CN108063365A - The preparation method of electric pump perovskite quantum dot laser - Google Patents
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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Abstract
A kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：Step 1：In first photon crystal structure of substrate etching resonator knead dough emission mechanism is provided for laser；Step 2：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electrode are sequentially prepared on a negative electrode, forms the first substrate；Step 3：The substrate for being etched with the first photon crystal structure with the first substrate is bonded, completes to prepare.The present invention can obtain electric pump perovskite quantum dot laser structure simple in structure, can effectively improve external quantum efficiency of the perovskite quantum dot under electric pump.
Description
Technical field
The present invention relates to quantum dot laser field, it relates in particular to a kind of perovskite quantum dot laser of electric pump
The preparation method of device.
Background technology
Perovskite material refers to a kind of material with perovskite crystal structure.This kind of materials chemistry formula is ABX3, A/B/X
It can be substituted by multiple element.Perovskite material is narrow with luminescent spectrum, and colour purity is suitable with CdSe quantum dot；And the ripple that shines
The advantages that length can be regulated and controled by chemical constituent and the size of nanocrystal, and emission wavelength can cover entire visible light.
Perovskite material is at low cost.There are two kinds of preparation methods of perovskite at present：1. precursor solution method；Precursor solution method
Preparation process is that the precursor of perovskite and solvent are mixed to get mixed liquor first, by mixed liquor spin coating on substrate, finally
Annealing forms film.2. nanocrystal dispersion method；The preparation process of nanocrystal dispersion method is the gluey perovskite that will be prepared
Nanocrystal forms film by solution-deposition methods such as spin-coating method or drop-coatings.Two kinds of preparation methods of perovskite thin film are all not required to
Want high temperature, and required material cost is not also high in itself for perovskite.
Perovskite material quantum efficiency is high.Exemplified by mixing perovskite material, optical physics measurement display a few days ago, film knot
The perovskite internal quantum efficiency of structure can be more than 80%, the external quantum efficiency 90% of nanocrystal, and external quantum efficiency is because coupling
Etc. factors limitation.Electric pump perovskite LED is 8.8% in the external quantum efficiency of near infrared band at present, in the outer amount of green light band
Sub- efficiency is 8.53%, is 1.38% in the external quantum efficiency of blue wave band.Electric pump perovskite LED endures the low limit of quantum efficiency to the fullest extent
System.
Research on perovskite laser at present is concentrated mainly on optical pumping, and the perovskite laser of optical pumping mainly uses back
The resonators types such as sound wall pattern, DFB, FP chamber and Random Laser.And the perovskite laser of electric pump is never reported, only
There is the perovskite LED of electric pump, and quantum efficiency is also only 8.8% or so.
Way by the use of photonic crystal as the resonator of laser is long-standing, just sharp in Noda research groups in 1999
With the electric pump laser (Imada, Chutinan [1]) that surface launching is realized with edge mode of the Γ points of two-dimentional triangular crystal lattice,
N-InP etches photon crystal structure, is then bonded n-type area with the p-InP containing Quantum Well, the surface launching for realizing electric pump swashs
Light device.Hereafter the research of the surface-emitting laser based on photonic crystal is increased, and the structure of photonic crystal is also not only limited in
Two dimension also has some based on three-dimensional resonator (Noda, Tomoda [2]).The lattice types of photonic crystal also expand to triangle crystalline substance
Lattice, tetragonal lattice (Noda, Yokoyama [3]) etc., these photon crystal structures are also gradually applied to other kinds of material.
It is not reported so far for the photon crystal laser of perovskite material, patent document (granted patent number
CN101369715 B) there is the tectosome of photonic crystal and surface-emitting laser etc. to be related to the patent of photonic crystal be to utilize light
The band edge mode of sub- crystal realizes surface launching, and the microcavity of photonic crystal or array or coupled cavity arrays are not comprised in
It is interior, and surface-emitting laser is not directed to perovskite material and exclusive electric filling structure.
Patent document (granted patent number CN101641847 A) proposes the photon crystal laser based on GaN material, photon
Crystal layer is limited between n-type coating and active layer or between p-type layer and active layer.Such structure is not appropriate for calcium titanium
Pit wood material.It is poly- between 1.5-2 that refractive index is generally with transport layer electron transfer layer and hole transmission layer to perovskite at present
Object is closed, is not appropriate for doing photonic crystal.
The content of the invention
It is an object of the invention to provide a kind of preparation method of electric pump perovskite quantum dot laser, this method is easy to
It realizes, electric pump perovskite quantum dot laser structure simple in structure can be obtained, perovskite quantum dot can be effectively improved and existed
External quantum efficiency under electric pump.
The present invention provides a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：In first photon crystal structure of substrate etching resonator knead dough emission mechanism is provided for laser；
Step 2：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electricity are sequentially prepared on a negative electrode
Pole forms the first substrate；
Step 3：The substrate for being etched with the first photon crystal structure with the first substrate is bonded, completes to prepare.
The present invention also provides a kind of preparation methods of electric pump perovskite quantum dot laser, include the following steps：
Step 1：In a substrate etching photon first crystal structure, resonator knead dough emission mechanism is provided for laser；
Step 2：One side on an electron transfer layer is sequentially prepared perovskite quantum dot layer, hole transmission layer and positive electricity
Pole, on the electron transport layer the opposite side in face prepare negative electrode, form the second substrate；
Step 3：The substrate for being etched with the first photon crystal structure with the second substrate is bonded, completes to prepare.
The present invention provides a kind of preparation method of electric pump perovskite quantum dot laser again, includes the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electricity are sequentially prepared on a negative electrode
Pole；
Step 2：Etching, etches the second photon crystal structure, resonator and surface launching is provided for laser on the positive electrode
Mechanism.
The present invention provides a kind of preparation method of electric pump perovskite quantum dot laser again, includes the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electricity are sequentially prepared on a negative electrode
Pole；
Step 2：Etching, three-photon crystal structure is etched on negative electrode, resonator and surface launching are provided for laser
Mechanism.
The present invention also provides a kind of preparation methods of electric pump perovskite quantum dot laser, include the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer and hole transmission layer are sequentially prepared on a negative electrode；
Step 2：Etching etches the 4th photon crystal structure on hole transmission layer, resonator knead dough is provided for laser
Emission mechanism；
Step 3：Positive electrode is prepared on the hole transmission layer for be etched with photon crystal structure.
The present invention provides a kind of preparation method of electric pump perovskite quantum dot laser again, includes the following steps：
Step 1：Electron transfer layer is prepared on a negative electrode；
Step 2：Etching etches the 5th photon crystal structure, resonator knead dough is provided for laser on the electron transport layer
Emission mechanism；
Step 3：Perovskite quantum dot layer is sequentially prepared on the electron transfer layer for be etched with photon crystal structure, prepares sky
Cave transport layer and positive electrode.
The invention has the advantages that this method is easily achieved, electric pump perovskite quantum dot simple in structure can be obtained and swashed
Light device structure can effectively improve external quantum efficiency of the perovskite quantum dot under electric pump.
Description of the drawings
For the technology contents further illustrated the present invention, with reference to embodiments and attached drawing is described in detail as after, wherein：
Fig. 1 is the preparation flow figure of first embodiment of the invention；
Fig. 2 is electrical pumping perovskite laser first embodiment schematic cross-section of the present invention；
Fig. 3 is electrical pumping perovskite laser second embodiment schematic cross-section of the present invention；
Fig. 4 is electrical pumping perovskite laser 3rd embodiment schematic cross-section of the present invention；
Fig. 5 is electrical pumping perovskite laser fourth embodiment schematic cross-section of the present invention；
Fig. 6 is the 5th embodiment schematic cross-section of electrical pumping perovskite laser of the present invention；
Fig. 7 is electrical pumping perovskite laser sixth embodiment schematic cross-section of the present invention.
Specific embodiment
It please refers to Fig.1 with reference to the flow chart and structure chart that first embodiment of the invention is shown refering to Fig. 2, the present invention provides
A kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：The first photon crystal structure 6 ', which is etched, in a substrate 6 provides resonator knead dough emission mechanism for laser,
First photon crystal structure 6 ' includes the photonic crystal of different crystalline lattice, different defect cavity or array or coupled cavity arrays and complete
Whole photonic crystal or chirp grading structure, random structure；
Step 2：Electron transfer layer 4, perovskite quantum dot layer 3,2 and of hole transmission layer are sequentially prepared on a negative electrode 5
Positive electrode 1 forms the first substrate；
Step 3：The substrate 6 for being etched with photonic crystal or photonic crystal arrays with the first substrate is bonded, completes to prepare.
Wherein substrate 6 and the combination of the first substrate or the second substrate include Direct Bonding, BCB secondary indirects are bonded or
Direct growth.Photon crystal structure 6 ' and 3 distance of perovskite quantum dot layer meet coupling condition；Since resonant structure is positioned at active
Below area, the photon that Carrier recombination is sent in perovskite quantum dot layer 3 is brilliant in photon by electron transfer layer 4 and negative electrode 5
Resonance in body structure 6 ', finally from 1 light extraction of positive electrode.
The preparation method of wherein the first substrate is not limited to be sequentially prepared since negative electrode 5；It is made successively using from positive electrode 1
Preparation method for hole transmission layer 2, perovskite quantum dot layer 3, electron transfer layer 4 and negative electrode 5 can also obtain the first base
Piece and the second substrate；The preparation method of the first substrate common in laboratory and the second substrate is sequentially prepared from glass at present
Positive electrode 1, hole transmission layer 2, perovskite quantum dot layer 3, electron transfer layer 4 and negative electrode 5.
The structure chart that Fig. 3 show second embodiment of the invention is referred to, the present invention provides electric pump perovskite quantum dot
The preparation method of laser, includes the following steps：
Step 1：In a substrate 6 etching photon first crystal structure 6 ', resonator knead dough emission mechanism is provided for laser,
First photon crystal structure 6 ' includes the photonic crystal of different crystalline lattice, different defect cavity or array or coupled cavity arrays and complete
Whole photonic crystal or chirp grading structure, random structure；
Step 2：One side on an electron transfer layer 4 is sequentially prepared perovskite quantum dot 3, hole transmission layer 2 and just
Electrode 1, the opposite side on electron transfer layer 4 prepare negative electrode 5, form the second substrate；
Step 3：The substrate 6 for being etched with photonic crystal or photonic crystal arrays with the second substrate is bonded, completes to prepare.
Wherein substrate 6 and the combination of the first substrate or the second substrate include Direct Bonding, BCB secondary indirects are bonded or
Direct growth.Photon crystal structure 6 ' and 3 distance of perovskite quantum dot layer meet coupling condition；Since resonant structure is positioned at active
Below area, the photon that Carrier recombination is sent in perovskite quantum dot layer 3 is brilliant in photon by electron transfer layer 4 and negative electrode 5
Resonance in body structure 6 ', finally from 1 light extraction of positive electrode.
The structure chart that Fig. 4 show third embodiment of the invention is referred to, the present invention provides a kind of electric pump perovskite amount
The preparation method of sub- dot laser, includes the following steps：
Step 1：Electron transfer layer 4, perovskite quantum dot 3, hole transmission layer 2 and just are sequentially prepared on a negative electrode 5
Electrode 1；
Step 2：Etching, etches the second photon crystal structure 1 ' on positive electrode 1, and resonator knead dough hair is provided for laser
Mechanism is penetrated, it is brilliant which includes different crystalline lattice, different defect cavities or the photon of array or coupled cavity arrays
Body and complete photonic crystal or chirp grading structure, random structure.
Wherein photon crystal structure 1 ' and 2 ' is located at active region, and positive electrode 1 is using transparent material ITO, hole transport
Layer is using transparent material F8, and using Ag, either Al or plated film increase reflection to negative electrode 5；Carrier in perovskite quantum dot layer 3
The compound photon sent, the resonance in photon crystal structure 1 ' or 2 ', finally from 1 light extraction of positive electrode.
The structure chart that Fig. 5 show fourth embodiment of the invention is referred to, the present invention provides a kind of electric pump perovskite amount
The preparation method of sub- dot laser, includes the following steps：
Step 1：Electron transfer layer 4, perovskite quantum dot 3, hole transmission layer 2 and just are sequentially prepared on a negative electrode 5
Electrode 1；
Step 2：Etching, etches the second photon crystal structure 5 ' on negative electrode 5, and resonator knead dough hair is provided for laser
Mechanism is penetrated, it is brilliant which includes different crystalline lattice, different defect cavities or the photon of array or coupled cavity arrays
Body and complete photonic crystal or chirp grading structure, random structure.
Wherein photon crystal structure 5 ' and 4 ' is located at below active area, and negative electrode 5 is using transparent material ITO, electron-transport
Layer is using transparent material TpBi, and using Ag, either Al or plated film increase reflection to positive electrode 1；Current-carrying in perovskite quantum dot layer 3
The compound photon sent of son, the resonance in photon crystal structure 5 ' or 4 ', finally from 5 light extraction of negative electrode.
The structure chart that Fig. 6 show fifth embodiment of the invention is referred to, the present invention provides a kind of electric pump perovskite amount
The preparation method of sub- dot laser, includes the following steps：
Step 1：Electron transfer layer 4, perovskite quantum dot 3 and hole transmission layer 2 are sequentially prepared on a negative electrode 5；
Step 2：Etching, on hole transmission layer 2 etch the 4th photon crystal structure 2 ', for laser provide resonator with
Surface launching mechanism；
Step 3：Positive electrode 1 is prepared on the hole transmission layer 2 for being etched with photonic crystal.
Wherein photon crystal structure 1 ' and 2 ' is located at active region, and positive electrode 1 is using transparent material ITO, hole transport
Layer is using transparent material F8, and using Ag, either Al or plated film increase reflection to negative electrode 5；Carrier in perovskite quantum dot layer 3
The compound photon sent, the resonance in photon crystal structure 1 ' or 2 ', finally from 1 light extraction of positive electrode
The structure chart that Fig. 7 show sixth embodiment of the invention is referred to, the present invention provides a kind of electric pump perovskite amount
The preparation method of sub- dot laser, includes the following steps：
Step 1：Electron transfer layer 4 is prepared on a negative electrode 5；
Step 2：Etching, on electron transfer layer 4 etch the 5th photon crystal structure 4 ', for laser provide resonator with
Surface launching mechanism；
Step 3：Perovskite quantum dot 3 is sequentially prepared on the electron transfer layer 4 for being etched with photonic crystal, prepares hole biography
Defeated layer 2 and positive electrode 1.
Wherein photon crystal structure 5 ' and 4 ' is located at below active area, and negative electrode 5 is using transparent material ITO, electron-transport
Layer is using transparent material TpBi, and using Ag, either Al or plated film increase reflection to positive electrode 1；Current-carrying in perovskite quantum dot layer 3
The compound photon sent of son, the resonance in photon crystal structure 5 ' or 4 ', finally from 5 light extraction of negative electrode.
The preparation method of electric pump perovskite quantum dot laser described in any of the above-described embodiment, wherein in positive electrode 1
Material with negative electrode is Al, Ag or transparent electrode ITO.Al, Ag provide reflection for electric pump perovskite laser, and light is from saturating
Prescribed electrode ITO is exported.
Above-described specific implementation has carried out further detailed description to the object of the invention, technical solution and effect,
It should be understood that the specific implementation case described above for the present invention, is not intended to limit the invention, it is all in the present invention
Spirit and principle in, any modification, equivalents, the improvement made should all be included in the protection scope of the present invention.
Reference paper
1.Imada, M., et al., Multidirectionally distributed feedback photonic
Crystal lasers.Physical Review B, 2002.65 (19)
2.Noda, S., et a1., Full three-dimensional photonic bandgap crystals at
Near-infrared wavelengths.Science, 2000.289 (5479)：p.604-606.
3.Noda, S., et al., Polarization mode control of two-dimensional
Photonic crystal laser by unit cell structure design.Science, 2001.293 (5532)：
p.1123-1125.
Claims (10)
1. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：In first photon crystal structure of substrate etching resonator knead dough emission mechanism is provided for laser；
Step 2：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electrode, shape are sequentially prepared on a negative electrode
Into the first substrate；
Step 3：The substrate for being etched with the first photon crystal structure with the first substrate is bonded, completes to prepare.
2. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：In a substrate etching photon first crystal structure, resonator knead dough emission mechanism is provided for laser；
Step 2：One side on an electron transfer layer is sequentially prepared perovskite quantum dot layer, hole transmission layer and positive electrode,
The opposite side in face prepares negative electrode on the electron transport layer, forms the second substrate；
Step 3：The substrate for being etched with the first photon crystal structure with the second substrate is bonded, completes to prepare.
3. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electrode are sequentially prepared on a negative electrode；
Step 2：Etching, etches the second photon crystal structure, resonator knead dough emission mechanism is provided for laser on the positive electrode.
4. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer, hole transmission layer and positive electrode are sequentially prepared on a negative electrode；
Step 2：Etching, three-photon crystal structure is etched on negative electrode, resonator knead dough emission mechanism is provided for laser.
5. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：Electron transfer layer, perovskite quantum dot layer and hole transmission layer are sequentially prepared on a negative electrode；
Step 2：Etching etches the 4th photon crystal structure on hole transmission layer, resonator and surface launching is provided for laser
Mechanism；
Step 3：Positive electrode is prepared on the hole transmission layer for be etched with photon crystal structure.
6. a kind of preparation method of electric pump perovskite quantum dot laser, includes the following steps：
Step 1：Electron transfer layer is prepared on a negative electrode；
Step 2：Etching etches the 5th photon crystal structure, resonator and surface launching is provided for laser on the electron transport layer
Mechanism；
Step 3：Perovskite quantum dot layer is sequentially prepared on the electron transfer layer for be etched with photon crystal structure, prepares hole biography
Defeated layer and positive electrode.
7. according to the preparation method of claim 1-6 any one of them electric pump perovskite quantum dot lasers, wherein first
To photonic crystal of the 5th photon crystal structure including different crystalline lattice, different defect cavities or array or coupled cavity arrays and completely
Photonic crystal or chirp grading structure, random structure.
8. according to the preparation method of claim 1-6 any one of them electric pump perovskite quantum dot lasers, wherein just
The material of electrode and negative electrode is Al, Ag or transparent electrode ITO.
9. the preparation method of electric pump perovskite quantum dot laser according to claim 1 or 2, wherein substrate and first
The combination of substrate or the second substrate includes Direct Bonding, the bonding of BCB secondary indirects or direct growth.
10. according to the preparation method of claim 1-6 any one of them electric pump perovskite quantum dot lasers, wherein photon
The resonance wavelength of crystal structure is consistent with the emission wavelength of perovskite material.
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| CN109030380B (en) * | 2018-07-25 | 2023-08-22 | 佛山科学技术学院 | Detection method and device for perovskite nanocrystalline random laser emission mechanism |
| CN109687290A (en) * | 2019-02-22 | 2019-04-26 | 中国科学院半导体研究所 | Electric pump perovskite composite chamber laser |
| CN111162446A (en) * | 2019-12-27 | 2020-05-15 | 山东大学 | Electric pumping perovskite laser |
| CN117134193A (en) * | 2023-10-10 | 2023-11-28 | 深圳技术大学 | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser |
| CN117134193B (en) * | 2023-10-10 | 2024-08-16 | 深圳技术大学 | Silicon-based electrically-pumped perovskite photonic crystal surface-emitting laser |
| CN118448982A (en) * | 2024-07-10 | 2024-08-06 | 深圳技术大学 | High-speed multiple harmonic frequency multiplication photon crystal surface emitting laser and preparation method thereof |
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| CN108063365B (en) | 2020-11-13 |
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