CN106057932A - 抗辐照太阳能电池制备方法 - Google Patents
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Abstract
本发明公开了一种抗辐照太阳能电池制备方法，包括六个步骤：在单晶硅片表面形成SiO2层；在SiO2层上溅射钨掩蔽膜；在钨掩蔽膜上刻蚀钨掩蔽膜图形；对刻蚀完毕的钨掩蔽膜进行磷离子叠加注入；低温退火；高温扩散。本发明制备工艺简便、可靠性高、不影响太阳能电池充电。
Description
技术领域
本发明属于太阳能电池技术领域，特别是涉及抗辐照太阳能电池的制备方法。
背景技术
随着世界能源的日益紧张，也随着经济发展耗电量的飞速增长，太阳能电池能因为其绿色环保、应用领域广泛、安全性能高等特点，也越来越受人们的喜爱。
然而，在太阳能电池工作的过程中，带电粒子辐射对太阳能电池的危害很大，会产生多种晶体缺陷，造成复合中心增加，使光生载流子的寿命和扩散长度降低，造成太阳能电池电学性能的变差，进而降低电池的光电转换效率，直接影响太阳能电池的可靠性和使用寿命。
目前，解决电池辐照的方式主要为在太阳能电池表面都覆盖有玻璃盖片，由于玻璃盖片大多采用掺杂5%二氧化铈的硼硅酸盐作为玻璃衬底，由于其折射率为1.526，入射太阳光在界面的反射损失为4%，则在玻璃衬底表面沉积一层起增透作用的氟化镁薄膜，使入射太阳光在界面的反射损失降低到1%。但是由于氟化镁薄膜不导电，使得太阳能电池存在充电不均匀的问题，为此在氟化镁薄膜表面蒸镀一层导电性能和透明度良好的氧化铟锡（ITO）膜。而ITO材料又存在在可见光波段对太阳光有吸收和与氟化镁材料之间存在匹配问题，当蒸镀在氟化镁薄膜表面的ITO膜过厚会降低电池对光的吸收效率，而影响电池的光电转换效率；ITO膜过薄则容易在氟化镁薄膜上脱落，降低了太阳能电池工作的可靠性。
发明内容
本发明的目的在于克服现有技术的不足，提供一种制备工艺简便、可靠性高、不影响太阳能电池充电的一种抗辐照太阳能电池的制备方法。
本发明采取的技术方案是：抗辐照太阳能电池制备方法，包括以下步骤：步骤1：采用电阻率6-8Ω.cm的P型单晶硅片，在表面热氧化形成一个20-45nm厚度的SiO2层；步骤2：在SiO2层上溅射一层钨掩蔽膜；步骤3：通过光刻、刻蚀的方式形成钨掩蔽膜图形，使得该图形注入区线宽2-3μm，掩蔽间隔宽3-4μm；步骤4：对钨掩蔽膜进行磷离子叠加注入，次数为五次，每次注入的能量和剂量分别为0.4MeV，3×1014/cm2；0.7MeV，3×1013/cm2；1.2MeV，5×1013/cm2；3MeV，8×1013/cm2；6MeV，1×1014/cm2；步骤5：在保护氮气环境下对离子注入完毕的硅晶片进行低温退火，温度600℃，时间一小时；保护氮气流量为0.7L/min;
步骤6：低温退火完毕，继续在氮气保护下，在1000℃的温度下扩磷13min。
通过磷离子叠加注入和低、高温扩散退火，在电池的表面形成密集而整齐的垂直PN结，与传统常规平面结电池相比，其抗辐照的能力提高了近一倍，此外，由于采用离子注入方式在硅片的表层形成6-8μm深度的垂直结，并不像传统的沟槽方式那样会破坏晶体完整结构，因此，本方法制作的电池充电性能强、抗热冲 进一步，步骤3中，钨掩蔽膜图形上注入区线宽2μm，掩蔽间隔宽3μm。
本发明的优点是：制备工艺简便、可靠性高、充电性能稳定，抗热冲击性能也好。
附图说明
图1是本发明的流程示意图。
具体实施方式
如图1所示，本发明方法包括以下步骤：
步骤1：采用电阻率6-8Ω.cm的P型单晶硅片，在表面热氧化形成一个35nm厚度的SiO2层；
步骤2：在SiO2层上溅射一层钨掩蔽膜；
步骤3：通过光刻、刻蚀的方式形成钨掩蔽膜图形，使得该图形注入区线宽2μm，掩蔽间隔宽3μm；
步骤4：对钨掩蔽膜进行磷离子叠加注入，次数为五次，每次注入的能量和剂量分别为0.4MeV，3×1014/cm2；0.7MeV，3×1013/cm2；1.2MeV，5×1013/cm2；3MeV，8×1013/cm2；6MeV，1×1014/cm2；
步骤5：在保护氮气环境下对离子注入完毕的硅晶片进行低温退火，温度600℃，时间一小时；保护氮气流量为0.7L/min;
步骤6：低温退火完毕，继续在氮气保护下，在1000℃的温度下扩磷13min。
Claims (2)
1.抗辐照太阳能电池制备方法，其特征是：包括以下步骤：
步骤1：采用电阻率6-8Ω.cm的P型单晶硅片，在表面热氧化形成一个20-45nm厚度的SiO2层；
步骤2：在SiO2层上溅射一层钨掩蔽膜；
步骤3：通过光刻、刻蚀的方式形成钨掩蔽膜图形，使得该图形注入区线宽2-3μm，掩蔽间隔宽3-4μm；
步骤4：对钨掩蔽膜进行磷离子叠加注入，次数为五次，每次注入的能量和剂量分别为0.4MeV，3×1014/cm2；0.7MeV，3×1013/cm2；1.2MeV，5×1013/cm2；3MeV，8×1013/cm2；6MeV，1×1014/cm2；
步骤5：在保护氮气环境下对离子注入完毕的硅晶片进行低温退火，温度600℃，时间一小时；保护氮气流量为0.7L/min;
步骤6：低温退火完毕，继续在氮气保护下，在1000℃的温度下扩磷13min。
2.根据权利要求1所述的抗辐照太阳能电池制备方法，其特征是：步骤3中，钨掩蔽膜图形上注入区线宽2μm，掩蔽间隔宽3μm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491970A (zh) * | 2019-08-21 | 2019-11-22 | 哈尔滨工业大学 | 基于深层离子注入方式的倒置四结太阳电池抗位移辐照加固方法 |
| CN112531055A (zh) * | 2020-12-24 | 2021-03-19 | 中山德华芯片技术有限公司 | 一种柔性太阳能电池及其制备方法 |
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| CN1941422A (zh) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | 具有布拉格反射器的n+/p型高抗辐照GaAs太阳电池 |
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| CN203398137U (zh) * | 2013-08-05 | 2014-01-15 | 天津恒电空间电源有限公司 | 太阳电池阵抗辐照玻璃盖片 |
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| CN110491970A (zh) * | 2019-08-21 | 2019-11-22 | 哈尔滨工业大学 | 基于深层离子注入方式的倒置四结太阳电池抗位移辐照加固方法 |
| CN112531055A (zh) * | 2020-12-24 | 2021-03-19 | 中山德华芯片技术有限公司 | 一种柔性太阳能电池及其制备方法 |
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