CN106129808A - A kind of perovskite nanostructured plasma laser - Google Patents
A kind of perovskite nanostructured plasma laser Download PDFInfo
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- CN106129808A CN106129808A CN201610636452.8A CN201610636452A CN106129808A CN 106129808 A CN106129808 A CN 106129808A CN 201610636452 A CN201610636452 A CN 201610636452A CN 106129808 A CN106129808 A CN 106129808A
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- halide perovskite
- lead halide
- nanometer sheet
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- perovskite
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
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Abstract
The invention belongs to micro-nano photon and laser technology field, particularly to a kind of perovskite nanostructured plasma laser.A kind of lead halide perovskite plasma laser, including lead halide perovskite nanometer sheet, insulating medium layer, metallic substrates, lead halide perovskite nanometer sheet is the regular polygon structure of regular shape, it is positioned at the top of metallic substrates, insulating medium layer, insulating medium layer is had to be less than 0.75 with the ratio of the refractive index of lead halide perovskite nanometer sheet between lead halide perovskite nanometer sheet and metallic substrates.The present invention has effective chamber feedback, threshold value is low and the characteristic of Wavelength tunable.
Description
Technical field
The invention belongs to micro-nano photon and laser technology field, swash particularly to a kind of perovskite nanostructured plasma
Light device.
Background technology
In the past few decades, laser science manufacture higher, faster, achieve huge one-tenth on less coherent source
Merit.Similar with electronic device, the miniaturization of photonic device and integrated have broad application prospects.Microminiature laser can be applicable to
Chemistry and biomedical engineering field, such as the high-sensitivity detection of chemical substance, the biosensor of high sensitivity small size, aobvious
Micro-art and laser surgery etc..Additionally, microminiature laser also has extensively in fields such as full optical oomputing, optical storage and nanoanalysis
Application.
Laserresonator based on traditional sucrose material is limited by diffraction limit, and its spot size cannot be less than light wave
Long half.This long-standing obstacle can be solved by surface plasma body technique.Surface plasma excimer is one
Planting the electronics density wave of oscillation, luminous energy is stored in metal and medium boundary with the form of electronic with extremely compact form by it
At face, when the optical gain of medium can compensate dissipation loss, it is possible to realize laser.This novel compact coherent light
Source is referred to as surface plasmon.Surface plasma excimer is utilized can the light source of nanometer scale to be designed, logical
Cross the Eurytrema coelomatium in manipulation Purcell region, its spontaneous emission rate can be significantly improved thus laser threshold is greatly lowered
Value.The ability of these uniquenesses makes surface plasmon cause in the past few years to pay close attention to widely, and achieves a lot
Important progress.
2012, Shangjr Gwo group of department of physics of TaiWan, China Tsing-Hua University and Texas ,Usa university Austin
Branch school Chih-Kang Shih group utilizes extension silverskin and gain media to have the InGaN of epitaxial nitride gallium for outer layer
Nanometer rods composition surface plasma resonance chamber successfully demonstrate continuous surface plasmon (Science.337,
p450-453,2012).It is smooth thus significantly reduce loss that extension silverskin used in experiment reaches atom level.But due to
Lacking effective chamber feedback and gain media InGaN quantum efficiency is low, Auger is lost (after referring to electronics and hole-recombination
Launch electronics to release energy, be lost exactly for producing laser) high, this surface plasmon is still necessary to work
Under the conditions of liquid nitrogen, produce laser to obtain enough gains.
It addition, in the patent that notification number is CN 102957086A (a kind of deep sub-wavelength plasma laser), invented
Laser instrument include basal layer, metal film layer, insulating medium layer and the air groove offered in this insulating medium layer, nanometer
Line is embedded in air groove upper oral part and also has a gap containing air under it between cylinder and the metallic film of bottom land, and at air
Gap produces laser.Although utilizing the air gap can improve field intensity effect, but this laser instrument lacking effective chamber feedback equally
And it is low that gain media quantum efficiency is partly led in existence, the problem that Auger loss is high, it is therefore desirable to the pumping laser of higher energy
Or work under low temperature (using liquid nitrogen cooling).
Summary of the invention
The technical problem to be solved is: how to solve the problem in background technology, it is provided that one has effectively
Chamber is fed back, threshold value is low and the room temperature halogenide perovskite plasma laser of Wavelength tunable.
The technical solution adopted in the present invention is: a kind of lead halide perovskite plasma laser, it is characterised in that: bag
Including lead halide perovskite nanometer sheet, insulating medium layer, metallic substrates, lead halide perovskite nanometer sheet is the most polygon of regular shape
Shape structure, is positioned at the top of metallic substrates, has insulating medium layer between lead halide perovskite nanometer sheet and metallic substrates, insulation
Dielectric layer is less than 0.75 with the ratio of the refractive index of lead halide perovskite nanometer sheet.Described lead halide perovskite nanometer sheet thickness is
20-300 nanometer, shape of cross section is equilateral triangle or regular hexagon, and the length of side is 5-50 micron.Metallic substrates is 100 nanometers, its
Material silver or aluminum.The material of described insulating medium layer is the one in silicon dioxide or Afluon (Asta), and thickness of insulating layer is 5-10
Nanometer.Described lead halide perovskite nanometer sheet material is lead halide perovskite, and chemical formula is CH3NH3PbX3(X=I, Br, Cl), halogen
Race's element is the one in I, Br, Cl.First on substrate metal film (metallic substrates) and upper loading thereof ultra-thin absolutely
Edge dielectric layer, to obtain the medium/metal composite membrane of high surface quality, then by gain media lead halide perovskite nanometer sheet
Transfer to above composite membrane, form the structure of a kind of nanometer sheet/insulating medium layer/metallic film.Described substrate material be silicon or
Sapphire.
The invention has the beneficial effects as follows: using thickness between perovskite nanometer sheet and metallic substrates is the exhausted of nanometer scale
Laser can be focused on a hot spot diffraction limit as intermediate layer and also want the very small region of little 100 times by edge dielectric layer.Pass through
Surface plasmon polaritons and waveguide mode are coupled together by intermediate layer, and energy will be stored in non-metallic regions so that being lost
Significantly reduce.The quantum yield of lead halide perovskite is up to 17%, and stimulated radiation is the most efficient.The most described lead halide perovskite
The quantum yield that nanometer sheet plasma laser has taken existing semiconductor nanowires surface plasmon is low, and Auger is lost
Height, the defect that chamber feedback is low, it is possible to achieve the laser that Low threshold miniaturization is integrated.Lead halide perovskite carrier lifetime is up to
101-2 ns, diffusion length can be the most just that surface plasma swashs up to the advantage such as micron dimension, high fluorescent yield
Light provides enough gains, and the present invention is for be applied to halogenide perovskite in plasma laser first.Combine surface
The advantage of plasmon and both new calcium titanium ore laser, develops a kind of with perovskite nanostructured as gain media
Surface plasmon device.This laser instrument has effective chamber feedback can make laser threshold significantly reduce.
3. the nanostructured utilizing halogenide perovskite to replace conventional semiconductor material composition produces sharp as gain media
Light, make laser required for carrier density threshold value low, additionally by regulation halogenide perovskite nanostructured synthetic material
The wavelength of tunable laser, and halogenide perovskite nanometer sheet edge length and thickness adjustable.Receive with lead halide perovskite
The multi-layer compound structure of rice sheet/dielectric/metallic forms can be with excitating surface plasma wave guide cavity resonance mode, by light office
Territory in deep sub-wavelength region thus utilize Purcell effect to reduce laser threshold further to realize a kind of brand-new Low threshold extra small
Type laser instrument, makes promotion for the development of nanometer laser technology, promote supercomputer chip, high sensitive biosensor,
The treatment of disease advances with multiple fields such as research and next generation communication technology.
Accompanying drawing explanation
Fig. 1 is the entity structure schematic diagram of the lead halide perovskite plasma laser of the present invention；
Fig. 2 is the profile of the lead halide perovskite plasma laser of the present invention；
In figure: 1. lead halide perovskite nanometer sheet, 2. insulating medium layer, 3. metallic substrates.
Detailed description of the invention
It is embodied as making further instructions to the present invention below.
Embodiment 1:
On the silicon chip of one piece of surfacing, evaporation thickness is the silver of 100 nanometers, is then 5 nanometers at silver surface evaporation thickness
Silicon dioxide, formed silver/silicon dioxide composite membrane；Make lead iodide perovskite nanometer sheet CH3NH3PbI3, wherein, lead iodide
Perovskite nanometer sheet thickness is 150 nanometers, and shape of cross section is regular hexagon, and the regular hexagon length of side is 32 microns, then iodine
Change lead perovskite nanometer sheet and move on silver/silicon dioxide composite membrane, form silver/silicon dioxide/lead iodide perovskite nanometer sheet
Structure, in this structure, the refractive index of silver is 0.14+5.14i, and thickness is the silver of 100 nanometers, and the refractive index of silicon dioxide is
1.45, thickness is 5 nanometers, and the refractive index of lead iodide perovskite nanometer sheet is 2.54+0.03i, and thickness is 150 nanometers, transversal
Face is shaped as regular hexagon, and the regular hexagon length of side is 32 microns.Result of the present invention can be total to by excitating surface plasma wave guide cavity
Shake pattern, light local in deep sub-wavelength region thus is utilized Purcell effect to reduce laser threshold further and realizes a kind of complete
New Low threshold microminiature laser instrument, the development for nanometer laser technology is made promotion, is promoted supercomputer chip, high sensitivity
Degree biosensor, multiple fields such as treatment and research and next generation communication technology of disease advance.
Embodiment 2:
On the silicon chip of one piece of surfacing, evaporation thickness is the silver of 100 nanometers, is then 10 to receive at silver surface evaporation thickness
The silicon dioxide of rice, forms silver/silicon dioxide composite membrane；Make lead bromide perovskite nanometer sheet CH3NH3PbBr3, wherein, bromination
Lead perovskite nanometer sheet thickness is 50 nanometers, and shape of cross section is regular hexagon, and the regular hexagon length of side is 32 microns, then bromine
Change lead perovskite nanometer sheet and move on silver/silicon dioxide composite membrane, form silver/silicon dioxide/lead bromide perovskite nanometer sheet
Structure, in this structure, the refractive index of silver is 0.14+5.14i, and thickness is the silver of 100 nanometers, and the refractive index of silicon dioxide is
1.45, thickness is 10 nanometers, and the refractive index of lead bromide perovskite nanometer sheet is 2.86+0.04i, and thickness is 50 nanometers, cross section
Being shaped as regular hexagon, the regular hexagon length of side is 32 microns.Result of the present invention can the resonance of excitating surface plasma wave guide cavity
Pattern, in deep sub-wavelength region by light local thus utilizes Purcell effect to reduce laser threshold further and realizes a kind of brand-new
Low threshold microminiature laser instrument, make promotion for the development of nanometer laser technology, promote supercomputer chip, high sensitive
Biosensor, the treatment of disease advance with multiple fields such as research and next generation communication technology.
Embodiment 3:
On the sapphire of one piece of surfacing, evaporation thickness is the aluminum of 100 nanometers, is then 8 nanometers at silver surface evaporation thickness
Afluon (Asta), formed aluminum/Afluon (Asta) composite membrane；Make lead chloride perovskite nanometer sheet CH3NH3PbCl3, wherein, lead chloride calcium titanium
Ore deposit nanometer sheet thickness is 200 nanometers, and shape of cross section is positive triangle, and the positive triangle length of side is 48 microns, then lead bromide
Perovskite nanometer sheet moves on aluminum/Afluon (Asta) composite membrane, forms aluminum/Afluon (Asta)/lead chloride perovskite nanometer sheet structure, this knot
In structure, the refractive index of aluminum is 1.48+3.14i, and thickness is 100 nanometers, and the refractive index of Afluon (Asta) is 1.38, and thickness is 8 nanometers, chlorine
The refractive index changing lead perovskite nanometer sheet is 3.06+0.04i, and thickness is 200 nanometers, and shape of cross section is positive triangle, positive three
The limit shape length of side is 48 microns.Result of the present invention can excitating surface plasma wave guide cavity resonance mode, by light local deep sub-
Wavelength region thus utilize Purcell effect to reduce laser threshold further and realize a kind of brand-new Low threshold microminiature laser
Device, make promotion for the development of nanometer laser technology, promotes supercomputer chip, high sensitive biosensor, disease
Treatment with study and multiple fields such as next generation communication technology advance.
Claims (5)
1. a lead halide perovskite plasma laser, it is characterised in that: include that lead halide perovskite nanometer sheet, insulation are situated between
Matter layer, metallic substrates, lead halide perovskite nanometer sheet is the regular polygon structure of regular shape, is positioned at the top of metallic substrates,
Insulating medium layer, insulating medium layer and lead halide perovskite nanometer sheet is had between lead halide perovskite nanometer sheet and metallic substrates
The ratio of refractive index less than 0.75.
A kind of lead halide perovskite plasma laser the most according to claim 1, it is characterised in that: described lead halide
Perovskite nanometer sheet thickness is 20-300 nanometer, and shape of cross section is equilateral triangle or regular hexagon, and the length of side is 5-50 micron.
A kind of lead halide perovskite plasma laser the most according to claim 1, it is characterised in that: Metal Substrate base thickness
Degree is 100 nanometers, its material silver or aluminum.
A kind of lead halide perovskite plasma laser the most according to claim 1, it is characterised in that: described insulation is situated between
The material of matter layer is the one in silicon dioxide or Afluon (Asta), and thickness of insulating layer is 5-10 nanometer.
A kind of lead halide perovskite plasma laser the most according to claim 1, it is characterised in that: described lead halide
Perovskite nanometer sheet material is lead halide perovskite, and chemical formula is CH3NH3PbX3, X is the one in I, Br, Cl.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106757372A (en) * | 2016-11-25 | 2017-05-31 | 太原理工大学 | A kind of methylamine lead iodine perovskite monocrystalline microcavity and preparation method thereof |
| CN108063365A (en) * | 2017-12-12 | 2018-05-22 | 中国科学院半导体研究所 | The preparation method of electric pump perovskite quantum dot laser |
| CN109260603A (en) * | 2018-10-31 | 2019-01-25 | 京东方科技集团股份有限公司 | Method, device for laser therapy and the system of laser source are formed using metal halide perovskite material |
| CN111864532A (en) * | 2020-07-03 | 2020-10-30 | 太原理工大学 | Surface protection layer for improving stability of perovskite nanosheet laser and preparation method thereof |
| CN112421362A (en) * | 2020-10-30 | 2021-02-26 | 太原理工大学 | High-energy-efficiency perovskite photonic crystal laser |
| CN112504999A (en) * | 2020-12-16 | 2021-03-16 | 深圳大学 | Novel optical sensor based on perovskite nano material |
| CN112754477A (en) * | 2019-11-05 | 2021-05-07 | 南京大学 | Latent fingerprint display method based on cesium halide lead perovskite nano material |
| WO2021155672A1 (en) * | 2020-02-03 | 2021-08-12 | 苏州大学 | Hexagonal semiconductor microdisk laser |
| RU2815603C1 (en) * | 2023-09-14 | 2024-03-19 | федеральное государственное автономное образовательное учреждение высшего образования "Казанский (Приволжский) федеральный университет" (ФГАОУ ВО КФУ) | Method of controlling phase composition of inorganic halide perovskites and thermally controlled light source obtained using said method |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106757372A (en) * | 2016-11-25 | 2017-05-31 | 太原理工大学 | A kind of methylamine lead iodine perovskite monocrystalline microcavity and preparation method thereof |
| CN108063365A (en) * | 2017-12-12 | 2018-05-22 | 中国科学院半导体研究所 | The preparation method of electric pump perovskite quantum dot laser |
| CN108063365B (en) * | 2017-12-12 | 2020-11-13 | 中国科学院半导体研究所 | Preparation method of electric pumping perovskite quantum dot laser |
| CN109260603A (en) * | 2018-10-31 | 2019-01-25 | 京东方科技集团股份有限公司 | Method, device for laser therapy and the system of laser source are formed using metal halide perovskite material |
| CN112754477A (en) * | 2019-11-05 | 2021-05-07 | 南京大学 | Latent fingerprint display method based on cesium halide lead perovskite nano material |
| CN112754477B (en) * | 2019-11-05 | 2021-12-24 | 南京大学 | Latent fingerprint display method based on cesium halide lead perovskite nano material |
| WO2021155672A1 (en) * | 2020-02-03 | 2021-08-12 | 苏州大学 | Hexagonal semiconductor microdisk laser |
| CN111864532A (en) * | 2020-07-03 | 2020-10-30 | 太原理工大学 | Surface protection layer for improving stability of perovskite nanosheet laser and preparation method thereof |
| CN112421362A (en) * | 2020-10-30 | 2021-02-26 | 太原理工大学 | High-energy-efficiency perovskite photonic crystal laser |
| CN112421362B (en) * | 2020-10-30 | 2022-02-08 | 太原理工大学 | High-energy-efficiency perovskite photonic crystal laser |
| CN112504999A (en) * | 2020-12-16 | 2021-03-16 | 深圳大学 | Novel optical sensor based on perovskite nano material |
| CN112504999B (en) * | 2020-12-16 | 2023-04-28 | 深圳大学 | Optical sensor based on perovskite nano material |
| RU2815603C1 (en) * | 2023-09-14 | 2024-03-19 | федеральное государственное автономное образовательное учреждение высшего образования "Казанский (Приволжский) федеральный университет" (ФГАОУ ВО КФУ) | Method of controlling phase composition of inorganic halide perovskites and thermally controlled light source obtained using said method |
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| CN106129808B (en) | 2019-01-29 |
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