CN103972313B - 一种双面太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种双面太阳能电池，包括：在玻璃片（5）的一面依次沉积光子晶体反射层（4）、第二透明电极层（3）、顶电池层（2）和第一透明电极层（1）；在玻璃片（5）的另一面依次沉积第三透明电极层（6）、底电极层（7）和金属背电极层（8）；从而得到所述的双面太阳能电池。本发明的双面太阳能电池创新性地提出了不使用隧道结，采用光子晶体层调节光电流匹配，解决了传统太阳能电池的缺点，如单节电池转换效率低，多节电池隧道结不易制作，两节电池光电流不易匹配，本发明的优点在于将叠层太阳能电池分为两部分分别制作于玻璃的两面，省去了隧道结，同时引入光子晶体来调节光吸收来达到光电流匹配的效果。
Description
技术领域
本发明属于太阳能电池技术领域，具体是涉及一种双面太阳能电池及其制备方法。
背景技术
随着工业社会迅猛发展，能源消耗急剧增加，传统化石能源已经不能满足人们的生产生活需要，而在各种新型能源中，风能的不稳定性，地热的局域性，核能的安全性成为了制约其发展的原因。相比之下，太阳能安全，洁净，稳定，容易利用的特点就决定了其将来会作为一种主要的能源供应。
太阳能电池就是一种利用太阳能的有效手段，传统晶体硅太阳能电池已能达到可观的转换效率，但其制备成本仍然很高，为了进一步降低成本，提高效率，各种薄膜太阳能电池应运而生，包括微晶硅薄膜硅太阳能电池，碲化镉（CdTe）太阳能电池，砷化镓（GaAs）太阳能电池、磷化铟（InP）太阳能电池、磷化镓铟（InGaP）太阳能电池。然而薄膜型太阳能电池效率一般多在10%以下，只有在做成多层电池时才会有较高的转化效率。相较于晶体硅太阳能电池和单层膜太阳能电池，叠层太阳能电池具有成本低，转化率高的优点。
对现有技术进行检索，中国专利201010045857.7申请了一种掺杂中间层结构的太阳能电池的制造方法，该方法将微晶硅电池与非晶硅电池通过隧道结连接制备叠层太阳能电池，具有较高转换效率。中国专利200910026002.7申请了一种非晶硅/染料敏化叠层太阳能电池的制备方法。该方法将顶电池和底电池用过加热结合在一起，然后注入电解质。中国专利200710051030.5申请了一种生物多糖高分子磁性微球及其制备方法一种机械叠层AlSb/CIS薄膜太阳能电池的制备方法。该方法将两种电池分别做好后，由钼电极叠加在一起。以上这些专利申请在一定程度上都可以有效利用太阳能在各个波段的能量，但是均存在着中间层或电池各个界面电阻大，隧道结不易制备等缺点。
为了解决上述技术问题，本发明的双面太阳能电池创新性地提出了不使用隧道结，采用光子晶体层调节光电流匹配，解决了传统太阳能电池的缺点，如单节电池转换效率低，多节电池隧道结不易制作，两节电池光电流不易匹配，本发明的优点在于将叠层太阳能电池分为两部分分别制作于玻璃的两面，省去了隧道结，同时引入光子晶体来调节光吸收来达到光电流匹配的效果。
发明内容
本发明正是针对现有技术中存在的上述技术问题而提供了一种双面太阳能电池及其制备方法。
本发明的一种双面太阳能电池，包括：第一透明电极层1、顶电池层2、第二透明电极层3、光子晶体反射层4、玻璃片5、第三透明电极层6、底电极层7和金属背电极层8；其特征在于：在所述的玻璃片5的一面依次沉积光子晶体反射层4、第二透明电极层3、顶电池层2和第一透明电极层1；在所述的玻璃片5的另一面依次沉积第三透明电极层6、底电极层7和金属背电极层8；得到所述的双面太阳能电池。
优选地，所述的光子晶体为一维光子晶体，二维光子晶体或三维光子晶体。
优选地，所述的光子晶体反射层（4）为三维有序反蛋白石结构的ZnO。
优选地，所述的三维有序反蛋白石结构的ZnO的制备方法为：使用三电极的恒电势沉积方法，用硝酸锌配置Zn2+浓度0.02 mol/L，然后用硝酸钾配置(NO3)-浓度0.2mol/L，用稀硝酸调节pH值为弱酸性5~7之间，沉积电位-0.9V，沉积温度 70℃，沉积时间5000s，沉积完成并干燥后，450℃退火处理2小时，得到了三维有序反蛋白石结构的ZnO。
本发明的一种双面太阳能电池的制备方法：其特征在于：
（1）制备光子晶体反射层
在玻璃片的一面沉积光子晶体反射层；
（2）制备顶电池
在光子晶体反射层上面沉积第二透明电极层；
在第二透明电极层上沉积顶电池层；
在顶电极层上沉积第一透明电极层；
（3）制备底电池
在玻璃片的另一面沉积第三透明电极层；
在第三电极透明层上沉积底电极层；
在底电极层上沉积金属背电极层。
优选地，所述的光子晶体反射层为三维有序反蛋白石结构的ZnO。
