CN106124046B - A kind of Jitter emulation mode of superconducting nano-wire single-photon detector - Google Patents
A kind of Jitter emulation mode of superconducting nano-wire single-photon detector Download PDFInfo
- Publication number
- CN106124046B CN106124046B CN201610405042.2A CN201610405042A CN106124046B CN 106124046 B CN106124046 B CN 106124046B CN 201610405042 A CN201610405042 A CN 201610405042A CN 106124046 B CN106124046 B CN 106124046B
- Authority
- CN
- China
- Prior art keywords
- jitter
- noise
- voltage pulse
- pulse signal
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 66
- 238000013461 design Methods 0.000 claims abstract description 9
- 239000011159 matrix material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 description 29
- 238000010586 diagram Methods 0.000 description 28
- 230000000630 rising effect Effects 0.000 description 8
- 238000004088 simulation Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 6
- 238000000342 Monte Carlo simulation Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001506 fluorescence spectroscopy Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4238—Pulsed light
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
The invention discloses a kind of Jitter emulation mode of superconducting nano-wire single-photon detector, the Jitter emulation mode comprises the following steps：Electrical noise and thermal noise are added in the electrothermic model of superconducting nano-wire single-photon detector, and generates multiple output voltage pulse signals；The equivalent wave filter of Design enlargement device, processing is filtered to output voltage pulse signal by the wave filter, obtains the numerical value of Jitter；Pass through the numerical computations Jitter of the Jitter.The present invention can simulate influence of the different noises for Jitter, including electrical noise, the radio frequency amplifier on bias current introduce electrical noise, the shake of underlayer temperature, the minor variations of nano wire space structure；The present invention can analyze the influence of different components parameter and test environment for Jitter, including kinetic energy inductance, the bandwidth of RF amplifiers, underlayer temperature, substrate and nano wire heat exchange coefficient, nanowire width and thickness and nano wire the defects of.
Description
Technical field
The present invention relates to single photon detection field, more particularly to a kind of Jitter of superconducting nano-wire single-photon detector
Emulation mode.
Background technology
Superconducting nano-wire single-photon detector (SNSPD) has had become superconducting electronics field since 2001 occur
A hot research direction.As a kind of new single-photon detecting survey technology, SNSPD have detection efficient is high, dark counting is low,
The advantages such as Jitter is small, counting rate is high, response spectrum is wide and circuit is simple.
Jitter is SNSPD important performance indexes, determines SNSPD time resolution.Such as in the time point
In the fluorescence spectrometry distinguished, SNSPD Jitter determines the most short fluorescence lifetime that can be measured；Based on Time-energy
In the higher-dimension quantum key distribution system tangled, Jitter influences the bit number that can be encoded in a photon；In Laser Measuring
Away from in optical time domain reflection system, Jitter influences range accuracy or spatial resolution；In the communication system of photon counting,
Jitter influences the bit error rate.
Superconducting nano-wire single-photon detector has remarkable performance in many aspects, it is not intended that superconducting nano
The theory of line single-photon detector is complete, especially, the important performance indexes as superconducting nano-wire single-photon detector
One of Jitter characteristic, all fail all the time by detailed elaboration, actually what factor and they how to influence to surpass
The problem of leading nanowire single photon detector time jitter is not answered also.
To be reported according to researchers, SNSPD Jitter scope all exists from less than 20ps to more than 100ps, even if
For the device on same chip, their Jitter is also not quite similar.Although researchers confirm that Jitter may
Come from exporting the shake of pulse amplitude, and known Jitter and electrical noise, amplifier bandwidth, bias current,
And the geometry of nano wire is relevant, but at present still lack a quantitative model come systematically analyze SNSPD when
Shake in domain.In summary, the Jitter progress in-depth study to SNSPD is imperative.
