CN106103651A - 掺杂铕或钐的钼酸铽 - Google Patents
掺杂铕或钐的钼酸铽 Download PDFInfo
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- CN106103651A CN106103651A CN201580014071.XA CN201580014071A CN106103651A CN 106103651 A CN106103651 A CN 106103651A CN 201580014071 A CN201580014071 A CN 201580014071A CN 106103651 A CN106103651 A CN 106103651A
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- 229910052771 Terbium Inorganic materials 0.000 title claims abstract description 21
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 229910052693 Europium Inorganic materials 0.000 title claims abstract description 17
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052772 Samarium Inorganic materials 0.000 title claims abstract description 10
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 title claims abstract description 10
- VLAPMBHFAWRUQP-UHFFFAOYSA-L molybdic acid Chemical compound O[Mo](O)(=O)=O VLAPMBHFAWRUQP-UHFFFAOYSA-L 0.000 title abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 55
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000004020 luminiscence type Methods 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910001440 Mn2+ Inorganic materials 0.000 description 78
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- -1 alkaline-earth metal Salt Chemical class 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910000391 tricalcium phosphate Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 229910017623 MgSi2 Inorganic materials 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 7
- 229910052712 strontium Inorganic materials 0.000 description 7
- 229910052925 anhydrite Inorganic materials 0.000 description 6
- 238000001354 calcination Methods 0.000 description 6
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 6
- 229910001634 calcium fluoride Inorganic materials 0.000 description 6
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000004570 mortar (masonry) Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052882 wollastonite Inorganic materials 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 5
- 229910052909 inorganic silicate Inorganic materials 0.000 description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 229910052950 sphalerite Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052844 willemite Inorganic materials 0.000 description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 5
- 229910000164 yttrium(III) phosphate Inorganic materials 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 229910003677 Sr5(PO4)3F Inorganic materials 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Inorganic materials [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- 229910052923 celestite Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 229910000393 dicalcium diphosphate Inorganic materials 0.000 description 4
- 229910001650 dmitryivanovite Inorganic materials 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 229910001707 krotite Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910004829 CaWO4 Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910004369 ThO2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- JUNWLZAGQLJVLR-UHFFFAOYSA-J calcium diphosphate Chemical compound [Ca+2].[Ca+2].[O-]P([O-])(=O)OP([O-])([O-])=O JUNWLZAGQLJVLR-UHFFFAOYSA-J 0.000 description 3
- 229910052589 chlorapatite Inorganic materials 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 3
- 238000006862 quantum yield reaction Methods 0.000 description 3
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- 229910004647 CaMoO4 Inorganic materials 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910002244 LaAlO3 Inorganic materials 0.000 description 2
- 229910002420 LaOCl Inorganic materials 0.000 description 2
- 229910001477 LaPO4 Inorganic materials 0.000 description 2
- 229910018247 LaSiO3 Inorganic materials 0.000 description 2
- 229910010215 LiAl5O8 Inorganic materials 0.000 description 2
- 229910010092 LiAlO2 Inorganic materials 0.000 description 2
- 229910010881 LiInO2 Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 239000005084 Strontium aluminate Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910016064 BaSi2 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001551 Ca2B5O9Cl Inorganic materials 0.000 description 1
- 229910014779 CaAl4 Inorganic materials 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229910005833 GeO4 Inorganic materials 0.000 description 1
- 229910005835 GeO6 Inorganic materials 0.000 description 1
- 229910020440 K2SiF6 Inorganic materials 0.000 description 1
- 229910002226 La2O2 Inorganic materials 0.000 description 1
- 229910002248 LaBO3 Inorganic materials 0.000 description 1
- 229910002249 LaCl3 Inorganic materials 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
- 229910010227 LiAlF4 Inorganic materials 0.000 description 1
- 229910010924 LiLaO2 Inorganic materials 0.000 description 1
- 229910003016 Lu2SiO5 Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- 229910020073 MgB2 Inorganic materials 0.000 description 1
- 229910017848 MgGa2O4 Inorganic materials 0.000 description 1
- 229910017672 MgWO4 Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 229910003669 SrAl2O4 Inorganic materials 0.000 description 1
- 229910002412 SrMoO4 Inorganic materials 0.000 description 1
- 229910003080 TiO4 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SZZXSKFKZJTWOY-UHFFFAOYSA-N azanylidynesamarium Chemical compound [Sm]#N SZZXSKFKZJTWOY-UHFFFAOYSA-N 0.000 description 1
- DOHQPUDBULHKAI-UHFFFAOYSA-N azanylidyneterbium Chemical compound [Tb]#N DOHQPUDBULHKAI-UHFFFAOYSA-N 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QZVSYHUREAVHQG-UHFFFAOYSA-N diberyllium;silicate Chemical compound [Be+2].[Be+2].[O-][Si]([O-])([O-])[O-] QZVSYHUREAVHQG-UHFFFAOYSA-N 0.000 description 1
- 229910052637 diopside Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 229910052634 enstatite Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 229910052587 fluorapatite Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910001676 gahnite Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052842 phenakite Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003317 samarium compounds Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001774 tsavorite Inorganic materials 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910009112 xH2O Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
- C09K11/7794—Vanadates; Chromates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7776—Vanadates; Chromates; Molybdates; Tungstates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Liquid Crystal (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
本发明涉及掺杂铕或钐的钼酸铽,涉及所述化合物的制备方法,以及涉及根据本发明的掺杂铕‑或钐‑的钼酸铽作为转换磷光体的用途。本发明还涉及光发射设备,其包含根据本发明的掺杂铕‑或钐‑的钼酸铽。
Description
本发明涉及掺杂铕-或钐-的钼酸铽,涉及制备所述化合物的方法,以及涉及根据本发明的掺杂铕-或钐-的钼酸铽作为转换磷光体(conversion phosphor)的用途。本发明还涉及光发射设备,其包含根据本发明的掺杂铕-或钐-的钼酸铽。
对于磷光体-转换LEDs(简称pc-LEDs),可在蓝光区和/或UV光区激发的无机荧光粉作为转换磷光体是很重要的。同时,许多转换磷光体系统是已知的,例如碱土金属正硅酸盐、硫代镓酸盐、石榴石、氮化物和氮氧化物,其各自都掺杂Ce3+或Eu2+。除了发射黄光或绿光的石榴石或正硅酸盐,基于蓝光或UV-A-发射的(In,Ga)N LEDs的具有<4000K色温的暖-白光源的实现需要具有600nm以上发射波长的红色-发射磷光体,其在初级辐射的相应波长(370-480nm)足够强地发射。同时,这些磷光体的稳定性必须与石榴石或正硅酸盐的稳定性一样高,以便在固态光源寿命期内,不会发生不期望的色点位移。
为此,在最近20年,已提出或研发符合所述要求的许多磷光体。迄今使用的磷光体即(Ca,Sr)S:Eu、(Ca,Sr)AlSiN3:Eu和(Ca,Sr,Ba)2Si5N8:Eu都是基于活化剂Eu2+,其优势在于宽吸收谱,以及宽发射带。所述Eu2+-活化材料的主要缺点是其对于光降解的相对高的敏感性,因为二价Eu2+趋向于光离子化,特别是在具有相对小带隙的宿主材料中。
其他缺点是Eu2+发射带的相当高的半值宽度,如果色点是在艳红色光谱区,其根据中等流明当量(<200lm/W)是明显的。该观察特别适用于磷光体(Ca,Sr)S:Eu和(Ca,Sr)AlSiN3:Eu。
因此,需要的是研发不具有所述缺点的发射红光的磷光体。因此,本发明的目的之一是提供这种类型的磷光体。
令人吃惊地,本发明人已发现掺杂铕-或钐-的钼酸铽满足上述要求。
就此,CN 103275713A公开下述通式的化合物:
RIII 2(1-x)Eu2xMo4O15
其中,RIII选自元素La3+、Ce3+、Pr3+、Nd3+、Sm3+、Gd3+、Tb3+、Dy3+、Ho3+、Er3+、Tm3+、Yb3+、Lu3+、Sc3+和Y3+,且0.0001≤x<1.0。然而,此处未公开根据本发明的钼酸铽。此外,如本领域技术人员所知的,在上式化合物的制备中,随着Tb3+,另外形成Tb4+,这严重损害相应化合物的磷光体性质,因为在所述化合物中,相应的Tb4+部分引起宽的吸收带,其不利地延伸至红光区。
因此,本发明涉及式I化合物,
(Tb2)x(Mo1-bWb)yO3x+3y:Ln I
其中
Ln指Sm3+或Eu3+;
x指1、2或3;1≤y≤8;且0≤b<1。
y优选相应于1-8的整数倍数。
根据本发明的化合物通常可在蓝光区优选在大约370-480nm激发,并通常在红光区在大约615或660nm具有红线发射。
在本申请的上下文中,蓝光指最大发射在400~459nm的光,青光(cyan light)指最大发射在460~505nm的光,绿光指最大发射在506~545nm的光,黄光指最大发射在546~565nm的光,橙光指最大发射在566~600nm的光,并且红光指最大发射在601~700nm的光。根据本发明的化合物优选是发射红光的转换磷光体。
此外,根据本发明的化合物的杰出之处在于大于80%、优选大于90%、特别优选大于95%的高光致发光量子产率。
光致发光量子产率(还称作量子产率或量子效率)描述化合物的发射光子数和吸收光子数之间的比率。
此外,根据本发明的磷光体具有高的流明当量值(≥250lm/W),并杰出之处还在于高的化学和光化学稳定性。
在一优选实施方案中,式I化合物选自式Ia,
(Tb2-aLna)x(Mo1-bWb)yO3x+3y Ia
其中
Ln和b具有式I所示含义之一,
x=1;
1≤y≤3;且
0.1≤a≤1。
根据本发明的化合物特别因在395nm、465nm和487nm的吸收强度而杰出,所述强度对于掺杂Ln的磷光体是比较高的。最后所述的吸收带是由于三价Tb3+(7F6-5D4)的存在,通过在0.2≤a≤1浓度下,有效的能量转移至Ln,实际上可将“绿色”Tb3+发光完全淬灭。
在本发明的一优选实施方案中,Ln等于Eu3+。因此,将优选式I或Ia化合物,其中0.1<a≤1,特别优选其中0.2≤a≤1,特别是其中0.4<a≤1。
在另一优选的实施方案中,根据本发明的式I和Ia化合物中的Ln等于Sm3+,优选其中0.1≤a≤1,特别优选其中0.2<a≤1,此外0.4≤a≤1。
根据本发明,如果需要,通过掺杂较少的Ln,其中Ln等于Eu3+或Sm3+的式I和Ia化合物的最大发射还可以位移至黄光区,此处特别优选其中0<a<0.1、优选0<a≤0.05、特别优选0<a≤0.01的化合物。
在另一实施方案中,六价钨(b>0)可部分替换式I和Ia化合物中的六价钼。此外,优选赋予下述化合物,其中0≤b<0.8,特别优选其中0≤b<0.5,特别是其中0≤b<0.3。然而,尤其优选其中b等于0的式I和Ia化合物。
特别优选式I和Ia化合物,其中x等于1,且y同时等于3;式I和Ia化合物,其中x等于2,且y同时等于7;以及式I和Ia化合物,其中x等于3,且y同时等于8。
具体地讲,根据本发明的下述子式(Tb1-aEua)2Mo3O12的化合物因无间隙的混晶系列(gap-free mixed-crystal series)的存在而杰出。
混晶指由至少两种不同化学元素组成的晶体,其中相应的原子或离子随机分布。
根据本发明的化合物特别优选选自下述子式:
Tb1.6Eu0.4Mo3O12、Tb1.4Eu0.6Mo3O12、Tb1.2Eu0.8Mo3O12、Tb1.0Eu1.0Mo3O12以及Tb1.8Sm0.2Mo3O12、Tb1.6Sm0.4Mo3O12、Tb1.4Sm0.6Mo3O12、Tb1.2Sm0.8Mo3O12和Tb1.0Sm1.0Mo3O12。
此处,式I和Ia化合物优选是相纯(phase-pure)形式的。
利用X-射线衍射图可观察晶体粉末的相纯度,即样品是否仅由一种晶状化合物(相纯的)或多种化合物(多相)组成。在相纯粉末中,可观察到所有反射,并归属至化合物。
本发明还涉及根据本发明的化合物的制备方法,其特征在于,在步骤a)中,将选自氮化物和氧化物或相应的反应性形式的适当原料混合,以及,在步骤b)中,将混合物热处理。
优选地,所述方法的特征在于下述方法步骤:
(a)混合物的制备,该混合物含有铕或钐源、钼源和铽源,以及还任选地含有钨源;
(b)在氧化条件下,煅烧所述混合物。
步骤(a)中所用的铕或钐源可以是用其可制备掺杂铕或钐的钼酸铽的任何可能的铕或钐化合物。所用的铕或钐源优选是所述元素的氧化物或氮化物,特别是氧化铕(特别是Eu2O3)和/或氮化铕(EuN),以及还特别是氧化钐(特别是Sm2O3)和/或氮化钐(SmN),特别是Eu2O3或Sm2O3。
步骤(a)中所用的铽源可以是用其可制备掺杂铕的钼酸铽的任何可能的铽化合物。本发明的方法中所用的铽源优选是氮化铽和/或氧化铽。
步骤(a)中所用的钼和/或钨源可以是用其可制备根据本发明的钼酸铽的任何可能的钼和/或钨化合物。根据本发明的方法中所用的钼和/或钨源优选是相应的氮化物和/或氧化物。
所述化合物优选以这样的比例使用,其使得相应元素Ln、钼和/或钨,以及铽的原子数基本相应于上述式的产物的所需比率。特别是,此处使用化学计量比。
优选地,将步骤(a)中的原料化合物以粉末形式使用,并例如利用研钵互相一起处理,以得到均质混合物。为此,可优选将原料化合物悬浮于本领域技术人员已知的惰性有机溶剂例如丙酮中。在所述情况下,煅烧前,将该混合物干燥。
在氧化条件下,完成步骤(b)中的煅烧。采用氧化条件,意指任何可能的氧化气氛例如空气或其他含有氧气的气氛。
优选地,在700℃~1200℃、特别优选800℃~1000℃,尤其850℃~950℃的温度下,完成煅烧。此处,煅烧持续时间优选是2~14h,更优选是4~12h,并特别是6~10h。
优选地,通过将得到的混合物引入到高温炉中,例如在氮化硼容器中,完成煅烧。高温炉是例如包含钼箔槽的管式加热炉。
煅烧后,将得到的化合物任选地均质化,其中可在适当溶剂例如异丙醇中湿法完成相应的研磨处理或者经干法完成将相应的研磨处理。
在另一实施方案中,可将根据本发明的化合物进行包衣。适合于所述目的的是根据现有技术本领域技术人员已知,且适合于磷光体的所有包衣方法。用于包衣的适当材料特别是金属氧化物和金属氮化物,特别是碱土金属氧化物例如Al2O3和碱土金属氮化物例如AlN,以及SiO2。此处,可例如通过流化床方法,完成包衣。此外,适当的包衣方法根据JP 04-304290、WO 91/10715、WO 99/27033、US 2007/0298250、WO 2009/065480和WO 2010/075908是已知的。还可能的是将有机包衣用作替代和/或除了上述的无机包衣外还应用有机包衣。包衣可对化合物的稳定性和分散性具有有利作用。
此外,本发明涉及根据本发明的化合物作为磷光体特别是转换磷光体的用途。
从本申请的意义来说,术语“转换磷光体”意指在电磁波谱的某一波长区域优选在蓝色或UV光谱区吸收辐射,并且在电磁波谱的另一波长区域优选在红色或橙色光谱区特别是在红色光谱区发射可见光的材料。就此,还应理解术语“辐射诱导的发射效率”,即转换磷光体吸收某一波长区域的辐射,并且在另一波长区域用一定效率发射辐射。术语“发射波长位移”意指转换磷光体在不同波长发射光,即与另一转换磷光体或相似转换磷光体相比,位移至更短或更长的波长。最大发射因此被位移。
本发明还涉及发射转换材料,其含有根据本发明的上述式之一的一种或多种化合物。发射转换材料可由根据本发明的一种化合物构成,并在该情况下,其将相当于上文定义的术语“转换磷光体”。
对于根据本发明的发射转换材料,除本发明化合物之外,还可能包含另外的转换磷光体。在该情况下,根据本发明的发射转化材料包含至少两种转换磷光体的混合物,其中所述化合物之一是根据本发明的化合物。对于所述至少两种转换磷光体,特别优选的是发射相互互补的不同波长的光的磷光体。因为根据本发明的化合物是发射红光的磷光体,所以优选将其与发射绿光或发射黄光的磷光体组合使用,或者还与发射青光或蓝光的磷光体组合使用。或者,还可将根据本发明的发射红光的转换磷光体与(a)发射蓝光和发射绿光的转换磷光体组合使用。或者,还可将根据本发明的发射红光的转换磷光体与(a)发射绿光的转换磷光体组合使用。因此,对于根据本发明的转换磷光体,可能优选的是将其与一种或多种其他的转换磷光体联合用于根据本发明的发射转换材料中,其然后一起优选发射白光。
一般来讲,可将任何可能的转换磷光体用作可与根据本发明的化合物一起使用的另外的转换磷光体。此处,例如,下述是适当的:
Ba2SiO4:Eu2+,BaSi2O5:Pb2+,BaxSr1-xF2:Eu2+,BaSrMgSi2O7:Eu2+,BaTiP2O7,(Ba,Ti)2P2O7:Ti,Ba3WO6:U,BaY2Fs:Er3+,Yb+,Be2SiO4:Mn2+,Bi4Ge3O12,CaAl2O4:Ce3+,CaLa4O7:Ce3+,CaAl2O4:Eu2+,CaAl2O4:Mn2+,CaAl4O7:Pb2+,Mn2+,CaAl2O4:Tb3+,Ca3Al2Si3O12:Ce3+,Ca3Al2Si3Oi2:Ce3+,Ca3Al2Si3O2:Eu2+,Ca2B5O9Br:Eu2+,Ca2B5OgCl:Eu2+,Ca2B5O9Cl:Pb2+,CaB2O4:Mn2+,Ca2B2O5:Mn2+,CaB2O4:Pb2+,CaB2P2O9:Eu2+,Ca5B2SiO10:Eu3+,Ca0.5Ba0.5Al12O19:Ce3+,Mn2+,Ca2Ba3(PO4)3Cl:Eu2+,CaBr2:Eu2+in SiO2,CaCl2:Eu2+in SiO2,CaCl2:Eu2+,Mn2+in SiO2,CaF2:Ce3+,CaF2:Ce3+,Mn2+,CaF2:Ce3+,Tb3+,CaF2:Eu2+,CaF2:Mn2+,CaF2:U,CaGa2O4:Mn2+,CaGa4O7:Mn2 +,CaGa2S4:Ce3+,CaGa2S4:Eu2+,CaGa2S4:Mn2+,CaGa2S4:Pb2+,CaGeO3:Mn2+,Cal2:Eu2+in SiO2,Cal2:Eu2+,Mn2+in SiO2,CaLaBO4:Eu3+,CaLaB3O7:Ce3+,Mn2+,Ca2La2BO6.5:Pb2+,Ca2MgSi2O7,Ca2MgSi2O7:Ce3+,CaMgSi2O6:Eu2+,Ca3MgSi2O8:Eu2+,Ca2MgSi2O7:Eu2+,CaMgSi2o6:Eu2+,Mn2+,Ca2MgSi2O7:Eu2+,Mn2+,CaMoO4,CaMoO4:Eu3+,CaO:Bi3+,CaO:Cd2+,CaO:Cu+,CaO:Eu3+,CaO:Eu3+,Na+,CaO:Mn2+,CaO:Pb2+,CaO:Sb3+,CaO:Sm3+,CaO:Tb3+,CaO:Tl,CaO:Zn2+,Ca2P2O7:Ce3+,α-Ca3(PO4)2:Ce3+,β-Ca3(PO4)2:Ce3+,Ca5(PO4)3Cl:Eu2+,Ca5(PO4)3Cl:Mn2+,Ca5(PO4)3Cl:Sb3+,Ca5(PO4)3Cl:Sn2+,β-Ca3(PO4)2:Eu2+,Mn2+,Ca5(PO4)3F:Mn2+,Cas(PO4)3F:Sb3+,Cas(PO4)3F:Sn2+,α-Ca3(PO4)2:Eu2+,β-Ca3(PO4)2:Eu2+,Ca2P2O7:Eu2+,Ca2P2O7:Eu2+,Mn2+,CaP2O6:Mn2+,α-Ca3(PO4)2:Pb2+,α-Ca3(PO4)2:Sn2+,β-Ca3(PO4)2:Sn2+,β-Ca2P2O7:Sn,Mn,α-Ca3(PO4)2:Tr,CaS:Bi3+,CaS:Bi3+,Na,CaS:Ce3+,CaS:Eu2+,CaS:Cu+,Na+,CaS:La3+,CaS:Mn2+,CaSO4:Bi,CaSO4:Ce3+,CaSO4:Ce3+,Mn2+,CaSO4:Eu2+,CaSO4:Eu2+,Mn2+,CaSO4:Pb2+,CaS:Pb2+,CaS:Pb2+,Cl,CaS:Pb2+,Mn2+,CaS:Pr3+,Pb2+,Cl,CaS:Sb3+,CaS:Sb3+,Na,CaS:Sm3+,CaS:Sn2+,CaS:Sn2+,F,CaS:Tb3+,CaS:Tb3 +,Cl,CaS:Y3+,CaS:Yb2+,CaS:Yb2+,Cl,CaSiO3:Ce3+,Ca3SiO4Cl2:Eu2+,Ca3SiO4Cl2:Pb2+,CaSiO3:Eu2+,CaSiO3:Mn2+,Pb,CaSiO3:Pb2+,CaSiO3:Pb2+,Mn2+,CaSiO3:Ti4+,CaSr2(PO4)2:Bi3 +,β-(Ca,Sr)3(PO4)2:Sn2+Mn2+,CaTi0.9Al0.1O3:Bi3+,CaTiO3:Eu3+,CaTiO3:Pr3+,Ca5(VO4)3Cl,CaWO4,CaWO4:Pb2+,CaWO4:W,Ca3WO6:U,CaYAlO4:Eu3+,CaYBO4:Bi3+,CaYBO4:Eu3+,CaYB0.8O3.7:Eu3+,CaY2ZrO6:Eu3+,(Ca,Zn,Mg)3(PO4)2:Sn,CeF3,(Ce,Mg)BaAl11O18:Ce,(Ce,Mg)SrAl11O18:Ce,CeMgAl11O19:Ce:Tb,Cd2B6O11:Mn2+,CdS:Ag+,Cr,CdS:In,CdS:In,CdS:In,Te,CdS:Te,CdWO4,CsF,Csl,Csl:Na+,Csl:Tl,(ErCl3)0.25(BaCl2)0.75,GaN:Zn,Gd3Ga5O12:Cr3+,Gd3Ga5O12:Cr,Ce,GdNbO4:Bi3+,Gd2O2S:Eu3+,Gd2O2Pr3+,Gd2O2S:Pr,Ce,F,Gd2O2S:Tb3+,Gd2SiO5:Ce3+,KAl11O17:Tl+,KGa11O17:Mn2+,K2La2Ti3O10:Eu,KMgF3:Eu2+,KMgF3:Mn2+,K2SiF6:Mn4+,LaAl3B4O12:Eu3+,LaAlB2O6:Eu3+,LaAlO3:Eu3+,LaAlO3:Sm3+,LaAsO4:Eu3+,LaBr3:Ce3+,LaBO3:Eu3+,(La,Ce,Tb)PO4:Ce:Tb,LaCl3:Ce3+,La2O3:Bi3+,LaOBr:Tb3+,LaOBr:Tm3+,LaOCl:Bi3+,LaOCl:Eu3+,LaOF:Eu3+,La2O3:Eu3+,La2O3:Pr3+,La2O2S:Tb3+,LaPO4:Ce3+,LaPO4:Eu3+,LaSiO3Cl:Ce3+,LaSiO3Cl:Ce3+,Tb3+,LaVO4:Eu3+,La2W3O12:Eu3+,LiAlF4:Mn2+,LiAl5O8:Fe3+,LiAlO2:Fe3+,LiAlO2:Mn2+,LiAl5O8:Mn2+,Li2CaP2O7:Ce3+,Mn2+,LiCeBa4Si4O14:Mn2+,LiCeSrBa3Si4O14:Mn2+,LiInO2:Eu3+,LiInO2:Sm3+,LiLaO2:Eu3+,LuAlO3:Ce3+,(Lu,Gd)2SiO5:Ce3+,Lu2SiO5:Ce3+,Lu2Si2O7:Ce3+,LuTaO4:Nb5+,Lu1-xYxAlO3:Ce3+,MgAl2O4:Mn2+,MgSrAl10O17:Ce,MgB2O4:Mn2+,MgBa2(PO4)2:Sn2+,MgBa2(PO4)2:U,MgBaP2O7:Eu2+,MgBaP2O7:Eu2+,Mn2+,MgBa3Si2O8:Eu2+,MgBa(SO4)2:Eu2+,Mg3Ca3(PO4)4:Eu2+,MgCaP2O7:Mn2+,Mg2Ca(SO4)3:Eu2+,Mg2Ca(SO4)3:Eu2+,Mn2,MgCeAlnO19:Tb3+,Mg4(F)GeO6:Mn2+,Mg4(F)(Ge,Sn)O6:Mn2+,MgF2:Mn2+,MgGa2O4:Mn2+,Mg8Ge2O11F2:Mn4+,MgS:Eu2+,MgSiO3:Mn2+,Mg2SiO4:Mn2+,Mg3SiO3F4:Ti4+,MgSO4:Eu2+,MgSO4:Pb2 +,MgSrBa2Si2O7:Eu2+,MgSrP2O7:Eu2+,MgSr5(PO4)4:Sn2+,MgSr3Si2O8:Eu2+,Mn2+,Mg2Sr(SO4)3:Eu2+,Mg2TiO4:Mn4+,MgWO4,M9YBO4:Eu3+,Na3Ce(PO4)2:Tb3+,Nal:Tl,Na1.23K0.42Eu0.12TiSi4O11:Eu3+,Na1.23K0.42Eu0.12TiSi5O13·xH2O:Eu3+,Na1.29K0.46Er0.08TiSi4O11:Eu3+,Na2Mg3Al2Si2O10:Tb,Na(Mg2-xMnx)LiSi4O10F2:Mn,NaYF4:Er3+,Yb3+,NaYO2:Eu3+,P46(70%)+P47(30%),SrAl12O19:Ce3+,Mn2+,SrAl2O4:Eu2+,SrAl4O7:Eu3+,SrAl12O19:Eu2+,SrAl2S4:Eu2+,Sr2B5O9Cl:Eu2 +,SrB4O7:Eu2+(F,Cl,Br),SrB4O7:Pb2+,SrB4O7:Pb2+,Mn2+,SrB8O13:Sm2+,SrxBayClzAl2O4-z/2:Mn2 +,Ce3+,SrBaSiO4:Eu2+,Sr(Cl,Br,I)2:Eu2+in SiO2,SrCl2:Eu2+in SiO2,Sr5Cl(PO4)3:Eu,SrwFxB4O6.5:Eu2+,SrwFxByOz:Eu2+,Sm2+,SrF2:Eu2+,SrGa12O19:Mn2+,SrGa2S4:Ce3+,SrGa2S4:Eu2+,SrGa2S4:Pb2+,SrIn2O4:Pr3+,Al3+,(Sr,Mg)3(PO4)2:Sn,SrMgSi2O6:Eu2+,Sr2MgSi2O7:Eu2+,Sr3MgSi2O8:Eu2+,SrMoO4:U,SrO·3B2O3:Eu2+,Cl,β-SrO·3B2O3:Pb2+,β-SrO·3B2O3:Pb2+,Mn2 +,α-SrO·3B2O3:Sm2+,Sr6P5BO20:Eu,Sr5(PO4)3Cl:Eu2+,Sr5(PO4)3Cl:Eu2+,Pr3+,Sr5(PO4)3Cl:Mn2+,Sr5(PO4)3Cl:Sb3+,Sr2P2O7:Eu2+,β-Sr3(PO4)2:Eu2+,Sr5(PO4)3F:Mn2+,Sr5(PO4)3F:Sb3+,Sr5(PO4)3F:Sb3+,Mn2+,Sr5(PO4)3F:Sn2+,Sr2P2O7:Sn2+,β-Sr3(PO4)2:Sn2+,β-Sr3(PO4)2:Sn2+,Mn2+(Al),SrS:Ce3+,SrS:Eu2+,SrS:Mn2+,SrS:Cu+,Na,SrSO4:Bi,SrSO4:Ce3+,SrSO4:Eu2+,SrSO4:Eu2+,Mn2+,Sr5Si4O10Cl6:Eu2+,Sr2SiO4:Eu2+,SrTiO3:Pr3+,SrTiO3:Pr3+,Al3+,Sr3WO6:U,SrY2O3:Eu3+,ThO2:Eu3+,ThO2:Pr3+,ThO2:Tb3+,YAl3B4O12:Bi3+,YAl3B4O12:Ce3+,YAl3B4O12:Ce3+,Mn,YAl3B4O12:Ce3+,Tb3+,YAl3B4O12:Eu3+,YAl3B4O12:Eu3+,Cr3+,YAl3B4O12:Th4+,Ce3+,Mn2+,YAlO3:Ce3+,Y3Al5O12:Ce3+,Y3Al5O12:Cr3+,YAlO3:Eu3+,Y3Al5O12:Eu3r,Y4Al2O9:Eu3+,Y3Al5O12:Mn4+,YAlO3:Sm3+,YAlO3:Tb3+,Y3Al5O12:Tb3+,YAsO4:Eu3+,YBO3:Ce3+,YBO3:Eu3+,YF3:Er3+,Yb3+,YF3:Mn2+,YF3:Mn2+,Th4+,YF3:Tm3+,Yb3+,(Y,Gd)BO3:Eu,(Y,Gd)BO3:Tb,(Y,Gd)2O3:Eu3+,Y1.34Gd0.60O3(Eu,Pr),Y2O3:Bi3+,YOBr:Eu3+,Y2O3:Ce,Y2O3:Er3+,Y2O3:Eu3+(YOE),Y2O3:Ce3+,Tb3 +,YOCl:Ce3+,YOCl:Eu3+,YOF:Eu3+,YOF:Tb3+,Y2O3:Ho3+,Y2O2S:Eu3+,Y2O2S:pr3+,Y2O2S:Tb3+,Y2O3:Tb3+,YPO4:Ce3+,YPO4:Ce3+,Tb3+,YPO4:Eu3+,YPO4:Mn2+,Th4+,YPO4:V5+,Y(P,V)O4:Eu,Y2SiO5:Ce3+,YTaO4,YTaO4:Nb5+,YVO4:Dy3+,YVO4:Eu3+,ZnAl2O4:Mn2+,ZnB2O4:Mn2+,ZnBa2S3:Mn2 +,(Zn,Be)2SiO4:Mn2+,Zn0.4Cd0.6S:Ag,Zn0.6Cd0.4S:Ag,(Zn,Cd)S:Ag,Cl,(Zn,Cd)S:Cu,ZnF2:Mn2+,ZnGa2O4,ZnGa2O4:Mn2+,ZnGa2S4:Mn2+,Zn2GeO4:Mn2+,(Zn,Mg)F2:Mn2+,ZnMg2(PO4)2:Mn2+,(Zn,Mg)3(PO4)2:Mn2+,ZnO:Al3+,Ga3+,ZnO:Bi3+,ZnO:Ga3+,ZnO:Ga,ZnO-CdO:Ga,ZnO:S,ZnO:Se,ZnO:Zn,ZnS:Ag+,Cl-,ZnS:Ag,Cu,Cl,ZnS:Ag,Ni,ZnS:Au,In,ZnS-CdS(25-75),ZnS-CdS(50-50),ZnS-CdS(75-25),ZnS-CdS:Ag,Br,Ni,ZnS-CdS:Ag+,Cl,ZnS-CdS:Cu,Br,ZnS-CdS:Cu,I,ZnS:Cl-,ZnS:Eu2+,ZnS:Cu,ZnS:Cu+,Al3+,ZnS:Cu+,Cl-,ZnS:Cu,Sn,ZnS:Eu2+,ZnS:Mn2 +,ZnS:Mn,Cu,ZnS:Mn2+,Te2+,ZnS:P,ZnS:P3-,Cl-,ZnS:Pb2+,ZnS:Pb2+,Cl-,ZnS:Pb,Cu,Zn3(PO4)2:Mn2+,Zn2SiO4:Mn2+,Zn2SiO4:Mn2+,As5+,Zn2SiO4:Mn,Sb2O2,Zn2SiO4:Mn2+,P,Zn2SiO4:Ti4+,ZnS:Sn2+,ZnS:Sn,Ag,ZnS:Sn2+,Li+,ZnS:Te,Mn,ZnS-ZnTe:Mn2+,ZnSe:Cu+,Cl或ZnWO4。
即使当以少量使用时,根据本发明的化合物产生良好的LED质量。此处,通过常规参数例如显色指数、相关色温、流明当量或绝对流明或者CIE x或CIE y坐标中的色点(colour point),描述LED质量。
显色指数或CRI是本领域技术人员熟知的无维的发光量(dimensionlesslighting quantity),其将人工光源颜色再现的忠实度与太阳光或灯丝光源的忠实度(后两者具有100的CRI)进行比较。
CCT或相关色温是本领域技术人员熟知的发光量,单位为开尔文。对于观察者,数值越高,来自人工辐射源的白光越冷。CCT遵守黑体辐射器的概念,在CIE图中,其色温描述所谓的Planck曲线。
流明当量是本领域技术人员熟知的发光量,单位为lm/W,其描述在具有单位瓦特的一定辐射测量的辐射功率下,光源的以流明计的光测的光通量的强度。流明当量越高,光源效率越高。
流明是本领域技术人员熟知的光测的发光量,其描述光源的光通量,其是辐射源发射的总可见辐射的量度。对于观察者,光通量越大,光源显得越亮。
CIE x和CIE y代表本领域技术人员熟知的标准CIE色图中的坐标(此处标准观测员1931),利用其描述光源的颜色。
利用本领域技术人员熟悉的方法,由光源的发射光谱计算上述的所有量。
就此,本发明还涉及根据本发明的化合物或者上述的根据本发明的发射转换材料在光源中的用途。
光源特别优选的是LED,特别是磷光体-转换的LED,简称pc-LED。此处,对于发射-转换材料,特别优选的是,除根据本发明的转换磷光体之外,其含有至少一种其他转换磷光体,特别是从而光源发射白光或具有某一色点的光(颜色需求原则)。“颜色需求原则”意指利用一种或多种转换磷光体,用pc-LED实现具有某一色点的光。
因此,本发明还涉及光源,其包含原发光源(primary light source)和发射转换材料。
还是此处,特别优选的是,对于发射转换材料,除根据本发明的转换磷光体之外,其包含至少一种其他转换磷光体,从而光源优选发射白光或具有某一色点的光。
根据本发明的光源优选是pc-LED。pc-LED通常包含原发光源和发射转换材料。为此,可将根据本发明的发射转换材料分散于树脂(例如环氧树脂或硅酮树脂)中或者得到适当的大小比率,直接置于原发光源上,或者替代地,根据应用,远离原发光源(后一排布还包括“远程磷光体技术”)。
原发光源可以是半导体芯片,发光光源例如ZnO,所谓的TCO(透明传导氧化物),基于ZnSe或SiC的布置(arrangement),基于有机发光层(OLED)或等离子体或放电源的布置,最优选的是半导体芯片。如果原发光源是半导体芯片,其优选是发光铟铝镓氮化物(InAlGaN),正如现有技术已知的。这种类型的原发光源的可能形式是本领域技术人员已知的。此外,作为光源,激光是合适的。
在光源中、特别是pc-LEDs中应用时,还可将根据本发明的发射-转换材料转变成任何需要的外形,例如球形颗粒、鳞片,以及结构化的材料和陶瓷(ceramics)。将所述形状总结于术语“成形体”下。因此,成形体是发射转换的成形体。
本发明还涉及发光单元,其含有至少一种根据本发明的光源。这种类型的发光单元主要用于显示设备中,特别是具有背光(backlighting)的液晶显示设备(LC显示屏)。因此,本发明还涉及这种类型的显示设备。
在根据本发明的发光单元中,发射转换材料和原发光源(特别是半导体芯片)间的光耦合优选借助光导布置发生。这样,可能将原发光源安装在中心位置,并且利用光导设备例如光纤维,将其与发射-转换材料光耦合。这样,可能的是获得适合于发光愿望的灯,该灯由一种或多种不同的转换磷光体组成,所述磷光体可被配置以形成光幕(light screen)和光波导(optical waveguide),其与原发光源耦合。为此,可能的是将强的原发光源置于有利于电气安装(electrical installation)的位置,并安装含有发射-转换材料的灯,其不需要进一步的电缆,仅通过将光波导置于任何需要的位置而与光波导耦合。
此处所述的本发明的所有变通方案可互相组合,只要各实施方案不互相排斥。特别是,基于本说明书的教导,作为常规优化的一部分,精确合并此处所述的各变通方案,以便得到具体的特别优选的实施方案是显而易见的操作。下述实施例旨在解释本发明,并特别显示所述的本发明变通方案的如此示例性组合的结果。然而,无论如何都不应将它们视为限制,相反地它们旨在鼓励概括。可在制备中使用的所有化合物或组分是已知的和市售的或者可通过已知方法合成。实施例中所示的温度都是℃。在说明书和实施例中,没有说明的情况下,加入到组合物中的组分的量总是加至最多总计100%。在所述给定情况中,应一直考虑百分数数据。
实施例
a)Tb1.998Eu0.002Mo3O12
在丙酮辅助下,将1.8684g(2.498mmol)Tb4O7、2.1591g(15.00mmol)MoO3和0.0018g(0.0050mmol)Eu2O3在玛瑙研钵中研磨。将粉末干燥,转移至瓷坩埚中,并在900℃在空气中加热两次,持续10h。
b)Tb1.8Eu0.2Mo3O12
在丙酮辅助下,将1.6832g(2.250mmol)Tb4O7、2.1591g(15.00mmol)MoO3和0.1760g(0.5000mmol)Eu2O3在玛瑙研钵中研磨。将粉末干燥,转移至瓷坩埚中,并在900℃在空气中加热两次,持续10h。
c)TbEuMo3O12
在丙酮辅助下,将0.9351g(1.250mmol)Tb4O7、2.1591g(15.00mmol)MoO3和0.8800g(2.500mmol)Eu2O3在玛瑙研钵中研磨。将粉末干燥,转移至瓷坩埚中,并在900℃在空气中加热两次,持续10h。
d)Tb1.8Sm0.2Mo3O12
在丙酮辅助下,将1.6823g(2.250mmol)Tb4O7、2.1591g(15.00mmol)MoO3和0.1744g(0.500mmol)Sm2O3在玛瑙研钵中研磨。将粉末干燥,转移至瓷坩埚中,并在900℃在空气中加热两次,持续10h。
e)Tb1.2Eu0.8Mo3O12
在丙酮辅助下,将1.1215g(1.500mmol)Tb4O7、2.1591g(15.00mmol)MoO3和0.7038g(2.000mmol)Sm2O3在玛瑙研钵中研磨。将粉末干燥,转移至瓷坩埚中,并在900℃在空气中加热两次,持续10h。
f)利用根据本发明制备的组合物Tb1.2Eu0.8Mo3O12磷光体,生产pc-LED:
称出2g含有组合物Tb1.2Eu0.8Mo3O12的磷光体,与8g光学透明的硅酮混合,并随后在行星式搅拌器中混合均匀,以便在整个物质中的磷光体浓度是20重量%。在自动分配器辅助下,将用所述方式得到的硅酮/磷光体混合物施用至近-UV半导体LED的芯片,并加热熟化。用于本实施例中LED表征(characterisation)的近-UV半导体LEDs具有395nm的发射波长,并在350mA的电流强度下操作。利用Instrument Systems CAS 140光谱仪和附加的ISP250积分球,完成LED的光度计表征。通过测定波长依赖的光谱功率密度,表征LED。将LED发射的光的产生的光谱用于计算色点坐标CIE x和y。
附图详述
图1.Cu K-α辐射的Tb2-xLnxMo3O12的X-射线衍射图。
图2.Tb1.999Eu0.001Mo3O12对白色标准物BaSO4的反射光谱。
图3.Tb1.8Eu0.2Mo3O12对白色标准物BaSO4的反射光谱。
图4.TbEuMo3O12对白色标准物BaSO4的反射光谱。
图5.Tb1.8Sm0.2Mo3O12对白色标准物BaSO4的反射光谱。
图6.Tb1.999Eu0.001Mo3O12的激发光谱(λem=615nm)
图7.Tb1.8Eu0.2Mo3O12的激发光谱(λem=615nm)
图8.TbEuMo3O12的激发光谱(λem=615nm)
图9.Tb1.8Sm0.2Mo3O12的激发光谱(λem=600nm)
图10.Tb1.999Eu0.001Mo3O12的发射光谱(λex=487.0nm)
图11.Tb1.8Eu0.2Mo3O12的发射光谱(λex=487.0nm)
图12.TbEuMo3O12的发射光谱(λex=487.0nm)
图13.Tb1.8Sm0.2Mo3O12的发射光谱(λex=487.0nm)
图14.含有Tb2-xEuxMo3O12色点的CIE 1931色图的部分
图15.正交晶Tb2-xEuxMo3O12混晶系列的晶格常数
图16.实施例f)中所述的pc-LED的LED光谱。
Claims (15)
1.式I化合物,
(Tb2)x(Mo1-bWb)yO3x+3y:Ln I
其中
Ln指Sm3+或Eu3+;
x指1、2或3;
1≤y≤8;和
0≤b<1。
2.根据权利要求1所述的化合物,其选自式Ia
(Tb2-aLna)x(Mo1-bWb)yO3x+3y Ia
其中Ln、x、y和b具有权利要求1中所示的含义之一,且0.1≤a≤1。
3.根据权利要求1或2所述的化合物,特征在于其是相纯形式的。
4.根据权利要求1-3中一项或多项所述的化合物,其中0.2≤a≤1。
5.根据权利要求1-4中一项或多项所述的化合物,其中0.4≤a≤1。
6.根据权利要求1-5中一项或多项所述的化合物,其中Ln等于Sm3+。
7.根据权利要求1-6中一项或多项所述的化合物,其中x等于1。
8.根据权利要求1-7中一项或多项所述的化合物,其中y等于3。
9.根据权利要求1-8中一项或多项所述的化合物,其中b等于0。
10.根据权利要求1-9中一项或多项所述的化合物的制备方法,特征在于,在步骤a)中,将选自铕或钐源、钼源和铽源以及任选的钨源的氮化物和氧化物或相应的反应性形式的适当原料混合,以及,在步骤b)中,将混合物热处理。
11.根据权利要求1-9中一项或多项所述的化合物的用于将蓝色或近-UV发射部分或完全转换成较长波长的可见光的用途。
12.发射-转换材料,其含有根据权利要求1-9中一项或多项所述的化合物以及一种或多种其他转换磷光体。
13.具有至少一种原发光源的光源,特征在于所述光源含有至少一种根据权利要求1-9中一项或多项所述的化合物或者根据权利要求12所述的发射转换材料。
14.发光单元,特别是用于显示设备的背光的发光单元,特征在于其含有至少一种根据权利要求13所述的光源。
15.具有背光的显示设备,特别是液晶显示设备(LC显示器),特征在于其含有至少一种根据权利要求14所述的发光单元。
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DE102014003848.3A DE102014003848A1 (de) | 2014-03-18 | 2014-03-18 | Leuchstoffe |
DE102014003848.3 | 2014-03-18 | ||
PCT/EP2015/000345 WO2015139806A1 (de) | 2014-03-18 | 2015-02-17 | Europium-oder samarium-dotierte terbiummolybdate |
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CN106103651A true CN106103651A (zh) | 2016-11-09 |
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CN201580014071.XA Pending CN106103651A (zh) | 2014-03-18 | 2015-02-17 | 掺杂铕或钐的钼酸铽 |
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US (1) | US20170107426A1 (zh) |
EP (1) | EP3119852B1 (zh) |
JP (1) | JP2017519843A (zh) |
KR (1) | KR20160133548A (zh) |
CN (1) | CN106103651A (zh) |
DE (1) | DE102014003848A1 (zh) |
SG (2) | SG11201607767WA (zh) |
TW (1) | TW201542771A (zh) |
WO (1) | WO2015139806A1 (zh) |
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WO2016074876A1 (en) * | 2014-11-13 | 2016-05-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2018185116A2 (de) | 2017-04-07 | 2018-10-11 | Merck Patent Gmbh | Uranyl-sensibilisierte europium-leuchtstoffe |
Citations (2)
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US3437432A (en) * | 1966-07-21 | 1969-04-08 | Du Pont | Single crystals |
CN103275713A (zh) * | 2013-04-03 | 2013-09-04 | 苏州大学 | 一种稀土钼酸盐红色荧光粉、制备方法及应用 |
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US5051277A (en) | 1990-01-22 | 1991-09-24 | Gte Laboratories Incorporated | Method of forming a protective bi-layer coating on phosphore particles |
JP2967559B2 (ja) | 1991-03-29 | 1999-10-25 | 日亜化学工業株式会社 | 蛍光体及びその製造方法 |
US6265068B1 (en) | 1997-11-26 | 2001-07-24 | 3M Innovative Properties Company | Diamond-like carbon coatings on inorganic phosphors |
US20070298250A1 (en) | 2006-06-22 | 2007-12-27 | Weimer Alan W | Methods for producing coated phosphor and host material particles using atomic layer deposition methods |
DE102007056343A1 (de) | 2007-11-22 | 2009-05-28 | Litec Lll Gmbh | Oberflächemodifizierte Leuchtstoffe |
DE102008060680A1 (de) | 2008-12-08 | 2010-06-10 | Merck Patent Gmbh | Oberflächenmodifizierte Silikat-Leuchtstoffe |
RU2456712C1 (ru) * | 2011-03-02 | 2012-07-20 | Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) | Источник белого света |
-
2014
- 2014-03-18 DE DE102014003848.3A patent/DE102014003848A1/de not_active Withdrawn
-
2015
- 2015-02-17 WO PCT/EP2015/000345 patent/WO2015139806A1/de active Application Filing
- 2015-02-17 CN CN201580014071.XA patent/CN106103651A/zh active Pending
- 2015-02-17 EP EP15710101.5A patent/EP3119852B1/de not_active Not-in-force
- 2015-02-17 SG SG11201607767WA patent/SG11201607767WA/en unknown
- 2015-02-17 KR KR1020167028770A patent/KR20160133548A/ko unknown
- 2015-02-17 SG SG10201807889QA patent/SG10201807889QA/en unknown
- 2015-02-17 JP JP2016557974A patent/JP2017519843A/ja active Pending
- 2015-02-17 US US15/127,247 patent/US20170107426A1/en not_active Abandoned
- 2015-03-17 TW TW104108540A patent/TW201542771A/zh unknown
Patent Citations (2)
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US3437432A (en) * | 1966-07-21 | 1969-04-08 | Du Pont | Single crystals |
CN103275713A (zh) * | 2013-04-03 | 2013-09-04 | 苏州大学 | 一种稀土钼酸盐红色荧光粉、制备方法及应用 |
Non-Patent Citations (1)
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S. SALEEM ET.AL,: ""Hypersensitive and forbidden transitions oftrivalent europium ion in Tb1.8Eu0.2(MoO4)3 single crystal"", 《PRAMANA-J.PHYS.》 * |
Also Published As
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EP3119852A1 (de) | 2017-01-25 |
DE102014003848A1 (de) | 2015-09-24 |
SG11201607767WA (en) | 2016-11-29 |
WO2015139806A1 (de) | 2015-09-24 |
TW201542771A (zh) | 2015-11-16 |
JP2017519843A (ja) | 2017-07-20 |
EP3119852B1 (de) | 2018-09-19 |
US20170107426A1 (en) | 2017-04-20 |
KR20160133548A (ko) | 2016-11-22 |
SG10201807889QA (en) | 2018-10-30 |
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