CN106115605A - Mems device encapsulating structure and method - Google Patents
Mems device encapsulating structure and method Download PDFInfo
- Publication number
- CN106115605A CN106115605A CN201610554237.3A CN201610554237A CN106115605A CN 106115605 A CN106115605 A CN 106115605A CN 201610554237 A CN201610554237 A CN 201610554237A CN 106115605 A CN106115605 A CN 106115605A
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- mems
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 claims description 142
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 abstract 11
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The embodiment of the invention discloses a kind of mems device encapsulating structure and method.Described encapsulating structure includes: be formed with the first groove, the first plain conductor and the second plain conductor in the first plane of block；First end of the first plain conductor extends to the second plane of block by being positioned at the connecting hole of the first bottom portion of groove, and the second end of the first plain conductor and the second plain conductor are positioned at non-first grooved area of the first plane；Device architecture, the 3rd plain conductor and the 4th plain conductor electrically connected with device architecture it is formed with on MEMS wafer；Device architecture and the first groove are correspondingly arranged；Second end of the 4th plain conductor and the first plain conductor is bonded by the first bonded layer, to realize electrical connection；3rd plain conductor and the second plain conductor are bonded by the second bonded layer, with sealing cap and MEMS wafer.Embodiments provide a kind of ensureing bubble-tight while, reduce technology difficulty and the encapsulation scheme of cost.
Description
Technical Field
The embodiment of the invention relates to a semiconductor packaging technology, in particular to a micro electro mechanical system device packaging structure and a micro electro mechanical system device packaging method.
Background
Micro-Electro-Mechanical systems (MEMS) sensors are a new type of sensor that is manufactured using Micro-electronics and micromachining techniques. Compared with the traditional sensor, the sensor has the characteristics of small volume, light weight, low cost, low power consumption, high reliability, suitability for batch production, easiness in integration and realization of intellectualization.
In applications in the fields of consumer electronics, intelligent terminals, wearable products, and the like, the size and cost of the MEMS sensor are required to be further reduced while the integration level and performance are improved, so that a three-dimensional packaging integration technology mainly based on a Through Silicon Via (TSV) technology attracts great attention in the MEMS field.
Since most MEMS devices have a requirement for air tightness, in the prior art, the TSV of the MEMS sensor is usually disposed on one side of the MEMS functional substrate or one side of the cap, but usually needs to penetrate through a very thick substrate layer, which results in high process difficulty and cost.
Disclosure of Invention
The invention provides a micro electro mechanical system device packaging structure and a method, and provides a packaging scheme which can reduce the process difficulty and the cost while ensuring the air tightness.
In a first aspect, an embodiment of the present invention provides a mems device package structure, where the package structure includes: a cap and a MEMS wafer; wherein,
a first groove, a first metal wire and a second metal wire are formed on the first plane of the cap; the first end of the first metal wire extends to the second plane of the cap through a connecting hole at the bottom of the first groove, and the second end of the first metal wire and the second metal wire are located in a non-first groove area of the first plane;
a device structure, a third metal wire and a fourth metal wire electrically connected with the device structure are formed on the MEMS wafer; the device structure is arranged corresponding to the first groove; the fourth metal wire is bonded with the second end of the first metal wire through a first bonding layer so as to realize electric connection; and the third metal wire and the second metal wire are bonded through a second bonding layer so as to seal the cap and the MEMS wafer.
In a second aspect, an embodiment of the present invention further provides a packaging method for a mems device, where the packaging method includes:
forming a first groove, a first metal wire and a second metal wire on a first plane of a cap; the first end of the first metal wire is positioned at the bottom of the first groove, and the second end of the first metal wire and the second metal wire are positioned in a non-first groove area of the first plane;
forming a device structure, a third metal wire and a fourth metal wire electrically connected with the device structure on the MEMS wafer; the device structure is arranged corresponding to the first groove;
bonding the fourth metal wire and the second end of the first metal wire through a first bonding layer to realize electric connection; bonding the third metal wire and the second metal wire through a second bonding layer to seal the cap and the MEMS wafer;
forming a connection hole in a second plane of the cap; the first end of the first metal wire extends to the second plane of the cap through the connecting hole.
