive and negative anodes of IGBT power devices is equal, achievees the effect that flow；The three-phase Half-bridge DC
Busbar is made of the positive busbar and negative busbar symmetrically overlapped, and insulation is provided between the positive busbar and the negative busbar
Layer, positive busbar therein overlap lamination with negative busbar, insulating layer are added in centre, to realize the large area weight of DC master row
It is folded, avoid the distribution stray inductance of busbar excessive, and then improve its electrical property；In addition, being arranged peak absorbing capacitor in electricity
Hold at window and positive and negative anodes of its positive and negative anodes directly with IGBT power devices is made to be connected respectively, shortens peak absorbing capacitance
Device is to the distance of IGBT power devices, and without the input of PCB connecting plates or other lines, total is more succinct, and reduces
Inductance value of the IGBT power devices to peak absorbing capacitor；In addition, direct current support capacitor is arranged in three-phase Half-bridge DC
On busbar, by the connection of three-phase Half-bridge DC busbar, avoids and pass through between IGBT power devices and direct current support capacitor
Pcb board or connecting line and the problem for causing plate grade impedance excessive；Each device in the module is convenient to mount and dismount, maintaining
Convenient, maintenance cost is low；Even more important is a bit, by the setting of three-phase Half-bridge DC busbar, it can be achieved that high voltage, big electricity
Stream, great power conversion circuit, current-carrying capability are greatly improved.
As a preferred scheme, the first output cathode and the second output cathode are additionally provided in the positive busbar,
First output cathode and second output cathode are separately positioned on the both sides of the edge of the positive busbar, the negative busbar
On be additionally provided with the first output negative pole and the second output negative pole, first output negative pole and second output negative pole are set respectively
It sets on the both sides of the edge of the negative busbar, after the positive busbar and negative busbar overlapping, first output cathode and institute
It states the first output negative pole to be located in the one side edge of the three-phase Half-bridge DC busbar and be staggered up and down, second output cathode
It is located on another lateral edges of the three-phase Half-bridge DC busbar with second output negative pole and is staggered up and down.
Said program is as it can be seen that first output cathode and second of the setting at positive busbar both sides of the edge are defeated in positive busbar
Go out anode, first output negative pole and second output negative pole of the setting at negative busbar both sides of the edge in negative busbar, this can pole
It solves the problems, such as that IGBT power device current-carrying capabilities are limited well, output stage is respectively provided at left and right sides of busbar, subsequently will
Busbar carries out Parallel Design and provides facility, and two sides are respectively provided with output stage, and both sides can connect other mothers when ensure that parallel connection
Row can realize high-power output, and in parallel without limitation, and maintain the effect of parallel current-sharing to achieve the purpose that dilatation.
As further preferred scheme, connection is both provided on second output cathode and second output negative pole
Bending part, the pole piece thickness of the bending height and second output cathode and second output negative pole of the connection bending part
Unanimously.
Said program as it can be seen that connection bending part setting, enable to be connected to become one before and after two busbars in parallel
Line so that busbar marshalling in parallel ensures that entire modular structure is compact；Meanwhile the setting of bending part is connected, ensure in parallel
Two busbar being connected at output stage not will produce stress, ensure reliability in parallel.
As a preferred scheme, the positive busbar input anode be located at the positive busbar downside and by it is described just
The lower part of busbar forms for 90 ° through bending, and the input cathode of the negative busbar is located at the downside of the negative busbar and by the negative mother
The lower part of row forms for 90 ° through bending.
Said program makes as it can be seen that input anode and input cathode are utilized respectively positive busbar and negative busbar bottom fold forms
The area that anode and input cathode must be inputted is wider, and the input pole of this ultra-wide ensures the handling capacity of high current, Jin Erpai
Except the current bottleneck of IGBT.
As a preferred scheme, the lower end of the insulating layer extends to the anode and cathode of the IGBT power devices
Between groove in.
Said program as it can be seen that in groove between insulating layer lower end to be extended to the anode and cathode of IGBT power devices,
It ensures insulation performance, avoids that short circuit occurs.
As a preferred scheme, the number of the IGBT power devices and the peak absorbing capacitor is disposed as
Three, there are three connecting pin, the distance between adjacent two described connecting pins for setting on the three-phase Half-bridge DC busbar
It is equal, three peak absorbing capacitors and three connecting pins positive and negative anodes with three IGBT power devices respectively
Connection.
Said program is as it can be seen that in a module, using the identical IGBT power devices of quantity, peak absorbing capacitor,
Three connecting pins of itself and three-phase Half-bridge DC busbar are made to match, and the distance between two adjacent described connecting pins phase
Deng even after parallel connection, the distance between six IGBT power devices on adjacent two modules are all equal, this guarantees
Well flow effect.
As a preferred scheme, support frame as described above includes fore-stock and after-poppet, and the fore-stock and after-poppet are perpendicular
The straight both sides being arranged on the cooling system and be located at the three-phase Half-bridge DC busbar, in the three-phase Half-bridge DC busbar
On be additionally provided with several mechanical holes, described direct current support capacitor one end is connected on the three-phase Half-bridge DC busbar, another
End is fixedly connected with the after-poppet, and several insulated columns are provided between the three-phase Half-bridge DC busbar and the fore-stock,
One end of the insulated column is fixedly connected with the mechanical hole, and the other end is fixedly connected with the fore-stock.
Said program as it can be seen that supporting rack setting, can by three-phase Half-bridge DC busbar and be arranged in three-phase Half-bridge DC
Direct current support capacitor support on busbar is lived, and then ensures that IGBT power devices will not be oppressed, and ensures excellent electrical properties.
As a preferred scheme, the cooling system is fan-cooled radiator, water-cooling type radiator or air-cooled and water
Cold type radiator.
Said program as it can be seen that cooling system setting can by module generate heat take away, ensure the electrical property of module
Preferably.
As scheme still further preferably, the number of the direct current support capacitor is set as 6,6 DC supports
Capacitor is evenly distributed on the three-phase Half-bridge DC busbar.
Said program is as it can be seen that direct current support capacitor can increase or decrease direct current as needed using thin film capacitor
The input of support capacitor, to meet different requirement on electric performance.
Description of the drawings
Fig. 1 is the circuit topology figure of the present invention；
Fig. 2 is the positive easy structure schematic diagram of the present invention；
Fig. 3 is the side structure schematic diagram of the present invention；
Fig. 4 is the enlarged structure schematic diagram of part A in Fig. 3；
Fig. 5 is the end structure illustration of the three-phase Half-bridge DC busbar；
Fig. 6 is the overlooking structure diagram of the three-phase Half-bridge DC busbar；
Fig. 7 is the easy structure schematic diagram of two modules in parallel.
Specific implementation mode
As shown in Figures 1 to 7, in the present embodiment, module includes 2, three supporting rack 1, cooling system IGBT power devices
3, three peak absorbing capacitors 4 of part, driving unit 5, three-phase Half-bridge DC busbar 6 and six direct current support capacitors 7, this 6
A direct current support capacitor 7 is using thin film capacitor and is evenly distributed on the three-phase Half-bridge DC busbar 6.Support frame as described above
1 includes fore-stock 1a and after-poppet 1b, and the fore-stock 1a and after-poppet 1b are vertically arranged on the cooling system 2 and are located at
The both sides of the three-phase Half-bridge DC busbar 6 are also set up on the three-phase Half-bridge DC busbar 6 there are four mechanical hole 66, institute
It states 7 one end of direct current support capacitor to be connected on the three-phase Half-bridge DC busbar 6, the other end is fixed with the after-poppet 1b to be connected
It connects, there are four insulated column 9, one end of the insulated column 9 for setting between the three-phase Half-bridge DC busbar 6 and the fore-stock 1a
It is fixedly connected with the mechanical hole 66, the other end is fixedly connected with the fore-stock 1a.Three IGBT power devices 3 are equidistant
From being distributed on the cooling system 2, the three-phase Half-bridge DC busbar 6 is vertically arranged on the IGBT power devices 3.
