CN106098785A - A kind of transistor with the steady characteristic of light and manufacture method thereof - Google Patents
A kind of transistor with the steady characteristic of light and manufacture method thereof Download PDFInfo
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- CN106098785A CN106098785A CN201610423628.1A CN201610423628A CN106098785A CN 106098785 A CN106098785 A CN 106098785A CN 201610423628 A CN201610423628 A CN 201610423628A CN 106098785 A CN106098785 A CN 106098785A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 230000004888 barrier function Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 4
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- 239000010959 steel Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000006229 carbon black Substances 0.000 claims description 3
- 239000000975 dye Substances 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 15
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of transistor with the steady characteristic of light and manufacture method thereof, described transistor includes substrate, the first light absorbing zone, grid, source electrode, drain electrode, patterned semiconductor layer, insulating barrier, the second light absorbing zone；Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with insulating barrier, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering gate area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover on patterned semiconductor layer, grid and source electrode.Patterned semiconductor in transistor arrangement of the present invention can avoid being subject to above and below the irradiation of light cause characteristic to produce changing.
Description
Technical field
The present invention relates to transistor arrangement and manufacture field, be specifically related to a kind of transistor with light stability and system thereof
Make method.
Background technology
Increasingly mature photoelectric technology and semiconductor fabrication, driven the flourish of flat-panel screens.Wherein, thin
Film transistor display has the operation advantages such as voltage is low, response speed is fast, lightweight and volume is little because of it, is increasingly becoming master
The display product of stream.TFT thin film transistor monitor mainly utilizes thin film transistor (TFT) to control the image quality of display.
But, the semiconductor layer in thin-film transistor structure, its characteristic is highly prone to the impact that light irradiates, and then produces
Change.The most common thin-film transistor structure generally can be divided into top electrode thin film transistor (TFT) and hearth electrode thin film transistor (TFT).
With regard to current thin-film transistor structure, either top electrode thin film transistor (TFT) or hearth electrode thin film transistor (TFT), by front light
After source, backlight or external light source irradiate, the starting voltage of the semiconductor layer in thin film transistor (TFT), drive electric current, secondary face
The characteristics such as boundary's slope all can produce change, causes the reliability of thin film transistor (TFT) to decline.
Prior art is stopping on UV light, mainly or intercepts with thin film or the coating UV-cut material of UV-cut,
This mode adds extra cost, and needs to increase the processing procedure of a laminating.The material of UV-cut is also required to do for wave band
Particularly select, the longer number of times being necessary for increasing coating of wave band if desired stopped.In prior art, thin film transistor (TFT) is also
Do not take into account lower section probably due to penetrate or reflection substrate (glass, plastics, metallic composite) is to OTFT
Impact.
Summary of the invention
The technical problem to be solved is to provide a kind of transistor with the steady characteristic of light and manufacture method thereof, this
Thin film transistor (TFT) the most all has light absorbing zone, not only avoids the patterned semiconductor layer in transistor arrangement by top light
The irradiation of line causes characteristic to produce change, and the patterned semiconductor layer that it also avoid in transistor arrangement is shone by lower section light
Penetrate and cause characteristic to produce change.
For solving above-mentioned technical problem, the technical solution used in the present invention is:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
According to such scheme, described insulating barrier has opening, and in described insulating layer openings position, the second light absorbing zone also has
One opening, is provided with pixel electrode and covers on the second light absorbing zone, and by insulating barrier and the opening of the second light absorbing zone, institute
State pixel electrode to contact with drain electrode.
According to such scheme, the material of described patterned semiconductor layer includes organic semiconducting materials or inorganic semiconductor
Material.
According to such scheme, described substrate is flexible glass, plastics or rustless steel composite base material.
According to such scheme, the sheet resistance of described first light absorbing zone and the second light absorbing zone is between 1012Ohm/unit plane
Amass to 1015Between ohm/unit are, the absorption spectrum wavelength of described first light absorbing zone and the second light absorbing zone is at 750nm
Below.
