CN106057643A - Semiconductor structure and method for preparing semiconductor structure - Google Patents
Semiconductor structure and method for preparing semiconductor structure Download PDFInfo
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- CN106057643A CN106057643A CN201610366371.0A CN201610366371A CN106057643A CN 106057643 A CN106057643 A CN 106057643A CN 201610366371 A CN201610366371 A CN 201610366371A CN 106057643 A CN106057643 A CN 106057643A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 191
- 238000000034 method Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000004544 sputter deposition Methods 0.000 claims abstract description 93
- 239000013078 crystal Substances 0.000 claims abstract description 72
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims abstract description 64
- 238000000151 deposition Methods 0.000 claims abstract description 52
- 230000008021 deposition Effects 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 229910000311 lanthanide oxide Inorganic materials 0.000 claims description 114
- 238000004062 sedimentation Methods 0.000 claims description 59
- 238000000137 annealing Methods 0.000 claims description 46
- 238000009792 diffusion process Methods 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 22
- 238000010884 ion-beam technique Methods 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 abstract description 20
- 230000001939 inductive effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 15
- 229910052761 rare earth metal Inorganic materials 0.000 description 14
- 150000002910 rare earth metals Chemical class 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000011835 investigation Methods 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002689 soil Substances 0.000 description 5
- 229910000601 superalloy Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- -1 rare earth oxygen Compound Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02524—Group 14 semiconducting materials
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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Abstract
The present invention provides a semiconductor structure and a method for preparing the semiconductor structure. The method specifically includes the following steps that: (1) a substrate is provided, wherein the substrate is formed by metal; (2) a rare earth oxide layer is formed on the upper surface of the substrate through sputtering deposition; and (3) a semiconductor layer is formed at one side of the rare earth oxide layer which is far away from the substrate, wherein the rare earth oxide layer and the semiconductor layer have crystal preferred orientation. With the method adopted, preparation cost can be reduced, a preparation process can be simplified, and the rare earth oxide structure having the crystal preferred orientation can be obtained; and the rare earth oxide layer is capable of inducing the formation of the semiconductor layer and making the lattice arrangement in the formed semiconductor layer have preferred orientation.
Description
Technical field
The present invention relates to semiconductor technology and field of semiconductor manufacture, specifically, the present invention relates to semiconductor structure
And the method preparing semiconductor structure.
Background technology
In technical field of semiconductors, solaode or light emitting diode (LED) are produced on metal, both may utilize
The electric conductivity that metal is good, may utilize again the low cost feature of metal substrate, it is also possible to utilize metallic film to have certain flexibility
Make the device with certain flexibility, therefore have a good application prospect.But, for better performances solaode or
For person LED, semi-conducting material therein typically requires as the polycrystalline that monocrystalline or crystal orientation concordance are good, crystalline substance the most therein
Body has preferred orientation.The method of epitaxial growth or sputtering sedimentation can be used at present to obtain semiconductive thin film in metal surface,
Semiconductive thin film prepared by these methods or for non-crystalline material, or be the polycrystalline material not having crystal preferred orientation, it is difficult to obtain
The semiconductive thin film that crystal preferred orientation is good, causes solaode or the poor performance of light emitting diode to be difficult to answer
With.
Therefore, semiconductor thin film structure on metal with good crystalline preferred orientation and preparation method thereof is related at present still
Have much room for improvement.
Summary of the invention
Inventor finds through further investigation and great many of experiments, by suitable sputter deposition craft, and can be at metal
On prepare the Oxide rare earth thin film with crystal preferred orientation, further, by controlling the lattice of rare earth oxide crystal
Constant so that it is and there is between common semiconductor crystalline material preferable Lattice Matching degree, thus ensure to be grown in this rare earth
The crystal preferred orientation that semiconductor layer on oxide crystal layer has had, such that it is able to be used for preparing high performance solar-electricity
The semiconductor device such as pond, light emitting diode.
It is contemplated that one of technical problem solved the most to a certain extent in correlation technique.To this end, the present invention
One purpose is to propose a kind of method preparing semiconductor structure, and the method uses the method for sputtering sedimentation, by sputtering
The control of condition, it is possible to form the lanthanide oxide layer with crystal preferred orientation.With utilize solid-phase epitaxial growth technology and
Metal organic chemical vapor deposition technology is compared, and sputtering sedimentation has with low cost, simple operation and other advantages.
In one aspect of the invention, the present invention proposes a kind of method preparing semiconductor structure.The method includes:
(1) providing substrate, described substrate is metal；(2) upper surface at described substrate passes through sputtering sedimentation, forms rare earth oxide
Layer；And (3) described lanthanide oxide layer away from described substrate side formed semiconductor layer, wherein, described rare-earth oxidation
Nitride layer and described semiconductor layer have crystal preferred orientation.Thus, it is possible to reduction preparation cost, simplify preparation technology, and obtain
Must have the rare earth oxide structure of crystal preferred orientation.Further, lanthanide oxide layer can the formation of induced semiconductor layer, make
Lattice arrangement in the semiconductor layer formed has preferred orientation.Meanwhile, lanthanide oxide layer can also stop in substrate miscellaneous
Matter is diffused in semiconductor layer, is effectively improved the performance of semiconductor layer.
According to embodiments of the invention, step (2) farther includes: by sputtering sedimentation in the upper surface shape of described substrate
Become rare earth oxide mixture, described rare earth oxide mixture is carried out the first annealing, in order to obtain described rare earth oxygen
Compound layer.Thus, it is possible to simplify the preparation technology of sputter deposition process further, reduce the requirement to depositing device, thus can
To reduce production cost further.
According to embodiments of the invention, after step (3), farther include: (4) are to described substrate, lanthanide oxide layer
And semiconductor layer carries out the second annealing.Thus, it is possible to by the second annealing, improve further semiconductor layer and/
Or the crystalline quality of lanthanide oxide layer.
