CN106130022B - A kind of mixing APF topological structure and generalized inverse decoupling controller containing striding capacitance - Google Patents
A kind of mixing APF topological structure and generalized inverse decoupling controller containing striding capacitance Download PDFInfo
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- CN106130022B CN106130022B CN201610668059.7A CN201610668059A CN106130022B CN 106130022 B CN106130022 B CN 106130022B CN 201610668059 A CN201610668059 A CN 201610668059A CN 106130022 B CN106130022 B CN 106130022B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/01—Arrangements for reducing harmonics or ripples
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/18—Arrangements for adjusting, eliminating or compensating reactive power in networks
- H02J3/1821—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators
- H02J3/1835—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control
- H02J3/1842—Arrangements for adjusting, eliminating or compensating reactive power in networks using shunt compensators with stepless control wherein at least one reactive element is actively controlled by a bridge converter, e.g. active filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/20—Active power filtering [APF]
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- Power Engineering (AREA)
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Abstract
The invention discloses a kind of mixing APF topological structure and generalized inverse decoupling controller containing striding capacitance.Compared with traditional APF, this structure can reduce main circuit switch frequency, and the three-level inverter of use is more suitable for the occasion that high-pressure system takes into account large capacity reactive compensation and dynamic harmonic.And design generalized inverse decoupling controller make complex nonlinear characteristic hybrid active electric filter pole in complex plane reasonable disposition, reach expected decoupling effect.Mixed active electric power filter topological circuit containing striding capacitance, including insulated gate bipolar transistor Sa1、Sa2、Sa3、Sa4, insulated gate bipolar transistor Sb1、Sb2、Sb3、Sb4, insulated gate bipolar transistor Sc1、Sc2、Sc3、Sc4, inverse parallel freewheeling diode Va1、Va2、Va3、Va4, inverse parallel freewheeling diode Vb1Vb2、Vb3、Vb4, inverse parallel freewheeling diode Vc1、Vc2、Vc3、Vc4.To improve the robustness and entire compensation performance of complex nonlinear mixed active electric power filter.
Description
Technical field
The present invention relates to electric filtering fields, and in particular, to one kind contains striding capacitance structure and traditional LC filter
Hybrid active electric filter topological circuit and generalized inverse decoupling controller in parallel.
Background technique
Electronic device generates a large amount of harmonic wave and drastically influences power quality always in electric system in recent years, it is therefore desirable to
A kind of device is filtered to power grid and compensating power.Passive filter is sometimes at low cost, but route changes, and branch increases
Power system impedance value deviation caused by adding etc. can all seriously affect compensation effect, and the Active Power Filter-APF of exclusive use can be with
It is used in the non-linear occasion of low capacity, but just less feasible in large capacity occasion.Even mixed active electric power filters
Although device has been connected capacitor, the capacity of APF has been greatly reduced, but there is still a need for the PWM converters of a high bandwidth as APF, this
It is made to be only applicable to target compensation in intermediate size hereinafter, not also being suitable for large capacity again.However, this topological structure and tradition
Active Power Filter-APF it is the same, this topological structure compensation three-phase current between there is close coupling relationships to make practical compensation
Electric current and command signal generate error, so that load compensation effect be made to be severely impacted, it is therefore desirable to topological structure into
Row decoupling control.In the design of controller, existing parsing inverse system is largely dependent upon the mathematical models of system,
System pole can not be arbitrarily configured at any time.
Summary of the invention
It is an object of the present invention in view of the above-mentioned problems, propose one kind containing striding capacitance structure and traditional LC filter
Hybrid active electric filter topological circuit and generalized inverse decoupling controller in parallel improves complex nonlinear mixing to realize
The advantages of robustness and entire compensation performance of type Active Power Filter-APF.
