CN114068767A - Manufacturing method of gallium arsenide-based LED (light-emitting diode) tube core - Google Patents
Manufacturing method of gallium arsenide-based LED (light-emitting diode) tube core Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
The invention relates to a method for manufacturing a gallium arsenide-based LED tube core. The method comprises the manufacturing process of adopting a current expanding layer, a P-surface electrode, thinning, an N-surface electrode and cutting, wherein a pyrolytic film is attached to the front surface of a wafer which is subjected to P-surface manufacturing before the N-surface electrode is manufactured, the pyrolytic film is removed after the N-surface electrode is finished, and then rapid cutting is carried out. The invention not only avoids using cutting protection liquid, but also can not damage the chip electrode during cutting, thereby reducing the whole operation cost.
Description
Technical Field
The invention relates to a manufacturing method of a gallium arsenide-based LED (light-emitting diode) tube core, belonging to the technical field of semiconductor processing.
Background
A light Emitting diode (led) is a solid-state Electroluminescent (EL) semiconductor device that converts electrical energy into optical energy. The substantial core structure of the LED is a P-N section composed of III-IV group or III-V group compound materials in an element spectrum. The LED light radiation spectrum is distributed on one unique side. It is not monochromatic light (such as laser) nor broad-spectrum radiation (such as incandescent lamp), but is in between, with a bandwidth of tens of nanometers, with peak wavelengths in the visible or near infrared region. Compared with a common light source, the LED has the following advantages: 1. high efficiency: the LED lamp and the incandescent lamp with the same power have high luminous efficiency, and the LED lamp and the incandescent lamp have good lighting effects; 2. the service life is long: the longest service life of the LED lamp can reach 10 ten thousand hours, and the half-life cycle of the LED lamp can reach more than 5 ten thousand hours; 3. low power consumption: the electric quantity can be saved by more than 70% compared with an incandescent lamp with the same light effect; 4. low failure: the LED is used as a semiconductor element, sensitive parts such as a vacuum device, a high-voltage trigger circuit and the like are not arranged, and the failure rate is extremely low; 5. green and environment-friendly: the monochromaticity is good, the LED spectrum is concentrated, redundant infrared and ultraviolet lamp spectrums are not generated, the heat and radiation are little, the influence on the irradiated object is little, harmful substances such as mercury and the like are not contained, the waste can be recycled, and no pollution is caused; 6. the directivity is strong: plane light emitting, strong directivity; 7. quick response: the response time is short, only tens of nanoseconds, and the starting is very quick; 8. multi-color: the LED color, different semiconductor materials, different colors of light and color saturation can reach 130% of full color and different light colors, and a time sequence control circuit is utilized to achieve a colorful dynamic change effect.
The fabrication of the GaAs-based LED chip die structure is generally completed by growing a P-side electrode on the current spreading layer and growing an N-side electrode on the opposite side. There are generally two types of manufacturing processes, one is: current expanding layer-P surface electrode-thinning-N surface electrode-cutting; secondly, the following steps: current spreading layer-thinning-P-side electrode-N-side electrode-cutting. In any method, the electrode is manufactured at least once after thinning, so that the operation difficulty is high for the thinned wafer, and the wafer cracking is often more than 15%. The P-surface electrode material generally uses Cr, Ti, Al, Ni, Au, Pt, Ge and other metals, the gallium arsenide-based material is relatively fragile, the thickness of the chip is 120-180 mu m after thinning, the warpage of the chip is generally more than 10 mu m, and the high warpage can reach about 50 mu m, so that the chip is seriously warped when evaporating the N-surface electrode, the chip is easily cracked when the chip is operated back and forth during manufacturing, and the conventional N-surface metal manufacturing process generally adopts whole-surface evaporation or sputtering manufacturing, because of the warpage of the chip, a large gap exists between the chip and a chip carrying disc for placing the chip, in the manufacturing process, the metal material of the N-surface electrode is prevented from uniformly running onto the P surface of the chip, and particularly the P-surface electrode is easier to adsorb the metal particles. The gallium arsenide-based LED can easily adsorb chips after cutting due to the material reason of the P-surface electrode in the sawing and cutting process, and if more N-surface metal is adhered to the P-surface electrode in the N-surface manufacturing process, the surface of the P-surface metal is not flat, and the chips are easily adsorbed to pollute the surface of a chip. Usually, cutting protection liquid is adopted to reduce the pollution, but the use of the cutting protection liquid is cost increase, and in addition, the cutting protection liquid has great pollution to the environment and is more tedious in the treatment of subsequent wastewater.
Chinese patent document CN107118825A (201710123685.2) proposes a cutting protection solution and a cutting method for a light emitting diode, which mainly include: the cutting protection liquid comprises a nonionic surfactant, propylene glycol and water, wherein the mass fraction of the nonionic surfactant is 3-30%, the mass fraction of the propylene glycol is 5-35%, and the mass fraction of the water is 35-92%, in the process of cutting the light-emitting diode, the cutting protection liquid and deionized water are mixed for use, the deionized water can cool and clean a cutter wheel and a wafer, overheating of the cutter wheel or the wafer is avoided, the scrap nonionic surfactant and the propylene glycol are timely removed, the cutter wheel and the wafer can be lubricated in the cutting process, abrasion of the cutter wheel is reduced, meanwhile, the edge crack condition of a single LED can be reduced, and therefore the product yield is improved. However, the use and operation of the protective solution required in the operation process are more complicated, and the cost is higher.
Chinese patent document CN110459506A (201810428781.2) proposes a method for improving LED chip dicing contamination, which mainly includes: 1) half-cutting operation; 2) testing photoelectric parameters; 3) attaching the fabric on a blue film through a film sticking machine; 4) baking is carried out; 5) carrying out full cutting operation; 6) pure water is used for soaking all tube cores; 7) performing high-pressure cleaning; 8) and (5) performing membrane expansion. The chip is soaked in the container with pure water, and the pure water in the container is over the pipe core, so that the chip is prevented from being exposed in air, and the reaction between air and water and metal electrode is prevented by isolating the contact with air, and the red edge pollution of the pipe core is avoided. The invention mainly utilizes an isolation cutting method to protect the surface, is suitable for short-time cutting operation with 2 inches and smaller sizes, and can damage metal due to the fact that the cutting process of universal 4-inch and 6-inch chips is longer, and chips which cannot be washed away in time on the surfaces of the chips can continuously react with metal electrodes.
CN109994576A A GaAs based LED die manufacturing method, including the following steps: a) thinning the back of the gallium arsenide-based LED wafer with the epitaxial layer; b) evaporating and plating a GaAs substrate on the back of the thinned LED wafer into an N-surface electrode by using a Ni material and an Au material under a vacuum environment by using an electron beam evaporation table under a normal temperature condition; c) placing the wafer into an electron beam evaporation table, and heating and evaporating a layer of cesium chloride film on the front surface of the LED wafer under vacuum regulation; d) making a P electrode mask pattern; e) manufacturing an ohmic contact layer and a P electrode; g) and performing a tube core cutting operation on the LED wafer by using a saw machine to obtain the tube core after the segmentation is finished. The entire die structure is fabricated without the use of an etching-type solution. Although the technical solution provided in the patent document can avoid the problem of dicing contamination, the heating evaporation of the cesium chloride film increases the cycle time of the whole process and increases the manufacturing cost of the LED die.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a manufacturing method of a gallium arsenide-based LED tube core. The invention not only avoids using cutting protection liquid, but also can not damage the chip electrode during cutting, thereby reducing the whole operation cost. In fact, the method is a manufacturing method of the gallium arsenide-based LED tube core which avoids pollution and improves the process yield.
Description of terms;
wafer: the gallium arsenide-based LED chip is referred to, and the "chip" in this specification has the same meaning as the "gallium arsenide-based LED chip";
front side of the wafer: refers to the P side of the wafer;
back side of the wafer: refers to the other side opposite to the P side;
thinning: grinding the substrate on the back of the wafer to a specified thickness after the active surface of the wafer is manufactured;
ITO current spreading layer: indium tin oxide film grown in the light emitting area of the tube core;
MQW quantum well layer: a potential well layer on a microscopic scale comparable to the de broglie wavelength of the electrons;
normal temperature: ambient temperatures as described herein have meanings well known in the art and are generally at 25 + -2 deg.C (23 deg.C-27 deg.C).
The technical scheme of the invention is as follows:
a method for manufacturing gallium arsenide-based LED tube core includes such steps as using current spreading layer-P surface electrode-thinning-N surface electrode-cutting, attaching pyrolytic film to front surface of P surface wafer before N surface electrode is manufactured, removing pyrolytic film after N surface electrode is finished, and cutting quickly.
In more detail, a method for manufacturing a gallium arsenide-based LED die comprises:
(1) manufacturing and thinning a P surface of a gallium arsenide-based LED tube core structure;
(2) attaching a pyrolytic film to the front side of the wafer finished in the step (1);
(3) manufacturing an N-face electrode, wherein the temperature is controlled in the manufacturing process so that the surface temperature of the wafer does not exceed 30 ℃;
(4) removing the pyrolytic film;
(5) a rapid cutting step:
and (3) attaching the back of the wafer which is finished in the step (4) to a disintegrating ring with a blue film, placing the wafer attached to the disintegrating ring in a saw blade machine for rapid cutting, wherein the cutting speed is 50000 rpm-60000 rpm, cleaning the surface of the cut wafer, and expanding the film to form a single tube core with a proper distance.
The gallium arsenide-based LED die structure P surface manufacturing step can adopt the prior art. The following protocol is preferred:
step (1), manufacturing a P surface of a gallium arsenide-based LED tube core structure: growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; and then, manufacturing a photoresist mask pattern on the surface of the wafer on which the ITO film layer grows, growing a P-side metal electrode in an electron beam evaporation or sputtering evaporation mode, manufacturing a patterned metal electrode, and thinning the LED wafer after the electrode is finished. Wherein the content of the first and second substances,
and an epitaxial buffer layer, an N-type gallium arsenide layer, an MQW quantum well layer, a P-type AlGaInP layer and a P-type gallium arsenide layer are sequentially grown on the surface of the gallium arsenide-based LED wafer with the epitaxial layer.
The patterned metal electrode can be prepared by a conventional method in the art, such as a lift-off method, or by directly growing a metal film layer and then etching the metal film layer by means of photoresist protection.
The P-surface electrode structure is a conventional electrode structure, and is preferably a metal electrode structure which is manufactured in a mode that Cr, Ni, Ge, Ti, Pt and Au are used as a bottom layer and a transition layer, and metal Al, Au and the like are used as a top layer main electrode.
According to the present invention, the operation of attaching the pyrolytic film in the step (2) is preferably: and (3) placing the wafer finished in the step (1) on an adsorption platform with the front side upward, adsorbing the wafer, and attaching a pyrolytic film to the front side of the wafer, wherein the size of the pyrolytic film is consistent with that of the wafer. When the wafer is adsorbed, the suction force of the platform is proper (controlled by the ventilation size) so as to ensure the integral smoothness of the wafer, so that the wafer can not be cracked when the film is pasted on the pyrolytic film, and the pyrolytic film covers the whole wafer.
The manufacturing steps of the N-side electrode can adopt the prior art. The following protocol is preferred:
and (3) manufacturing an N-surface electrode, namely placing the wafer finished in the step (2) on a wafer carrying disc with the substrate surface facing upwards, and loading the wafer into an evaporation table or a sputtering table to manufacture the N-surface electrode. The N-side electrode is manufactured in an evaporation or sputtering mode, the N-side metal electrode covers the back of the whole wafer, and the surface temperature of the wafer is not more than 30 ℃ by cooling and temperature control in the manufacturing process so as to prevent the pyrolysis film from being partially pyrolyzed due to overhigh temperature.
The N-face electrode in the step (3) is of a conventional electrode structure; preferably, the electrode structure is made of a metal such as Ni, Ge, Au, Pt, or the like.
According to the invention, the step (4) of removing the pyrolytic film comprises the following steps: and (4) placing the wafer covered with the pyrolytic film in the step (3) with the P side facing downwards on a hot plate, keeping the temperature for 3-8min, preferably 5min, and removing the pyrolytic film. Further preferably, the constant temperature of the hot plate is 140-160 ℃, most preferably 150 ℃.
According to the invention, in the step (5), the diamond knife is used for cutting the saw blade, and deionized water is used for cooling the knife flywheel in the cutting process. Further preferably, the flow rate of the deionized water is 3-5L/min, and the water pressure is 0.4-0.6 MPa.
Preferably, in step (5), the feed speed of the blade wheel of the saw blade is 20-60 mm/s. According to the invention, the cutter wheel is used for cutting, so that the cutter breakage phenomenon can not occur at the cutter speed, and the rapid cutting can be ensured.
Preferably, in step (5), the wafer cleaning surface is a surface cleaning surface of the wafer after cutting in a cleaning machine. Preferably, the cleaning machine is a DCS1440 cleaning machine of DISCO, the cleaning time is 1-3min, the water pressure is 0.4-0.6MPa, and the rotating speed of the carrying disc is 3500-4000 rpm.
The invention has the technical characteristics and beneficial effects that:
1. the key technical characteristic of the invention is that the whole P-face electrode is adhered (sealed) by using the pyrolytic film before the N-face electrode is manufactured, so that the warping problem of the thinned wafer can be avoided, the integral thickness of the bonded wafer is increased due to the thickness and hardness of the material of the pyrolytic film, and the bonded wafer is not easy to crack due to the change of the adhered material. On the other hand, the whole P face is covered by the pyrolytic film, and all film material particles in the process of N face metal evaporation only can cover the pyrolytic film and cannot enter the P face metal and the light emitting region, so that the pyrolytic film is only required to be removed after the N face electrode is manufactured and before cutting, and electrochemical corrosion pollution caused by Ro water (reverse osmosis water) mixing when multiple metal materials are gathered and cut on the P face is avoided. The die surface is less prone to particle adsorption, thereby reducing the likelihood of dicing contamination.
2. The invention uses the mode of thinning after use, and the P-surface electrode is manufactured before thinning, thereby avoiding the possibility of electrode splintering after thinning, greatly reducing the risk of manufacturing process and improving the yield of the manufacturing process.
3. The adoption of the rapid cutting technology is also very important, and the current industry generally limits the cutting speed to below 45000rpm due to the consideration of the problems of chip pollution, adhesion and cooling in the cutting process. The invention solves the pollution possibility by using the pyrolytic film to cover, and can realize the fast cutting of 45000rpm on the basis of solving the cooling problem of the cutting knife wheel. The cutting speed of the cutter wheel is controlled to be 20-60mm/s, so that the high-speed cutting at the speed of 50000-60000 rpm can be realized, the cutting efficiency is greatly improved, and the cutting yield is ensured.
4. The method does not use cutting protection liquid, has simple and easy operation process, does not need to introduce special equipment, is completely manufactured by using conventional equipment, utilizes lower cost, solves the problems of easy splintering and cutting pollution after thinning and electrochemical corrosion in cutting, and is suitable for cutting and manufacturing all GaAs-based LED wafers.
Drawings
FIG. 1 is a schematic view of a GaAs-based LED wafer with an epitaxial layer and a current spreading layer grown thereon;
FIG. 2 is a schematic structural diagram of an LED wafer with P electrodes fabricated;
FIG. 3 is a schematic structural view of an LED wafer after thinning;
FIG. 4 is a schematic view of a wafer structure in which an LED wafer is thinned and an N-side electrode is grown;
FIG. 5 is a schematic structural view of an N-side wafer with a pyrolytic film attached thereon;
wherein: 1 is a substrate; 2 is an epitaxial layer; 3 is a current spreading layer; 4 is a P-face electrode; 5 is an N-face electrode; 6 is a wafer carrying disc for fixing the wafer; 7 is a pyrolytic film; 8 is an LED wafer with N-side up; and 9 is the movement direction of metal ions in the process of manufacturing the N-surface metal.
FIG. 6 is a photograph (1000 times microscope) of the P-side of the substrate of example 1 after the N-side electrode was formed and the pyrolytic film was removed;
FIG. 7 is a photograph (1000 times microscope) of a GaAs based LED die fabricated in example 2.
Detailed Description
The present invention will be further described with reference to the following examples and drawings, but is not limited thereto.
In the embodiment, an epitaxial buffer layer, an N-type gallium arsenide layer, an MQW quantum well layer, a P-type AlGaInP layer and a P-type gallium arsenide layer are sequentially grown on the surface of the gallium arsenide-based LED wafer with the epitaxial layer grown in the GaAs-based LED die.
The wafers cut in the examples and comparative examples were cleaned and dried by a conventional method. The cleaning machine is a DCS1440 cleaning machine of DISCO, the cleaning time is 2-3min, the water pressure is 0.4-0.6MPa, and the rotating speed of the carrying disc is 3500-4000 rpm.
The pyrolytic film in the examples is a totally known pyrolytic double-sided film, model UW-1978F.
Example 1: manufacturing GaAs-based red light LED tube core
(1) Gallium arsenide-based LED tube core structure P-surface manufacturing and thinning
Growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; then, a photoresist mask pattern is manufactured on the surface of the wafer on which the ITO film layer grows, the conventional P-surface metal electrode grows in an electron beam evaporation or sputtering evaporation mode, a patterned metal electrode is manufactured, and the wafer after the electrode is finished is thinned; the P-surface metal electrode structure is as follows: CrTiPtAu-600/1000/3000/30000 angstroms.
(2) And (3) placing the wafer finished in the step (1) on an adsorption platform with the front side upward, adsorbing the wafer, and attaching a pyrolytic film to the front side of the wafer, wherein the size of the pyrolytic film is consistent with that of the wafer. When the wafer is required to be adsorbed, the suction force of the platform is controlled to be moderate through the ventilation size, the integral smoothness of the wafer is guaranteed, the cracking of the wafer can not be caused when the pyrolytic film is pasted on the film, and the whole wafer is covered by the pyrolytic film.
(3) And (3) placing the wafer finished in the step (2) on a slide glass tray, enabling the N surface to face upwards, loading the wafer into an evaporation table, and performing evaporation on an N surface electrode, wherein the structure of the N electrode is NiGeAu-200/500/5000 angstroms. And the evaporation adopts normal-temperature evaporation. Controlling the temperature to ensure that the surface temperature of the wafer does not exceed 30 ℃ and preventing the pyrolysis film from pyrolyzing.
(4) And (4) placing the P surface of the wafer covered with the pyrolytic film prepared in the step (3) downwards on a hot plate, keeping the temperature for 5min, and removing the pyrolytic film, wherein the temperature of the hot plate is 150 ℃. The photo of the P surface after the pyrolytic film is removed is shown in figure 1, and no metal material is gathered and corrosion pollution is caused.
(5) A rapid cutting step: and (3) sticking the back of the wafer finished in the step (4) on a disintegrating ring with a blue film, placing the wafer stuck on the disintegrating ring in a saw blade machine for rapid cutting, wherein the feed speed of a cutter wheel is 40mm/s, the cutter speed is 55000rpm, deionized water is used for cooling the cutter wheel in the cutting process, the flow of the deionized water is 4L/min, and the water pressure is 0.5 MPa. And cleaning the surface of the wafer after cutting, and forming single dies with proper intervals by using the expanded film.
Example 2:
(1) gallium arsenide-based LED tube core structure P-surface manufacturing and thinning
Growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; then, a photoresist mask pattern is manufactured on the surface of the wafer on which the ITO film layer grows, the conventional P-surface metal electrode grows in an electron beam evaporation or sputtering evaporation mode, a patterned metal electrode is manufactured, and the wafer after the electrode is finished is thinned; the P-surface metal electrode structure is as follows: TiAl 1500/40000 angstroms.
(2) And (3) placing the wafer finished in the step (1) on an adsorption platform with the front side facing upwards, adsorbing the wafer, attaching a pyrolytic film to the front side of the wafer, wherein the size of the pyrolytic film is consistent with that of the wafer, and covering the whole wafer. The suction force of the control platform is moderate, and the integral smoothness of the wafer is ensured.
(3) And (3) placing the wafer finished in the step (2) on a slide glass tray, enabling the N surface to face upwards, loading the wafer into an evaporation table, and performing evaporation on an N surface electrode, wherein the structure of the N electrode is Au/Ge/Au (50/200/3000 angstroms), and the evaporation is performed at normal temperature. The temperature is controlled so that the surface temperature of the wafer does not exceed 30 ℃.
(4) And (4) placing the P surface of the wafer covered with the pyrolytic film prepared in the step (3) downwards on a hot plate, keeping the temperature for 5min, and removing the pyrolytic film, wherein the temperature of the hot plate is 145 ℃.
(5) A rapid cutting step: and (3) attaching the back of the wafer finished in the step (4) to a disintegrating ring with a blue film, placing the wafer attached to the disintegrating ring in a saw blade machine for rapid cutting, wherein the feed speed of a cutter wheel is 50mm/s, the cutter speed is 60000rpm, deionized water is used for cooling the cutter wheel in the cutting process, and further optimization is carried out, the flow of the deionized water is 5L/min, and the water pressure is 0.6 MPa. And cleaning the surface of the wafer after cutting, and forming single dies with proper intervals by using the expanded film.
Comparative example 1: traditional tube core making and cutting process
The gallium arsenide-based LED chip, the P-side metal electrode, the N-side electrode, and the like are the same as those in example 1.
(1) Growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; then, a photoresist mask pattern is manufactured on the surface of the wafer on which the ITO film layer grows, the conventional P-surface metal electrode grows in an electron beam evaporation or sputtering evaporation mode, a patterned metal electrode is manufactured, and the wafer after the electrode is finished is thinned;
(2) and (3) placing the wafer finished in the step (1) on a slide glass tray, wherein the N surface faces upwards, loading the wafer into an evaporation table, and performing N-surface electrode evaporation, wherein the evaporation adopts normal-temperature evaporation.
(3) Cutting: and (3) attaching the back of the wafer finished in the step (4) to a disintegrating ring with a blue film, placing the wafer attached to the disintegrating ring in a saw blade machine for rapid cutting, wherein the cutting speed is 45000rpm, cleaning the surface of the cut wafer, and expanding the film to form a single tube core with a proper interval.
Comparative example 2: current expanding layer-thinning-P surface electrode-N surface electrode-cutting process
The gallium arsenide-based LED chip, the P-side metal electrode, the N-side electrode, and the like are the same as those in example 1.
(1) Growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; then thinning the back of the wafer; then, a photoresist mask pattern is manufactured on the surface of the wafer on which the ITO film layer grows, the conventional P-surface metal electrode grows in an electron beam evaporation or sputtering evaporation mode, and a patterned metal electrode is manufactured;
(2) and (3) placing the wafer finished in the step (1) on a slide glass tray, wherein the N surface faces upwards, loading the wafer into an evaporation table, and performing N-surface electrode evaporation, wherein the evaporation adopts normal-temperature evaporation.
(3) Cutting: and (3) attaching the back of the wafer finished in the step (4) to a disintegrating ring with a blue film, placing the wafer attached to the disintegrating ring in a saw blade machine for rapid cutting, wherein the cutting speed is 40000rpm, cleaning the surface of the cut wafer, and expanding the film to form single dies with proper intervals.
Experimental example:
and fixedly manufacturing 500 wafers in each experiment until the cutting is finished, counting the number of splinters and the number of pollutants, and counting by taking the wafers as units.
The method of the embodiment 1 and the embodiment 2 and the method of the comparative example 1 and the comparative example 2 are respectively adopted to manufacture GaAs-based LED tube cores, 500 tube cores are manufactured for measurement and statistics, and the color difference can be obviously seen when the wafer is polluted and observed under a microscope by 10 x 5 times; the number of the splinters is determined by that if each splinter has cracks, the splinter is not counted.
TABLE 1
| Manufacturing process | Manufacturing quantity/piece | Wafer contamination count/wafer | Proportion of pollution | Number of splinters/piece | Rate of splintering |
| Example 1 | 500 | 0 | 0 | 3 | 0.6％ |
| Example 2 | 500 | 0 | 0 | 2 | 0.4％ |
| Comparative example 1 | 500 | 71 | 14.2％ | 4 | 0.8％ |
| Comparative example 2 | 500 | 67 | 13.4％ | 56 | 11.2％ |
Claims (10)
1. A method for manufacturing gallium arsenide-based LED tube core includes such steps as using current spreading layer-P surface electrode-thinning-N surface electrode-cutting, attaching pyrolytic film to front surface of P surface wafer before N surface electrode is manufactured, removing pyrolytic film after N surface electrode is finished, and cutting quickly.
2. The method of fabricating a gallium arsenide based LED die of claim 1, comprising:
(1) manufacturing and thinning a P surface of a gallium arsenide-based LED tube core structure;
(2) attaching a pyrolytic film to the front side of the wafer finished in the step (1);
(3) manufacturing an N-face electrode, wherein the temperature is controlled in the manufacturing process so that the surface temperature of the wafer does not exceed 30 ℃;
(4) removing the pyrolytic film;
(5) a rapid cutting step: and (3) attaching the back of the wafer which is finished in the step (4) to a disintegrating ring with a blue film, placing the wafer attached to the disintegrating ring in a saw blade machine for rapid cutting, wherein the cutting speed is 50000 rpm-60000 rpm, cleaning the surface of the cut wafer, and expanding the film to form a single tube core with a proper distance.
3. The method of manufacturing a gallium arsenide based LED die of claim 1, wherein step (1) the gallium arsenide based LED die structure is manufactured on P-plane: growing an ITO current expansion layer on the surface of the gallium arsenide-based LED wafer with the epitaxial layer, so that an ITO film layer covers the surface of the whole wafer; and then, manufacturing a photoresist mask pattern on the surface of the wafer on which the ITO film layer grows, growing a P-side metal electrode in an electron beam evaporation or sputtering evaporation mode, manufacturing a patterned metal electrode, and thinning the LED wafer after the electrode is finished.
4. The method of claim 1, wherein the step (2) of attaching the pyrolytic film comprises: and (3) placing the wafer finished in the step (1) on an adsorption platform with the front side upward, adsorbing the wafer, and attaching a pyrolytic film to the front side of the wafer, wherein the size of the pyrolytic film is consistent with that of the wafer.
5. The method for manufacturing the GaAs-based LED die of claim 1, wherein in the step (3), the N-side electrode is manufactured by placing the wafer finished in the step (2) on a wafer carrying disc with the substrate facing upwards and loading the wafer into an evaporation table or a sputtering table for manufacturing the N-side electrode.
6. The method of claim 1, wherein the step (4) of removing the pyrolytic film comprises: and (4) placing the wafer covered with the pyrolytic film in the step (3) with the P surface facing downwards on a hot plate for 3-8min at constant temperature, and removing the pyrolytic film.
7. The method for manufacturing the GaAs-based LED die as claimed in claim 6, wherein the constant temperature of the hot plate is 140 ℃ and 160 ℃, preferably 150 ℃.
8. The method of claim 1, wherein in step (5), a diamond knife is used to cut the gallium arsenide based LED die, and deionized water is used to cool the cutter wheel during the cutting process; preferably, the flow rate of the deionized water is 3-5L/min, and the water pressure is 0.4-0.6 MPa.
9. The method of claim 1 or 8, wherein in step (5), the saw blade wheel feed speed is 20-60 mm/s.
10. The method of manufacturing a gallium arsenide based LED die of claim 1, wherein in step (5), the wafer cleaning surface is a surface cleaning by placing the cut wafer in a cleaning machine; the cleaning time is 1-3min, the water pressure is 0.4-0.6MPa, and the rotating speed of the carrying disc is 3500 and 4000 rpm.
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