The content of the invention
The invention provides a kind of Jitter emulation mode of superconducting nano-wire single-photon detector, the present invention can be with mould
Intend influence of the different noises for Jitter；(2) shadow of different components parameter and test environment for Jitter is analyzed
Ring；(3) SNSPD Jitter of the emulation with special construction, helps to develop the panel detector structure of new low Jitter, in detail
See below description：
A kind of Jitter emulation mode of superconducting nano-wire single-photon detector, the Jitter emulation mode include
Following steps：
Electrical noise and thermal noise are added in the electrothermic model of superconducting nano-wire single-photon detector, and generates multiple outputs
Voltage pulse signal；
The equivalent wave filter of Design enlargement device, processing is filtered to output voltage pulse signal by the wave filter,
Obtain the numerical value of Jitter；
Pass through the numerical computations Jitter of the Jitter.
Wherein, described the step of electrical noise and thermal noise are added in the electrothermic model of superconducting nano-wire single-photon detector
Specially：
1) by bias current IbIt is changed into Ib+δIb(t), δ Ib(t) matrix for being n*m, each behavior one group of Gauss point of matrix
The array of cloth, its average are 0, and variance is σ Ib；
2) nanowire width w and thickness h are changed into w+ δ w (x) and h+ δ h (x) respectively, wherein δ w (x) and δ h (x) are similarly
N*m matrix, the array of one group of Gaussian Profile of each behavior of matrix, its average are 0, and variance is σ w and σ h；
3) by underlayer temperature TsubIt is changed into Tsub+δTsub(t), wherein δ Tsub(t) matrix for being 1*m, matrix is one group of Gauss
The array of distribution, its average are 0, and variance is σ T.
Wherein, the equivalent wave filter of the Design enlargement device, output voltage pulse signal is carried out by the wave filter
Filtering process, it is specially the step of the numerical value for obtaining Jitter：
1) sample frequency is set to and oscillograph identical sample rate；
2) Butterworth filter, the bandwidth with a width of amplifier are designed；Pulse signals enter row interpolation；
3) noise signal is amplified to original gain*NF times, the voltage pulse signal without noise is passed through into identical
Wave filter, then it is expanded to original gain times；
4) finally it is superimposed by the voltage pulse signal with noise, with the voltage pulse signal without noise, you can led to
The voltage pulse signal crossed after amplifier；
5) by aforesaid operations step by n pulse all by amplifier, believed with the voltage pulse passed through after amplifier
Number calculate Jitter numerical value.
The beneficial effect of technical scheme provided by the invention is：
1st, the present invention can simulate influence of the different noises for Jitter, including electrical noise on bias current,
The electrical noise of radio frequency amplifier introducing, the shake of underlayer temperature, the minor variations of nano wire space structure；
2nd, the present invention can analyze the influence of different components parameter and test environment for Jitter, including kinetic energy electricity
Heat exchange coefficient, nanowire width and the thickness and nanometer of sense, the bandwidth of RF amplifiers, underlayer temperature, substrate and nano wire
The defects of line；
3rd, the present invention can emulate the SNSPD Jitters with special construction, including but not limited to：Parallel-connection structure level
Receipts or other documents in duplicate photon detector (SNAP), binary tree structure SNAP；Help to develop the panel detector structure of new low Jitter.
