CN106100593A - A kind of broadband ultra-linear amplifier circuit - Google Patents
A kind of broadband ultra-linear amplifier circuit Download PDFInfo
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- CN106100593A CN106100593A CN201510809284.3A CN201510809284A CN106100593A CN 106100593 A CN106100593 A CN 106100593A CN 201510809284 A CN201510809284 A CN 201510809284A CN 106100593 A CN106100593 A CN 106100593A
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- amplifier
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- 239000010953 base metal Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a kind of broadband ultra-linear amplifier circuit, including: bandwidth broadning module, amplifier module, biasing circuit module；Input signal enters the first amplifier of amplifier module, reconnects the second amplifier ... until being connected to output stage after N amplifier；First bandwidth broadning module is connected with the biasing circuit of the first amplifier and the first amplifier, and the second bandwidth broadning module is connected with the biasing circuit of the second amplifier and the second amplifier ... N bandwidth broadning module is connected with the biasing circuit of N amplifier and N amplifier.The invention provides a kind of broadband ultra-linear amplifier circuit, improve the bandwidth of operation of power amplifier.
Description
Technical field
The present invention relates to a kind of amplifier.
Background technology
Bandwidth and the linearity, for obtaining higher message transmission rate, by Modern Communication System
Ask more and more higher.Power amplifier is the important devices that signal sends, and its performance is to communication system
The linearity index of system plays vital effect.
Along with the development of technology, high linearity power amplifier has been one and has inevitably become
Gesture.Such as, former mobile communication frequency range Band38 frequency range is 2570-2620MHz, band40
For 2300-2400MHz, the two frequency range realizes with different power amplifiers respectively.Existing rank
The product demand of section is that band38 expands to band41, and frequency range expands to
2500-2690MHz, simultaneously need to realize band40's and band41 with a power amplifier
The operating frequency range of compatibility, i.e. this amplifier is 2300-2690MHz, meanwhile, max line
Property power requirement keep previous level.This is a significant challenge to the design of power amplifier,
Require that power amplifier to have broader bandwidth and the higher linearity than traditional solution.
Summary of the invention
Technical problem underlying to be solved by this invention is to provide a kind of amplifier, improves power and puts
The bandwidth of operation of big device.
In order to solve above-mentioned technical problem, the invention provides a kind of broadband High Linear and amplify
Device circuit, including: bandwidth broadning module, amplifier module, biasing circuit module；
Input signal enters the first amplifier of amplifier module, reconnects the second amplifier ...
Until being connected to output stage after N amplifier；First bandwidth broadning module and the first amplifier with
And first the biasing circuit of amplifier connect, the second bandwidth broadning module and the second amplifier and
The biasing circuit of the second amplifier connects ... N bandwidth broadning module and N amplifier and
The biasing circuit of N amplifier connects；
Described first amplifier is connect audion Q1 base stage by every value electric capacity C1, and audion Q1 sends out
Penetrating level and pass through inductance L11 ground connection, colelctor electrode connects power supply by inductance L1；Audion Q1 base stage
Connect biasing circuit；
The first described bandwidth broadning module, electric capacity C11 therein is in parallel with diode D11,
Electric capacity C11 two ends connect audion Q1 base stage and emitter stage, the diode of the first amplifier respectively
The emitter stage just terminating audion Q1 of D11, the negative terminal of diode D11 meets audion Q1
Base stage.
In a preferred embodiment: the grounded emitter of the audion Q1 of described first amplifier.
Compared to prior art, technical scheme possesses following beneficial effect:
In circuit of the present invention, because audion Q1 and audion Q2 base stage are electric to the parasitism of emitter-base bandgap grading
Hold Cbe to change along with the change of input signal power, be directed at the signal gain of different frequency
Uneven.Circuit of the present invention is by increasing fixed capacity C11, C22 on the basis of traditional circuit
In parallel with the base of audion Q1, Q2, emitter-base bandgap grading so that total capacitance between the base of Q1, Q2, emitter-base bandgap grading
Value is C+Cbe, thus weakens the Cbe impact on integrated circuit, it is achieved higher communication bandwidth.
In modular design, realize less than C22, employing MIM mode because Q1 is smaller in size than Q2, C11.
In circuit of the present invention, by the basis of Conventional amplifiers biasing circuit, increase diode
The base of D11, D22 and audion Q1, Q2, emitter-base bandgap grading also connect.When input signal amplitude positive liter
Gao Shi, the audion in biasing circuit module can provide the extracurrent needed for positive rising；
And when the amplitude reduction of input signal, the audion in biasing circuit module can not provide anti-
To extract function, now, diode D11, D22 that this patent proposes is by extraction additional electric
Stream, effectively bandwidth and the linearity to circuit provides additional compensation.
Accompanying drawing explanation
Fig. 1 is traditional amplifier circuit figure.
Fig. 2 be traditional amplifier amplifier in the domain of audion.
Fig. 3 is the amplifier circuit figure of the preferred embodiment of the present invention.
Fig. 4 is the circuit detail drawing of the amplifier of the preferred embodiment of the present invention.
Fig. 5 be invention preferred embodiment amplifier in the domain of audion.
Detailed description of the invention
Hereafter by the drawings and specific embodiments, the present invention will be further described.
As a example by terminal power amplifier, as it is shown in figure 1, Conventional amplifiers input signal connects
First amplifier 101, then connect the second amplifier 102, then export to signal.105 is biasing
Circuit module, provides bias current for 101 and 102.Wherein 101 comprise one every value electric capacity
C1 connects the base stage of audion Q1, the grounded emitter of Q1, and colelctor electrode connects electricity by inductance L1
Source.The base stage of Q1 connects biasing circuit module 105.Wherein 102 comprise one every value electric capacity C2
Connecing the base stage of audion Q2, the grounded emitter of Q2, colelctor electrode connects power supply by inductance L2.
The base stage of Q2 connects biasing circuit module 105.Biasing circuit module 105 includes voltage signal Vb1
Connecing the base stage of biasing audion Qb1, the colelctor electrode of Qb1 connects power supply, and emitter stage passes through resistance Re1
Ground connection, connects the base stage of the audion Q1 of the first amplifier 101 by resistance Rb1.Biased electrical
Road module 105 includes that voltage signal Vb2 connects the base stage of biasing audion Qb2, the current collection of Qb2
Pole connects power supply, and emitter stage passes through resistance Re2 ground connection, connects the first amplifier by resistance Rb2
The base stage of the audion Q2 of 102.
Circuit of the present invention as shown in Figure 3-4, a kind of broadband ultra-linear amplifier circuit, including:
Bandwidth broadning module 103,104, amplifier module 101,102, biasing circuit module 105；
Input signal enters the first amplifier of amplifier module, reconnects the second amplifier ...
Until being connected to output stage after N amplifier；First bandwidth broadning module and the first amplifier with
And first the biasing circuit of amplifier connect, the second bandwidth broadning module and the second amplifier and
The biasing circuit of the second amplifier connects ... N bandwidth broadning module and N amplifier and
The biasing circuit of N amplifier connects；
Hereafter as a example by dual-stage amplifier: the first bandwidth broadning module 103 and the first amplifier
The base stage of the audion Q1 of 101 and emitter stage (BE knot) are in parallel.Second bandwidth broadning module
104 is in parallel with the base stage of the audion Q2 of the second amplifier 102 and emitter stage (BE knot)
First bandwidth broadning module 103 includes that electric capacity C11 is in parallel with diode D11, diode
The base stage of the audion Q1 just terminating the first amplifier 101 of D11, diode D11's is negative
Terminate the emitter stage of the audion Q1 of the first amplifier 101.Second bandwidth broadning module 104
In parallel with diode D22 including electric capacity C22, the just termination of diode D22 and amplifier
The base stage of the audion Q2 of 102, the negative terminal of diode D22 meets the three of the second amplifier 102
The emitter stage of pole pipe Q2.
In circuit of the present invention, because audion Q1 and audion Q2 base stage are to the parasitism of emitter-base bandgap grading
Electric capacity Cbe can change along with the change of input signal power, and the signal being directed at different frequency increases
Benefit is uneven.Circuit of the present invention is by increasing fixed capacity C11, C22 on the basis of traditional circuit
In parallel with the base of audion Q1, Q2, emitter-base bandgap grading so that total capacitance between the base of Q1, Q2, emitter-base bandgap grading
Value is C+Cbe, thus weakens the Cbe impact on integrated circuit, it is achieved higher communication bandwidth.
In modular design, realize less than C22, employing MIM mode because Q1 is smaller in size than Q2, C11.
In circuit of the present invention, by the basis of Conventional amplifiers biasing circuit, increase diode D11,
The base of D22 and audion Q1, Q2, emitter-base bandgap grading also connect.When input signal amplitude positive raises,
Audion Qb1, Qb2 of biasing circuit module 105 can provide positive raise needed for extra
Electric current；And when the amplitude reduction of input signal, audion Qb1, Qb2 can not provide anti-
To extract function, now, diode D11, D22 that the present invention proposes is by extraction additional electric
Stream, effectively bandwidth and the linearity to circuit provides additional compensation.
As in figure 2 it is shown, a traditional power amplifier audion domain structure, by B1,
Tri-base metal of B2, B3, and a B0 base metal links together.Wherein, launch
Pole bar E1 and E2 is clipped in B1, between B2, B3, colelctor electrode bar C1 and C2 be distributed in B1 and
The outside of B3.
The domain of power amplifier element audion of the present invention is as it is shown in figure 5, comprise one
Root base metal B2, connects on the left of B2 between base metal B0, and metal routing M1 by chisel
Hole interconnects.B2 meets minimum feature, and length does not limits, i.e. the width of Y-direction keeps minimum.
The size that B0 limited size is punchinged in minimum, i.e. can just be reliably connected with metal routing M1
Minimum shape, a usually rectangle.Comprise emitter stripes E1, E2 lays respectively at base
The both sides up and down of pole metal B2, symmetrical.Comprise emitter stripes E3, E4 lays respectively at base
The both sides up and down of pole metal B0, symmetrical.E3 with E1 joins together, in base metal
The upside of B0 and B2；E4 with E2 joins together, in base metal B0 and the downside of B2.
Comprise colelctor electrode bar C1, be positioned at the upside of E1 and E3；Comprise colelctor electrode bar C2, be positioned at E2
Downside with E4.
A kind of power amplifier element audion domain of the present invention and tradition audion version
The difference of figure is, eliminates B1 and B3 two foundation pole bonding jumper, reduces the face of B0
Long-pending, by the design of E3 and E4, increase the area of E1 and E2 in tradition audion domain.
It is achieved thereby that base stage step less under identical emitter area, the least Cbc electric capacity.
The size of Cbc electric capacity is one of key parameter affecting power amplifier bandwidth and the linearity.Logical
Cross the present invention, bandwidth and the linearity of power amplifier can be effectively improved.
The above, the only present invention preferably detailed description of the invention, but the protection model of the present invention
Enclosing and be not limited thereto, any those familiar with the art is in the skill that the invention discloses
In the range of art, the change that can readily occur in or replacement, all should contain in protection scope of the present invention
Within.Therefore, protection scope of the present invention should be as the criterion with scope of the claims.
Claims (2)
1. a broadband ultra-linear amplifier circuit, it is characterised in that including: bandwidth broadning module, put
Big device module, biasing circuit module；
Input signal enters the first amplifier of amplifier module, reconnects the second amplifier ... until
It is connected to output stage after N amplifier；First bandwidth broadning module is put with the first amplifier and first
The biasing circuit connection of big device, the second bandwidth broadning module and the second amplifier and the second amplifier
Biasing circuit connects ... N bandwidth broadning module and N amplifier and the biasing of N amplifier
Circuit connects；
Described first amplifier is connect audion Q1 base stage, audion Q1 emitting stage by every value electric capacity C1
By inductance L11 ground connection, colelctor electrode connects power supply by inductance L1；Audion Q1 base stage connects biased electrical
Road；
The first described bandwidth broadning module, electric capacity C11 therein is in parallel with diode D11, electric capacity
C11 two ends connect audion Q1 base stage and the emitter stage of the first amplifier respectively, and diode D11 is just
The emitter stage of termination audion Q1, the negative terminal of diode D11 connects the base stage of audion Q1.
A kind of broadband the most according to claim 1 ultra-linear amplifier circuit, it is characterised in that:
The grounded emitter of the audion Q1 of described first amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510809284.3A CN106100593B (en) | 2015-11-20 | 2015-11-20 | A kind of broadband ultra-linear amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510809284.3A CN106100593B (en) | 2015-11-20 | 2015-11-20 | A kind of broadband ultra-linear amplifier circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106100593A true CN106100593A (en) | 2016-11-09 |
| CN106100593B CN106100593B (en) | 2019-04-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510809284.3A Expired - Fee Related CN106100593B (en) | 2015-11-20 | 2015-11-20 | A kind of broadband ultra-linear amplifier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106100593B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0888670B1 (en) * | 1996-12-12 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Linear high-frequency amplifier with high input impedance and high power efficiency |
| US20050035821A1 (en) * | 2003-08-14 | 2005-02-17 | Everton Seth L. | High speed, high resolution amplifier topology |
| CN103023440A (en) * | 2012-12-20 | 2013-04-03 | 中国科学院微电子研究所 | Circuit for improving linearity of power amplifier |
| CN104753473A (en) * | 2015-03-24 | 2015-07-01 | 芜湖航飞科技股份有限公司 | Broadband amplifier |
-
2015
- 2015-11-20 CN CN201510809284.3A patent/CN106100593B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0888670B1 (en) * | 1996-12-12 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Linear high-frequency amplifier with high input impedance and high power efficiency |
| US20050035821A1 (en) * | 2003-08-14 | 2005-02-17 | Everton Seth L. | High speed, high resolution amplifier topology |
| CN103023440A (en) * | 2012-12-20 | 2013-04-03 | 中国科学院微电子研究所 | Circuit for improving linearity of power amplifier |
| CN104753473A (en) * | 2015-03-24 | 2015-07-01 | 芜湖航飞科技股份有限公司 | Broadband amplifier |
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| Publication number | Publication date |
|---|---|
| CN106100593B (en) | 2019-04-26 |
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Effective date of registration: 20210222 Address after: B104, Chuangke street, sanchuangyuan, 3001, south section of Shiji Avenue, Luoshan street, Jinjiang City, Quanzhou City, Fujian Province, 362000 Patentee after: Jinjiang Sanwu Microelectronics Co.,Ltd. Address before: Room 506, 56 Huoju Road, Huli District, Xiamen City, Fujian Province, 361000 Patentee before: XIAMEN YUZHEN IC TECHNOLOGIES Co.,Ltd. |
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Granted publication date: 20190426 |