To achieve the above object, the technical solution adopted by the present invention is that:
A kind of mixed active electric power filter topological circuit of the structure containing striding capacitance, including insulated gate bipolar transistor
Sa1, insulated gate bipolar transistor Sa2, insulated gate bipolar transistor Sa3, insulated gate bipolar transistor Sa4, insulated gate bipolar transistor
Sb1, insulated gate bipolar transistor Sb2, insulated gate bipolar transistor Sb3, insulated gate bipolar transistor Sb4, insulated gate bipolar transistor
Sc1, insulated gate bipolar transistor Sc2, insulated gate bipolar transistor Sc3, insulated gate bipolar transistor Sc4, capacitor Ca, inductance La, electricity
Hold Cb, inductance Lb, capacitor Cc, inductance Lc, inverse parallel freewheeling diode Va1, inverse parallel freewheeling diode Va2, two pole of inverse parallel afterflow
Pipe Va3, inverse parallel freewheeling diode Va4, inverse parallel freewheeling diode Vb1, inverse parallel freewheeling diode Vb2, two pole of inverse parallel afterflow
Pipe Vb3, inverse parallel freewheeling diode Vb4, inverse parallel freewheeling diode Vc1, inverse parallel freewheeling diode Vc2, two pole of inverse parallel afterflow
Pipe Vc3, inverse parallel freewheeling diode Vc4, capacitor C1, capacitor C2, capacitor Cf1, capacitor Cf2With capacitor Cf3,
The capacitor CaWith inductance LaIt is connected between a phase of three-phase nonlinear load and ground, the capacitor CbWith inductance Lb
It is connected between the b phase of three-phase nonlinear load and ground, the capacitor CcWith inductance LcIt is connected on the c phase of three-phase nonlinear load
Between ground；
The insulated gate bipolar transistor Sa1Collector and insulated gate bipolar transistor Sa4Emitter between series electrical
Hold C1With capacitor C2, the insulated gate bipolar transistor Sa1Emitter and insulated gate bipolar transistor Sa2Collector connection,
The insulated gate bipolar transistor Sa2Emitter and insulated gate bipolar transistor Sa3Collector connection, the insulated gate is double
Gated transistors Sa3Emitter and insulated gate bipolar transistor Sa4Collector connection, the insulated gate bipolar transistor Sa2's
Series inductance L between emitter and a phase of three-phase nonlinear loadf1, the insulated gate bipolar transistor Sa1Emitter and absolutely
Edge grid bipolar transistor Sa4Collector between series capacitance Cf1, the insulated gate bipolar transistor Sa1Collector and transmitting
Connect inverse parallel freewheeling diode V between polea1, the inverse parallel freewheeling diode Va1Anode and insulated gate bipolar transistor
Sa1Emitter connection, the insulated gate bipolar transistor Sa2Collector and emitter between connect two pole of inverse parallel afterflow
Pipe Va2, the inverse parallel freewheeling diode Va2Anode and insulated gate bipolar transistor Sa2Emitter connection, the insulated gate
Bipolar transistor Sa3Collector and emitter between connect inverse parallel freewheeling diode Va3, the inverse parallel freewheeling diode
Va3Anode and insulated gate bipolar transistor Sa3Emitter connection, the insulated gate bipolar transistor Sa4Collector and hair
Connect inverse parallel freewheeling diode V between emitter-base bandgap gradinga4, the inverse parallel freewheeling diode Va4Anode and insulated gate bipolar transistor
Pipe Sa4Emitter connection；
The insulated gate bipolar transistor Sb1Emitter and insulated gate bipolar transistor Sb2Collector connection, it is described
Insulated gate bipolar transistor Sb2Emitter and insulated gate bipolar transistor Sb3Collector connection, the insulated gate bipolar is brilliant
Body pipe Sb3Emitter and insulated gate bipolar transistor Sb4Collector connection, the insulated gate bipolar transistor Sb2Transmitting
Series inductance L between pole and the b phase of three-phase nonlinear loadf2, the insulated gate bipolar transistor Sb1Emitter and insulated gate
Bipolar transistor Sb4Collector between series capacitance Cf2, the insulated gate bipolar transistor Sb1Collector and emitter it
Between connect inverse parallel freewheeling diode Vb1, the inverse parallel freewheeling diode Vb1Anode and insulated gate bipolar transistor Sb1's
Emitter connection, the insulated gate bipolar transistor Sb2Collector and emitter between connect inverse parallel freewheeling diode Vb2,
The inverse parallel freewheeling diode Vb2Anode and insulated gate bipolar transistor Sb2Emitter connection, the insulated gate bipolar
Transistor Sb3Collector and emitter between connect inverse parallel freewheeling diode Vb3, the inverse parallel freewheeling diode Vb3's
Anode and insulated gate bipolar transistor Sb3Emitter connection, the insulated gate bipolar transistor Sb4Collector and emitter
Between connect inverse parallel freewheeling diode Vb4, the inverse parallel freewheeling diode Vb4Anode and insulated gate bipolar transistor Sb4
Emitter connection；
The insulated gate bipolar transistor Sc1Emitter and insulated gate bipolar transistor Sc2Collector connection, it is described
Insulated gate bipolar transistor Sc2Emitter and insulated gate bipolar transistor Sc3Collector connection, the insulated gate bipolar is brilliant
Body pipe Sc3Emitter and insulated gate bipolar transistor Sc4Collector connection, the insulated gate bipolar transistor Sc2Transmitting
Series inductance L between pole and the c phase of three-phase nonlinear loadf3, the insulated gate bipolar transistor Sc1Emitter and insulated gate
Bipolar transistor Sc4Collector between series capacitance Cf3, the insulated gate bipolar transistor Sc1Collector and emitter it
Between connect inverse parallel freewheeling diode Vc1, the inverse parallel freewheeling diode Vc1Anode and insulated gate bipolar transistor Sc1's
Emitter connection, the insulated gate bipolar transistor Sc2Collector and emitter between connect inverse parallel freewheeling diode Vc2,
The inverse parallel freewheeling diode Vc2Anode and insulated gate bipolar transistor Sc2Emitter connection, the insulated gate bipolar
Transistor Sc3Collector and emitter between connect inverse parallel freewheeling diode Vc3, the inverse parallel freewheeling diode Vc3's
Anode and insulated gate bipolar transistor Sc3Emitter connection, the insulated gate bipolar transistor Sc4Collector and emitter
Between connect inverse parallel freewheeling diode Vc4, the inverse parallel freewheeling diode Vc4Anode and insulated gate bipolar transistor Sc4
Emitter connection.
