CN106130316A - A kind of current transformer module based on perpendicular dress stack bus bar - Google Patents
A kind of current transformer module based on perpendicular dress stack bus bar Download PDFInfo
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- CN106130316A CN106130316A CN201610340234.XA CN201610340234A CN106130316A CN 106130316 A CN106130316 A CN 106130316A CN 201610340234 A CN201610340234 A CN 201610340234A CN 106130316 A CN106130316 A CN 106130316A
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- busbar
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
It is desirable to provide the current transformer module based on perpendicular dress stack bus bar that a kind of compact conformation, connection and reasonable arrangement, security reliability are high, easy to maintenance and electrical property is good.In the present invention, three-phase Half-bridge DC busbar is made up of the positive busbar overlapped symmetrically and negative busbar, it is provided with insulating barrier between positive busbar and negative busbar, the input positive pole of positive busbar is corresponding with the positive pole of IGBT power device and negative pole respectively with the input negative pole of negative busbar to be connected, the positive pole of IGBT power device and negative pole are arranged in the lateral symmetry of three-phase Half-bridge DC busbar, the lower edge of three-phase Half-bridge DC busbar offers the electric capacity window equal with peak absorbing number of capacitors, peak absorbing capacitor is positioned at electric capacity window and the positive pole of peak absorbing capacitor and negative pole is corresponding with the positive pole of IGBT power device and negative pole respectively connects, direct current support capacitor is connected on three-phase Half-bridge DC busbar.Present invention can apply to field of electrical equipment.
Description
Technical field
The present invention relates to a kind of power equipment, particularly relate to a kind of current transformer module based on perpendicular dress stack bus bar.
Background technology
The research of the new forms of energy current transformer of Present Domestic is still within the starting stage, and power cell configuration is more only examined
Considering outward appearance beautiful, seldom have the performance pursued being outstanding, each assembly coordinated with power device to a great extent cannot be with absorption
With power expansion unit balanced Matching.Owing to IGBT conveyance capacity limits, needing place used in parallel, performance in parallel obtains not
To ensureing, it is difficult to realize the big current converter of current power battery production, apply at charger or electrokinetic cell place
Limited.
At present, the commonly used side using single current transformer brachium pontis as a power unit module of powerful current transformer
Formula, is connected by module-external and combines.Meanwhile, individual module configures single blower fan, and the advantage of this pattern is: configuration
Flexibly, the current transformer of different capacity rank it is configurable to by combination；Modular organization, easy for installation, it is easy to accomplish large quantities of
Amount produces.Its shortcoming is: owing to components and parts are more, and centralized arrangement is difficult to form air channel after power model, and components and parts are lost
The heat produced is difficult to disperse, and monomer module heat dissipating is not easily accomplished extension simultaneously, and fan trouble affects in current transformer runs
Relatively big, simultaneously take account of safe insulation distance, power unit module volume is bigger than normal, is not suitable for as wind-powered electricity generation industry being subject to
The industry that space limits is bigger additionally, due to the independent power cell diversity arranged, it is impossible to accomplish to realize current-sharing when parallel connection
Control.
Summary of the invention
The technical problem to be solved is to overcome the deficiencies in the prior art, it is provided that a kind of compact conformation, layout are closed
Reason, the current transformer module based on perpendicular dress stack bus bar that security reliability is high, easy to maintenance and electrical property is good.
The technical solution adopted in the present invention is: the present invention includes bracing frame, cooling system, several IGBT power devices
Part, some peak absorbing capacitors, driver element, three-phase Half-bridge DC busbar and some direct current support capacitors, some described
IGBT power device equidistantly distributes on described cooling system, and described three-phase Half-bridge DC busbar is vertically arranged in described IGBT
On power device, described three-phase Half-bridge DC busbar is made up of the positive busbar overlapped symmetrically and negative busbar, described positive mother
Being provided with insulating barrier between row and described negative busbar, the input positive pole of described positive busbar and the input negative pole of described negative busbar are respectively
Connection corresponding with the positive pole of described IGBT power device and negative pole, the positive pole of described IGBT power device and negative pole are at described three-phase
The lateral symmetry of Half-bridge DC busbar is arranged, and offers and described spike in the lower edge of described three-phase Half-bridge DC busbar
Absorption capacitor equal numbers of electric capacity window, described peak absorbing capacitor is positioned at described electric capacity window and described spike is inhaled
The positive pole of current condenser is corresponding with the positive pole of described IGBT power device and negative pole respectively with negative pole to be connected, and some described direct currents prop up
Support capacitor is connected on described three-phase Half-bridge DC busbar.
