CN203056828U - IGBT parallel connection power-unit structure layout - Google Patents

IGBT parallel connection power-unit structure layout Download PDF

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Publication number
CN203056828U
CN203056828U CN 201220748938 CN201220748938U CN203056828U CN 203056828 U CN203056828 U CN 203056828U CN 201220748938 CN201220748938 CN 201220748938 CN 201220748938 U CN201220748938 U CN 201220748938U CN 203056828 U CN203056828 U CN 203056828U
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China
Prior art keywords
igbt
parallel
row
filter capacitor
igbt module
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Expired - Fee Related
Application number
CN 201220748938
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Chinese (zh)
Inventor
焦梓实
林资旭
赵懿
李泽绵
李海东
许洪华
赵斌
赵栋利
武鑫
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BAODING CORONA CONTROL EQUIPMENT Co Ltd
Beijing Corona Science and Technology Co Ltd
Original Assignee
BAODING CORONA CONTROL EQUIPMENT Co Ltd
Beijing Corona Science and Technology Co Ltd
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Priority to CN 201220748938 priority Critical patent/CN203056828U/en
Application granted granted Critical
Publication of CN203056828U publication Critical patent/CN203056828U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

IGBT parallel connection power-unit structure layout is provided. IGBT adaptive plates (10) of an IGBT power unit are covered on IGBT modules (11). The IGBT adaptive plates (10) and the IGBT modules (11) are welded to integrate and are attached on a lower part of a surface of a water cooling plate (15). A plurality of IGBT modules (11) and a plurality of IGBT adaptive plates (10) are opposite in a one-to-one manner and are arranged in parallel. An AC side of every IGBT module (11) is connected with an AC lead-out busbar (5) and a DC side of every IGBT module (11) is connected with a DC busbar (18). A parallel-connection driving plate (7) is mounted on an upper part of the IGBT module (11) and is fixed on the water cooling plate (15) by copper columns (2). A DC filter capacitance assembly (17) is disposed under the DC busbar (18) and is fixed on the water cooling plate (15). Buffer absorption capacitors (1) are attached to a DC side outlet end of the IGBT modules (11).

