CN106086796A - A kind of cubic structure MgZnO film and preparation method thereof - Google Patents
A kind of cubic structure MgZnO film and preparation method thereof Download PDFInfo
- Publication number
- CN106086796A CN106086796A CN201610387144.6A CN201610387144A CN106086796A CN 106086796 A CN106086796 A CN 106086796A CN 201610387144 A CN201610387144 A CN 201610387144A CN 106086796 A CN106086796 A CN 106086796A
- Authority
- CN
- China
- Prior art keywords
- mgzno
- substrate
- film
- preparation
- cubic structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Abstract
The present invention relates to semi-conducting material preparation field, it is provided that the preparation method of a kind of cubic structure MgZnO film, comprise the steps: to prepare Mg0.5Zn0.5O target；Place the substrate in cavity, heat described substrate to 700 DEG C, be passed through oxygen to control described chamber pressure, then use described target, carry out pulsed deposition over the substrate, it is thus achieved that cubic structure (111) orientation MgZnO film；Described substrate is (111) oriented single crystal MgO substrate.Present invention also offers a kind of cubic structure MgZnO film, the preparation method described in employing is made.The present invention utilizes pulsed laser deposition (PLD) technology, uses Mg0.5Zn0.5O ceramic target prepares Emission in Cubic MgZnO film, by growth temperature, oxygen pressure and the accurate control of oxygen flow, achieve the growth of high-quality (111) orientation cubic MgZnO thin film, provide convenient effective means for preparing different orientation high-quality MgZnO based multicomponent alloy thin film.
Description
Technical field
The invention belongs to photoelectric semiconductor material preparation field, be specifically related to a kind of cubic structure (111) orientation MgZnO thin
Film and preparation method thereof.
Background technology
MgZnO film band gap adjustable extent wider (3.37-7.8eV), can apply to 370-160nm scope in principle
The fields such as interior ultraviolet light photo device.Due to Zn2+Ion and Mg2+Ionic radius closely, Mg or Zn institute in MgZnO material
Being mixed into of son will not introduce the biggest distortion of lattice, and therefore in principle, MgZnO film can obtain higher quality.Additionally, due to
MgZnO film material also has that growth temperature is low, and radiation resistance is higher, and abundant raw material, and low cost is pollution-free, and heat is steady
The qualitative inherent advantage such as good, MgZnO is suitable for making solar blind UV solid violet external detector.
As wanted to realize high-performance solar blind UV detector, first have to realize the growth of high quality cubic MgZnO film
Orientation and effective control of growth quality.The conventional cubic structure semi-conducting material for photoelectric device has (100) and (111)
Two kinds of orientations, the material surface atomic density that wherein (100) are orientated is low, and nonpolar, surface is more stable, photoelectronic mobility
Higher, it is suitable for doing high speed photodetector part.(111) the material surface atomic density being orientated is high, polarized, and surface ratio is relatively active,
Light for irradiating has gain characteristic, is suitable for doing the light-detecting device of large gain, high-responsivity.And for different materials,
The difference of the orientation of growth can cause the difference of growth quality, it is therefore desirable to prepares the high quality cubic MgZnO film of different orientation,
Then the application on ultraviolet light photo device of the different orientation cubic MgZnO thin film could be carried out systematic research work.But it is existing
In the stage, the research of this respect extremely lacks, owing on the one hand the control of growth structure, the orientation of growth and the quality of thin-film material be subject to
To the impact of substrat structure, orientation and surface atom arrangement, the change of growth conditions has great shadow to substrate surface atomic structure
Ringing, therefore want to obtain single structure, single-orientated MgZnO film, not only substrat structure and orientation to be chosen properly, also want
By the atomic building choosing accurately control substrate surface of growth conditions, MgZnO film could be along the structure of substrate and orientation
Growth, the MgZnO growth of other structures and orientation just can be effectively suppressed, and the quality of MgZnO could effectively improve, another
Aspect, the growth structure of thin-film material and orientation also suffer from the impact of reaction of atomic migration energy, different structure, different orientation
MgZnO film is the most different to the requirement of reaction of atomic migration energy, takes according to the growth of MgZnO film in necessary for growth
To accurately controlling the migration energy of reaction of atomic with structure, MgZnO film could be according to the structure of substrate and oriented growth, other knots
The MgZnO growth of structure and orientation just can be effectively suppressed, and the quality of MgZnO film could be higher, but present stage this respect grinds
The report studying carefully work is fewer.
Preparation MgZnO film mainly has PLD (pulsed laser deposition) technology, magnetron sputtering, MBE (outside molecular beam at present
Prolong), the method such as MOCVD (metal organic chemical vapor deposition).2003, year Univ Maryland-Coll Park USA and research laboratory of army
Yang et al. SrTiO3Cushion is to overcome between Si and MgZnO thermal expansion mismatch, heteroepitaxial growth cubic structure between lattice
Mg0.68Zn0.32O thin film.But report does not utilizes PLD method to prepare the different orientation of growth afterwards, crystalline quality preferably stands
Square structure MgZnO film.
Summary of the invention
The present invention provides a kind of high quality cubic structure MgZnO film and preparation method thereof, it is intended to solve in prior art
The quality problems of different orientation cubic structure MgZnO film.
The present invention is achieved in that the preparation method providing a kind of cubic structure MgZnO film, and it includes walking as follows
Rapid:
Preparation Mg0.5Zn0.5O target；
Place the substrate in cavity, heat described substrate to 700 DEG C, be passed through oxygen to control described chamber pressure, then
Use described target, carry out pulsed deposition over the substrate, it is thus achieved that cubic structure (111) orientation MgZnO film；Described substrate
For (111) oriented single crystal MgO substrate.
Present invention also offers a kind of cubic structure MgZnO film, use above-mentioned preparation method to make.
Beneficial effect: the preparation method of the cubic structure MgZnO film that the present invention provides, it utilizes pulsed laser deposition
(PLD) technology, uses Mg0.5Zn0.5O ceramic target prepares Emission in Cubic MgZnO film, by growth temperature, oxygen pressure and oxygen
The accurate control of flow, it is achieved that the growth of high-quality (111) orientation cubic MgZnO thin film, for preparing different orientation high-quality
MgZnO based multicomponent alloy thin film provides convenient effective means.
Accompanying drawing explanation
Fig. 1 be the embodiment of the present invention 1 high temperature high oxygen pressure hyperoxia flow condition under in quartz substrate, (111) and (200) are single
The normalization X-ray diffractogram of the MgZnO film obtained on brilliant MgO substrate；
Fig. 2 be the embodiment of the present invention 1 high temperature high oxygen pressure hyperoxia flow condition under on (111) MgO substrate obtain
The high-resolution X-ray diffractogram of MgZnO film；
Fig. 3 be the embodiment of the present invention 1 high temperature high oxygen pressure hyperoxia flow condition under on (111) MgO substrate obtain
The high-resolution X-ray twin crystal of MgZnO film waves (XRC) curve；
The MgZnO that the hypothermia and hypoxia of Fig. 4 embodiment of the present invention 1 obtains under the conditions of forcing down oxygen flow on (200) MgO substrate
Atomic force (AFM) photo of thin film；
The MgZnO obtained on (111) MgO substrate under the high temperature high oxygen pressure hyperoxia flow condition of Fig. 5 embodiment of the present invention 1
The absorption spectrum under ultraviolet-visible light of thin film；
Fig. 6 be the embodiment of the present invention 1 high temperature high oxygen pressure hyperoxia flow condition under on (111) MgO substrate obtain
MgZnO film photon energy under ultraviolet-visible light and square (ahv) of absorptance product2Change with photon energy hv
Change curve；
Fig. 7 be the embodiment of the present invention 1 high temperature high oxygen pressure hyperoxia flow condition under on (111) MgO substrate obtain
The x-ray photoelectron power spectrum of MgZnO film.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, right
The present invention is described in further detail.Should be appreciated that specific embodiment described herein only in order to explain the present invention, not
For limiting the present invention.
Preparing cubic structure (111) orientation MgZnO film according to technical scheme, process is as follows:
S01: preparation Mg0.5Zn0.5O target；
S02: place the substrate in cavity, heats described substrate to 700 DEG C, is passed through the oxygen that flow is 50sccm, makes chamber
Body pressure, at 8Pa, then uses Mg0.5Zn0.5O target, carries out pulsed deposition over the substrate, it is thus achieved that cubic structure (111)
Orientation MgZnO film.
Specifically, the commercially available acquisition of target described in step S01 or prepared by prior art, in step S02, institute
That states monocrystalline MgO substrate is oriented to (111).
Step S02, specifically, substrate cuts into 15 × 20cm size, is positioned over PLD equipment growth room after over cleaning
In.Target holder is put into described Mg0.5Zn0.5O target, as source material, places the substrate after cleaning at distance target dead ahead,
By the substrate torr regulation base target spacing of mobile substrate, make substrate can regulate in the range of 50～90mm with the spacing of target,
Heat described substrate to 700 DEG C.The heating of described substrate can heat substrate by stove silk, it is achieved can provide the underlayer temperature to be
The accurate temperature of room temperature to 750 DEG C controls.Before growth, substrate is preheated；During growth, regulation underlayer temperature is 700 DEG C,
Open baffle plate between laser instrument and base target to deposit；Baffle plate between laser instrument and base target is closed after growing 100～140 minutes,
It is down to room temperature, takes out sample.Growth course is carried out under conditions of change oxygen pneumatic.For realizing the tune of real oxygen pneumatic
Joint, prevent the impact of other gases, evacuation under mechanical pump and molecular pump effect, the back end vacuum of growth room can reach～
5×10-4Pa.Using high purity oxygen gas (99.9999%) as growth gasses, in order to regulate oxygen flow, can be 0 with two-way range
～the flow-control of 50sccm and 0～200sccm.Described high purity oxygen gas enter before operating room cavity by a high tension unit from
Change.The high purity oxygen gas being ionized device ionization is introduced vacuum reaction chamber, by regulation oxygen flow to 50sccm, by growth room
Internal gas pressure controls at 8Pa, makes thin film grow under different operating pressures respectively.Lambda Physics company of Germany is used to enter
The COMPexPro 220KrF excimer laser of mouth is LASER Light Source, and optical maser wavelength 248nm, pulsewidth 20ns, pulse energy can
Excursion: 0～700mJ, pulse frequency: 0～50Hz.Preferably, during growth, laser energy is fixed on 250～350mJ.
Pulsed laser deposition technique is ablation target under certain laser power and laser spot size, now, Mg, Zn, O
Atom can depart from target, carry out recrystallization film forming with certain speed arrival substrate surface, grows MgZnO film.Thin at photoelectron
In membrane material, the cubic structure semiconductor film material crystalline quality that (111) are orientated is higher, is more beneficial for high-performance optical electronics device
The preparation of part.In terms of the preparation of cubic structure MgO film, the MgO film that (111) are orientated needs under higher temperature conditions
Preparation.For MgZnO alloy film material, too high growth temperature can strengthen horizontal thermophoresis in MgZnO film, occurs
Hexagonal structure MgZnO, is unfavorable for growth and the raising of film quality of cubic structure (111) MgZnO film, if but to obtain
High-quality thin-film material, growth temperature can't be the lowest.
The preparation method of cubic structure (111) the orientation MgZnO film of the present invention, is the feature utilizing O vapour pressure higher,
Make MgZnO film growth be in relatively hyperbar by growth regulation parameter, environment that oxygen flow is bigger, now due to Mg, Zn,
The collision probability that O atom receives oxygen during substrate motion is higher, migrates energy relatively low, it is impossible to move to when arriving substrate
Reaction of atomic is migrated higher (200) the orientation cubic MgZnO surface of energy requirement and six sides (0002) surface, can only move to
Reaction of atomic is migrated (111) orientation cubic MgZnO surface that energy requirement is relatively low, therefore in relatively hyperbar, oxygen element abundance
In the environment of comparatively facilitate (111) orientation cubic MgZnO thin film growth.Use the monocrystalline MgO lining that (111) are orientated simultaneously
The end, substrate surface is stronger with the reaction of oxygen at a higher temperature, and substrate surface is covered by O atom completely, and atom
Arrangement fully according to the surface arrangement form of (111) MgO, at relatively low reactive ion migration energy and oxygen-enriched substrate surface,
(200) cubic MgZnO being orientated and the growth of the MgZnO of hexagonal structure are suppressed, and MgZnO is only in cubic structure
(111) oriented growth, therefore MgZnO film crystalline quality is higher.If using (200) MgO single crystalline substrate with this understanding, from
Although Fig. 1 can be seen that MgZnO film edge (111) oriented growth, but film quality being poor.
Concrete regulation obtains the method for anoxia and oxygen-enriched atmosphere (evacuation, reality also can use and be passed through in the present invention
Noble gas etc.), oxygen flow, ceramic target kind, laser parameter, underlayer temperature, the parameter such as growth time, the present invention is just
By the different adjustment of relevant parameter each in MgZnO film preparation process and coordination are controlled, just obtain the technology of the present invention
Effect.
It should be noted that, the preparation that the method for the present invention is high-quality polynary cubic structure sull provides one
New thinking, i.e. utilize difference growth air pressure, the change of deposition and atomic migration energy under the conditions of oxygen flow etc., it is achieved thin film material
The material orientation of growth and effective control of growth structure, can obtain high quality oxide alloy on the substrate of suitable atomic building
Thin-film material, it is possible to reference to being applied to non-oxidized substance thin film, such as multi-component nitride films.
Below in conjunction with specific embodiment, technical scheme is described in detail.
Embodiment 1
Cleaned monocrystalline (111) MgO substrate is put on cavity specimen holder, first cavity is extracted into 5.0 × 10-4The back of the body of Pa
End vacuum, underlayer temperature rises to 700 DEG C of pretreatment 30min, then grows.By changing oxygen flow, make oxygen stream
Amount is fixed on 50sccm.In growth course, laser energy and laser frequency are fixed to 300mJ, 5Hz, and underlayer temperature keeps
At 700 DEG C, growth time is 120min, and by extracting the amount of cavity gas in adjusting the unit interval out, makes oxygen pressure fix
At 8Pa.It is down to room temperature and takes out sample.
The present embodiment under the conditions of high temperature high oxygen pressure high oxygen flow rate, in quartz substrate preparation MgZnO film edge
(111) orientation preferential growth, on monocrystalline (200) substrate, the MgZnO film of preparation is along (200) oriented growth, but second-rate.
On monocrystalline (111) substrate, the MgZnO film of preparation only edge (111) oriented growth (such as Fig. 1) is on monocrystalline (111) MgO substrate
X-ray diffraction peak narrower (Fig. 2) display of (111) MgZnO of preparation.Fig. 3 is the high temperature high oxygen pressure hyperoxia of the embodiment of the present invention
Under the conditions of throughput, on monocrystalline (111) MgO substrate, the high-resolution X-ray twin crystal of the MgZnO film of preparation waves (XRC) song
Line, it can be seen that the halfwidth of XRC curve only has 199aresec, the quality of MgZnO film is higher.
Under the conditions of Fig. 4 is the high temperature high oxygen pressure high oxygen flow rate obtained in the present embodiment, on monocrystalline (111) MgO substrate
Atomic force (AFM) photo of MgZnO film of preparation, roughness of film only has 4.5nm, and film surface is more smooth.
Absorption spectrum (Fig. 5) display of MgZnO film, the ABSORPTION EDGE of thin film is about at 255nm.Fig. 6 is the height obtained in the present embodiment
Under the conditions of temperature high oxygen pressure high oxygen flow rate, light under the ultraviolet-visible light of the MgZnO film of preparation on monocrystalline (111) MgO substrate
Sub-energy and square (ahv) of absorptance product2With the change curve of photon energy hv, MgZnO film can be obtained from figure
Optical energy gap is about 4.95eV.X-ray photoelectron power spectrum (Fig. 7) is analyzed the relative of Mg with Zn of the film sample obtained and is contained
Amount is about 75.8% and 24.2%.
By in the present embodiment it will be seen that under the conditions of higher temperature, oxygen pressure and oxygen flow, single in (111)
High quality cubic structure (111) MgZnO film can be prepared by pulsed laser deposition method on brilliant MgO substrate.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any amendment, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (8)
1. the preparation method of a cubic structure MgZnO film, it is characterised in that comprise the steps:
Preparation Mg0.5Zn0.5O target；
Place the substrate in cavity, heat described substrate to 700 DEG C, be passed through oxygen to control described chamber pressure, then use
Described target, carries out pulsed deposition over the substrate, it is thus achieved that cubic structure (111) orientation MgZnO film；Described substrate is
(111) oriented single crystal MgO substrate.
2. preparation method as claimed in claim 1, it is characterised in that described in be passed through oxygen to control described chamber pressure be logical
Entering oxygen flow is 40-70sccm, and the pressure making described cavity is 6-10Pa.
3. the preparation method of cubic structure MgZnO film as claimed in claim 1, it is characterised in that described oxygen is high-purity
Oxygen.
4. the preparation method of cubic structure MgZnO film as claimed in claim 1, it is characterised in that described substrate and target
Distance be 50～90mm.
5. the preparation method of cubic structure MgZnO film as claimed in claim 1, it is characterised in that described pulsed deposition
Time is 100～140min.
6. the preparation method of cubic structure MgZnO film as claimed in claim 1, it is characterised in that described pulsed deposition
Laser energy is 250～350mJ.
7. the preparation method of cubic structure MgZnO film as claimed in claim 1, it is characterised in that described in place the substrate into
After in cavity, before heating substrate, also include the step to cavity evacuation.
8. a cubic structure MgZnO film, it is characterised in that use the preparation method described in claim 1～7 any one
Make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610387144.6A CN106086796A (en) | 2016-06-01 | 2016-06-01 | A kind of cubic structure MgZnO film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610387144.6A CN106086796A (en) | 2016-06-01 | 2016-06-01 | A kind of cubic structure MgZnO film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106086796A true CN106086796A (en) | 2016-11-09 |
Family
ID=57448541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610387144.6A Pending CN106086796A (en) | 2016-06-01 | 2016-06-01 | A kind of cubic structure MgZnO film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106086796A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116254509A (en) * | 2021-12-10 | 2023-06-13 | 长春理工大学 | Preparation of MgZnO film by electron beam evaporation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120181531A1 (en) * | 2007-08-08 | 2012-07-19 | Rohm Co., Ltd | Semiconductor element and manufacturing method of the same |
| CN103205706A (en) * | 2013-03-08 | 2013-07-17 | 深圳大学 | Production method of cubic MgZnO film |
| CN103346198A (en) * | 2013-07-16 | 2013-10-09 | 中国科学院物理研究所 | Ultraviolet detector and preparation method thereof |
-
2016
- 2016-06-01 CN CN201610387144.6A patent/CN106086796A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120181531A1 (en) * | 2007-08-08 | 2012-07-19 | Rohm Co., Ltd | Semiconductor element and manufacturing method of the same |
| CN103205706A (en) * | 2013-03-08 | 2013-07-17 | 深圳大学 | Production method of cubic MgZnO film |
| CN103346198A (en) * | 2013-07-16 | 2013-10-09 | 中国科学院物理研究所 | Ultraviolet detector and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 彭赛等: ""生长温度对立方MgZnO 薄膜生长取向和紫外光吸收特性的影响"", 《发光学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116254509A (en) * | 2021-12-10 | 2023-06-13 | 长春理工大学 | Preparation of MgZnO film by electron beam evaporation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103205706B (en) | A kind of preparation method of cubic structure MgZnO film | |
| Seki et al. | Room‐temperature growth of AlN thin films by laser ablation | |
| EP0659911A1 (en) | Method to form a polycrystalline film on a substrate | |
| CN107881472A (en) | A kind of CsPbI3The preparation method of film | |
| CN111020487B (en) | Method for preparing film of quasi-one-dimensional structure material with controllable orientation | |
| CN112647130B (en) | Method for growing gallium oxide film by low-pressure chemical vapor deposition | |
| CN105925938B (en) | A kind of Cs2SnI6The pulsed laser deposition preparation method of film | |
| JP3439994B2 (en) | Method for synthesizing low-resistance n-type and low-resistance p-type single-crystal AlN thin films | |
| JP2003137692A (en) | Natural superlattice homologous single crystal thin film and method of manufacturing the same | |
| CN105777800A (en) | Method for preparing organic perovskite methyl amino lead iodide film through lead oxide film | |
| CN108511324A (en) | A kind of epitaxial growth method of γ phases InSe nanometer piece | |
| CN102031487A (en) | Hexagonal MgZnO film with high magnesium content and preparation method thereof | |
| CN101017864A (en) | Silicon base covariant underlay with the ultrathin carbon silicon middle layer and its preparing method | |
| CN104451600B (en) | Preparation method of bismuth oxide thin film material | |
| CN106086796A (en) | A kind of cubic structure MgZnO film and preparation method thereof | |
| CN110767811A (en) | Photoelectric detector of methylamine lead iodoperovskite single crystal nanowire and preparation method | |
| CN105951045A (en) | Cubic-structured MgZnO film and preparation method thereof, ultraviolet detector and preparation method thereof | |
| CN111807405B (en) | Preparation method of high-crystallization-quality pure-phase cuprous oxide film | |
| JP2009013028A (en) | Aluminum oxide-gallium oxide solid solution and method for producing the same | |
| CN102070129B (en) | Method for preparing cadmium selenide nanometer wire | |
| JPH04292499A (en) | Production of silicon carbide single crystal | |
| JP2000178713A (en) | FORMATION OF beta-MONOIRON DISILICIDE THIN FILM | |
| CN102030327A (en) | Method for preparing silicon nano-wire by pulsed laser ablation | |
| CN109023296A (en) | A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate | |
| CN114566566A (en) | Aluminum nitride solar blind photoelectric detector and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161109 |