CN1060559A - With the equipment that has inclined gate semiconductor device is sealed in the molding compounds - Google Patents
With the equipment that has inclined gate semiconductor device is sealed in the molding compounds Download PDFInfo
- Publication number
- CN1060559A CN1060559A CN 91104054 CN91104054A CN1060559A CN 1060559 A CN1060559 A CN 1060559A CN 91104054 CN91104054 CN 91104054 CN 91104054 A CN91104054 A CN 91104054A CN 1060559 A CN1060559 A CN 1060559A
- Authority
- CN
- China
- Prior art keywords
- die cavity
- cast gate
- molding compounds
- running channel
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 37
- 238000000465 moulding Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 239000012530 fluid Substances 0.000 description 2
- 239000000206 moulding compound Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/27—Sprue channels ; Runner channels or runner nozzles
- B29C45/2701—Details not specific to hot or cold runner channels
- B29C45/2708—Gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Abstract
The invention discloses a kind of height water-tight equipment of encapsulated semiconductor device in molding compounds reliably.Sealing equipment comprises a die cavity, a running channel and a cast gate.Die cavity is fixed together by mold and bed die and forms.Running channel is in order to carry molding compounds.Cast gate is then in order to be communicated with running channel with die cavity.The characteristics of sealing equipment are that cast gate (47a) has a part (48a) that tilts to die cavity.The flow rate of molding compounds in die cavity can properly be controlled by the gradient of regulating sloping portion.The gradient of sloping portion is preferably between 20 degree and 35 degree.
Description
The present invention relates to make the equipment of semiconductor device, more particularly, relate in encapsulation process and semiconductor device to be sealed in a kind of equipment of using in the molding compounds.
Process for fabrication of semiconductor device can be divided into two parts usually: circuit design process and assembling process.Assembling process is the Chip Packaging chip such as transistor that circuit design has been finished by thin film technique, memory device etc. or seals, just can be fitted into the device of these good seals in the printed circuit board (PCB) (PCB) then.
The chip that separates from disk through the operation of tube core welding and wire bond, is sealed in the molding compounds of plastic resin earlier then.
Figure 1A and 1B illustrate the program and the conventional mould of encapsulated semiconductor device conventional process respectively.According to common process, the chip of welding of process tube core and wire bond operation is fixed to and is configured in accordingly on the ribbon lead framework.Welding wire couples together lead frame and each chip.Preheating comprises and the ribbon of each chip, lead frame and welding wire they is fixed in the mould in program 1b in program 1a then.In program 1c, by the molding compounds injection mould of casting pressing mold system feed compartment with epoxy resin of preheating and so on.In program 1d, the operation by the feeding pressure head is transported to the container 1 shown in Figure 1B with the molding compounds of gel state, then it is injected a plurality of die cavity C1-C48 by running channel 2.The molding compounds through preheating that is transported to each die cavity solidifies in program 1f.After this, mould separates, unloads the good device of lower mould up and down in program 1g.In program 1h,, then device is tested from the unnecessary part of molded good device each lead frame of excision.
In the common process of this encapsulated semiconductor device, must consider that the mobile performance of molding compounds may form the space in the device of good seal, welding wire is flushed away, and chip mat is crooked or the like.The formation in space can reduce moistureproof reliability, and welding wire is flushed away may make between each welding wire and produces short circuit.Though it is not too big that welding wire is flushed away for the influence of the less device of the welding wire that resembles transistor and so on and pin number, to pin and the more big capacity LVSI(very lagre scale integrated circuit (VLSIC) of welding wire number) memory device just may cause serious damage.This problem can be solved by the flow rate that the control molding compounds flows in the mould cavity, and this flow rate depends on the geometry that molding compounds is transported to the cast gate of cavity C 6 from the running channel shown in Figure 1B 2 to a great extent.
The United States Patent (USP) 4,043,027 that patent right is granted people such as Birchler discloses a kind of common water-tight equipment and method, as shown in Figure 2.Fig. 2 A and 2B illustrate that respectively sealing has the plane graph and the profile of the mould that the simple transistor of three pins uses.
Referring to Fig. 2 A, with weld zone 24, also be connected with transistor chip 25 on the lead frame 22, this chip is connected on lead frame 21 and 23 by welding wire 26 and 27.Dotted line is represented die cavity 20.Referring to Fig. 2 B, die cavity is to form by upper cavity mould 28 is fixed together with auxiliary lower mode cavity mould 29, is provided with cast gate 31 in the lower mode cavity mould 29 and is communicated with running channel 32.Therefore, the molding compounds 33 that enters die cavity 20 by cast gate 31 is the first halves (arrow represent flow direction) that flow to die cavity from the Lower Half of die cavity.Like this, thus the pressure of the flow rate fluid in the die cavity Lower Half big than the die cavity first half, thereby on the following interface of each lead frame 21,22 and 23, may form the space, and also weld tabs may be upwards crooked.In addition, molding compounds in the temperature of die cavity Lower Half than temperature height at the die cavity first half, thereby molding compounds so just makes molded good device imperfection in the ratio of viscosities of the die cavity Lower Half viscosity low (viscosity and the temperature of fluid are inversely proportional to) at the die cavity first half.The flow rate of molding compounds is inhomogeneous in the disclosed in addition above-mentioned prior art, and welding wire is flushed away, so the intrinsic limitation of the prior art itself makes it not be suitable for the many big capacity VLSI semiconductor device of thin welding wire quantity.
The purpose of this invention is to provide a kind of height reliable device of using in the molding compounds that semiconductor device is sealed in.
Another object of the present invention is properly to control the flow rate of molding compounds in die cavity.
The equipment that semiconductor device is sealed in the molding compounds of the present invention comprises a die cavity, a running channel and a cast gate; The die cavity system forms by mold and the bed die of assisting are fixed together, running channel is in order to transport molding compounds, cast gate is then in order to be communicated with running channel with die cavity, and have sloping portion, thereby can properly regulate the flow rate of molding compounds in die cavity by the gradient of regulating this sloping portion towards die cavity.
Now so that embodiments of the present invention will be described in detail with reference to the accompanying drawings so that make the clearer understanding of reader above-mentioned purpose of the present invention and other advantage.In the accompanying drawing:
Figure 1A has illustrated semiconductor device has been sealed in process in the molding compounds;
Figure 1B illustrates the layout of the mould that uses in the sealing;
Fig. 2 displaying is sealed in the conventional equipment of using in the molding compounds with semiconductor device;
Fig. 3 illustrates the plane graph of mould of the present invention;
Fig. 4 illustrates the profile of the major part of mould of the present invention;
Fig. 5 illustrates another embodiment of mould of the present invention;
Fig. 6 illustrate molding compounds in die cavity with the difference of the cast gate sloping portion gradient different mobility status.
Referring to Fig. 3, showed the plane graph of the mould of one embodiment of the invention among the figure, in mould, sealing the semiconductor chip 41 of 16 pins of a tool and lead frame LF1-LF16.This part of mould has shown any die cavity C4(40 of mould shown in Figure 1B in detail).Adjoin die cavity C4(40) dispose other die cavity C3 and C5.Semiconductor chip 41 is fixed on down on the weld zone 42, and 16 pads 43 of chip are connected on 16 lead frame LF1-LF16 by 16 welding wires 44.Die cavity C4(40) be equipped with a cast gate 47 to be communicated with running channel 2.A plurality of this die cavitys fit together and form the mould shown in Figure 1B.The number of die cavity is decided on demand.
Referring to Fig. 4, die cavity 40 shown in Figure 3 and the cast gate 47a cutaway view along the intercepting of X-Y line is described among the figure, die cavity 40 is fixed together by upper cavity mould 45 and auxiliary lower mode cavity mould 46 and forms, and 41 of semiconductor chips are fixed on the weld zone 42.Semiconductor chip 41 also is connected on the first and the 16 lead frame LF1 and the LF16 by welding wire 44a and 44b respectively.
According to the present invention, upper cavity mould 45 is equipped with a cast gate 47a.The formation inclination angle, top that cast gate 47a adjoins die cavity 40 is the sloping portion 48a of θ.Sloping portion 48a only forms at the intake section of die cavity 40, thereby it starts to control making usefulness to the flow rate that molding compounds flows into die cavity 40, and this flow rate depends on the degree of depth of cast gate 47a and the tiltangle of sloping portion 48a.
Referring to Fig. 5, an alternative embodiment of the invention is described among the figure.Cast gate 47b is located in the lower mode cavity mould 46, the adjoining of sloping portion 48b that it has an inclination angle is θ and die cavity 40.No matter cast gate 47a and 47b are provided in a side of also is provided in a side of in the upper cavity mould 45 in the lower mode cavity mould 46, does not influence the flow rate of molding compounds, because this flow rate only is subjected to the influence of size of the tiltangle of sloping portion 48a, 48b.
According to experiment, the flow regime of molding compounds in die cavity 40 is subjected to the influence of the tiltangle of cast gate 47a and 47b, as shown in Figure 6.Referring to Fig. 6 A, if tiltangle, is then gone up flow rate 61 less than 20 degree greater than descending flow rate 62, the part that molding compounds enters the chip bottom is subjected to moulding compound to enter the effect of thrust of the part on chip top.In addition, because the flow rate 61 on top is big, thereby make welding wire be rushed at the direction that flows in the top shown in Fig. 6 A.As a result, each welding wire may contact with each other, thereby makes chip malfunctioning.
Referring to Fig. 6 B, if tiltangle then descends flow rate 62 greater than last flow rate 61, thereby weld tabs 42 is up pushed away greater than 35 degree.Therefore for to make the flow rate of molding compounds even, tiltangle should satisfy the requirement of 20 °＜θ of inequality＜35 °.
As mentioned above, the sloping portion of cast gate evenly improves the reliability that semiconductor device seals by making the moulding compound flow rate in molding compounds.
Although the present invention is with regard to its some most preferred embodiment particular instantiation and explanations, but those skilled in the art that scholar is understood that, can carry out above-mentioned and other modification aspect form of the present invention and details under the prerequisite that does not break away from spirit of the present invention and scope.
Claims (5)
1, a kind of equipment with molding compounds sealing semiconductor chips finished product, this equipment has a die cavity, one running channel and a cast gate, die cavity system is by formation that mold and bed die are fixed together, running channel is in order to carry molding compounds, cast gate is then in order to be communicated with described running channel by the path in described mold or the formation of bed die given position with described die cavity, it is characterized in that, near described die cavity, disposed a sloping portion for described path, described sloping portion extends to described die cavity inside from a certain given centre position on the described path uppermost surface, and is certain inclination angle.
2, equipment as claimed in claim 1 is characterized in that, described cast gate is located in the described mold or in the described bed die.
3, equipment as claimed in claim 1 is characterized in that, described inclination angle is basically between 20 degree and 35 degree.
4, a kind of water-tight equipment of using with molding compounds sealing semiconductor chips finished product, sealing equipment has a die cavity and a running channel, die cavity system is by formation that mold and bed die are fixed together, running channel is then in order to transmit molding compounds, it is characterized in that the improvement of being done also comprises a cast gate of being made up of following part;
The first of cast gate is located in the described mold, and is communicated with described running channel, and this first's internal diameter is constant; With
The second portion of cast gate is located in the described mold, and the described first of cast gate is communicated with described die cavity, and its internal diameter of the second portion of described cast gate reduces gradually towards the direction near described die cavity.
5, a kind of water-tight equipment of using with molding compounds sealing semiconductor chips finished product, sealing equipment has a die cavity and a running channel, die cavity system is by with the formation together fixed to one another of mold and bed die, running channel is in order to carry molding compounds, system, it is characterized in that it comprises a cast gate of being made up of following part:
The first of cast gate is located in the described bed die, and is communicated with described running channel, and the internal diameter of the first of described cast gate is constant; With
The second portion of cast gate is located in the described bed die, links up in order to first and described die cavity with described cast gate, and its internal diameter of the second portion of described cast gate reduces gradually towards the direction near described die cavity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR16006/90 | 1990-10-10 | ||
| KR900016006 | 1990-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1060559A true CN1060559A (en) | 1992-04-22 |
Family
ID=19304459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91104054 Pending CN1060559A (en) | 1990-10-10 | 1991-06-14 | With the equipment that has inclined gate semiconductor device is sealed in the molding compounds |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH06177189A (en) |
| CN (1) | CN1060559A (en) |
| GB (1) | GB2248580A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224582A (en) * | 2008-11-21 | 2011-10-19 | 飞科公司 | Device and method for at least partially encapsulating a closed flat carrier with electronic components |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5409362A (en) * | 1992-11-24 | 1995-04-25 | Neu Dynamics Corp. | Encapsulation molding equipment |
| US5429488A (en) * | 1992-11-24 | 1995-07-04 | Neu Dynamics Corporation | Encapsulating molding equipment and method |
| EP0875354B1 (en) * | 1996-01-18 | 2002-10-02 | Hoya Corporation | Method of manufacturing lens, injection mold for molding of lens, and molded lens |
| US6015280A (en) * | 1997-04-28 | 2000-01-18 | Advanced Micro Devices | Apparatus for reducing warping of plastic packages |
| JP2004114696A (en) * | 2003-11-28 | 2004-04-15 | Oki Electric Ind Co Ltd | Mold package and its manufacture method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB579752A (en) * | 1944-02-02 | 1946-08-14 | Stanley Dallas Pollitt | Improvements in or relating to the moulding of reinforced plastics |
| GB698721A (en) * | 1952-02-01 | 1953-10-21 | George Montague Mejlso | Improvements in injection moulding and die-casting methods and moulds for use therewith |
| JPS535255A (en) * | 1976-07-05 | 1978-01-18 | Hitachi Ltd | Mold for molding resin |
| US4277435A (en) * | 1979-03-28 | 1981-07-07 | Logic Devices, Inc. | Plastic tumbler and method and apparatus for making same |
| JPS5775434A (en) * | 1980-10-28 | 1982-05-12 | Nec Corp | Resin sealing metal mold for semiconductor device |
| DK146709C (en) * | 1980-12-09 | 1984-05-21 | Eskesen Brdr As | PROCEDURE FOR MANUFACTURING INJECTIVE PLASTIC SUBSTANCES WITH INSERT SHEETS WITH DECORATIVE AND / OR DESCRIPTIVE PRESSURE AND APPLIANCES FOR USE IN EXERCISING THE PROCEDURE |
| GB2100656A (en) * | 1981-06-19 | 1983-01-06 | Holdt J W Von | Mould gate for permitting the introduction of stiff moulding compound into a mould chamber |
| JPS62268134A (en) * | 1986-05-16 | 1987-11-20 | Toshiba Corp | Semiconductor resin sealing mold |
| JPH01268036A (en) * | 1988-04-19 | 1989-10-25 | Matsushita Electron Corp | Molding die |
| JP2748592B2 (en) * | 1989-09-18 | 1998-05-06 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device and molding die for semiconductor encapsulation |
| JP2675644B2 (en) * | 1989-11-10 | 1997-11-12 | 株式会社東芝 | Resin mold equipment for semiconductor devices |
-
1991
- 1991-06-14 CN CN 91104054 patent/CN1060559A/en active Pending
- 1991-06-18 JP JP17192491A patent/JPH06177189A/en active Pending
- 1991-10-10 GB GB9121541A patent/GB2248580A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102224582A (en) * | 2008-11-21 | 2011-10-19 | 飞科公司 | Device and method for at least partially encapsulating a closed flat carrier with electronic components |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2248580A (en) | 1992-04-15 |
| JPH06177189A (en) | 1994-06-24 |
| GB9121541D0 (en) | 1991-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |