CN106129034A - 一种用于半导体焊接的铜键合线及其制备方法 - Google Patents
一种用于半导体焊接的铜键合线及其制备方法 Download PDFInfo
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 57
- 239000010949 copper Substances 0.000 title claims abstract description 57
- 238000003466 welding Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000956 alloy Substances 0.000 claims abstract description 22
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 238000005275 alloying Methods 0.000 claims abstract description 5
- 239000000696 magnetic material Substances 0.000 claims abstract description 3
- 238000000137 annealing Methods 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 3
- 241000218202 Coptis Species 0.000 abstract description 5
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003064 anti-oxidating effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000011573 trace mineral Substances 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4557—Plural coating layers
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Abstract
一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：铜99.99%～99.9999%；银0.005～0.01%；铅0～0.0005%；磷0.0005～0.002%；所述铜合金还包括磁性材料：铁0.002～0.01%；钴0.002～0.01%；镍0.0001%～0.0005%。本发明生成的铜键合丝性能良好稳定，具有防氧化和抗电磁干扰的优点。采用这种合金成分的铜线，既可以提升铜线的延伸率，从而改善焊接效果，又具有比金线成本更低的优点；铁钴镍三种磁性元素的加入可以防止铜键合线之间相互的电磁干扰，有利于半导体封装的电信号传输。
Description
技术领域
本发明涉及半导体新材料技术领域，特别是涉及一种用于半导体焊接的铜键合线及其制备方法。
背景技术
在半导体IC封装中，芯片和引线框架（基板）的连接要靠引线来实现，这种引线大多采用纯金线。然而金是贵金属，随着金价不断上涨，使半导体器件的制造成本不断增加，为此需要寻找其他更适合的金属来替代金线材料。由于铜线具有导电性能好、低成本、最大允许电流高、高温下稳定性高等优点，人们采用铜线替代金线以降低材料成本。但铜线发延伸性及抗氧化性没有金线好，而且铜线的质量对焊接效率及效果影响较大，造成铜线与半导体器件金层或银层结合不好，难结合，拉力不够等问题。
现有技术中，为了改善铜线的性能而采用金和铜的合金材料，但金的含量大于15%，其虽然提高了铜线的延伸性，但可焊性能差，而且成本高。
发明内容
本发明的目的在于避免现有技术中的不足之处而提供一种焊接效果好、成本低的用于半导体焊接的铜线。
本发明的目的通过以下技术方案实现：
提供一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：
铜 99.99%～99.9999%；
银 0.005～0.01%；
铅 0～0.0005%；
磷 0.0005～0.002%；
其特征在于，所述铜合金还包括磁性材料：
铁 0.002～0.01%；
钴 0.002～0.01%；
镍 0.0001%～0.0005%。
本发明还提供了一种制备所述的用于半导体焊接的铜键合线的方法，其包括以下步骤：
1)、制作预合金和母合金：选定要加入的合金元素，99.99％以上的高纯铜制作预合金和母合金；
2)、熔铸：将99.99％的高纯铜，加入各种合金，熔铸成锭；
3)、拉丝：将锭先粗拉成直径为10mm的铜线，在经过中间慢拉和后期的细拉，最终拉伸支撑直径为20-50微米的铜线；
4)、退火：在惰性气体环境中进行热退火，退火温度为500-800℃；
5)、机械性能检测：检查产品是否符合要求的强度和延展性；
6)、绕线，分卷，入库。
本发明的有益效果：