Brief description of the drawings
Fig. 1 is a kind of flow chart of the Jitter emulation mode of superconducting nano-wire single-photon detector；
Fig. 2 is the schematic diagram that noise is added in electrothermic model；
Fig. 3 is the simulation result schematic diagram of single voltage pulse；
Fig. 4 is the schematic diagram for simulating the rising edge obtained after 4000 voltage pulses；
Fig. 5 is obtained Gaussian Profile statistical chart after carrying out statistical distribution to the arrival time of 4000 pulses；
Fig. 6 is Jitter and the schematic diagram of bias current noise change；
Fig. 7 is Jitter and the schematic diagram of noise figure of amplifier change；
Fig. 8 is Jitter and the schematic diagram of underlayer temperature change；
Fig. 9 is Jitter and the schematic diagram of bulk change；
Figure 10 is Jitter and the schematic diagram of kinetic energy inductance change；
Figure 11 is Jitter and the schematic diagram of normalized bias current change；
Figure 12 is Jitter and the schematic diagram of amplifier bandwidth change；
Figure 13 is Jitter and the schematic diagram of underlayer temperature change；
Figure 14 is Jitter and the schematic diagram of border heat exchange coefficient change；
Figure 15 is Jitter and the schematic diagram of nanometer line defect change；
Figure 16 is Jitter and the schematic diagram of nanowire thickness change；
Figure 17 is Jitter and the schematic diagram of nanowire width change；
Figure 18 is the schematic diagram that noise is added in the electrothermic model that parallel-connection structure cascades single-photon detector；
Figure 19 is the Jitter and the schematic diagram of width peak-to-peak value rate of change after addition noise；
Figure 20 is the Jitter and the schematic diagram of thickness peak-to-peak value rate of change after addition noise；
Figure 21 is the Jitter and the schematic diagram of nanowire width change added after noise；
Figure 22 is the Jitter and the schematic diagram of nanowire thickness change added after noise；
Figure 23 is the Jitter and the schematic diagram of amplifier bandwidth change added after noise；
Figure 24 is the Jitter and the schematic diagram of current noise difference standard deviation change added after noise；
Figure 25 is the Jitter and the schematic diagram of underlayer temperature change added after noise；
Figure 26 is the Jitter and the schematic diagram of substrate rate of heat exchange change added after noise；
Figure 27 is the Jitter and the schematic diagram of underlayer temperature peak-to-peak value change added after noise；
Figure 28 is the Jitter and the schematic diagram of noise coefficient change added after noise.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is made below further
It is described in detail on ground.
The embodiment of the present invention first adds noise in SNSPD electrothermic model, the reading circuit process signal then simulated,
The rising edge of pulse signal of Monte Carlo Method (the Monte Carlo method) simulation with noise is recycled, thus calculates time domain
Shake, is described in detail with reference to Fig. 1, described below：
Embodiment 1
A kind of Jitter emulation mode of superconducting nano-wire single-photon detector, referring to Fig. 1, the Jitter emulation side
Method comprises the following steps：
101：Electrical noise and thermal noise are added in the electrothermic model of superconducting nano-wire single-photon detector, and is generated multiple
Output voltage pulse signal；
102：The equivalent wave filter of Design enlargement device, processing is filtered to output voltage pulse signal by wave filter,
Obtain the numerical value of Jitter；
103：Pass through the numerical computations Jitter of Jitter.
Wherein, addition electrical noise and the heat in the electrothermic model of superconducting nano-wire single-photon detector in step 101 are made an uproar
The step of sound is specially：
1) by bias current IbIt is changed into Ib+δIb(t), δ Ib(t) matrix for being n*m, each behavior one group of Gauss point of matrix
The array of cloth, its average are 0, and variance is σ Ib；
2) nanowire width w and thickness h are changed into w+ δ w (x) and h+ δ h (x) respectively, wherein δ w (x) and δ h (x) are similarly
N*m matrix, the array of one group of Gaussian Profile of each behavior of matrix, its average are 0, and variance is σ w and σ h；
3) by underlayer temperature TsubIt is changed into Tsub+δTsub(t), wherein δ Tsub(t) matrix for being 1*m, matrix is one group of Gauss
The array of distribution, its average are 0, and variance is σ T.
Further, the equivalent wave filter of Design enlargement device in step 102, output voltage pulse is believed by wave filter
Number processing is filtered, is specially the step of the numerical value for obtaining Jitter：
1) sample frequency is set to and oscillograph identical sample rate；
2) Butterworth filter, the bandwidth with a width of amplifier are designed；Pulse signals enter row interpolation；
3) noise signal is amplified to original gain*NF times, the voltage pulse signal without noise is passed through into identical
Wave filter, then it is expanded to original gain times；
4) finally it is superimposed by the voltage pulse signal with noise, with the voltage pulse signal without noise, you can led to
The voltage pulse signal crossed after amplifier；
5) by aforesaid operations step by n pulse all by amplifier, believed with the voltage pulse passed through after amplifier
Number calculate Jitter numerical value.