According to embodiments of the invention, after step (1) before step (2), farther include: upper at described substrate
Surface forms diffusion impervious layer.Thus, it is possible to alleviate the diffusion negative effect for this semiconductor structure performance of metal substrate.
According to embodiments of the invention, described diffusion impervious layer includes Al2O3、ZrO2、Y2O3In one or more.By
This, can improve the remission effect that diffusion impervious layer spreads for metal substrate further.
According to embodiments of the invention, described substrate is high temperature alloy.Thus, on the one hand prevent metal substrate follow-up
Pyroprocess melts, and on the other hand can alleviate the diffusion in hot environment of the substrate metal element, and then be possible to prevent substrate
In metallic element diffusion and the performance of this semiconductor structure is adversely affected.
According to embodiments of the invention, described semiconductor layer includes the one in Si, Ge, Group III-V compound semiconductor
Or it is multiple.Thus, it is possible to make this semiconductor structure be applied in the semiconductor device needed for different application scene, common application
Can be solaode or light emitting diode.
According to embodiments of the invention, described sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Utilize magnetic
Control sputtering or ion beam sputtering can preferably control the crystal structure of the rare earth oxide of sedimentation rate and deposition, thus
Advantageously form lanthanide oxide layer.
According to embodiments of the invention, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
Thus, it is possible to utilize pulsed sputtering sedimentation or ion beam aided sputtering deposition to control the speed of deposition, improve the dilute of acquisition
The crystalline quality of soil oxide skin(coating).
According to embodiments of the invention, described rare earth oxide includes: (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1- xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In one or more, wherein x
Span is 0-1.Those skilled in the art can select in above-mentioned scope according to the specific requirement to this semiconductor structure
Suitable rare earth oxide deposits, it is achieved the regulation and control to this semiconductor structure physical and chemical performance, partly leads such that it is able to extend this
The range of application of body structure.
According to embodiments of the invention, lattice paprmeter a of described lanthanide oxide layer is normal with the lattice of described semiconductor layer
The relation of number b is: a=(2 ± c) b, wherein c is lattice constant mismatch rate, 0≤c≤15%.The lattice of part rare earth oxide
Constant is about the twice of common semiconductor material lattice constant, and the lattice paprmeter of rare earth oxide can pass through composition regulation,
By the relation between regulation rare earth oxide and the lattice paprmeter of semiconductor layer, make a ≈ 2b, rare earth oxide can be improved
Lattice Matching degree between layer and semiconductor layer.
According to embodiments of the invention, the temperature of described first annealing and the second annealing is separately
600～1200 degrees Celsius.Thus, it is possible to improve lanthanide oxide layer and the crystalline quality of semiconductor layer further.
According to embodiments of the invention, in step (2), during described sputtering sedimentation, underlayer temperature is not less than 400 degrees Celsius.By
This, can be easily by heating substrate, it is thus achieved that have the lanthanide oxide layer of crystal preferred orientation, such that it is able to fall
The requirement to equipment of the low deposition step, simplifies preparation technology, reduces production cost.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to embodiments of the invention, should be partly
Conductor structure includes: substrate, and described substrate is metal；Lanthanide oxide layer, described lanthanide oxide layer is formed at described substrate
Upper surface, described lanthanide oxide layer has crystal preferred orientation；And semiconductor layer, described semiconductor layer is formed at described dilute
Soil oxide skin(coating) is away from the side of described substrate, and described semiconductor layer has crystal preferred orientation.There is crystal preferred orientation
Rare earth oxide can induce the crystallization situation of the semiconductor layer formed on lanthanide oxide layer so that it is also has selecting of crystal
Excellent orientation, meanwhile, during lanthanide oxide layer can also stop that in substrate, impurity is diffused into semiconductor layer, is effectively improved semiconductor layer
Performance, thus beneficially this semiconductor structure of later use constitute the structure such as solaode or light emitting diode.
According to embodiments of the invention, described substrate is high temperature alloy.Thus, on the one hand prevent metal substrate follow-up
Pyroprocess melts, and on the other hand can alleviate the diffusion in hot environment of the substrate metal element, and then be possible to prevent substrate
In metallic element diffusion and the performance of this semiconductor structure is adversely affected.
According to embodiments of the invention, this semiconductor structure farther includes: diffusion impervious layer, described diffusion impervious layer shape
Become between described substrate and described lanthanide oxide layer.Thus, it is possible to alleviate the diffusion of metal substrate for this quasiconductor
The negative effect of structural behaviour.
According to embodiments of the invention, described diffusion impervious layer includes Al2O3、ZrO2、Y2O3In one or more.By
This, can improve the remission effect that diffusion impervious layer spreads for metal substrate further.
According to embodiments of the invention, described rare earth oxide includes: (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1- xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In one or more, wherein x
Span is 0-1.Those skilled in the art can select in above-mentioned scope according to the specific requirement to this semiconductor structure
Suitable rare earth oxide deposits, it is achieved the regulation and control to this semiconductor structure physical and chemical performance, partly leads such that it is able to extend this
The range of application of body structure.
Lattice paprmeter b according to embodiments of the invention, lattice paprmeter a of described rare earth oxide and described semiconductor layer
Relation be: a=(2 ± c) b, wherein c is lattice constant mismatch rate, 0≤c≤15%.The lattice paprmeter of part rare earth oxide
It is about the twice of common semiconductor material lattice constant, and the lattice paprmeter of rare earth oxide can pass through composition regulation, passes through
Regulation rare earth oxide and the lattice paprmeter of semiconductor layer between relation, make a ≈ 2b, can improve lanthanide oxide layer with
And the Lattice Matching degree between semiconductor layer.
According to embodiments of the invention, the halfwidth of the XRD diffraction maximum of described lanthanide oxide layer (222) crystal face is less than 5
Degree.The halfwidth controlling XRD diffraction maximum is conducive to improving the crystalline quality of this lanthanide oxide layer.
According to embodiments of the invention, described semiconductor layer be the one in Si, Ge, Group III-V compound semiconductor or
Multiple.Thus, it is possible to make this semiconductor structure be applied in the semiconductor device needed for different application scene, common application can
Think solaode or light emitting diode.
According to embodiments of the invention, described lanthanide oxide layer is formed by sputtering sedimentation.Thus, it is possible to protecting
While card lanthanide oxide layer quality, reduce preparation cost, simplify preparation technology.
According to embodiments of the invention, described lanthanide oxide layer and described semiconductor layer at least one be by sputtering
Deposition and annealing are formed.Thus, it is possible to simplify the preparation technology of sputter deposition process further, reduce depositing device
Requirement, such that it is able to reduce production cost further.
According to embodiments of the invention, described sputtering sedimentation is magnetron sputtering deposition or ion beam sputter depositing.Utilize magnetic
Control sputtering or ion beam sputtering can preferably control the crystal structure of the rare earth oxide of sedimentation rate and deposition, thus
Advantageously form lanthanide oxide layer.
According to embodiments of the invention, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
Thus, it is possible to utilize pulsed sputtering sedimentation or ion beam aided sputtering deposition to control the speed of deposition, improve the dilute of acquisition
The crystalline quality of soil oxide skin(coating).
According to embodiments of the invention, during described sputtering sedimentation, underlayer temperature is more than 400 degrees Celsius.Thus, it is possible to it is easy
Ground is by heating substrate, it is thus achieved that have the lanthanide oxide layer of crystal preferred orientation, such that it is able to reduce deposition step
Requirement to equipment, simplifies preparation technology, reduces production cost.
Accompanying drawing explanation
Fig. 1 is the flow chart of the method preparing semiconductor structure according to an embodiment of the invention；
Fig. 2 is the structural representation of semiconductor structure according to an embodiment of the invention；And
Fig. 3 is the structural representation of semiconductor structure in accordance with another embodiment of the present invention.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most from start to finish
Same or similar label represents same or similar element or has the element of same or like function.Below with reference to attached
The embodiment that figure describes is exemplary, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " on ", the orientation of the instruction such as D score or position relationship be base
In orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description rather than instruction or hint
The device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that to this
The restriction of invention.
In one aspect of the invention, the present invention proposes a kind of method preparing semiconductor structure.Generally, sputtering is used
Method be hardly formed crystal preferred orientation, the most on the metallic substrate, general form polycrystalline or impalpable structure more.Invention
People finds through further investigation and great many of experiments, by modes such as underlayer temperatures when reduction sputter rate, raising sputtering, or
Processed by subsequent anneal, improve the crystalline quality of the rare earth oxide that sputtering is formed, thus realize utilizing sputtering to obtain crystal
Preferred orientation.Rare earth oxide crystal anisotropy of the speed of growth when epitaxial growth, i.e. rare earth oxygen is make use of during this
Thin film is when deposition, and the deposition growth rate in some crystal orientation is significantly faster than that other crystal face, and at high temperature sputtering sedimentation with move back
During fire, rare earth oxide has obvious crystal recrystallization, and the big crystal grain with preferred orientation is constantly grown up so that non-
The little crystal grain of preferred orientation is fewer and feweri to be even disappeared completely.In the present invention, " preferred orientation of crystal " refers to that crystal has and selects
In excellent orientation, i.e. lanthanide oxide layer, a range of crystal orientation reaches unanimity, and the most also includes that monocrystalline is (each in crystal
Place's orientation is completely the same).Specifically, according to embodiments of the invention, with reference to Fig. 1, the method includes:
S100: substrate is provided
According to embodiments of the invention, in this step, it is provided that substrate is to form semiconductor structure.Specifically, this lining
The end is metal.It should be noted that the concrete material of substrate or composition are not particularly limited, it can be the gold of single-element composition
Belong to substrate, it is also possible to for alloy substrate.Concrete, according to embodiments of the invention, this substrate can be that high temperature alloy is formed.
In the present invention, " high temperature alloy " refers to can be at 600 degrees Celsius of metal materials used above, for example, it is possible to close for iron-based high temp
Gold, nickel base superalloy or cobalt base superalloy.It is for instance possible to use nickel base superalloy is constituted according to embodiments of the present invention
Substrate.It will be appreciated to those of skill in the art that the quality of semiconductor structure in order to improve preparation, carry out follow-up step
Before Zhou, substrate can be carried out, in order to remove the impurity such as the oils and fats of substrate surface, dust, such that it is able to improve follow-up
The deposition effect of step.
According to embodiments of the invention, the metallic element in order to prevent in substrate in subsequent preparation process there is diffusion and
Affecting the performance of the semiconductor structure utilizing the method to prepare, the method can further include:
Upper surface at substrate forms diffusion impervious layer, formed the method for diffusion impervious layer can be conventional sputtering or
Chemical vapor deposition method etc..Thus, the lanthanide oxide layer except being subsequently formed can stop that in substrate, impurity is diffused into half
Conductor layer China and foreign countries, diffusion impervious layer can alleviate the diffusion negative shadow for this semiconductor structure performance of metal substrate further
Ring.Specifically, diffusion impervious layer can include Al2O3、ZrO2、Y2O3In one or more.Thus, it is possible to improve expansion further
Dissipate the remission effect that barrier layer is spread for metal substrate.
S200: form lanthanide oxide layer
According to embodiments of the invention, in this step, the upper surface at substrate passes through sputtering sedimentation, forms rare-earth oxidation
Nitride layer.Thus, it is possible to reduction preparation cost, simplify preparation technology, and obtain the rare earth oxide knot with crystal preferred orientation
Structure.It will be appreciated to those of skill in the art that before forming lanthanide oxide layer, as the upper surface at substrate is pre-formed
Have diffusion impervious layer, then this lanthanide oxide layer is formed at the upper surface of diffusion impervious layer, and in other words, diffusion impervious layer is formed
Between lanthanide oxide layer and substrate.
Sputter deposition process is described in detail by the specific embodiment below according to the present invention.
According to embodiments of the invention, rare earth oxide may include that (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1- xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In one or more, wherein x
Span is 0-1.Those skilled in the art can select in above-mentioned scope according to the specific requirement to this semiconductor structure
Suitable rare earth oxide deposits, it is achieved the regulation and control to this semiconductor structure physical and chemical performance, partly leads such that it is able to extend this
The range of application of body structure.
According to embodiments of the invention, magnetron sputtering deposition or ion beam sputter depositing can be used to form rare earth oxide
Layer.Inventor finds through great many of experiments, and the crystal structure of the speed of the sputtering sedimentation rare earth oxide to being formed has important
Impact.Sputtering sedimentation speed advantageously forms the lanthanide oxide layer with crystal preferred orientation slowly.Utilize magnetron sputtering or
Ion beam sputtering can preferably control sedimentation rate, such that it is able to control the crystal structure of the rare earth oxide of deposition, is formed
There is crystal preferred orientation and the lanthanide oxide layer of the polycrystalline of non-confusion arrangement.According to embodiments of the invention, sputtering sedimentation
Can also be pulsed sputtering sedimentation or ion beam aided sputtering deposition.Pulsed sputtering sedimentation is owing to have employed pulse power generation
Carry out sputtering sedimentation for DC source, can effectively control deposition velocity, the migration of enhanced deposition atom, promote that crystal preferentially takes
To formation；Use ion beam aided sputtering deposition, utilize Assisted by Ion Beam bombardment deposition substrate (i.e. metal substrate), Ke Yiti
The energy of high deposition aggregated particle and stability, eliminate defect and the crystal grain of non-preferred orientation of deposition surface, favorably simultaneously
Quality in the lanthanide oxide layer improving formation of deposits.Thus, it is possible to utilize pulsed sputtering sedimentation or Assisted by Ion Beam
Sputtering sedimentation improves the crystalline quality of the lanthanide oxide layer obtained.
According to embodiments of the invention, in this step, can be formed by substrate being heated in sputter procedure
Lanthanide oxide layer.Specifically, when can make sputtering sedimentation by heating, underlayer temperature is not less than 400 degrees Celsius.Inventor's warp
Cross further investigation and great many of experiments finds, for rare earth oxide, when underlayer temperature is less than 300 degrees Celsius when deposited, shape
The lanthanide oxide layer become mostly is polycrystalline structure.When underlayer temperature is increased to 300～600 degrees Celsius, advantageously form cube
The crystal preferred orientation of crystallographic system.And continue to raise underlayer temperature, then may cause the crystal structure of hexagonal galaxy.Specifically, root
Underlayer temperature can be made to be 400-500 degrees centigrade according to embodiments of the invention, optimizing temperature is 500 degrees Celsius.Further, exist
Carry out sputtering sedimentation under above-mentioned heating-up temperature, also metal substrate will not be impacted.Thus, it is possible to easily by substrate
Heat, it is thus achieved that lanthanide oxide layer, such that it is able to reduce the deposition step requirement to equipment, simplify preparation technology, reduce
Production cost.
According to other embodiments of the present invention, in this step, it is also possible to by normal temperatures target being sputtered
Deposition, such as, carries out magnetron sputtering, and substrate does not heats, and the upper surface formation of deposits at substrate has polycrystalline or non crystalline structure
Rare earth oxide mixture.It should be noted that in the present invention, term " rare earth oxide mixture " refers in particular to room temperature or low temperature
Under rare earth oxide target carried out sputtering sedimentation formation, there is polycrystalline structure, but take without preferable preferred orientation, i.e. lattice
To tending not to consistent structure.Then, the rare earth oxide mixture formed is made annealing treatment so that it is be converted into have and select
The crystal structure of excellent orientation, such that it is able to improve the crystalline quality of rare earth oxide mixture, it is thus achieved that lanthanide oxide layer.Invention
People finds through great many of experiments, and the time of annealing is the longest, then the crystal mass of lanthanide oxide layer is the best.Thus, it is possible to it is easy
Ground obtains lanthanide oxide layer by annealing, is conducive to reducing further the deposition step requirement to equipment, simplifies preparation technology,
Reduce production cost.According to the still other embodiments of the present invention, in this step, heavy by high temperature target being carried out sputtering
Long-pending, such as, to silicon during magnetron sputtering, can make underlayer temperature is 400-500 degrees centigrade, at substrate
Upper surface formation of deposits there is the lanthanide oxide layer of crystal preferred orientation.In order to improve the matter of lanthanide oxide layer further
Amount, according to embodiments of the invention, it is also possible to the lanthanide oxide layer formed is carried out the first annealing, such that it is able to enter one
Step improves the crystalline quality of lanthanide oxide layer, it is thus achieved that high-quality have crystal preferred orientation the most high-quality monocrystalline knot
Structure.According to some embodiments of the present invention, the temperature of the first annealing can be 600～1200 degrees Celsius.According to the present invention
Other embodiments, first annealing temperature can also be 800～1000 degrees Celsius.Thus, it is possible to improve further
The crystalline quality of lanthanide oxide layer.
Utilizing the semiconductor structure that the method obtains, lanthanide oxide layer has preferable crystalline quality, rare earth oxide
The halfwidth of the XRD diffraction maximum of layer (222) crystal face can be less than 5 degree, it is ensured that rare earth oxide has preferable crystalline quality.
Further, the method has the advantage that technique is simple, with low cost.
S300: form semiconductor layer
According to embodiments of the invention, in this step, the upper surface at lanthanide oxide layer forms semiconductor layer.Namely
To say, lanthanide oxide layer away from substrate side formed semiconductor layer.Owing to lanthanide oxide layer has preferable crystal
Preferred orientation, when therefore forming semiconductor layer on lanthanide oxide layer, it is possible to the formation of induced semiconductor layer, makes the half of formation
Lattice arrangement in conductor layer also has preferred orientation.Thus, it is possible to optimize the semiconductor structure that the method is formed.
It should be noted that in this step, the concrete grammar forming semiconductor layer is not particularly limited.For example, it is possible to
Sputtering sedimentation and the first annealing is used to form the semiconductor layer with preferred orientation, or directly by high temperature sputtering sedimentation shape
Become, it is also possible to use the method for chemical gaseous phase deposition to form semiconductor layer.Additionally, the concrete composition of semiconductor layer is not the most by especially
Limiting, those skilled in the art can select according to practical situation.Such as, according to a particular embodiment of the invention, partly lead
Body layer is to be formed by by one or more materials in Si, Ge, Group III-V compound semiconductor.In other words, formation is partly led
The material of body layer can include the combination of one or more in the semi-conducting material that Si, Ge, III-V compound are formed.Such as,
When in this semiconductor layer containing Si time, it is thus achieved that semiconductor structure may be used for preparing solaode；When in this semiconductor layer
During containing III-V element, such as, time in semiconductor layer containing nitride (including GaN, InGaN, AlGaN, AlN etc.), quasiconductor
Structure can be applied to LED structure as luminescent material；When in semiconductor layer containing compositions such as GaAs, InGaAs, AlGaAs,
This semiconductor structure can apply to solaode.
Inventor finds through further investigation and great many of experiments, by the lattice paprmeter and half of regulation rare earth oxide
Relation between the lattice paprmeter of conductor layer, can improve the Lattice Matching journey between lanthanide oxide layer and semiconductor layer
Degree, thus improve the performance of this semiconductor structure.Specifically, lattice paprmeter a of rare earth oxide and the lattice of semiconductor layer are normal
The relation of number b is: a=(2 ± c) b, wherein c is lattice constant mismatch rate, 0≤c≤15%.Those skilled in the art can root
Composition according to the concrete constituent adjustment lanthanide oxide layer of the semiconductor layer needed, it is also possible to according to the lanthanide oxide layer formed
This step of concrete constituent adjustment in the composition of semiconductor layer that formed.
In order to improve the crystal preferred orientation of rare earth oxide and semiconductor layer further, the method can be wrapped further
Include:
Substrate, lanthanide oxide layer and semiconductor layer are carried out the second annealing.Specifically, according to the reality of the present invention
Executing example, the temperature of the second annealing can be 600～1200 degrees Celsius.According to other embodiments of the present invention, second moves back
The temperature that fire processes can also be 800～1000 degrees Celsius.Thus, it is possible to improve lanthanide oxide layer and semiconductor layer further
Crystalline quality, improve its crystal preferred orientation.It will be appreciated to those of skill in the art that ought need to carry out above-mentioned second moves back
When fire processes, need to use resistant to elevated temperatures high temperature alloy as substrate.Inventor finds through great many of experiments, anneals for a long time
Process can make lanthanide oxide layer and semiconductor layer recrystallization, forms the preferred orientation of crystal.Therefore, to above-mentioned semiconductor junction
Structure carries out the second annealing and is conducive to improving lanthanide oxide layer and the crystalline quality of semiconductor layer.Those skilled in the art
It is understood that the method for sputtering can also be utilized first to form the rare earth without preferred orientation on high temperature alloy substrate
Oxide skin(coating) and semiconductor layer, recycle long second annealing and make lanthanide oxide layer and semiconductor layer be formed
Preferred orientation, this kind of situation is also among protection scope of the present invention.It should be noted that in the present invention, " long
Two annealings " in, the concrete time of the second annealing is not particularly limited, and has crystal preferred orientation as long as can be formed
Lanthanide oxide layer and semiconductor layer, or the crystal structure quality of lanthanide oxide layer and semiconductor layer can be improved i.e.
Can.According to a particular embodiment of the invention, the concrete time of the second annealing can be 1～20 hour.Annealing temperature is the highest,
Then annealing time can suitably shorten.
In another aspect of this invention, the present invention proposes a kind of semiconductor structure.According to embodiments of the invention, reference
Fig. 2, this semiconductor structure includes: substrate 100, lanthanide oxide layer 200 and semiconductor layer 300.Lanthanide oxide layer 200 shape
Becoming the upper surface at substrate 100, semiconductor layer 300 is formed at the upper surface of lanthanide oxide layer 200, and lanthanide oxide layer
200 and semiconductor layer 300 there is crystal preferred orientation.Wherein, substrate 100 is formed by metal.There is crystal preferentially take
To rare earth oxide can improve the Lattice Matching degree between lanthanide oxide layer and substrate, and beneficially later use
This semiconductor structure constitutes the electronic device such as solaode, light emitting diode.
Specifically, substrate 100 and lanthanide oxide layer 200 can have and previously described semiconductor structure of preparing
Substrate in method or the identical feature of lanthanide oxide layer, do not repeat them here.Such as, substrate can be high temperature alloy, and
Cut into suitable size.The rare earth oxide forming lanthanide oxide layer 200 can include (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1-xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In one or more,
Wherein the span of x is 0-1.Those skilled in the art can be according to the specific requirement to this semiconductor structure, from above-mentioned model
The rare earth oxide enclosing interior selection suitable deposits, it is achieved the regulation and control to this semiconductor structure physical and chemical performance, such that it is able to expand
Open up the range of application of this semiconductor structure.
According to embodiments of the invention, lanthanide oxide layer 200 is formed by sputtering sedimentation.Generally, sputtering is used
Method be hardly formed crystal preferred orientation structure, much more general form polycrystalline or impalpable structure.Inventor is through further investigation
And great many of experiments finds, by modes such as underlayer temperatures when reduction sputter rate, raising sputtering, or by subsequent anneal
Reason, improves the crystalline quality of the rare earth oxide that sputtering is formed, it is possible to achieve utilize sputtering to obtain crystal preferred orientation structure.By
This, can reduce preparation cost while ensureing lanthanide oxide layer quality, simplify preparation technology.Specifically, can pass through
Pulsed sputtering sedimentation forms lanthanide oxide layer 200.Specifically, magnetron sputtering deposition or ion beam sputter depositing can be used
Form lanthanide oxide layer.Inventor finds through great many of experiments, the crystalline substance of the speed of the sputtering sedimentation rare earth oxide to being formed
Body structure has material impact.Sputtering sedimentation speed advantageously forms lanthanide oxide layer slowly.Utilize magnetron sputtering or ion
Beam sputtering can preferably control sedimentation rate, such that it is able to control the crystal structure of the rare earth oxide of deposition, forms rare earth
Oxide skin(coating).According to embodiments of the invention, sputtering sedimentation can also be pulsed sputtering sedimentation or Assisted by Ion Beam sputtering heavy
Long-pending.Pulsed sputtering sedimentation replaces DC source to carry out sputtering sedimentation owing to have employed the pulse power, can effectively control deposition
Speed, the migration of enhanced deposition atom, promote the formation of crystal preferred orientation；Use ion beam aided sputtering deposition, utilize from
Son bundle auxiliary bombardment deposition substrate (i.e. substrate 100), can improve energy and the stability of deposition aggregated particle, eliminate simultaneously
The defect of deposition surface and the crystal grain of non-preferred orientation, be conducive to improving the quality of the lanthanide oxide layer 200 of formation of deposits.By
This, it is possible to use pulsed sputtering sedimentation or ion beam aided sputtering deposition improve the knot of the lanthanide oxide layer 200 obtained
Crystalloid amount.
According to embodiments of the invention, when sputtering sedimentation, substrate can be heated, make the temperature of substrate 100 be more than
400 degrees Celsius.Thus, it is possible to improve the crystalline quality of lanthanide oxide layer 200.The temperature of substrate 100 is with previously mentioned herein
The method preparing semiconductor structure in temperature that substrate is heated identical, during about sputtering sedimentation, substrate is heated
Temperature, be previously detailed description, do not repeat them here.Or, according to other embodiments of the present invention, dilute
Soil oxide skin(coating) 200 can be formed by sputtering sedimentation and annealing.Specifically, can at room temperature complete to sputter
Journey, forms rare earth oxide mixture, then by the first annealing, improves the crystalline quality of rare earth oxide mixture,
It is hereby achieved that lanthanide oxide layer 200.According to some embodiments of the present invention, the temperature of the first annealing can be
600～1200 degrees Celsius.According to other embodiments of the present invention, the temperature of the first annealing can also be 800～1000
Degree Celsius.Thus, it is possible to improve the crystalline quality of lanthanide oxide layer further.
According to embodiments of the invention, the halfwidth of the XRD diffraction maximum of (222) crystal face of lanthanide oxide layer 200 is less than 5
Degree.Thus, it is possible to ensure that lanthanide oxide layer 200 has preferable crystalline quality, formed such that it is able to reduce rare earth oxide
Lanthanide oxide layer 200 in defect, be conducive to improving and utilize making of classes of semiconductors device prepared by this semiconductor structure
Use function.
According to embodiments of the invention, in order to improve the performance of this semiconductor structure further, with reference to Fig. 3, this quasiconductor
Structure can further include: diffusion impervious layer 400.Specifically, diffusion impervious layer 400 is formed at substrate 100 and rare earth
Between oxide skin(coating) 200.In other words, the upper surface at substrate 100 has diffusion impervious layer 400, lanthanide oxide layer 200 shape
Become on the upper surface of diffusion impervious layer 400.Thus, it is possible to utilize diffusion impervious layer 400 alleviate the diffusion of metal substrate for
The negative effect of this semiconductor structure performance.Specifically, diffusion impervious layer 400 can include Al2O3、ZrO2、Y2O3In one
Or it is multiple.Thus, it is possible to improve the remission effect that diffusion impervious layer spreads for metal substrate further.
According to embodiments of the invention, semiconductor layer 300 is formed at the upper surface of lanthanide oxide layer 200.In other words,
Lanthanide oxide layer 200 away from substrate 100 side formed semiconductor layer 300.According to a particular embodiment of the invention, partly lead
Body layer 300 is to be formed by containing the compound selected from Si, Ge, III-V element.In other words, the material of semiconductor layer 300 is formed
Material can be one or more in Si, Ge, Group III-V compound semiconductor.Specifically, semiconductor layer 300 can contain
Si, Ge, nitride (including GaN, InGaN, AlGaN, AlN etc.), GaAs, InGaAs, AlGaAs etc..Due to lanthanide oxide layer
200 have preferable crystal preferred orientation, when therefore forming semiconductor layer 300 on lanthanide oxide layer 200, it is possible to utilize dilute
The formation of the preferred orientation induced semiconductor layer 300 of soil oxide skin(coating) 200, makes the lattice arrangement in the semiconductor layer 300 of formation
Also there is preferred orientation.Thus, it is thus achieved that there is the semiconductor layer 300 of preferred orientation.The concrete forming method of semiconductor layer 300
With the method forming semiconductor layer in the previously described method preparing semiconductor structure, there is identical feature and advantage,
This repeats no more.According to some embodiments of the present invention, semiconductor layer 300 can also be by sputtering sedimentation and annealing shape
Become.Inventor finds through great many of experiments, and annealing can make lanthanide oxide layer and semiconductor layer tie again for a long time
Crystalline substance, forms the preferred orientation of crystal.Therefore, it can, after forming semiconductor layer 300, above-mentioned semiconductor structure be carried out second
Annealing, in order to improve semiconductor layer 300 and the crystalline quality of lanthanide oxide layer 200.Those skilled in the art are permissible
It is understood by, in the present invention, it is also possible to first the method for utilization sputtering is formed not have on high temperature alloy substrate and preferentially take
To lanthanide oxide layer and semiconductor layer, recycle long second annealing, improve lanthanide oxide layer and
The crystalline quality of semiconductor layer, forms lanthanide oxide layer 200 according to embodiments of the present invention and semiconductor layer 300.Need
Bright, in the present invention, in " long second annealing ", the concrete time of the second annealing is limited the most especially
System, as long as lanthanide oxide layer and the semiconductor layer with crystal preferred orientation can be formed, or can improve rare-earth oxidation
The crystal structure quality of nitride layer and semiconductor layer.According to a particular embodiment of the invention, second annealing concrete time
Between can be 1～20 hour.It will be appreciated to those of skill in the art that annealing temperature is the highest, then annealing time can suitably contract
Short.
The lattice paprmeter of part rare earth oxide is about the twice of common semiconductor material lattice constant, and rare-earth oxidation
The lattice paprmeter of thing can pass through composition regulation.Inventor finds through further investigation and great many of experiments, by regulation rare earth oxygen
Relation between the lattice paprmeter of compound and the lattice paprmeter of semiconductor layer, can improve lanthanide oxide layer and quasiconductor
Lattice Matching degree between Ceng, thus improve the performance of this semiconductor structure.Specifically, lattice paprmeter a of rare earth oxide
With the relation of lattice paprmeter b of semiconductor layer being: a=(2 ± c) b, wherein c is lattice constant mismatch rate, 0≤c≤15%.This
Skilled person can the composition of concrete constituent adjustment lanthanide oxide layer of semiconductor layer as required, it is also possible to according to
The composition of the semiconductor layer formed in this step of concrete constituent adjustment of the lanthanide oxide layer formed.By regulation rare-earth oxidation
Relation between thing and the lattice paprmeter of semiconductor layer, makes a ≈ 2b, can improve lanthanide oxide layer and semiconductor layer it
Between Lattice Matching degree, thus improve the crystalline quality of semiconductor layer.
It should be noted that the previously described semiconductor structure of the present invention can apply to prepare electronic device.Due to this
Containing previously described semiconductor structure in electronic device, therefore this electronic device has the complete of previously described semiconductor structure
Portion's feature and advantage, do not repeat them here.In simple terms, this electronic device have preparation method easy, with low cost, without
The advantages such as high equipment.Further, the semiconductor structure of this electronic device has the rare-earth oxidation containing crystal preferred orientation
Nitride layer, such that it is able to improve the integral device performance of this electronic device.It should be noted that in the present invention, electronic device
Concrete kind is not particularly limited, and those skilled in the art can select according to the particular make-up in semiconductor structure.Example
As, when in the semiconductor layer of this semiconductor structure containing Si, may be used for preparing solaode；When this semiconductor structure
Time in semiconductor layer containing III-V element, such as, semiconductor layer (includes GaN, InGaN, AlGaN, AlN containing nitride
Deng) time, LED structure can be applied to as luminescent material；When in the semiconductor layer of semiconductor structure containing GaAs, InGaAs,
During the compositions such as AlGaAs, this semiconductor structure can apply to solaode.
Below by specific embodiment, the present invention will be described, it should be noted that following specific embodiment is only
It is for illustrative purposes, and limits the scope of the present invention never in any form, it addition, if no special instructions, the most specifically remember
The method of carrier strip part or step is conventional method, and the reagent and the material that are used the most commercially obtain.Wherein, raw
Long equipment uses as LAB18 magnetic control sputtering device.
Embodiment: nickel base superalloy Grown (Gd1-xNdx)2O3Lanthanide oxide layer and Ge semiconductor layer
Use nickel base superalloy (GH3536) as substrate, Dineodymium trioxide (Nd2O3) and Gadolinia. (Gd2O3) powder mixed
Compound (mass ratio 5:1) is sputtering target material.In advance substrate is carried out before deposition.
Select sputtering power 200W, vacuum 1E-7Torr, Sputtering Ar Pressure 10mtorr, underlayer temperature 450 degrees Celsius, control
About speed of growth 30nm/h processed.Obtaining rare earth oxide layer thickness is 10nm.Subsequently, the thin film obtained sputtering carries out nitrogen
Make annealing treatment under atmosphere, annealing temperature 1000 degrees Celsius, annealing time 2 hours.
The thick lanthanide oxide layer of one layer of about 10nm is formed at substrate surface.This lanthanide oxide layer has preferable crystalline substance
Body preferred orientation.XRD analysis shows, the halfwidth at its (222) peak is less than 3.5 degree, illustrates that Oxide rare earth thin film has relatively
Good crystal preferred orientation.
After utilizing sputtering to obtain lanthanide oxide layer, continue with sputtering technology, rare earth oxide sputters shape
Becoming 1 micron of thick Ge thin layer, subsequently, the thin film obtaining sputtering carries out making annealing treatment under nitrogen atmosphere, and annealing temperature 800 is Celsius
Degree, annealing time 2 hours.
By showing the XRD analysis of the Ge thin film obtained, the halfwidth at its (004) peak is less than 5 degree, illustrates that Ge thin film has
There is preferable crystal preferred orientation.
In the description of this specification, reference term " embodiment ", " some embodiments ", " example ", " specifically show
Example " or the description of " some examples " etc. means to combine this embodiment or example describes specific features, structure, material or spy
Point is contained at least one embodiment or the example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.And, the specific features of description, structure, material or feature can be in office
One or more embodiments or example combine in an appropriate manner.Additionally, in the case of the most conflicting, the skill of this area
The feature of the different embodiments described in this specification or example and different embodiment or example can be tied by art personnel
Close and combination.
Additionally, in the present invention, term " first ", " second " are only used for describing purpose, and it is not intended that indicate or dark
Show relative importance or the implicit quantity indicating indicated technical characteristic.Thus, " first ", the feature of " second " are defined
Can express or implicitly include at least one this feature.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is example
Property, it is impossible to being interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, revises, replaces and modification.
Claims (22)
1. the method preparing semiconductor structure, it is characterised in that including:
(1) providing substrate, described substrate is metal；
(2) upper surface at described substrate passes through sputtering sedimentation, forms lanthanide oxide layer；And
(3) described lanthanide oxide layer away from described substrate side formed semiconductor layer,
Wherein, described lanthanide oxide layer and described semiconductor layer have crystal preferred orientation.
Method the most according to claim 1, it is characterised in that step (2) farther includes:
Rare earth oxide mixture is formed, to described rare earth oxide mixture at the upper surface of described substrate by sputtering sedimentation
Carry out the first annealing, in order to obtain described lanthanide oxide layer.
Method the most according to claim 1 and 2, it is characterised in that after step (3), farther include:
(4) described substrate, lanthanide oxide layer and semiconductor layer are carried out the second annealing.
Method the most according to claim 1, it is characterised in that after step (1) before step (2), farther include:
Upper surface at described substrate forms diffusion impervious layer.
Method the most according to claim 4, it is characterised in that described diffusion impervious layer includes Al2O3、ZrO2、Y2O3In
One or more.
6. according to the method described in any one of claim 1-4, it is characterised in that described substrate is high temperature alloy.
7. according to the method described in any one of claim 1-4, it is characterised in that described semiconductor layer includes Si, Ge, III-V
One or more in compound semiconductor.
8. according to the method described in any one of claim 1-4, it is characterised in that described sputtering sedimentation be magnetron sputtering deposition or
Ion beam sputter depositing；
Optionally, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
9. according to the method described in any one of claim 1-4, it is characterised in that described rare earth oxide includes: (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1-xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In
One or more, wherein the span of x is 0-1.
10. according to the method described in any one of claim 1-4, it is characterised in that lattice paprmeter a of described lanthanide oxide layer
With the relation of lattice paprmeter b of described semiconductor layer being: a=(2 ± c) b, wherein c is lattice constant mismatch rate, 0≤c≤
15%.
11. according to the method in claim 2 or 3, it is characterised in that described first annealing and the second annealing
Temperature be separately 600～1200 degrees Celsius.
12. according to the method described in claim 1-4, it is characterised in that in step (2), underlayer temperature during described sputtering sedimentation
Not less than 400 degrees Celsius.
13. 1 kinds of semiconductor structures, it is characterised in that including:
Substrate, described substrate is metal；
Lanthanide oxide layer, described lanthanide oxide layer is formed at the upper surface of described substrate, and described lanthanide oxide layer has
Crystal preferred orientation；With
Semiconductor layer, described semiconductor layer is formed at the described lanthanide oxide layer side away from described substrate, described quasiconductor
Layer has crystal preferred orientation.
14. semiconductor structures according to claim 13, it is characterised in that described substrate is high temperature alloy.
15. semiconductor structures according to claim 13, it is characterised in that farther include:
Diffusion impervious layer, described diffusion impervious layer is formed between described substrate and described lanthanide oxide layer；
Optionally, described diffusion impervious layer includes Al2O3、ZrO2、Y2O3In one or more.
16. semiconductor structures according to claim 13, it is characterised in that described rare earth oxide includes (Gd1-xErx)2O3、(Gd1-xNdx)2O3、(Er1-xNdx)2O3、(Pr1-xLax)2O3、(Pr1-xNdx)2O3、(Pr1-xGdx)2O3、(Er1-xLax)2O3In
One or more, wherein the span of x is 0-1.
17. semiconductor structures according to claim 13, it is characterised in that lattice paprmeter a of described rare earth oxide with
The relation of lattice paprmeter b of described semiconductor layer is: a=(2 ± c) b, and wherein c is lattice constant mismatch rate, 0≤c≤15%.
18. semiconductor structures according to claim 13, it is characterised in that described lanthanide oxide layer (222) crystal face
The halfwidth of XRD diffraction maximum is less than 5 degree.
19. semiconductor structures according to claim 13, it is characterised in that described semiconductor layer is Si, Ge, iii-v
One or more in compound semiconductor.
20. semiconductor structures according to claim 13, it is characterised in that described lanthanide oxide layer is heavy by sputtering
Long-pending formation；
Optionally, described lanthanide oxide layer and described semiconductor layer at least one be by sputtering sedimentation and annealing shape
Become.
21. semiconductor structures according to claim 20, it is characterised in that described sputtering sedimentation be magnetron sputtering deposition or
Ion beam sputter depositing；
Optionally, described sputtering sedimentation is pulsed sputtering sedimentation or ion beam aided sputtering deposition.
22. according to the semiconductor structure described in claim 20 or 21, it is characterised in that during described sputtering sedimentation, underlayer temperature is big
In 400 degrees Celsius.
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