CN102798489B - Pressure sensor and preparation method thereof - Google Patents
Pressure sensor and preparation method thereof Download PDFInfo
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- CN102798489B CN102798489B CN201110322967.8A CN201110322967A CN102798489B CN 102798489 B CN102798489 B CN 102798489B CN 201110322967 A CN201110322967 A CN 201110322967A CN 102798489 B CN102798489 B CN 102798489B
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Abstract
The invention provides a pressure sensor which can reduce the size and facilitate packaging and a preparation method of the pressure sensor, aiming at the defects of a pressure sensor structure in size and packaging technology in the prior art. The pressure sensor comprises a substrate (100), a pressure sensitive element (200) and an extraction electrode thereof, and a silicon through hole (50), wherein the pressure sensitive element (200) and the extraction electrode thereof are positioned on one side of the substrate (100), the silicon through hole (50) penetrates through the substrate (100), one end of the silicon through hole (50) is interconnected with the extraction electrode of the pressure sensitive element (200), the other end of the silicon through hole (50) is used as an output terminal of the pressure sensor, the pressure sensor also comprises a sealing cavity (40) positioned below the pressure sensitive element (200), and a pressure sensitive film is formed between the pressure sensitive element (200) and the sealing cavity (40).
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of pressure transducer and preparation method thereof.
Background technology
Since the piezoresistive effect that it is found that semiconductor silicon, pressure drag type pressure capsule obtains and develops rapidly and promote.Piezoresistive effect refers to when material is under pressure effect, the physical phenomenon of its resistance or resistivity generation significant change.
As shown in Figure 1, wherein label 101 refers to Si to the sectional view of now widely used a kind of pressure transducer
3n
4, label 102 refers to SiO
2, label 103 refers to Al, and label 104 refers to Si substrate.The core of this pressure transducer is the membrane structure comprising pressure drag bridge diagram be positioned at above sealed cavity.Pressure sensitive structural and the circuit of this pressure transducer are all made in above device, and can not be inverted with the membrane structure of perception ambient pressure function, make the pressure transducer of this structure outwards can only draw electric signal by the mode of wire bonding.And for the encapsulation of modern electronic product, due to Wire Bonding Technology have that interconnect delay is long, inductance is large, packaging efficiency is low, with the shortcoming such as wafer level packaging is incompatible and be unfavorable for the preparation of the pressure transducer of this structure.
Another kind of pressure sensor structure is the electric signal of being drawn pressure transducer by the mode of back bonding, although it avoids the negative impact of wire bonding on pressure transducer devices size and encapsulation, but it still needs integrated pressure signal processing circuit in system version, and its preparation technology is longer, need to introduce silicon-silicon bond conjunction etc.
Summary of the invention
The present invention is directed to the above-mentioned defect of pressure sensor structure of the prior art, a kind of pressure sensor structure that can overcome above-mentioned defect is provided.
The invention provides a kind of pressure transducer, this pressure transducer comprises substrate, pressure-active element and extraction electrode thereof and silicon through hole, wherein, described pressure-active element and extraction electrode thereof are positioned at the side of described substrate, described silicon through hole runs through described substrate and one end of described silicon through hole and the extraction electrode of described pressure-active element interconnect, the other end of described silicon through hole is as the output terminal of described pressure transducer, described pressure transducer also comprises the sealed cavity (40) being positioned at described pressure-active element (200) below, and form pressure-sensitive film between described pressure-active element (200) and described sealed cavity (40).
The present invention also provides a kind of method preparing pressure transducer, and the method comprises:
Substrate is provided;
The side of substrate is prepared pressure-active element and extraction electrode thereof, and carries out graphical;
The electrical connection hole of described pressure-active element extraction electrode is prepared in the side being formed with described pressure-active element of described substrate;
The side not being formed with described pressure-active element of described substrate is thinned to and exposes described electrical connection hole thus form silicon through hole;
On the side not forming described pressure-active element of described substrate, described silicon through hole prepares metal salient point;
Sealed cavity and the pressure-sensitive film between described pressure-active element and described sealed cavity is formed below described pressure-active element.
Because pressure transducer according to the present invention is the pressure signal of being drawn pressure transducer by silicon through hole, so compare with back bonding technology with wire bonding of the prior art, the size of pressure transducer can be reduced and mutually compatible with wafer level packaging.
Accompanying drawing explanation
Fig. 1 a kind of pressure sensor structure figure of the prior art;
Fig. 2 is the sectional view according to pressure transducer of the present invention;
Fig. 3 is another sectional view according to pressure transducer of the present invention;
Fig. 4 is the preparation flow figure according to pressure transducer of the present invention;
Fig. 5-Figure 14 is the idiographic flow sectional view according to pressure transducer of the present invention.