Technical solution of the present invention has the advantages that
Technical solution of the present invention, on the basis of existing active power filter structure design striding capacitance single-phase bridge with
The advantages of hybrid active electric filter topological circuit of passive LC filter parallel connection, striding capacitance single-phase bridge, is as follows: 1. switches
Pipe loss is small, and loss distribution hooks, and can reduce the switching frequency of main circuit；2. inverter level number is easier to expand, fit
It is more to close occasion, facilitates selection；3. being simple and efficient for the control of active and reactive power flow, it is more suitable for high-pressure system and takes into account
The occasion of large capacity reactive compensation and dynamic harmonic.
The LC filter main compensation in parallel with striding capacitance single-phase bridge is equivalent to a high-pass filtering compared with the harmonic wave of high order
Device, harmonic wave on the one hand it is used to eliminate in compensation electric current because of main circuit device on-off caused by, on the other hand compensation is humorous compared with high order
Wave, so that the switching frequency of APF main circuit device be made to decrease.
A kind of generalized inverse decoupling controller is also disclosed simultaneously, the practical compensation electric current of (as shown in Figure 5) three-phase striding capacitance point
It Wei not if1, if2, if3, the practical compensation electric current of passive filter is respectively ik1, ik2, ik3, respectively by the three-phase striding capacitance of every phase
Practical compensation electric current sums to obtain every mutually practical compensation electric current with the practical compensation electric current of passive filter, by the practical compensation electricity of every phase
Stream passes through abc-dq0 coordinate transform, and the practical compensation electric current of three-phase is converted to the practical compensation electric current i of two-phased, iq；
Again by obtaining theoretic load current to load-side three-phase current detection, equally to theoretic load current
Diphase theory compensation electric current is obtained by abc-dq0 coordinate transform；
Then the fundamental current of every phase is obtained by low-pass filter, then made the difference with former load current to get to theoretically
Two-phase needs to compensate electric current id *, iq *；DC capacitor voltage Ud1 and Ud2 setting value are made the difference with actual value, controlled by PI
Reduce error, difference is just compensated into id *Before；
Diphase theory compensation electric current and practical compensation electric current are made the difference, then compensation current error is reduced by PI controller,
Again by broad sense Adverse control, generalized inverse parameter a11, a21 connect with integral element, generalized inverse parameter a10, a20 and integral element,
Generalized inverse parameter a11, a21 form algebraic loop negative-feedback to generalized inverse input；
The filter model that three level Generalized Inverse Methods are derived, the table of reverse-direction derivation PDPWM switching coefficient U1, U2 and U3
Up to formula, by expression formula Cascade System before the parallel-connection structure filter system of striding capacitance and passive filter, so that two systems
The compound pseudo-linear system Linearized Decoupling of composition completes decoupling control so that two-phase output is mutually indepedent unrelated；Most
Afterwards, two-phase output is obtained into the compensation electric current of every phase by dq0-abc inverse transformation.
Compared with traditional parsing reversed decoupling control, generalized inverse decoupling control is not only able to achieve the linearisation and solution of original system
Coupling, and by reasonably adjusting generalized inverse parameter alpha 0, α 1, α 2, α n ... can be such that complex nonlinear mixed active electric power filters
The unstable subsystem of integral form is changed into stable subsystem to realize by the pole of wave device reasonable disposition in complex plane
It is handled with the depression of order to High Order Nonlinear System, to obtain expected decoupling control.
Below by drawings and examples, technical scheme of the present invention will be described in further detail.
Detailed description of the invention
Fig. 1 is the hybrid active electric filter topological circuit containing striding capacitance structure described in the embodiment of the present invention
Electronic circuitry；
Fig. 2 is striding capacitance single-phase bridge structure chart；
Fig. 3 is striding capacitance three-level inverter output voltage and switch state figure；
Fig. 4 is the mixed active electric power filter Generalized Inverse System decoupling-structure schematic diagram containing striding capacitance structure；
Fig. 5 is striding capacitance and LC filter Shunt generalized inverse PI control principle drawing；
Fig. 6 is that three level striding capacitance PDPWM send out period schematic diagram；
Fig. 7 is three level striding capacitance inverter PDPWM method period schematic diagrames.
Specific embodiment
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings, it should be understood that preferred reality described herein
Apply example only for the purpose of illustrating and explaining the present invention and is not intended to limit the present invention.
As shown in Figure 1, a kind of mixed active electric power filter topological circuit containing striding capacitance structure, including insulation
Grid bipolar transistor Sa1, insulated gate bipolar transistor Sa2, insulated gate bipolar transistor Sa3, insulated gate bipolar transistor Sa4, insulation
Grid bipolar transistor Sb1, insulated gate bipolar transistor Sb2, insulated gate bipolar transistor Sb3, insulated gate bipolar transistor Sb4, insulation
Grid bipolar transistor Sc1, insulated gate bipolar transistor Sc2, insulated gate bipolar transistor Sc3, insulated gate bipolar transistor Sc4, capacitor
Ca, inductance La, capacitor Cb, inductance Lb, capacitor Cc, inductance Lc, inverse parallel freewheeling diode Va1, inverse parallel freewheeling diode Va2, it is anti-
Freewheeling diode V in parallela3, inverse parallel freewheeling diode Va4, inverse parallel freewheeling diode Vb1, inverse parallel freewheeling diode Vb2, it is anti-
Freewheeling diode V in parallelb3, inverse parallel freewheeling diode Vb4, inverse parallel freewheeling diode Vc1, inverse parallel freewheeling diode Vc2, it is anti-
Freewheeling diode V in parallelc3, inverse parallel freewheeling diode Vc4, capacitor C1, capacitor C2, capacitor Cf1, capacitor Cf2With capacitor Cf3,
Capacitor CaWith inductance LaIt is connected between a phase of three-phase nonlinear load and ground, capacitor CbWith inductance LbIt is connected on three
Between the b phase and ground of phase nonlinear load, capacitor CcWith inductance LcIt is connected between the c phase of three-phase nonlinear load and ground；
Insulated gate bipolar transistor Sa1Collector and insulated gate bipolar transistor Sa4Emitter between series capacitance C1
With capacitor C2, insulated gate bipolar transistor Sa1Emitter and insulated gate bipolar transistor Sa2Collector connection, insulated gate is double
Gated transistors Sa2Emitter and insulated gate bipolar transistor Sa3Collector connection, insulated gate bipolar transistor Sa3Transmitting
Pole and insulated gate bipolar transistor Sa4Collector connection, insulated gate bipolar transistor Sa2Emitter and three-phase it is non-linear negative
Series inductance L between a phase of loadf1, insulated gate bipolar transistor Sa1Emitter and insulated gate bipolar transistor Sa4Collector
Between series capacitance Cf1, insulated gate bipolar transistor Sa1Collector and emitter between connect inverse parallel freewheeling diode Va1,
Inverse parallel freewheeling diode Va1Anode and insulated gate bipolar transistor Sa1Emitter connection, insulated gate bipolar transistor Sa2
Collector and emitter between connect inverse parallel freewheeling diode Va2, inverse parallel freewheeling diode Va2Anode and insulated gate
Bipolar transistor Sa2Emitter connection, insulated gate bipolar transistor Sa3Collector and emitter between inverse parallel of connecting it is continuous
Flow diode Va3, inverse parallel freewheeling diode Va3Anode and insulated gate bipolar transistor Sa3Emitter connection, insulated gate is double
Gated transistors Sa4Collector and emitter between connect inverse parallel freewheeling diode Va4, inverse parallel freewheeling diode Va4Sun
Pole and insulated gate bipolar transistor Sa4Emitter connection；
Insulated gate bipolar transistor Sb1Emitter and insulated gate bipolar transistor Sb2Collector connection, insulated gate is double
Gated transistors Sb2Emitter and insulated gate bipolar transistor Sb3Collector connection, insulated gate bipolar transistor Sb3Transmitting
Pole and insulated gate bipolar transistor Sb4Collector connection, insulated gate bipolar transistor Sb2Emitter and three-phase it is non-linear negative
Series inductance L between the b phase of loadf2, insulated gate bipolar transistor Sb1Emitter and insulated gate bipolar transistor Sb4Collector
Between series capacitance Cf2, insulated gate bipolar transistor Sb1Collector and emitter between connect inverse parallel freewheeling diode Vb1,
Inverse parallel freewheeling diode Vb1Anode and insulated gate bipolar transistor Sb1Emitter connection, insulated gate bipolar transistor Sb2
Collector and emitter between connect inverse parallel freewheeling diode Vb2, inverse parallel freewheeling diode Vb2Anode and insulated gate
Bipolar transistor Sb2Emitter connection, insulated gate bipolar transistor Sb3Collector and emitter between inverse parallel of connecting it is continuous
Flow diode Vb3, inverse parallel freewheeling diode Vb3Anode and insulated gate bipolar transistor Sb3Emitter connection, insulated gate is double
Gated transistors Sb4Collector and emitter between connect inverse parallel freewheeling diode Vb4, inverse parallel freewheeling diode Vb4Sun
Pole and insulated gate bipolar transistor Sb4Emitter connection；
Insulated gate bipolar transistor Sc1Emitter and insulated gate bipolar transistor Sc2Collector connection, insulated gate is double
Gated transistors Sc2Emitter and insulated gate bipolar transistor Sc3Collector connection, insulated gate bipolar transistor Sc3Transmitting
Pole and insulated gate bipolar transistor Sc4Collector connection, insulated gate bipolar transistor Sc2Emitter and three-phase it is non-linear negative
Series inductance L between the c phase of loadf3, insulated gate bipolar transistor Sc1Emitter and insulated gate bipolar transistor Sc4Collector
Between series capacitance Cf3, insulated gate bipolar transistor Sc1Collector and emitter between connect inverse parallel freewheeling diode Vc1,
Inverse parallel freewheeling diode Vc1Anode and insulated gate bipolar transistor Sc1Emitter connection, insulated gate bipolar transistor Sc2
Collector and emitter between connect inverse parallel freewheeling diode Vc2, inverse parallel freewheeling diode Vc2Anode and insulated gate
Bipolar transistor Sc2Emitter connection, insulated gate bipolar transistor Sc3Collector and emitter between inverse parallel of connecting it is continuous
Flow diode Vc3, inverse parallel freewheeling diode Vc3Anode and insulated gate bipolar transistor Sc3Emitter connection, insulated gate is double
Gated transistors Sc4Collector and emitter between connect inverse parallel freewheeling diode Vc4, inverse parallel freewheeling diode Vc4Sun
Pole and insulated gate bipolar transistor Sc4Emitter connection.
Striding capacitance single-phase bridge is as shown in Fig. 2, striding capacitance single-phase bridge is made in DC side by using clamp capacitor
Property point can be connected with the midpoint of two switching tubes of each bridge arm, such topological structure insulated gate bipolar transistor Sa1And insulation
Grid bipolar transistor Sa4Complementary duty, insulated gate bipolar transistor Sa2With insulated gate bipolar transistor Sa3Complementary duty, inverse parallel
Freewheeling diode Va1~inverse parallel freewheeling diode Va4For differential concatenation inverse parallel freewheeling diode, capacitor C1With capacitor C2It is straight
Bus capacitor is flowed, system zero potential is provided；Capacitor Cf1, capacitor Cf2With capacitor Cf3For striding capacitance, PWM is laminated in conventional carrier
Method cannot balance striding capacitance voltage, so this structure needs to obtain using more level PWM control algolithms to compensate electric current.Fly across
Capacity type inverter working condition is as shown in figure 3, include " 1 ", " 0 " and " -1 " three kinds of level states, wherein zero level state is divided
For " 0+ " and " 0- " two states, respectively indicates and striding capacitance is charged and discharged.
The technical program proposition designs decoupling controller with generalized inverse, and traditional parsing inverse system relies heavily on
In the mathematical models of system, system pole can not be arbitrarily configured at any time.In order to solve this problem, it improves and obtains generalized inverse
System decoupling introduces feedback node, so that it may incite somebody to action entire compound pseudo-linear system arbitrary POLE PLACEMENT USING at any time, be beneficial to close
Ring controller design cooperation is to improve system robustness.Inverse system is that α rank integral inverse system input ψ is added in series connection before original system
Export y relationship be ψ=y ', generalized inverse output be then ψ=α 0yd+ α 1yd '+α 2yd (2)+... α nyd (n) obviously, generalized inverse
The more many parameters of the puppet that system and original system are constituted linear composite system, are not only able to achieve the linearisation and decoupling of original system,
And by reasonably adjusting generalized inverse parameter alpha 0, α 1, α 2, α n ... can be such that the hybrid active electric of complex nonlinear characteristic filters
The unstable subsystem of integral form is changed into stable subsystem to realize by wave device system pole reasonable disposition in complex plane
It unites and the depression of order of High Order Nonlinear System is handled, to obtain expected decoupling control, as shown in Figure 4.Fig. 5 is generalized inverse PI
Controller design schematic diagram.
The technical program proposes a kind of improved method suitable for striding capacitance type multi-electrical level inverter PDPWM, passes through
Increase zero level and select link, reasonable distribution zero level vector can balance striding capacitance voltage and relatively easy, application well
Flexibly.It is as shown in Figure 6 and Figure 7 the three level carrier figures of PDPWM.Its basic ideas is that modulating wave is controlled compared with upper layer carrier
A pair of switches processed turns on and off (two switch complementary work), and same modulating wave controls another split compared with lower layer's carrier wave
What is closed turns on and off.
The generalized inverse decoupling controller of hybrid active electric filter topological circuit is as shown in figure 5, three-phase striding capacitance is real
It is respectively i that border, which compensates electric current,f1, if2, if3, the practical compensation electric current of passive filter is respectively ik1, ik2, ik3, respectively by every phase
The practical compensation electric current of three-phase striding capacitance sums to obtain every mutually practical compensation electric current with the practical compensation electric current of passive filter, will be every
Mutually by abc-dq0 coordinate transform, (in order to simplify circuit analysis, essence is the phase of a square matrix and diagonal matrix to practical compensation electric current
Like transformation), the practical compensation electric current of three-phase is converted to the practical compensation electric current i of two-phased, iq.By being examined to load-side three-phase current
Theoretic load current is measured, abc-dq0 coordinate transform is also passed through and obtains diphase theory compensation electric current.Pass through low pass filtered
Wave device obtains the fundamental current of every phase, then makes the difference with former load current and need to compensate electric current i to get to theoretical two-phased *, iq *.It will
DC capacitor voltage Ud1, Ud2 setting value makes the difference with actual value, controls by PI and reduces error, difference is just compensated id *
Before.Diphase theory compensation electric current and practical compensation electric current are made the difference, then compensation current error is reduced by PI controller, then pass through
Broad sense Adverse control, generalized inverse parameter a11, a21 connect with integral element, generalized inverse parameter a10, a20 and integral element, generalized inverse
Parameter a11, a21 form algebraic loop negative-feedback to generalized inverse input.The filter model that three level Generalized Inverse Methods are pushed over, instead
To the expression formula for deriving PDPWM switching coefficient U1, U2, U3, by expression formula Cascade System in striding capacitance and passive filter
Before parallel-connection structure filter system, the compound pseudo-linear system Linearized Decoupling that two systems can be made to form, so that two
Mutually export mutually indepedent unrelated, completion decoupling control.Finally, two-phase output is obtained the benefit of every phase by dq0-abc inverse transformation
Repay electric current.
Specific control process is as follows:
1, first to load current i1It is sampled, electric current i is compensated to striding capacitancefAnd LC filter compensation current ikInto
Row sampling, and detect DC voltage value U1, U2.Establish the striding capacitance bridge topological structure in parallel with traditional LC filter.
2, by carrying out abc-dq0 transformation to load current, and fundamental current is obtained by low-pass filter, thus into one
Step obtains the harmonic current for needing to compensate.
3, the deviation for the current offset values and practical offset for obtaining theory carries out PI control, and two capacitor of DC side uses
Identical parameter, and voltage predetermined value is reached by PI control.
4, reversibility Analysis is carried out to system, it was demonstrated that the invertibity of system.
5, before designing Generalized Inverse System and being connected on original system, and by design broad sense inverse controller second order non-linear
Property system decoupling at two single order pseudo-linear systems, adjust generalized inverse device parameter a11, a10, a21, a20 make be after decoupling
System pole obtains reasonable disposition.
6, duty cycle functions decoupling obtained carry out dq0-abc transformation, and use PWM modulation, and striding capacitance bridge is using three
Level PDPWM (PWM is laminated in carrier wave) modulation, increases by 0 level compared with traditional PWM modulation.Its basic ideas is, modulating wave with it is upper
Layer carrier wave compares control the turning on and off of a pair of switches (two switch complementaries work), and same modulating wave is compared with lower layer's carrier wave
Control another pair switch turns on and off.
7, the compensation of electric current will be realized on obtained compensation current parallel to power grid.
Finally, it should be noted that the foregoing is only a preferred embodiment of the present invention, it is not intended to restrict the invention,
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features.
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in of the invention
Within protection scope.
Claims (1)
1. a kind of generalized inverse decoupling controller of the mixing APF topological structure containing striding capacitance, which is characterized in that including insulated gate
Bipolar transistor Sa1, insulated gate bipolar transistor Sa2, insulated gate bipolar transistor Sa3, insulated gate bipolar transistor Sa4, insulated gate
Bipolar transistor Sb1, insulated gate bipolar transistor Sb2, insulated gate bipolar transistor Sb3, insulated gate bipolar transistor Sb4, insulated gate
Bipolar transistor Sc1, insulated gate bipolar transistor Sc2, insulated gate bipolar transistor Sc3, insulated gate bipolar transistor Sc4, capacitor
Ca, inductance La, capacitor Cb, inductance Lb, capacitor Cc, inductance Lc, inverse parallel freewheeling diode Va1, inverse parallel freewheeling diode Va2, it is anti-
Freewheeling diode V in parallela3, inverse parallel freewheeling diode Va4, inverse parallel freewheeling diode Vb1, inverse parallel freewheeling diode Vb2, it is anti-
Freewheeling diode V in parallelb3, inverse parallel freewheeling diode Vb4, inverse parallel freewheeling diode Vc1, inverse parallel freewheeling diode Vc2, it is anti-
Freewheeling diode V in parallelc3, inverse parallel freewheeling diode Vc4, capacitor C1, capacitor C2, capacitor Cf1, capacitor Cf2With capacitor Cf3,
The capacitor CaWith inductance LaIt is connected between a phase of three-phase nonlinear load and ground, the capacitor CbWith inductance LbSeries connection
Between the b phase and ground of three-phase nonlinear load, the capacitor CcWith inductance LcIt is connected on the c phase and ground of three-phase nonlinear load
Between；
The insulated gate bipolar transistor Sa1Drains collectors and insulated gate bipolar transistor Sa4Source emitter pole between go here and there
Join capacitor C1With capacitor C2, the insulated gate bipolar transistor Sa1Source emitter pole and insulated gate bipolar transistor Sa2Drain electrode
Collector connection, the insulated gate bipolar transistor Sa2Source emitter pole and insulated gate bipolar transistor Sa3Drain electrode current collection
Pole connection, the insulated gate bipolar transistor Sa3Source emitter pole and insulated gate bipolar transistor Sa4Drains collectors connect
It connects, the insulated gate bipolar transistor Sa2Source emitter pole and the c phase of three-phase nonlinear load between series inductance Lf1, institute
State insulated gate bipolar transistor Sa1Source emitter pole and insulated gate bipolar transistor Sa4Drains collectors between series capacitance
Cf1, the insulated gate bipolar transistor Sa1Drains collectors and source emitter pole between connect inverse parallel freewheeling diode Va1,
The inverse parallel freewheeling diode Va1Anode and insulated gate bipolar transistor Sa1Source emitter pole connection, the insulated gate
Bipolar transistor Sa2Drains collectors and source emitter pole between connect inverse parallel freewheeling diode Va2, the inverse parallel is continuous
Flow diode Va2Anode and insulated gate bipolar transistor Sa2Source emitter pole connection, the insulated gate bipolar transistor Sa3
Drains collectors and source emitter pole between connect inverse parallel freewheeling diode Va3, the inverse parallel freewheeling diode Va3's
Anode and insulated gate bipolar transistor Sa3Source emitter pole connection, the insulated gate bipolar transistor Sa4Drains collectors
Connect inverse parallel freewheeling diode V between source emitter polea4, the inverse parallel freewheeling diode Va4Anode and insulated gate
Bipolar transistor Sa4Source emitter pole connection；
The insulated gate bipolar transistor Sb1Emitter and insulated gate bipolar transistor Sb2Collector connection, the insulated gate
Bipolar transistor Sb2Emitter and insulated gate bipolar transistor Sb3Collector connection, the insulated gate bipolar transistor Sb3
Emitter and insulated gate bipolar transistor Sb4Collector connection, the insulated gate bipolar transistor Sb2Emitter and three
Series inductance L between the b phase of phase nonlinear loadf2, the insulated gate bipolar transistor Sb1Emitter and insulated gate bipolar it is brilliant
Body pipe Sb4Collector between series capacitance Cf2, the insulated gate bipolar transistor Sb1Collector and emitter between connect
Inverse parallel freewheeling diode Vb1, the inverse parallel freewheeling diode Vb1Anode and insulated gate bipolar transistor Sb1Emitter
Connection, the insulated gate bipolar transistor Sb2Collector and emitter between connect inverse parallel freewheeling diode Vb2, described anti-
Freewheeling diode V in parallelb2Anode and insulated gate bipolar transistor Sb2Emitter connection, the insulated gate bipolar transistor
Sb3Collector and emitter between connect inverse parallel freewheeling diode Vb3, the inverse parallel freewheeling diode Vb3Anode with
Insulated gate bipolar transistor Sb3Emitter connection, the insulated gate bipolar transistor Sb4Collector and emitter between go here and there
Join inverse parallel freewheeling diode Vb4, the inverse parallel freewheeling diode Vb4Anode and insulated gate bipolar transistor Sb4Transmitting
Pole connection；
The insulated gate bipolar transistor Sc1Emitter and insulated gate bipolar transistor Sc2Collector connection, the insulated gate
