CN106112162B - A kind of method for being used to reduce the formation of tin bismuth solder joint intermetallic compound - Google Patents
A kind of method for being used to reduce the formation of tin bismuth solder joint intermetallic compound Download PDFInfo
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- CN106112162B CN106112162B CN201610592181.0A CN201610592181A CN106112162B CN 106112162 B CN106112162 B CN 106112162B CN 201610592181 A CN201610592181 A CN 201610592181A CN 106112162 B CN106112162 B CN 106112162B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The invention discloses a kind of a kind of method for being used to reduce the formation of tin bismuth solder joint intermetallic compound, specific steps：First, make PCB substrate or substrate components；Second, metal surface plating process is used to plate solder of a layer thickness for 5 10um on the Cu pads of PCB substrate described in step 1 or substrate components；Third, burn-on on the coating of PCB substrate described in step 2 or the Cu pads of substrate components using the reflux temperature curve of tin-bismuth solder in refluxing unit solder of a layer thickness as 10 200um；Fourth, PCB substrate described in step 3 or substrate components are made reflow soldering processing with another element, that is, obtain micro- interconnection welding spot structure.The thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joints can be obviously reduced in the present invention, endangered so as to reduce caused by the generation of blocked up intermetallic compound, so as to improve the service life of whole electronic product.
Description
Technical field
The invention belongs to process for fabrication of semiconductor device field and microelectronic interconnection encapsulation field, and in particular to one kind is used for
Reduce the method that tin bismuth solder joint intermetallic compound is formed.
Background technology
With the nowadays enhancing to environmental protection consciousness, lead has been listed in the chemicals to human body and environmental injury maximum
Matter, so existing Electronic Packaging will be based on lead-free solder.Generally acknowledged lead-free solder is at present:Using Sn as matrix, addition Ag, Cu,
The alloying elements such as Sb, Bi.Tin bismuth solder becomes main in microelectronic interconnection encapsulation with its excellent performance and cheap price
Welding material.Traditional Sn-58Bi eutectic solders fusing point is 138 DEG C, and what the lifting of temperature curve can be brought is intermetallic compound
Grow the swift and violent and oxidizable many problems of grade of solder.
The problem of intermetallic compound that generally existing pad is generated with solder reaction in Electronic Packaging.Solder and pad
Between the intermetallic compound that is formed be that it is mechanically connected and pricker can be achieved in the basis of heat dissipation, the formation of appropriate intermetallic compound
Good metallurgical binding between material and substrate.In solder reflow process, between tin-bismuth solder and Cu generation interfacial reaction generation metals
Compound, the appearance of intermetallic compound show that tin-bismuth solder is well combined with Cu matrixes.But intermetallic compound has intrinsic
Brittleness, is microcrack initiation source, and its many thermophysical property, such as thermal coefficient of expansion, elasticity modulus, conductive and heat-conductive coefficient etc.
All it is to have a certain distance with all kinds of solders and basis material.In addition in the ag(e)ing process and product military service process in solder joint
In, new intermetallic compound may also generate, and the appearance of brittleness interphase can change original interface microstructure, can be direct
The performance at welding point interface is influenced, so as to influence the reliability of Electronic Packaging.
General Cu welding plates form Cu with solder system bismuth interface6Sn5Compound, between interface metal the growth of compound be by
The atoms permeating mechanism control of Cu elements.Generally with the extension of aging time, can also in Cu welding plates and tin-bismuth solder interface
Grow Cu3Sn compounds, also occur the segregation and kirkendall (Ke Kendaer) cavitation of Bi.Caused Cu-
Sn compounds are brittle substances, when forming thicker Cu-Sn compounds, can greatly reduce the performance of weld, by
The brittle fracture at solder joint interconnection can be caused during to larger stress.Therefore, the key of extending connector service life is control circle
The growth of face intermetallic compound and ag(e)ing process.
To improve the stability of soldered fitting, the research largely to interconnecting welding point interface IMC Rotating fields has been carried out.Because
Intermetallic compound is grown very slowly at room temperature, and in order to shorten experimental period, people generally use the side of high-temperature aging aging
Method carrys out the formation of intermetallic compound under the conditions of Simulated Service.
Lead-free solder is heated to more than fusing point, and solder is soaked through flux cleaning metal surface after melting, expanded
Dissipate, metallurgical binding, intermetallic compounds layer is finally formed between solder and metal surface, solder joint is formed after cooling.Formed good
The key of good solder joint is not only in that the good wetability of weld interface, further includes the intermetallic compound to form suitable thickness.
The basic role of solder joint is electrical connection and mechanical connection, and the destruction of a solder joint frequently can lead to the mistake of whole encapsulating structure
Effect, the reliability of solder joint plays the service life of whole device the effect of key, therefore controls intermetallic compound increase to improve
The reliability of solder joint.Usually control intermetallic compound growth is degree and the pad nickel plating by controlling the heat exposure of solder joint
Method, but because solder joint is had to by thermal cycle caused by multiple reflux technique, the degree for increasing heat exposure, control can be caused
The method of solder joint heat exposure processed is not-so-practical, and the cost of pad nickel plating is higher and meeting butt welding point mechanical performance has an impact.
Therefore, defect caused by avoid above method the shortcomings that and blocked up intermetallic compound, the present inventor carry
The method of the coating on pad is gone out to reduce the method for intermetallic compound formation.
The content of the invention
The shortcomings that the invention aims to overcome the prior art, there is provided one kind is used to reduce tin bismuth solder joint intermetallic
The method that thing is formed.The thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joints can be obviously reduced in the present invention,
Endangered so as to reduce caused by the generation of blocked up intermetallic compound.
To reach above-mentioned purpose, the present invention adopts the following technical scheme that：
A kind of method for being used to reduce that intermetallic compound is formed between tin bismuth solder joint, includes the following steps：
(1) PCB substrate or substrate components are made；
(2) using metal surface plating process one is plated on the Cu pads of step (1) PCB substrate or substrate components
Layer thickness is the solder of 5-10um；
(3) with the reflux temperature of tin-bismuth solder on the coating of step (2) PCB substrate or the Cu pads of substrate components
Curve burn-on in refluxing unit a layer thickness be 10-200um solder；
(4) step (3) PCB substrate or substrate components are made into reflow soldering processing with another element, that is, obtained micro- mutual
Even welding spot structure.
Further, step (1) technological process for making PCB substrate or substrate components, including selection, exposure, development,
Etching and the demoulding.
Further, the material of the PCB substrate is DBC ceramic substrates, insulating metal substrate, glass cloth substrate or flexible base
Any one in plate.
Further, the material of the substrate components is any one in semiconductor chip, silicon, macromolecule or glass
Kind.
Further, step (2) the metal surface plating process is appointing in plating, chemical plating, thermal spray or hot-dip
Meaning is a kind of.
Further, step (2) described solder is Sn base solders.
Further, step (3) described solder is tin-bismuth solder.
Further, step (2) solder and step (3) described solder, when the solder is using Sn bases solder and described
It is when solder uses tin-bismuth solder, then 20 DEG C -100 higher than tin-bismuth solder welding temperature using the melting temperature of Sn base solder coating
℃。
Further, the setting of the tin-bismuth solder rework profile is determined by the melting temperature of tin-bismuth solder, its minimum reflux
Temperature is more than 138 DEG C of the melting temperature of tin bismuth solder.
The advantages of the present invention major embodiment is as follows：
1st, the present invention forms micro- interconnection welding spot structure in Cu pads addition Sn base solder coating after reflow treatment.With
The extension of aging time, the thickness of intermetallic compound become thicker.It is 0-10 days in aging time, SnBi/Cu interfaces
The intermetallic compound thickness of growth is roughly the same with the intermetallic compound thickness of SnBi/Sn bases solder/Cu interfaces growth.
After timeliness 20 days, the intermetallic compound thickness of SnBi/Sn bases solder/Cu interfaces growth is grown compared with SnBi/Cu interfaces
Intermetallic compound thickness reduce 33%-54%.After timeliness 30 days, the gold of SnBi/Sn bases solder/Cu interfaces growth
Compound thickness reduces 50%-70% compared with the intermetallic compound thickness that SnBi/Cu interfaces are grown between category, is indicated above adding
Sn bases solder can significantly suppress the growth of intermetallic compound.Because with the growth of IMC, IMC layers with solder interface
Stress constantly increases, and the failure of solder joint can be caused when stress increase reaches a certain amount of, so as to cause whole device
Failure.
2nd, the thickness of the intermetallic compound between tin-bismuth solder and Cu interconnected solder joints can be obviously reduced in the present invention, so that
Reduction endangers caused by the generation of blocked up intermetallic compound.
3rd, the present invention can significantly improve the reliability between micro- interconnection solder joint of tin-bismuth solder formation, so as to further improve whole
The service life of a electronic product.
Brief description of the drawings
Fig. 1 is the flow diagram for interconnecting solder joint for describing to be formed between tin bismuth solder and coating Cu pads.
Fig. 2 is the microscopical image of cross-sectional scanning electron (SEM) that 5um solders are plated on the Cu pads of 36um thickness.
Fig. 3 is that the Cu pads containing coating Sn0.7Cu solders are flowed back at 160 DEG C of peak temperature after 30s on description substrate,
Form Sn58Bi/Sn0.7Cu/Cu interface images.(a)-(d) is timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, 30 days
The image of the scanning electron microscope at Sn58Bi/Sn0.7Cu/Cu interfaces.
Fig. 4 is to describe to flow back at 160 DEG C of peak temperature 30s for the Cu pads of Sn1.2Cu solders containing coating on substrate
Afterwards, Sn58Bi/Sn1.2Cu/Cu interface images are formed.(a)-(d) is timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, 30 days
The image of the scanning electron microscope at Sn58Bi/Sn1.2Cu/Cu interfaces.
Fig. 5 be describe on substrate containing coating for Sn3.0Ag0.5Cu solders Cu pads in 160 DEG C of peak temperature next time
After flowing 30s, Sn58Bi/Sn3.0Ag0.5Cu/Cu interface images are formed.(a)-(d) is timeliness 0 day at 120 DEG C respectively, 10
My god, 20 days, the image of the scanning electron microscope at 30 days Sn58Bi/Sn3.0Ag0.5Cu/Cu interfaces.
Fig. 6 be describe on substrate containing coating for Sn4.0Ag0.5Cu solders Cu pads in 160 DEG C of peak temperature next time
After flowing 30s, Sn58Bi/Sn4.0Ag0.5Cu/Cu interface images are formed.(a)-(d) is timeliness 0 day at 120 DEG C respectively, 10
My god, 20 days, the image of the scanning electron microscope at 30 days Sn58Bi/Sn4.0Ag0.5Cu/Cu interfaces.
Fig. 7 is that description Sn58Bi solders at 160 DEG C of peak temperature flow backs on Cu pads after 30s, formation Sn58Bi/Cu
Interface image, (a)-(d) are timeliness 0 day at 120 DEG C respectively, 10 days, 20 days, the scanning electron at 30 days Sn58Bi/Cu interfaces
Microscopical image.
Fig. 8 is the graph of a relation that different interfaces forms IMC thickness and aging time.
Main element symbol description in figure：10-PCB substrates, 11-Cu pads, 12-Sn base solders, 13- intermetallics
Thing, 14- tin-bismuth solders, 15- substrate components.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is described in further detail.It should be appreciated that specific embodiment described herein is used only for explaining the present invention,
It is not intended to limit the present invention.
As shown in Figure 1, the flow signal of the interconnection solder joint formed between tin bismuth solder in the present invention and coating Cu pads
Figure, wherein shown in figure (a), makes a PCB substrate 10, goes into battle in PCB substrate 10 and list 4*4 first, a diameter of 0.6mm, thickness
The Cu pads 11 of 36um.Sn bases solder 12 is plated on the Cu pads 11 of PCB substrate by figure (b) using or immersion, forms one
Layer thickness about 5um coating, its coating material are Sn-Cu solders or Sn-Ag-Cu solders etc..Scheme (c) in the PCB substrate 10 with
160 DEG C of peak temperature, the counterflow condition of return time 30s are burn-on the tin bismuth eutectic solder 14 of 100um thickness.Then using plating
Technique goes into battle in substrate components 15 and lists 4*4, a diameter of 0.6mm, the Cu pads 11 of thickness 36um, by or immersion by Sn
Base solder 12 is plated on the Cu pads 11 of substrate, forms a layer thickness about 5um coating.Scheme (d) by above-mentioned PCB substrate 10 with it is above-mentioned
Substrate components 15 make subsequently interconnection under 160 DEG C of peak temperature, the counterflow condition of return time 30s, that is, obtain micro- interconnection solder joint
Structure.Different interconnection solder joints will be formed to be placed at 120 DEG C of aging temp, carry out different aging times respectively, be respectively 0
My god, 10 days, 20 days, 30 days.It can find to grow the intermetallic compound 13 of different-thickness by different aging times.
Embodiment 1
The raw material of glass cloth substrate, Si chips, Sn0.7Cu solders as experiment are selected, first, on glass cloth substrate
Array goes out 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um.Sn0.7Cu solders are plated in by glass cloth by or immersion
On the Cu pads of substrate, the immersion plating time is 10s, forms the coating of about 5um, obtains the sample of scanning electron microscope image as shown in Figure 2.
Then, in the PCB substrate with 160 DEG C of peak temperature, the burn-on tin bismuth of 100um thickness of the counterflow condition of return time 30s is total to
Brilliant solder.
Then gone into battle with electroplating technology in Si chips and list 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um, pass through heat
Sn0.7Cu solders are plated on the Cu pads of Si chips by immersion plating technology, and the immersion plating time is 10s, form the coating of about 5um, are obtained
The sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on corresponding Cu pads, in peak temperature
160 DEG C, the micro- interconnection welding spot structure of PCB substrate/Sn58Bi/Si chips is formed under return time 30s counterflow conditions.
Finally, in order to be scanned electron microscope observation to the interface under different timeliness, by the last sample of formation
It is put into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, sample taking-up is gone with acetone respectively
Except oil stain.With 1000#, 2000#, 2400#, 4000# sand paper will interconnect solder joint water mill, by SiO2After polishing fluid polishing, use
FeCl3Corrode corrosion, finally show the intermetallic compound generated between solder joint, seen after the metal spraying of surface with scanning electron microscope
Examine.As shown in Figure 8, the intermetallic compound that thickness differs is respectively formed after Reflow Soldering, as shown in Figure 7, the Sn58Bi/Cu of nonageing
Intermetallic compound thickness is about 0.38um.
As shown in figure 3, be about 0.7508um for the Sn58Bi/Sn0.7Cu/Cu intermetallic compound thickness of nonageing, warp
Cross timeliness 30 days at 120 DEG C, Sn58Bi/Sn0.7Cu/Cu intermetallic compound thickness length to 3.298um, as shown in fig. 7, through
Crossing the timeliness at 120 DEG C, after 30 days, Sn58Bi/Cu intermetallic compound thickness has been grown to about 6.59um.Thus prove, add plating
Layer Sn0.7Cu can significantly reduce the thickness of compound between interface metal.
Embodiment 2
The raw material of glass cloth substrate, Si chips, Sn1.2Cu solders as experiment are selected, first, on glass cloth substrate
Array goes out 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um.Sn1.2Cu solders are plated in by glass cloth by or immersion
On the Cu pads of substrate, the immersion plating time is 10s, forms the coating of about 5um, obtains the sample of scanning electron microscope image as shown in Figure 2.
Then, in the PCB substrate with 160 DEG C of peak temperature, the burn-on tin bismuth of 100um thickness of the counterflow condition of return time 30s is total to
Brilliant solder.
Then gone into battle with electroplating technology in Si chips and list 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um, pass through heat
Sn1.2Cu solders are plated on the copper pad of Si chips by immersion plating technology, and the immersion plating time is 10s, form the coating of about 5um, are obtained
The sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on corresponding Cu pads, in peak temperature
160 DEG C, the micro- interconnection welding spot structure of PCB substrate/Sn58Bi/Si chips is formed under return time 30s counterflow conditions.
Finally, in order to be scanned electron microscope observation to the interface under different timeliness, by the last sample of formation
It is put into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, sample taking-up is gone with acetone respectively
Except oil stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, by SiO2After polishing fluid polishing, FeCl is used3It is rotten
Corrosion is lost, the intermetallic compound of generation is finally shown, scanning electron microscopic observation is used after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound that thickness differs is respectively formed after fluid welding, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing
About 0.38um.
As shown in figure 4, be about 0.6366um for the Sn58Bi/Sn1.2Cu/Cu intermetallic compound thickness of nonageing, warp
Cross timeliness 30 days at 120 DEG C, Sn58Bi/Sn1.2Cu/Cu intermetallic compound thickness length to 2.889um, as shown in fig. 7, through
Crossing the timeliness at 120 DEG C, after 30 days, Sn58Bi/Cu intermetallic compound thickness has been grown to about 6.59um.Thus prove, add plating
Layer Sn1.2Cu can significantly reduce the thickness of compound between interface metal.
Embodiment 3
The raw material of glass cloth substrate, Si chips, Sn3.0Ag0.5Cu solders as experiment are selected, first, in glass cloth
Substrate, which is gone into battle, lists 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um.By or immersion by Sn3.0Ag0.5Cu solders
It is plated on the Cu pads of glass cloth substrate, the immersion plating time is 10s, forms the coating of about 5um, obtains scanning electron microscope as shown in Figure 2
The sample of image.Then, in the PCB substrate with 160 DEG C of peak temperature, the counterflow condition of return time 30s is burn-on 100um thickness
The tin bismuth eutectic solder of degree.
Then gone into battle with electroplating technology in Si chips and list 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um, pass through heat
Sn3.0Ag0.5Cu solders are plated on the copper pad of Si chips by immersion plating technology, and the immersion plating time is 10s, form the coating of about 5um,
Obtain the sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is tipped upside down on corresponding Cu pads, in peak value
160 DEG C of temperature, forms the micro- interconnection welding spot structure of PCB substrate/Sn58Bi/Si chips under return time 30s counterflow conditions.
Finally, in order to be scanned electron microscope observation to the interface under different timeliness, by the last sample of formation
It is put into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, sample taking-up is gone with acetone respectively
Except oil stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, by SiO2After polishing fluid polishing, FeCl is used3It is rotten
Corrosion is lost, the intermetallic compound of generation is finally shown, scanning electron microscopic observation is used after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound that thickness differs is respectively formed after fluid welding, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing
About 0.38um.
As shown in figure 5, it is about for the Sn58Bi/Sn3.0Ag0.5Cu/Cu intermetallic compound thickness of nonageing
0.9209um, by timeliness 30 days at 120 DEG C, Sn58Bi/Sn3.0Ag0.5Cu/Cu intermetallic compound thickness grow to
2.073um, as shown in fig. 7, after the timeliness 30 days at 120 DEG C, Sn58Bi/Cu intermetallic compound thickness is grown to about
6.59um.Thus prove, the thickness of compound between interface metal can be significantly reduced by adding coating Sn3.0Ag0.5Cu.
Embodiment 4
The raw material of glass cloth substrate, Si chips, Sn4.0Ag0.5Cu solders as experiment are selected, first, in glass cloth
Substrate, which is gone into battle, lists 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um.By or immersion by Sn4.0Ag0.5Cu solders
It is plated on the Cu pads of glass cloth substrate, the immersion plating time is 10s, forms the coating of about 5um, obtains scanning electron microscope as shown in Figure 2
The sample of image.Then, in the PCB substrate with 160 DEG C of peak temperature, the counterflow condition of return time 30s is burn-on 100um thickness
The tin bismuth eutectic solder of degree.
Then gone into battle with electroplating technology in Si chips and list 4*4, the Cu pads of a diameter of 0.6mm, thickness 36um, pass through heat
Sn4.0Ag0.5Cu solders are plated on the copper pad of Si chips by immersion plating technology, and the immersion plating time is 10s,
The coating of about 5um is formed, obtains the sample of scanning electron microscope image as shown in Figure 2.Above-mentioned glass cloth substrate is fallen
It is buckled on corresponding Cu pads, in 160 DEG C of peak temperature, return time 30s counterflow conditions form PCB substrate/Sn58Bi/Si cores
The micro- interconnection welding spot structure of piece.
Finally, in order to be scanned electron microscope observation to the interface under different timeliness, by the last sample of formation
It is put into thermostatic oil bath, aging temp is 120 DEG C, and timeliness 0 day, 10 days, 20 days, 30 days, sample taking-up is gone with acetone respectively
Except oil stain.With 1000#, 2000#, 2400#, 4000# sand paper is by solder joint water mill, by SiO2After polishing fluid polishing, FeCl is used3It is rotten
Corrosion is lost, the intermetallic compound of generation is finally shown, scanning electron microscopic observation is used after the metal spraying of surface.As shown in Figure 8, return
The intermetallic compound that thickness differs is respectively formed after fluid welding, as shown in Figure 7 the Sn58Bi/Cu intermetallic compound thickness of nonageing
About 0.38um.
As shown in fig. 6, it is about for the Sn58Bi/Sn4.0Ag0.5Cu/Cu intermetallic compound thickness of nonageing
0.7926um, by timeliness 30 days at 120 DEG C, Sn58Bi/Sn4.0Ag0.5Cu/Cu intermetallic compound thickness grow to
2.004um, as shown in fig. 7, after the timeliness 30 days at 120 DEG C, Sn58Bi/Cu intermetallic compound thickness is grown to about
6.59um.Thus prove, the thickness of compound between interface metal can be significantly reduced by adding coating Sn4.0Ag0.5Cu.
Instantiation more than is provable, and specific method according to the present invention can significantly reduce tin bismuth solder joint gold
Compound is formed between category.
The foregoing is intended to be a preferred embodiment of the present invention.Certainly, the present invention can also have other a variety of implementations
Example, in the case of without departing substantially from spirit of the invention and its essence, any one skilled in the art, when can be according to this
Various corresponding equivalent changes and deformation are made in invention, should all belong to the protection domain of appended claims of the invention.
Claims (6)
- A kind of 1. method for being used to reduce the formation of tin bismuth solder joint intermetallic compound, it is characterised in that include the following steps：(1) PCB substrate or substrate components are made；(2) thickness is plated on the Cu pads of step (1) PCB substrate or substrate components using metal surface plating process Spend the Sn base solders for 5-10um；(3) with the reflux temperature curve of tin-bismuth solder on the coating of step (2) PCB substrate or the Cu pads of substrate components A layer thickness of burn-oning in refluxing unit is the tin-bismuth solder of 10-200um；(4) step (3) PCB substrate or substrate components are made into reflow soldering processing with another element, that is, obtains micro- interconnection weldering Point structure.
- 2. the method according to claim 1 for reducing tin bismuth solder joint intermetallic compound and being formed, it is characterised in that：It is described The material of PCB substrate is any one in DBC ceramic substrates, insulating metal substrate, glass cloth substrate or flexible base board.
- 3. the method according to claim 1 for reducing tin bismuth solder joint intermetallic compound and being formed, it is characterised in that：The lining The material of bottom element is any one in semiconductor chip, macromolecule or glass.
- 4. the method according to claim 1 for reducing tin bismuth solder joint intermetallic compound and being formed, it is characterised in that：Step (2) the metal surface plating process is any one in plating, chemical plating, thermal spray or hot-dip.
- 5. the method according to claim 1 for reducing tin bismuth solder joint intermetallic compound and being formed, it is characterised in that step (2) solder and step (3) described solder, when the solder uses tin-bismuth solder using Sn bases solder and the solder, It is then 20 DEG C -100 DEG C higher than tin-bismuth solder welding temperature using the melting temperature of Sn base solder coating.
- 6. the method according to claim 1 for reducing tin bismuth solder joint intermetallic compound and being formed, it is characterised in that：The tin The setting of bismuth solder rework profile is determined that its minimum reflux temperature is more than the fusing point of tin bismuth solder by the melting temperature of tin-bismuth solder 138 DEG C of temperature.
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| CN110666267B (en) * | 2019-10-11 | 2021-09-24 | 江苏科技大学 | Tin soldering point alloying forming method |
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