According to such scheme, the material of described first light absorbing zone and the second light absorbing zone include black photoresist or
The dark material of absorbable wavelength of light, wherein the additive in black photoresist includes dyestuff, carbon black and titanium
In any.
A kind of transistor fabrication process with the steady characteristic of light, comprises the following steps:
Substrate is formed the first light absorbing zone；
First light absorbing zone prepares grid；
Forming insulating barrier, described insulating barrier covers on light absorbing zone and grid, and described insulating barrier has an opening；
Preparing source electrode and drain electrode on described insulating barrier, described source electrode and drain electrode are isolated, and described source electrode and drain electrode phase
Area of isolation is positioned on grid；
Preparation patterned semiconductor layer, described patterned semiconductor position is just to grid, and its area is overlapped in described grid
Area, and contact with source electrode and drain electrode；
Preparing the second light absorbing zone, described second light absorbing zone covers on grid, source electrode and patterned semiconductor layer；
By the second light absorbing zone opening, spill drain electrode；
Preparing pixel electrode, described pixel electrode covers on the second light absorbing zone, and by the second light absorbing zone
Opening contacts with drain electrode.
According to such scheme, described first light absorbing zone and the second light absorbing zone use dry type manufacturing process or wet type system
Make technique to prepare.
According to such scheme, described wet type manufacturing process is included on this substrate and is coated.
According to such scheme, described dry type manufacturing process is carried out in vacuum equipment.
Compared with prior art, the invention has the beneficial effects as follows: the present invention has the first light absorbing zone and the second light absorbs
Layer, is separately positioned on the position up and down of transistor, owing to first, second light absorbing zone has overlapping with patterned semiconductor layer
Absorption spectrum wavelength, and the area of the area covering patterned semiconductor layer of first, second light absorbing zone, so using the present invention
After structure, transistor is in the case of being irradiated by light, and subwave length is able to first be absorbed by first, second light absorbing zone, makes
Patterned semiconductor in transistor arrangement can avoid being subject to above and below the irradiation of light cause characteristic to produce changing.Separately
Outward, use BM as photoresist layer, can effectively stop light, reduce the impact on organic semiconductor device；In optical wavelength 750nm
Hereinafter, black has absorption, and available volume to volume mode manufactures this transistor arrangement.
Accompanying drawing explanation
Fig. 1 is the transistor arrangement schematic diagram disclosed in prior art.
Fig. 2 is the structural representation after existing transistor is improved by the present invention.
Fig. 3 is the transistor arrangement schematic diagram that the present invention has the steady characteristic of light.
Fig. 4 is the manufacture process schematic diagram that the present invention has the transistor of the steady characteristic of light.
Performance diagram before and after transistor irradiation when Fig. 5 is not use BM photoresist layer.
Fig. 6 is characteristic curve diagram before and after the transistor irradiation after using BM photoresist layer.
In figure: 1-substrate；2-the first light absorbing zone；3-grid；4-insulating barrier；5-source electrode；6-drains；7-patterning is partly led
Body layer；8-the second light absorbing zone；9-pixel electrode.
Detailed description of the invention
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.Although the present invention will be in conjunction with
Some detailed description of the invention are illustrated and illustrate, but it should be noted that the present invention is not merely confined to these embodiment party
Formula.On the contrary, the amendment carrying out the present invention or equivalent, all should contain in the middle of scope of the presently claimed invention.
The present invention avoids emphatically OTFT to be caused component characteristic to be affected by the irradiation of light, quasiconductor material
Material is highly susceptible to the impact of light.When light irradiates, assembly starting voltage (threshold voltage) is drifted about, and drives
Electric current changes, and sub-threshold slope (subthresholdslope) changes, and causes assembly reliability and characteristic to reduce, limits
The application of product.Particularly in terms of driving and in the selection of IC, cause great difficulty, therefore, manufacture can be improved
Cost, loses competitiveness.When manufacturing traditional monitor, due on traditional monitor material self character and its modular construction
Difference, therefore without the problem of this respect.But in organic semiconductor assembly, but can because of the material characteristic to light sensitive,
Component characteristic is caused to drift about.Although attempting (such as using lighttight electrode by traditional mode instead, or increasing thickness of electrode
Deng) light is blocked so that light is not easily accessed semiconductor layer, but effect is the best.
