CN106057625B - Improve the arc chamber and ion injection method of ion implanting purity - Google Patents
Improve the arc chamber and ion injection method of ion implanting purity Download PDFInfo
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- CN106057625B CN106057625B CN201610364522.9A CN201610364522A CN106057625B CN 106057625 B CN106057625 B CN 106057625B CN 201610364522 A CN201610364522 A CN 201610364522A CN 106057625 B CN106057625 B CN 106057625B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/36—Gas-filled discharge tubes for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation
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Abstract
The present invention provides a kind of arc chamber and ion injection method for improving ion implanting purity, including the filament for producing primary electron, cathode, anode and steam line, steam line is passed through reacting gas into arc chamber, and filament sends primary electron and incides in cathode；In a heated condition, cathode is subject to the bombardment of primary electron to produce secondary electron, and secondary electron bombards reacting gas under the electric field action of anode and cathode, reacting gas ionization is produced plasma；The material of cathode has at least one donor level；The present invention goes out secondary electron to produce plasma by the emission of cathode with donor level, its caused plasma has higher energy and density, it can suppress the formation of the metal ion and metallic molecule ion in formed plasma, it can accelerate the dissociation rate of edge plasma, avoid edge plasma from forming unwanted metal ion and metallic molecule ion, further improve the purity of injection plasma.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of arc chamber for improving ion implanting purity and ion note
Enter method.
Background technology
All the time, in the semiconductor fabrication process including image processing apparatus, by controlling Doped ions concentration,
It is one of important process to use ion implantation device to form doped layer in a manner of ion implanting, and ion implantation device includes generation etc.
The arc chamber of gas ions and the accelerating cavity for accelerating plasma；Usual ion implantation technology include using arc chamber produce etc. from
Daughter, plasma are accelerated to form ion beam current and be then injected into wafer in accelerating cavity.Plasma is produced in arc chamber
Process include：The filament of arc chamber produces primary electron (primary ions) under voltage effect, while into arc chamber
Impurity gas is passed through, thermoelectron collides with impurity gas atom under the electric field action of arc chamber, makes impurity gas atom
Produce dissociation and form ion, constantly collision and ionization, so as to form plasma.However, in the process, arc chamber and
Unwanted metal ion and metallic molecule ion (molecular ions) can be produced in electric arc cavity wall, these it is unwanted from
There is hickie problem in the image that son will cause such as image processor to be formed；In addition, these metal ions and metallic molecule
Ion can be mixed into ion beam current, reduce the purity in the injection of wafer intermediate ion, influence the performance of product.
The content of the invention
In order to overcome problem above, the present invention is intended to provide using the material with donor level as cathode emitter,
It launches secondary electron, and ion is produced to excite impurity gas generation dissociation using secondary electron.
In order to achieve the above object, the present invention provides a kind of arc chamber for improving ion implanting purity, including for producing
Filament, cathode, anode and the steam line of raw primary electron, steam line are passed through reacting gas into arc chamber, and filament is sent
Primary electron is incided in cathode；In a heated condition, the cathode is subject to the bombardment of primary electron to produce secondary electron, secondary
Electronics bombards reacting gas under the electric field action of anode and cathode, reacting gas ionization is produced plasma；The cathode
Material there is at least one donor level.
Preferably, the material of the cathode is included with a kind of material of donor level, the material with two kinds of donor levels
Any two kinds of material and material with more than three kinds donor levels.
Preferably, the cathode includes the first secondary region and positioned at the first secondary region
The second secondary region in the cathode edge region of top and bottom；The material in the second secondary region
Resistivity be more than the first secondary region material resistivity so that the second secondary area
Electricity of the energy of position for the second secondary electron that domain is sent higher than the first secondary electron that the first secondary area is sent
Potential energy.
Preferably, the width in the second secondary region is the width in the first secondary region
20~30%.
Preferably, the cathode also has the 3rd secondary region；3rd secondary region is located at institute
State cathode edge region and by the first secondary region surround, the 3rd secondary region with it is described
Second secondary region has overlapping region, and the 3rd secondary region sends the 3rd secondary electron.
Preferably, the filament includes filament core and the filament circle around filament core, the filament core and the lamp
Wire ring is used to launch primary electron；First secondary described in the second secondary region continued circling
Region is set, and the filament core corresponds to the first secondary region and sets, and the filament circle corresponds to the described 2nd 2
Secondary electron-emitting area and the 3rd secondary region, so that the first secondary field emission goes out
One secondary electron, the second secondary field emission go out the second secondary electron, and the 3rd secondary area launches
Three secondary electrons.
Preferably, the resistivity of the material in the second secondary region is the first secondary area
2~1000 times of the resistivity of the material in domain.
In order to achieve the above object, present invention also offers a kind of ion injection method, including plasma is generated, then
Plasma makes plasma project on wafer after accelerating；It uses above-mentioned arc chamber to generate plasma.
Preferably, the cathode includes the first secondary region and is pushed up positioned at the first secondary region
The second secondary region in the cathode edge region of portion and bottom；The material in the second secondary region
Resistivity is more than the resistivity of the material in the first secondary region so that the second secondary region
Potential of the energy of position of the second secondary electron sent higher than the first secondary electron that the first secondary area is sent
Energy；Specifically included using the arc chamber described in claim 1 to generate the process of plasma：
Step 01：Filament is opened, filament produces primary electron；
Step 02：Under primary electron excitation, the first secondary area launches the first secondary electron, and second
Launch the second secondary electron in second electrode launch site；Wherein, the energy of position of the second secondary electron is higher than the first secondary electron
Energy of position；
Step 03：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode, in the first secondary electron
The first secondary electron provocative reaction gas generates the first plasma in region between region and anode, in the second secondary electron
The second secondary electron provocative reaction gas generates the second plasma in region between region and anode；Wherein, the second two times
Dissociation speed of the electronics to reacting gas is more than dissociation speed of first secondary electron to reacting gas, and the second plasma
Density is higher than the density of the first plasma.
Preferably, the cathode also has the 3rd secondary region；3rd secondary region is located at institute
State cathode edge region and by the first secondary region surround, part the 3rd secondary region with
The second secondary region has overlapping region；
The step 02 specifically includes：Under primary electron excitation, the first secondary area launches the first two times
Electronics, the 3rd secondary area launch the 3rd secondary electron, and the second secondary electron is launched in the overlapping region at the same time
With the 3rd secondary electron；The energy of position of second secondary electron is more than the energy of position of the first secondary electron；
The step 03 specifically includes：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode,
The first secondary electron provocative reaction gas generates the first plasma in region between first secondary electron region and anode,
Second secondary electron and the common provocative reaction gas generation of the 3rd secondary electron in region between the overlapping region and anode
Second three plasma body, the 3rd secondary electron provocative reaction gas is given birth in the region between the 3rd secondary electron region and anode
Into three plasma body；Wherein, dissociation speed of second secondary electron to reacting gas is more than the first secondary electron to reaction gas
The dissociation speed of body, and the density of the second three plasma body is higher than the density of the first plasma.
The arc chamber and ion injection method of the raising ion implanting purity of the present invention, by using with donor level
Cathode, goes out secondary electron to make reacting gas produce plasma, its caused plasma has using the emission of cathode
Higher energy and density, can suppress the formation of the metal ion and metallic molecule ion in formed plasma, from
And improve the purity of injection plasma；Further, the resistivity of the material in the second secondary region is higher than first
The resistivity of the material of primary electron emitting area, can make the density of the plasma of the second secondary region formation
The plasma that the first primary electron emitting area formed is above with energy of position, the dissociation of edge plasma can be accelerated
Speed, avoids edge plasma from forming unwanted metal ion and metallic molecule ion, further improves injection plasma
The purity of body.
Brief description of the drawings
Fig. 1 is the structure diagram of the arc chamber of the embodiment of the present invention one
Fig. 2 is the structure diagram of the cathode of the embodiment of the present invention one
Fig. 3 is the structure diagram of the arc chamber of the embodiment of the present invention two
Fig. 4 is the structure diagram of the cathode of the embodiment of the present invention two
Embodiment
To make present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
The arc chamber of the present invention, launches secondary electricity using the material with least one donor level as cathode material
Son, to plasma of the provocative reaction gas generation with high density high-energy, avoids producing in plasma unwanted
Metal ion, metallic molecule ion, polyvalent metal ion etc., improve the purity for being used for injecting plasma, so as to avoid made
There is the defects of hickie in standby device device such as logic circuit device, image sensor devices, improves the performance of device.
It should be noted that the material with least one donor level can be the material structure with a variety of donor levels
Into composite material；It can include a kind of material with material of donor level, with two kinds of donor levels and with three kinds
Any two kinds of the material of above donor level；For example, can be for the material with a kind of donor level and with more than three kinds
The composite material of the material of donor level, or the material with two kinds of donor levels and the material with more than three kinds donor levels
The composite material of material；Or the composite material of the material with a kind of donor level and the material with two kinds of donor levels.
Embodiment one
The present invention is described in further detail below in conjunction with attached drawing 1-2 and specific embodiment.It should be noted that attached drawing is equal
Using very simplified form, using non-accurate ratio, and only to it is convenient, clearly reach and aid in illustrating the present embodiment
Purpose.
In the present embodiment, referring to Fig. 1, arc chamber 100 include being used for producing the filament 101 of primary electron, cathode 102,
Anode 103 and steam line 104, steam line 104 are passed through reacting gas into arc chamber 100, and filament 101 sends primary electron
Incide in cathode 102；In a heated condition, cathode 102 is subject to the bombardment of primary electron to produce secondary electron, and secondary electron exists
Reacting gas is bombarded under the electric field action of anode 103 and cathode 102, reacting gas ionization is produced plasma；The present embodiment
In the material of cathode 102 be that at least there is a kind of material of donor level.
In the present embodiment, cathode 102 has supporter 1021 and secondary region, and supporter 1021 is used to carry
Secondary region；Secondary region includes the first secondary region 1022 and positioned at the first two time
Second secondary region 1023 of 102 fringe region of cathode outside electron emission region 1022；Second secondary electron
The resistivity of the material of emitting area 1023 is more than the resistivity of the material in the first secondary region 1022 so that second
The energy of position for the second secondary electron e2 that secondary region 1023 is sent is sent out higher than the first secondary area 1022
The energy of position of the first secondary electron e1 gone out.Preferably, the resistivity of the material in the second secondary region 1023 is the
2~1000 times of the resistivity of the material in one secondary region 1022；Here the first secondary region
1022 material is the material of Pt, and the material in the second secondary region 1023 is Sc, certainly, the first secondary
The material in region 1022 and the material in the second secondary region 1023 can also be compounded with other reflective metals, such as
One or more combinations of tungsten, graphite, molybdenum, tantalum, titanium；
As shown in Fig. 2, the structure on the left side is the stereogram of cathode in Fig. 1 in Fig. 2, the structure on the right side is cathode in Fig. 1
Right side view, supporter 1021 here is cylindrical shell, and filament 101 launches the transmitting terminal (helical form) of primary electron positioned at circle
In column housing, and transmitting terminal is set relatively with the first secondary region 1022 and the second secondary region 1023
Put；First secondary region 1022 is located at the center of cylindrical shell top surface, the second 1023, secondary region
In the fringe region of cylindrical shell top surface, and it is only located at the top and bottom in the first secondary region 1022；Preferably,
The width in the second secondary region 1023 is the 20~30% of the width in the first secondary region 1022.Second
Secondary region 1023 can be embedded in 1021 surface of supporter.
Ion injection method in the present embodiment, including generation plasma, then plasma make etc. after accelerating from
Daughter is projected on wafer；Wherein, above-mentioned arc chamber is employed to generate plasma；The process for generating plasma is specific
Including：
Step 01：Filament is opened, filament produces primary electron；
Specifically, by applying the filament voltage of 2~50V to filament, using the heater current no more than 20A come exciter lamp
Silk produces primary electron (primary electron).
Step 02：Under primary electron excitation, the first secondary area launches the first secondary electron, and second
Launch the second secondary electron in second electrode launch site；Wherein, the energy of position of the second secondary electron is higher than the first secondary electron
Energy of position；
Specifically, primary electron is bombarded into the first secondary region and the second secondary region, such as
Shown in Fig. 1 so that launch the first secondary electron e1, the second secondary region in the first secondary region 1022
1023 launch the second secondary electron e2, as previously described, because the resistivity of the material in the second secondary region is more than
The resistivity of the material in the first secondary region so that the second secondary electron that the second secondary region is sent
The energy of position of the first secondary electron that sends higher than the first secondary region of energy of position.
Step 03：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode, in the first secondary electron
The first secondary electron provocative reaction gas generates the first plasma in region between region and anode, in the second secondary electron
The second secondary electron provocative reaction gas generates the second plasma in region between region and anode.
Specifically, referring to Fig. 1, reacting gas is passed through into arc chamber 100, is incorporated in cathode 102 and anode 103
Between apply 300~600V positive bias-voltage so that reacting gas is corresponding to the first secondary area 1022 and anode
Region between 103 forms the first plasma P 1, corresponding between the second secondary area 1023 and anode 103
Region forms the second plasma P 2, since the energy of position of the second secondary electron e2 is higher than the electricity of the first secondary electron e1 sent
Potential energy, the reacting gas in the region between the second secondary region 1023 and anode 103 is by the second secondary electron e2
The speed of dissociation is more than the reacting gas in the region between the first secondary region 1022 and anode 103 by the one or two
The speed of secondary electronics e1 dissociation, and the density of the second plasma P 2 generated is more than the density P1 of the first plasma.
Embodiment two
The present invention is described in further detail below in conjunction with attached drawing 3-4 and specific embodiment.It should be noted that attached drawing is equal
Using very simplified form, using non-accurate ratio, and only to it is convenient, clearly reach and aid in illustrating the present embodiment
Purpose.
In the present embodiment, referring to Fig. 3, arc chamber 200 include being used for producing the filament 201 of primary electron, cathode 202,
Anode 203 and steam line 204, steam line 204 are passed through reacting gas into arc chamber 200, and filament 201 sends primary electron
Incide in cathode 202；In a heated condition, cathode 202 is subject to the bombardment of primary electron to produce secondary electron, and secondary electron exists
Reacting gas is bombarded under the electric field action of anode 203 and cathode 202, reacting gas ionization is produced plasma；The present embodiment
In the material of cathode 202 be that at least there is a kind of material of donor level.
In the present embodiment, Fig. 3 and Fig. 4 are referred to, left side structure is the stereogram of cathode in Fig. 3 in Fig. 4, the right side in Fig. 4
Structure is the right side view of cathode in Fig. 3, and cathode 202 has supporter 2021 and secondary region, supporter 2021
For carrying secondary region；Secondary region includes the first secondary region 2022, positioned at the
Second secondary region 2023 of 202 fringe region of cathode of the top and bottom of one secondary region 2022 with
And the 3rd secondary region 2024；3rd secondary region 2024 is located at 202 fringe region of cathode and by
One secondary region 2022 surrounds, the 3rd secondary region 2024 and the second secondary region 2023
With overlapping region, the 3rd secondary region 2024 is used to send the 3rd secondary electron e3, and overlapping region is (overlapping here
Region is identical with the second secondary region) it is simultaneously emitted by the second secondary electron e2 ' and the 3rd secondary electron e3, the one or two
Secondary electron emission region 2022 sends the first secondary electron e1 '.
In the present embodiment, the resistivity of the material in the second secondary region 2023 is more than the first secondary
The resistivity of the material in region 2022 so that the electricity for the second secondary electron e2 ' that the second secondary region 2023 is sent
Energy of position of the potential energy higher than the first secondary electron e1 ' that the first secondary area 2022 is sent.Preferably, the second two electricity
The resistivity of the material of sub- emitting area 2023 is the 2~1000 of the resistivity of the material in the first secondary region 2022
Times；The material in the first secondary region 2022 here is Pt, and the material in the second secondary region 2023 is
Sc, certainly, the material in the material in the first secondary region 2022 and the second secondary region 2023 can be with
It is compounded with other reflective metals, such as the one or more of tungsten, graphite, molybdenum, tantalum, titanium；Meanwhile if the 3rd secondary electron region
The resistivity selection of 2024 material is more than the resistivity of the material in the first secondary electron region 2022, then the 3rd secondary electron e3
Energy of position of the energy of position also greater than the first secondary electron e1 '；The material in the 3rd secondary electron region 2024 can also select with
The identical material in second secondary electron region 2023, in this case, the second secondary electron region 2023 belongs to the three or two electricity
A part for subregion 2024.
As shown in figure 4, here, cathode 202 is cylindrical shell, the transmitting terminal that filament 201 launches primary electron is located at cylinder
In housing, and transmitting terminal is oppositely arranged with the first secondary region 2022 and the second secondary region 2023；
First secondary region 2022 is located at the center of cylindrical shell top surface, and the second secondary region 2023 is positioned at circle
The fringe region of column housing top surface and the top and bottom for being only located at the first secondary region 2022, the 3rd secondary electron
Launch site 2024 is located at cylindrical shell top surface and is set around the first secondary region 2022, the 3rd secondary
Region 2024 is overlapping with the second secondary region 2023, and the second secondary region 2023 is overlay region here
Domain；Preferably, the width in the second secondary region 2023 is the 20 of the width in the first secondary region 2022
~30%.Second secondary region 2023 can be embedded in 201 surface of supporter.
Explanation is needed exist for, due to the 3rd secondary region 2023 and the second secondary region
2022 overlapping situations, can be trivial including the second secondary in the periphery in the first secondary region 2021
Domain 2022 forms the 3rd secondary region 2023, and the 3rd secondary region 2023 is covered in the second two times at this time
On electron emission region 2022, it that is to say that overlay region includes two layers, wherein one layer is the second secondary region, another layer
For the 3rd secondary region；Or the material of overlay region includes the material and the three or two in the second secondary region
The composite material of the material of secondary electron emission region；
In addition, as shown in figure 4, in the present embodiment, filament 201 (shown in fine dotted line) includes filament core (shown in thick dashed line frame)
And the filament circle 2011 around filament core, filament core and filament circle 2011 are used to launch primary electron；The second two times
2023 the first secondary of continued circling region 2022 of electron emission region is set, and filament core corresponds to the first secondary electron hair
Penetrate region 2022 to set, filament circle 2011 corresponds to the second secondary area 2023 and the 3rd secondary region
2024, so as to using filament core and filament circle 2011 the full and uniform bombardment of primary electron can be caused to be sent out to the first secondary electron
Region 2022, the second secondary region 2023 and the 3rd secondary region 2024 are penetrated, so that the first two times
Electron emission region 2022 launches the first secondary electron e1 ', and the second secondary region 2023 is launched the second two times
Electronics e2 ', the 3rd secondary area 2024 launch the 3rd secondary electron e3, and overlapping region (is here the second two electricity
Sub- launch site 2023) while launch the second secondary electron e2 ' and the 3rd secondary electron e3.
Ion injection method in the present embodiment two, including generation plasma, then make after plasma acceleration
Gas ions are projected on wafer；Wherein, the arc chamber of embodiment two is employed to generate plasma；Generate the mistake of plasma
Journey specifically includes：
Step 001：Filament is opened, filament produces primary electron；
Specifically, by applying the filament voltage of 2~50V to filament, using the heater current no more than 20A come exciter lamp
Silk core and filament circle produce primary electron (primary electron).
Step 002：Under primary electron excitation, the first secondary area launches the first secondary electron, and the three or two
Secondary electron-emitting area launches the 3rd secondary electron, and the second secondary electron and the 3rd secondary electron are launched in overlapping region at the same time；
The energy of position of second secondary electron is more than the energy of position of the first secondary electron；
Specifically, referring to Fig. 3 and 4, the primary electron that filament core produces, which is mainly bombarded to the first secondary electron, to be sent out
Penetrate in 2022 and second secondary region 2023 of region, the primary electron that filament circle 2011 produces mainly is bombarded to the 3rd
Secondary region 2024, also some bombardment is to the second secondary region 2023 so that the first two electricity
Sub- emitting area 2022 launches the first secondary electron e1 ', and the second two electricity are launched in the second secondary region 2023
Sub- e2 ', as previously described, because the resistivity of the material in the second secondary region 2023 is more than the first secondary
The resistivity of the material in region 2022 so that the electricity for the second secondary electron e2 ' that the second secondary region 2023 is sent
Energy of position of the potential energy higher than the first secondary electron e1 ' that the first secondary area 2022 is sent；Here, and due to filament circle
2011 produce the bombardment of primary electron so that the electricity of the second secondary electron e2 ' of the second secondary region 2023 transmitting
Potential energy is more higher than the energy of position of the first secondary electron e1 '.Meanwhile the if resistance of the material in the 3rd secondary electron region 2024
Rate selection is more than the resistivity of the material in the first secondary electron region 2022, then the energy of position of the 3rd secondary electron e3 is also greater than the
The energy of position of one secondary electron e1 '；The material in the 3rd secondary electron region 2024 can also select and the second secondary electron region
2023 identical materials, in this case, the second secondary electron region 2023 belong to one of the 3rd secondary electron region 2024
Point.
Step 003：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode, in the first two electricity
The first secondary electron provocative reaction gas generates the first plasma in region between subregion and anode, in overlapping region and
The second secondary electron and the common provocative reaction gas of the 3rd secondary electron generate the second three plasma body in region between anode,
The 3rd secondary electron provocative reaction gas generates three plasma body in region between the 3rd secondary electron region and anode；
Specifically, referring to Fig. 3, reacting gas is passed through into arc chamber 200, is incorporated in cathode 202 and anode 203
Between apply 300~600V positive bias-voltage so that reacting gas is corresponding to the first secondary area 2022 and anode
Region between 203 forms the first plasma P 1 ', (is being here the second secondary area corresponding to overlapping region
2023) region between anode 203 forms the second three plasma body P2 ', corresponding to the 3rd secondary region 2024
Region between (except overlapping region) and anode 203 forms three plasma body (not shown), due to the second secondary electron e2 '
Energy of position be higher than the energy of position of the first secondary electron e1 sent, (be here the second secondary area in overlapping region
2023) speed that the reacting gas in the region between anode 203 is dissociated be more than the first secondary region 202 with
The speed that the reacting gas in the region between anode 203 is dissociated, and the density of the second three plasma body P2 ' generated is more than the
The density of one plasma P1 '.Meanwhile if the resistivity selection of the material in the 3rd secondary electron region 2024 is more than the one or two
The resistivity of the material of secondary electronics regions 2022, the then region between the 3rd secondary region 2024 and anode 203
Reaction of the speed that reacting gas is dissociated also greater than the region between the first secondary region 2022 and anode 203
The speed that gas is dissociated, and the density of the three plasma body generated is more than the density of the first plasma P 1 '；At this time,
The density of second- and third-tier gas ions P2 ' is also greater than the density of three plasma body；If the material in the 3rd secondary electron region 2024
Can select the material identical with the second secondary electron region 2023, in this case, the second plasma P 2 ' and it is third from
The density of daughter is identical, the plasma of overlapping region (being here the second secondary area 2023) between anode 203
Density and three plasma volume density, the second plasma density all same, the second secondary region 2023 and anode
The speed that the reacting gas in the region between 203 is dissociated is equal between the 3rd secondary region 2024 and anode 203
Region the speed that is dissociated of reacting gas.
In addition, present invention also offers a kind of ion implantation device of the arc chamber with above-described embodiment one or two.Close
Conventional structure can be used in the other structures of ion device, which is not described herein again.
Although the present invention is disclosed as above with preferred embodiment, the right embodiment illustrate only for the purposes of explanation and
, the present invention is not limited to, if those skilled in the art can make without departing from the spirit and scope of the present invention
Dry changes and retouches, and the protection domain that the present invention is advocated should be subject to described in claims.
Claims (8)
1. a kind of arc chamber, including for producing filament, cathode, anode and the steam line of primary electron, steam line is to electricity
Reacting gas is passed through in arc chamber, filament sends primary electron and incides in cathode；In a heated condition, the cathode is subject to originally
The bombardment of electronics produces secondary electron, and secondary electron bombards reacting gas under the electric field action of anode and cathode, makes reaction gas
Volume ionization produces plasma；It is characterized in that, the material of the cathode has at least one donor level；The cathode includes
First secondary region and positioned at the cathode edge region of the top and bottom in the first secondary region
Second secondary region；The resistivity of the material in the second secondary region is more than the first two electricity
The resistivity of the material of sub- emitting area so that the potential for the second secondary electron that the second secondary region is sent
Can be higher than the energy of position for the first secondary electron that the first secondary area is sent.
2. arc chamber according to claim 1, it is characterised in that the material of the cathode includes having a kind of donor level
Material, any two kinds of the material with two kinds of donor levels and the material with more than three kinds donor levels.
3. arc chamber according to claim 1, it is characterised in that the width in the second secondary region is institute
State the 20~30% of the width in the first secondary region.
4. arc chamber according to claim 1, it is characterised in that the cathode also has the 3rd secondary area
Domain；3rd secondary region is located at the cathode edge region and surrounds the first secondary region,
The 3rd secondary region has overlapping region, the three or two electricity with the second secondary region
Sub- emitting area sends the 3rd secondary electron.
5. arc chamber according to claim 1, it is characterised in that the filament includes filament core and around filament core
Filament circle, the filament core and the filament circle are used to launch primary electron；The second secondary region
First secondary region described in continued circling is set, and the filament core corresponds to the first secondary region and sets
Put, the filament circle corresponds to the second secondary region and the 3rd secondary region, so that described
One secondary field emission goes out the first secondary electron, and the second secondary field emission goes out the second secondary electron,
3rd secondary field emission goes out the 3rd secondary electron.
6. according to the arc chamber described in claim 1-5 any one, it is characterised in that the second secondary region
The resistivity of material be 2~1000 times of resistivity of the material in the first secondary region.
7. a kind of ion injection method, including generation plasma, then project plasma after plasma acceleration
On wafer；It is characterized in that, plasma is generated using the arc chamber described in claim 1；Using described in claim 1
Arc chamber specifically includes to generate the process of plasma：
Step 01：Filament is opened, filament produces primary electron；
Step 02：Under primary electron excitation, the first secondary area launches the first secondary electron, and the second two times
Launch the second secondary electron in electrode emission area；Wherein, the energy of position of the second secondary electron is higher than the potential of the first secondary electron
Energy；
Step 03：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode, in the first secondary electron region
The first secondary electron provocative reaction gas generates the first plasma in region between anode, in the second secondary electron region
The second secondary electron provocative reaction gas generates the second plasma in region between anode；Wherein, the second secondary electron
Dissociation speed to reacting gas is more than dissociation speed of first secondary electron to reacting gas, and the density of the second plasma
Higher than the density of the first plasma.
8. the method according to the description of claim 7 is characterized in that the cathode also has the 3rd secondary region；
3rd secondary region is located at the cathode edge region and surrounds the first secondary region, part
The 3rd secondary region has overlapping region with the second secondary region；
The step 02 specifically includes：Under primary electron excitation, the first secondary area launches the first secondary electron,
3rd secondary area launches the 3rd secondary electron, and the second secondary electron and the 3rd are launched in the overlapping region at the same time
Secondary electron；The energy of position of second secondary electron is more than the energy of position of the first secondary electron；
The step 03 specifically includes：Reacting gas is passed through into arc chamber, applies voltage between a cathode and an anode, first
The first secondary electron provocative reaction gas generates the first plasma in region between secondary electron region and anode, described
Second secondary electron and the common provocative reaction gas generation second of the 3rd secondary electron in region between overlapping region and anode
Three plasma body, the 3rd secondary electron provocative reaction gas generation the in the region between the 3rd secondary electron region and anode
Three plasma body；Wherein, dissociation speed of second secondary electron to reacting gas is more than the first secondary electron to reacting gas
Speed is dissociated, and the density of the second three plasma body is higher than the density of the first plasma.
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| JPH06293967A (en) * | 1993-04-07 | 1994-10-21 | Ishikawajima Harima Heavy Ind Co Ltd | Ion shower device |
| CN1799124A (en) * | 2003-06-04 | 2006-07-05 | 夏普株式会社 | Ion doping device, ion doping method and semiconductor device |
| CN104425198A (en) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Ion source and ion implantation device |
| CN103132013B (en) * | 2011-11-25 | 2015-10-28 | 株式会社神户制钢所 | Ion bombardment device and utilize the cleaning method of substrate material surface of this device |
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| JPH06293967A (en) * | 1993-04-07 | 1994-10-21 | Ishikawajima Harima Heavy Ind Co Ltd | Ion shower device |
| CN1799124A (en) * | 2003-06-04 | 2006-07-05 | 夏普株式会社 | Ion doping device, ion doping method and semiconductor device |
| CN103132013B (en) * | 2011-11-25 | 2015-10-28 | 株式会社神户制钢所 | Ion bombardment device and utilize the cleaning method of substrate material surface of this device |
| CN104425198A (en) * | 2013-08-20 | 2015-03-18 | 中芯国际集成电路制造(上海)有限公司 | Ion source and ion implantation device |
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