Embodiment
Describe in detail according to pressure transducer of the present invention and preparation method thereof below in conjunction with accompanying drawing.
As shown in Figure 2, pressure transducer according to the present invention comprises substrate 100, pressure-active element 200 and extraction electrode thereof and silicon through hole 50, wherein, described pressure-active element 200 and extraction electrode thereof are positioned at the side of described substrate 100, described silicon through hole 50 runs through described substrate 100 and one end of described silicon through hole 50 and the extraction electrode of described pressure-active element 200 interconnect, the other end of described silicon through hole 50 is as the output terminal of described pressure transducer, described pressure transducer also comprises the sealed cavity 40 be positioned at below described pressure-active element 200, and form pressure-sensitive film between described pressure-active element 200 and described sealed cavity 40.
Substrate 100 shown in Fig. 2 is silicon-on-insulator (SOI) substrate, it the first silicon layer 10a and the second silicon layer 10b of comprising insulation course 10 and being positioned at insulation course 10 both sides.Should be understood that, the substrate 100 used is not limited to the SOI substrate shown in Fig. 2, can also use the substrate of other types.
In addition, the pressure-active element 200 shown in Fig. 2 comprises voltage dependent resistor (VDR), extraction electrode, passivation layer etc.Hereafter after a while the structure of preparation method to pressure-active element 200 in conjunction with pressure transducer is described.It will be appreciated by those skilled in the art that the present invention is not limited to pressure-active element 200 structure shown in Fig. 2, other pressure-active element structure is also available.In addition, the label 70 in Fig. 2 is metal salient points of the output terminal as pressure transducer.
Certainly, can also the integrated treatment element 1 that pressure signal is processed in pressure transducer, to be more conducive to the miniaturization of electronic system and the diversity of function.Be integrated with the sectional view of the pressure transducer for the treatment of element 1 as shown in Figure 3.As shown in Figure 3, treatment element 1 also draws electric signal by through-silicon via structure.The miniaturization of electronic system can be beneficial to like this.In figure 3, organic filler (such as, polymer latex) 60 can be used to fill around formed resulting pressure sensor chip, to ensure the impermeability of sealed cavity 40.Intermetallic compound bonding structure (such as, Au-Sn bonding structure) can certainly be passed through and form sealed cavity 40.But, one of skill in the art will appreciate that above-described sealing means is only example but not for limiting the scope of the invention, in fact, other sealing means are also feasible, as long as can guarantee the impermeability of sealed cavity 40.
Below in conjunction with Fig. 4, the preparation flow according to pressure transducer of the present invention is described.As shown in Figure 4, comprise according to the preparation flow of pressure transducer of the present invention:
S41, provide substrate 100.Wherein, this substrate 100 can be the substrate of any type, comprises SOI substrate, silicon substrate etc.
S42, on the side of substrate 100, prepare pressure-active element 200 and extraction electrode thereof, and carry out graphical;
S43, prepare the electrical connection hole 50 of described pressure-active element 200 extraction electrode in the side being formed with described pressure-active element 200 of described substrate 100;
S44, the side not being formed with described pressure-active element 200 of described substrate 100 is thinned to and exposes described electrical connection hole thus form silicon through hole 50;
S45, on the side not forming described pressure-active element 200 of described substrate 100, described silicon through hole 50 prepares metal salient point 70;
S46, below described pressure-active element 200, form sealed cavity and the pressure-sensitive film between described pressure-active element 200 and described sealed cavity.
Be silicon-on-insulator (SOI) substrate below with substrate be example, composition graphs 5-Figure 13 illustrates the preparation flow according to pressure transducer of the present invention.
As shown in Figure 5, pressure-active element 200 is prepared first on an soi substrate 100, such as voltage dependent resistor (VDR).Wherein, the label 10 in Fig. 5 refers to the insulation course of SOI substrate 100, and label 10a and 10b refers to the first silicon layer and second silicon layer of SOI substrate 100 respectively.
Afterwards, as shown in Figure 6, metallized traces is carried out to formed pressure-active element 200, thus form metal wiring layer 3.
Afterwards, as shown in Figure 7, metal wiring layer 3 forms passivation layer 4, and needing the position of preparing silicon through hole 50 in later step to reserve opening 9.This passivation layer 4 can be formed by chemical vapor deposition process, and the material of this passivation layer 4 can be monox or silicon nitride.
