CN106057625A - Electric arc chamber capable of improving ion implantation purity and ion implantation method - Google Patents
Electric arc chamber capable of improving ion implantation purity and ion implantation method Download PDFInfo
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- CN106057625A CN106057625A CN201610364522.9A CN201610364522A CN106057625A CN 106057625 A CN106057625 A CN 106057625A CN 201610364522 A CN201610364522 A CN 201610364522A CN 106057625 A CN106057625 A CN 106057625A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
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- Engineering & Computer Science (AREA)
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Abstract
The present invention provides an electric arc chamber capable of improving ion implantation purity and an ion implantation method. The electric arc chamber comprises a filament for generating primary electrons, a cathode, an anode and a gas supply pipeline; the gas supply pipeline injects a reaction gas into the electric arc chamber; the primary electrons emitted by the filament enter the cathode; under a heating condition, the cathode is bombarded by the primary electrons, so that secondary electrons can be generated, the secondary electrons bombard the reaction gas under the effects of the electric fields of the anode and the cathode to ionize the reaction gas, so that plasmas can be generated; and the material of the cathode has at least one kind of donor energy level. According to the electric arc chamber of the present invention, the secondary electrons are emitted from the cathode having the donor energy levels, so that the plasmas can be generated; the generated plasmas have high higher energy and density, so that the formation of metal ions and metal molecular ions in the plasmas can be inhibited; and the dissociation rate of the edges of the plasmas can be accelerated, so that the edges of the plasmas will not form unwanted metal ions and metal molecular ions, and therefore, the purity of the implanted plasmas can be further improved.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to a kind of arc chamber improving ion implanting purity and ion note
Enter method.
Background technology
All the time, in the semiconductor fabrication process including image processing apparatus, by controlling dopant ion concentration,
Using ion implantation device to form doped layer in ion implanting mode is one of important process, and ion implantation device includes generation etc.
The arc chamber of gas ions and the accelerating cavity of acceleration plasma；Generally ion implantation technology include using arc chamber generation etc. from
Daughter, plasma is then injected in wafer at the accelerated ion beam current that formed of accelerating cavity.Arc chamber produces plasma
Process include: under voltage effect, the filament of arc chamber produces primary electron (primary ions), simultaneously in arc chamber
Being passed through impurity gas, under the electric field action of arc chamber, thermoelectron collides with impurity gas atom, makes impurity gas atom
Generation is dissociated formation ion, constantly collision and ionization, thus forms plasma.But, in the process, arc chamber and
Electric arc cavity wall can produce unwanted metal ion and metallic molecule ion (molecular ions), these unwanted from
There is white macula problem in the image that son will cause such as image processor to be formed；Additionally, these metal ions and metallic molecule
Ion can be mixed in ion beam current, reduces the purity injected at wafer intermediate ion, affects the performance of product.
Summary of the invention
In order to overcome problem above, there is the material of donor level as cathode emitter it is desirable to provide use,
It launches secondary electron, utilizes secondary electron to produce ion to excite impurity gas to dissociate.
In order to achieve the above object, the invention provides a kind of arc chamber improving ion implanting purity, including for producing
The raw filament of primary electron, negative electrode, anode and steam line, steam line is passed through reacting gas in arc chamber, and filament sends
Primary electron incides in negative electrode；In a heated condition, described negative electrode is produced secondary electron, secondary by the bombardment of primary electron
Electronics bombards reacting gas under the electric field action of anode and negative electrode, makes reacting gas ionization produce plasma；Described negative electrode
Material there is at least one donor level.
Preferably, the material of described negative electrode includes having the material of a kind of donor level, have the material of two kinds of donor levels
Material and there are any two kinds of material of more than three kinds donor levels.