优选地，所述的三维有序反蛋白石结构的ZnO的制备方法为：使用三电极的恒电势沉积方法，用硝酸锌配置Zn2+浓度0.02 mol/L，然后用硝酸钾配置(NO3)-浓度0.2mol/L，用稀硝酸调节pH值为弱酸性5~7之间，沉积电位-0.9V，沉积温度 70℃，沉积时间5000s，沉积完成并干燥后，450℃退火处理2小时，得到了三维有序反蛋白石结构的ZnO。
优选地，所述的顶电池层为PECVD沉积的非晶硅薄膜电池；其中P层 a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/18sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm；本征层a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝60min，膜厚d≈500nm；N层 a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm。
优选地，所述的底电极层为利用PECVD沉积的微晶硅薄膜电池；其中P层μ c-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/6sccm，衬底温度T＝250℃，射频功率RF Power＝35W，沉积时间t＝15min，膜厚d≈20nm；i a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝250℃，射频功率RF Power＝35W，沉积时间t＝90min，膜厚d≈500nm；n a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm。
优选地，所述的第一透明电极层、第二透明电极层和第三透明电极层均为透明导电薄膜ITO，透明导电薄膜ITO采用90wt%的In2O3和10wt%SnO2的氧化物陶瓷靶，利用磁控溅射方法制备，膜厚500nm。
本发明创新性地引入光子晶体反射层并完全舍弃了隧道结，优点是调节光匹配，去除隧道结电阻。光子晶体反射层可以是一维（光学多层介质膜），二维，或是三维，而顶电池和底电池可以是α-Si/μc-Si，CdS/CdTe，GaInP_2/GaAs，ZnSe/GaAs等，对于不同的电池组合，只需调节光子晶体的帯隙即可。而光子晶体反射层的材料选择也可以是多样的，只要求透光性较好的就可以。同时沉积顶电池和底电池的顺序也可以根据沉积条件不同而调整。本发明采用光子晶体层调节光电流匹配，解决了传统太阳能电池的缺点，如单节电池转换效率低，多节电池隧道结不易制作，两节电池光电流不易匹配，本发明的优点在于将叠层太阳能电池分为两部分分别制作于玻璃的两面，省去了隧道结，同时引入光子晶体来调节光吸收来达到光电流匹配的效果。
附图说明
图1为本发明的双面太阳能电池的结构示意图；
图2为本发明的光子晶体反射层的扫描电镜放大图；
图3为本发明的光子晶体反射层的反射图谱；
图中：1：第一透明电极层、2：顶电池层、3：第二透明电极层、4：光子晶体反射层、5：玻璃片、6：第三透明电极层、7：底电极层、8：金属背电极层。
具体实施方式
下面结合附图以及实施例对本发明做进一步详细说明。
实施例一：
非晶硅/ZnO光子晶体反射层/微晶硅太阳电池的制备
1.将ITO玻璃片洗净，在玻璃片的导电面上沉积PS微球，PS微球直径为300nm。
2.使用三电极的恒电势沉积方法，溶液配制为：用硝酸锌配置Zn2+浓度0.02 mol/L，用硝酸钾配置(NO3)-浓度0.2mol/L，用稀硝酸调节pH值为弱酸性5~7之间，沉积电位-0.9V，沉积温度 70℃，沉积时间5000s，沉积完成并干燥后，450℃退火处理2小时，得到了三维有序反蛋白石结构的ZnO。
3.在反蛋白石结构的ZnO上沉积透明导电薄膜ITO，透明导电薄膜ITO采用90%的In2O3和10%SnO2的氧化物陶瓷靶，利用磁控溅射方法制备，膜厚500nm。
4.在ITO/ZnO光子晶体反射层/玻璃片衬底上，利用PECVD沉积非晶硅薄膜电池。P层 a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/18sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm。本征层a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝60min，膜厚d≈500nm。N层 a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm。
5.在非晶硅薄膜电池/ITO/ZnO光子晶体反射层/玻璃片衬底上沉积透明导电薄膜ITO，方法同步骤3
6.在玻璃片的另一面沉积透明导电薄膜ITO，方法同步骤3
7.在ITO/玻璃片衬底上，利用PECVD沉积微晶硅薄膜电池。P层 μ c-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/6sccm，衬底温度T＝250℃，射频功率RF Power＝35W，沉积时间t＝15min，膜厚d≈20nm。i a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝250℃，射频功率RF Power＝35W，沉积时间t＝90min，膜厚d≈500nm。n a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RF Power＝50W，沉积时间t＝10min，膜厚d≈20nm。
8.背电极铝膜，通常采用蒸发或磁控溅射法制备，膜厚在500nm以上。
Claims (2)
1.一种双面太阳能电池，包括：第一透明电极层(1)、顶电池层(2)、第二透明电极层(3)、光子晶体反射层(4)、玻璃片(5)、第三透明电极层(6)、底电池层(7)和金属背电极层(8)；其特征在于：在所述的玻璃片(5)的一面依次沉积光子晶体反射层(4)、第二透明电极层(3)、顶电池层(2)和第一透明电极层(1)；在所述的玻璃片(5)的另一面依次沉积第三透明电极层(6)、底电池层(7)和金属背电极层(8)；得到所述的双面太阳能电池；
所述的第一透明电极层、第二透明电极层和第三透明电极层均为透明导电薄膜ITO，透明导电薄膜ITO采用90wt％的In2O3和10wt％SnO2的氧化物陶瓷靶，利用磁控溅射方法制备，膜厚500nm；
所述的光子晶体反射层(4)为三维有序反蛋白石结构的ZnO；
所述顶电池层和底电池层为α-Si/μc-Si，CdS/CdTe，GaInP_2/GaAs，ZnSe/GaAs；
所述的三维有序反蛋白石结构的ZnO的制备方法为：使用三电极的恒电势沉积方法，用硝酸锌配置Zn2+浓度0.02mol/L，然后用硝酸钾配置(NO3)-浓度0.2mol/L，用稀硝酸调节pH值为弱酸性5～7之间，沉积电位-0.9V，沉积温度70℃，沉积时间5000s，沉积完成并干燥后，450℃退火处理2小时，得到了三维有序反蛋白石结构的ZnO。
2.一种制备权利要求1所述的双面太阳能电池的方法，其特征在于包括下述步骤：
(1)制备光子晶体反射层
在玻璃片的一面沉积光子晶体反射层；
(2)制备顶电池
在光子晶体反射层上面沉积第二透明电极层；在第二透明电极层上沉积顶电池层；在顶电极层上沉积第一透明电极层；
(3)制备底电池
在玻璃片的另一面沉积第三透明电极层；在第三电极透明层上沉积底电极层；在底电极层上沉积金属背电极层；
所述的顶电池层为PECVD沉积的非晶硅薄膜电池；其中P层a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/18sccm，衬底温度T＝200℃，射频功率RFPower＝50W，沉积时间t＝10min，膜厚d≈20nm；本征层a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝200℃，射频功率RFPower＝50W，沉积时间t＝60min，膜厚d≈500nm；N层a-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RFPower＝50W，沉积时间t＝10min，膜厚d≈20nm；
所述的底电极层为利用PECVD沉积的微晶硅薄膜电池；其中P层μc-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/B2H6＝600/60/6sccm，衬底温度T＝250℃，射频功率RFPower＝35W，沉积时间t＝15min，膜厚d≈20nm；ia-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4＝600/60sccm，衬底温度T＝250℃，射频功率RFPower＝35W，沉积时间t＝90min，膜厚d≈500nm；na-Si:H薄膜PECVD工艺参数为：反应气体流量为H2/SiH4/PH3＝600/60/20sccm，衬底温度T＝200℃，射频功率RFPower＝50W，沉积时间t＝10min，膜厚d≈20nm。
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