CN106100625B - 低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 - Google Patents
低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 Download PDFInfo
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- CN106100625B CN106100625B CN201610642769.2A CN201610642769A CN106100625B CN 106100625 B CN106100625 B CN 106100625B CN 201610642769 A CN201610642769 A CN 201610642769A CN 106100625 B CN106100625 B CN 106100625B
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- Prior art keywords
- radio frequency
- flip
- switch
- chip
- frequency switch
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/3827—Portable transceivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Electronic Switches (AREA)
- Transceivers (AREA)
Abstract
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610642769.2A CN106100625B (zh) | 2016-08-08 | 2016-08-08 | 低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610642769.2A CN106100625B (zh) | 2016-08-08 | 2016-08-08 | 低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 |
Publications (2)
Publication Number | Publication Date |
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CN106100625A CN106100625A (zh) | 2016-11-09 |
CN106100625B true CN106100625B (zh) | 2023-01-03 |
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CN201610642769.2A Active CN106100625B (zh) | 2016-08-08 | 2016-08-08 | 低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 |
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CN (1) | CN106100625B (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100976627B1 (ko) * | 2007-12-10 | 2010-08-18 | 한국전자통신연구원 | 밀리미터파 대역 제어회로용 스위치 회로 |
CN102468836A (zh) * | 2010-11-04 | 2012-05-23 | 中国科学院上海微系统与信息技术研究所 | 一种射频单刀多掷开关及用于毫米波全息成像的开关阵列 |
CN103825571B (zh) * | 2014-03-05 | 2017-04-05 | 锐迪科创微电子(北京)有限公司 | 实现阻抗匹配的射频天线开关电路 |
CN205847215U (zh) * | 2016-08-08 | 2016-12-28 | 苏州雷诚芯微电子有限公司 | 低损耗高隔离的倒装芯片小节点阵列射频开关及其移动终端 |
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2016
- 2016-08-08 CN CN201610642769.2A patent/CN106100625B/zh active Active
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CN106100625A (zh) | 2016-11-09 |
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Effective date of registration: 20210202 Address after: Room a328, future center, Advanced Research Institute of China University of science and technology, 5089 Wangjiang West Road, high tech Zone, Hefei City, Anhui Province, 230088 Applicant after: Wang Gan Address before: 215123 4-a-403, creative industry park, 328 Xinghu Road, Suzhou City, Jiangsu Province Applicant before: SUZHOU LEICHENGXIN MICROELECTRONICS Co.,Ltd. |
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Effective date of registration: 20220406 Address after: 245000 301, R & D Building 1, future science and Technology City, No. 59, Meilin Avenue, high tech Industrial Development Zone, Huangshan City, Anhui Province Applicant after: Anhui Sains advanced technology Co.,Ltd. Address before: Room a328, future center, Advanced Research Institute of China University of science and technology, 5089 Wangjiang West Road, high tech Zone, Hefei City, Anhui Province, 230088 Applicant before: Wang Gan |
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