CN106062923A - Process for producing bonded soi wafer - Google Patents
Process for producing bonded soi wafer Download PDFInfo
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- CN106062923A CN106062923A CN201580011152.4A CN201580011152A CN106062923A CN 106062923 A CN106062923 A CN 106062923A CN 201580011152 A CN201580011152 A CN 201580011152A CN 106062923 A CN106062923 A CN 106062923A
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- wafer
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- heat treatment
- soi wafer
- film thickness
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000008569 process Effects 0.000 title abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 85
- 230000003647 oxidation Effects 0.000 claims abstract description 58
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 58
- 238000009826 distribution Methods 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 27
- 150000002500 ions Chemical class 0.000 claims description 32
- 238000010030 laminating Methods 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 239000012298 atmosphere Substances 0.000 claims description 19
- 238000001816 cooling Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract 3
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 114
- 235000012431 wafers Nutrition 0.000 description 94
- 239000007924 injection Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000004531 microgranule Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Element Separation (AREA)
Abstract
This process for producing a bonded SOI wafer is characterized in that: a silicon oxide film is formed using a batch-type heat treatment furnace by conducting a thermal oxidation treatment which includes thermal oxidation during temperature rising and/or thermal oxidation during temperature declining, so that the buried oxide film in the bonded SOI wafer to be obtained after bond wafer separation has a concentric circular thickness distribution; and the bonded SOI wafer after the separation is subjected to a reducing heat treatment, thereby making the film thickness range of the buried oxide film smaller than the film thickness range of the film which has not undergone the reducing heat treatment. With this process for producing a bonded SOI wafer, it is possible to inhibit the in-plane distribution of the buried-oxide-film thicknesses from becoming uneven upon the reducing heat treatment to be conducted after the separation at the SOI layer.
Description
Technical field
The present invention is the manufacture method about a kind of attaching type SOI wafer utilizing ion implanting stripping method.
Background technology
In recent years, for the manufacture method of SOI wafer, peel off after the wafer injecting ion is combined and manufacture SOI crystalline substance
Method (the ion implanting stripping method: also known as Smart of circleTechnology) start again come into one's own.This ion implantation
In two Silicon Wafers, while at least one party forms oxide-film, from the above note of the Silicon Wafer (laminating wafer) of the opposing party
Enter the gas ion such as hydrion or noble gas ion, make this inside wafer form micro-bubble layer (inclosure layer).
Face Silicon Wafer (substrate wafer) adherence through oxide-film and the opposing party of this ion will be injected afterwards, after-applied
The wafer (laminating wafer) of one side is peeled off as film like as splitting surface by heat treatment (stripping heat treatment) with micro-bubble layer, enters
One step applying heat treatment (in conjunction with heat treatment) makes it be fixedly combined and becomes the technology (with reference to patent documentation 1) of SOI wafer.Depend on
The method, splitting surface (release surface) will become good minute surface, and the uniformity of the film thickness being relatively easily available soi layer is higher
SOI wafer.
But, when making SOI wafer with ion implanting stripping method, the SOI wafer surface after stripping there are ion implanting
The damage layer caused, the degree of roughness on surface is bigger compared with the minute surface of the Silicon Wafer of general product hierarchy again.Therefore, in
It is coarse that ion implanting stripping method must go to except so damage layer and surface.Known in order to remove this damage layer etc., in combination
In final step after heat treatment, carry out the mirror ultrafinish (processing capacity: about having the amount of grinding being referred to as contact polishing extremely low
100nm)。
But, when carrying out the grinding containing machining key element in soi layer, owing to the processing capacity ground is unequal, can produce
The raw injection due to hydrion etc., the problem peeling off the film thickness uniformity deterioration of the soi layer caused.
For method with the such problem points of solution, there is the coarse planarization carrying out high-temperature heat treatment to improve surface
Process to replace contact polishing.
Such as in patent documentation 2, record after peeling off heat treatment or combining heat treatment, not by the surface of soi layer
It is ground, but imposes heat treatment under the reproducibility atmosphere comprising hydrogen and (instant heating, cool down heat treatment rapidly
(Rapid Thermal Annealing,RTA))。
Furthermore, in patent documentation 3, record in peeling off (or after combining heat treatment) after heat treatment, through in
Heat treatment under oxidation atmosphere removes this oxide-film after soi layer forms oxide-film, then imposes at the heat of reproducibility atmosphere
Reason (instant heating, rapidly cool down heat treatment (RTA process)).
Again in patent documentation 4, record and carry out noble gas, hydrogen through the SOI wafer after peeling off or these are a little
Mixed gas atmosphere under planarization heat treatment after carry out sacrificial oxidation process, with reach simultaneously the planarization of release surface with
The avoidance of OSF.
So, through carrying out high-temperature heat treatment to replace contact polishing to carry out improving at shaggy planarization
Reason, can obtain the film thickness scope with diameter 300mm and soi layer of volume production level at present through ion implanting stripping method
The value of minima (maximum in face deduct) is in the SOI wafer of the good membranes thickness evenness of below 3nm.
Popularizing with portable type terminating machine in recent years again, the power reducing of semiconductor device, downsizing, high-performance melt
Begin the necessity become, and as the design specification strong candidate after 22 nm are from generation to generation, carries out there be the most vague and general of use SOI wafer
The exploitation of type device.In this complete vague and general type device, while the film thickness of soi layer becomes the thinnest about 10nm, due to SOI
The film thickness distribution of layer can affect the threshold voltage of device, for being distributed with the inner film thickness of soi layer, it is desirable to the film thickness in face
Scope is in the uniformity of the degree of below 1nm.
Further in recent years, motion have by imbedded in the insulation being generally used for substrate wafer oxidation film layer (with
It is also known as down BOX film) plus bias, to control the threshold voltage of device, have under this situation and manufacture the Thin of BOX film thickness thinning
Necessity of BOX type SOI wafer, and be distributed in the face about BOX film thickness and also have high uniformity (specifically film thickness scope
At below 1nm) necessity.
About the manufacture method of the thin film SOI wafer of Thin BOX type so, uniform for the distribution of soi layer film thickness
Change, the method carrying out ion implanting with segmentation, or carry out applying segmentation ion implanting the oxidation processes after soi layer is peeled off
In, the soi layer film thickness making the injection degree of depth be caused by enforcement cooling oxidation (making the method that oxide-film is formed in cooling) divides
The method that in the face that cloth and oxidation are caused, processing capacity cancels each other is to reach film thickness scope at below 1nm (with reference to patent literary composition
Offer 5).
Again in patent documentation 6, as the process of the thickness of the embedment oxide-film reducing SOI wafer, record in hydrogen, argon
Heat treatment is carried out with the temperature of more than 1000 DEG C under gas or this little mixed gas atmosphere.
(prior art literature)
Patent documentation 1: Japanese Unexamined Patent Publication 5-211128 publication
Patent documentation 2: Japanese Unexamined Patent Publication 11-307472 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2000-124092 publication
Patent documentation 4: International Publication the 2003/009386th
Patent documentation 5: Japanese Unexamined Patent Publication 2013-125909 publication
Patent documentation 6: Japanese Unexamined Patent Publication 2010-141127 publication
Summary of the invention
[problem that invention to be solved]
On the other hand, about the inner evenness of BOX film thickness, study the thin film SOI wafer of Thin BOX type, investigation
The result of passage in the step of the face inner film thickness scope of soi layer, the planarization heat treatment carried out after being known from soi layer stripping
In the heat treatment of reproducibility atmosphere, in the face of BOX film thickness, distribution will deteriorate.About the BOX thickness caused by reproducibility atmosphere
Degree distribution deteriorates, due to oxygen SiO in BOX film2Reduction, reduction when BOX film thickness reduces is variant in face,
And form face inner film thickness distribution and caused.
For the occurrence cause of distribution in the face of the BOX film thickness caused by the reduction of this kind of BOX film thickness, can
Enumerate in the heating and cooling in reproducibility heat treatment step and high temperature maintain in face in Temperature Distribution, be reduced and be diffused into outside
The distribution etc. of oxygen pneumatic caused, and in the batch heat-treatment furnace of longitudinal type stove, easily form concentric circles distribution.
It is in batch heat-treatment furnace that its reason speculates, as the heater of thermal source near wafer outer rim, makes in wafer
Heart portion and outer edge easily produce temperature difference, or because process gas flows through between cassette and pipe, make portion of crystal circle center and outer rim
The oxygen partial pressure in portion is relatively easily generated.So BOX film thickness caused by heat treatment (reproducibility heat treatment) under reproducibility atmosphere
The variation of distribution, although the thickness of unrelated BOX film and occur, but particularly at the thin film SOI wafer of Thin BOX type, owing to chasing after
Seek higher uniformity, therefore become great problem.
The present invention is in view of foregoing problems, it is provided that the manufacture method of a kind of attaching type SOI wafer, it is possible to suppression is shelled by soi layer
Reproducibility heat treatment after from and the variation of distribution in the face of embedment oxide thickness that produces.
[solving the technological means of problem]
In order to reach object defined above, according to the present invention, it is provided that the manufacture method of a kind of attaching type SOI wafer, with monocrystal silicon
The laminating wafer constituted and the crystal column surface of at least one party of substrate wafer give forming silicon oxidation through thermal oxidation
Film, forms ion in surface ion injection hydrion, at least one gas ion of noble gas ion of this laminating wafer
Implanted layer, after being fitted through this silicon oxide layer in the surface on the ion implanted surface of this laminating wafer with this substrate wafer,
The method producing attaching type SOI wafer by being peeled off by this laminating wafer with this ion implanted layer, wherein aoxidizes this silicon
Film uses batch heat-treatment furnace, by carrying out at least containing any one in the thermal oxide in the thermal oxide of liter warming middle-JIAO and cooling
This thermal oxidation, make the embedded oxide-film of this attaching type SOI wafer after stripping be formed as the thickness of oxidation film of concentric circles
Degree distribution,
Reproducibility heat treatment is carried out further by this attaching type SOI wafer after this laminating wafer is peeled off, this is interior
The film thickness range shorter of embedding oxide-film is to less than the film thickness scope before this reproducibility heat treatment.
When attaching type SOI wafer after wafer of fitting is peeled off carries out reproducibility heat treatment, embedment oxide thickness is easy
It is distributed in forming the face of concentric circles.Therefore, through by can be with the embedment oxide-film so formed by reproducibility heat treatment
It is distributed in the face that in the face of thickness, distribution cancels each other, is formed when silicon oxide layer is formed, it is possible to really had good uniformity
Attaching type SOI wafer.
The film thickness scope that now can make this embedded oxide-film after this reproducibility heat treatment is below 1.0nm.With this
The method of invention, it is possible to really obtain the SOI wafer with the best film thickness scope.
Again in now can make this reproducibility heat treatment in 100% argon atmosphere or the atmosphere of hydrogen of 100%, or
It is to carry out under both mixed gas atmosphere.In the method for the present invention, to implement reproducibility under aforesaid atmosphere
Heat treatment is preferred.
Now, the oxide thickness distribution of this concentric circles is formed as concavity distribution.Laminating after laminating wafer is peeled off
In the reproducibility heat treatment of formula SOI wafer, owing to the film thickness distribution of embedment oxide-film easily becomes the convex of concentric circles, because of
If this makes the film thickness of embedment oxide-film be distributed as concavity to offset the variation of film thickness distribution in advance, it is possible to more positively
Obtain imbedding the attaching type SOI wafer having good uniformity of oxide-film.
[effect against existing technologies]
The manufacture method of SOI wafer under this invention, it is possible to suppression peeled off by soi layer after the reproducibility heat treatment that carries out and
The variation of distribution in face after the embedment oxide-film produced.
Brief Description Of Drawings
Fig. 1 is the flow chart of steps of the manufacture method of the attaching type SOI wafer showing the present invention.
Fig. 2 is to show when forming the laminating of the present invention of (embodiment) when BOX film thickness is distributed as concave silicon oxide layer
The flow chart of steps of the manufacture method of formula SOI wafer.
Fig. 3 is the simple flow chart of steps of the manufacture method showing the attaching type SOI wafer in comparative example.
Detailed description of the invention
As aforementioned, there is the reproducibility heat treatment after peeling off through laminating wafer, and make embedment oxide-film (BOX film)
The problem that face inner film thickness distribution deteriorates.
Through the result that inventor constantly studies, envision and formed when silicon oxide layer is formed and through reproducibility heat
It is distributed in being distributed, in processing the face of the embedment oxide-film formed, the face cancelled each other, and it is high to obtain imbedding the oxide-film uniformity
Attaching type SOI wafer.
Inventor is it is further contemplated that go out with when silicon oxide layer is formed, in batch heat-treatment furnace, by carrying out
At least contain either one thermal oxidation in the thermal oxide added in the thermal oxide of warming middle-JIAO and cooling, and can be by by ring originality heat
The deterioration being distributed in processing the face formed is offset, and completes the present invention.
Described further below about the present invention.The SOI wafer manufacture method of the present invention, uses ion implanting stripping method.Fig. 1
It it is the flow chart of steps of the manufacture method of the attaching type SOI wafer showing the present invention.First, in the step (a) of Fig. 1, as one-tenth
For laminating wafer and the substrate wafer of supporting substrates, prepare such as through the single crystal wafers of mirror ultrafinish.
Then, in the step (b) of Fig. 1, batch heat-treatment furnace is used, by thermal oxidation in laminating wafer shape
Become silicon oxide layer.This silicon oxide layer can only be formed at substrate wafer, also can be formed at two wafers.In the present invention, form this
In the thermal oxidation step of silicon oxide layer, by carry out including at least add warming middle-JIAO thermal oxide or cooling in thermal oxide appoint
The thermal oxidation of one side, and form silicon oxide layer, so that the embedment oxide-film of the attaching type SOI wafer after Bao Liing is formed as same
The oxide thickness distribution of heart round shape.
In batch heat-treatment furnace, when cooling, carry out thermal oxidation in face, then easily form the thickness of oxidation film of convex
Degree distribution.This is that in lowering the temperature due to batch heat-treatment furnace, single crystal wafers peripheral part relatively central part is easier to heat release, and relative
Become caused by low temperature.Therefore, in cooling, oxidation processes is carried out, then in can making the face of silicon oxide layer (the BOX film after stripping)
The distribution convex in concentric circles.
Furthermore, it is understood that the size of the convex formed by cooling oxidation, the temperature when cooling oxidation is the highest, initially
The temperature difference between temperature and oxidation terminate is the biggest, and variations in temperature is the most anxious, and the pore size between the above wafer in stove is (between groove
Every) the narrowest, then central part is poor with the film thickness of peripheral part will be the biggest.Therefore, these a little numerical value are suitably selected available with
The oxide-film of the convex of distribution in desired.The most now may also respond with the oxidation need combined in maintaining with isothermal.
In time heating, carry out oxidation processes conversely speaking, then can form the concave thickness of oxidation film of concentric circles in face
Degree distribution.Heat to make the periphery of wafer start as high temperature.The most also as it was previously stated, suitable selection is heated during oxidation
Temperature, temperature difference, variations in temperature emergency, the numerical value such as groove interval to be to obtain with the concave oxidation of distribution in desired
Film.The most now may also respond with the oxidation need combined during isothermal maintains.
So, the oxide thickness distribution of the convex of concentric circles, it is possible to only carry out by aoxidizing not carry out heating
Cooling oxidation, and in response to the oxide compound in need maintaining with isothermal to be formed.If the most appropriately combined oxidation and the cooling oxygen of heating
Change, just can be deliberately formed the film thickness distribution of desired concentric circles.
Then, in the step (c) of Fig. 1, the gas ion such as hydrion, inert gas ion is injected, in laminating wafer
It is internally formed ion implanted layer.
Then, in the step (d) of Fig. 1, by saturating with the surface of substrate wafer for the surface injecting ion side of laminating wafer
Cross silicon oxide layer adherence and fit.It addition, also can clean before two wafer laminatings, to remove the microgranule of crystal column surface attachment
And Organic substance.
Then, in the step (e) of Fig. 1, inject ions into layer and peel off laminating wafer as border, on substrate wafer
Form embedment silicon oxide layer and soi layer, obtain attaching type SOI wafer.Though not recording in Fig. 1 again, but can also be in strip step
Sacrificial oxidation process (after thermal oxide, being removed by the heat oxide film formed) etc., the damage of deionizing implanted layer is carried out after (e)
Layer.
Afterwards, in the step (f) of Fig. 1, under reproducibility atmosphere, carry out heat treatment (reproducibility heat treatment).It addition, this
The so-called reproducibility atmosphere of invention, instigates oxygen SiO in BOX2Reduce through heat treatment, occur BOX film thickness to reduce
The atmosphere of phenomenon, specifically, though the argon atmosphere of 100% or the atmosphere of hydrogen of 100% can be enumerated, or the mixing of they
Atmosphere is suitable example, but is not limited to this.
When making SOI wafer with ion implanting stripping method, the attaching type SOI wafer after peeling off carries out with planarization and removes
When removing the reproducibility heat treatment for the purpose of damage, owing to the processing capacity of the BOX film of the peripheral part of wafer easily becomes relatively big, therefore
BOX film thickness distribution after reproducibility heat treatment, is typically easy to become the convex of concentric circles.Certainly, according to heat treatment condition
Also may be the concavity of concentric circles.
Therefore, corresponding to being distributed or caused by reproducibility heat treatment such as present invention BOX film thickness after reproducibility heat treatment
The distribution of BOX film thickness processing capacity, through appropriately combined heat oxidation or cooling oxidation, it is possible to after reproducibility heat treatment
BOX oxide thickness distribution uniformity.
And for example with aforementioned, owing to the BOX film thickness after reproducibility heat treatment is distributed, it is typically easy to form the convex of concentric circles
Shape, therefore so that the distribution of the oxide thickness of the concentric circles of the silicon oxide layer formed before laminating is formed as concavity and is distributed as
Good.So, then the attaching type SOI wafer with the high BOX film of uniformity can be obtained simply.
In thermal oxidation step (b) before Fig. 2 is shown in laminating, form silicon oxide layer so that after strip step (e)
The manufacture method of BOX film thickness present invention when being distributed as concavity.Under this situation, as shown in the step (b) of Fig. 2, Yu Yidan
The laminating wafer 10 that crystal silicon is constituted is formed with the silicon oxide layer 11 of the concave film thickness distribution with concentric circles.
And so when thermal oxidation step (b) forms concave silicon oxide layer thickness distribution, such as the step (e) of Fig. 2
Shown in, after strip step, it is possible to obtain the concave embedment oxide-film between substrate wafer 12 and soi layer 14 with concentric circles
The attaching type SOI wafer 15 of (BOX film) 13.Further, the attaching type SOI wafer 15 in step (e) gained of Fig. 2 applies reproducibility
Heat treatment step (f), then the BOX film thickness distribution of the convex that this reproducibility heat treatment should be formed, by preformed concavity
The distribution of BOX film thickness is offset, and can suppress the deterioration of the uniformity caused by reproducibility heat treatment.The step of its result such as Fig. 2
Suddenly shown in (f), it is possible to obtain the attaching type SOI wafer that the uniformity of BOX film is high.
In Fig. 2, although be distributed as convex as premise with explanation using the BOX film thickness formed because of reproducibility heat treatment,
When the BOX film thickness that reproducibility heat treatment is formed is distributed as concavity, in thermal oxidation step (b), form silicon oxidation
Film 11 and after making stripping BOX film thickness be distributed as convex.
Again in the present invention, it is possible to make the film thickness scope of the embedment oxide-film after reproducibility heat treatment (BOX film) at 1.0nm
Below.According to this manufacture method, it is possible to attain full and complete satisfaction in recent years to the BOX required by Thin BOX type thin film SOI wafer
Film thickness scope, at below 1nm, the most also meets below 0.5nm, uniformity higher attaching type SOI wafer.
[embodiment]
Though display embodiments of the invention and comparative example are with the more specific description present invention below, but the present invention non-limiting
In this.
(embodiment)
Only in the silicon oxide layer of the laminating wafer manufacturing thickness 30nm being made up of the monocrystal silicon of diameter 300mm (after stripping
Become the silicon oxide layer of BOX film) afterwards (step (b) of Fig. 1), carry out hydrion injection (step (c) of Fig. 1).
The formation of silicon oxide layer, utilizes batch heat-treatment furnace, in the warming middle-JIAO that adds of 900 DEG C to 950 DEG C, and 950 DEG C etc.
Temperature imports oxygen in maintaining, and carries out the oxidation of heating of dry oxidation.Make again the speed of heating heated in oxidation of 900 DEG C to 950 DEG C
It is that 1 DEG C/min is to improve the effect of oxidation of heating.(it addition, temperature during wafer input oxidation furnace is 600 DEG C, 600 DEG C to 900
DEG C speed of heating be 5 DEG C/min) heat oxidation after silicon oxide layer face in distribution, in its face, scope is 0.8nm, be distributed such as
Shown in the step (b) of Fig. 2, for the concave concentric circles distribution that outer shaft portion is thick compared with central part.
Hydrion is injected to two-stage segmentation and injects, and for primary injection, carries out H+、30keV、2.6e16cm-2、
Implant angle 0 degree, the injection that Notch angle is 0 degree, for secondary injection, carry out H+、30keV、2.6e16cm-2, inject
Angle 0 degree, the injection that Notch angle is 90 degree.
After injecting hydrion, fit (step (d) of Fig. 1) through with substrate wafer, the blanket of nitrogen of 30 minutes at 500 DEG C
Enclosing heat treatment, peel off (step (e) of Fig. 1) with hydrogen ion implantation layer, the film thickness of the soi layer after stripping is 330nm.Afterwards,
Carry out 900 DEG C high-temperature vapour oxidation processes and in release surface formed 250nm heat oxide film (sacrificial oxidation film) after, through will
The oxide-film formed is removed with the HF aqueous solution of 10%, to remove the damage layer of ion implanting.
Afterwards, be carried out at 1200 DEG C 1 hour, the reproducibility heat treatment (step (f) of Fig. 1) of 100%Ar atmosphere so that
Surface planarisation.BOX film thickness after reproducibility heat treatment is distributed as film thickness by filming to 25nm, BOX film thickness in face
There is improvement before scope: 0.4nm, relatively reproducibility heat treatment, obtain the attaching type that the BOX film uniformity of the step (f) such as Fig. 2 is high
SOI wafer.
Further in thereafter, carry out the high-temperature vapour oxidation processes of 950 DEG C and to form the heat oxide film of 400nm (sacrificial
Domestic animal oxide-film) after, the heat oxide film formed is removed with 10%HF aqueous solution, makes the soi layer of 10nm (± 0.5nm).Remove
BOX film thickness (after filming) after this sacrificial oxidation film, for reproducibility heat treatment after identical BOX film uniformity Gao Erliang
Good attaching type SOI wafer.
(comparative example)
Make with in addition to such as the known oxidation carrying out laminating wafer with fixed temperature 950 DEG C, identical with embodiment
The attaching type SOI wafer of condition.Now, as shown in the step (b) of Fig. 3, the silicon oxide layer 111 on laminating wafer 110 surface
Being distributed as in face being uniformly distributed, in the face of silicon oxide layer 111, in the face of distribution, scope is 0.2nm again.(it addition, wafer puts into heat
The temperature of oxidation processes stove is 600 DEG C, and the speed of heating making 600 DEG C to 950 DEG C is 5 DEG C/min, imports oxygen after arriving 950 DEG C
Gas, carries out dry oxidation under fixed temperature).
Afterwards, though making the attaching type SOI wafer 115 carrying out the heat treatment identical with the embodiment stripping to carry out, but
It is distributed in the face of the film thickness of the BOX film 113 between substrate wafer 112 and the soi layer 114 of this time point, such as the step of Fig. 3
E () show uniformly.
Afterwards, when carrying out the reproducibility heat treatment as embodiment, BOX film 113 film thickness is distributed as film thickness in face
Deteriorate before scope: 1.1nm, relatively reproducibility heat treatment, such as the step (f) of Fig. 3, divide in the face of the convex becoming concentric circles
Cloth.Followed by, carry out the high-temperature vapour oxidation processes of 950 DEG C and after forming the heat oxide film (sacrificial oxidation film) of 400nm, will
The heat oxide film formed is removed with 10%HF aqueous solution, makes the soi layer of 10nm (± 0.5nm).The film thickness of BOX film now
Scope is also more than 1nm.
Previous embodiment, the silicon oxide layer formation condition of comparative example, ion implanting stripping conditions, reproducibility thermal oxidation
Condition, sacrificial oxidation treatment conditions and result are shown in table 1.
[table 1]
Through table 1, learn and be distributed relative in embodiment obtains the BOX film thickness distribution good face less than 0.5nm, than
Relatively example 1 then obtains 1.1nm, it is impossible to the BOX film thickness scope in recent years that is met be the requirement of below 1nm face in be distributed.
It addition, the present invention is not limited by previous embodiment.Previous embodiment, for illustrating, has the application with the present invention
Technological thought described in the scope of the claims is substantially identical composition, and reaches same purpose effect person, is all contained in the present invention
Technical scope.
Claims (4)
1. a manufacture method for attaching type SOI wafer, the laminating wafer and at least the one of substrate wafer constituted with monocrystal silicon
Side crystal column surface give being formed silicon oxide layer through thermal oxidation, in this laminating wafer surface ion inject hydrogen from
Son, at least one gas ion of noble gas ion and form ion implanted layer, ion implanted by this laminating wafer
After fitting through this silicon oxide layer in the surface of surface and this substrate wafer, by with this ion implanted layer, this laminating wafer is peeled off
And the method producing attaching type SOI wafer, wherein,
This silicon oxide layer is used batch heat-treatment furnace, by carrying out at least containing the heat in the thermal oxide of liter warming middle-JIAO and cooling
This thermal oxidation of any one in oxidation, makes the embedded oxide-film of this attaching type SOI wafer after stripping be formed as concentric
The oxide thickness distribution of round shape,
Reproducibility heat treatment is carried out, by this embedded oxygen further by this attaching type SOI wafer after this laminating wafer is peeled off
Change the film thickness range shorter of film to less than the film thickness scope before this reproducibility heat treatment.
2. the manufacture method of attaching type SOI wafer as claimed in claim 1, wherein makes this after this reproducibility heat treatment embedded
The film thickness scope of oxide-film is below 1.0nm.
3. the manufacture method of attaching type SOI wafer as claimed in claim 1 or 2, wherein this reproducibility heat treatment is in 100%
Argon atmosphere or the atmosphere of hydrogen of 100%, or carry out under both mixed gas atmosphere.
4. the manufacture method of attaching type SOI wafer as claimed any one in claims 1 to 3, the wherein oxygen of this concentric circles
Change film thickness distribution and be formed as concavity distribution.
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| JP2014046098A JP6107709B2 (en) | 2014-03-10 | 2014-03-10 | Manufacturing method of bonded SOI wafer |
| PCT/JP2015/000575 WO2015136834A1 (en) | 2014-03-10 | 2015-02-09 | Process for producing bonded soi wafer |
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| US (1) | US9793154B2 (en) |
| EP (1) | EP3118889B1 (en) |
| JP (1) | JP6107709B2 (en) |
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| CN (1) | CN106062923B (en) |
| SG (1) | SG11201606965QA (en) |
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| CN106024621A (en) * | 2015-03-30 | 2016-10-12 | 苏泰克公司 | Process for fabricating structure having buried dielectric layer of uniform thickness |
| CN111446165A (en) * | 2020-04-16 | 2020-07-24 | 绍兴同芯成集成电路有限公司 | Wafer heat treatment process and wafer double-side electroplating process |
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| JP6686962B2 (en) * | 2017-04-25 | 2020-04-22 | 信越半導体株式会社 | Method for manufacturing bonded wafer |
| JP6747386B2 (en) * | 2017-06-23 | 2020-08-26 | 信越半導体株式会社 | Method for manufacturing SOI wafer |
| JP6760245B2 (en) * | 2017-11-06 | 2020-09-23 | 信越半導体株式会社 | Method for manufacturing an SOI wafer having a thin film SOI layer |
| CN110184655B (en) * | 2019-04-25 | 2022-01-11 | 上海新傲科技股份有限公司 | Surface oxidation method of wafer |
| CN110349843B (en) * | 2019-07-26 | 2021-12-21 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof, biological recognition device and display device |
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Also Published As
| Publication number | Publication date |
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| EP3118889B1 (en) | 2019-09-25 |
| JP2015170796A (en) | 2015-09-28 |
| SG11201606965QA (en) | 2016-10-28 |
| KR102173455B1 (en) | 2020-11-03 |
| US20160372363A1 (en) | 2016-12-22 |
| TW201546873A (en) | 2015-12-16 |
| KR20160132017A (en) | 2016-11-16 |
| CN106062923B (en) | 2019-05-17 |
| EP3118889A4 (en) | 2017-10-18 |
| US9793154B2 (en) | 2017-10-17 |
| WO2015136834A1 (en) | 2015-09-17 |
| JP6107709B2 (en) | 2017-04-05 |
| TWI573173B (en) | 2017-03-01 |
| EP3118889A1 (en) | 2017-01-18 |
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