CN208094465U - A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge - Google Patents
A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge Download PDFInfo
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- CN208094465U CN208094465U CN201820252698.XU CN201820252698U CN208094465U CN 208094465 U CN208094465 U CN 208094465U CN 201820252698 U CN201820252698 U CN 201820252698U CN 208094465 U CN208094465 U CN 208094465U
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- voltage pulse
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- rising edge
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- 230000000630 rising effect Effects 0.000 title claims abstract description 36
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- 238000003825 pressing Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 24
- 230000006698 induction Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 8
- 238000001819 mass spectrum Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
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- 230000001276 controlling effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 210000001367 artery Anatomy 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 210000003462 vein Anatomy 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge, belongs to high voltage pulse circuit field.Technical solution：Include the AC-DC power supplys for alternating current to be turned to direct current, 3KVDC high-pressure modulars for exporting high direct voltage, high-voltage MOSFET high-speed switch for exporting high-voltage pulse, the AC-DC power supplys are separately connected the 3KVDC high-pressure modulars and MOSFET high-speed switches, and the 3KVDC high-pressure modulars are connected with the high-voltage MOSFET high-speed switch.Advantageous effect is:The utility model realizes the high-voltage pulse that the impulse amplitude that output pulse width is adjustable, pulse frequency is adjustable, pulse output number can be set continuously adjusts in 0-3000 volt ranges, and the delay time exported between high voltage pulse and trigger signal is fixed.The features such as rising edge for exporting high-voltage pulse was less than for 100 nanoseconds, was fixed as 128 nanoseconds from TTL trigger signals to high voltage pulse rising edge delay time 120 nanosecond of pulse width to 10 microseconds, and the high voltage pulse of output is adjustable from 0-3000 volts.
Description
Technical field
The utility model belongs to high voltage pulse circuit field, more particularly to a kind of with nanosecond order rising edge and decline
Edge can be applied to the various high voltage pulse occasions for needing nanosecond to microsecond level width, including pulse ion reflection, pulse ion
The high voltage pulse circuit that transmission, mass of ion selection door, pulsed electron reflect.
Background technology
Ion is introduced by electron-optical system in flight time mass spectrum, need apply high voltage pulse electric field, make these from
Son accelerates and focuses these ions, is allowed to fly to ion reflections electric field or detector.In order to make these from ion flight time
Ion efficiently separates, and pulse voltage needs 1000-3000 to lie prostrate.
Ion residence time in pulse accelerating field is only one in several microsecond ranges, and overlong time can lead to ion
It is mutually exclusive because of space charge accumulation that spatial distribution is caused to be widened, so as to cause the dispersion on ion flight time, make flight
The mass resolution degradation of time mass spectrum.Therefore the high voltage pulse for needing an amplitude and width that can accurately control.
This high voltage pulse electric field is used not only for accelerating ion flight, is allowed to obtain the initial kinetic energy of flight, and make
The important technical that ion flight time focuses, even if the ion of identical mass-to-charge ratio reaches detector simultaneously, to effectively carry
The signal strength and signal-to-noise ratio of high ion of the same race, therefore the high voltage pulse electric field of high quality is orthogonal acceleration reflection time-of-flight
One of key technology in mass spectrum not only needs high voltage pulse field to have quick rising edge and failing edge, it is also necessary to pulse persistance
Period high pressure amplitude varies less.(fall is less than in the pulse persistance phase for the rising edge of high voltage pulse and the stability of amplitude
10%) be determine orthogonal acceleration reflection time-of-flight mass mass resolution key core, the rising edge of high voltage pulse
Shorter, the amplitude of high voltage pulse is more stable, may more obtain high-resolution flight time mass spectrum.
Enter flight time mass spectrum to high voltage pulse accelerating field is applied from ion, needs accurate time control, pulse
High pressure apply in advance cause ion cannot completely into or do not enter accelerating region, weaken so as to cause ion signal or detect not
It arrives；Applying too late then ion space diverging increasing causes signal resolution to reduce and weaken.This time control needs are received hundreds of
In second range.Therefore it is required that the generation time control accuracy of high voltage pulse is within 100 nanoseconds, and the control of its rising edge exists
In same range.
This high voltage pulse electric field is applied to various linear flight time mass spectrums, orthogonal acceleration reflection time-of-flight matter
In spectrum, coupled plasma flight time mass spectrum etc., the various pulse height for needing nanosecond to microsecond level width can also be widely used in
The occasion of pressure, including pulse ion transmission, mass of ion selection door, pulsed electron reflection are a kind of with wide application prospect
Power source special.
Domestic and international market can not yet purchase the power supply product for meeting above application at present, therefore, develop nanosecond order and rise
It has important practical significance with the high voltage pulse circuit of failing edge.
" a kind of adjustable all solid state high voltage power supply of output pulse multi-parameter " (publication number CN107482944A, publication date
2017.12.15) disclose a kind of adjustable all solid state high voltage power supply of output pulse multi-parameter, pulse width and amplitude have compared with
Big adjustable extent, all solid state high voltage power supply that can export positive negative pulse stuffing can enough substitute boosting in certain applications
Transformer." a kind of high-voltage nanosecond pulse trigger applied to hydrogen thyratron " (publication number CN107257209A, publication date
2017.10.17 a kind of high-voltage nanosecond pulse trigger applied to hydrogen thyratron) is disclosed, hydrogen thyratron filament is integrated with and adds
Heater circuit, the circuital current can be adjusted subtly, while the high pressure of tens of kV is isolated." one kind have sub-micro second-time rise and
The high voltage pulse circuit of failing edge " (Authorization Notice No. CN 206650599 U, authorized announcement date 2017.11.17) provides one
Kind can lie prostrate continuous in range for the high pressure amplitude with sub-micro second-time rising and falling edges of accelerator for neutron production in 0-2500
The high voltage pulse circuit of adjusting realizes the pulse recommended Chopper driving MOSFET conductings and formed using half-bridge driven chopper circuit
High pressure, rising edge and failing edge are no more than 500ns (nanosecond).
Utility model content
In order to obtain it is a kind of it is simple in structure, can meet various capacitives, resistive and inductive load, have nanosecond order rise and
The high voltage pulse circuit that amplitude, frequency and the pulsewidth of failing edge can be adjusted by trigger signal, the utility model proposes a kind of tools
There is the high voltage pulse circuit of nanosecond order rising edge and failing edge.
Technical solution is as follows：
A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge, including be used to alternating current turning direct current
AC-DC power supplys, the 3KVDC high-pressure modulars for exporting high direct voltage, for export high-voltage pulse high-voltage MOSFET high speed
Switch, the AC-DC power supplys are separately connected the 3KVDC high-pressure modulars and MOSFET high-speed switches, the 3KVDC high-pressure modulars
It is connected with the high-voltage MOSFET high-speed switch.
Further, the high-voltage MOSFET high-speed switch is managed by several MOSFET or IGBT passes through series, parallel structure
At.
Further, further include the alternating-current switch for controlling alternating current break-make and the direct current for controlling direct current break-make
Self-lock switch, the alternating-current switch are set on AC-DC power circuits, and the direct current self-lock switch is set to the AC-DC electricity
On circuit between source circuit and the 3KVDC high-pressure modulars.
Further, further include for the VRM Voltage Regulator Module to the progress voltage adjusting of 3KVDC high-pressure modulars, the voltage
Adjustment module is set on the 3KVDC high-pressure modulars peripheral circuit.
Further, further include partial pressure type D.C. voltmeter for measuring voltage, the partial pressure type D.C. voltmeter is set
It is placed on the circuit between the 3KVDC high-pressure modulars and the MOSFET high-speed switches.
Further, further include Voltage stabilizing module for stable high voltage direct current and load voltage, the Voltage stabilizing module setting
In on the MOSFET high-speed switches peripheral circuit.
Further, further include filter circuit module for filtering, the filter circuit module is set to the AC-
On circuit between DC power supply and the MOSFET high-speed switches.
Further, further include high power load resistance, the high power load resistance is set to the MOSFET high speeds
It switchs on peripheral circuit.
The utility model has the beneficial effects that：
High voltage pulse circuit described in the utility model with nanosecond order rising edge and failing edge realizes output arteries and veins
The impulse amplitude that width is adjustable, pulse frequency is adjustable, pulse output number can be set is rushed to continuously adjust in 0-3000 volt ranges
High-voltage pulse, the delay time exported between high voltage pulse and trigger signal fixes.The rising edge of output high-voltage pulse is less than
100 nanoseconds, 120 nanosecond of pulse width to 10 microseconds are fixed as from TTL trigger signals to high voltage pulse rising edge delay time
The features such as 128 nanoseconds, the high voltage pulse of output is adjustable from 0-3000 volts.It can be applied to various need nanosecond wide to Microsecond grade
The occasion of the high voltage pulse of degree, such as pulse ion reflection, pulse ion transmission, mass of ion selection door, pulsed electron reflection
Occasion is a kind of power source special with wide application prospect.
Description of the drawings
Fig. 1 is the high voltage pulse circuit that the utility model has nanosecond order rising and falling edges；
Fig. 2 be the trigger signal width obtained with the utility model be 120 nanosecond clock pulse leap high pressure sensitivity induction signal oscillogram
One；
Fig. 3 be the trigger signal width obtained with the utility model be 120 nanosecond clock pulse leap high pressure sensitivity induction signal oscillogram
Two；
Fig. 4 be the trigger signal width obtained with the utility model be 600 nanosecond clock pulse leap high pressure sensitivity induction signal oscillogram
One；
Fig. 5 be the trigger signal width obtained with the utility model be 600 nanosecond clock pulse leap high pressure sensitivity induction signal oscillogram
Two；
Fig. 6 is that the trigger signal width obtained with the utility model is that 5.0 microsecond clock pulses are leapt high pressure sensitivity induction signal oscillogram
One；
Fig. 7 is that the trigger signal width obtained with the utility model is that 5.0 microsecond clock pulses are leapt high pressure sensitivity induction signal oscillogram
Two.
Specific implementation mode
1-7 does furtherly the high voltage pulse circuit with nanosecond order rising edge and failing edge below in conjunction with the accompanying drawings
It is bright.
Embodiment 1
A kind of high voltage pulse circuit with nanosecond order rising and falling edges, including AC-DC power supplys, 3KVDC high pressing molds
Block, high-voltage MOSFET high-speed switch (HTS).The AC-DC power supplys turn direct current, the 3KVDC high pressing molds for alternating current
Block exports high direct voltage, and the high-voltage MOSFET high-speed switch (HTS) is for exporting high-voltage pulse.
The tool that the high-voltage MOSFET high-speed switch (HTS) is made up of a large amount of MOSFET pipes series, parallel
There are low conduction impedance, the high high pressure resistant high-speed switch for ending impedance.The triggering for providing DC power supply and Transistor-Transistor Logic level is needed to believe
Number switch control signal.Preferably, behlke HTS 31-05- may be used in the high-voltage MOSFET high-speed switch (HTS)
C high-voltage switch gears.
The high-voltage MOSFET high-speed switch (HTS) is for exporting high-voltage pulse.It is practical in circuit when exporting high-voltage pulse
On be heavy-current discharge process, in order to obtain smooth high voltage pulse square-wave signal as far as possible, need high speed to high-voltage MOSFET
It switchs (HTS) and high power capacity voltage stabilizing ability is provided, to meet the heavy-current discharge in given pulse width, this is but also this practicality is new
Type can both be operated in fixed pulse width pulse triggering pattern, can also be operated in train of pulse triggering pattern (burst patterns,
The operating mode of multiple-pulse in unit interval).
The high-voltage pulse rising edge of output can reach within 100 nanoseconds, and pulse amplitude can reach 3000 volts, most short
Pulse width reached for 120 nanoseconds, and delay time is fixed between high-voltage pulse rising edge and trigger signal.
Embodiment 2
A kind of high voltage pulse circuit with nanosecond order rising and falling edges, including AC-DC power supplys, 3KVDC high pressing molds
Block, high-voltage MOSFET high-speed switch (HTS).The AC-DC power supplys turn direct current for alternating current；The 3KVDC high pressing molds
Block exports 0-3000V high direct voltages；The high-voltage MOSFET high-speed switch (HTS) is by a large amount of for exporting high voltage pulse
MOSFET or IGBT are by series, parallel, and by the layout composition of compact, low sense, have high reliability and excellent
Switch performance, while controlling the full isolation of driving circuit and switching circuit, ensure that switch can be used for high-end switch,
It can be used for low-end switch, can be also used for the push-pull circuit of two high-voltage switch gears composition.
The 0-3000 volt High voltage outputs of DC high-voltage power supply 3KVDC are opened by high-voltage MOSFET high speed in the utility model
After closing (HTS) conducting, to form rising edge at the both ends load RL and lie prostrate high-voltage pulse less than the 0-3000 of 100 nanoseconds, it is necessary to pass through
RL high currents, repid discharge are loaded, the DC circuit to give high-voltage MOSFET high-speed switch (HTS) to provide high pressure proposes very
High request.To prevent interference feedback to the interference of TTL trigger signals, need to provide filtering (C1) for trigger signal；In order to the greatest extent may be used
Smooth high voltage pulse square-wave signal can be obtained, needs to provide high power capacity to high-voltage MOSFET high-speed switch (HTS) and load RL
Voltage stabilizing ability (C2, C3), to meet the heavy-current discharge in given pulse width；This was but also the utility model both can be with work
Make to trigger pattern in the pulse of fixed pulse width, train of pulse triggering pattern (burst patterns, in the unit interval can also be operated in
The operating mode of multiple-pulse).By controlling the width of trigger signal, the output time of FREQUENCY CONTROL high-voltage pulse, width.
Embodiment 3
AC-DC is the switch power module of alternating current-direct current conversion in Fig. 1.K1, K2 are respectively alternating-current switch and direct current
Self-lock switch controls alternating current and direct current respectively；3KVDC is that 0-3000 lies prostrate DC-DC high-pressure modular；R1 is 3KVDC moulds
The voltage regulating part of block point；V is partial pressure type D.C. voltmeter；C1, C2, C3 are respectively TTL trigger signals, high voltage direct current and negative
Carry voltage stabilizing, the filter circuit of voltage；HTS is high-voltage MOSFET high-speed switch；RL is high power load resistance；Gnd is ground connection
End；Trin is 50 ohm of Transistor-Transistor Logic level trigger signal input terminals；Vp is coaxial output line (the 50 Ohm transmissions spy of high voltage pulse
Property).
As shown in Figures 2 and 3, which is the arteries and veins generated when DC voltage is 200 volts, TTL signal width was 120 nanosecond
Pressure sensitivity of leaping high induction signal oscillogram.The oscillogram is obtained using coil induction type mensuration and (measures high-voltage pulse with this method
Rising edge and failing edge can observe many oscillator signals, this is that inductive measuring itself is brought, and not be true high-tension pulse
Punching).The high-voltage pulse width of output was about 140 nanoseconds, and rising edge (half eminence) is the delay of 12 nanoseconds and TTL trigger signals
Time was 128 nanoseconds.
As shown in Figure 4 and Figure 5, which is the arteries and veins generated when DC voltage is 200 volts, TTL signal width was 600 nanosecond
Pressure sensitivity of leaping high induction signal oscillogram is obtained using coil induction type mensuration.The Pulse High Voltage width of output is about 630 to receive
Second, rising edge (half amplitude) was 12 nanoseconds and trigger signal delay was 128 nanoseconds.
As shown in Figure 6 and Figure 7, which is the pulse generated when DC voltage is 200 volts, TTL signal width is 5 microsecond
High voltage induction signal waveforms are obtained using coil induction type mensuration.The Pulse High Voltage width of output is about 5.024 micro-
Second, rising edge (half amplitude) was 8 nanoseconds and trigger signal delay was 128 nanoseconds, in the high-voltage pulse of 5.024 microseconds, width
Value is declined slightly (about 5%).It is appropriate to adjust DC voltage-stabilizing parameter, high voltage pulse side broader, that decline is gentler can be obtained
Wave.
The preferable specific implementation mode of the above, only the utility model, but the scope of protection of the utility model is not
It is confined to this, any one skilled in the art is in the technical scope that the utility model discloses, according to this practicality
Novel technical solution and its utility model design are subject to equivalent substitution or change, should all cover the protection model in the utility model
Within enclosing.
Claims (8)
1. a kind of high voltage pulse circuit with nanosecond order rising edge and failing edge, which is characterized in that including being used to exchange
Electricity turns the AC-DC power supplys of direct current, the 3KVDC high-pressure modulars for exporting high direct voltage, the high pressure for exporting high-voltage pulse
MOSFET high-speed switches, the AC-DC power supplys are separately connected the 3KVDC high-pressure modulars and MOSFET high-speed switches, described
3KVDC high-pressure modulars are connected with the high-voltage MOSFET high-speed switch.
2. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that institute
State that high-voltage MOSFET high-speed switch is managed by several MOSFET or IGBT is made up of series, parallel.
3. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that also
Include the alternating-current switch for controlling alternating current break-make and the direct current self-lock switch for controlling direct current break-make, the exchange is opened
Pass is set on AC-DC power circuits, and the direct current self-lock switch is set to the AC-DC power circuits and the 3KVDC high
On circuit between die block.
4. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that also
Include the VRM Voltage Regulator Module for carrying out voltage adjusting to 3KVDC high-pressure modulars, the VRM Voltage Regulator Module is set to described
On 3KVDC high-pressure modular peripheral circuits.
5. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that also
Include the partial pressure type D.C. voltmeter for measuring voltage, the partial pressure type D.C. voltmeter is set to the 3KVDC high pressing molds
On circuit between block and the MOSFET high-speed switches.
6. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that also
Include the Voltage stabilizing module for stable high voltage direct current and load voltage, the Voltage stabilizing module is set to the MOSFET high-speed switches
On peripheral circuit.
7. the high voltage pulse circuit with nanosecond order rising edge and failing edge as described in claim 1, which is characterized in that also
Include the filter circuit module for filtering, the filter circuit module is set to the AC-DC power supplys and the MOSFET high
On circuit between speed switch.
8. special as claim 1-7 any one of them has the high voltage pulse circuit of nanosecond order rising edge and failing edge
Sign is, further includes high power load resistance, and the high power load resistance is set to MOSFET high-speed switches periphery electricity
On the road.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820252698.XU CN208094465U (en) | 2018-02-12 | 2018-02-12 | A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820252698.XU CN208094465U (en) | 2018-02-12 | 2018-02-12 | A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208094465U true CN208094465U (en) | 2018-11-13 |
Family
ID=64064622
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820252698.XU Expired - Fee Related CN208094465U (en) | 2018-02-12 | 2018-02-12 | A kind of high voltage pulse circuit with nanosecond order rising edge and failing edge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208094465U (en) |
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2018
- 2018-02-12 CN CN201820252698.XU patent/CN208094465U/en not_active Expired - Fee Related
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Granted publication date: 20181113 Termination date: 20200212 |
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| CF01 | Termination of patent right due to non-payment of annual fee |