Bipolar transistor Sc2Emitter and insulated gate bipolar transistor Sc3Collector connection, the insulated gate bipolar transistor Sc3
Emitter and insulated gate bipolar transistor Sc4Collector connection, the insulated gate bipolar transistor Sc2Emitter and three
Series inductance L between a phase of phase nonlinear loadf3, the insulated gate bipolar transistor Sc1Emitter and insulated gate bipolar it is brilliant
Body pipe Sc4Collector between series capacitance Cf3, the insulated gate bipolar transistor Sc1Collector and emitter between connect
Inverse parallel freewheeling diode Vc1, the inverse parallel freewheeling diode Vc1Anode and insulated gate bipolar transistor Sc1Emitter
Connection, the insulated gate bipolar transistor Sc2Collector and emitter between connect inverse parallel freewheeling diode Vc2, described anti-
Freewheeling diode V in parallelc2Anode and insulated gate bipolar transistor Sc2Emitter connection, the insulated gate bipolar transistor
Sc3Collector and emitter between connect inverse parallel freewheeling diode Vc3, the inverse parallel freewheeling diode Vc3Anode with
Insulated gate bipolar transistor Sc3Emitter connection, the insulated gate bipolar transistor Sc4Collector and emitter between go here and there
Join inverse parallel freewheeling diode Vc4, the inverse parallel freewheeling diode Vc4Anode and insulated gate bipolar transistor Sc4Transmitting
Pole connection；
The practical compensation electric current of three-phase striding capacitance is respectively if1, if2, if3, the practical compensation electric current of passive filter is respectively ik1,
ik2, ik3, respectively the practical compensation electric current of the three-phase striding capacitance of every phase and the practical compensation electric current of passive filter are summed to obtain every
Mutually practical compensation electric current, passes through abc-dq0 coordinate transform for the practical compensation electric current of every phase, the practical compensation electric current of three-phase is converted to
The practical compensation electric current i of two-phased, iq；
Again by obtaining theoretic load current to load-side three-phase current detection, equally theoretic load current is passed through
Abc-dq0 coordinate transform obtains diphase theory compensation electric current；
Then the fundamental current of every phase is obtained by low-pass filter, then needs to compensate electric current with theory and makes the difference to get to two-phase
Theoretical com-pensation electric current id*, iq*；DC capacitor voltage Ud1 and Ud2 setting value are made the difference with actual value, controls and reduces by PI
Difference is just compensated i by errord* before；
Diphase theory compensation electric current and practical compensation electric current are made the difference, then compensation current error is reduced by PI controller, then lead to
Cross broad sense Adverse control, generalized inverse parameter a11, a21 connect with integral element, and generalized inverse parameter a10 and integral element, generalized inverse are joined
Number a11 forms algebraic loop negative-feedback and inputs to generalized inverse, and generalized inverse parameter a20 and integral element, generalized inverse parameter a21 form generation
Ring of numbers negative-feedback is inputted to generalized inverse；
The filter model that three level Generalized Inverse Methods are derived, the expression of reverse-direction derivation PDPWM switching coefficient U1, U2 and U3
Formula, by expression formula Cascade System before the parallel-connection structure filter system of striding capacitance and passive filter, so that two system groups
At compound pseudo-linear system Linearized Decoupling complete decoupling control so that two-phase output is mutually indepedent unrelated；Finally,
Two-phase output is obtained into the compensation electric current of every phase by dq0-abc inverse transformation.
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| CN102594192A (en) * | 2010-11-30 | 2012-07-18 | 中国南方电网有限责任公司电网技术研究中心 | Step wave pulse width modulation method based on nonlinear programming |
| CN103296913A (en) * | 2012-03-02 | 2013-09-11 | 台达电子企业管理（上海）有限公司 | Inverter and active power filter system |
| CN104953913A (en) * | 2015-07-03 | 2015-09-30 | 兰州交通大学 | Networked AC (alternating current) motor LS-SVM (least squares support vector machine) generalized inverse decoupling control method based on active-disturbance rejection |
| CN205901304U (en) * | 2016-08-15 | 2017-01-18 | 兰州交通大学 | Mixed type APF topology circuit who contains flying capacitor structure |
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| CN102594192A (en) * | 2010-11-30 | 2012-07-18 | 中国南方电网有限责任公司电网技术研究中心 | Step wave pulse width modulation method based on nonlinear programming |
| CN103296913A (en) * | 2012-03-02 | 2013-09-11 | 台达电子企业管理（上海）有限公司 | Inverter and active power filter system |
| CN104953913A (en) * | 2015-07-03 | 2015-09-30 | 兰州交通大学 | Networked AC (alternating current) motor LS-SVM (least squares support vector machine) generalized inverse decoupling control method based on active-disturbance rejection |
| CN205901304U (en) * | 2016-08-15 | 2017-01-18 | 兰州交通大学 | Mixed type APF topology circuit who contains flying capacitor structure |
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