Such scheme is visible, and IGBT power device is arranged on cooling system by the present invention, and peak absorbing capacitor passes through
Both positive and negative polarity is connected on the both positive and negative polarity of IGBT power device, and three-phase Half-bridge DC busbar is vertically arranged in described IGBT power device
The input positive pole of upper and positive busbar and the input negative pole of described negative busbar respectively with positive pole and the negative pole of described IGBT power device
Correspondence connects, and the positive pole of IGBT power device and negative pole are arranged in the lateral symmetry of described three-phase Half-bridge DC busbar, its structure
Compact, connection and reasonable arrangement, compared with prior art, three-phase Half-bridge DC busbar is vertical with IGBT power device to be connected, therein just
Busbar and negative busbar are equal to the distance of the both positive and negative polarity of IGBT power device, reach the effect of current-sharing；Described three-phase Half-bridge DC
Busbar is made up of the positive busbar overlapped symmetrically and negative busbar, is provided with insulation between described positive busbar and described negative busbar
Layer, positive busbar therein overlaps with negative busbar lamination, at centre interpolation insulating barrier, thus realizes the large area weight of DC master row
Folded, it is to avoid the distribution stray inductance of busbar is excessive, and then improves its electrical property；It addition, peak absorbing capacitor is arranged on electricity
Hold at window and make its both positive and negative polarity both positive and negative polarity directly with IGBT power device be connected respectively, shortening peak absorbing electric capacity
Device is to the distance of IGBT power device, it is not necessary to PCB connecting plate or the input of other lines, and total is more succinct, and reduces
The IGBT power device inductance value to peak absorbing capacitor；Additionally, direct current support capacitor is arranged on three-phase Half-bridge DC
On busbar, by the connection of three-phase Half-bridge DC busbar, it is to avoid pass through between IGBT power device and direct current support capacitor
Pcb board or connecting line and cause the excessive problem of plate level impedance；Each device in this module is all convenient to mount and dismount, its maintaining
Convenient, maintenance cost is low；Even more important a bit, by the setting of three-phase Half-bridge DC busbar, high voltage, greatly electricity can be realized
Stream, great power conversion circuit, its current capacity is greatly improved.
As a preferred scheme, described positive busbar is additionally provided with the first output cathode and the second output cathode,
Described first output cathode and described second output cathode are separately positioned on the both sides of the edge of described positive busbar, described negative busbar
On be additionally provided with the first output negative pole and the second output negative pole, described first output negative pole and described second output negative pole and set respectively
Put on the both sides of the edge of described negative busbar, after described positive busbar and described negative busbar overlapping, described first output cathode and institute
State the first output negative pole be positioned on a lateral edges of described three-phase Half-bridge DC busbar and stagger up and down, described second output cathode
With on the opposite side edge that described second output negative pole is positioned at described three-phase Half-bridge DC busbar and stagger up and down.
Such scheme is visible, arranges and be positioned at the first output cathode at positive busbar both sides of the edge and second defeated on positive busbar
Going out positive pole, arrange and be positioned at the first output negative pole at negative busbar both sides of the edge and the second output negative pole on negative busbar, this can pole
Solve well the problem that IGBT power device current capacity is limited, be respectively provided with output stage in the left and right sides of busbar, incite somebody to action for follow-up
Busbar carries out Parallel Design provides convenient, and two sides are respectively provided with output stage, it is ensured that time in parallel, both sides all can connect other mother
Row, thus reach the purpose of dilatation, it is possible to realize high-power output, and in parallel unrestricted, and maintain the effect of parallel current-sharing.
It is provided with connection as on further preferred scheme, described second output cathode and described second output negative pole
Bending part, bending height and described second output cathode and the pole piece thickness of described second output negative pole of described connection bending part
Unanimously.
Such scheme is visible, connects the setting of bending part, it is possible to be connected to become one before and after making two busbars of parallel connection
Line so that busbar marshalling in parallel, it is ensured that whole modular structure is compact；Meanwhile, the setting of bending part is connected, it is ensured that in parallel
Two busbars being connected at output stage will not produce stress, it is ensured that reliability in parallel.
As a preferred scheme, the input positive pole of described positive busbar be positioned at described positive busbar downside and by described just
The bottom of busbar forms through bending 90 °, and the input negative pole of described negative busbar is positioned at the downside of described negative busbar and by described negative mother
The bottom of row forms through bending 90 °.
Such scheme is visible, and input positive pole is utilized respectively positive busbar with input negative pole and negative busbar bottom fold forms, and makes
The area that must input positive pole and input negative pole is wider, and the input pole of this ultra-wide ensure that the handling capacity of big electric current, Jin Erpai
Current bottleneck except IGBT.
As a preferred scheme, the lower end of described insulating barrier extends to positive pole and the negative pole of described IGBT power device
Between groove in.
Such scheme is visible, is extended to insulating barrier lower end in the groove between positive pole and the negative pole of IGBT power device,
Ensure that insulating properties, it is to avoid be short-circuited.
As a preferred scheme, the number of described IGBT power device and described peak absorbing capacitor is disposed as
Three, described three-phase Half-bridge DC busbar is provided with three connecting pins, the adjacent distance between two described connecting pins
Equal, three described peak absorbing capacitors and three described connecting pins respectively with the both positive and negative polarity of three described IGBT power devices
Connect.
Such scheme is visible, in a module, uses IGBT power device, peak absorbing capacitor that quantity is identical,
It is made to match with three connecting pins of three-phase Half-bridge DC busbar, and the distance phase between two adjacent described connecting pins
Deng, even after parallel connection, the adjacent distance between six IGBT power devices on two modules is all equal, and this ensures
Good current-sharing effect.
As a preferred scheme, support frame as described above includes that fore-stock and after-poppet, described fore-stock and after-poppet are perpendicular
Directly it is arranged on described cooling system and is positioned at the both sides of described three-phase Half-bridge DC busbar, at described three-phase Half-bridge DC busbar
On be additionally provided with some mechanical holes, described direct current support capacitor one end is connected on described three-phase Half-bridge DC busbar, another
Hold be connected fixing with described after-poppet, between described three-phase Half-bridge DC busbar and described fore-stock, be provided with some insulated columns,
One end of described insulated column is fixing with described mechanical hole to be connected, and the other end is fixing with described fore-stock to be connected.
Such scheme is visible, the setting of bracing frame, it is possible to by three-phase Half-bridge DC busbar and be arranged on three-phase Half-bridge DC
Direct current support capacitor support on busbar is lived, and then guarantees that IGBT power device will not be oppressed, it is ensured that electrical property is excellent.
As a preferred scheme, described cooling system is fan-cooled radiator, water-cooling type radiator or air-cooled and water
Cold type radiator.
Such scheme is visible, and the heat that module produces can be taken away by the setting of cooling system, it is ensured that the electrical property of module
Preferably.
As further preferred scheme, the number of described direct current support capacitor is set to 6, these 6 DC supports
Capacitor is evenly distributed on described three-phase Half-bridge DC busbar.
Such scheme is visible, and direct current support capacitor uses thin film capacitor, and direct current can be increased or decreased as required
The input of support capacitor, to meet different requirement on electric performance.
Accompanying drawing explanation
Fig. 1 is the circuit topology figure of the present invention；
Fig. 2 is the front easy structure schematic diagram of the present invention；
Fig. 3 is the side structure schematic diagram of the present invention；
Fig. 4 is the structure for amplifying schematic diagram of part A in Fig. 3；
Fig. 5 is the end face structure schematic diagram of described three-phase Half-bridge DC busbar；
Fig. 6 is the plan structure schematic diagram of described three-phase Half-bridge DC busbar；
Fig. 7 is the easy structure schematic diagram of two described modules in parallel.
Detailed description of the invention
As shown in Figures 1 to 7, in the present embodiment, module includes bracing frame 1,2, three IGBT power devices of cooling system
3, three peak absorbing capacitors 4 of part, driver element 5, three-phase Half-bridge DC busbar 6 and six direct current support capacitors 7, these are 6 years old
Individual direct current support capacitor 7 uses thin film capacitor and is evenly distributed on described three-phase Half-bridge DC busbar 6.Support frame as described above
1 includes that fore-stock 1a and after-poppet 1b, described fore-stock 1a and after-poppet 1b are vertically arranged on described cooling system 2 and are positioned at
The both sides of described three-phase Half-bridge DC busbar 6, are additionally provided with four mechanical holes 66, institute on described three-phase Half-bridge DC busbar 6
Stating direct current support capacitor 7 one end to be connected on described three-phase Half-bridge DC busbar 6, the other end is fixing with described after-poppet 1b even
Connect, between described three-phase Half-bridge DC busbar 6 and described fore-stock 1a, be provided with four insulated columns 9, one end of described insulated column 9
Fixing with described mechanical hole 66 and be connected, the other end is fixing with described fore-stock 1a to be connected.Three described IGBT power devices 3 are equidistant
From being distributed on described cooling system 2, described three-phase Half-bridge DC busbar 6 is vertically arranged on described IGBT power device 3.?
Three connecting pins 65, the adjacent distance phase between two described connecting pins 65 it is provided with on described three-phase Half-bridge DC busbar 6
Positive and negative with three described IGBT power devices 3 respectively Deng, three described peak absorbing capacitors 4 and three described connecting pins 65
Pole connects.Described cooling system 2 is fan-cooled radiator, water-cooling type radiator or air-cooled and water-cooling type radiator.In this enforcement
Example uses fan-cooled radiator.Described fan-cooled radiator includes air channel 10 and is arranged on the blower fan 11 of end, air channel 10,
It is provided with radiating fin 12 in described air channel 10.
Described three-phase Half-bridge DC busbar 6 is made up of the positive busbar 61 overlapped symmetrically and negative busbar 62.Described just
It is provided with insulating barrier 63 between busbar 61 and described negative busbar 62.The lower end of described insulating barrier 63 extends to described IGBT power device
In groove between positive pole and the negative pole of part 3.The input positive pole 611 of described positive busbar 61 and the input negative pole of described negative busbar 62
621 connections corresponding with the positive pole of described IGBT power device 3 and negative pole respectively.The input positive pole 611 of described positive busbar 61 is positioned at
The downside of described positive busbar 61 and being formed through bending 90 ° by the bottom of described positive busbar 61, the input negative pole of described negative busbar 62
621 downsides being positioned at described negative busbar 62 and the bottom by described negative busbar 62 form through bending 90 °.Described IGBT power device
The positive pole of 3 and negative pole are arranged in the lateral symmetry of described three-phase Half-bridge DC busbar 6.Described positive busbar 61 is additionally provided with
One output cathode 612 and the second output cathode 613, described first output cathode 612 and described second output cathode 613 set respectively
Put on the both sides of the edge of described positive busbar 61, described negative busbar 62 is additionally provided with the first output negative pole 622 and the second output
Negative pole 623, described first output negative pole 622 and described second output negative pole 623 are separately positioned on the both sides of described negative busbar 62
On edge, after described positive busbar 61 and described negative busbar 62 overlapping, described first output cathode 612 and described first output negative pole
On 622 lateral edges being positioned at described three-phase Half-bridge DC busbar 6 and stagger up and down, described second output cathode 613 and described
Second output negative pole 623 is positioned on the opposite side edge of described three-phase Half-bridge DC busbar 6 and staggers up and down.Described second output
Be provided with on positive pole 613 and described second output negative pole 623 connection bending part 8, described connection bending part 8 bending height with
Described second output cathode 613 and the pole piece consistency of thickness of described second output negative pole 623.
The lower edge of described three-phase Half-bridge DC busbar 6 offers and described peak absorbing capacitor 4 number phase
Deng electric capacity window 64.Described peak absorbing capacitor 4 is positioned at described electric capacity window 64 and described peak absorbing capacitor 4
Positive pole is corresponding with the positive pole of described IGBT power device 3 and negative pole respectively with negative pole to be connected, and described direct current support capacitor 7 connects
On described three-phase Half-bridge DC busbar 6.
The present invention compared with prior art, can solve problems with:
1, in the lower edge of three-phase Half-bridge DC busbar, the electric capacity window equal with peak absorbing number of capacitors is offered,
Peak absorbing capacitor be positioned at electric capacity window and the positive pole of peak absorbing capacitor and negative pole respectively with IGBT power device
Positive pole is corresponding with negative pole to be connected；Which solve high-voltage I GBT power device and peak absorbing capacitor hypertelorism, connect big
It is mostly the problem of 90 ° of bendings, decreases the IGBT power device inductance value to peak absorbing capacitor.
2, three-phase Half-bridge DC busbar is vertically arranged on IGBT power device, and direct current support capacitor is connected to three-phase half
On bridge DC master row；Which solving causes plate level to hinder by PCB or line etc. between IGBT power device and direct current support capacitor
Anti-excessive problem.
3, all component of module of the present invention is all fixed by screw, installs or removes extremely convenient, solves power device
Part changes, at internal power module, the problem that accessory difficulty is the most all disassembled.
4, the input positive pole of positive busbar is positioned at the downside of positive busbar and is formed through bending 90 ° by the bottom of positive busbar, negative mother
The input negative pole of row is positioned at the downside of negative busbar and is formed the input pole width of bending by the bottom of negative busbar through bending 90 °
Relatively big with area, big electric current, voltage high-power, big pass through；Solve big electric current between IGBT power device and support capacitor to connect
The problem that wiring/Copper Foil/copper bar is meticulous/thin/narrow.
5, the driver element in the present invention is arranged on cooling system, and the connection with IGBT power device is all by connecting
Foot is directly connected to, it is not necessary to lead-in wire, solves driver element high pressure detection lead-out wire connectivity problem.
6, the first output cathode and the second output cathode, the first output cathode and the second output cathode are set on positive busbar
It is separately positioned on the both sides of the edge of positive busbar, negative busbar arranges the first output negative pole and the second output negative pole, the first output
Negative pole and the second output negative pole are separately positioned on the both sides of the edge of negative busbar, after positive busbar and negative busbar overlapping, and the first output
Positive pole and the first output negative pole are positioned on a lateral edges of three-phase Half-bridge DC busbar and stagger up and down, the second output cathode and
Two output negative poles are positioned on the opposite side edge of three-phase Half-bridge DC busbar and stagger up and down, the second output cathode and the second output
It is respectively provided with connection bending part on negative pole, connects bending height and the second output cathode and the pole piece of the second output negative pole of bending part
Consistency of thickness, for needing the occasion of electric current high-power, big, big voltage output, can carry out module and modules in parallel easily；
Solving high-power output and redesign the problem of power modules, prime power module can be unrestrictedly in parallel, and guarantees parallel connection
Current-sharing.
7, the present invention has accomplished that whole module is installed without line, and module internal any accessory dismounting and change is not related to other and joins
Part, mounts and dismounts all extremely convenients, the most convenient maintaining；This module is standalone module, can be with miscellaneous equipment
Rack is convenient to be installed and dismounting, it is possible to achieve batch production, thus reduces cost.
Present invention can apply to field of electrical equipment.
Claims (9)
1. a current transformer module based on perpendicular dress stack bus bar, including bracing frame (1), cooling system (2), several IGBT merits
Rate device (3), some peak absorbing capacitors (4), driver element (5), three-phase Half-bridge DC busbar (6) and some DC supports
Capacitor (7), it is characterised in that: some described IGBT power devices (3) equidistantly distribute on described cooling system (2), institute
State three-phase Half-bridge DC busbar (6) to be vertically arranged on described IGBT power device (3), described three-phase Half-bridge DC busbar (6)
Positive busbar (61) and negative busbar (62) by overlapping symmetrically form, described positive busbar (61) and described negative busbar (62) it
Between be provided with insulating barrier (63), the input positive pole (611) of described positive busbar (61) and the input negative pole of described negative busbar (62)
(621) respectively corresponding with the positive pole of described IGBT power device (3) and negative pole connect, the positive pole of described IGBT power device (3)
Arrange, in the downside of described three-phase Half-bridge DC busbar (6) in the lateral symmetry of described three-phase Half-bridge DC busbar (6) with negative pole
Offer on edge and described peak absorbing capacitor (4) equal numbers of electric capacity window (64), described peak absorbing capacitor
(4) be positioned at described electric capacity window (64) place and the positive pole of described peak absorbing capacitor (4) and negative pole respectively with described IGBT merit
The positive pole of rate device (3) is corresponding with negative pole to be connected, and some described direct current support capacitors (7) are connected to described three-phase Half-bridge DC
On busbar (6).
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described just
The first output cathode (612) and the second output cathode (613), described first output cathode (612) it is additionally provided with on busbar (61)
With on the both sides of the edge that described second output cathode (613) is separately positioned on described positive busbar (61), on described negative busbar (62)
It is additionally provided with the first output negative pole (622) and the second output negative pole (623), described first output negative pole (622) and described second
Output negative pole (623) is separately positioned on the both sides of the edge of described negative busbar (62), described positive busbar (61) and described negative busbar
(62), after overlapping, it is female that described first output cathode (612) and described first output negative pole (622) are positioned at described three-phase Half-bridge DC
On one lateral edges of row (6) and staggering up and down, described second output cathode (613) and described second output negative pole (623) are positioned at
On the opposite side edge of described three-phase Half-bridge DC busbar (6) and stagger up and down.