Description

A kind of IGBT power cell structure layout in parallel
Technical field
The utility model relates to a kind of for the power cell structure layout on the wind electric converter.
Background technology
Along with the development of wind-powered electricity generation industry, the power grade of the power electronic equipment that the wind-powered electricity generation industry is used is more and more higher, and the IGBT parallel technology becomes a kind of emerging raising plant capacity density, the technology of reduction equipment cost.Power cell is as the core component of large-scale power electronic equipment, because its environment for use is special, requires its compact conformation, easy to maintenance and have a very high power density.
Power cell in parallel cooperates the buffering of some to absorb electric capacity and dc filter capacitor composition generally by the parallel connection of a plurality of independently IGBT element again, has following defective:
(1) because the restriction of environment for use, power cell claimed structure compactness, and present parallel IGBT power cell structure is often more open, thereby take bigger space.
(2) along with the raising of plant capacity grade, power density is increasing, and the heat dissipation problem of IGBT is more and more outstanding, and the heating problem of the dc filter capacitor that gets the brush-off at ordinary times also manifests gradually.
(3) along with the lifting of power cell power grade, the voltge surge problem that produces when current unevenness weighing apparatus and stray inductance cause the IGBT switch between the IGBT module that the direct parallel connection of a plurality of IGBT modules causes also occurs thereupon.
The utility model content
The purpose of this utility model is the shortcoming that exists in the structure of the IGBT power cell in parallel that overcomes prior art and the heat dissipation design, and a kind of topology layout of parallel IGBT power cell is provided.
Described parallel IGBT power cell comprises a plurality of IGBT modules, and a plurality of bufferings absorb electric capacity, a plurality of IGBT adaptation boards, and a cooled plate, a drive plate in parallel, the dc filter capacitor assembly, row etc. is drawn in DC master row and interchange, and its topology layout is as follows:
Described IGBT adaptation board is positioned at above the IGBT module, the corresponding IGBT adaptation board of each IGBT module.Capillary on the IGBT module and the welding of the solder joint on the adaptation board, welding back IGBT adaptation board is positioned at directly over the IGBT module.Integrally welded IGBT adaptation board and IGBT module are close to the bottom on cooled plate surface, rely on the bolt overall fixed on cooled plate.A plurality of IGBT modules and a plurality of IGBT adaptation board are one by one after the corresponding welding, be arranged in juxtaposition, be arranged in a row, the interchange side of a plurality of IGBT modules that the interchange row of drawing will be arranged in juxtaposition links together, and the DC side of a plurality of IGBT modules that DC master row will be arranged in juxtaposition links together.Drive plate in parallel is positioned at the top of IGBT module as the common driver plate of IGBT module, relies on copper post support and fixing, and the other end of copper post is fixed on the cooled plate.
The dc filter capacitor assembly comprises dc filter capacitor and structural member thereof, and described structural member covers dc filter capacitor top.Rely on structural member spacing and compress, make dc filter capacitor be close to cooled plate top.Electrical insulating property in order to ensure between dc filter capacitor assembly and the direct current row is coated with insulating paper on dc filter capacitor assembly top.
DC master row is divided into anodal busbar and cathode bus bar, and each anodal busbar and cathode bus bar have DC side and the side two ends of confluxing.Anodal busbar, cathode bus bar are connected on the positive and negative electrode pin of IGBT module DC side, and conflux two pins of side of busbar externally connect.This structure can effectively reduce stray inductance.Be lined with insulating paper between anodal busbar and the cathode bus bar, to guarantee its electric property.
Buffering absorbs the DC side port of export installation that electric capacity is close to the IGBT module, and the distance that buffering is absorbed between electric capacity and the IGBT module DC side is the shortest, can effectively reduce the DC side current fluctuation.
DC master row is pressed on the dc filter capacitor assembly, on the positive pole and negative pole that the anodal busbar of DC master row and cathode bus bar are connected to dc filter capacitor.The anodal busbar of DC master row and the DC side of cathode bus bar are fixed on the dc terminal of IGBT, and the side of confluxing is reserved.
Interchange is drawn row the interchange side of each IGBT module is linked together, and is positioned at the bottom of described power cell, and relies on supporting insulator to support.
Cooled plate be positioned at IGBT module and dc filter capacitor assembly below, become the supporting body of all devices.
Effect of the present utility model:
(1) compact conformation, favorable expandability, it is clear that structure function of the present utility model is divided, convenient disassembly, compact conformation has reduced manufacturing cost.
(2) IGBT module and dc filter capacitor are close to the cooled plate surface, the heat dissipation problem of IGBT module and dc filter capacitor is well solved, improved the reliability of dc filter capacitor, prolonged the life-span of power cell.
(3) this structure has effectively reduced the stray inductance between the dc filter capacitor, has reduced the risk of IGBT module over-voltage breakdown, and has solved the uneven problem of the row's of drawing shunting that exchanges.
Description of drawings
Fig. 1 the utility model power cell overall structure schematic diagram, among the figure: 1 buffering absorbs electric capacity, 2 bronze medal posts, 3 back plates, 4 base plates, 5 exchange the row of drawing, 6 supporting insulators, 7 drive plates in parallel, 8 header boards 4, the 10IGBT adaptation board, 11IGBT module, 12 the 3rd header boards, 13 handles, 14 second header boards, 15 cooled plate, 16 first header boards, 17 dc filter capacitor assemblies, 18 DC master rows;
Fig. 2 dc filter capacitor assembly exploded view is among the figure: 17a sheet metal component, 17b sheet metal component, 17c dc filter capacitor, 17d sheet metal component, 17e insulating paper;
Fig. 3 dc filter capacitor assembly assumption diagram;
