CN106098528B - A kind of apparatus and method for reducing ionic migration spectrometer ion gate inductive kick - Google Patents
A kind of apparatus and method for reducing ionic migration spectrometer ion gate inductive kick Download PDFInfo
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Abstract
A kind of apparatus and method for reducing ionic migration spectrometer ion gate inductive kick, the device includes the adjustable ion gate driver of bipolarity, it includes signal generator and two direct current adjustable isolation electric powers, two direct current adjustable isolation electric powers are respectively to two arrays of electrodes output voltage on ion gate, signal generator controls phase of two direct current adjustable isolation electric powers to two arrays of electrodes output voltage on ion gate, the regulation to two arrays of electrodes voltage amplitude value difference on ion gate is realized by adjusting the output of two direct current adjustable isolation electric powers, and/or by the output of Regulate signal generator to realize the regulation to two arrays of electrodes voltage phase difference on ion gate, so that electromagnetic radiation caused by ion gate two arrays of electrodes voltage jump is effectively cancelled out each other.This method reduces its spacing electromagnetic radiation inductive kick by adjusting the amplitude of driving voltage and/or phase on ion gate two arrays of electrodes, and then effectively reduces the inductive kick formed due to ion gate voltage jump on Faraday plate.
Description
Technical field
The present invention relates to ionic migration spectrometer, more particularly to a kind of reduction ionic migration spectrometer ion gate inductive kick
Apparatus and method.
Background technology
Ion mobility spectrometry is that a kind of trace materials examines technology soon, has simple in construction, high sensitivity, detection speed fast, normal
The advantages of depressing work.Ionic migration spectrometer controls charged particle to enter drift with specific pattern by way of switching ion door
Area is moved, is detected after separation by detector.
The on off state of ion gate be typically using ion gate driver adjust ion gate on two-stage pressure difference mode come
Realize：When the current potential on ion gate on two arrays of electrodes is equal, ion gate is opened, and ion is passed through；When on ion gate two
When the current potential of group electrode has certain pressure difference, ion gate is closed, and the ion near ion gate will be got to low on ion gate
In potential electrode group, ion can not pass through.
Inductive kick in ion mobility spectrometry is the impact arteries and veins detected on the detector ion gate voltage jump moment
Punching.Because the voltage on ion gate is high pressure, two arrays of electrodes saltus step pressure difference is very big (generally higher than 80V) on ion gate, is switching
Very big electromagnetic radiation can be produced during saltus step, and larger inductive kick can be detected on the detector, to useful signal
Detection cause greatly to disturb.For Fourier transformation ionic migration spectrometer (FT-IMS), due to instrument have twice from
Cervical orifice of uterus, and second ion gate is very near (typically less than 10mm) from detector distance, and the inductive kick of formation is even more serious,
Even can make useful signal it is annihilated fall.
At present, ion gate is typically controlled using bilateral symmetry, i.e., in shutdown state, one group of electrode is higher by base on ion gate
The certain value of quasi- voltage, and another group of electrode is less than reference voltage identical value.For example, under shutdown state, when ion gate base
When quasi- voltage is 3500V, the voltage on ion gate two arrays of electrodes is respectively 3540V, 3460V.With certain FREQUENCY CONTROL ion
Door switch, with regard to ion stream can be made to pass through in a corresponding manner.This control mode typically uses the side of electric resistance partial pressure from main circuit
Formula realizes that adjustability is poor, it is impossible to asymmetricly changes the relative voltage of two electrode groups of ion gate, it is difficult to by adjusting ion gate
The mode of voltage reduces inductive kick.In addition, ion gate switching moments, the electric field of drift region will be affected, especially
In Fourier transformation ionic migration spectrometer, because ion gate switching frequency is larger, the stability of drift region electric field will be caused
Very big influence.
In practical application, because very big difference, existing ion gate be present in ion gate type of drive and geometry etc.
Type of drive is difficult effectively to weaken inductive kick.
The content of the invention
It is a primary object of the present invention to overcome the deficiencies in the prior art, there is provided one kind reduces ionic migration spectrometer ion gate
The apparatus and method of inductive kick.