In summary, the embodiment of the present invention is realized to superconducting nano-wire single photon by above-mentioned steps 101- steps 103
The Jitter emulation of detector, this method can simulate influence of the different noises for Jitter, meet actual answer
A variety of needs in.
Embodiment 2
The scheme in embodiment 1 is described in detail with reference to specific calculation formula, form, it is as detailed below to retouch
State：
201：Establish and solve SNSPD electrothermic model, simulate SNSPD output voltage signal waveform；
Wherein, the fundamental equation of SNSPD electrothermic model is：
Wherein, j is current density, and ρ is resistivity, and κ is the thermal conductivity of nano wire, and T is nano wire temperature, TsubFor substrate
Temperature, c are specific heat capacity, cbtFor electric capacity, LkFor dynamic inductance, RnFor nano wire all-in resistance, IbFor bias current, Z0For electricity in parallel
Resistance, h is nanowire thickness.X is the coordinate of certain point on nano wire, and border thermal conductivities of the α between nano wire and substrate, t is
Time, I be nano wire on electric current, the concrete numerical value such as table 1 of each parameter.
During specific implementation, the solution of SNSPD electrothermic model is based on eulerian difference method.Circulated using for, to each time
Step-length is solved, and under each time step, is solved each space by heat transfer formula (formula (1)) using for circulations and is walked
The temperature and critical current of nano wire corresponding to length, due to adding spatial variations, i.e. nanowire thickness h is changed into h+ δ h (x), received
Rice noodles width w is changed into w+ δ w (x), and the current density in heat transfer formula is different under different spatial mesh sizes.
After having updated temperature and critical current, judge whether the critical current after renewal has exceeded critical value, if exceeding,
Then nano wire corresponding to this spatial mesh size is changed into having resistance state；If not above still in superconducting state.Each time step is updated
Nano wire state after, calculate nanometer line resistance.
Because the resistance value of each step-length is relevant with space structure, therefore the resistance of each spatial mesh size is R=p*l/ ((w+ δ
W (x)) * (h+ δ h (x))), wherein l is spatial mesh size length；The resistance R of each spatial mesh size is added, that is, it is total to obtain nano wire
Resistance Rn.The electric current in nano wire is updated by electricity equation (i.e. formula (2)) again.The electricity in nano wire by calculating t durations
Rheology, finally give the voltage pulse of output.
The parameter list when electrothermic model of table 1 and addition noise post-simulation SNSPDs Jitters
Wherein, N.F. is noise coefficient, and Gain is amplifier gain, IswFor the superconduction critical electric current after limited, IcFor reason
Think superconduction critical electric current, fHAnd fLFor the upper cut off frequency and lower limiting frequency of amplifier, CnFor phonon specific heat, CeFor electronics ratio
Heat, w are nanowire width, TsubFor underlayer temperature, σwFor the standard deviation of width Gaussian Profile, σhFor the standard of thickness Gaussian Profile
Difference, σTFor the standard deviation of underlayer temperature Gaussian Profile, σIbFor the standard deviation of bias current Gaussian Profile.
202：Electrical noise and thermal noise are added in SNSPD electrothermic model, and generates multiple output voltage pulse signals；
The method that noise is added in electrothermic model is as shown in Figure 2.First in initiation parameter, by bias current Ib,
Nanowire width w, thickness h, underlayer temperature TsubA definite value is converted into by fixed value respectively and adds a stochastic variable.
Assuming that number of repetition is n times, the time step in each simulation process is δ t, a length of t during simulation, if m=t/ δ t.