Preferably, described negative electrode includes the first secondary region and is positioned at the first secondary region
The second secondary region in the cathode edge region of top and bottom；The material in described second secondary region
Resistivity more than the resistivity of material in described first secondary region so that described second secondary district
The electricity of the first secondary electron that the electric potential energy of the second secondary electron that territory sends sends higher than described first secondary district
Potential energy.
Preferably, the width in described second secondary region is the width in described first secondary region
20～30%.
Preferably, described negative electrode also has the 3rd secondary region；3rd secondary region is positioned at institute
Stating cathode edge region and surrounded in described first secondary region, described 3rd secondary region is with described
Second secondary region has overlapping region, and described 3rd secondary region sends the 3rd secondary electron.
Preferably, described filament includes filament core and the filament circle around filament core, described filament core and described lamp
Wire ring is used to launch primary electron；First secondary described in described second secondary region continued circling
Region is arranged, and the corresponding described first secondary region of described filament core is arranged, described filament circle the corresponding described 2nd 2
Secondary electron-emitting area and described 3rd secondary region, so that described first secondary field emission goes out
One secondary electron, the second secondary field emission goes out the second secondary electron, and the 3rd secondary district launches
Three secondary electrons.
Preferably, the resistivity of the material in described second secondary region is described first secondary district
2～1000 times of the resistivity of the material in territory.
In order to achieve the above object, present invention also offers a kind of ion injection method, including generating plasma, then
Plasma makes plasma project on wafer after accelerating；It uses above-mentioned arc chamber to generate plasma.
Preferably, described negative electrode includes the first secondary region and is positioned at the first top, secondary region
The second secondary region in the cathode edge region of portion and bottom；The material in described second secondary region
Resistivity is more than the resistivity of the material in described first secondary region so that described second secondary region
The electromotive force of the first secondary electron that the electric potential energy of the second secondary electron sent sends higher than described first secondary district
Energy；The process using the arc chamber described in claim 1 to generate plasma specifically includes:
Step 01: open filament, filament produces primary electron；
Step 02: under primary electron excites, the first secondary district launches the first secondary electron, and second
The second secondary electron is launched in second electrode launch site；Wherein, the electric potential energy of the second secondary electron is higher than the first secondary electron
Electric potential energy；
Step 03: be passed through reacting gas in arc chamber, apply voltage between a cathode and an anode, at the first secondary electron
In region between region and anode, the first secondary electron provocative reaction gas generates the first plasma, at the second secondary electron
In region between region and anode, the second secondary electron provocative reaction gas generates the second plasma；Wherein, the second two times
Reacting gas is dissociated speed by electronics speed of dissociating reacting gas more than the first secondary electron, and the second plasma
Density is higher than the density of the first plasma.
Preferably, described negative electrode also has the 3rd secondary region；3rd secondary region is positioned at institute
State cathode edge region and by described first secondary region surround, the described 3rd secondary region of part with
Described second secondary region has overlapping region；
Described step 02 specifically includes: under primary electron excites, and the first secondary district launches the first two times
Electronics, the 3rd secondary district launches the 3rd secondary electron, and the second secondary electron is launched in described overlapping region simultaneously
With the 3rd secondary electron；The electric potential energy of the second secondary electron is more than the electric potential energy of the first secondary electron；
Described step 03 specifically includes: is passed through reacting gas in arc chamber, applies voltage between a cathode and an anode,
In region between first secondary electron region and anode, the first secondary electron provocative reaction gas generates the first plasma,
In region between described overlapping region and anode, the second secondary electron and the 3rd secondary electron common provocative reaction gas generate
Second three plasma body, in the region between the 3rd secondary electron region and anode, the 3rd secondary electron provocative reaction gas is raw
Become three plasma body；Wherein, the second secondary electron reacting gas is dissociated speed more than the first secondary electron to reaction gas
The speed of dissociating of body, and the density of the second three plasma body is higher than the density of the first plasma.
The arc chamber of the raising ion implanting purity of the present invention and ion injection method, have donor level by employing
Negative electrode, utilize this emission of cathode go out secondary electron to make reacting gas produce plasma, plasma produced by it has
Higher energy and density, can suppress the metal ion in formed plasma and the formation of metallic molecule ion, from
And improve the purity injecting plasma；Further, the resistivity of the material in the second secondary region is higher than first
The resistivity of the material of primary electron emitting area, it is possible to make the density of the plasma of the second secondary region formation
It is above the plasma that the first primary electron emitting area is formed, it is possible to accelerate dissociating of edge plasma with electric potential energy
Speed, it is to avoid edge plasma forms unwanted metal ion and metallic molecule ion, improves further and injects plasma
The purity of body.
Accompanying drawing explanation
Fig. 1 is the structural representation of the arc chamber of embodiments of the invention one
Fig. 2 is the structural representation of the negative electrode of embodiments of the invention one
Fig. 3 is the structural representation of the arc chamber of embodiments of the invention two
Fig. 4 is the structural representation of the negative electrode of embodiments of the invention two
Detailed description of the invention
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in this specific embodiment, the general replacement known to those skilled in the art is also
Contain within the scope of the present invention.
The arc chamber of the present invention, uses the material with at least one donor level as cathode material to launch secondary electricity
Son, generates in order to provocative reaction gas and has the high-octane plasma of high density, it is to avoid produce unwanted in plasma
Metal ion, metallic molecule ion, polyvalent metal ion etc., improve the purity for injecting plasma, thus avoid made
There are the defects such as white macula in the standby device such as device such as logic circuit device, image sensor devices, improves the performance of device.
It should be noted that the material with at least one donor level can be the material structure with multiple donor level
The composite become；Can include there is the material of a kind of donor level, there is the material of two kinds of donor levels and there are three kinds
Any two kinds of the material of above donor level；For example, it is possible to be to there is the material of a kind of donor level and there are more than three kinds
The composite of the material of donor level, or there is the material of two kinds of donor levels and there is the material of more than three kinds donor levels
The composite of material；Or the material with a kind of donor level and the composite of the material with two kinds of donor levels.
Embodiment one
Below in conjunction with accompanying drawing 1-2 and specific embodiment, the present invention is described in further detail.It should be noted that, accompanying drawing is equal
Use the form simplified very much, use non-ratio accurately, and only in order to conveniently, clearly to reach to aid in illustrating the present embodiment
Purpose.
In the present embodiment, refer to Fig. 1, arc chamber 100 include for produce the filament 101 of primary electron, negative electrode 102,
Anode 103 and steam line 104, steam line 104 is passed through reacting gas in arc chamber 100, and filament 101 sends primary electron
Incide in negative electrode 102；In a heated condition, negative electrode 102 is produced secondary electron by the bombardment of primary electron, and secondary electron exists
Bombard reacting gas under the electric field action of anode 103 and negative electrode 102, make reacting gas ionization produce plasma；The present embodiment
In the material of negative electrode 102 be the material at least with a kind of donor level.
In the present embodiment, negative electrode 102 has supporter 1021 and secondary region, and supporter 1021 is used for carrying
Secondary region；Secondary region includes the first secondary region 1022 and is positioned at the first two times
Second secondary region 1023 of negative electrode 102 marginal area outside electron emission region 1022；Second secondary electron
The resistivity of the material of emitting area 1023 is more than the resistivity of the material in the first secondary region 1022 so that second
The electric potential energy of the second secondary electron e2 that secondary region 1023 sends is higher than 1022, the first secondary district
The electric potential energy of the first secondary electron e1 gone out.It is also preferred that the left the resistivity of the material in the second secondary region 1023 is
2～1000 times of the resistivity of the material in one secondary region 1022；Here the first secondary region
The material of 1022 is the material of Pt, and the material in the second secondary region 1023 is Sc, certainly, and the first secondary
The material in region 1022 and the material in the second secondary region 1023 can also be compounded with other reflective metals, such as
Tungsten, graphite, molybdenum, tantalum, the combination of one or more of titanium；
As in figure 2 it is shown, the axonometric chart of negative electrode during the structure on the left side is Fig. 1 in Fig. 2, the structure on the right side is negative electrode in Fig. 1
Right side view, supporter 1021 here is cylindrical shell, and filament 101 is launched the transmitting terminal (helical form) of primary electron and is positioned at circle
In post housing, and transmitting terminal and the first secondary region 1022 and the second secondary region 1023 set relatively
Put；First secondary region 1022 is positioned at the center of cylindrical shell end face, the second 1023, secondary region
In the marginal area of cylindrical shell end face, and it is only located at top and the bottom in the first secondary region 1022；It is also preferred that the left
The width in the second secondary region 1023 is the 20～30% of the width in the first secondary region 1022.Second
Secondary region 1023 can be embedded in supporter 1021 surface.
Ion injection method in the present embodiment, including generating plasma, then plasma make etc. after accelerating from
Daughter projects on wafer；Wherein, have employed above-mentioned arc chamber to generate plasma；The process generating plasma is concrete
Including:
Step 01: open filament, filament produces primary electron；
Concrete, by applying the filament voltage of 2～50V to filament, using the heater current less than 20A to carry out exciter lamp
Silk produces primary electron (primary electron).
Step 02: under primary electron excites, the first secondary district launches the first secondary electron, and second
The second secondary electron is launched in second electrode launch site；Wherein, the electric potential energy of the second secondary electron is higher than the first secondary electron
Electric potential energy；
Concrete, primary electron bombards in the first secondary region and the second secondary region, as
Shown in Fig. 1 so that the first secondary electron e1, the second secondary region are launched in the first secondary region 1022
1023 launch the second secondary electron e2, as previously described, because the resistivity of the material in the second secondary region is more than
The resistivity of the material in the first secondary region so that the second secondary electron that the second secondary region sends
The electric potential energy of the first secondary electron that sends higher than the first secondary region of electric potential energy.
Step 03: be passed through reacting gas in arc chamber, apply voltage between a cathode and an anode, at the first secondary electron
In region between region and anode, the first secondary electron provocative reaction gas generates the first plasma, at the second secondary electron
In region between region and anode, the second secondary electron provocative reaction gas generates the second plasma.
Concrete, referring to Fig. 1, in arc chamber 100, it is passed through reacting gas, is combined in negative electrode 102 and anode 103
Between apply 300～600V positive bias-voltage so that reacting gas is corresponding to the first secondary district 1022 and anode
Region between 103 forms the first plasma P 1, corresponding between the second secondary district 1023 and anode 103
Region forms the second plasma P 2, owing to the electric potential energy of the second secondary electron e2 is higher than the electricity of the first secondary electron e1 sent
Potential energy, the reacting gas in the region between the second secondary region 1023 and anode 103 is by the second secondary electron e2
The speed dissociated is more than the reacting gas in the region between the first secondary region 1022 and anode 103 by the one or two
The speed that secondary electronics e1 dissociates, and the density of the second plasma P 2 generated is more than density P1 of the first plasma.
Embodiment two
Below in conjunction with accompanying drawing 3-4 and specific embodiment, the present invention is described in further detail.It should be noted that, accompanying drawing is equal
Use the form simplified very much, use non-ratio accurately, and only in order to conveniently, clearly to reach to aid in illustrating the present embodiment
Purpose.
In the present embodiment, refer to Fig. 3, arc chamber 200 include for produce the filament 201 of primary electron, negative electrode 202,
Anode 203 and steam line 204, steam line 204 is passed through reacting gas in arc chamber 200, and filament 201 sends primary electron
Incide in negative electrode 202；In a heated condition, negative electrode 202 is produced secondary electron by the bombardment of primary electron, and secondary electron exists
Bombard reacting gas under the electric field action of anode 203 and negative electrode 202, make reacting gas ionization produce plasma；The present embodiment
In the material of negative electrode 202 be the material at least with a kind of donor level.
In the present embodiment, refer to Fig. 3 and Fig. 4, the axonometric chart of negative electrode during left side structure is Fig. 3 in Fig. 4, the right side in Fig. 4
Structure is the right side view of negative electrode in Fig. 3, and negative electrode 202 has supporter 2021 and secondary region, supporter 2021
For carrying secondary region；Secondary region includes the first secondary region 2022, is positioned at
Second secondary region 2023 of negative electrode 202 marginal area of one top, secondary region 2022 and bottom with
And the 3rd secondary region 2024；3rd secondary region 2024 is positioned at negative electrode 202 marginal area and by
One secondary region 2022 surrounds, the 3rd secondary region 2024 and the second secondary region 2023
Having overlapping region, the 3rd secondary region 2024 is used for sending the 3rd secondary electron e3, and overlapping region is (overlapping here
Region is identical with the second secondary region) it is simultaneously emitted by the second secondary electron e2 ' and the 3rd secondary electron e3, the one or two
Secondary electron emission region 2022 sends the first secondary electron e1 '.
In the present embodiment, the resistivity of the material in the second secondary region 2023 is more than the first secondary
The resistivity of the material in region 2022 so that the electricity of the second secondary electron e2 ' that the second secondary region 2023 sends
The electric potential energy of the first secondary electron e1 ' that potential energy sends higher than the first secondary district 2022.It is also preferred that the left the second two electricity
The resistivity of the material of sub-emitting area 2023 is the 2～1000 of the resistivity of the material in the first secondary region 2022
Times；The material in the first secondary region 2022 here is Pt, and the material in the second secondary region 2023 is
Sc, certainly, the material in the first secondary region 2022 and the material in the second secondary region 2023 are all right
Be compounded with other reflective metals, such as tungsten, graphite, molybdenum, tantalum, titanium one or more；Meanwhile, if the 3rd secondary electron region
The resistivity of the material of 2024 selects the resistivity of the material more than the first secondary electron region 2022, then the 3rd secondary electron e3
The electric potential energy electric potential energy also greater than the first secondary electron e1 '；The material in the 3rd secondary electron region 2024 can also select with
The material that second secondary electron region 2023 is identical, in this case, the second secondary electron region 2023 belongs to the three or two electricity
A part for subregion 2024.
As shown in Figure 4, here, negative electrode 202 is cylindrical shell, and filament 201 is launched the transmitting terminal of primary electron and is positioned at cylinder
In housing, and transmitting terminal and the first secondary region 2022 and the second secondary region 2023 are oppositely arranged；
First secondary region 2022 is positioned at the center of cylindrical shell end face, and the second secondary region 2023 is positioned at circle
The marginal area of post housing end face and be only located at top and the bottom in the first secondary region 2022, the 3rd secondary electron
Launch site 2024 is positioned at cylindrical shell end face and arranges around the first secondary region 2022, the 3rd secondary
Region 2024 is overlapping with the second secondary region 2023, and the second secondary region 2023 is overlay region here
Territory；It is also preferred that the left the 20 of the width that the width in the second secondary region 2023 is the first secondary region 2022
～30%.Second secondary region 2023 can be embedded in supporter 201 surface.
Need exist for explanation, due to the 3rd secondary region 2023 and the second secondary region
The situation of 2022 overlaps, can be to include that the second secondary is trivial in the periphery in the first secondary region 2021
Territory 2022 forms the 3rd secondary region 2023, and now the 3rd secondary region 2023 is covered in the second two times
On electron emission region 2022, that is to say that overlay region includes two-layer, wherein one layer is the second secondary region, another layer
It it is the 3rd secondary region；Or the material of overlay region includes the material and the three or two in the second secondary region
The composite of the material of secondary electron emission region；
Additionally, as shown in Figure 4, in the present embodiment, filament 201 (shown in fine dotted line) includes filament core (shown in thick dashed line frame)
And the filament circle 2011 around filament core, filament core and filament circle 2011 are used to launch primary electron；The second two times
Electron emission region 2023 continued circling the first secondary region 2022 is arranged, and corresponding first secondary electron of filament core is sent out
Penetrate region 2022 to arrange, corresponding second secondary district 2023 and the 3rd secondary region of filament circle 2011
2024, thus utilize filament core and filament circle 2011 so that the full and uniform bombardment of primary electron is sent out to the first secondary electron
Penetrate the 2022, second secondary region, region 2023 and the 3rd secondary region 2024, so that the first two times
Electron emission region 2022 launches the first secondary electron e1 ', and the second secondary region 2023 launches the second two times
Electronics e2 ', the 3rd secondary district 2024 launches the 3rd secondary electron e3, and overlapping region (is the second two electricity here
Sub-launch site 2023) launch the second secondary electron e2 ' and the 3rd secondary electron e3 simultaneously.
Ion injection method in the present embodiment two, including generating plasma, then plasma makes after accelerating
Gas ions projects on wafer；Wherein, have employed the arc chamber of embodiment two to generate plasma；Generate the mistake of plasma
Journey specifically includes:
Step 001: open filament, filament produces primary electron；
Concrete, by applying the filament voltage of 2～50V to filament, using the heater current less than 20A to carry out exciter lamp
Silk core and filament circle produce primary electron (primary electron).
Step 002: under primary electron excites, the first secondary district launches the first secondary electron, and the three or two
Secondary electron-emitting area launches the 3rd secondary electron, and the second secondary electron and the 3rd secondary electron are launched in overlapping region simultaneously；
The electric potential energy of the second secondary electron is more than the electric potential energy of the first secondary electron；
Concrete, referring to Fig. 3 and 4, the primary electron that filament core produces mainly bombards to be sent out to the first secondary electron
Penetrating in region 2022 and the second secondary region 2023, the primary electron that filament circle 2011 produces mainly bombards to the 3rd
Secondary region 2024, also some bombardment is to the second secondary region 2023 so that the first two electricity
Sub-emitting area 2022 launches the first secondary electron e1 ', and the second two electricity are launched in the second secondary region 2023
Sub-e2 ', as previously described, because the resistivity of the material in the second secondary region 2023 is more than the first secondary
The resistivity of the material in region 2022 so that the electricity of the second secondary electron e2 ' that the second secondary region 2023 sends
The electric potential energy of the first secondary electron e1 ' that potential energy sends higher than the first secondary district 2022；Here, again due to filament circle
2011 bombardments producing primary electron so that the electricity of the second secondary electron e2 ' that the second secondary region 2023 is launched
Potential energy is more higher than the electric potential energy of the first secondary electron e1 '.Meanwhile, if the resistance of the material in the 3rd secondary electron region 2024
Rate selects the resistivity of material more than the first secondary electron region 2022, then the electric potential energy of the 3rd secondary electron e3 is also greater than the
The electric potential energy of one secondary electron e1 '；The material in the 3rd secondary electron region 2024 can also select and the second secondary electron region
2023 identical materials, in this case, the second secondary electron region 2023 belongs to of the 3rd secondary electron region 2024
Point.
Step 003: be passed through reacting gas in arc chamber, apply voltage between a cathode and an anode, at the first two electricity
In region between subregion and anode, the first secondary electron provocative reaction gas generates the first plasma, in overlapping region and
In region between anode, the second secondary electron and the 3rd secondary electron common provocative reaction gas generate the second three plasma body,
In region between the 3rd secondary electron region and anode, the 3rd secondary electron provocative reaction gas generates three plasma body；
Concrete, referring to Fig. 3, in arc chamber 200, it is passed through reacting gas, is combined in negative electrode 202 and anode 203
Between apply 300～600V positive bias-voltage so that reacting gas is corresponding to the first secondary district 2022 and anode
Region between 203 forms the first plasma P 1 ', (is being the second secondary district here corresponding to overlapping region
2023) region and between anode 203 forms the second three plasma body P2 ', corresponding to the 3rd secondary region 2024
Region between (except overlapping region) and anode 203 forms three plasma body (not shown), due to the second secondary electron e2 '
Electric potential energy higher than the electric potential energy of the first secondary electron e1 sent, (be the second secondary district here in overlapping region
2023) speed that the reacting gas in the region and between anode 203 is dissociated more than the first secondary region 202 with
The speed that the reacting gas in the region between anode 203 is dissociated, and the density of the second three plasma body P2 ' generated is more than the
The density of one plasma P1 '.Meanwhile, if the resistivity of the material in the 3rd secondary electron region 2024 selects more than the one or two
The resistivity of the material of secondary electronics regions 2022, the then region between the 3rd secondary region 2024 and anode 203
The speed that reacting gas is dissociated is also greater than the reaction in the region between the first secondary region 2022 and anode 203
The speed that gas is dissociated, and the density of the three plasma body generated is more than the density of the first plasma P 1 '；Now,
The density of two three plasma body P2 ' is also greater than the density of three plasma body；If, the material in the 3rd secondary electron region 2024
Can select the material identical with the second secondary electron region 2023, in this case, the second plasma P 2 ' and third from
The density of daughter is identical, the plasma between overlapping region (being the second secondary district 2023 here) and anode 203
Density and three plasma body density, the second plasma density are the most identical, the second secondary region 2023 and anode
The speed that the reacting gas in the region between 203 is dissociated is equal between the 3rd secondary region 2024 and anode 203
The speed that is dissociated of the reacting gas in region.
Additionally, present invention also offers the ion implantation device of a kind of arc chamber with above-described embodiment one or two.Close
Other structure in ion device can use conventional structure, repeats no more here.
Although the present invention with preferred embodiment disclose as above, right described embodiment illustrate only for the purposes of explanation and
, it is not limited to the present invention, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry change and retouching, the protection domain that the present invention is advocated should be as the criterion with described in claims.
Claims (10)
1. an arc chamber, including for producing the filament of primary electron, negative electrode, anode and steam line, steam line is to electricity
Being passed through reacting gas in arc chamber, filament sends primary electron and incides in negative electrode；In a heated condition, described negative electrode is by originally
The bombardment of electronics produces secondary electron, and secondary electron bombards reacting gas under the electric field action of anode and negative electrode, makes reaction gas
Volume ionization produces plasma；It is characterized in that, the material of described negative electrode has at least one donor level.
Arc chamber the most according to claim 1, it is characterised in that the material of described negative electrode includes having a kind of donor level
Material, there is the material of two kinds of donor levels and there are any two kinds of material of more than three kinds donor levels.
Arc chamber the most according to claim 1, it is characterised in that described negative electrode include the first secondary region with
And it is positioned at the second secondary region in the top in the first secondary region and the cathode edge region of bottom；Institute
The resistivity of the material stating the second secondary region is more than the resistance of the material in described first secondary region
Rate so that the electric potential energy of the second secondary electron that described second secondary region sends is higher than described first secondary electron
The electric potential energy of the first secondary electron that launch site sends.
Arc chamber the most according to claim 3, it is characterised in that the width in described second secondary region is institute
State the first secondary region width 20～30%.
Arc chamber the most according to claim 3, it is characterised in that described negative electrode also has the 3rd secondary district
Territory；3rd secondary region is positioned at described cathode edge region and is surrounded in described first secondary region,
Described 3rd secondary region and described second secondary region have overlapping region, described three or two electricity
Sub-emitting area sends the 3rd secondary electron.
Arc chamber the most according to claim 5, it is characterised in that described filament includes filament core and around filament core
Filament circle, described filament core and described filament circle are used to launch primary electron；Described second secondary region
Described in continued circling, the first secondary region is arranged, and the corresponding described first secondary region of described filament core sets
Put, the corresponding described second secondary district of described filament circle and described 3rd secondary region, so that described
First secondary field emission goes out the first secondary electron, and the second secondary field emission goes out the second two electricity
Son, the 3rd secondary district launches the 3rd secondary electron.
7. according to the arc chamber described in claim 3-6 any one, it is characterised in that described second secondary region
2～1000 times of resistivity of the material that resistivity is described first secondary region of material.
8. an ion injection method, including generating plasma, then plasma makes plasma project after accelerating
On wafer；It is characterized in that, use the arc chamber described in claim 1 to generate plasma.
Method the most according to claim 8, it is characterised in that described negative electrode include the first secondary region and
It is positioned at the second secondary region in the cathode edge region of the first top, secondary region and bottom；Described
The resistivity of the material in two secondary regions, more than the resistivity of the material in described first secondary region, makes
Obtain the electric potential energy of the second secondary electron that described second secondary region sends higher than described first secondary
The electric potential energy of the first secondary electron that district sends；The arc chamber described in claim 1 is used to generate the process tool of plasma
Body includes:
Step 01: open filament, filament produces primary electron；
Step 02: under primary electron excites, the first secondary district launches the first secondary electron, and the second two times
Electrode emission district launches the second secondary electron；Wherein, the electric potential energy of the second secondary electron is higher than the electromotive force of the first secondary electron
Energy；
Step 03: be passed through reacting gas in arc chamber, apply voltage between a cathode and an anode, in the first secondary electron region
With in the region between anode, the first secondary electron provocative reaction gas generates the first plasma, in the second secondary electron region
With the second secondary electron provocative reaction gas generates the second plasma in the region between anode；Wherein, the second secondary electron
Reacting gas is dissociated speed, and the density of the second plasma by speed of dissociating reacting gas more than the first secondary electron
Density higher than the first plasma.
Method the most according to claim 9, it is characterised in that described negative electrode also has the 3rd secondary region；
3rd secondary region is positioned at described cathode edge region and is surrounded in described first secondary region, part
Described 3rd secondary region and described second secondary region have overlapping region；
Described step 02 specifically includes: under primary electron excites, and the first secondary district launches the first secondary electron,
3rd secondary district launches the 3rd secondary electron, and the second secondary electron and the 3rd is launched in described overlapping region simultaneously
Secondary electron；The electric potential energy of the second secondary electron is more than the electric potential energy of the first secondary electron；
Described step 03 specifically includes: is passed through reacting gas in arc chamber, applies voltage between a cathode and an anode, first
In region between secondary electron region and anode, the first secondary electron provocative reaction gas generates the first plasma, described
In region between overlapping region and anode, the second secondary electron and the 3rd secondary electron common provocative reaction gas generate second
Three plasma body, in the region between the 3rd secondary electron region and anode, the 3rd secondary electron provocative reaction gas generates the
Three plasma body；Wherein, the second secondary electron reacting gas is dissociated speed more than the first secondary electron to reacting gas
Dissociate speed, and the density of the second three plasma body is higher than the density of the first plasma.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109358237A (en) * | 2018-09-26 | 2019-02-19 | 台州学院 | The experiment porch and application method that a kind of plasma collision frequency influences electromagnetic propagation |
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| CN103132013B (en) * | 2011-11-25 | 2015-10-28 | 株式会社神户制钢所 | Ion bombardment device and utilize the cleaning method of substrate material surface of this device |
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| CN103132013B (en) * | 2011-11-25 | 2015-10-28 | 株式会社神户制钢所 | Ion bombardment device and utilize the cleaning method of substrate material surface of this device |
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