CN102798489A - Pressure sensor and preparation method thereof - Google Patents
Pressure sensor and preparation method thereof Download PDFInfo
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- CN102798489A CN102798489A CN2011103229678A CN201110322967A CN102798489A CN 102798489 A CN102798489 A CN 102798489A CN 2011103229678 A CN2011103229678 A CN 2011103229678A CN 201110322967 A CN201110322967 A CN 201110322967A CN 102798489 A CN102798489 A CN 102798489A
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Abstract
The invention provides a pressure sensor which can reduce the size and facilitate packaging and a preparation method of the pressure sensor, aiming at the defects of a pressure sensor structure in size and packaging technology in the prior art. The pressure sensor comprises a substrate (100), a pressure sensitive element (200) and an extraction electrode thereof, and a silicon through hole (50), wherein the pressure sensitive element (200) and the extraction electrode thereof are positioned on one side of the substrate (100), the silicon through hole (50) penetrates through the substrate (100), one end of the silicon through hole (50) is interconnected with the extraction electrode of the pressure sensitive element (200), the other end of the silicon through hole (50) is used as an output terminal of the pressure sensor, the pressure sensor also comprises a sealing cavity (40) positioned below the pressure sensitive element (200), and a pressure sensitive film is formed between the pressure sensitive element (200) and the sealing cavity (40).
Description
Technical field
The present invention relates to semiconductor applications, relate in particular to a kind of pressure transducer and preparation method thereof.
Background technology
Since the piezoresistive effect that it is found that semiconductor silicon, pressure drag type pressure capsule has obtained developing rapidly and promoting.Piezoresistive effect refers to be under pressure at material does the time spent, the physical phenomenon of its resistance or resistivity generation significant change.
The sectional view of widely used a kind of pressure transducer is as shown in Figure 1 at present, and wherein label 101 refers to Si
3N
4, label 102 refers to SiO
2, label 103 refers to Al, and label 104 refers to the Si substrate.The core of this pressure transducer is the membrane structure that comprises the pressure drag bridge diagram that is positioned at the sealed cavity top.The pressure sensitive structural of this pressure transducer and circuit all are made in device top, and the membrane structure that has a perception ambient pressure function can not be inverted, and make the pressure transducer of this structure outwards to draw electric signal through the mode of lead-in wire bonding.And for the encapsulation of modern electronic product, owing to Wire Bonding Technology has that interconnect delay is long, inductance is big, packaging efficiency is low, is unfavorable for the preparation of the pressure transducer of this structure with shortcomings such as wafer level packaging are incompatible.
Another kind of pressure sensor structure is the electric signal of drawing pressure transducer through the mode of back bonding; Though it has avoided the negative influence of lead-in wire bonding to pressure transducer devices size and encapsulation; But its still need be on system's version the integrated pressure signal processing circuit; And its preparation technology is longer, needs to introduce that silicon-silicon bond closes etc.
Summary of the invention
The present invention is directed to the above-mentioned defective of pressure sensor structure of the prior art, a kind of pressure sensor structure that can overcome above-mentioned defective is provided.
The present invention provides a kind of pressure transducer; This pressure transducer comprises substrate, pressure-active element and extraction electrode thereof and silicon through hole; Wherein, Said pressure-active element and extraction electrode thereof are positioned at a side of said substrate, and said silicon through hole runs through the extraction electrode interconnection of an end and the said pressure-active element of said substrate and said silicon through hole, and the other end of said silicon through hole is as the output terminal of said pressure transducer; Said pressure transducer also comprises the sealed cavity (40) that is positioned at said pressure-active element (200) below, and forms pressure-sensitive film between said pressure-active element (200) and the said sealed cavity (40).
The present invention also provides a kind of method for preparing pressure transducer, and this method comprises:
Substrate is provided;
Preparation pressure-active element and extraction electrode thereof on a side of substrate, and carry out graphical;
The electrical connection hole for preparing said pressure-active element extraction electrode in a side that is formed with said pressure-active element of said substrate;
Thereby the side that is not formed with said pressure-active element of said substrate is thinned to exposes said electrical connection hole and form the silicon through hole;
On a side that does not form said pressure-active element of said substrate, on said silicon through hole, prepare metal salient point;
Forming sealed cavity and the pressure-sensitive film between said pressure-active element and said sealed cavity below the said pressure-active element.
Because pressure transducer according to the present invention is the pressure signal of drawing pressure transducer through the silicon through hole, thus with lead-in wire bonding of the prior art and back bonding compared with techniques, can reduce pressure transducer size and with wafer level packaging compatibility mutually.
Description of drawings
Fig. 1 a kind of pressure sensor structure figure of the prior art;
Fig. 2 is the sectional view according to pressure transducer of the present invention;
Fig. 3 is another sectional view according to pressure transducer of the present invention;
Fig. 4 is the preparation flow figure according to pressure transducer of the present invention;
Fig. 5-Figure 14 is the idiographic flow sectional view according to pressure transducer of the present invention.
Embodiment
Describe in detail according to pressure transducer of the present invention and preparation method thereof below in conjunction with accompanying drawing.
As shown in Figure 2; Pressure transducer according to the present invention comprises substrate 100, pressure-active element 200 and extraction electrode thereof and silicon through hole 50; Wherein, Said pressure-active element 200 and extraction electrode thereof are positioned at a side of said substrate 100, and said silicon through hole 50 runs through the extraction electrode interconnection of an end and the said pressure-active element 200 of said substrate 100 and said silicon through hole 50, and the other end of said silicon through hole 50 is as the output terminal of said pressure transducer; Said pressure transducer also comprises the sealed cavity 40 that is positioned at said pressure-active element 200 belows, and forms pressure-sensitive film between said pressure-active element 200 and the said sealed cavity 40.
In addition, pressure-active element 200 shown in Figure 2 comprises voltage dependent resistor (VDR), extraction electrode, passivation layer etc.Hereinafter will combine the preparation method of pressure transducer to come the structure of pressure-active element 200 is described after a while.It will be appreciated by those skilled in the art that the present invention is not limited to pressure-active element shown in Figure 2 200 structures, other pressure-active element structure also is available.In addition, the label among Fig. 2 70 is the metal salient points as the output terminal of pressure transducer.
Certainly, can also the integrated treatment element 1 that pressure signal is handled in the pressure transducer, so that more help the miniaturization and the function diversity of electronic system.The sectional view of pressure transducer that is integrated with treatment element 1 is as shown in Figure 3.As shown in Figure 3, treatment element 1 is also drawn electric signal through through-silicon via structure.Can be beneficial to the miniaturization of electronic system like this.In Fig. 3, can use organic filler (for example, polymer latex) 60 around formed resulting pressure sensor chip, to fill, to guarantee the impermeability of sealed cavity 40.Can certainly pass through intermetallic compound bonding structure (for example, Au-Sn bonding structure) and form sealed cavity 40.But, one of skill in the art will appreciate that above-described sealing means only is example but not is used to limit protection scope of the present invention, in fact, other sealing means also are feasible, as long as can guarantee the impermeability of sealed cavity 40.
Below in conjunction with Fig. 4 the preparation flow according to pressure transducer of the present invention is described.As shown in Figure 4, comprise according to the preparation flow of pressure transducer of the present invention:
S41, substrate 100 is provided.Wherein, this substrate 100 can be the substrate of any kind, comprises SOI substrate, silicon substrate etc.
S42, on a side of substrate 100 preparation pressure-active element 200 and extraction electrode thereof, and carry out graphical;
S43, the electrical connection hole 50 for preparing said pressure-active element 200 extraction electrodes in a side of the said pressure-active element 200 of being formed with of said substrate 100;
Thereby S44, a side of the said pressure-active element 200 of not being formed with of said substrate 100 is thinned to exposes said electrical connection hole and form silicon through hole 50;
S45, on a side of the said pressure-active element 200 of not forming of said substrate 100, on said silicon through hole 50 preparation metal salient point 70;
S46, forming sealed cavity and the pressure-sensitive film between said pressure-active element 200 and said sealed cavity below the said pressure-active element 200.
Be that silicon-on-insulator (SOI) substrate is an example below with the substrate, specify preparation flow according to pressure transducer of the present invention in conjunction with Fig. 5-Figure 13.
As shown in Figure 5, at first on SOI substrate 100, prepare pressure-active element 200, for example voltage dependent resistor (VDR).Wherein, the label 10 among Fig. 5 refers to the insulation course of SOI substrate 100, and label 10a and 10b refer to first silicon layer and second silicon layer of SOI substrate 100 respectively.
Afterwards, as shown in Figure 6, to the wiring of metallizing of formed pressure-active element 200, thereby form metal wiring layer 3.
Afterwards, as shown in Figure 7, on metal wiring layer 3, form passivation layer 4, and reserve opening 9 in the position that need in later step, prepare silicon through hole 50.This passivation layer 4 can form through chemical vapor deposition process, and the material of this passivation layer 4 can be monox or silicon nitride.
Afterwards, as shown in Figure 8, on the metal wiring layer 3 of deposit passivation layer 4 not, form coat of metal 5.This coat of metal 5 can be through chemical vapour deposition or physical vapor deposition or the formation of other technology.Opening 9 is reserved in the position that likewise, need in later step, prepare silicon through hole 50.And the material of this coat of metal 5 can be Ti or TiW.
Afterwards, as shown in Figure 9, form the hole in the position of estimating preparation silicon through hole 50, and on this bottom, hole and sidewall, form insulation course and diffusion impervious layer.Can adopt deep reaction ion etching (DRIE) technology or other etching technics to form this hole 50.This hole 50 is the high holes of depth-to-width ratio.According to the requirement of pressure sensor unit size, the diameter in this hole 50 can be positioned at 5 microns to 50 microns scope, and the degree of depth in this hole 50 can be positioned at 80 microns to 200 microns scope.
Afterwards; Shown in figure 10, the side that does not form pressure-active element 200 of this SOI substrate 100 and interim bonding disk 30 are carried out bonding (for example, carrying out bonding through bonding glue 30a); And this SOI substrate 100 carried out thinning back side, thereby the hole that before exposing, forms forms silicon through hole 50.
Afterwards, shown in figure 11, in silicon through hole 50, form Seed Layer, and filled conductive material in this silicon through hole 50, for example copper, tungsten, polysilicon, conducting polymer, metal-polymer compound substance etc. afterwards.Certainly; Also can be in Figure 10 before substrate that will have pressure-active element 200 100 and interim bonding disk 30 carry out bonding; On interim bonding disk 30, form Seed Layer earlier; And afterwards in Figure 11,, come the filled conductive material through electroplating technology through from the direction of interim bonding disk 30 to the substrate that has pressure-active element 200 100.Afterwards, shown in figure 11, on silicon through hole 50, make metal salient point 70.
Afterwards, shown in figure 12, remove the partial SOI substrate 100 of pressure-active element 200 belows, until exposing insulation course 10, thereby formed the pressure-sensitive film that is positioned at pressure-active element 200 belows.Wherein, can remove said partial SOI substrate through the method that adopts the ICP dry etching.Like this, through adopting the SOI substrate, can the strict homogeneity of controlling pressure-sensitive film.
Afterwards, shown in figure 13, remove interim bonding disk 30, thereby and formed space among Figure 12 sealed form sealed cavity 40.Wherein, can form sealed cavity 40 through filling filler in the formed space in Figure 12, wherein, filler can be polymer latex or other materials.Certainly; Except forming the sealed cavity 40 this modes through filling filler 60; Can also form sealed cavity 40 through designing the metallic packing ring (not shown) around formed each pressure sensor chip, perhaps form sealed cavity 40 through the side that does not form pressure-active element 200 of silicon-on-insulator substrate 100 and another chip are carried out bonding.But this and invention are not limited to sealing means described herein, and other sealing means also are feasible, as long as can guarantee the impermeability of sealed cavity 40.
Certainly; For integrated pressure signal processing circuit in pressure transducer; Can also be shown in figure 14; To carry out bonding with treatment circuit that pressure signal is handled 1 and the substrate 100 that has pressure-active element 200, the interim bonding disk 30 in the wherein aforementioned flow process should just be removed after treatment circuit 1 and substrate 100 bondings, is not damaged to protect the pressure-active element 200 that forms in the aforementioned flow process.Wherein, In order to ensure the impermeability of sealed cavity, can use organic gel material (for example, polymer latex) to fill and form hermetically-sealed construction 40 at formed sensor periphery; Can certainly pass through intermetallic compound bonding structure (for example, Au-Sn bonding structure) and form sealed cavity 40.But, one of skill in the art will appreciate that above-described sealing means only is example but not is used to limit protection scope of the present invention, in fact, other sealing means also are feasible, as long as can guarantee the impermeability of sealed cavity 40.And treatment circuit 1 also can be exported the signal after the processing through through-silicon via structure.And the step of Figure 14 is optional.
More than combine preferred implementation that the present invention is described in detail; Be to be understood that; Under the situation that does not deviate from spirit and scope of the invention; Can carry out various modifications and distortion to the present invention, and be not limited to order recited above according to the preparation flow of pressure transducer of the present invention, some step can change or omit each other.
Claims (8)
1. pressure transducer; This pressure transducer comprises substrate (100), pressure-active element (200) and extraction electrode thereof and silicon through hole (50); Wherein, Said pressure-active element (200) and extraction electrode thereof are positioned at a side of said substrate (100), and said silicon through hole (50) runs through the extraction electrode interconnection of an end and the said pressure-active element (200) of said substrate (100) and said silicon through hole (50), and the other end of said silicon through hole (50) is as the output terminal of said pressure transducer; Said pressure transducer also comprises the sealed cavity (40) that is positioned at said pressure-active element (200) below, and forms pressure-sensitive film between said pressure-active element (200) and the said sealed cavity (40).
2. pressure transducer according to claim 1, wherein, said substrate (100) is a silicon-on-insulator substrate.
3. pressure transducer according to claim 1, wherein, said pressure transducer also comprises the treatment element of handling through the signal of said silicon through hole (50) output (1), this treatment element (1) has the electrode that is electrically connected with said silicon through hole (5).
4. method for preparing pressure transducer, this method comprises:
Substrate is provided;
Preparation pressure-active element and extraction electrode thereof on a side of substrate, and carry out graphical;
The electrical connection hole for preparing said pressure-active element extraction electrode in a side that is formed with said pressure-active element of said substrate;
Thereby the side that is not formed with said pressure-active element of said substrate is thinned to exposes said electrical connection hole and form the silicon through hole;
On a side that does not form said pressure-active element of said substrate, on said silicon through hole, prepare metal salient point;
Forming sealed cavity and the pressure-sensitive film between said pressure-active element and said sealed cavity below the said pressure-active element.
5. method according to claim 4, wherein, said method also comprises:
Before said substrate is carried out attenuate, on a side that is formed with said pressure-active element of said substrate, form diaphragm; And
After forming said sealed cavity, remove said diaphragm.
6. method according to claim 4, wherein, said substrate is a silicon-on-insulator substrate.
7. method according to claim 6 wherein, saidly comprises forming sealed cavity and the pressure-sensitive film between said pressure-active element and said sealed cavity below the said pressure-active element:
A side that does not form said pressure-active element in said silicon-on-insulator substrate is carried out etching till the insulation course that exposes said silicon-on-insulator substrate to part below being positioned at said pressure-active element;
With a side that does not form said pressure-active element and another chip bonding of said silicon-on-insulator substrate, thereby form said sealed cavity.
8. method according to claim 4 wherein, saidly comprises forming sealed cavity and the pressure-sensitive film between said pressure-active element and said sealed cavity below the said pressure-active element:
Etching is positioned at the part of the said substrate of said pressure-active element below;
A side that does not form said pressure-active element of said substrate is carried out bonding with the treatment element that pressure signal is handled;
Form the sealed cavity of said pressure transducer.
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Cited By (7)
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| CN103115703A (en) * | 2013-01-21 | 2013-05-22 | 西北工业大学 | Micro capacitance-type wall shear stress sensor and manufacturing method thereof based on through silicon via (TSV) technology |
| CN103964366A (en) * | 2013-01-30 | 2014-08-06 | 因文森斯公司 | Internal electrical contact for enclosed MEMS devices |
| CN104124224A (en) * | 2013-04-29 | 2014-10-29 | 英飞凌科技股份有限公司 | Chip package and method of manufacturing same |
| CN104697700A (en) * | 2015-02-06 | 2015-06-10 | 北京大学 | Piezo-resistance type pressure meter chip structure and preparation method thereof |
| CN106660782A (en) * | 2014-07-07 | 2017-05-10 | 因文森斯公司 | Integrated cmos and mems sensor fabrication method and structure |
| CN111682108A (en) * | 2020-02-29 | 2020-09-18 | 浙江集迈科微电子有限公司 | Three-dimensional inductor manufacturing method |
| TWI778684B (en) * | 2021-06-21 | 2022-09-21 | 大陸商鵬鼎控股（深圳）股份有限公司 | Pressure sensitive printed circuit board and method for manufacturing the same |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103115703A (en) * | 2013-01-21 | 2013-05-22 | 西北工业大学 | Micro capacitance-type wall shear stress sensor and manufacturing method thereof based on through silicon via (TSV) technology |
| CN103115703B (en) * | 2013-01-21 | 2015-07-08 | 西北工业大学 | Manufacturing method of micro capacitance-type wall shear stress sensor based on through silicon via (TSV) technology |
| CN103964366A (en) * | 2013-01-30 | 2014-08-06 | 因文森斯公司 | Internal electrical contact for enclosed MEMS devices |
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| CN104124224A (en) * | 2013-04-29 | 2014-10-29 | 英飞凌科技股份有限公司 | Chip package and method of manufacturing same |
| CN104124224B (en) * | 2013-04-29 | 2017-07-18 | 英飞凌科技股份有限公司 | Chip package and the method for manufacturing the chip package |
| CN106660782A (en) * | 2014-07-07 | 2017-05-10 | 因文森斯公司 | Integrated cmos and mems sensor fabrication method and structure |
| CN106660782B (en) * | 2014-07-07 | 2019-07-23 | 因文森斯公司 | Aggregation formula CMOS and MEMS sensor production method and structure |
| CN104697700A (en) * | 2015-02-06 | 2015-06-10 | 北京大学 | Piezo-resistance type pressure meter chip structure and preparation method thereof |
| CN104697700B (en) * | 2015-02-06 | 2017-07-14 | 北京大学 | A kind of piezoresistive pressure gage chip structure and preparation method thereof |
| CN111682108A (en) * | 2020-02-29 | 2020-09-18 | 浙江集迈科微电子有限公司 | Three-dimensional inductor manufacturing method |
| TWI778684B (en) * | 2021-06-21 | 2022-09-21 | 大陸商鵬鼎控股（深圳）股份有限公司 | Pressure sensitive printed circuit board and method for manufacturing the same |
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Effective date of registration: 20201026 Address after: Room 1303, No. 99, Songyu south 2nd Road, Xiamen City, Fujian Province Patentee after: Xiamen Qingxin Integrated Technology Co., Ltd Address before: 100084 Beijing City, Haidian District Tsinghua Yuan Patentee before: TSINGHUA University |