CN106129220B - A kind of production method and its making apparatus of LED chip - Google Patents
A kind of production method and its making apparatus of LED chip Download PDFInfo
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- CN106129220B CN106129220B CN201610582087.7A CN201610582087A CN106129220B CN 106129220 B CN106129220 B CN 106129220B CN 201610582087 A CN201610582087 A CN 201610582087A CN 106129220 B CN106129220 B CN 106129220B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims description 18
- 239000003292 glue Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000007771 core particle Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 13
- 238000000227 grinding Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000013467 fragmentation Methods 0.000 description 6
- 238000006062 fragmentation reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004018 waxing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
A kind of production method and its making apparatus of LED chip, for LED chip processing procedure, it is mainly used for improving chip because disconnected brilliant abnormal caused by the release of lower wax process stress, wafer is adhered on carrier after progress thinning, polishing, cancel original lower ceroplastic, wafer is fixed on carrier, using DBR In-Line making apparatus, directly progress DBR plated film.
Description
Technical field
Invention is related to LED chip production field, the in particular to production method and its making apparatus of a kind of LED chip.
Background technique
Light emitting diode (English is Light Emitting Diode, abbreviation LED) is a kind of solid-state semiconductor device, quilt
It is widely used in the lighting areas such as indicator light, display screen.The light extraction efficiency of LED depends on internal quantum efficiency and light extraction efficiency, wherein
Reflecting light can be improved by DBR plated film, to improve light extraction efficiency.
Existing chip process includes: 1. waxings: on thermal Ceramics disk and being coated with high temperature wax, chip is put as ceramic disk
On, film source is flattened using high pressure；2. being thinned: being thinned to crystal grain demand thickness (650=> 130um) using diamond wheel grinding；
3. bronze medal is thrown: carrying out film source using copper dish+diamond dust+rough polishing (130=> 100um) is accurately thinned；4. polishing: because
It wants burnishing surface therefore is polished for a long time using the polishing liquid of 1~3um；5. lower wax: using high-temperature heating platform by wax and core
Piece is detached from；6. cleaning: using go wax liquor body and organic solvent by wax in chip surface remove；7.DBR plated film operation: it will clean
Post-job film source is placed on chip disk, is promoted in DBR evaporator cavity, is carried out reflecting layer plated film, is carried out bottom sheet after the completion；
8. thin slice patch: film source is attached on blue film；9. cutting: carrying out film source cutting (just drawing/stealth cutting)；10. sliver: into
Row chopper sliver；11. expanding film: crystal grain is expanded into constant spacing.
It is existing because LED sapphire wafer size it is increasing caused by sapphire growth GaN product after internal flaw ratio
And internal stress is big, and epitaxy defect and personnel's operation operation fragmentation is caused to increase, and causes the disconnected brilliant problem of crystal grain.
Existing disconnected brilliant occurrence cause are as follows:
1. hard force release causes fragmentation after fragmentation, lower wax after in grinding；
2. stress causes epitaxy defect to discharge fragmentation after grinding lower wax；
3. washing and cleaning operation (going wax liquor body 2 times, ACE, IPA2 times, bath, drying) causes fragmentation；
It is secretly split 4. personnel's operation takes piece operation, clamping film source transmission vibration that edge is caused to collapse angle；
5.DBR(distributed Bragg reflecting layer) the upper and lower piece of plated film, clamping, placement, vibration cause to rupture；
In 6.DBR coating process, heat temperature raising causes chip thermal expansion rupture.
To sum up, there are the above reasons to generate defect problem when encapsulation takes brilliant die bond operation such as in crystal grain, i.e., can be in pick-and-place
Smooth fracture is led to the problem of in operation or after encapsulation finished product operation.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide a kind of production method of LED chip and its production
Equipment reduces the probability of smooth fracture.
The present invention solves technical solution used by the problems in background technique: a kind of production method of LED chip is used
In LED chip processing procedure, step is included at least:
S1, a wafer is provided, wafer includes P-type layer, active layer, N-type layer；
S2, wafer are fixed on carrier by adhesion technique；
S3, thinning, polishing are carried out to the wafer on carrier；
S4, DBR plated film is carried out to the wafer on carrier；
Carrier is taken out after S5, DBR plated film, separating technology is carried out to the wafer on carrier, separates wafer and carrier；
S6, wafer is cut into core particles again.
On the basis of the above production method, first the wafer on carrier can also be cut, then play wax, used
Technical solution be: a kind of production method of LED chip, be used for LED chip processing procedure, include at least step:
S1, a wafer is provided, wafer includes P-type layer, active layer, N-type layer；
S2, wafer are fixed on carrier by adhesion technique；
S3, thinning, polishing are carried out to the wafer on carrier；
S4, DBR plated film is carried out to the wafer on carrier；
Carrier is taken out after S5, DBR plated film, the wafer on carrier is cut into core particles；
S6, the wafer on carrier is separated, separates wafer and carrier.
Preferably, wafer is fixed on carrier by the adhesion technique using high temperature resistant wax or high temperature resistant glue material.
Preferably, the high temperature resistant wax or high temperature resistant glue material fusing point are not less than the maximum temperature of DBR plated film.
Preferably, the carrier is ceramic disk, metal dish, SiO2One of disk, Si disk or SiC disk can be
Bright, translucent or opaque material.
Preferably, the temperature of the DBR plated film is not more than 200 DEG C.
Preferably, the DBR plated film is sputtering type.
For ground, for production method more than satisfaction of the invention from hardware, the present invention provides a kind of LED chips
Making apparatus, for carrying out DBR plated film to the wafer on carrier, wafer is fixed on carrier by Wax enhancement, special
Sign is that the making apparatus includes at least cavity, carrying tray fixing device, DBR target, heating device, vacuum evacuation device, holds
Tray fixing device is carried for fixing carrier, DBR target and heating device are within the cavity, and when work, vacuum evacuation device is to chamber
Body is vacuumized.
Preferably, the carrying tray fixing device is connect with guide rail, has the function of moving on guide rail.
Preferably, the carrier is vertical to place or be horizontally arranged in DBR plated film.
Preferably, the carrier is ceramic disk, metal dish, SiO2One of disk, Si disk or SiC disk, carrier can
Think transparent, translucent or opaque material.
Preferably, the carrying tray fixing device and DBR target it is at least each there are two.
Compared with prior art, beneficial effects of the present invention include but is not limited to:
It is such to improve disconnected brilliant preparation method, it can reduce or avoid defect stress release in epitaxial wafer, thinned stress to release
Put, personnel's operation intermediate plate, DBR plated film generate thermal effect with etc. correlation fragmentation caused by reasons, avoid in potted ends generation product matter
Amount problem.Other than the above beneficial effect, other beneficial effects will have the present invention one by one in conjunction with specific embodiments in the description
Body description.
Detailed description of the invention
Fig. 1 is the operation schematic diagram of the making apparatus of embodiment 1；
Fig. 2 is the charging schematic diagram of the making apparatus of embodiment 1；
Fig. 3 is the operation schematic diagram of the making apparatus of embodiment 2；
Fig. 4 is the charging schematic diagram of the making apparatus of embodiment 2；
Fig. 5 is the carrier schematic diagram of embodiment 2；
Fig. 6 is the making apparatus schematic diagram of embodiment 4.
It is indicated in figure: 100, cavity；200, tray fixing device is carried；210, carrier；300, guide rail；400, DBR target；
500, heating device；600, vacuum evacuation device；610, pipeline；700, wafer.
Specific embodiment
The present invention is described in detail below with reference to schematic diagram, before proceeding to further describe the invention, it should be understood that
Due to that can be transformed to specific embodiment, the present invention is not limited to following specific embodiments.It should also manage
Solution, since the scope of the present invention is only defined by the following claims, used embodiment is introductory, rather than
It is restrictive.Unless otherwise stated, used herein of all technologies and scientific words and those skilled in the art
The meaning being commonly understood by is identical.
Embodiment 1
Referring to Fig. 1 and Fig. 2, the present embodiment first provides a kind of LED chip making apparatus, and the equipment is also known as DBR In-
Line(DBR is online), including cavity 100, carrying tray fixing device 200, guide rail 300, DBR target 400, heating device 500, pumping
Vacuum plant 600.A carrier 210 is provided, carrier 210 is one of ceramic disk, metal dish, Si disk or SiC disk, carrying
210 surface of disk is by wax mounting wafer 700, wherein carrying tray fixing device 200 and guide rail 300 cooperate, for fixed carrying
Disk 210 drives the charging of carrier 210 and discharging by movement of the carrying tray fixing device 200 on guide rail 300.When work,
Wafer 700 of the DBR target 400 on carrier 210 deposits DBR film, and the arrow direction in Fig. 1 represents the direction of DBR plated film,
Heating device 500 uses heat filament, is located in 100 internal side wall of cavity.Vacuum evacuation device 600 is vacuum generator, is passed through
Pipeline 610 extracts the gas in DBR cavity 100, removes the intracorporal miscellaneous gas of chamber.The carrier 210 of the present embodiment be wafer 700 to
On it is horizontal positioned.
The chip manufacturing process of the present embodiment comprising steps of
S1, a wafer 700 is provided, wafer 700 successively includes substrate, P-type layer, active layer, N-type layer, is provided in P-type layer
P electrode is provided with N electrode in N-type layer；
S2, the one side of 700 non-substrate of wafer is fixed on carrier 210 by Wax enhancement, the wax used is resistance to height
Warm wax, fusing point are not less than the maximum temperature of DBR plated film being applied on wax, and preferably 130 ~ 200 DEG C, the present embodiment uses fusing point
For 180 DEG C of wax；
S3, start grinding technics after terminating Wax enhancement, the wafer 700 on carrier 210 is carried out by grinding wheel
Thinning then passes through polishing machine wafer polishing 700；
S4, after completing grinding technics, DBR plated film is carried out to the wafer 700 on carrier 210, is sunk on 700 substrate of wafer
Product DBR reflective film；When deposition, temperature is 120 DEG C in DBR cavity 100；
S5, carrier 210 is taken out after completing DBR plated film, lower wax is carried out to the wafer 700 on carrier 210, passes through heating
Dissolving wax, separation wafer 700 and carrier 210；
S6, wafer 700 is cut into core particles again.
Embodiment 2
Referring to Fig. 3 ~ 4, the present embodiment provides a kind of LED chip making apparatus, including cavity 100, carrying tray fixing device
200, guide rail 300, DBR target 400, heating device 500 and vacuum evacuation device 600.One carrier 210,210 table of carrier are provided
Face is by the fixed wafer 700 of adhesion technique, wherein carrying tray fixing device 200 and guide rail 300 cooperate, for fixing carrier
210, by movement of the carrying tray fixing device 200 on guide rail 300, the charging of carrier 210 and discharging, the present embodiment is driven to hold
Load plate 210 is Si disk, is also possible to SiC disk.When work, the temperature in cavity 100 is heated to 120 DEG C by heating device 500, is removed
Water in wet steam cavity 100, vacuum evacuation device 600 are removed the gas in cavity 100 by pipeline 610, then DBR target
The 400 700 sputter DBR film of wafer on carrier 210, the direction of arrow is the direction of DBR sputter in Fig. 3.Compared to implementation
Example 1, the present embodiment making apparatus is mainly characterized in that carrier 210 is the upward vertical placement of wafer 700, opposite using Si disk
Ceramic disk is more light, and operator is facilitated to use.
The present embodiment chip manufacturing process, comprising steps of
S1, a wafer 700 is provided, wafer 700 includes successively substrate 710, functional layer 720, and functional layer 720 includes: p-type
Layer, active layer, N-type layer are provided with P electrode in P-type layer, are provided with N electrode in N-type layer；
S2, referring to Fig. 5, the one side of 700 non-substrate of wafer is fixed on carrier 210 by adhesion technique, use is resistance to
High temperature glue material 220, fusing point are not less than the maximum temperature of DBR plated film being applied in glue material 220, and fusing point is preferably 130 DEG C ~ 200
DEG C, the present embodiment uses fusing point for 180 DEG C of glue material 220；
S3, start grinding technics after terminating adhesion technique, by grinding wheel to the lining of the wafer 700 on carrier 210
Bottom 710 carries out thinning, then passes through the substrate 710 of polishing machine wafer polishing 700；
S4, after completing grinding technics, DBR is carried out to the wafer 700 on carrier 210 in DBR In-line cavity 100
Plated film is heated to 120 DEG C of dehumidifying to cavity 100, after removing 100 gas of cavity, may be selected to close heating device 500, in wafer
Sputter DBR reflective film on 700 substrates 710；
S5, carrier 210 is taken out after completing DBR plated film, separating technology is carried out to the wafer 700 on carrier 210, is passed through
Dissolve by heating high temperature resistant glue material 220, separation wafer 700 and carrier 210；
S6, wafer 700 is cut into core particles again.
Advantage of this embodiment is that not needing to heat when sputter, DBR target 400 is hit by inert gas, in high speed
Low temperature process carries out DBR plated film, and plated film is finer and close, and DBR film and the binding force of substrate 710 are stronger, while height temperate zone being avoided
Such as thermal stress it is disconnected brilliant or the problems such as material properties changes, have to the wax that carrier 210 and wafer 700 directly bond and protect
Shield effect.
The present embodiment and conventional die production method are compared, can simply be found out by experimental data referring to following table, this
Embodiment, which is significantly reduced, resolves brilliant exception.
Embodiment 3
Compared to Examples 1 and 2, the present embodiment is mainly improved in manufacture craft, after the completion of plated film without under
Ceroplastic directly cuts the wafer 700 on carrier 210, specifically, comprising steps of
S1, a wafer 700 is provided, wafer 700 successively includes substrate 710, P-type layer, active layer, N-type layer, is set in P-type layer
It is equipped with P electrode, is provided with N electrode in N-type layer；
S2, the one side of 700 non-substrate of wafer is fixed on carrier 210 by adhesion technique, using high temperature resistant wax or
Person's high temperature resistant glue material 220, fusing point are not less than the highest temperature of DBR plated film being applied in high temperature resistant wax or high temperature resistant glue material 220
Degree, preferably 130 ~ 200 DEG C, the present embodiment uses fusing point for 180 DEG C of high temperature resistant glue material 220；
S3, start grinding technics after terminating adhesion technique, the wafer 700 on carrier 210 is carried out by grinding wheel
Thinning then passes through polishing machine wafer polishing 700；
S4, after completing grinding technics, DBR is carried out to the wafer 700 on carrier 210 in DBR coating apparatus cavity 100
Plated film, heating cavity 100 dehumidify, through vacuum evacuation device 600 after the removal cavity gas of pipeline 610, in 700 substrate of wafer
Sputter DBR reflective film on 710；
After the completion of S5, DBR plated film, stealthy cutting is carried out to the wafer 700 on carrier 210, i.e., is drawn using invisible laser
Piece machine carries out stealthy cutting to the wafer 700 on carrier 210, and the material of carrier can use transparent material, translucent material
Material or opaque material improve the effect of backlight such as transparent material, for example use glass or SiO2；
S6, after completing cutting, lower wax is carried out to the wafer 700 on carrier 210, by dissolving by heating wax, separates wafer
700 with carrier 210, using breaking machine to wafer 700 carry out sliver.
Embodiment 4
Referring to Fig. 6, the present embodiment the difference from example 2 is that, using combined type cavity 100, while to multiple carryings
Disk 210 carries out DBR plated film, and carrying tray fixing device, DBR target can at least have two pairs, and the present embodiment is two carriers, two
A carrying tray fixing device and two DBR targets.To significantly improve working efficiency.
Above-described embodiment is only used to further illustrate the production method and its making apparatus of a kind of LED chip of the invention,
It is to the above embodiments according to the technical essence of the invention any simply to repair but the invention is not limited to embodiment
Change, equivalent variations and modification, falls within the scope of protection of technical solution of the present invention.
Claims (7)
1. a kind of production method of LED chip is used for LED chip processing procedure, step is included at least:
S1, a wafer is provided, wafer includes P-type layer, active layer, N-type layer；
S2, wafer are fixed on carrier by adhesion technique；
S3, thinning is carried out to the wafer on carrier；
S4, DBR plated film is carried out to the wafer on the carrier after step S3 thinning；
Carrier is taken out after S5, DBR plated film, separating technology is carried out to the wafer on carrier, separates wafer and carrier；
S6, wafer is cut into core particles again.
2. a kind of production method of LED chip is used for LED chip processing procedure, step is included at least:
S1, a wafer is provided, wafer includes P-type layer, active layer, N-type layer；
S2, wafer are fixed on carrier by adhesion technique；
S3, thinning is carried out to the wafer on carrier；
S4, DBR plated film is carried out to the wafer on the carrier after step S3 thinning；
Carrier is taken out after S5, DBR plated film, the wafer on carrier is cut into core particles；
S6, the wafer on carrier is separated, separates wafer and carrier.
3. a kind of production method of LED chip according to claim 1 or 2, which is characterized in that the adhesion technique uses
Wafer is fixed on carrier by high temperature resistant wax or high temperature resistant glue material.
4. a kind of production method of LED chip according to claim 3, which is characterized in that the high temperature resistant wax or resistance to height
Temperature bonding glue material fusing point is not less than the maximum temperature of DBR plated film.
5. a kind of production method of LED chip according to claim 1 or 2, which is characterized in that the carrier is ceramics
Disk, metal dish, SiO2One of disk, Si disk or SiC disk.
6. a kind of production method of LED chip according to claim 1 or 2, which is characterized in that the temperature of the DBR plated film
Degree is not more than 200 DEG C.
7. a kind of production method of LED chip according to claim 1 or 2, which is characterized in that the DBR plated film is to splash
Plating formula.
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| CN201610582087.7A CN106129220B (en) | 2016-07-22 | 2016-07-22 | A kind of production method and its making apparatus of LED chip |
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| CN201610582087.7A CN106129220B (en) | 2016-07-22 | 2016-07-22 | A kind of production method and its making apparatus of LED chip |
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| CN108110106B (en) * | 2017-12-14 | 2019-08-27 | 扬州乾照光电有限公司 | A kind of preparation method and LED chip of LED chip |
| CN112750921B (en) * | 2019-10-30 | 2022-03-11 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of gallium arsenide-based LED chip |
| CN114068767A (en) * | 2020-07-30 | 2022-02-18 | 山东浪潮华光光电子股份有限公司 | Manufacturing method of gallium arsenide-based LED (light-emitting diode) tube core |
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| JP2014011244A (en) * | 2012-06-28 | 2014-01-20 | Nitto Denko Corp | Led manufacturing method |
| CN103258773A (en) * | 2013-05-21 | 2013-08-21 | 合肥彩虹蓝光科技有限公司 | Semiconductor component coating film processing method |
| CN104037278B (en) * | 2014-06-27 | 2017-01-18 | 圆融光电科技有限公司 | Method for manufacturing LED chip and LED chip |
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