Due to bias current IbChange frequency quickly, therefore when calculating each step-length, bias current IbIt will change, similarly, nano wire
Width w and nanowire thickness h change also very acutely, therefore each step-length will change, and the change of temperature be it is slow,
It is therefore assumed that during each pulse shaping, underlayer temperature TsubFor a definite value, specific method is：
1) by bias current IbIt is changed into Ib+δIb(t), δ Ib(t) matrix for being n*m, each behavior one group of Gauss point of matrix
The array of cloth, its average are 0, and variance is σ Ib；
2) nanowire width w and thickness h are changed into w+ δ w (x) and h+ δ h (x) respectively, wherein δ w (x) and δ h (x) are similarly
N*m matrix, the array of one group of Gaussian Profile of each behavior of matrix, its average are 0, and variance is σ w and σ h；
3) by underlayer temperature TsubIt is changed into Tsub+δTsub(t), wherein δ Tsub(t) matrix for being 1*m, matrix is one group of Gauss
The array of distribution, its average are 0, and variance is σ T.
During specific implementation, bias current I is definedbWhen, if normalized electric current Ib/IswFor definite value a, then Isw=Ic* C, C are
The defects of due to nano wire and electric current are caused by the concentration effect at nano wire turning, therefore Ib=Ic* C*a, IcFace for nano wire
Boundary's electric current.
4) add after random electrical noise and thermal noise, compute repeatedly electrothermic model, obtain multiple output voltage pulses
Signal.
203：The equivalent wave filter of Design enlargement device, believed by output voltage pulse of the wave filter of design to step 202
Number processing is filtered, obtains the numerical value of Jitter；
Because the characteristic of amplifier is voltage amplification and filtering, it is assumed that amplifier is gain to the multiplication factor of voltage, is made an uproar
Sonic system number is NF, and in order to obtain the voltage pulse signal after amplifier, the band that the embodiment of the present invention exports step 202 is made an uproar
The voltage pulse signal of sound is smoothed, the voltage pulse signal without noise after obtaining smoothly；By the electricity with noise
Pressure pulse signal, make the difference with the voltage pulse signal without noise, obtain the noise signal before input amplifier；Then incite somebody to action
To noise signal by being filtered by the equivalent wave filter of amplifier.Wherein, the detailed operation of step 203 is included in following
Hold：
1) firstly the need of the sample frequency for considering digital filter, this sample frequency is set to adopt with oscillograph identical
Sample rate；
2) filter design program and then using matlab carried designs a Butterworth filter, with a width of amplification
The bandwidth of device；Pulse signals enter row interpolation；
Because digital filter principle is discrete Fourier transform, and the sample rate of whole single photon detection experimental system compared with
Height, therefore spectral range is wider, in order to make spectrum intervals smaller, then the discrete points needed are more, and because the rising of amplifier
Shorter along the time, data volume very little, therefore will obtain accurate filter result, it is necessary to enter row interpolation to voltage pulse signal, this
Sample can just make that the spectrum intervals of voltage pulse signal frequency spectrum is smaller, and filter result is more accurate.
3) noise signal is amplified to original gain*NF times, the voltage pulse signal without noise is passed through into identical
Wave filter, then it is expanded to original gain times；
4) finally it is superimposed by the voltage pulse signal with noise, with the voltage pulse signal without noise, you can led to
The voltage pulse signal crossed after amplifier；
5) by aforesaid operations step by n pulse all by amplifier, believed with the voltage pulse passed through after amplifier
Number calculate Jitter numerical value.
That is, by the voltage pulse after amplifier it is the voltage pulse seen on final oscillograph.
204：Pass through the numerical computations Jitter of Jitter.
In summary, the embodiment of the present invention is realized to superconducting nano-wire single photon by above-mentioned steps 201- steps 204
The Jitter emulation of detector, this method can simulate influence of the different noises for Jitter, meet actual answer
A variety of needs in.