本发明的一种用于半导体焊接的铜键合线，由含量大99.99%的铜和其他微量元素，经过熔炼、拉伸加工、退火热处理等工序制成直径为20-50μm的铜线。由于铜线的成分中铜含量大于99.99%，并控制其他微量元素的含量，采用这种合金成分的铜线，既可以提升铜线的延伸率，从而改善焊接效果，又具有比金线成本更低的优点；铁钴镍三种磁性元素的加入可以防止铜键合线之间相互的电磁干扰，有利于半导体封装的电信号传输。
具体实施方式
结合以下实施例对本发明作进一步说明。
实施例1
提供一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：
铜 99.99%～99.9999%；
银 0.005%；
铅 0%；
磷 0.0005%；
铁 0.002%；
钴 0.002%；
镍 0.0001%%。
实施例2
提供一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：
铜 99.99%～99.9999%；
银 0.01%；
铅 0.0005%；
磷 0.002%；
铁0.01%；
钴 0.01%；
镍 0.0005%。
实施例3
提供一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：
铜 99.99%～99.9999%；
银 0.01%；
铅 0.0001%；
磷 0.001%；
铁 0.005%；
钴 0.005%；
镍 0.0002%。
此外，本发明还提供了一种制备所述的用于半导体焊接的铜键合线的方法，其包括以下步骤：
1)、制作预合金和母合金：选定要加入的合金元素，99.99％以上的高纯铜制作预合金和母合金；
2)、熔铸：将99.99％的高纯铜，加入各种合金，熔铸成锭；
3)、拉丝：将锭先粗拉成直径为10mm的铜线，在经过中间慢拉和后期的细拉，最终拉伸支撑直径为20-50微米的铜线；
4)、退火：在惰性气体环境中进行热退火，退火温度为500-800℃；
5)、机械性能检测：检查产品是否符合要求的强度和延展性；
6)、绕线，分卷，入库。
最后应当说明的是，以上实施例仅用于说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。
Claims (2)
1.一种用于半导体焊接的铜键合线，所述铜键合线由铜合金材料制成，所述铜合金材料由以下重量百分比的原料制成：
铜 99.99%～99.9999%；
银 0.005～0.01%；
铅 0～0.0005%；
磷 0.0005～0.002%；
其特征在于，所述铜合金还包括磁性材料：
铁 0.002～0.01%；
钴 0.002～0.01%；
镍 0.0001%～0.0005%。
2.一种制备权利要求1所述的用于半导体焊接的铜键合线的方法，其包括以下步骤：
1)、制作预合金和母合金：选定要加入的合金元素，99.99％以上的高纯铜制作预合金和母合金；
2)、熔铸：将99.99％的高纯铜，加入各种合金，熔铸成锭；
3)、拉丝：将锭先粗拉成直径为10mm的铜线，在经过中间慢拉和后期的细拉，最终拉伸支撑直径为20-50微米的铜线；
4)、退火：在惰性气体环境中进行热退火，退火温度为500-800℃；
5)、机械性能检测：检查产品是否符合要求的强度和延展性；
6)、绕线，分卷，入库。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101489702A (zh) * | 2006-06-01 | 2009-07-22 | 古河电气工业株式会社 | 铜合金线材的制造方法及铜合金线材 |
| CN104073677A (zh) * | 2013-03-27 | 2014-10-01 | 株式会社神户制钢所 | Led的引线框用铜合金板条 |
| CN104299954A (zh) * | 2014-10-31 | 2015-01-21 | 木林森股份有限公司 | 一种用于半导体焊接的铜线 |
| CN105229181A (zh) * | 2013-05-24 | 2016-01-06 | 三菱综合材料株式会社 | 铜合金线 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101489702A (zh) * | 2006-06-01 | 2009-07-22 | 古河电气工业株式会社 | 铜合金线材的制造方法及铜合金线材 |
| CN104073677A (zh) * | 2013-03-27 | 2014-10-01 | 株式会社神户制钢所 | Led的引线框用铜合金板条 |
| CN105229181A (zh) * | 2013-05-24 | 2016-01-06 | 三菱综合材料株式会社 | 铜合金线 |
| CN104299954A (zh) * | 2014-10-31 | 2015-01-21 | 木林森股份有限公司 | 一种用于半导体焊接的铜线 |
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Application publication date: 20161116 |