CN106101589A - A kind of high dynamically BiCMOS imageing sensor and pixel cell thereof - Google Patents
A kind of high dynamically BiCMOS imageing sensor and pixel cell thereof Download PDFInfo
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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Abstract
A kind of high dynamically BiCMOS image sensor pixel cells, it is characterised in that: include that optical signal detecting circuit (I1), current amplification circuit (I2) and electric current turn potential circuit (I3)；The optical signal received is converted into photo-signal by described optical signal detecting circuit (I1)；Described current amplification circuit (I2) carries out self adaptation amplification to photo-signal, and wherein current amplification factor is by rear end detection module feedback control, and control signal is S0, S1, S2；Described electric current turns the current signal after potential circuit (I3) will amplify and is converted into voltage signal, as the output voltage signal of pixel.
Description
Technical field
The present invention relates to field of image sensors, particularly relate to a kind of high dynamically BiCMOS imageing sensor.
Background technology
Imageing sensor is a kind of semiconductor device that optical imagery is converted into the signal of telecommunication.Imageing sensor generally may be used
To be divided into charge coupled cell (CCD) and complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.Pass compared to ccd image
Sensor, cmos image sensor makes it increasingly be subject to people's attention because of advantages such as low cost, low-power consumption, high integration,
Cmos image sensor has been widely used in mobile phone camera, PC computer, videophone, photographic head, video camera, safety monitoring, car
The field such as phone, toy of load.Additionally cmos image sensor can be additionally used in the key areas such as military surveillance, guidance, satellite.
The dynamic range of imageing sensor is defined as maximum unsaturation signal and the ratio of minimum detectable signal, Larger Dynamic model
The imageing sensor enclosed can detect the scene information in the range of wider optical signal, and the details detecting image is more rich, dynamic
State scope is the important indicator of imageing sensor image quality.
But, a lot of results of study show, the dynamic range of conventional CMOS image sensor is unable to reach far away nature field
The optical dynamic range of scape, cmos image sensor, to replace ccd image sensor in more areas, opens bigger city
, it is necessary for extending its dynamic range.
From dynamic range defines, can be seen that wanting to improve cmos image sensor dynamic range is necessary for increasing maximum
Unsaturation signal or reduce noise, research shows, reduces circuit noise and realizes that difficulty is big and DeGrain, general by improving
Maximum unsaturation signal realizes dynamic range expansion.Concrete grammar has potential well capacity regulating (Adjusting Well
Capacity) technology, partial exposure (Local Shuttering) technology, logarithmic response (Logarithmic Response) skill
Art, automatic growth control (Automatic Gain Control, AGC) technology, adpative exposure regulation (Adaptive
Adjusting Exposure) technology, Conditional reset (Conditional Reset) technology.The most the more commonly used method master
If logarithmic response technology, Conditional reset technology and automatic gain control.
BiCMOS (Bipolar CMOS) is CMOS and bipolar device is integrated in the technology on same chip, on sheet simultaneously
Integrated with cmos device for formant circuit, special circuit module adds bipolar device.Therefore BiCMOS circuit both had
The advantage having cmos circuit high integration, low-power consumption, can obtain again bipolar circuit high speed, the advantage of big driving force.
The high dynamically BiCMOS imageing sensor of the present invention uses BiCMOS technique to realize photoelectric current amplification, and provides one
Plant photocurrent gain self-adaptation control method.Relative to traditional output voltage gain Self Adaptive Control, the BiCMOS of the present invention
Imageing sensor directly carries out self adaptation amplification to photoelectric current, well avoids photo-signal-voltage signal transformation process
The non-linear deviation of middle appearance.It addition, the high dynamically BiCMOS imageing sensor of the present invention utilizes the crystal being operated in amplification region
Pipe realizes photoelectric current amplification to the amplification of electric current, and the linearity is good, and can obtain the biggest pixel voltage output voltage swing.
Summary of the invention
The core technology of the present invention is to use bipolar transistor circuit to amplify photoelectric current self adaptation, it is achieved to difference
The optical signal detecting of intensity, thus the dynamic range of expanded images sensor.
The invention provides a kind of high dynamically BiCMOS image sensor pixel cells, it includes optical signal detecting circuit
(I1), current amplification circuit (I2) and electric current turn potential circuit (I3)；The light that described optical signal detecting circuit (I1) will receive
Signal is converted into photo-signal；Described current amplification circuit (I2) carries out self adaptation amplification, wherein electric current to photo-signal
Amplification is by rear end detection module feedback control, and control signal is S0, S1, S2；Described electric current turns potential circuit (I3) and will put
Current signal after great is converted into voltage signal, as the output voltage signal of pixel.
Described optical signal detecting circuit (I1) includes a photodiode, the first PMOS (MP1) and the second PMOS
(MP2), described photodiode for being converted to current signal I0 by the optical signal received, then by described first and the
Two PMOS (MP1, MP2) pipe mirror image exports described current amplification circuit (I2).
Described current amplification circuit (I2) include the first transistor (Q1), transistor seconds (Q2), third transistor (Q3),
3rd PMOS (MP3), the 4th PMOS (MP4), the first NMOS tube (MN1), the second NMOS tube (MN2), the 3rd NMOS tube
(MN3), described the first transistor (Q1), transistor seconds (Q2), third transistor (Q3) cascade are used as Current amplifier；Described
One NMOS tube (MN1), the second NMOS tube (MN2), the 3rd NMOS tube (MN3), control switch for current gain, the disconnection of switch or
Guan Bi is controlled by described control signal S0, S1, S2 respectively, and high level is effective.
Described electric current turns potential circuit (I3) and includes the 5th PMOS (MP5), the 6th PMOS (MP6) and the first resistance
(R1), the 5th PMOS (MP5) be mirror image to pipe, the 6th PMOS (MP6) is the enable that described electric current turns potential circuit (I3)
Switch, is selected signal control by row, and described first resistance (R1) is for being converted into electricity by the image current Ip of the 5th PMOS (MP5)
Pressure.
Preferably, in order to ensure that transistor can be operated in amplification region, the cascade progression of transistor is by supply voltage and crystalline substance
Body pipe threshold voltage limits；Described 3rd PMOS (MP3) and described 5th PMOS (MP5) formation mirror image are to pipe, by electric current
It is mirrored to electric current and turns potential circuit.
Preferably, in order to overcome the channel-length modulation of metal-oxide-semiconductor, the channel length of pipe is needed to be designed to ratio by mirror image
Bigger；Described 4th PMOS MP4 be used as current amplification circuit enable switch, by row select signal control, when pixel cell not
During gating, current amplification circuit does not works, thus reduces the quiescent dissipation of pel array.
Present invention also offers a kind of high dynamically BiCMOS imageing sensor, it includes above-mentioned pixel cell.
Present invention also offers a kind of pixel output voltage samples storage electricity for height dynamic BiCMOS imageing sensor
Road, it is characterised in that it includes that operational amplifier, analog to digital conversion circuit, adaptive gain control testing circuit, digital signal solution
Code circuit and memory module；The output O of described operational amplifier connects, as unity gain follower, by pixel with input V-
Output voltage signal equivalent inpnt in described D/A converting circuit；Described D/A converting circuit ADC sampled pixel output electricity
Pressure, and it is converted into digital signal, output to described adaptive gain controls testing circuit；Described adaptive gain controls inspection
Slowdown monitoring circuit is used for detecting whether supplied with digital signal Din meets setting requirement, to control internal state conversion, exports S0, S1, S2
Signal controls current gain, and described adaptive gain controls testing circuit and also exports the Count of Status signal Count of correspondence and adopt
The digital signal Dout of sample magnitude of voltage, described digital signal decoding circuit is defeated for described adaptive gain is controlled testing circuit
The sample voltage value digital signal gone out is decoded, and by decoded pixel output input described memory module, described in deposit
Storage module is used for storing described pixel output.
Present invention also offers a kind of current gain self-adaptation control method for above-mentioned pixel cell, it includes following
Step: the size of (1) detection pixel output voltage value, if magnitude of voltage is less than setting value, increases current gain the most by a certain percentage；
(2) again detect the size of pixel output voltage value, if magnitude of voltage is also less than setting value, the most again increase current gain；(3) when
The pixel output voltage value detected meets to be preset, then decode, store the digital signal of ADC output.
Preferably, the current amplification factor of described the first transistor (Q1) is A1, the electric current of described transistor seconds (Q2)
Amplification is A2, and the current amplification factor of described third transistor (Q3) is A3, when described control signal S0=1 (high electricity
Flat), S1=0 (low level), S2=0 time, the amplification of described current amplification circuit (I2) is A1；When described control signal S0
=0, when S1=1, S2=0, the amplification of described current amplification circuit (I2) is approximately A1 × A2；When described control signal S0
=0, when S1=0, S2=1, the amplification of described current amplification circuit (I2) is approximately A1 × A2 × A3.
Output voltage V_Pixel=Ip × the R1 of described pixel cell, the amplification of Ip=I0 × current amplification circuit.
The present invention utilizes transistor that the amplification of electric current is realized photoelectric current amplification.Current gain controls mainly to pass through
The cascade progression of NMOS tube on-off control transistor realizes.Current gain adaptive control technology can realize HDR
Optical signal detecting, for the optical signal that intensity is bigger, circuit meeting Automatic adjusument is to low current gain, for the light that intensity is less
Signal, circuit meeting Automatic adjusument is to high current gain, and the most either light high light is weak, and ADC can sample suitable pixel
Magnitude of voltage, then by digital signal and the current amplification factor control signal combined decoding of pixel output voltage, obtains from different
The digital signal of light signal strength equity.
The high dynamically BiCMOS imageing sensor advantage of the present invention: 1, use standard BiCMOS process to realize, easy of integration, merit
Consume low；2, current gain adaptive control technology is used, it is possible to achieve the optical signal detecting of HDR；3, the picture of the present invention
All using current mirror between the element each circuit module of unit, anti-external noise ability is strong；4, the pixel unit circuit of the present invention is direct
Photoelectric current is carried out self adaptation amplification, and the linearity is good, and error is little, and the output voltage swing of pixel is big.
Accompanying drawing explanation
Fig. 1 is the theory diagram of the high dynamically BiCMOS image sensor pixel cells of the present invention.
Fig. 2 is the pixel cell schematic diagram of the high dynamically BiCMOS imageing sensor embodiment of the present invention.
Fig. 3 is the circuit module diagram of the pixel output voltage samples storage of imageing sensor of the present invention.
Fig. 4 is the workflow diagram of the high dynamically BiCMOS imageing sensor of the present invention.
Fig. 5 is the state transition graph in Detect module described in Fig. 3.
Detailed description of the invention
Fig. 1 is the theory diagram of the high dynamically BiCMOS image sensor pixel cells of the present invention.As it is shown in figure 1, the present invention
Pixel cell include that optical signal detecting circuit I1, current amplification circuit I2 and electric current turn potential circuit I3.
Fig. 2 is the physical circuit figure of the high dynamically pixel cell of BiCMOS image sensor embodiment of the present invention.Described light
Signal deteching circuit I1 includes a photodiode and two PMOS.First photodiode D1 one end ground connection GND, another
Terminate the drain electrode of the first PMOS MP1, grid and the second PMOS MP2 grid；The source electrode of the first PMOS MP1 and the 2nd PMOS
The source electrode of pipe MP2 meets power vd D, and the drain electrode of the second PMOS connects the base stage of the first transistor Q1.
Described current amplification circuit I2 includes three transistors, three NMOS tube and two PMOS.The first transistor Q1
Base stage connect the drain electrode of the second PMOS MP2, the emitter stage of the first transistor Q1 connects drain electrode and second crystal of the first NMOS tube
The base stage of pipe Q2, the emitter stage of transistor seconds Q2 connects the drain electrode of the second NMOS tube and the base stage of third transistor Q3, and is trimorphism
The emitter stage of body pipe Q3 connects the drain electrode of the 3rd NMOS tube, and the colelctor electrode of transistor Q1, Q2, Q3 connects the drain electrode of the 3rd PMOS MP3；
NMOS tube MN1, the source ground GND of MN2, MN3；The grid of the 3rd PMOS MP3, drain electrode and the grid of the 5th PMOS MP5
Connecting, the source electrode of the 3rd PMOS MP3 and the drain electrode of the 4th PMOS MP4 connect；The source electrode of the 4th PMOS MP4 connects power supply
VDD, the grid of the 4th PMOS MP4 and the grid of the 6th PMOS connect, and are controlled by row and select signal SEL.
Described electric current turns potential circuit I3 and includes two PMOS and a resistance, and the source electrode of the 6th PMOS MP6 connects electricity
Source VDD, the drain electrode of the 6th PMOS MP6 connects the source electrode of the 5th PMOS MP5；The grid of the 5th PMOS MP5 meets the 3rd PMOS
The grid of pipe MP3, the drain electrode of the 5th PMOS MP5 and a termination row of the first resistance R1 select metal-oxide-semiconductor M1, as pixel cell
Voltage output end mouth, the other end ground connection GND of the first resistance R1.
Fig. 3 is that the circuit module of the high dynamically pixel output voltage samples storage of BiCMOS imageing sensor of the present invention shows
Figure, including five submodular circuits, is operational amplifier OPA, analog to digital conversion circuit ADC, adaptive gain control detection respectively
Circuit Detect, digital signal decoding circuit Decode and memory module STORE RAM.The output O of described operational amplifier OPA
Connect, as unity gain follower, by the output voltage signal equivalent inpnt of pixel to D/A converting circuit ADC with input V-
In, ADC can be avoided with pixel to export the sampled voltage change caused that directly connects；Described D/A converting circuit ADC samples picture
Element output voltage, and it is converted into digital signal, output to adaptive gain controls testing circuit；Described adaptive gain
Control testing circuit Detect Main Function and be whether detection supplied with digital signal Din meets setting requirement, thus control inside
State Transferring, output S0, S1, S2 signal controls current gain, the most also to export the Count of Status signal Count of correspondence and adopt
The digital signal Dout of sample magnitude of voltage, adaptive gain controls the concrete State Transferring of testing circuit as shown in Figure 5.
Fig. 4 is the workflow diagram of the high dynamically BiCMOS imageing sensor of the present invention.As shown in Figure 4, the image of the present invention
The workflow of sensor is: first camera shutter is pressed, pixel exposure, and row gating controls to select each row pixel (not gated successively
Pixel enable close), the output voltage of respective pixel by column bus be input in D/A converting circuit ADC process, change
Becoming digital signal, then adaptive gain controls whether testing circuit Detect detection digital signal meets setting, if not meeting
Then it is transformed into NextState, and exports corresponding control signal, until after coincidence detection sets, decoding/storing correct pixel
Output valve, choosing of then going is transformed into next pixel repetitive operation, until completing the storage of all pixel output voltage values.
Fig. 5 is that described adaptive gain controls testing circuit Detect state transition graph.As it is shown in figure 5, initial state
State0, gain control signal S0=1, S1=0, S2=0, now current amplification factor is A1, corresponding pixel output voltage
V_Pixel=Ip × R1=A1 × I0 × R1；If the pixel output voltage detected meets setting, then decode/store pixel defeated
Go out the digital signal of voltage；If magnitude of voltage is the least, then State Transferring is to State1.
The gain control signal of State1 state is S0=0, S1=1, S2=0, and now current amplification factor approximates A1
× A2, corresponding pixel output voltage V_Pixel=Ip × R1=A1 × A2 × I0 × R1；The most again detection pixel output electricity
Pressure, if meeting setting, then decodes/stores the digital signal of pixel output voltage；If magnitude of voltage is the least, then State Transferring arrives
State2。
The gain control signal of State2 state is S0=0, S1=0, S2=1, and now current amplification factor approximates A1
× A2 × A3, corresponding pixel output voltage V_Pixel=A1 × A2 × A3 × I0 × R1, now because being last shape
State, the most no longer detects, directly by the digital signal decoding/storage of pixel output voltage value.After completing decoding storage, under row choosing
One-row pixels, state machine returns to S0 state, repeats this operation, until completing the storage of all pixel output voltage values.
The invention is not restricted to specific embodiment described here, can be based on this for this technical personnel of the field of engineering
Invention thought carries out various obvious change, readjusts and substitute without departing from protection scope of the present invention.Therefore, above
The present invention is simply described in further detail by embodiment, but the present invention is not limited only to above example, is not taking off
In the case of present inventive concept, it is also possible to include other Equivalent embodiments more.
Claims (15)
1. one kind high dynamic BiCMOS image sensor pixel cells, it is characterised in that: include optical signal detecting circuit (I1), electricity
Current amplifier (I2) and electric current turn potential circuit (I3)；The optical signal received is converted by described optical signal detecting circuit (I1)
For photo-signal；Described current amplification circuit (I2) carries out self adaptation amplification, wherein current amplification factor to photo-signal
By rear end detection module feedback control, control signal is S0, S1, S2；Described electric current turns the electricity after potential circuit (I3) will amplify
Stream signal is converted into voltage signal, as the output voltage signal of pixel.
Height the most according to claim 1 dynamic BiCMOS image sensor pixel cells, it is characterised in that: described optical signal
Testing circuit (I1) includes the first photodiode (D1), the first PMOS (MP1) and the second PMOS (MP2), described photoelectricity
Diode for the optical signal received being converted to current signal I0, then by described first and second PMOS (MP1,
MP2) pipe mirror image exports described current amplification circuit (I2).
Height the most according to claim 2 dynamic BiCMOS image sensor pixel cells, it is characterised in that: described electric current is put
Big circuit (I2) include the first transistor (Q1), transistor seconds (Q2), third transistor (Q3), the 3rd PMOS (MP3), the
Four PMOS (MP4), the first NMOS tube (MN1), the second NMOS tube (MN2), the 3rd NMOS tube (MN3), described the first transistor
(Q1), transistor seconds (Q2), third transistor (Q3) cascade are used as Current amplifier；Described first NMOS tube (MN1), second
NMOS tube (MN2), the 3rd NMOS tube (MN3), control switch, being opened or closed respectively by described control of switch for current gain
Signal S0, S1, S2 control, and high level is effective.
Height the most according to claim 3 dynamic BiCMOS image sensor pixel cells, it is characterised in that: described electric current turns
Potential circuit (I3) includes the 5th PMOS (MP5), the 6th PMOS (MP6) and the first resistance (R1), the 5th PMOS (MP5)
For mirror image to pipe, the 6th PMOS (MP6) is the enable switch that described electric current turns potential circuit (I3), row select signal SEL to control
System, described first resistance (R1) is for being converted into voltage by the image current Ip of the 5th PMOS (MP5).
Height the most according to claim 4 dynamic BiCMOS image sensor pixel cells, it is characterised in that: described first light
Electric diode (D1) one end ground connection GND, another termination drain electrode of described first PMOS (MP1), grid and described 2nd PMOS
Pipe (MP2) grid；The source electrode of described first PMOS (MP1) and the source electrode of described second PMOS (MP2) meet power vd D, institute
The drain electrode stating the second PMOS (MP2) connects the base stage of described the first transistor (Q1).
Height the most according to claim 5 dynamic BiCMOS image sensor pixel cells, it is characterised in that: described first is brilliant
The base stage of body pipe (Q1) connects the drain electrode of described second PMOS (MP2), and the emitter stage of described the first transistor (Q1) connects described
The drain electrode of one NMOS tube (MN1) and the base stage of described transistor seconds (Q2), the emitter stage of described transistor seconds (Q2) meets institute
State drain electrode and the base stage of described third transistor (Q3) of the second NMOS tube (MN2), the emitter stage of described third transistor (Q3)
Connecing the drain electrode of described 3rd NMOS tube (MN3), the colelctor electrode of described first, second, third transistor (Q1, Q2, Q3) connects described
The drain electrode of the 3rd PMOS (MP3)；The source ground GND of described first, second, third NMOS tube (MN1, MN2, MN3)；Described
The grid of the 3rd PMOS (MP3), drain electrode connect with the grid of described 5th PMOS (MP5), described 3rd PMOS (MP3)
Source electrode connect with the drain electrode of described 4th PMOS (MP4)；The source electrode of described 4th PMOS (MP4) meets power vd D, described
The grid of the 4th PMOS (MP4) is connected with the grid of described 6th PMOS (MP6), is controlled by row and selects signal SEL.
Height the most according to claim 6 dynamic BiCMOS image sensor pixel cells, it is characterised in that: the described 6th
The source electrode of PMOS (MP6) meets power vd D, and the drain electrode of described 6th PMOS (MP6) connects the source of described 5th PMOS (MP5)
Pole；The grid of described 5th PMOS (MP5) connects the grid of described 3rd PMOS (MP3), described 5th PMOS (MP5)
One termination row of drain electrode and described first resistance (R1) selects metal-oxide-semiconductor (M1), as the voltage output end mouth of pixel cell, and described the
The other end ground connection GND of one resistance (R1).
Height the most according to claim 7 dynamic BiCMOS image sensor pixel cells, it is characterised in that: the described 3rd
Current mirror, to pipe, is turned potential circuit to electric current by PMOS (MP3) and described 5th PMOS (MP5) formation mirror image.
Height the most according to claim 8 dynamic BiCMOS image sensor pixel cells, it is characterised in that: the described 4th
PMOS (MP4) is used as the enable switch of current amplification circuit, row select signal control, when pixel cell is not gated, and electric current
Amplifying circuit does not works.
10. a high dynamic BiCMOS imageing sensor, it includes pixel cell as claimed in any one of claims 1-9 wherein.
11. 1 kinds of pixel output voltage samples storage electricity for the high dynamically BiCMOS imageing sensor described in claim 10
Road, it is characterised in that it includes that operational amplifier, analog to digital conversion circuit, adaptive gain control testing circuit, digital signal solution
Code circuit and memory module；The output O of described operational amplifier connects, as unity gain follower, by pixel with input V-
Output voltage signal equivalent inpnt in described D/A converting circuit；Described D/A converting circuit ADC sampled pixel output electricity
Pressure, and it is converted into digital signal, output to described adaptive gain controls testing circuit；Described adaptive gain controls inspection
Slowdown monitoring circuit is used for detecting whether supplied with digital signal Din meets setting requirement, to control internal state conversion, exports S0, S1, S2
Signal controls current gain, and described adaptive gain controls testing circuit and also exports the Count of Status signal Count of correspondence and adopt
The digital signal Dout of sample magnitude of voltage, described digital signal decoding circuit is defeated for described adaptive gain is controlled testing circuit
The sample voltage value digital signal gone out is decoded, and by decoded pixel output input described memory module, described in deposit
Storage module is used for storing described pixel output.
12. 1 kinds of current gain self-adaptation control methods for the pixel cell described in claim 4-9, it includes following step
Rapid: the size of (1) detection pixel output voltage value, if magnitude of voltage is less than setting value, increase current gain the most by a certain percentage；
(2) again detect the size of pixel output voltage value, if magnitude of voltage is also less than setting value, the most again increase current gain；(3) when
The pixel output voltage value detected meets to be preset, then decode, store the digital signal of ADC output.
13. current gain self-adaptation control methods according to claim 12, it is characterised in that: described the first transistor
(Q1) current amplification factor is A1, and the current amplification factor of described transistor seconds (Q2) is A2, described third transistor
(Q3) current amplification factor is A3, as described control signal S0=1 (high level), S1=0 (low level), S2=0, described
The amplification of current amplification circuit (I2) is A1；As described control signal S0=0, S1=1, S2=0, described Current amplifier
The amplification of circuit (I2) is approximately A1 × A2；As described control signal S0=0, S1=0, S2=1, described Current amplifier
The amplification of circuit (I2) is approximately A1 × A2 × A3.
14. current gain self-adaptation control methods according to claim 13, it is characterised in that: described pixel output voltage
The amplification of V_Pixel=Ip × R1, Ip=I0 × current amplification circuit.
15. current gain self-adaptation control methods according to claim 14, it is characterised in that: initial state State0,
Control signal S0=1, S1=0, S2=0, now current amplification factor is A1, corresponding pixel output voltage V_Pixel=Ip
× R1=A1 × I0 × R1；If the pixel output voltage detected meets setting, then decode/store the numeral of pixel output voltage
Signal；If magnitude of voltage is the least, then State Transferring is to State1.
The control signal of State1 state is S0=0, S1=1, S2=0, and now current amplification factor approximates A1 × A2, corresponding
Pixel output voltage V_Pixel=Ip × R1=A1 × A2 × I0 × R1；The most again pixel output voltage is detected, if meeting
Set, then decode/store the digital signal of pixel output voltage；If magnitude of voltage is the least, then State Transferring is to State2.
The control signal of State2 state is S0=0, S1=0, S2=1, and now current amplification factor approximates A1 × A2 × A3,
Corresponding pixel output voltage V_Pixel=A1 × A2 × A3 × I0 × R1, now because being last state, the most no longer
Detection, directly by the digital signal decoding/storage of pixel output voltage value；After completing decoding storage, row selects next line pixel, shape
State machine returns to S0 state, repeats this operation, until completing the storage of all pixel output voltage values.
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| CN115988350A (en) * | 2022-10-20 | 2023-04-18 | 电子科技大学 | CMOS image sensing, storing and calculating integrated circuit integrating sampling calculation |
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