Embodiment 3
Feasibility checking is carried out to the scheme in Examples 1 and 2 with reference to specific experimental data, Fig. 2-Figure 28, in detail
See below description：
The simulation result of single voltage pulse is as shown in figure 3, Fig. 4 is to simulate the rising edge obtained after 4000 voltage pulses
Schematic diagram.In order to calculate SNSPD Jitter, count the peak value of whole n pulses and be averaged, by the half of average value
As threshold value, record each voltage pulse and rise to time t corresponding at threshold valuen, to n time tnStatistical is carried out in time domain
Cloth, obtained result carry out Gauss curve fitting again, you can obtain the value of the value of the full width at half maximum of Gaussian Profile, i.e. Jitter.Fig. 5
After carrying out statistical distribution to arrival times of 4000 pulses, obtained Gaussian Profile statistical chart, the value of Jitter is
39.2ps。
The electrothermic model added after noise provides research various noise, device parameters and a test environments for time domain
The method of the influence of shake.By the model, influence of each parameter for Jitter can be individually scanned, and then joined
The relation of number and Jitter.Fig. 6-Fig. 9 is the influence to Jitter on noise, and Jitter is with the electricity of bias current
Make an uproar (referring to Fig. 6) and the increase of the noise coefficient of amplifier (referring to Fig. 7) and increase, as σ TsubIt is several when changing to 0.6k from 0
Not with underlayer temperature TsubChange and change (referring to Fig. 8), with bulk change aggravation and it is small increase (referring to
Fig. 9).Figure 10-Figure 17 is the influence of device parameters and test environment for Jitter.Including kinetic energy inductance (referring to Figure 10),
Normalized bias current (referring to Figure 11), amplifier bandwidth (referring to Figure 12), underlayer temperature (referring to Figure 13), border heat exchange
Coefficient (referring to Figure 14), nanometer line defect (referring to Figure 15), nanowire thickness (referring to Figure 16) and nanowire width (referring to
Figure 17).Most of trend can be obtained by the influence and signal to noise ratio for analyzing their slopes to voltage pulse rising edge.Increase
Kinetic energy inductance adds the time constant of rising edge, therefore adds Jitter；Increase normalized bias current to add
Signal to noise ratio, therefore Jitter is reduced, this was proved by researcher before, it is notable that the present invention is implemented
Example is found that normalization bias current and C relation, and when C is closer to 1, influence of the normalization bias current to Jitter is got over
Small, just as shown in Figure 15, when normalizing bias current fixation, Jitter is gradually reduced as C increases, and reduce
Degree is gradually lowered.Similarly, increase noise coefficient adds the signal to noise ratio of system, therefore adds Jitter.Increase band
Width causes the climbing speed lifting of rising edge, therefore reduces Jitter (referring to Figure 12).Increase substrate temperature also just subtracts
The critical current of nano wire is lacked, causing the absolute value of bias current reduces, and the signal to noise ratio of system declines, therefore adds time domain
Shake is (referring to Figure 13).Increase border heat exchange coefficient the forming process of focus is slowed down, therefore add rising edge when
Between so that Jitter increases (referring to Figure 14).The thickness (referring to Figure 16) and width (referring to Figure 17) for increasing nano wire all make
Obtain critical current to rise, increase the heat exchange that nanowire thickness also reduces substrate and nano wire, therefore Jitter phase in addition
It should reduce.In addition, exemplified by cascading superconducting nano-wire single-photon detector (SNAP) emulation, it was demonstrated that this model can be used for counting
Calculate the Jitter of the single-photon detector of different structure (referring to Figure 18).SNAP can significantly improve the noise of read output signal
Than having outstanding performance.This model of the embodiment of the present invention, calculate SNAP Jitter, and its Jitter
With noise, the relation of device parameters and test environment.
Wherein, Figure 19-Figure 28 is the SNAP Jitter and noise, device obtained using the electrothermic model after noise is added
The relation of parameter and test environment.The change curve of Jitter and SNSPD curve are similar in Figure 19-Figure 28, show time domain
Shake with noise (electrical noise, thermal noise, spatial variations), noise parameter, temperature, thermal conductivity increase and increase, with width, thickness
Degree, bandwidth increase and reduce.