The present invention proposes a kind of transistor arrangement and manufacture method, can be plus the manufacture of light absorbing zone in device process
Process, it is to avoid light enters, so that component characteristic changes.This light absorbing zone is incorporated into system at present by manufacture method of the present invention
Among journey, not only will not therefore change existing processing procedure, and make assembly have the ability of upper and lower light absorbing zone, to simplify processing procedure,
Promote component characteristic, and control in manufacturing cost, there is help greatly.
In the prior art, lower section is not taken into account probably due to penetrate or reflection substrate (glass or flexible glass, is moulded
Material, metallic composite) impact on OTFT.The present invention be directed to organic photoelectric assembly material itself easily because of
Absorb visible ray, cause the drift of component characteristic, it is proposed that light absorbing zone is integrated in electronic components processing procedure, it is to avoid can
See the light impact on organic photoelectric assembly characteristic.As it is shown in figure 5, when assembly is under White-LED lamp, and characteristic transformation curve has
Institute's drift (dotted line is the result do not measured in the case of illumination, and solid line is the characteristic inversion cuver after illumination).Based on this
Reason, does the process (thickness of electrode is increased by such as top gate structure) being in the light for other the mode used above, though
So there is a preliminary effect, but the problem that but cannot remove the assembly drift caused because of light completely.Light absorbing zone is used to subtract
Few light impact on component characteristic, in material selects, whether Black Matrix photoresistance is the most easily to obtain and be easily verified that
Feasible material.
Embodiment 1:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
Embodiment 2:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
Described insulating barrier has opening, and in described insulating layer openings position, the second light absorbing zone also has an opening, is provided with picture
Element electrode covers on the second light absorbing zone, and by insulating barrier and the opening of the second light absorbing zone, described pixel electrode with
Drain electrode contacts.
Embodiment 3:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
The material of described patterned semiconductor layer includes organic semiconducting materials or inorganic semiconductor material.
Embodiment 4:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
Described substrate is flexible glass, plastics or rustless steel composite base material.
Embodiment 5:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
The sheet resistance of described first light absorbing zone and the second light absorbing zone is between 1012Ohm/unit are is to 1015Ohm/
Between unit are, the absorption spectrum wavelength of described first light absorbing zone and the second light absorbing zone at below 750nm, and
It is optimal between 290nm to 750nm.
Embodiment 6:
A kind of transistor with the steady characteristic of light, including substrate, the first light absorbing zone, grid, source electrode, drains, patterns
Semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with absolutely
Edge layer, is provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, and it is isolated region just to grid
Pole；Being additionally provided with patterned semiconductor layer, described patterned semiconductor layer sets between the source and drain, and its area covering grid
Area, contacts with source electrode and drain electrode the most respectively；It is provided with the second light absorbing zone to cover in patterned semiconductor layer, grid and source
On pole.
The material of described first light absorbing zone and the second light absorbing zone includes black photoresist or absorbable light ripple
Long dark material, wherein the additive in black photoresist includes any in dyestuff, carbon black and titanium.
The manufacture method that a kind of transistor with the steady characteristic of light that the present invention provides uses, comprises the following steps:
Substrate is formed the first light absorbing zone；
First light absorbing zone prepares grid；
Forming insulating barrier, described insulating barrier covers on light absorbing zone and grid, and described insulating barrier has an opening；
Preparing source electrode and drain electrode on described insulating barrier, described source electrode and drain electrode are isolated, and described source electrode and drain electrode phase
Area of isolation is positioned on grid；
Preparation patterned semiconductor layer, described patterned semiconductor position is just to grid, and its area is overlapped in described grid
Area, and contact with source electrode and drain electrode；
Preparing the second light absorbing zone, described second light absorbing zone covers on grid, source electrode and patterned semiconductor layer；
By the second light absorbing zone opening, spill drain electrode；
Preparing pixel electrode, described pixel electrode covers on the second light absorbing zone, and by the second light absorbing zone
Opening contacts with drain electrode.
Concrete, described first light absorbing zone and the second light absorbing zone use dry type manufacturing process or wet type manufacturing process
Preparation.
Concrete, described wet type manufacturing process is included on this substrate and is coated.
Concrete, described dry type manufacturing process is carried out in vacuum equipment.
When assembly is in the case of having light source to irradiate, it is identical in the case of its component characteristic and unglazed photograph, therefore originally
Transistor arrangement and preparation method that invention provides are feasible.This electric crystal structure and design can be applicable to BGTC, BGBC,
The structures such as TGTC, TGBC, this manufacture method can be that volume to volume produces, and base version can be flexible glass, plastics, rustless steel composite base material
Deng, photoresist layer is not limited to black photoresistance (wavelength can absorb) at below 750nm.
Above detailed description of the invention and accompanying drawing are only the conventional embodiment of the present invention.Obviously, without departing from claims
Can there is various supplement on the premise of the present invention spirit defined and invention scope, revise and replace.Those skilled in the art
It should be understood that the present invention in actual applications can be according to concrete environment and job requirement on the premise of without departing substantially from invention criterion
It is varied from form, structure, layout, ratio, material, element, assembly and other side.Therefore, embodiment of disclosure at this
Being merely to illustrate and unrestricted, the scope of the present invention is defined by appended claim and legal equivalents thereof, and is not limited to before this
Description.
Claims (10)
1. a transistor with the steady characteristic of light, it is characterised in that include substrate, the first light absorbing zone, grid, source electrode, leakage
Pole, patterned semiconductor layer, insulating barrier, the second light absorbing zone；
Described first light absorbing zone is placed on substrate, is provided with grid on the first light absorbing zone, and described grid is provided with insulating barrier,
Being provided with drain electrode and source electrode on described insulating barrier, and described drain electrode and source electrode are isolated, it is isolated region just to grid；Also set
Patterned semiconductor layer, described patterned semiconductor layer is had to set between the source and drain, and its area covering gate area, also
Contact with source electrode and drain electrode respectively；It is provided with the second light absorbing zone to cover on patterned semiconductor layer, grid and source electrode.
A kind of transistor with the steady characteristic of light, it is characterised in that described insulating barrier has out
Mouthful, in described insulating layer openings position, the second light absorbing zone also has an opening, is provided with pixel electrode and covers at the second light absorbing zone
On, and by insulating barrier and the opening of the second light absorbing zone, described pixel electrode contacts with drain electrode.
A kind of transistor with the steady characteristic of light, it is characterised in that described patterning is partly led
The material of body layer includes organic semiconducting materials or inorganic semiconductor material.
A kind of transistor with the steady characteristic of light, it is characterised in that described substrate is flexible glass
Glass, plastics or rustless steel composite base material.
A kind of transistor with the steady characteristic of light, it is characterised in that described first light absorbing zone and
The sheet resistance of the second light absorbing zone is between 1012Ohm/unit are is to 1015Between ohm/unit are, described first light is inhaled
Receive the absorption spectrum wavelength of layer and the second light absorbing zone at below 750nm.
A kind of transistor with the steady characteristic of light, it is characterised in that described first light absorbing zone and
The material of the second light absorbing zone includes black photoresist or the dark material of absorbable wavelength of light, and wherein black is photic anti-
Additive in erosion agent includes any in dyestuff, carbon black and titanium.
7. a transistor fabrication process with the steady characteristic of light, it is characterised in that comprise the following steps:
Substrate is formed the first light absorbing zone；
First light absorbing zone prepares grid；
Forming insulating barrier, described insulating barrier covers on light absorbing zone and grid, and described insulating barrier has an opening；
Preparing source electrode and drain electrode on described insulating barrier, described source electrode and drain electrode are isolated, and described source electrode and drain electrode are isolated
Region is positioned on grid；
Preparation patterned semiconductor layer, described patterned semiconductor position is just to grid, and its area is overlapped in the face of described grid
Long-pending, and contact with source electrode, drain electrode；
Preparing the second light absorbing zone, described second light absorbing zone covers on grid, source electrode and patterned semiconductor layer；
By the second light absorbing zone opening, spill drain electrode；
Preparing pixel electrode, described pixel electrode covers on the second light absorbing zone, and by the opening of the second light absorbing zone
Contact with drain electrode.
A kind of transistor fabrication process with the steady characteristic of light, it is characterised in that described first light
Absorbed layer and the second light absorbing zone use dry type manufacturing process or wet type manufacturing process to prepare.
A kind of transistor fabrication process with the steady characteristic of light, it is characterised in that described wet type system
Make technique to be included on this substrate and be coated.
A kind of transistor fabrication process with the steady characteristic of light, it is characterised in that described dry type
Manufacturing process is carried out in vacuum equipment.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610423628.1A CN106098785A (en) | 2016-06-15 | 2016-06-15 | A kind of transistor with the steady characteristic of light and manufacture method thereof |
| PCT/CN2017/086933 WO2017215454A1 (en) | 2016-06-15 | 2017-06-02 | Transistor with light stability characteristics and manufacturing method therefor |
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| CN201610423628.1A CN106098785A (en) | 2016-06-15 | 2016-06-15 | A kind of transistor with the steady characteristic of light and manufacture method thereof |
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| CN106098785A true CN106098785A (en) | 2016-11-09 |
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| WO (1) | WO2017215454A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017215454A1 (en) * | 2016-06-15 | 2017-12-21 | 成都捷翼电子科技有限公司 | Transistor with light stability characteristics and manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2590428A (en) * | 2019-12-17 | 2021-06-30 | Flexanable Ltd | Semiconductor devices |
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| CN1292152A (en) * | 1998-02-23 | 2001-04-18 | 剑桥显示技术有限公司 | Display devices |
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| CN1917230A (en) * | 2006-09-07 | 2007-02-21 | 友达光电股份有限公司 | Display in low reflectivity built from self-luminescence elements |
| US20120146039A1 (en) * | 2008-03-13 | 2012-06-14 | Sony Corporation | Thin film transistor and display |
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| CN104851917A (en) * | 2014-02-18 | 2015-08-19 | 纬创资通股份有限公司 | Transistor structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098785A (en) * | 2016-06-15 | 2016-11-09 | 成都捷翼电子科技有限公司 | A kind of transistor with the steady characteristic of light and manufacture method thereof |
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2016
- 2016-06-15 CN CN201610423628.1A patent/CN106098785A/en active Pending
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- 2017-06-02 WO PCT/CN2017/086933 patent/WO2017215454A1/en active Application Filing
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| CN1292152A (en) * | 1998-02-23 | 2001-04-18 | 剑桥显示技术有限公司 | Display devices |
| CN1674227A (en) * | 2004-03-04 | 2005-09-28 | 株式会社半导体能源研究所 | Method for forming pattern, thin film transistor, display device and method for manufacturing the same and application |
| CN1917230A (en) * | 2006-09-07 | 2007-02-21 | 友达光电股份有限公司 | Display in low reflectivity built from self-luminescence elements |
| US20120146039A1 (en) * | 2008-03-13 | 2012-06-14 | Sony Corporation | Thin film transistor and display |
| CN104851917A (en) * | 2014-02-18 | 2015-08-19 | 纬创资通股份有限公司 | Transistor structure and manufacturing method thereof |
| CN104752489A (en) * | 2015-04-10 | 2015-07-01 | 深圳市华星光电技术有限公司 | Array baseplate, display device and method used for manufacturing array baseplate |
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| WO2017215454A1 (en) * | 2016-06-15 | 2017-12-21 | 成都捷翼电子科技有限公司 | Transistor with light stability characteristics and manufacturing method therefor |
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| WO2017215454A1 (en) | 2017-12-21 |
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