To achieve the above object, the present invention uses following technical scheme：
A kind of device for reducing ionic migration spectrometer ion gate inductive kick, including the adjustable ion gate driver of bipolarity,
The adjustable ion gate driver of bipolarity includes signal generator and two direct current adjustable isolation electric powers, and described two direct currents can
Insulating power supply is adjusted respectively to two arrays of electrodes output voltage on ion gate, the signal generator control described two direct currents adjustable every
Phase from power supply to two arrays of electrodes output voltage on ion gate, wherein by adjusting described two direct current adjustable isolation electric powers
Export to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, and/or by adjusting the defeated of the signal generator
Go out to realize the regulation to two arrays of electrodes voltage phase difference on ion gate, so that caused by ion gate two arrays of electrodes voltage jump
Electromagnetic radiation is effectively cancelled out each other, and then effectively reduces the inductive kick formed on Faraday plate.
Further：
The adjustable ion gate driver of bipolarity also includes two groups of optoelectronic switch modules and high_voltage isolation module and two
Group metal-oxide-semiconductor, wherein two groups of metal-oxide-semiconductors are connected with two direct current adjustable isolation electric powers, two groups of metal-oxide-semiconductors include the MOS of two series connection
Pipe, concatenation point is coupled with a two arrays of electrodes for ion gate in the groups of two groups of metal-oxide-semiconductors, the concatenation point between two groups of metal-oxide-semiconductors and two
Concatenation point between direct current adjustable isolation electric power is connected and together meets the reference voltage V ref of ion gate, the signal generator
First output end is connected to two grids of first group of metal-oxide-semiconductor by first group of optoelectronic switch module and high_voltage isolation module, described
Second output end of signal generator is connected to the two of second group of metal-oxide-semiconductor by second group of optoelectronic switch module and high_voltage isolation module
Individual grid.
The signal generator generation two-way amplitude is identical, the impulse wave or square-wave signal of 180 ° of phase difference, uses respectively
In the work for controlling two optoelectronic switch modules, the working conditions of two groups of metal-oxide-semiconductors is controlled under the protection of high_voltage isolation module, from
And make voltage Vo saltus steps between direct current adjustable isolation electric power two-stage output voltage VH, VL of access ion gate.
The ion gate is TP ion gates or BN ion gates.
The ionic migration spectrometer is signal averaging ionic migration spectrometer (SA-IMS) or Fourier transformation ion mobility spectrometry
Instrument (FT-IMS).
It is a kind of reduce ionic migration spectrometer ion gate inductive kick method, using described reduction ionic migration spectrometer from
The device of cervical orifice of uterus inductive kick, adjust the amplitude of driving voltage and/or phase on ion gate two arrays of electrodes and reduce its spatial electromagnetic
Radioinduction impacts.
Further：
Realized by adjusting the output of the direct current adjustable isolation electric power in the adjustable ion gate driver of bipolarity to ion
The regulation of two arrays of electrodes voltage amplitude value difference on door, to compensate the ion caused by ion gate configuration and manufacturing and positioning errors
The difference for the reverse induction impact that door two arrays of electrodes is formed during voltage jump on ionic migration spectrometer Faraday plate.
The phase of the low pressure gate-control signal generated by adjusting the signal generator in the adjustable ion gate driver of bipolarity
To realize the regulation to two arrays of electrodes voltage phase difference on ion gate, with compensation because ion gate configuration and processing and assembling miss
The reverse induction that ion gate two arrays of electrodes caused by difference is formed during voltage jump on ionic migration spectrometer Faraday plate
The difference of impact.
Realized by adjusting the output of the direct current adjustable isolation electric power in the adjustable ion gate driver of bipolarity to ion
The regulation of two arrays of electrodes voltage amplitude value difference on door, and by adjusting the signal generator in the adjustable ion gate driver of bipolarity
The phase of the low pressure gate-control signal of generation realizes the regulation to two arrays of electrodes voltage phase difference on ion gate, come compensate due to from
Ion gate two arrays of electrodes caused by cervical orifice of uterus structure and manufacturing and positioning errors is during voltage jump in ionic migration spectrometer
The difference of the reverse induction impact formed on Faraday plate.
A kind of ionic migration spectrometer, there is the device of described reduction ionic migration spectrometer ion gate inductive kick.
Beneficial effects of the present invention：
For traditional ionic migration spectrometer, due to caused error in the processing of BN ion gates and assembling process, or due to
The distance of TP ion gate two arrays of electrodes distance detectors is unequal, can not using bilateral symmetry switch drive pattern even if causing
Electromagnetic radiation caused by ion gate two arrays of electrodes is effectively cancelled out each other, thus still have larger inductive kick.This hair
Bright difference in magnitude and phase difference by adjusting the voltage on ion gate two arrays of electrodes, it can effectively compensate for because ion gate is processed
Assembling equal error, TP ion gates two arrays of electrodes in tandem, structure two arrays of electrodes caused by asymmetry in itself be present
The difference of electromagnetic radiation be (the reverse induction impact that ion gate two arrays of electrodes is formed during voltage jump on Faraday plate
Difference), reduce the impact of its spacing electromagnetic radiation, be effectively improved because the voltage on ion gate two arrays of electrodes is during saltus step
Energy radiation the problem of can not effectively reducing, and then effectively reduce the inductive kick formed on Faraday plate and its to effective
The annoyance level of signal.
Brief description of the drawings
Fig. 1 is a kind of schematic device for reducing ionic migration spectrometer ion gate inductive kick；
Fig. 2 is SA-IMS structures (BN ion gates) signal for reducing inductive kick using the adjustable ion gate driver of bipolarity
Figure；
Fig. 3 is SA-IMS structures (TP ion gates) signal for reducing inductive kick using the adjustable ion gate driver of bipolarity
Figure；
Fig. 4 is FT-IMS structures (BN ion gates) signal for reducing inductive kick using the adjustable ion gate driver of bipolarity
Figure；
Fig. 5 is FT-IMS structures (TP ion gates) signal for reducing inductive kick using the adjustable ion gate driver of bipolarity
Figure；
Fig. 6 is the electrode voltage of ion gate two caused by bipolar ion gate driver and its caused inductive interference；
Fig. 7 is that the maximum of the respective caused inductive interference of the electrode of ion gate two has the situation schematic diagram of phase difference.
Embodiment
Embodiments of the present invention are elaborated below.It is emphasized that what the description below was merely exemplary,
The scope being not intended to be limiting of the invention and its application.
Refering to Fig. 1, in one embodiment, a kind of device for reducing ionic migration spectrometer ion gate inductive kick, including
Bipolarity is adjustable ion gate driver, the adjustable ion gate driver of bipolarity includes signal generator and two direct currents are adjustable
Insulating power supply 1,2, described two direct current adjustable isolation electric powers 1,2 respectively to two arrays of electrodes output voltage Vo1, Vo2 on ion gate,
The signal generator control two arrays of electrodes output voltage Vo1 on described two 1,2 pair of ion gate of direct current adjustable isolation electric power,
Vo2 phase, wherein being realized by adjusting the output of described two direct current adjustable isolation electric powers 1,2 to two groups of electricity on ion gate
The regulation of pole tension Vo1, Vo2 difference in magnitude, and/or realized by adjusting the output of the signal generator on ion gate two
The regulation of group electrode voltage phase difference, so that electromagnetic radiation caused by ion gate two arrays of electrodes voltage jump is effectively mutually supported
Disappear, and then effectively reduce the inductive kick formed on Faraday plate.
As shown in figure 1, in a preferred embodiment, the adjustable ion gate driver of bipolarity is also opened including two groups of photoelectricity
Module and high_voltage isolation module and two groups of metal-oxide-semiconductors are closed, wherein two groups of metal-oxide-semiconductors and two direct current adjustable isolation electric powers 1,2 are gone here and there
Connection, two groups of metal-oxide-semiconductors include the metal-oxide-semiconductor of two series connection, and two groups of electricity that point is coupled with ion gate are concatenated in the group of two groups of metal-oxide-semiconductors
Pole, the concatenation point between two groups of metal-oxide-semiconductors are connected with the concatenation point between two direct current adjustable isolation electric powers 1,2 and together connect ion
The reference voltage V ref of door, the first output end of the signal generator pass through first group of optoelectronic switch module and high_voltage isolation mould
Block is connected to two grids of first group of metal-oxide-semiconductor, and the second output end of the signal generator passes through second group of optoelectronic switch module
Two grids of second group of metal-oxide-semiconductor are connected to high_voltage isolation module.
In a preferred embodiment, the signal generator produces that two-way amplitude is identical, phase differs 180 ° of impulse wave
Or square-wave signal, it is respectively used to control the work of two optoelectronic switch modules, two groups is controlled under the protection of high_voltage isolation module
The working condition of metal-oxide-semiconductor so that access ion gate voltage Vo direct current adjustable isolation electric power two-stage output voltage VH, VL it
Between saltus step.
In certain embodiments, the ion gate can be TP ion gates or BN ion gates.
In certain embodiments, the ionic migration spectrometer can be the signal averaging using TP ion gates or BN ion gates
Ionic migration spectrometer (SA-IMS) or the Fourier transformation ionic migration spectrometer for using TP ion gates or BN ion gates
(FT-IMS)。
In another embodiment, a kind of method for reducing ionic migration spectrometer ion gate inductive kick, foregoing is used
The device of the reduction ionic migration spectrometer ion gate inductive kick of one embodiment, adjusts driving voltage on ion gate two arrays of electrodes
Amplitude and/or phase reduce its spacing electromagnetic radiation inductive kick.
In the particular embodiment, can be by adjusting the electricity of the direct current adjustable insulating in the adjustable ion gate driver of bipolarity
Source is exported to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, to compensate due to ion gate configuration and processing
With rigging error caused by ion gate two arrays of electrodes formed on ionic migration spectrometer Faraday plate during voltage jump
The difference of reverse induction impact.
In the particular embodiment, can be generated by adjusting the signal generator in the adjustable ion gate driver of bipolarity
The phase of low pressure gate-control signal realize the regulation to two arrays of electrodes voltage phase difference on ion gate, to compensate due to ion gate
Ion gate two arrays of electrodes caused by structure and manufacturing and positioning errors is during voltage jump in ionic migration spectrometer farad
The difference of the reverse induction impact formed on disk.
In the particular embodiment, can be by adjusting the electricity of the direct current adjustable insulating in the adjustable ion gate driver of bipolarity
Source is exported to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, and by adjusting the adjustable ion gate of bipolarity
The phase of the low pressure gate-control signal of signal generator generation in driver is realized to two arrays of electrodes voltage-phase on ion gate
The regulation of difference, to compensate the ion gate two arrays of electrodes caused by ion gate configuration and manufacturing and positioning errors in voltage jump
During formed on ionic migration spectrometer Faraday plate reverse induction impact difference.
In another embodiment, a kind of ionic migration spectrometer, there is the reduction ion mobility spectrometry of foregoing any embodiment
The device of instrument ion gate inductive kick.
The specific embodiment of the invention and its advantage are further described below in conjunction with accompanying drawing.
As shown in fig. 6, the embodiment of the present invention uses bipolar ion door type of drive, i.e., ion gate is from door opening state to pass
When door state switches, one group of electrode positive transition (Fig. 6 (a) part), and another group of electrode negative sense saltus step (Fig. 6 (b) portion
Point), make inductive interference caused by two groups of ion gate electrode saltus step processes obtain neutralizing compensation, reduce inductive interference so as to reach
Purpose.As shown in Fig. 6 (c), (d), (e) part, wherein, Fig. 6 (c) is partly ion gate electrode shown in Fig. 6 (a) part
Inductive kick caused by voltage, Fig. 6 (d) is partly sensing punching caused by ion gate electrode voltage shown in Fig. 6 (b) part
Hit, Fig. 6 (e) is partly the inductive kick after neutralization.
Because the two arrays of electrodes of TP ion gates is in tandem, there is asymmetry in structure, two arrays of electrodes is in farad in itself
The intensity of caused inductive interference and phase can have certain difference on disk；BN ion gates are also due to manufacture and assembling miss
Difference presence and inductive interference can not be made thoroughly to be eliminated.It is each that (a), (b) such as Fig. 7 partially illustrate the electrode of ion gate two
Phase difference be present from the maximum of caused inductive interference.The embodiment of the present invention further utilizes the adjustable ion of bipolarity
Gate driver reduces ion mobility spectrometry inductive kick by adjusting difference in magnitude and/or the phase difference of ion gate drive voltage.It is logical
The difference in magnitude and/or phase difference of the gate voltage on ion gate two arrays of electrodes are overregulated, is filled to improve to process due to BN ion gates
Ion gate two caused by the unequal design feature of distance with equal error and TP ion gate two arrays of electrodes distance detectors
Group electrode on voltage during saltus step energy radiation can not effectively reduce the problem of.
Embodiment 1
The present embodiment predominantly reduces inductive kick using the mode for adjusting ion gate two arrays of electrodes voltage amplitude value difference.
Due to the structure (such as TP ion gates) of ion gate or the presence of manufacturing and positioning errors (such as BN ion gates), ion
The intensity size of caused inductive kick may have differences on each comfortable Faraday plate of two arrays of electrodes on door, so that sensing
Impact can not effectively be cut down.
The present embodiment can use the adjustable ion gate driver of bipolarity as shown in Figure 1, by adjusting ion gate driver
The output voltage of middle regulated power supply come adjust the amplitude of the voltage of ion gate Top electrode (i.e. Fig. 6 (a), (b) part amplitude),
So as to reduce by the intensity differences of two groups of ion gate electrode caused inductive kicks on Faraday plate (i.e. Fig. 6 (c), (d) part
Difference in magnitude), inductive kick is further cut down.
Further, the method for the amplitude of the voltage of two arrays of electrodes is alternatively other on the regulation ion gate in the present embodiment
Regulative mode, such as realize the regulation of voltage magnitude by adjusting the resistance of divider resistance.
Embodiment 2
The present embodiment predominantly reduces inductive kick using the mode for adjusting ion gate two arrays of electrodes voltage phase difference.
Due to the structure (such as TP ion gates) of ion gate or the presence of manufacturing and positioning errors (such as BN ion gates), ion
The phase of caused inductive kick may have differences on each comfortable Faraday plate of two arrays of electrodes on door, so that inductive kick
Can not effectively it be cut down.
The present embodiment can use the adjustable ion gate driver of bipolarity as shown in Figure 1, be produced by Regulate signal generator
The phase difference of raw control low-voltage signal adjusts the phase difference of the voltage of ion gate Top electrode, makes ion gate two arrays of electrodes each
Caused inductive interference is cancelled out each other in most strength, so that inductive kick is effectively cut down.
Further, the method for the phase difference of the voltage of two arrays of electrodes is alternatively it on the regulation ion gate in the present embodiment
His mode.
Embodiment 3
The present embodiment is to be directed to the example for reducing inductive kick using the ionic migration spectrometer of BN ion gates.
The present embodiment can use the adjustable ion gate driver of bipolarity as shown in Figure 1, applied to as shown in Figure 2, Figure 4 shows
BN ion gates.As shown in Figure 2, Figure 4 shows, ion gate reference voltage V ref, access are drawn from the bleeder circuit of ionic migration spectrometer
In bipolarity is adjustable ion gate driver on the concatenation point of two direct current adjustable isolation electric powers, then by the adjustable ion gate of bipolarity
Two output ends in driver are respectively connected to two electrodes of ion gate.
Signal generator generation two-way amplitude is identical, the impulse wave or square-wave signal of 180 ° of phase difference, is respectively used to control
The work of two-way optical-electric module processed, the working condition of two metal-oxide-semiconductors is controlled under the protection of high_voltage isolation module, so that access
The voltage Vo of ion gate saltus steps between direct current adjustable isolation electric power two-stage output voltage VH, VL.By adjusting regulated power supply
Voltage output, you can reach the purpose of the amplitude of regulation ion gate electrode voltage；Low voltage control caused by Regulate signal generator
The phase of signal, you can reach the purpose of the phase of regulation ion gate electrode voltage.
Due to certainly existing certain error in the processing of BN ion gates and assembling process, even if causing to open using bilateral symmetry
Closing drive pattern can not make electromagnetic radiation caused by ion gate two arrays of electrodes effectively cancel out each other, thus there are still larger
Inductive kick.By adjusting the difference in magnitude and phase difference of the voltage on ion gate two arrays of electrodes, can effectively compensate for due to
The difference of two arrays of electrodes electromagnetic radiation caused by ion gate process and assemble equal error, so as to greatly weaken inductive kick.
Embodiment 4
The present embodiment is to be directed to the example for reducing inductive kick using the ionic migration spectrometer of TP ion gates.
The present embodiment can use the adjustable ion gate driver of bipolarity as shown in Figure 1, applied to as shown in Fig. 3, Fig. 5
TP ion gates.As shown in Fig. 3, Fig. 5, for the ionic migration spectrometer of application TP ion gates, ion gate driver is filled also to be bipolar
The adjustable ion gate driver of property.The method of specific reduction inductive kick is similar to Example 3, can be transferred from by adjusting bipolarity
To adjust, two arrays of electrodes on ion gate is each caused to be sensed the output voltage of direct current adjustable isolation electric power in cervical orifice of uterus driver
The intensity of impact, it is each that two arrays of electrodes on ion gate is adjusted by the phase of low-voltage control signal caused by Regulate signal generator
From the phase of caused inductive kick, the purpose for reducing inductive kick is maximized so as to realize.
Embodiment 5
The present embodiment is on a kind of signal averaging ionic migration spectrometer (SA-IMS), and it both can be to use BN ion gates
SA-IMS (as shown in Figure 2) or using TP ion gates SA-IMS (shown in Fig. 3).
The method of specific reduction inductive kick is similar to Example 3, can use the adjustable ion of bipolarity as shown in Figure 1
Gate driver, by adjust the output voltage of the direct current adjustable isolation electric power in the adjustable ion gate driver of bipolarity adjust from
The intensity of the respective caused inductive kick of two arrays of electrodes, passes through low-voltage control signal caused by Regulate signal generator on cervical orifice of uterus
Phase adjusts the phase of the respective caused inductive kick of two arrays of electrodes on ion gate, reduces inductive kick so as to realize to maximize
Purpose.
Embodiment 6
The present embodiment be in a kind of Fourier transformation ionic migration spectrometer (FT-IMS), its both can be using BN from
The FT-IMS (as shown in Figure 4) of the cervical orifice of uterus or FT-IMS (as shown in Figure 5) using TP ion gates.
The method of specific reduction inductive kick is similar to Example 3, can use the adjustable ion of bipolarity as shown in Figure 1
Gate driver, by adjust the output voltage of the direct current adjustable isolation electric power in the adjustable ion gate driver of bipolarity adjust from
The intensity of the respective caused inductive kick of two arrays of electrodes, passes through low-voltage control signal caused by Regulate signal generator on cervical orifice of uterus
Phase adjusts the phase of the respective caused inductive kick of two arrays of electrodes on ion gate, reduces inductive kick so as to realize to maximize
Purpose.
Above content is to combine specific/preferred embodiment further description made for the present invention, it is impossible to is recognized
The specific implementation of the fixed present invention is confined to these explanations.For general technical staff of the technical field of the invention,
Without departing from the inventive concept of the premise, it can also make some replacements or modification to the embodiment that these have been described,
And these are substituted or variant should all be considered as belonging to protection scope of the present invention.
Claims (9)
1. a kind of device for reducing ionic migration spectrometer ion gate inductive kick, it is characterised in that including the adjustable ion of bipolarity
Gate driver, the adjustable ion gate driver of bipolarity includes signal generator and two direct current adjustable isolation electric powers, described
Two direct current adjustable isolation electric powers are described two to two arrays of electrodes output voltage on ion gate, the signal generator control respectively
Direct current adjustable isolation electric power is to the phase of two arrays of electrodes output voltage on ion gate, wherein adjustable by adjusting described two direct currents
The output of insulating power supply is to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, and/or by adjusting the signal
The output of generator is to realize the regulation to two arrays of electrodes voltage phase difference on ion gate, so that ion gate two arrays of electrodes voltage
Spacing electromagnetic radiation is effectively cancelled out each other caused by saltus step, and then effectively reduces the sensing punching formed on Faraday plate
Hit；
The adjustable ion gate driver of bipolarity also includes two groups of optoelectronic switch modules and high_voltage isolation module and two groups
Metal-oxide-semiconductor, wherein two groups of metal-oxide-semiconductors are connected with two direct current adjustable isolation electric powers, two groups of metal-oxide-semiconductors include the metal-oxide-semiconductor of two series connection,
Concatenation point is coupled with a two arrays of electrodes for ion gate in the groups of two groups of metal-oxide-semiconductors, concatenation point and two direct currents between two groups of metal-oxide-semiconductors
Concatenation point between adjustable isolation electric power is connected and together meets the reference voltage V ref of ion gate, and the first of the signal generator
Output end is connected to two grids of first group of metal-oxide-semiconductor, the signal by first group of optoelectronic switch module and high_voltage isolation module
Second output end of generator is connected to two grid of second group of metal-oxide-semiconductor by second group of optoelectronic switch module and high_voltage isolation module
Pole.
2. device as claimed in claim 1, it is characterised in that the signal generator generation two-way amplitude is identical, phase phase
Poor 180 ° of impulse wave or square-wave signal, it is respectively used to control the work of two optoelectronic switch modules, in high_voltage isolation module
The working condition of protection two groups of metal-oxide-semiconductors of lower control, so that the voltage Vo of access ion gate is in direct current adjustable isolation electric power two-stage
Saltus step between output voltage VH, VL.
3. the device as described in any one of claim 1 to 2, it is characterised in that the ion gate is TP ion gates or BN ions
Door.
4. the device as described in any one of claim 1 to 2, it is characterised in that the ionic migration spectrometer be signal averaging from
Sub- mobility spectrometer (SA-IMS) or Fourier transformation ionic migration spectrometer (FT-IMS).
A kind of 5. method for reducing ionic migration spectrometer ion gate inductive kick, it is characterised in that usage right requirement 1 to 4
The device of reduction ionic migration spectrometer ion gate inductive kick described in one, adjusts driving voltage on ion gate two arrays of electrodes
Amplitude and/or phase reduce its spacing electromagnetic radiation inductive kick.
6. according to the method for claim 5, it is characterised in that straight in the adjustable ion gate driver of bipolarity by adjusting
Stream adjustable isolation electric power is exported to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, to compensate due to ion gate
Ion gate two arrays of electrodes caused by structure and manufacturing and positioning errors is during voltage jump in ionic migration spectrometer farad
The difference of the reverse induction impact formed on disk.
7. according to the method for claim 5, it is characterised in that by adjusting the letter in the adjustable ion gate driver of bipolarity
The phase of the low pressure gate-control signal of number generator generation realizes the regulation to two arrays of electrodes voltage phase difference on ion gate, to mend
The ion gate two arrays of electrodes caused by ion gate configuration and manufacturing and positioning errors is repaid during voltage jump in ion
The difference of the reverse induction impact formed on mobility spectrometer Faraday plate.
8. according to the method for claim 5, it is characterised in that：It is straight in the adjustable ion gate driver of bipolarity by adjusting
Stream adjustable isolation electric power is exported to realize the regulation to two arrays of electrodes voltage amplitude value difference on ion gate, and bipolar by adjusting
Property adjustable ion gate driver in the phase of low pressure gate-control signal of signal generator generation realize to two groups on ion gate
The regulation of electrode voltage phase difference, to compensate two groups of electricity of ion gate caused by ion gate configuration and manufacturing and positioning errors
The difference for the reverse induction impact that pole is formed during voltage jump on ionic migration spectrometer Faraday plate.
9. a kind of ionic migration spectrometer, it is characterised in that there is the reduction ion mobility spectrometry described in any one of Claims 1-4
The device of instrument ion gate inductive kick.
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| CN108364847A (en) * | 2018-01-16 | 2018-08-03 | 清华大学深圳研究生院 | A kind of Fourier transformation ionic migration spectrometer of continuous frequency sweep |
| CN110491765B (en) * | 2018-11-25 | 2020-06-19 | 中国科学院大连化学物理研究所 | Control method of ion gate in ion mobility spectrometry |
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