Fig. 4 DC master row structural representation, the anodal busbar of 18a, 18b cathode bus bar;
Fig. 5 power cell overall structure schematic diagram;
Fig. 6 exchanges the row's of drawing structural representation;
Fig. 7 cooled plate structural representation.
Embodiment
Further specify the utility model below in conjunction with the drawings and specific embodiments.
The utility model power cell comprises a plurality of IGBT modules 11, and a plurality of bufferings absorb electric capacity 1,15, one drive plates 7 in parallel of 10, cooled plate of a plurality of IGBT adaptation boards, and dc filter capacitor assembly 17, DC master row 18, and exchange the row of drawing 5.
As shown in Figure 1, IGBT adaptation board 10 is covered in above the IGBT module 11, the solder joint firm welding on the capillary on the IGBT module 11 and the IGBT adaptation board 10, the bottom that integrally welded IGBT module 11 and IGBT adaptation board 10 integral body are close to cooled plate 15 surfaces.A plurality of IGBT modules 11 and a plurality of IGBT adaptation board 10 be one by one after the corresponding welding, is arranged in juxtaposition to be in line.The interchange side of each IGBT module 11 connects the interchange row of drawing 5, the direct current side joint DC master row 18 of each IGBT module 11.The anodal busbar of DC master row 18 connects the positive pole of IGBT module 11, and the cathode bus bar of DC master row 18 connects the negative pole of IGBT module 11.Drive plate 7 in parallel is as the triggering drive plate of a plurality of IGBT modules, be positioned at IGBT module 11 after the welding and IGBT adaptation board 10 directly over, it is also fixing to rely on copper post 2 to support, the other end of copper post 2 is fixed on the cooled plate 15.
As Fig. 2, shown in Figure 3, dc filter capacitor assembly 17 is positioned at the below of DC master row 18, comprises dc filter capacitor 17c and structural member thereof.Dc filter capacitor assembly 17 relies on described structural member to be fixed on the cooled plate 15, and makes the bottom of dc filter capacitor 17c be close to the surface of cooled plate 15.The dc filter capacitor 17c other end is connected on the anodal busbar and cathode bus bar of DC master row 18.
For the intensity of the row of drawing 5 that increases exchanges, draw row 5 bottom in interchange supporting insulator has been installed.
As shown in Figure 6, draw row's 5 current-sharings to each IGBT module 11 in order to make realization from interchange, make and exchange the row's of drawing 5 interfaces to current path length basically identical between each IGBT module 11 interchange sides, interchange has horizontal equal chute in the middle of drawing row 5, and the centre that exchanges the row of drawing 5 is stayed in the position of exit.
As Fig. 1 and shown in Figure 5, in order effectively to solve the heat dissipation problem of IGBT module 11 and dc filter capacitor 17c, one end of IGBT module 11 and dc filter capacitor 17 is close on the cooled plate 15, and the other end of dc filter capacitor 17c is connected the DC side of IGBT module 11 by DC master row 18.As shown in Figure 2, in the dc filter capacitor assembly 17, the structural member of dc filter capacitor 17c is one group of sheet metal component 17a, 17b and 17d.Dc filter capacitor 17c passes sheet metal component 17a, relies on sheet metal component 17d to be pressed on the cooled plate 15.Insulating paper 17e is positioned on the sheet metal component 17d; and cover sheet metal component 17 fully; effect is the electric property that guarantees between DC master row and the sheet metal component 17d, and the effect of sheet metal component 17b is the distance that guarantees between sheet metal component 17d and the sheet metal component 17a, and the protection dc filter capacitor can not bear too big pressure.
As shown in Figure 4, DC master row 18 is divided into anodal busbar 18a and cathode bus bar 18b, the DC side of the direct current side joint IGBT module 11 of DC master row 18, the side of confluxing of DC master row 18 is the public direct-current end, the positive pole of public direct-current end and negative pole all have 2 pins to stretch out, even the interlocking of 4 pins that public direct-current is rectified the utmost point and negative pole is distributed in the public direct-current end, and this structure both had been conducive to public direct-current side bearing great current, had effectively reduced the stray inductance of system again.In addition, the direction that the Wiring port of dc filter capacitor 17c is installed along DC master row 18 DC side to the side of confluxing is installed, and is consistent with the flow direction of electric current, and this also is a kind of measure that reduces random thoughts.In addition, press from both sides insulating paper between anodal busbar and cathode bus bar, insulating paper relies on DC master row to be pressed on the dc filter capacitor assembly 17, both can guarantee that the electric property between DC master row 18 positive poles and the negative pole is of compact construction.
As Fig. 1 and shown in Figure 5, IGBT adaptation board 10 of welding on each IGBT module 11, the welding integral of one row IGBT module 11 and IGBT adaptation board 10 is arranged along cooled plate 15 directions, above these row IGBT module 11 and IGBT adaptation board 10 welding integrals, be supported with drive plate 7 in parallel by copper post 2, this structure has effectively reduced the length from drive plate 7 in parallel to line each IGBT adaptation board 10, has reduced extraneous interference.
As Fig. 1 and shown in Figure 5, for the increase of maximum buffering absorbs the effect of electric capacity 1, buffering is absorbed electric capacity 1 be close to the DC side port of export of IGBT module 11 and install.
For the ease of the operation and installation of whole power cell, in the place ahead of described power cell handle 13 has been installed, as shown in Figure 1.
In order to protect cooled plate 15, guard member 8,12,14,16 has been installed as shown in Figure 1.Guard member 8,12,14,16 is arranged from top to bottom, is installed in cooled plate 15 fronts, and has covered the front of whole cooled plate 15.
As shown in Figure 7, the Inlet and outlet water of cooled plate 15 and delivery port are arranged in the side of cooled plate 15, are symmetrically distributed.The installing hole that the front and back of cooled plate 15 leaves symmetry is used for installing device and expansion.
For intensity and convenient installation that guarantees the public busbar of dc terminal, reserved insulator in the upper end of cooled plate 15, in order to fix and support public busbar.

Claims (5)

1. IGBT power cell structure layout in parallel, it is characterized in that, described IGBT power cell in parallel comprises a plurality of IGBT modules (11), a plurality of bufferings absorb electric capacity (1), a plurality of IGBT adaptation boards (10), a cooled plate (15), a drive plate in parallel (7), dc filter capacitor assembly (17), DC master row (18), and exchange the row of drawing (5); The topology layout of described IGBT power cell in parallel is as follows:
IGBT adaptation board (10) is covered in above the IGBT module (11), and is integrally welded with IGBT module (11), is close to the bottom on cooled plate (15) surface; A plurality of IGBT modules (11) and a plurality of IGBT adaptation board (10) are corresponding one by one, are arranged in juxtaposition; The interchange side of each IGBT module (11) connects the interchange row of drawing (5), the direct current side joint DC master row (18) of each IGBT module (11); Drive plate in parallel (7) is positioned at the top of IGBT module (11), is fixed on the cooled plate (15) by copper post (2); Dc filter capacitor assembly (17) is positioned at the below of DC master row (18), is fixed on the cooled plate (15); Buffering absorbs the DC side port of export that electric capacity (1) is close to IGBT module (11).
2. according to the described IGBT of claim 1 power cell structure layout in parallel, it is characterized in that, described dc filter capacitor assembly (17) comprises dc filter capacitor (17c) and structural member thereof, and described structural member covers dc filter capacitor (17c) top; The bottom of dc filter capacitor (17c) is close to the surface of cooled plate (15); The other end of dc filter capacitor (17c) is connected the DC side of IGBT module (11) by DC master row (18).
3. according to the described IGBT of claim 1 power cell structure layout in parallel, it is characterized in that described interchange has horizontal equal chute in the middle of drawing row (5), exchange the centre that is positioned at the interchange row of drawing (5) of the exit of the row of drawing (5).
4. according to the described IGBT of claim 1 power cell structure layout in parallel, it is characterized in that, the DC side of the direct current side joint IGBT module (11) of described DC master row (18), the side of confluxing of DC master row (18) is the public direct-current end; The anodal busbar of DC master row (18) connects the positive pole of IGBT module (11), and the cathode bus bar of DC master row (18) connects the negative pole of IGBT module (11); Accompany insulating paper (17e) between anodal busbar and the cathode bus bar, insulating paper (17e) relies on DC master row (18) to be pressed on the dc filter capacitor assembly (17).
5. according to the described IGBT of claim 1 power cell structure layout in parallel, it is characterized in that, described drive plate in parallel (7) be positioned at IGBT module (11) after the welding and IGBT adaptation board (10) directly over, and pass through copper post (2) support fixation.
CN 201220748938 2012-12-30 2012-12-30 IGBT parallel connection power-unit structure layout Expired - Fee Related CN203056828U (en)

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Application Number Priority Date Filing Date Title
CN 201220748938 CN203056828U (en) 2012-12-30 2012-12-30 IGBT parallel connection power-unit structure layout

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Application Number Priority Date Filing Date Title
CN 201220748938 CN203056828U (en) 2012-12-30 2012-12-30 IGBT parallel connection power-unit structure layout

Publications (1)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956885A (en) * 2014-04-24 2014-07-30 江苏大全箱变科技有限公司 Compact power unit of wind power converter
CN104660016A (en) * 2015-01-16 2015-05-27 浙江海得新能源有限公司 Power system structure
CN105281152A (en) * 2014-06-20 2016-01-27 深圳中德世纪新能源有限公司 IGBT parallel busbar
CN113422565A (en) * 2020-03-02 2021-09-21 北京新能源汽车股份有限公司 Motor controller and electric vehicle with same
CN113571975A (en) * 2021-07-22 2021-10-29 阳光电源股份有限公司 Copper bar assembly and electronic equipment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103956885A (en) * 2014-04-24 2014-07-30 江苏大全箱变科技有限公司 Compact power unit of wind power converter
CN105281152A (en) * 2014-06-20 2016-01-27 深圳中德世纪新能源有限公司 IGBT parallel busbar
CN104660016A (en) * 2015-01-16 2015-05-27 浙江海得新能源有限公司 Power system structure
CN113422565A (en) * 2020-03-02 2021-09-21 北京新能源汽车股份有限公司 Motor controller and electric vehicle with same
CN113571975A (en) * 2021-07-22 2021-10-29 阳光电源股份有限公司 Copper bar assembly and electronic equipment

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130710

Termination date: 20201230

CF01 Termination of patent right due to non-payment of annual fee