In the package structure of the MEMS device provided by the embodiment of the present invention, a first groove, a first metal wire and a second metal wire are formed on a first plane of a cap, a first end of the first metal wire extends to a second plane of the cap through a connection hole located at the bottom of the first groove, a device structure on the MEMS wafer is disposed corresponding to the first groove, a fourth metal wire is bonded to a second end of the first metal wire through a first bonding layer to achieve electrical connection, a third metal wire is bonded to the second metal wire through a second bonding layer to achieve sealing of the cap and the MEMS wafer, since the first metal wire extends from the non-first groove region of the first plane of the cap to the bottom surface through the side surface of the first groove, so that the connection hole can be arranged at the bottom of the first groove, and because the bottom of the first groove has thinner wall thickness, the process difficulty and the cost when the connecting hole is formed are reduced.
Drawings
FIG. 1a is a schematic diagram of a MEMS device package structure according to a first embodiment of the present invention;
FIG. 1b is a schematic view of a MEMS wafer according to one embodiment of the present invention;
FIG. 2 is a flowchart of a MEMS device packaging method according to a second embodiment of the present invention;
FIG. 3a is a schematic view of a first groove according to a second embodiment of the present invention;
FIG. 3b is a schematic view of a metal wire according to a second embodiment of the present invention;
FIG. 3c is a schematic view of a MEMS wafer according to a second embodiment of the present invention;
FIG. 3d is a schematic bonding diagram according to a second embodiment of the present invention;
fig. 3e is a schematic view of a connection hole in the second embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Example one
Fig. 1a is a schematic view of a package structure of a mems device according to a first embodiment of the present invention, and referring to fig. 1a, the package structure includes:
cap 10 and MEMS wafer 20; wherein,
a first groove 110, a first metal wire 120 and a second metal wire 130 are formed on the first plane 11 of the cap 10; the first end 121 of the first metal wire 120 extends to the second plane 12 of the cap 10 through the connection hole 140 located at the bottom of the first groove 110, and the second end 122 of the first metal wire 120 and the second metal wire 130 are located in the non-first groove 110 region of the first plane 11.
A device structure 210, a third metal wire 220 and a fourth metal wire 230 electrically connected to the device structure 210 are formed on the MEMS wafer 20; the device structure 210 is disposed corresponding to the first groove 110; the fourth metal wire 230 is bonded to the second end 122 of the first metal wire 120 through the first bonding layer 30 to achieve electrical connection; the third metal wire 220 and the second metal wire 130 are bonded by the second bonding layer 40 to seal the cap 10 and the MEMS wafer 20.
Specifically, the cap 10 may be made of a silicon material, or may be made of other organic or inorganic materials such as glass and ceramic. The first metal wire 120 and the second metal wire 130, and the third metal wire 220 and the fourth metal wire 230 may be formed in the same process, and specifically may be formed by Physical Vapor Deposition (PVD), electroplating, photolithography, etching, and the like. The first groove 110 includes a bottom surface 111 and a side surface 112, the first metal wire 120 extends from a region of the first plane 11 other than the first groove 110 to the bottom surface 111 through the side surface 112 of the first groove 110, so that the connection hole 140 can be disposed at the bottom of the first groove 110, and since the bottom of the first groove 110 has a thinner wall thickness, the connection hole 140 has a smaller aspect ratio, thereby reducing the process difficulty and cost when forming the connection hole 140.
Specifically, the second metal wire 130 is disposed around the edge of the first plane 11, the second metal wire 130 is disposed around the edge of the cap 10, and the edge of the cap 10 corresponds to the third metal wire 220, and the shapes of the second metal wire 130 and the third metal wire 220 may be set according to the shape of the cap 10 or the MEMS wafer 20. Fig. 1b is a schematic view of a MEMS wafer according to a first embodiment of the invention, and referring to fig. 1b, for example, a plurality of third metal wires 230 are formed on the MEMS wafer 20, and correspond to a plurality of caps, the third metal wires 220 may be square, and the corresponding second metal wires 130 on the caps are square. It should be noted that fig. 1b only schematically illustrates the shapes of the MEMS wafer 20 and the third metal wire 220, and does not limit the present invention.