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 2, it is characterised in that: described second
Connection bending part (8), described connection bending part (8) it is provided with on output cathode (613) and described second output negative pole (623)
Bending height and described second output cathode (613) and the pole piece consistency of thickness of described second output negative pole (623).
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described positive mother
The input positive pole (611) of row (61) is positioned at the downside of described positive busbar (61) and by the bottom of described positive busbar (61) through bending
90 ° form, and the input negative pole (621) of described negative busbar (62) is positioned at the downside of described negative busbar (62) and by described negative busbar
(62) bottom forms through bending 90 °.
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described insulation
The lower end of layer (63) extends in the groove between positive pole and the negative pole of described IGBT power device (3).
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described IGBT
The number of power device (3) and described peak absorbing capacitor (4) is disposed as three, at described three-phase Half-bridge DC busbar
(6) being provided with three connecting pins (65) on, the adjacent distance between two described connecting pins (65) is equal, three described spikes
Absorption capacitor (4) and three described connecting pins (65) both positive and negative polarity with three described IGBT power devices (3) respectively is connected.
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described support
Frame (1) includes that fore-stock (1a) and after-poppet (1b), described fore-stock (1a) and after-poppet (1b) are vertically arranged in described heat radiation
System (2) goes up and is positioned at the both sides of described three-phase Half-bridge DC busbar (6), also sets on described three-phase Half-bridge DC busbar (6)
Being equipped with some mechanical holes (66), described direct current support capacitor (7) one end is connected on described three-phase Half-bridge DC busbar (6),
The other end is fixing with described after-poppet (1b) to be connected, and sets between described three-phase Half-bridge DC busbar (6) and described fore-stock (1a)
Being equipped with some insulated columns (9), one end of described insulated column (9) is fixing with described mechanical hole (66) to be connected, the other end and described before
Support (1a) is fixing to be connected.
A kind of current transformer module based on perpendicular dress stack bus bar the most according to claim 1, it is characterised in that: described heat radiation
System (2) is fan-cooled radiator, water-cooling type radiator or air-cooled and water-cooling type radiator.
9., according to a kind of based on perpendicular dress stack bus bar the current transformer module described in any one of claim 1 to 8, its feature exists
In: the number of described direct current support capacitor (7) is set to 6, and these 6 direct current support capacitors (7) are evenly distributed on described three
In phase Half-bridge DC busbar (6).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109286304A (en) * | 2018-10-18 | 2019-01-29 | 许继集团有限公司 | Wind electric converter and its stack-type busbar |
| CN110890830A (en) * | 2018-09-07 | 2020-03-17 | 中车株洲电力机车研究所有限公司 | Direct current conversion loop module for high-frequency converter power module |
| CN113179031A (en) * | 2021-04-28 | 2021-07-27 | 北京新能源汽车技术创新中心有限公司 | Integrated dc-to-ac converter direct current supports electric capacity, motor and vehicle |
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| CN201616756U (en) * | 2009-11-27 | 2010-10-27 | 艾默生网络能源有限公司 | Converter power module body device |
| CN202798482U (en) * | 2012-07-25 | 2013-03-13 | 特变电工新疆新能源股份有限公司 | Power module and photovoltaic grid-connected inversion system |
| CN204068683U (en) * | 2014-09-04 | 2014-12-31 | 永济新时速电机电器有限责任公司 | A kind of capacitance group of efficient low sense and install the power cell of this capacitance group |
| CN205666751U (en) * | 2016-05-20 | 2016-10-26 | 珠海九源电力电子科技有限公司 | Converter module based on erect female row of dress stromatolite |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110890830A (en) * | 2018-09-07 | 2020-03-17 | 中车株洲电力机车研究所有限公司 | Direct current conversion loop module for high-frequency converter power module |
| CN109286304A (en) * | 2018-10-18 | 2019-01-29 | 许继集团有限公司 | Wind electric converter and its stack-type busbar |
| CN109286304B (en) * | 2018-10-18 | 2020-07-21 | 许继集团有限公司 | Wind power converter and laminated busbar thereof |
| CN113179031A (en) * | 2021-04-28 | 2021-07-27 | 北京新能源汽车技术创新中心有限公司 | Integrated dc-to-ac converter direct current supports electric capacity, motor and vehicle |
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