Afterwards, as shown in Figure 8, the metal wiring layer 3 of non-deposit passivation layer 4 forms coat of metal 5.This coat of metal 5 can pass through chemical vapour deposition or physical vapor deposition or other technique and be formed.Similarly, the position of preparing silicon through hole 50 in later step is needed to reserve opening 9.And the material of this coat of metal 5 can be Ti or TiW.
Afterwards, as shown in Figure 9, estimating the formation hole, position of preparing silicon through hole 50, and forming insulation course and diffusion impervious layer bottom this hole He on sidewall.Deep reaction ion etching (DRIE) technique or other etching technics can be adopted to form this hole 50.This hole 50 is holes that depth-to-width ratio is high.According to the requirement of pressure sensor unit size, the diameter in this hole 50 can be positioned at the scope of 5 microns to 50 microns, and the degree of depth in this hole 50 can be positioned at the scope of 80 microns to 200 microns.
Afterwards, as shown in Figure 10, bonding is carried out (such as in the side not forming pressure-active element 200 of this SOI substrate 100 and interim bonding wafers 30, bonding is carried out) by bonding glue 30a, and thinning back side is carried out to this SOI substrate 100, until the hole formed before exposing thus form silicon through hole 50.
Afterwards, as shown in figure 11, in silicon through hole 50, Seed Layer is formed, and filled conductive material, such as copper, tungsten, polysilicon, conducting polymer, Metal polymer composite etc. in this silicon through hole 50 afterwards.Certainly, also can in Fig. 10 before the substrate 100 with pressure-active element 200 be carried out bonding with interim bonding wafers 30, first on interim bonding wafers 30, form Seed Layer, and afterwards in fig. 11, by from interim bonding wafers 30 to the direction of the substrate 100 with pressure-active element 200, carry out filled conductive material by electroplating technology.Afterwards, as shown in figure 11, silicon through hole 50 makes metal salient point 70.
Afterwards, as shown in figure 12, remove the partial SOI substrate 100 below pressure-active element 200, until expose insulation course 10, thus define the pressure-sensitive film be positioned at below pressure-active element 200.Wherein, described partial SOI substrate can be removed by adopting the method for ICP dry etching.Like this, by adopting SOI substrate, the homogeneity of pressure-sensitive film can strictly be controlled.
Afterwards, as shown in figure 13, remove interim bonding wafers 30, and the space formed in Figure 12 is sealed thus forms sealed cavity 40.Wherein, can form sealed cavity 40 by filling filler in space formed in fig. 12, wherein, filler can be polymer latex or other materials.Certainly, except being formed except this mode of sealed cavity 40 by filling filler 60, sealed cavity 40 can also be formed by designing metallic packing ring (not shown) around formed each pressure sensor chip, or form sealed cavity 40 by bonding is carried out in the side not forming pressure-active element 200 of silicon-on-insulator substrate 100 and another chip.But this is also invented and is not limited to sealing means described herein, and other sealing means are also feasible, as long as can guarantee the impermeability of sealed cavity 40.
Certainly; in order to integrated pressure signal processing circuit in pressure sensor; can also be as shown in figure 14; bonding is carried out with the substrate 100 with pressure-active element 200 by with the treatment circuit 1 processed pressure signal; interim bonding wafers 30 wherein in foregoing schemes just should be removed after treatment circuit 1 with substrate 100 bonding, is not damaged to protect the pressure-active element 200 formed in foregoing schemes.Wherein, in order to ensure the impermeability of sealed cavity, can organic gel material be used (such as, polymer latex) carry out filling to form hermetically-sealed construction 40 at formed sensor perimeter, intermetallic compound bonding structure (such as, Au-Sn bonding structure) can certainly be passed through and form sealed cavity 40.But, one of skill in the art will appreciate that above-described sealing means is only example but not for limiting the scope of the invention, in fact, other sealing means are also feasible, as long as can guarantee the impermeability of sealed cavity 40.And treatment circuit 1 also can carry out the signal after output processing by through-silicon via structure.And the step of Figure 14 is optional.
More than in conjunction with preferred implementation to invention has been detailed description, be to be understood that, when not deviating from spirit and scope of the invention, various amendment and distortion can be carried out to the present invention, and being not limited to order recited above according to the preparation flow of pressure transducer of the present invention, some step can mutually exchange or omit.
Claims (5)
1. a pressure transducer, this pressure transducer comprises substrate (100), pressure-active element (200) and extraction electrode thereof and silicon through hole (50), wherein, described pressure-active element (200) and extraction electrode thereof are positioned at the side of described substrate (100), described silicon through hole (50) runs through described substrate (100) and the extraction electrode of one end of described silicon through hole (50) and described pressure-active element (200) interconnects, the other end of described silicon through hole (50) is as the output terminal of described pressure transducer, described pressure transducer also comprises the sealed cavity (40) being positioned at described pressure-active element (200) below, and form pressure-sensitive film between described pressure-active element (200) and described sealed cavity (40), described pressure transducer also comprises the treatment element (1) processed the signal exported by described silicon through hole (50) being positioned at described substrate (100) opposite side, this treatment element (1) has the electrode be electrically connected with described silicon through hole (5), wherein, etching is positioned at a part for the described substrate (100) of described pressure-active element (200) below and bonding is carried out to form described sealed cavity (40) in the side not forming described pressure-active element (200) of described substrate (100) and described treatment element (1).
2. pressure transducer according to claim 1, wherein, described substrate (100) is silicon-on-insulator substrate.
3. prepare a method for pressure transducer, the method comprises:
Substrate is provided;
The side of substrate is prepared pressure-active element and extraction electrode thereof, and carries out graphical;
The electrical connection hole of described pressure-active element extraction electrode is prepared in the side being formed with described pressure-active element of described substrate;
The side not being formed with described pressure-active element of described substrate is thinned to and exposes described electrical connection hole thus form silicon through hole;
On the side not forming described pressure-active element of described substrate, described silicon through hole prepares metal salient point;
Sealed cavity and the pressure-sensitive film between described pressure-active element and described sealed cavity is formed below described pressure-active element; And
Wherein, describedly below described pressure-active element, sealed cavity is formed and the pressure-sensitive film between described pressure-active element and described sealed cavity comprises:
Etching is positioned at a part for the described substrate below described pressure-active element;
By the side not forming described pressure-active element of described substrate with bonding is carried out to the treatment element that pressure signal processes;
Form the sealed cavity of described pressure transducer.
4. method according to claim 3, wherein, described method also comprises:
Described substrate is carried out thinning before, the side being formed with described pressure-active element of described substrate forms diaphragm; And
Described diaphragm is removed after the described sealed cavity of formation.
5. method according to claim 3, wherein, described substrate is silicon-on-insulator substrate.
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| CN201110322967.8A CN102798489B (en) | 2011-10-21 | 2011-10-21 | Pressure sensor and preparation method thereof |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103115703B (en) * | 2013-01-21 | 2015-07-08 | 西北工业大学 | Manufacturing method of micro capacitance-type wall shear stress sensor based on through silicon via (TSV) technology |
| US8564076B1 (en) | 2013-01-30 | 2013-10-22 | Invensense, Inc. | Internal electrical contact for enclosed MEMS devices |
| US9013014B2 (en) * | 2013-04-29 | 2015-04-21 | Infineon Technologies Ag | Chip package and a method of manufacturing the same |
| US9422156B2 (en) * | 2014-07-07 | 2016-08-23 | Invensense, Inc. | Integrated CMOS and MEMS sensor fabrication method and structure |
| CN104697700B (en) * | 2015-02-06 | 2017-07-14 | 北京大学 | A kind of piezoresistive pressure gage chip structure and preparation method thereof |
| CN111682108A (en) * | 2020-02-29 | 2020-09-18 | 浙江集迈科微电子有限公司 | Three-dimensional inductor manufacturing method |
| CN115885585A (en) * | 2021-06-21 | 2023-03-31 | 鹏鼎控股(深圳)股份有限公司 | Pressure-sensitive circuit board and manufacturing method thereof |
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| US6122974A (en) * | 1997-08-25 | 2000-09-26 | Hitachi, Ltd. | Semiconductor type pressure sensor |
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| CN101883309A (en) * | 2009-05-08 | 2010-11-10 | 佳能株式会社 | Capacitive electro-mechanical transducer and fabrication method of the same |
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| JP4858547B2 (en) * | 2009-01-09 | 2012-01-18 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
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| US6122974A (en) * | 1997-08-25 | 2000-09-26 | Hitachi, Ltd. | Semiconductor type pressure sensor |
| CN1366694A (en) * | 2000-04-21 | 2002-08-28 | 欧姆龙株式会社 | Static relay and communication device using static relay |
| CN101266176A (en) * | 2008-04-18 | 2008-09-17 | 中国科学院上海微系统与信息技术研究所 | Si-Si bonding isolator upper silicon high-temperature pressure sensor chip and manufacture method |
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Effective date of registration: 20201026 Address after: Room 1303, No. 99, Songyu south 2nd Road, Xiamen City, Fujian Province Patentee after: Xiamen Qingxin Integrated Technology Co., Ltd Address before: 100084 Beijing City, Haidian District Tsinghua Yuan Patentee before: TSINGHUA University |