Optionally, the connection hole 140 is at least partially filled with metal. Specifically, if the inside of the connection hole 130 is completely filled with metal, a problem of stress concentration may be caused, which is not suitable for a sensor sensitive to stress. Specifically, if the device structure 210 is not sensitive to stress, the connection hole 140 may be filled with metal or partially filled with metal; if device structure 210 is stress sensitive, it may be desirable to partially fill the connection hole 140 with metal.
Alternatively, if the cap 10 is made of silicon material, the first groove 110 may be formed by wet etching or dry isotropic etching.
Specifically, referring to fig. 1a, the first groove 110 includes a bottom surface 111 and a side surface 112, and an included angle β between the bottom surface 111 and the side surface 112 is 120-150 degrees. Since the first metal wire 120 extends from the first plane 11 of the cap 10 to the bottom surface 111 through the side surface 112 of the first groove 110, the process difficulty of the first metal wire 120 can be reduced by adopting the above-mentioned angle range, and at the same time, the first groove 110 can have enough space to accommodate the device structure 210 on the MEMS wafer 20. The included angle β between the bottom surface 111 and the side surface 112 of the first groove 110 may be selected to be 125.3 degrees. In addition, the intersection of the bottom surface 111 and the side surface 112 of the first groove 110 may be arc-shaped.
In addition, the first bonding layer 30 and the second bonding layer 40 may implement bonding between the first metal wire 120 and the fourth metal wire 230 and between the second metal wire 130 and the third metal wire 220 through metal eutectic bonding, and specifically, lower bonding temperature may be adopted by adopting metal eutectic bonding, so as to reduce the process difficulty. The first and second bonding layers 30 and 40 may also achieve bonding between the first and fourth metal wires 120 and 230 and the second and third metal wires 130 and 220 by diffusion bonding.
In addition, referring to fig. 1a, a pad 150 is formed on the second plane 12 of the cap 10 to be electrically connected to the first metal line 120 through the connection hole 140. By providing the bonding pads 150, the package structure is easily connected to external electronic devices.
In this embodiment, the third metal wire is bonded to the second metal wire through the second bonding layer to seal the cap and the MEMS wafer, and the first metal wire extends from the non-first groove region of the first plane to the bottom surface of the first groove through the side surface of the first groove, so that the connection hole may be disposed at the bottom of the first groove, and the connection hole has a small aspect ratio due to the thin wall thickness at the bottom of the first groove, thereby reducing the process difficulty and cost for forming the connection hole.
Example two
Fig. 2 is a flowchart of a mems device packaging method according to a second embodiment of the present invention, and referring to fig. 2, the method includes:
step 201, forming a first groove, a first metal wire and a second metal wire on a first plane of a cap.
Fig. 3a is a schematic diagram of a first groove in the second embodiment of the invention, and optionally, if the cap 10 is made of a silicon material, the forming of the first groove 110 on the first plane of the cap 10 includes: the first groove 110 is formed by wet etching or dry isotropic etching.
Fig. 3b is a schematic diagram of a first metal wire according to a second embodiment of the invention, and referring to fig. 3b, a first end 121 of the first metal wire 120 is located at the bottom of the first groove 110, and a second end 122 of the first metal wire 120 and a second metal wire 130 are located in a non-first groove 110 region of the first plane 11. In addition, the first metal wire 120 and the second metal wire 130 can be formed in the same process step, saving process steps.
Step 202, forming a device structure, a third metal wire and a fourth metal wire electrically connected with the device structure on the MEMS wafer.
Fig. 3c is a schematic view of a MEMS wafer according to a second embodiment of the invention, and referring to fig. 3c, the device structure 210 is disposed corresponding to the first groove 110, and the third metal wire 220 and the fourth metal wire 230 can be formed in the same process step, thereby saving process steps.
Step 203, bonding the fourth metal wire and the second end of the first metal wire through a first bonding layer to realize electrical connection, and bonding the third metal wire and the second metal wire through a second bonding layer to seal the cap and the MEMS wafer.
Fig. 3d is a schematic bonding diagram in the second embodiment of the present invention, and referring to fig. 3d, in the bonding process, the first bonding layer 30 and the second bonding layer 40 are first fabricated, then the first metal wire 120 and the fourth metal wire 230 are bonded through the first bonding layer 30, so that the first metal wire 120 and the device structure 210 can be electrically connected, and the second metal wire 130 and the third metal wire 220 are bonded through the second bonding layer 40, so that a sealed cavity can be formed between the cap 10 and the MEMS wafer 20, and the airtightness of the package structure is maintained.
And step 204, forming a connecting hole on the second plane of the cover cap.
Fig. 3e is a schematic diagram of a connection hole in the second embodiment of the present invention, and referring to fig. 3e, a connection hole 140 is formed on the second plane 12 at a position corresponding to the first end 121 of the first metal wire 120, and the first end 121 of the first metal wire 120 extends to the second plane 12 of the cap 10 through the connection hole 140 to achieve connection with an external device. Specifically, when the connection hole 140 is formed, a through hole is first formed, the through hole extends to the bottom surface of the first groove 110, does not penetrate through the first metal wire 120, and ensures that the environment in the sealed cavity is still vacuum or positive pressure, thereby ensuring the air tightness of the package, and then the connection hole 140 is formed by filling metal. Optionally, at least a part of the connection hole 140 may be filled with metal to reduce the resistance of the filling medium in the connection hole 140, and the problem of stress concentration caused by the whole filled metal may be avoided.
In addition, after the connection hole 140 is formed, a pad 150 may be further formed on the second plane 12 of the cap 10 to be electrically connected to the first metal line 120 through the connection hole 140.
In this embodiment, the third metal wire is bonded to the second metal wire through the second bonding layer, so as to seal the cap and the MEMS wafer, and the first metal wire extends from the non-first groove region of the first plane to the bottom surface through the side surface of the first groove, so that the connection hole may be disposed at the bottom of the first groove, and the bottom of the first groove has a relatively thin wall thickness, thereby reducing the process difficulty and cost for forming the connection hole.
The packaging method of the MEMS device provided by the embodiment belongs to the same inventive concept as the packaging structure of the MEMS device provided by any embodiment of the invention, and has corresponding beneficial effects. For details not elaborated in this embodiment, reference may be made to the mems device package structure provided by any embodiment of the invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A mems device package structure, comprising:
a cap and a micro-electromechanical system (MEMS) wafer; wherein,
a first groove, a first metal wire and a second metal wire are formed on the first plane of the cap; the first end of the first metal wire extends to the second plane of the cap through a connecting hole at the bottom of the first groove, and the second end of the first metal wire and the second metal wire are located in a non-first groove area of the first plane;
a device structure, a third metal wire and a fourth metal wire electrically connected with the device structure are formed on the MEMS wafer; the device structure is arranged corresponding to the first groove; the fourth metal wire is bonded with the second end of the first metal wire through a first bonding layer so as to realize electric connection; and the third metal wire and the second metal wire are bonded through a second bonding layer so as to seal the cap and the MEMS wafer.
2. The structure of claim 1, wherein the connecting holes are at least partially filled with metal.
3. The structure of claim 1, wherein the cap is made of silicon material, and the first groove is formed by wet etching or dry isotropic etching.
4. The structure of claim 1, wherein the first groove comprises a bottom surface and a side surface, and the bottom surface and the side surface form an angle of 120-150 degrees.
5. The structure of claim 1, wherein the first bonding layer and the second bonding layer enable bonding between the first metal wire and the fourth metal wire and the second metal wire and the third metal wire by metal eutectic bonding.