There are three connecting pin 65, the distance between adjacent two described connecting pins 65 phases for setting on the three-phase Half-bridge DC busbar 6
It is positive and negative with three IGBT power devices 3 respectively Deng, three peak absorbing capacitors 4 and three connecting pins 65
Pole connects.The cooling system 2 is fan-cooled radiator, water-cooling type radiator or air-cooled and water-cooling type radiator.In this implementation
Fan-cooled radiator is used in example.The fan-cooled radiator includes air duct 10 and the wind turbine 11 in 10 end of air duct is arranged,
Radiating fin 12 is provided in the air duct 10.
The three-phase Half-bridge DC busbar 6 is made of the positive busbar 61 and negative busbar 62 symmetrically overlapped.It is described just
Insulating layer 63 is provided between busbar 61 and the negative busbar 62.The lower end of the insulating layer 63 extends to the IGBT power devices
In groove between the anode and cathode of part 3.The input anode 611 of the positive busbar 61 and the input cathode of the negative busbar 62
621 are correspondingly connected with the anode and cathode of the IGBT power devices 3 respectively.The input anode 611 of the positive busbar 61 is located at
It the downside of the positive busbar 61 and is formed for 90 ° through bending by the lower part of the positive busbar 61, the input cathode of the negative busbar 62
621 are located at the downside of the negative busbar 62 and are formed for 90 ° through bending by the lower part of the negative busbar 62.The IGBT power devices
3 anode and cathode is symmetrical arranged in the both sides of the three-phase Half-bridge DC busbar 6.Is additionally provided in the positive busbar 61
One output cathode 612 and the second output cathode 613, first output cathode 612 and second output cathode 613 are set respectively
It sets on the both sides of the edge of the positive busbar 61, the output of the first output negative pole 622 and second is additionally provided in the negative busbar 62
Cathode 623, first output negative pole 622 and second output negative pole 623 are separately positioned on the both sides of the negative busbar 62
On edge, after the positive busbar 61 and the overlapping of the negative busbar 62, first output cathode 612 and first output negative pole
622 are located in the one side edge of the three-phase Half-bridge DC busbar 6 and are staggered up and down, second output cathode 613 and described
Second output negative pole 623 is located on another lateral edges of the three-phase Half-bridge DC busbar 6 and is staggered up and down.Second output
Anode 613 and second output negative pole 623 on be both provided with connection bending part 8, it is described connection bending part 8 bending height with
The pole piece consistency of thickness of second output cathode 613 and second output negative pole 623.
It is offered in the lower edge of the three-phase Half-bridge DC busbar 6 and 4 number phase of the peak absorbing capacitor
Deng capacitance window 64.The peak absorbing capacitor 4 is located at the capacitance window 64 and the peak absorbing capacitor 4
Anode and cathode are correspondingly connected with the anode and cathode of the IGBT power devices 3 respectively, and the direct current support capacitor 7 connects
On the three-phase Half-bridge DC busbar 6.
Compared with prior art, the present invention problems with can be solved：
1, the capacitance equal with peak absorbing number of capacitors is offered in the lower edge of three-phase Half-bridge DC busbar
Window, peak absorbing capacitor be located at capacitance window and the anode and cathode of peak absorbing capacitor respectively with IGBT power devices
The anode and cathode of part are correspondingly connected with；This solves high-voltage I GBT power devices and peak absorbing capacitor hypertelorism, even
Connect the problem of being 90 ° of bendings mostly, reduce IGBT power devices to peak absorbing capacitor inductance value.
2, three-phase Half-bridge DC busbar is vertically arranged on IGBT power devices, and direct current support capacitor is connected to three-phase half
On bridge DC master row；This is solved causes plate grade to hinder between IGBT power devices and direct current support capacitor by PCB or line etc.
Anti- excessive problem.
3, all components of module of the present invention are fixed by screw, and installation or removal are extremely convenient, solve power device
Part is the problem of interior power modules replace difficult accessory or even all dismantlings.
4, the input anode of positive busbar is located at the downside of positive busbar and is formed for 90 ° through bending by the lower part of positive busbar, bears mother
The input cathode of row is located at the downside of negative busbar and forms input pole width made of bending for 90 ° through bending by the lower part of negative busbar
Larger with area, high current, high-power, big voltage pass through；It solves high current between IGBT power devices and support capacitor to connect
Wiring/meticulous/thin/narrow problem of copper foil/copper bar.
5, the driving unit in the present invention is arranged on cooling system, and the connection with IGBT power devices is to pass through connection
Foot is directly connected to, and is not necessarily to lead, solves driving unit high pressure detection lead-out wire connectivity problem.
6, first output cathode and the second output cathode, the first output cathode and the second output cathode are set in positive busbar
It is separately positioned on the both sides of the edge of positive busbar, the first output negative pole and the second output negative pole, the first output is set in negative busbar
Cathode and the second output negative pole are separately positioned on the both sides of the edge of negative busbar, after positive busbar and negative busbar overlapping, the first output
Anode and the first output negative pole are located in the one side edge of three-phase Half-bridge DC busbar and are staggered up and down, the second output cathode and the
Two output negative poles are located on another lateral edges of three-phase Half-bridge DC busbar and are staggered up and down, the second output cathode and the second output
It is respectively provided with connection bending part on cathode, connects the pole piece of the bending height and the second output cathode and the second output negative pole of bending part
Consistency of thickness can easily carry out module and modules in parallel for needing high-power, high current, big voltage output occasion；
Solve the problems, such as that high-power output redesigns power modules, prime power module can be in parallel without limitation, and ensures parallel connection
Flow.
7, the present invention has accomplished entire module installation without line, and the arbitrary accessory dismounting and change of module internal is not related to other and matches
Part, installation and removal are all extremely convenient, greatly convenient maintaining；The module is standalone module, can be with miscellaneous equipment
Cabinet facilitates installation and dismounting, may be implemented to produce in batches, to reduce cost.
Present invention can apply to field of electrical equipment.
Claims (9)
1. a kind of current transformer module based on perpendicular dress stack bus bar, including supporting rack（1）, cooling system（2）, several IGBT work(
Rate device（3）, several peak absorbing capacitors（4）, driving unit（5）, three-phase Half-bridge DC busbar（6）And several DC supports
Capacitor（7）, it is characterised in that：Several IGBT power devices（3）It equidistantly distributes in the cooling system（2）On, institute
State three-phase Half-bridge DC busbar（6）It is vertically arranged in the IGBT power devices（3）On, the three-phase Half-bridge DC busbar（6）
By the positive busbar symmetrically overlapped（61）And negative busbar（62）Composition, in the positive busbar（61）With the negative busbar（62）It
Between be provided with insulating layer（63）, the positive busbar（61）Input anode（611）With the negative busbar（62）Input cathode
（621）Respectively with the IGBT power devices（3）Anode and cathode be correspondingly connected with, the IGBT power devices（3）Anode
With cathode in the three-phase Half-bridge DC busbar（6）Both sides be symmetrical arranged, in the three-phase Half-bridge DC busbar（6）Downside
It is offered on edge and the peak absorbing capacitor（4）Equal numbers of capacitance window（64）, the peak absorbing capacitor
（4）Positioned at the capacitance window（64）Place and the peak absorbing capacitor（4）Anode and cathode respectively with the IGBT work(
Rate device（3）Anode and cathode be correspondingly connected with, several direct current support capacitors（7）It is connected to the three-phase Half-bridge DC
Busbar（6）On.
2. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：It is described just
Busbar（61）On be additionally provided with the first output cathode（612）With the second output cathode（613）, first output cathode（612）
With second output cathode（613）It is separately positioned on the positive busbar（61）Both sides of the edge on, the negative busbar（62）On
It is additionally provided with the first output negative pole（622）With the second output negative pole（623）, first output negative pole（622）With described second
Output negative pole（623）It is separately positioned on the negative busbar（62）Both sides of the edge on, the positive busbar（61）With the negative busbar
（62）After overlapping, first output cathode（612）With first output negative pole（622）Positioned at three-phase Half-bridge DC mother
Row（6）One side edge on and be staggered up and down, second output cathode（613）With second output negative pole（623）It is located at
The three-phase Half-bridge DC busbar（6）Another lateral edges on and be staggered up and down.
3. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 2, it is characterised in that：Described second
Output cathode（613）With second output negative pole（623）On be both provided with connection bending part（8）, the connection bending part（8）
Bending height and second output cathode（613）With second output negative pole（623）Pole piece consistency of thickness.
4. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：The positive pole
Row（61）Input anode（611）Positioned at the positive busbar（61）Downside and by the positive busbar（61）Lower part through bending
90 ° form, the negative busbar（62）Input cathode（621）Positioned at the negative busbar（62）Downside and by the negative busbar
（62）Lower part formed for 90 ° through bending.
5. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：The insulation
Layer（63）Lower end extend to the IGBT power devices（3）Anode and cathode between groove in.
6. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：The IGBT
Power device（3）With the peak absorbing capacitor（4）Number be disposed as three, in the three-phase Half-bridge DC busbar
（6）There are three connecting pins for upper setting（65）, adjacent two connecting pins（65）The distance between equal, three spikes
Absorption capacitor（4）With three connecting pins（65）Respectively with three IGBT power devices（3）Positive and negative anodes connection.
7. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：The support
Frame（1）Including fore-stock（1a）And after-poppet（1b）, the fore-stock（1a）And after-poppet（1b）It is vertically arranged in the heat dissipation
System（2）Above and it is located at the three-phase Half-bridge DC busbar（6）Both sides, in the three-phase Half-bridge DC busbar（6）On also set
It is equipped with several mechanical holes（66）, the direct current support capacitor（7）One end is connected to the three-phase Half-bridge DC busbar（6）On,
The other end and the after-poppet（1b）It is fixedly connected, the three-phase Half-bridge DC busbar（6）With the fore-stock（1a）Between set
It is equipped with several insulated columns（9）, the insulated column（9）One end and the mechanical hole（66）Be fixedly connected, the other end with it is described before
Holder（1a）It is fixedly connected.
8. a kind of current transformer module based on perpendicular dress stack bus bar according to claim 1, it is characterised in that：The heat dissipation
System（2）For fan-cooled radiator, water-cooling type radiator or air-cooled and water-cooling type radiator.
9. according to a kind of current transformer module based on perpendicular dress stack bus bar of claim 1 to 8 any one of them, feature exists
In：The direct current support capacitor（7）Number be set as 6,6 direct current support capacitors（7）It is evenly distributed on described three
Phase Half-bridge DC busbar（6）On.
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| CN106130316B true CN106130316B (en) | 2018-08-14 |
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| CN110890830A (en) * | 2018-09-07 | 2020-03-17 | 中车株洲电力机车研究所有限公司 | Direct current conversion loop module for high-frequency converter power module |
| CN109286304B (en) * | 2018-10-18 | 2020-07-21 | 许继集团有限公司 | Wind power converter and laminated busbar thereof |
| CN113179031B (en) * | 2021-04-28 | 2022-08-19 | 北京国家新能源汽车技术创新中心有限公司 | Integrated dc-to-ac converter direct current supports electric capacity, motor and vehicle |
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| CN202798482U (en) * | 2012-07-25 | 2013-03-13 | 特变电工新疆新能源股份有限公司 | Power module and photovoltaic grid-connected inversion system |
| CN204068683U (en) * | 2014-09-04 | 2014-12-31 | 永济新时速电机电器有限责任公司 | A kind of capacitance group of efficient low sense and install the power cell of this capacitance group |
| CN205666751U (en) * | 2016-05-20 | 2016-10-26 | 珠海九源电力电子科技有限公司 | Converter module based on erect female row of dress stromatolite |
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| CN106130316A (en) | 2016-11-16 |
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