CN106098802A - 一种局域表面等离子增强的PtSi红外探测器及其制备方法 - Google Patents
一种局域表面等离子增强的PtSi红外探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种局域表面等离子增强的PtSi红外探测器，自上而下分别为二氧化硅介质、PtSi金属膜、p‑Si衬底以及p‑Si衬底的底部覆盖的二氧化硅反射膜；二氧化硅介质中具有金属氧化物微纳米颗粒阵列；金属氧化物微纳米颗粒阵列为采用类金属材料铝掺杂氧化锌制成的金属球有序阵列。本发明解决了传统的探测器因吸收效率在中波红外波段(3μm‑5μm)低导致量子效率不高的问题，改善了探测器的热灵敏度。
Description
技术领域
本发明属于红外成像领域，具体涉及一种局部表面等离子增强的PtSi红外探测器及其制备方法。
背景技术
硅化物肖特基势垒红外探测器是红外光子探测器，由罗姆空军发展中心的Shepher和Yang在1973年提出，开辟了使用硅作为基底材料制作红外探测器的一个新领域。由于硅材料电子学性能优良，以硅为基底材料的红外探测器制作时，可充分利用集成电路(IC)生产中的成熟技术、工艺和设备等，进行大批量、低成本、高产率的生产。硅化物肖特基势垒红外探测器由金属、半导体接触形成，其代表性探测器主要有铂硅(PtSi)、钯硅(Pd2Si)、铱硅(IrSi)、钴硅(Co2Si)和镍硅(NiSi)等。其中以制冷PtSi肖特基势垒红外探测器应用最为广泛，相比其它探测器具有以下优点：
(1)容易制作大面阵
目前CCD芯片的规模已达到亿像素量级，与之相比，大部分红外焦平面探测器的规模相差1个数量级以上。PtSi红外探测器与Si CCD单片集成，所以可在亿像素的CCD上发展亿像素的PtSi红外探测器。
(2)响应光谱范围宽
PtSi红外探测器响应光谱范围宽，最宽可达1μm-5μm，除了在常用的各种激光器波长(0.904μm，1.06μm，1.18μm，3.37μm)上使用外，还用于木星红外极光的探测(探测木星红外极光的四个波段：1.1μm-1.4μm；1.5μm-1.8μm；2.0μm-2.4μm；3μm-4μm)。
(3)响应均匀性好
良好的响应均匀性是低信噪比下目标探测与识别的重要前提，PtSi红外探测器非均匀性通常小于1％，这非常适合在低背景(一般指太空低温环境，温度大约为3K-4K)应用，比如空间碎片的探测。另外，在低背景下，PtSi红外探测器在不需额外制冷的情况下可将暗电流密度降到(大约为10-16A/cm2)空间探测要求的水平，在将读出噪声抑制到可忽略的情况下，可获得低温背景限性能。
(4)制造成本低
PtSi红外探测器能用标准Si工艺来实现的红外探测器，因此制造方便容易，成本低。
(5)时间稳定性高
PtSi红外探测器进行一次非均匀性校正可持续工作的时间约为10h的数量级，用作光谱仪测试数据重复性好。
上述优点使PtSi红外探测器在多光谱/宽光谱成像、激光探测、天文观测、医疗诊断等领域的潜在应用仍然吸引着人们的关注。但是，吸收效率低的不足导致量子效率较低，随着其它红外探测器技术的迅速发展，PtSi红外探测器的应用面临着严峻的挑战。
发明内容
有鉴于此，本发明提供了一种局域表面等离子增强的PtSi红外探测器及其制备方法，解决了传统的探测器因吸收效率在中波红外波段(3μm-5μm)低导致量子效率不高的问题，改善了探测器的热灵敏度。
为了达到上述目的，本发明的技术方案为：一种局域表面等离子增强的PtSi红外探测器，自上而下分别为二氧化硅介质、PtSi金属膜、p-Si衬底以及p-Si衬底的底部覆盖的二氧化硅反射膜。
二氧化硅介质中具有金属氧化物微纳米颗粒阵列。
金属氧化物微纳米颗粒阵列为采用类金属材料铝掺杂氧化锌制成的金属球有序阵列。
优选地，金属氧化物微纳米颗粒阵列中金属球的材质为由ZnO掺杂Al2O3制成的Al:ZnO金属氧化物，该Al:ZnO金属氧化物材料载流子浓度为4.2×1020cm-3；金属球的半径为0.65μm；金属球最低点与PtSi金属膜的距离为0.4μm。
优选地，二氧化硅抗反射膜的厚度在0.4μm-0.6μm之间。
进一步地，本发明提供了一种局域表面等离子增强的PtSi红外探测器的制备方法，其特征在于，包括如下步骤：
步骤一、采用PtSi红外探测器，该PtSi红外探测器包括自上而下的PtSi金属膜和p-Si衬底两层结构；
步骤二、在及p-Si衬底的底部蒸镀一层二氧化硅抗反射膜；
步骤三、在PtSi金属膜上淀积二氧化硅介质层；
步骤四、在二氧化硅介质层上淀积Al:ZnO金属氧化物，并刻蚀成球形有序阵列。
有益效果：
本发明可将探测器的外量子效率提高，制作工艺与常规PtSi红外探测器兼容。红外辐射经过p-Si衬底到达PtSi金属膜，被PtSi金属膜透射的部分红外辐射利用Al:ZnO金属氧化物微纳米颗粒表面电子振荡形成的局域表面等离子激元使其发生大角度散射，增加PtSi层吸收红外辐射的光学路径长度，导致光学吸收增加，进而增加探测器的外量子效率。
附图说明
图1为传统PtSi红外探测器结构示意图；
图2为本发明实施例金属氧化物微纳米颗粒局域表面等离子增强的PtSi红外探测器结构示意图；
图3为本发明实施例Al:ZnO金属氧化物材料的介电常数实部和虚部与波长的关系；
图4为本发明实施例Al:ZnO金属氧化物结构颗粒参数对PtSi红外探测器吸收的影响(传统结构的吸收效率也给出)。
具体实施方式
下面结合附图并举实施例，对本发明进行详细描述。
本发明所提出的一种亚波长光栅抗反射结构和金属氧化物微纳米颗粒局域表面等离子增强的PtSi红外探测器，该种探测器设计的基本思想为：使用传统的PtSi红外探测器，本实施例中所针对的传统PtSi红外探测器结构如图1所示，具有铝(Al)反射镜、二氧化硅光腔介质、PtSi金属膜(3nm左右)、p-Si衬底(450μm左右)和二氧化硅抗反射膜(0.8μm左右)；在该传统的PtSi红外探测器的PtSi金属膜上淀积二氧化硅介质层，在其上再淀积Al:ZnO金属氧化物材料，并刻蚀成球形有序阵列，新结构如图2所示。
实施例
根据上述基本思想，以金属氧化物微纳米颗粒局域表面等离子增强的PtSi红外探测器为例，通过对Al:ZnO金属氧化物微纳米颗粒参数的优化，尽量使PtSi层在3μm-5μm整个波段的吸收最大。通过控制Al2O3的质量百分比为0.5wt％,3wt％,2wt％,1wt％，可以得到载流子浓度分别为4.2×1020cm-3,6.2×1020cm-3,7.2×1020cm-3,1.2×1021cm-3的Al:ZnO金属氧化物。按照Drude模型，可以计算出Al:ZnO金属氧化物材料的介电常数实部εr和介电常数虚部εi与波长的关系，如图3所示。Al:ZnO金属氧化物材料的介电常数实部εr和虚部εi均小于传统金属金、银的值，介电常数实部小于传统金属意味着等离子波长可能可以延伸到可见光、近红外以外的中波红外波段，介电常数虚部小于传统金属意味着光学损失低适合实际使用。为使PtSi红外探测器在3μm-5μm探测波段范围内均有可能发生局域表面等离子激元共振效应，这样，我们选择载流子浓度4.2×1020cm-3的Al:ZnO金属氧化物，此时对应的Al2O3的质量百分比为0.5wt％。图3(b)显示在该浓度下，光学损失也较低。然后经过大量仿真得到Al:ZnO金属氧化物微纳米颗粒的半径、Al:ZnO金属氧化物微纳米颗粒与PtSi金属膜的距离的基本优化值，然后取这些优化值，再对其中每一个参数进行局部优化。最后数值仿真得出Al:ZnO金属氧化物微纳米颗粒的半径r＝0.65μm，Al:ZnO金属氧化物微纳米颗粒与PtSi金属膜的距离p＝0.4μm，吸收最大，得到Al:ZnO金属氧化物结构颗粒参数对PtSi红外探测器吸收的影响如图4所示。为了便于比较，也给出了传统结构的吸收效率。
综上，以上仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (4)
1.一种局域表面等离子增强的PtSi红外探测器，其特征在于，自上而下分别为二氧化硅介质、PtSi金属膜、p-Si衬底以及p-Si衬底的底部覆盖的二氧化硅反射膜；
所述二氧化硅介质中具有金属氧化物微纳米颗粒阵列；
所述金属氧化物微纳米颗粒阵列为采用类金属材料铝掺杂氧化锌制成的金属球有序阵列。
2.如权利要求1所述的一种局域表面等离子增强的PtSi红外探测器，其特征在于，所述金属氧化物微纳米颗粒阵列中金属球的材质为由ZnO掺杂Al2O3制成的Al:ZnO金属氧化物，该Al:ZnO金属氧化物材料载流子浓度为4.2×1020cm-3；
所述金属球的半径为0.65μm；
所述金属球最低点与PtSi金属膜的距离为0.4μm。
3.如权利要求1或者2所述的一种局域表面等离子增强的PtSi红外探测器，其特征在于，所述二氧化硅抗反射膜的厚度在0.4μm-0.6μm之间。
4.一种如权利要求1所述的局域表面等离子增强的PtSi红外探测器的制备方法，其特征在于，包括如下步骤：
步骤一、采用PtSi红外探测器，该PtSi红外探测器包括自上而下的PtSi金属膜和p-Si衬底两层结构；
步骤二、在及p-Si衬底的底部蒸镀一层二氧化硅抗反射膜；
步骤三、在PtSi金属膜上淀积二氧化硅介质层；
步骤四、在二氧化硅介质层上淀积Al:ZnO金属氧化物，并刻蚀成球形有序阵列。
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