6. The structure of claim 1, wherein the first bonding layer and the second bonding layer effect bonding between the first metal wire and the fourth metal wire and the second metal wire and the third metal wire by diffusion bonding.
7. The structure of claim 1, wherein a pad is formed on the second plane of the cap, and is electrically connected to the first metal wire through the connection hole.
8. A method of packaging a mems device, comprising:
forming a first groove, a first metal wire and a second metal wire on a first plane of a cap; the first end of the first metal wire is positioned at the bottom of the first groove, and the second end of the first metal wire and the second metal wire are positioned in a non-first groove area of the first plane;
forming a device structure, a third metal wire and a fourth metal wire electrically connected with the device structure on a micro-electro-mechanical system (MEMS) wafer; the device structure is arranged corresponding to the first groove;
bonding the fourth metal wire and the second end of the first metal wire through a first bonding layer to realize electric connection; bonding the third metal wire and the second metal wire through a second bonding layer to seal the cap and the MEMS wafer;
forming a connection hole in a second plane of the cap; the first end of the first metal wire extends to the second plane of the cap through the connecting hole.
9. The method of claim 8, wherein forming a connection aperture in the second plane of the cap comprises:
and at least partially filling metal in the connecting hole.
10. The method of claim 8, wherein the cap is made of silicon material, and wherein forming the first recess in the first plane of the cap comprises:
and forming the first groove by wet etching or dry isotropic etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610554237.3A CN106115605A (en) | 2016-07-14 | 2016-07-14 | Mems device encapsulating structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610554237.3A CN106115605A (en) | 2016-07-14 | 2016-07-14 | Mems device encapsulating structure and method |
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| CN106115605A true CN106115605A (en) | 2016-11-16 |
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| CN201610554237.3A Pending CN106115605A (en) | 2016-07-14 | 2016-07-14 | Mems device encapsulating structure and method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099917A1 (en) * | 2002-11-27 | 2004-05-27 | Steve Greathouse | Wafer-level packaging of electronic devices before singulation |
| CN1872658A (en) * | 2006-05-10 | 2006-12-06 | 东南大学 | Switch capsulation structure of microelectronic mechanical system in radio frequency with thin top cover and manufacturing method |
| CN101243010A (en) * | 2005-08-11 | 2008-08-13 | 许密特有限公司 | Chip scale package for a micro component |
| CN101434374A (en) * | 2008-12-23 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | Structure and implementing method of MEMS device disc grade chip size hermetic package |
| CN205187843U (en) * | 2015-11-13 | 2016-04-27 | 华天科技（昆山）电子有限公司 | MEMS chip package structure |
-
2016
- 2016-07-14 CN CN201610554237.3A patent/CN106115605A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099917A1 (en) * | 2002-11-27 | 2004-05-27 | Steve Greathouse | Wafer-level packaging of electronic devices before singulation |
| CN101243010A (en) * | 2005-08-11 | 2008-08-13 | 许密特有限公司 | Chip scale package for a micro component |
| CN1872658A (en) * | 2006-05-10 | 2006-12-06 | 东南大学 | Switch capsulation structure of microelectronic mechanical system in radio frequency with thin top cover and manufacturing method |
| CN101434374A (en) * | 2008-12-23 | 2009-05-20 | 中国科学院上海微系统与信息技术研究所 | Structure and implementing method of MEMS device disc grade chip size hermetic package |
| CN205187843U (en) * | 2015-11-13 | 2016-04-27 | 华天科技（昆山）电子有限公司 | MEMS chip package structure |
Non-Patent Citations (2)
| Title |
|---|
| （美）罗伯特·奥西安德: "《微机电系统和微结构以及在航天中的应用》", 31 December 2013, 清华大学出版社 * |
| 何丹农: "《纳米制造》", 31 December 2011, 华东理工大学出版社 * |
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Application publication date: 20161116 |
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| RJ01 | Rejection of invention patent application after publication |