CN106112162A - A kind of for reducing the method that stannum bismuth solder joint intermetallic compound is formed - Google Patents
A kind of for reducing the method that stannum bismuth solder joint intermetallic compound is formed Download PDFInfo
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- CN106112162A CN106112162A CN201610592181.0A CN201610592181A CN106112162A CN 106112162 A CN106112162 A CN 106112162A CN 201610592181 A CN201610592181 A CN 201610592181A CN 106112162 A CN106112162 A CN 106112162A
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- solder
- intermetallic compound
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- stannum
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The invention discloses a kind of for reducing a kind of method that stannum bismuth solder joint intermetallic compound is formed, concrete steps: one is to make PCB substrate or substrate components；Two is to use metal surface plating process to plate the solder that a layer thickness is 5 10um on the Cu pad of PCB substrate described in step one or substrate components；Three is to burn-on in refluxing unit the solder that a layer thickness is 10 200um with the reflux temperature curve of tin-bismuth solder on the coating of the Cu pad of PCB substrate described in step 2 or substrate components；Four is with another element, PCB substrate described in step 3 or substrate components to be made reflow soldering process, and i.e. obtains micro-interconnection welding spot structure.The present invention can be obviously reduced the thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joint, thus reduces the harm caused because of the generation of blocked up intermetallic compound, thus improves the life-span of whole electronic product.
Description
Technical field
The invention belongs to process for fabrication of semiconductor device field and microelectronic interconnection encapsulation field, be specifically related to a kind of for
Reduce the method that stannum bismuth solder joint intermetallic compound is formed.
Background technology
Along with nowadays enhancing to environmental protection consciousness, lead has been listed in the chemicals maximum to human body and environmental injury
Matter, so existing Electronic Packaging will be based on lead-free solder.The lead-free solder generally acknowledged at present is: with Sn as matrix, add Ag, Cu,
The alloying elements such as Sb, Bi.Stannum bismuth solder, with the performance of its excellence and cheap price, becomes main in microelectronic interconnection encapsulation
Welding material.Tradition Sn-58Bi eutectic solder fusing point is 138 DEG C, and what the lifting of temperature curve can bring is intermetallic compound
A lot of problems such as growth is swift and violent and solder is oxidizable.
The problem that generally there is the intermetallic compound that pad generates with solder reaction in Electronic Packaging.Solder and pad
Between formed intermetallic compound be its be mechanically connected and heat radiation basis, the formation of suitable intermetallic compound can realize pricker
Metallurgical binding good between material and substrate.In solder reflow process, tin-bismuth solder and Cu occur interfacial reaction to generate between metal
Compound, the appearance of intermetallic compound shows that tin-bismuth solder is well combined with Cu matrix.But intermetallic compound has intrinsic
Fragility, is microcrack initiation source, and its many thermophysical property, such as thermal coefficient of expansion, elastic modelling quantity, conductive and heat-conductive coefficient etc.
It is all to have a certain distance with all kinds of solders and matrix material.This external ag(e)ing process at solder joint and product military service process
In, new intermetallic compound is likely to generate, and the appearance of fragility mesophase can change original interface microstructure, can be directly
Affect the performance at welding point interface, thus have influence on the reliability of Electronic Packaging.
General Cu welding plate forms Cu with solder system bismuth interface6Sn5Compound, between interface metal the growth of compound be by
The atoms permeating mechanism control of Cu element.Typically along with the prolongation of aging time, also can at Cu welding plate and tin-bismuth solder interface
Grow Cu3Sn compound, also there will be segregation and kirkendall (Ke Kendaer) cavitation of Bi.Produced Cu-
Sn compound is brittle substance, when forming thicker Cu-Sn compound, can greatly reduce the serviceability of weld, be subject to
The brittle fracture at solder joint interconnection can be caused during to bigger stress.Therefore, extending connector service life it is crucial that control boundary
Face intermetallic compound and the growth of ag(e)ing process.
For improving the stability of soldered fitting, carry out the substantial amounts of research to interconnection welding point interface IMC Rotating fields.Because
Intermetallic compound at room temperature grows very slow, in order to shorten experimental period, and the side that the commonly used high-temperature aging of people is aging
Method carrys out the formation of intermetallic compound under the conditions of Simulated Service.
Lead-free solder is heated to more than fusing point, and solder carries out moistening, expansion through flux cleaning metal surface after melting
Scattered, metallurgical binding, finally forms intermetallic compounds layer between solder and metal surface, forms solder joint after cooling.Formed good
The key of good solder joint is not only in that the good wettability of weld interface, also includes the intermetallic compound forming suitable thickness.
The basic role of solder joint is electrical connection and is mechanically connected, and the destruction of a solder joint frequently can lead to the mistake of whole encapsulating structure
Effect, the reliability of solder joint plays the effect of key to the life-span of whole device, and therefore controlling intermetallic compound increase can improve
The reliability of solder joint.Generally control intermetallic compound growth is degree and the pad nickel plating of the beat exposure by controlling solder joint
Method, but because of the thermal cycle that solder joint have to cause through reflux technique repeatedly, the degree increasing beat exposure, control can be caused
The method of solder joint beat exposure processed is not-so-practical, and the relatively costly and meeting butt welding point mechanical performance of pad nickel plating has an impact.
Therefore, the defect that the shortcoming and blocked up intermetallic compound by avoiding said method is brought, the present inventor carries
Go out on the pad method of coating to reduce the method that intermetallic compound is formed.
Summary of the invention
The invention aims to overcome the shortcoming of prior art, it is provided that one is used for reducing stannum bismuth solder joint intermetallic
The method that thing is formed.The present invention can be obviously reduced the thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joint,
Thus reduce the harm caused because of the generation of blocked up intermetallic compound.
For reaching above-mentioned purpose, the present invention adopts the following technical scheme that
A kind of for reducing the method that between stannum bismuth solder joint, intermetallic compound is formed, comprise the steps:
(1) PCB substrate or substrate components are made；
(2) metal surface plating process is used to plate one on the Cu pad of step (1) described PCB substrate or substrate components
Layer thickness is the solder of 5-10um；
(3) with the reflux temperature of tin-bismuth solder on the coating of step (2) described PCB substrate or the Cu pad of substrate components
Curve is burn-on the solder that a layer thickness is 10-200um in refluxing unit；
(4) step (3) described PCB substrate or substrate components and another element are made reflow soldering to process, i.e. obtain micro-mutually
Even welding spot structure.
Further, step (1) described making PCB substrate or the technological process of substrate components, including selection, expose, develop,
Etching and the demoulding.
Further, the material of described PCB substrate is DBC ceramic substrate, insulating metal substrate, glass cloth substrate or flexible base
Any one in plate.
Further, any one during the material of described substrate components is semiconductor chip, silicon, macromolecule or glass
Kind.
Further, step (2) described metal surface plating process is appointing in plating, chemical plating, thermal spray or hot-dip
Meaning one.
Further, step (2) described solder is Sn base solder.
Further, step (3) described solder is tin-bismuth solder.
Further, step (2) described solder and step (3) described solder, when described solder uses Sn base solder and described
When solder uses tin-bismuth solder, then the melting temperature using Sn base solder coating is higher 20 DEG C-100 than tin-bismuth solder welding temperature
℃。
Further, setting of described tin-bismuth solder rework profile is determined by the melting temperature of tin-bismuth solder, its minimum backflow
Temperature is more than the melting temperature 138 DEG C of stannum bismuth solder.
Advantages of the present invention and beneficial effect major embodiment are as follows:
1, the present invention adds Sn base solder coating at Cu pad and forms micro-interconnection welding spot structure after reflow treatment.Along with
The prolongation of aging time, the thickness of intermetallic compound becomes thicker.In aging time is 0-10 days, SnBi/Cu interface
The intermetallic compound thickness of growth is roughly the same with the intermetallic compound thickness of SnBi/Sn base solder/Cu interface growth.
After timeliness 20 days, the intermetallic compound thickness relatively SnBi/Cu interface growth of SnBi/Sn base solder/Cu interface growth
Intermetallic compound thickness decrease 33%-54%.After timeliness 30 days, the gold of SnBi/Sn base solder/Cu interface growth
The intermetallic compound thickness that between genus, compound thickness grows compared with SnBi/Cu interface reduces 50%-70%, is indicated above adding
Sn base solder can significantly suppress the growth of intermetallic compound.Because at the growth of IMC, IMC layer and solder interface
Stress constantly increases, and can cause the inefficacy of solder joint when stress increases and reaches a certain amount of, consequently, it is possible to cause whole device
Lost efficacy.
2, the present invention can be obviously reduced the thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joint, thus
Reduce the harm caused because of the generation of blocked up intermetallic compound.
3, the present invention can significantly improve the reliability between micro-interconnection solder joint that tin-bismuth solder is formed, thus improves whole further
The life-span of individual electronic product.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet describing the interconnection solder joint formed between stannum bismuth solder and coating Cu pad.
Fig. 2 is the microscopical image of the cross-sectional scanning electron (SEM) plating 5um solder on Cu pad thick for 36um.
Fig. 3 is to describe on substrate the Cu pad containing coating Sn0.7Cu solder to reflux after 30s at peak temperature 160 DEG C,
Form Sn58Bi/Sn0.7Cu/Cu interface image.A ()-(d) is timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, 30 days
The image of the scanning electron microscope at Sn58Bi/Sn0.7Cu/Cu interface.
Fig. 4 is that to describe on substrate containing coating be that the Cu pad of Sn1.2Cu solder refluxes 30s at peak temperature 160 DEG C
After, form Sn58Bi/Sn1.2Cu/Cu interface image.A ()-(d) is timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, 30 days
The image of the scanning electron microscope at Sn58Bi/Sn1.2Cu/Cu interface.
Fig. 5 be describe on substrate containing coating be the Cu pad of Sn3.0Ag0.5Cu solder peak temperature 160 DEG C next time
After stream 30s, form Sn58Bi/Sn3.0Ag0.5Cu/Cu interface image.A ()-(d) is timeliness 0 day at 120 DEG C respectively, 10
My god, 20 days, the image of the scanning electron microscope at 30 days Sn58Bi/Sn3.0Ag0.5Cu/Cu interfaces.
Fig. 6 be describe on substrate containing coating be the Cu pad of Sn4.0Ag0.5Cu solder peak temperature 160 DEG C next time
After stream 30s, form Sn58Bi/Sn4.0Ag0.5Cu/Cu interface image.A ()-(d) is timeliness 0 day at 120 DEG C respectively, 10
My god, 20 days, the image of the scanning electron microscope at 30 days Sn58Bi/Sn4.0Ag0.5Cu/Cu interfaces.
Fig. 7 is to be described in Sn58Bi solder at peak temperature 160 DEG C to reflux after 30s on Cu pad, forms Sn58Bi/Cu
Interface image, (a)-(d) is timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, the scanning electron at 30 days Sn58Bi/Cu interfaces
Microscopical image.
Interface the formed IMC thickness that Fig. 8 is different and the graph of a relation of aging time.
Main element symbol description in figure: 10-PCB substrate, 11-Cu pad, 12-Sn base solder, 13-intermetallic
Thing, 14-tin-bismuth solder, 15-substrate components.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is described in further detail.Should be appreciated that specific embodiment described herein is used only for explaining the present invention,
It is not intended to limit the present invention.
As it is shown in figure 1, be the flow process signal of the interconnection solder joint formed between stannum bismuth solder and coating Cu pad in the present invention
Figure, wherein shown in figure (a), first makes a PCB substrate 10, goes into battle in PCB substrate 10 and list 4*4, a diameter of 0.6mm, thickness
The Cu pad 11 of 36um.Figure (b) uses or immersion to be plated on the Cu pad 11 of PCB substrate by Sn base solder 12, forms one
Layer thickness about 5um coating, its coating material is Sn-Cu solder or Sn-Ag-Cu solder etc..Figure (c) in this PCB substrate 10 with
Peak temperature 160 DEG C, the counterflow condition of return time 30s is burn-on the stannum bismuth eutectic solder 14 of 100um thickness.Then plating is used
Technique is gone into battle at substrate components 15 and is listed 4*4, a diameter of 0.6mm, and the Cu pad 11 of thickness 36um, by or immersion by Sn
Base solder 12 is plated on the Cu pad 11 of substrate, forms a layer thickness about 5um coating.Scheme (d) by above-mentioned PCB substrate 10 with above-mentioned
Substrate components 15, peak temperature 160 DEG C, makees follow-up interconnection under the counterflow condition of return time 30s, i.e. obtain micro-interconnection solder joint
Structure.It is placed on forming different interconnection solder joints at aging temp 120 DEG C, carries out different aging times respectively, respectively 0
My god, 10 days, 20 days, 30 days.Can find to grow the intermetallic compound 13 of different-thickness by different aging times.
Embodiment 1
Selection glass cloth substrate, Si chip, Sn0.7Cu solder are as the raw material of experiment, first, on glass cloth substrate
Array goes out the Cu pad of 4*4, a diameter of 0.6mm, thickness 36um.By or immersion, Sn0.7Cu solder is plated in glass cloth
On the Cu pad of substrate, the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that the sample of scanning electron microscope image as shown in Figure 2.
Then, with peak temperature 160 DEG C in this PCB substrate, the counterflow condition of return time 30s burn-on 100um thickness stannum bismuth altogether
Brilliant solder.
Then going into battle at Si chip with electroplating technology and list 4*4, the Cu pad of a diameter of 0.6mm, thickness 36um, by warm
Sn0.7Cu solder is plated on the Cu pad of Si chip by immersion plating technology, and the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that
The sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on the Cu pad of correspondence, at peak temperature
160 DEG C, under return time 30s counterflow condition, form PCB substrate/Sn58Bi/Si chip micro-interconnection welding spot structure.
Finally, in order to the interface under different timeliness is scanned electron microscope observation, the last sample that will be formed
Putting into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, goes sample taking-up acetone respectively
Oil removing stain.With 1000#, 2000#, 2400#, 4000# sand paper will interconnect solder joint water mill, through SiO2After polishing fluid polishing, use
FeCl3Corrosive liquid corrodes, and finally demonstrates the intermetallic compound generated between solder joint, sees with scanning electron microscope after the metal spraying of surface
Examine.As shown in Figure 8, the intermetallic compound of variable thickness, as shown in Figure 7, the Sn58Bi/Cu of nonageing it are respectively formed after Reflow Soldering
Intermetallic compound thickness is about 0.38um.
As it is shown on figure 3, the Sn58Bi/Sn0.7Cu/Cu intermetallic compound thickness for nonageing is about 0.7508um, warp
Crossing timeliness 30 days at 120 DEG C, Sn58Bi/Sn0.7Cu/Cu intermetallic compound thickness length is to 3.298um, as it is shown in fig. 7, warp
Crossing at 120 DEG C timeliness after 30 days, Sn58Bi/Cu intermetallic compound thickness has been grown to about 6.59um.Thus prove, add plating
Layer Sn0.7Cu can significantly reduce the thickness of compound between interface metal.
Embodiment 2
Selection glass cloth substrate, Si chip, Sn1.2Cu solder are as the raw material of experiment, first, on glass cloth substrate
Array goes out the Cu pad of 4*4, a diameter of 0.6mm, thickness 36um.By or immersion, Sn1.2Cu solder is plated in glass cloth
On the Cu pad of substrate, the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that the sample of scanning electron microscope image as shown in Figure 2.
Then, with peak temperature 160 DEG C in this PCB substrate, the counterflow condition of return time 30s burn-on 100um thickness stannum bismuth altogether
Brilliant solder.
Then going into battle at Si chip with electroplating technology and list 4*4, the Cu pad of a diameter of 0.6mm, thickness 36um, by warm
Sn1.2Cu solder is plated on the copper pad of Si chip by immersion plating technology, and the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that
The sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on the Cu pad of correspondence, at peak temperature
160 DEG C, under return time 30s counterflow condition, form PCB substrate/Sn58Bi/Si chip micro-interconnection welding spot structure.
Finally, in order to the interface under different timeliness is scanned electron microscope observation, the last sample that will be formed
Putting into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, goes sample taking-up acetone respectively
Oil removing stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, through SiO2After polishing fluid polishing, use FeCl3Rotten
Erosion corrosion, finally demonstrates the intermetallic compound of generation, uses scanning electron microscopic observation after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound of variable thickness, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing it is respectively formed after fluid welding
It is about 0.38um.
As shown in Figure 4, the Sn58Bi/Sn1.2Cu/Cu intermetallic compound thickness for nonageing is about 0.6366um, warp
Crossing timeliness 30 days at 120 DEG C, Sn58Bi/Sn1.2Cu/Cu intermetallic compound thickness length is to 2.889um, as it is shown in fig. 7, warp
Crossing at 120 DEG C timeliness after 30 days, Sn58Bi/Cu intermetallic compound thickness has been grown to about 6.59um.Thus prove, add plating
Layer Sn1.2Cu can significantly reduce the thickness of compound between interface metal.
Embodiment 3
Selection glass cloth substrate, Si chip, Sn3.0Ag0.5Cu solder are as the raw material of experiment, first, at glass cloth
Substrate is gone into battle and is listed 4*4, a diameter of 0.6mm, the Cu pad of thickness 36um.By or immersion by Sn3.0Ag0.5Cu solder
Being plated on the Cu pad of glass cloth substrate, the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that scanning electron microscope as shown in Figure 2
The sample of image.Then, with peak temperature 160 DEG C in this PCB substrate, the counterflow condition of the return time 30s 100um that burn-ons is thick
The stannum bismuth eutectic solder of degree.
Then going into battle at Si chip with electroplating technology and list 4*4, the Cu pad of a diameter of 0.6mm, thickness 36um, by warm
Sn3.0Ag0.5Cu solder is plated on the copper pad of Si chip by immersion plating technology, and the immersion plating time is 10s, forms the coating of about 5um,
Obtain the sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on the Cu pad of correspondence, at peak value
Temperature 160 DEG C, forms PCB substrate/Sn58Bi/Si chip micro-interconnection welding spot structure under return time 30s counterflow condition.
Finally, in order to the interface under different timeliness is scanned electron microscope observation, the last sample that will be formed
Putting into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, goes sample taking-up acetone respectively
Oil removing stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, through SiO2After polishing fluid polishing, use FeCl3Rotten
Erosion corrosion, finally demonstrates the intermetallic compound of generation, uses scanning electron microscopic observation after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound of variable thickness, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing it is respectively formed after fluid welding
It is about 0.38um.
As it is shown in figure 5, be nonageing Sn58Bi/Sn3.0Ag0.5Cu/Cu intermetallic compound thickness be about
0.9209um, through timeliness 30 days at 120 DEG C, Sn58Bi/Sn3.0Ag0.5Cu/Cu intermetallic compound thickness length is extremely
2.073um, as it is shown in fig. 7, after timeliness 30 days at 120 DEG C, Sn58Bi/Cu intermetallic compound thickness is grown to about
6.59um.Thus prove, add coating Sn3.0Ag0.5Cu and can significantly reduce the thickness of compound between interface metal.
Embodiment 4
Selection glass cloth substrate, Si chip, Sn4.0Ag0.5Cu solder are as the raw material of experiment, first, at glass cloth
Substrate is gone into battle and is listed 4*4, a diameter of 0.6mm, the Cu pad of thickness 36um.By or immersion by Sn4.0Ag0.5Cu solder
Being plated on the Cu pad of glass cloth substrate, the immersion plating time is 10s, forms the coating of about 5um, it is thus achieved that scanning electron microscope as shown in Figure 2
The sample of image.Then, with peak temperature 160 DEG C in this PCB substrate, the counterflow condition of the return time 30s 100um that burn-ons is thick
The stannum bismuth eutectic solder of degree.
Then going into battle at Si chip with electroplating technology and list 4*4, the Cu pad of a diameter of 0.6mm, thickness 36um, by warm
Sn4.0Ag0.5Cu solder is plated on the copper pad of Si chip by immersion plating technology, and the immersion plating time is 10s,
Form the coating of about 5um, it is thus achieved that the sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is fallen
Being buckled on the Cu pad of correspondence, peak temperature 160 DEG C, return time 30s counterflow condition forms PCB substrate/Sn58Bi/Si core
Sheet micro-interconnection welding spot structure.
Finally, in order to the interface under different timeliness is scanned electron microscope observation, the last sample that will be formed
Putting into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, goes sample taking-up acetone respectively
Oil removing stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, through SiO2After polishing fluid polishing, use FeCl3Rotten
Erosion corrosion, finally demonstrates the intermetallic compound of generation, uses scanning electron microscopic observation after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound of variable thickness, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing it is respectively formed after fluid welding
It is about 0.38um.
As shown in Figure 6, the Sn58Bi/Sn4.0Ag0.5Cu/Cu intermetallic compound thickness for nonageing is about
0.7926um, through timeliness 30 days at 120 DEG C, Sn58Bi/Sn4.0Ag0.5Cu/Cu intermetallic compound thickness length is extremely
2.004um, as it is shown in fig. 7, after timeliness 30 days at 120 DEG C, Sn58Bi/Cu intermetallic compound thickness is grown to about
6.59um.Thus prove, add coating Sn4.0Ag0.5Cu and can significantly reduce the thickness of compound between interface metal.
Provable by above instantiation, can significantly reduce stannum bismuth solder joint gold according to the concrete grammar of the present invention
Between genus, compound is formed.
The above, the only present invention preferably detailed description of the invention.Certainly, the present invention also can have other multiple enforcement
Example, without departing substantially from the present invention spirit and essence in the case of, any those familiar with the art, when can according to this
Invention is made various corresponding equivalence and is changed and deformation, all should belong to the protection domain of appended claims of the invention.
Claims (8)
1. one kind is used for reducing the method that stannum bismuth solder joint intermetallic compound is formed, it is characterised in that comprise the steps:
(1) PCB substrate or substrate components are made；
(2) metal surface plating process is used to plate thick layer on the Cu pad of step (1) described PCB substrate or substrate components
Degree is the solder of 5-10um；
(3) with the reflux temperature curve of tin-bismuth solder on the coating of step (2) described PCB substrate or the Cu pad of substrate components
A layer thickness of burn-oning in refluxing unit is the solder of 10-200um；
(4) with another element, step (3) described PCB substrate or substrate components are made reflow soldering to process, i.e. obtain micro-interconnection weldering
Dot structure.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that: described
The material of PCB substrate is any one in DBC ceramic substrate, insulating metal substrate, glass cloth substrate or flexible base board.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that: described lining
The material of end element is any one in semiconductor chip, silicon, macromolecule or glass.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that: step
(2) described metal surface plating process is any one in plating, chemical plating, thermal spray or hot-dip.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that: step
(2) described solder is Sn base solder.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that: step
(3) described solder is tin-bismuth solder.
The method that minimizing stannum bismuth solder joint intermetallic compound the most according to claim 1 is formed, it is characterised in that step
(2) described solder and step (3) described solder, when described solder uses Sn base solder and described solder uses tin-bismuth solder,
The melting temperature then using Sn base solder coating is higher 20 DEG C-100 DEG C than tin-bismuth solder welding temperature.
8. according to the method reducing the formation of stannum bismuth solder joint intermetallic compound described in claim 6 or 7, it is characterised in that: institute
Stating setting of tin-bismuth solder rework profile to be determined by the melting temperature of tin-bismuth solder, its minimum reflux temperature is more than stannum bismuth solder
Melting temperature 138 DEG C.
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| CN201610592181.0A CN106112162B (en) | 2016-07-25 | 2016-07-25 | A kind of method for being used to reduce the formation of tin bismuth solder joint intermetallic compound |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110666267A (en) * | 2019-10-11 | 2020-01-10 | 江苏科技大学 | Tin soldering point alloying forming method |
| CN113172291A (en) * | 2021-04-09 | 2021-07-27 | 哈尔滨工业大学 | Preparation method of low-temperature high-strength connecting welding spot in PoP packaging process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110666267B (en) * | 2019-10-11 | 2021-09-24 | 江苏科技大学 | Tin soldering point alloying forming method |
| CN113172291A (en) * | 2021-04-09 | 2021-07-27 | 哈尔滨工业大学 | Preparation method of low-temperature high-strength connecting welding spot in PoP packaging process |
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| CN106112162B (en) | 2018-04-17 |
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Effective date of registration: 20190612 Address after: 215300 Room 18, 288 Shipulidu Road, Qiandeng Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: Green Chen Tai Metal (Kunshan) Co., Ltd. Address before: 212003 Mengxi Road, Jingkou District, Zhenjiang, Jiangsu Province, No. 2 Patentee before: Jiangsu University of Science and Technology |