CN106129203A - 一种紫外led倒装芯片 - Google Patents

一种紫外led倒装芯片 Download PDF

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Publication number
CN106129203A
CN106129203A CN201610739702.0A CN201610739702A CN106129203A CN 106129203 A CN106129203 A CN 106129203A CN 201610739702 A CN201610739702 A CN 201610739702A CN 106129203 A CN106129203 A CN 106129203A
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CN
China
Prior art keywords
chip
transparent electrode
electrode layer
type gan
ito
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Pending
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CN201610739702.0A
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English (en)
Inventor
易翰翔
罗长得
武杰
郝锐
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Guangdong Deli Photoelectric Co ltd
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Guangdong Deli Photoelectric Co ltd
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Priority to CN201610739702.0A priority Critical patent/CN106129203A/zh
Publication of CN106129203A publication Critical patent/CN106129203A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

本发明公开了一种紫外LED倒装芯片，包括衬底，所述衬底上依次设置有N型GaN层、量子阱有源区、P型GaN层，所述P型GaN层上设置有透明电极层，所述透明电极层为ITO，所述透明电极层上开设有多个微孔。本发明提供的紫外LED倒装芯片在ITO层上开设有多个微孔，紫外光可通过微孔透射出去，减少ITO对紫外光的吸收，使利用紫外光的LED芯片能有效发挥作用。

Description

一种紫外LED倒装芯片
技术领域
本发明涉及LED芯片领域，具体涉及一种紫外LED倒装芯片。
背景技术
现有的LED芯片上都设置有ITO作为透明电极层，进行均匀导电，但是ITO对紫外光具有较强的吸收作用，影响紫外LED芯片发挥作用。
发明内容
为了解决上述技术问题，本发明的目的在于提供一种紫外LED倒装芯片。
本发明所采用的技术方案是：
一种紫外LED倒装芯片，包括衬底，所述衬底上依次设置有N型GaN层、量子阱有源区、P型GaN层，所述P型GaN层上设置有透明电极层，所述透明电极层为ITO，所述透明电极层上开设有多个微孔。
进一步，所述衬底为蓝宝石。
本发明的有益效果是：
与现有的LED芯片相比，本发明提供的紫外LED倒装芯片在ITO层上开设有多个微孔，紫外光可通过微孔透射出去，减少ITO对紫外光的吸收，使利用紫外光的LED芯片能有效发挥作用。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单说明。显然，所描述的附图只是本发明的一部分实施例，而不是全部实施例，本领域的技术人员在不付出创造性劳动的前提下，还可以根据这些附图获得的其他设计方案和附图：
图1是本发明的LED芯片的结构示意图。
图2是ITO层的俯视图。
具体实施方式
以下将结合实施例和附图对本发明的构思、具体结构及产生的技术效果进行清楚、完整地描述，以充分地理解本发明的目的、特征和效果。显然，所描述的实施例只是本发明的一部分实施例，而不是全部实施例，基于本发明的实施例，本领域的技术人员在不付出创造性劳动的前提下所获得的其他实施例，均属于本发明保护的范围。
参照图1，本发明提供了一种紫外LED倒装芯片，包括蓝宝石衬底1，所述衬底1上依次设置有N型GaN层2、量子阱有源区3、P型GaN层4，所述P型GaN层4上设置有透明电极层5，所述透明电极层5为ITO。参照图2，所述透明电极层5上开设有多个微孔6，优选地，微孔6均匀设置在电极层5的四周靠近边缘侧；另一种方案，微孔6均匀布置在整个电极层5上，进一步提高紫外光的透光效果。
以上具体结构和尺寸数据是对本发明的较佳实施例进行了具体说明，但本发明创造并不限于所述实施例，熟悉本领域的技术人员在不违背本发明精神的前提下还可做出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (2)

1.一种紫外LED倒装芯片，包括衬底（1），所述衬底（1）上依次设置有N型GaN层（2）、量子阱有源区（3）、P型GaN层（4），所述P型GaN层（4）上设置有透明电极层（5），所述透明电极层（5）为ITO，其特征在于：所述透明电极层（5）上开设有多个微孔（6）。
2.根据权利要求1所述的一种紫外LED倒装芯片，其特征在于：所述衬底（1）为蓝宝石。
CN201610739702.0A 2016-08-26 2016-08-26 一种紫外led倒装芯片 Pending CN106129203A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610739702.0A CN106129203A (zh) 2016-08-26 2016-08-26 一种紫外led倒装芯片

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610739702.0A CN106129203A (zh) 2016-08-26 2016-08-26 一种紫外led倒装芯片

Publications (1)

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CN106129203A true CN106129203A (zh) 2016-11-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459658A (zh) * 2018-05-08 2019-11-15 山东浪潮华光光电子股份有限公司 一种P型GaN层的UV LED芯片及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1622353A (zh) * 2004-12-17 2005-06-01 北京工业大学 低接触电阻、低光吸收、全角高反射的led电极
CN101685842A (zh) * 2008-09-25 2010-03-31 晶元光电股份有限公司 光电半导体装置
CN104851946A (zh) * 2015-05-27 2015-08-19 合肥彩虹蓝光科技有限公司 一种高提取外量子效率的led芯片制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1622353A (zh) * 2004-12-17 2005-06-01 北京工业大学 低接触电阻、低光吸收、全角高反射的led电极
CN101685842A (zh) * 2008-09-25 2010-03-31 晶元光电股份有限公司 光电半导体装置
CN104851946A (zh) * 2015-05-27 2015-08-19 合肥彩虹蓝光科技有限公司 一种高提取外量子效率的led芯片制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459658A (zh) * 2018-05-08 2019-11-15 山东浪潮华光光电子股份有限公司 一种P型GaN层的UV LED芯片及其制备方法

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Application publication date: 20161116