Because this model is using Monte Carlo Method (Monte Carlo method) simulation Jitter, therefore should calculate big
The voltage pulse of amount, so as to reduce the standard deviation of Jitter, obtain more accurate result.Trembled in simulation SNSPD time domain
Before dynamic, it should accurate measurement SNSPD noise size and device parameters.Wherein thermal parameters, such as border heat exchange coefficient, specific heat
Hold, can obtain accurately being worth as far as possible by searching pertinent literature.Electrical parameter and geometry, such as kinetic energy inductance, amplification
The value of device bandwidth and magnifying power, nanowire thickness and width and C, it can be measured by experiment.
To the model of each device in addition to specified otherwise is done, the model of other devices is not limited the embodiment of the present invention,
As long as the device of above-mentioned function can be completed.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Sequence number is for illustration only, does not represent the quality of embodiment.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (1)
1. a kind of Jitter emulation mode of superconducting nano-wire single-photon detector, it is characterised in that the Jitter is imitated
True method comprises the following steps：
Step 1: adding electrical noise and thermal noise in the electrothermic model of superconducting nano-wire single-photon detector, and generate multiple
Output voltage pulse signal；
Wherein, step 1 is specially：
1) by bias current IbIt is changed into Ib+δIb(t), δ Ib(t) matrix for being n*m, one group of Gaussian Profile of each behavior of matrix
Array, array average are 0, and variance is σ Ib；
2) nanowire width w and thickness h are changed into w+ δ w (x) and h+ δ h (x) respectively, wherein δ w (x) and δ h (x) are similarly n*m
Matrix, the array of one group of Gaussian Profile of each behavior of matrix, array average be 0, variance is σ w and σ h；
3) by underlayer temperature TsubIt is changed into Tsub+δTsub(t), wherein δ Tsub(t) matrix for being 1*m, matrix is one group of Gaussian Profile
Array, array average be 0, variance is σ T；
Step 2: the wave filter that Design enlargement device is equivalent, place is filtered by the wave filter to output voltage pulse signal
Reason, obtain the numerical value of Jitter；
Wherein, step 2 is specially：
(1) sample frequency is set to and oscillograph identical sample rate；
(2) Butterworth filter, the bandwidth with a width of amplifier are designed；Pulse signals enter row interpolation；
(3) noise signal is amplified to original gain*NF times, the voltage pulse signal without noise is filtered by identical
Device, then it is expanded to original gain times；
(4) finally it is superimposed by the voltage pulse signal with noise, with the voltage pulse signal without noise, you can obtain by putting
Voltage pulse signal after big device；
(5) by aforesaid operations step by n pulse all by amplifier, with passing through the voltage pulse signal meter after amplifier
Calculate the numerical value of Jitter；
Step 3: the numerical computations Jitter for passing through the Jitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610405042.2A CN106124046B (en) | 2016-06-07 | 2016-06-07 | A kind of Jitter emulation mode of superconducting nano-wire single-photon detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610405042.2A CN106124046B (en) | 2016-06-07 | 2016-06-07 | A kind of Jitter emulation mode of superconducting nano-wire single-photon detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106124046A CN106124046A (en) | 2016-11-16 |
| CN106124046B true CN106124046B (en) | 2018-01-12 |
Family
ID=57270312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610405042.2A Active CN106124046B (en) | 2016-06-07 | 2016-06-07 | A kind of Jitter emulation mode of superconducting nano-wire single-photon detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106124046B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110989767A (en) * | 2018-12-12 | 2020-04-10 | 苏州普源精电科技有限公司 | Interpolation method and device |
| CN112651111B (en) * | 2020-12-17 | 2022-09-09 | 武汉大学 | Electric heating process simulation method for superconducting nanowire single-photon detector |
| CN115579090B (en) * | 2022-11-09 | 2023-04-14 | 陕西科技大学 | Shell structure material classification method based on low-dimensional admittance characteristics |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103245424A (en) * | 2012-02-03 | 2013-08-14 | 中国科学院上海微系统与信息技术研究所 | Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system |
| CN103364079A (en) * | 2013-07-18 | 2013-10-23 | 南京大学 | Detection system and detection method of broadband fluorescent photons |
| CN105092711A (en) * | 2015-08-04 | 2015-11-25 | 哈尔滨工业大学 | Steel rail crack acoustic emission signal detecting and denoising method based on Kalman filtering |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9240539B2 (en) * | 2012-04-26 | 2016-01-19 | National Institute Of Standards And Technology | Efficient polarization independent single photon detector |
-
2016
- 2016-06-07 CN CN201610405042.2A patent/CN106124046B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103245424A (en) * | 2012-02-03 | 2013-08-14 | 中国科学院上海微系统与信息技术研究所 | Method and device for improving electrical interference resistance of SNSPD (Superconducting Nanowire Single Photon Detector) system |
| CN103364079A (en) * | 2013-07-18 | 2013-10-23 | 南京大学 | Detection system and detection method of broadband fluorescent photons |
| CN105092711A (en) * | 2015-08-04 | 2015-11-25 | 哈尔滨工业大学 | Steel rail crack acoustic emission signal detecting and denoising method based on Kalman filtering |
Non-Patent Citations (2)
| Title |
|---|
| Intrinsic timing jitter of superconducting nanowire single-photon detectors;Q. Zhao,L. Zhang等;《APPLIED PHYSICS B-LASERS AND OPTICS》;20110531;第104卷(第3期);673-678 * |
| 超导纳米线单光子探测系统的时间抖动;张文星等;《低温与超导》;20130424;第41卷(第4期);1-4,12 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106124046A (en) | 2016-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Humphreys et al. | Tomography of photon-number resolving continuous-output detectors | |
| Charakopoulos et al. | The application of complex network time series analysis in turbulent heated jets | |
| CN106124046B (en) | A kind of Jitter emulation mode of superconducting nano-wire single-photon detector | |
| Wolf et al. | Identification of PV solar cells and modules parameters by combining statistical and analytical methods | |
| Constantine et al. | Discovering an active subspace in a single‐diode solar cell model | |
| Edson et al. | Lyapunov exponents of the Kuramoto–Sivashinsky PDE | |
| CN104035012B (en) | A kind of modulate circuit of partial-discharge ultrahigh-frequency signal detection | |
| Orzeł et al. | Accelerating subdiffusions governed by multiple-order time-fractional diffusion equations: Stochastic representation by a subordinated Brownian motion and computer simulations | |
| CN106706127A (en) | SiPM-based multi-photon detection method | |
| Fouda et al. | The three-state test for chaos detection in discrete maps | |
| CN106405616B (en) | A kind of pulse measuring method | |
| CN202548093U (en) | Micro-current chemical signal pickup device | |
| de Dreuzy et al. | Anomalous diffusion exponents in continuous two-dimensional multifractal media | |
| Nomi et al. | Complex network analysis of spatiotemporal dynamics of premixed flame in a Hele–Shaw cell: A transition from chaos to stochastic state | |
| Carrettoni et al. | Generation of noise time series with arbitrary power spectrum | |
| Zaharatos et al. | On the estimability of the PV single‐diode model parameters | |
| Behera et al. | Power spectral density analysis of pressure fluctuation in pneumatic conveying of powders | |
| Xu et al. | Hardware Trojans detection based on BP neural network | |
| Herbert et al. | FPGA implementation of a high‐speed, real‐time, windowed standard deviation filter | |
| CN109030489B (en) | Method and system for measuring Gerunisen parameters of gas | |
| Horowitz et al. | Ballistic deposition on deterministic fractals: Observation of discrete scale invariance | |
| CN113009545A (en) | Computing method for net counting of seawater radionuclides | |
| Faranda et al. | Robust estimate of dynamo thresholds in the von Kármán sodium experiment using the extreme value theory | |
| Dan et al. | Tower impulse grounding resistance measurement based on multiple frequency impedance | |
| Zhang et al. | Parameter estimation for the fractional Schrödinger equation using Bayesian method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |