CN106054531A - Preparation method of positive black photoresist material and manufacture method of display substrate - Google Patents
Preparation method of positive black photoresist material and manufacture method of display substrate Download PDFInfo
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- CN106054531A CN106054531A CN201610567439.1A CN201610567439A CN106054531A CN 106054531 A CN106054531 A CN 106054531A CN 201610567439 A CN201610567439 A CN 201610567439A CN 106054531 A CN106054531 A CN 106054531A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/0163—Non ionic diazonium compounds, e.g. diazosulphonates; Precursors thereof, e.g. triazenes
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- Materials For Photolithography (AREA)
Abstract
The invention provides a preparation method of a positive black photoresist material and a manufacture method of a display substrate. The preparation method of the positive black photoresist material is simple, the prepared positive black photoresist material is low in debugging difficulty in offset formation technology, and the technology is stable. The manufacture method of the display substrate adopts positive black photoresist material, and meanwhile forms black matrix with offset and spacers, the technical debugging difficulty is small, the technology is stable, and in addition, the positive black photoresist material produces photolysis reaction after being subject to light illumination and produces alkali soluble substance, so that the formed offset can be adjusted towards the maximization direction, and further large liquid crystal compression overmeasure can be provided for a liquid crystal display panel.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to preparation method and the display base of a kind of positivity black photoresist
The manufacture method of plate.
Background technology
Liquid crystal display (Liquid Crystal Display, LCD) is the display being most widely used in the market
Product, its production Technology is the most ripe, and product yield is high, and production cost is relatively low, and market acceptance is high.Existing market
On liquid crystal display major part be backlight liquid crystal indicator, it includes display panels and backlight module.Generally liquid
LCD panel by color film (Color Filter, CF) substrate, array (Array) substrate, be sandwiched in color membrane substrates and array base palte
Between liquid crystal and sealing frame glue (Sealant) composition, wherein, CF substrate mainly includes for by color blocking unit (R/G/B)
It is formed with the chromatic filter layer of coloured light, for preventing the black matrix" (Black Matrix, BM) of pixel edge light leak, Yi Jiyong
In maintaining the chock insulator matter (Photo Spacer, PS) that box is thick, in large scale liquid crystal display floater, it will usually use two types
Above chock insulator matter, as arranged main chock insulator matter (Main PS) and auxiliary chock insulator matter (Sub PS) on CF substrate, plays multistage
The effect of buffering, to prevent various Mura or bad generation.
Black chock insulator matter (Black Photo Spacer, BPS) material is a kind of new material, and it had both had conventional art
Middle chock insulator matter properties of materials, such as more outstanding elastic-restoring force and the pollution etc. relatively low to liquid crystal, but also has black square
Battle array properties of materials, such as higher optical density (OD) (optical density, OD) value, can play interception, accordingly, it is capable to
It is enough in and two kinds of manufacturing process of BM with PS are united two into one, reduce by one gold-tinted processing procedure, reduce material cost and production time
(tact time), thus reduce whole production cost.
Owing to current BPS material is all made up of negative photoresist system, had by employing in production application
The intermediate tone mask plate (Half Tone Mask) of different light transmittances is exposed technique, owing to ultraviolet (UV) light source is by difference
When the mask plate of light transmittance is irradiated to BPS material, the intensity of illumination that zones of different is subject to is different, makes BPS regional occur
Crosslinking (Cross linking) intensity is different.After eventually passing developing process and solid curing process, define and there is thickness difference
Structure.
Wherein, negative photo glued membrane layer is when being irradiated by UV light, and light initiator is excited generation free radical；But due to film
There is oxygen (O on layer surface2) existence, the free radical being excited is easily by O2Capture and quencher, therefore the crosslinking degree that surface occurs is not
Height, afterwards, bottom the lower face of film layer to film layer, its cross-linking reaction degree is more and more lower.Therefore, as it is shown in figure 1, for
By the part of illumination on negative photo glued membrane layer, because upper surface crosslinking degree is the highest, and touch developer solution at first, therefore with half
The region, surface 1,2,3 corresponding to full light transmission part 910 ' on tone mask plate and with the table corresponding to semi-transparent part 920 '
Region, face 1 ', 2 ', 3 ' all can eat away a part by developed liquid；Owing to developing process is isotropic erosion, thus with
The continuation of developing process, also can be subject to different journeys by marginal area 4,6,7,9 and the marginal area 4 ', 6 ', 7 ', 9 ' of illumination
The erosion of degree, has eventually formed light stop block 110 and the light stop block 120 of mushroom-shaped structure as shown in Figure 2.
Then, as it is shown on figure 3, during photoresist hard baking, due to the effect of heat flow Yu thermal contraction, and make to bear
Property Other substrate materials film layer on respectively corresponding full light transmission part 910 ' and the light stop block 110 of semi-transparent part 920 ' and light stop block
The thickness difference formed between 120, thus realize the offset (Delta of main chock insulator matter 110 ' and auxiliary chock insulator matter 120 '
Height)；Wherein heat flow refers to when temperature meets and exceeds the vitrification point of Other substrate materials, segment setting in motion,
Show high-elastic character, just make the molecular chain movement of whole Other substrate materials show viscosity flow character, thus whole smooth stop block
110 and light stop block 120 occur heat flow to cave in, and form main chock insulator matter 110 ' and the auxiliary chock insulator matter 120 ' of the trapezoidal state of class.
Light stop block 110 and the thickness of light stop block 120 can be reduced during this；And thermal contraction refers to that in photoresist composition, molecular resin is subject to
Heat and volume shrinks, wherein because of the difference of cross-linking reaction degree, the thermal coefficient of expansion causing molecular resin is variant, thus
The offset of main chock insulator matter 110 ' and auxiliary chock insulator matter 120 ' is realized during photoresistance hard baking.
In sum, the BPS material of negative photoresist system, the formation of its offset receives thickness, light exposure, development temperature
Degree and time, admittedly bake the impact of the aspect parameters such as temperature and time, actual process is debugged out desired value more complicated.In addition
The pyrocondensation receipts mainly caused by crosslinking degree due to offset cause with heat flow, and the formation to its offset of developing is contributed relatively
Little.
Summary of the invention
It is an object of the invention to provide the preparation method of a kind of positivity black photoresist, prepared positivity black light
Resistance material, in offset formation process, debugging difficulty is less, and technique is more stable.
The present invention also aims to provide the manufacture method of a kind of display base plate, use positivity black photoresist simultaneously
Forming black matrix" and the chock insulator matter with offset, in technique, debugging difficulty is less, and technique is more stable.
For achieving the above object, the present invention provides the preparation method of a kind of positivity black photoresist, comprises the steps:
Step 10, black pigment, dispersant and the first solvent are mixed, obtain black pigment dispersion liquid；
Step 20, phenolic resin is added in the second solvent, stirring and dissolving under the conditions of lucifuge, it is subsequently adding adjacent diazonium tea and makes
Compound and positivity photoresistance auxiliary agent, obtain positivity photoresistance colloid；
Step 30, the black pigment dispersion liquid obtained is homogeneously dispersed in described positivity photoresistance colloid, obtains positivity
Black photoresist.
Described black pigment for flower cyanines are black, nigrosine, white carbon black, chromium oxide, ferrum oxide, titanium are black, titanium oxynitride, titanium nitride,
Or colour mixture organic pigment；Wherein, described colour mixture organic pigment be red, blue, green, purple, yellow, blue or green, blue and in fuchsin organic pigment extremely
The pigment of few two or more mixing.
In described step 10, black pigment, dispersant and the first solvent are carried out by the mass ratio according to 1:0.5-1.5:3-5
Mixing；Described step 10 also includes, after black pigment, dispersant and the first solvent are mixed, and should with the 3rd solvent dilution
Mixture so as to get the solid content of black pigment dispersion liquid be 20wt%-30wt%；Described first, second and the 3rd solvent
It is organic solvent.
In described step 20, according to the mass ratio of 1:4-6, phenolic resin added the second solvent, according to obtained just
Property photoresistance colloid in the mass ratio of 3wt%-4wt% add adjacent diazonium tea and make compound, according at obtained positivity photoresistance
In colloid, the mass ratio of 0.005wt%-1wt% adds positivity photoresistance auxiliary agent.
Described first solvent is 3-methoxybutyl acetas；Described second and the 3rd solvent be propylene glycol monomethyl ether acetic acid
Ester；Described dispersant is BYK-167；It is tetrahydroxybenzophenone-215 diazo naphthoquinone sulfonic acid that described adjacent diazonium tea makes compound
Ester；Described positivity photoresistance auxiliary agent includes Siloxane-Oxyalkylene Copolymers levelling agent, 4-methyl-2 pentanone and 4-dihydroxy benaophenonel.
The present invention also provides for the manufacture method of a kind of display base plate, comprises the steps:
Step 1, provide a underlay substrate and positivity black photoresist, by uniform for described positivity black photoresist
It is coated on described underlay substrate, forms black light shield layer, carry out vacuum suction, take out in described positivity black photoresist
Partial solvent, carries out front baking the most again；
Described positivity black photoresist is the positivity photoresistance glue material containing black pigment；
Step 2, one intermediate tone mask plate of offer, utilize described intermediate tone mask plate to expose described black light shield layer
Light and development, and through solid curing process processing procedure, obtain black matrix" and the chock insulator matter higher than described black matrix" simultaneously；
Described chock insulator matter includes main chock insulator matter；The intermediate tone mask plate provided in described step 2 includes for main chock insulator matter
Light tight district, for forming the first semi-opaque region of black matrix" and remaining full transparent area, described light tight district, first
The light transmittance of semi-opaque region and full transparent area is respectively 0, X1%, 100%, wherein, 100 ＞ X1 ＞ 0.
Described black pigment for flower cyanines are black, nigrosine, white carbon black, chromium oxide, ferrum oxide, titanium are black, titanium oxynitride, titanium nitride,
Or colour mixture organic pigment；Wherein, described colour mixture organic pigment be red, blue, green, purple, yellow, blue or green, blue and in fuchsin organic pigment extremely
The pigment of few two or more mixing.
In described step 1, before carrying out, the baking temperature of baking is 80-120 DEG C, and baking time is 100-150s.
The chock insulator matter formed in described step 2 also includes assisting chock insulator matter, the intermediate tone mask plate provided in described step 2
Also including the second semi-opaque region for forming auxiliary chock insulator matter, the light transmittance of described second semi-opaque region is X2%, wherein, X1
＞ X2 ＞ 0.
In described step 1, the concrete preparation process of positivity black photoresist includes:
Step 10, black pigment, dispersant and the first solvent are mixed, obtain black pigment dispersion liquid；
Step 20, phenolic resin is added in the second solvent, stirring and dissolving under the conditions of lucifuge, it is subsequently adding adjacent diazonium tea and makes
Compound and positivity photoresistance auxiliary agent, obtain positivity photoresistance colloid；
Step 30, the black pigment dispersion liquid obtained is homogeneously dispersed in described positivity photoresistance colloid, obtains positivity
Black photoresist.
Beneficial effects of the present invention: the preparation method of a kind of positivity black photoresist that the present invention provides, preparation method
Simply, prepared positivity black photoresist, in offset formation process, debugging difficulty is less, and technique is more stable.This
The manufacture method of a kind of display base plate of bright offer, uses positivity black photoresist to concurrently form the black matrix" with offset
And chock insulator matter, in technique, debugging difficulty is less, and technique is more stable, further, since be irradiated by light after make positivity black light
Resistance material generation photolysis reactions generates the material that alkali is solvable, and the offset therefore formed can be adjusted towards maximizing direction
Whole, and then provide bigger liquid crystal compression allowance for liquid crystal panel.
In order to be able to be further understood that inventive feature and technology contents, refer to below in connection with the present invention is detailed
Illustrate and accompanying drawing, but accompanying drawing only provides reference and explanation use, be not used for the present invention is any limitation as.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings, by the detailed description of the invention of the present invention is described in detail, technical scheme will be made
And other beneficial effect is apparent.
In accompanying drawing,
Fig. 1 is the schematic diagram using intermediate tone mask plate to be exposed negative photo glued membrane；
Fig. 2 is the schematic diagram developing the negative photo glued membrane after Fig. 1 exposes；
Fig. 3 is the schematic diagram that the negative photo glued membrane after Fig. 2 develops carries out photoresist hard baking；
Fig. 4 is the schematic flow sheet of the preparation method of the positivity black photoresist of the present invention；
Fig. 5 is the schematic flow sheet of the manufacture method of the display base plate of the present invention；
Fig. 6-7 is the schematic diagram of the step 2 of the manufacture method of the display base plate of the present invention.
Detailed description of the invention
By further illustrating the technological means and effect, being preferable to carry out below in conjunction with the present invention that the present invention taked
Example and accompanying drawing thereof are described in detail.
Refer to Fig. 4, present invention firstly provides the preparation method of a kind of positivity black photoresist, comprise the steps:
Step 10, black pigment, dispersant and the first solvent are mixed according to the mass ratio of 1:0.5-1.5:3-5,
Obtain black pigment dispersion liquid.
Specifically, described black pigment can use black organic pigment such as flower black, the nigrosine of cyanines etc., colour mixture organic pigment
Pigment as mixed above at least two in red, blue, green, purple, yellow, blue or green, blue and fuchsin, or inorganic series pigments such as white carbon black,
Chromium oxide, ferrum oxide, titanium are black, titanium oxynitride and titanium nitride etc..
Specifically, described step 10 also includes, after black pigment, dispersant and the first solvent being mixed, with the 3rd
This mixture of solvent dilution so as to get the solid content of black pigment dispersion liquid be 20wt%-30wt%.
Specifically, described first and the 3rd solvent be organic solvent, described 3rd solvent is preferably propylene glycol monomethyl ether vinegar
Acid esters (PGMEA), described first solvent is preferably 3-methoxybutyl acetas.
Step 20, according to the mass ratio of 1:4-6, phenolic resin is added in the second solvent, stirring and dissolving under the conditions of lucifuge,
Add adjacent diazonium tea according to the mass ratio of 3wt%-4wt% in obtained positivity photoresistance colloid and make compound, according to
In obtained positivity photoresistance colloid, the mass ratio of 0.005wt%-1wt% adds positivity photoresistance auxiliary agent, obtains positivity photoresistance
Colloid.
Specifically, described second solvent is organic solvent, preferably PGMEA；Described dispersant is preferably BYK-167 (day
This BYK Co., Ltd. system)；Described adjacent diazonium tea makes tetrahydroxybenzophenone-215 diazonium that compound preferably purity is 98%
Naphthoquinone sulfonic acid ester (4HBP-215DNQ)；Described positivity photoresistance auxiliary agent includes Siloxane-Oxyalkylene Copolymers levelling agent (EDL), 4-first
Base-2 pentanone (MIBK) and 4-dihydroxy benaophenonel (HBP), it is preferable that EDL, MIBK and HBP are at obtained positivity photoresistance
In colloid, mass ratio is 0.005wt%-0.4wt%.
Step 30, according to the mass ratio of 0.25-2:1, the black pigment dispersion liquid obtained is homogeneously dispersed in described positivity
In photoresistance colloid, obtain positivity black photoresist.
As a example by below using white carbon black as black pigment, it is for preparing concretely comprising the following steps of positivity black photoresist:
Take white carbon black, dispersant B YK-167 and 3-methoxybutyl acetas 2:1:6 in mass ratio to mix equably, make charcoal
Black it is distributed in 3-methoxybutyl acetas, then, dilutes this mixture with PGMEA, make in the pre-carbon black dispersion liquid obtained
White carbon black solids content about 20wt%, obtains carbon black dispersion liquid.
Take phenolic resin and PGMEA, by the mass ratio of 1:5, phenolic resin is added in PGMEA, stir molten under the conditions of lucifuge
Solve, according still further to 3wt%-4wt% in the positivity photoresistance colloid obtained in advance mass ratio add 4HBP-215DNQ, according to
In the positivity photoresistance colloid obtained in advance, the mass ratio of 0.005wt%-1wt% adds a small amount of positivity photoresistance auxiliary agent, just obtains
Property photoresistance colloid, wherein, positivity photoresistance auxiliary agent includes EDL, MIBK and HBP, obtains positivity photoresistance colloid.
Finally, disperse uniformly, in above-mentioned positivity photoresistance colloid, just to prepare according to the mass ratio of 1:1 by carbon black dispersion liquid
Property black photoresist.
The preparation method of the positivity black photoresist of the present invention, preparation method is simple, utilizes positive photosensitive material to be subject to
Light radiation and there is the characteristic of photolysis reactions, black pigment is dispersed in positive photoresist system, is prepared as positivity black
Photoresist.Prepared positivity black photoresist, the region illuminated through light can remove by developed liquid in developing process,
And the region not being irradiated by light can be retained, the adjacent diazonium tea being exposed in region makes compound generation photolysis weight
Row generates indene carboxylic acid, it is possible to adding and be instantly dissolved in dilute alkaline aqueous solution, unexposed area is not owing to changing, and do not has acceleration,
Thus create differential dissolution rate at exposure region and unexposed area, after dilute alkaline aqueous solution develops, produce positive images.Therefore, should
Positivity black photoresist debugging difficulty in offset formation process is less, only by printing opacities different in design intermediate tone mask version
Multiple area of the pattern of rate value, it is possible to adjust required break difference structure, and technique is more stable.
Referring to Fig. 5, preparation method based on above-mentioned positivity black photoresist, the present invention also provides for a kind of display base
The manufacture method of plate, comprises the steps:
Step 1, provide a underlay substrate 100 and positivity black photoresist, by uniform for described positivity black photoresist
Be coated on described underlay substrate 100, formed black light shield layer 200 ', carry out vacuum suction, take out described positivity black light
Partial solvent in resistance material, carries out front baking the most again.
Specifically, described positivity black photoresist is the positivity photoresistance glue material containing black pigment；Described black face
Material can use black organic pigment such as flower black, the nigrosine of cyanines etc., colour mixture organic pigment the reddest, blue, green, purple, yellow, blue or green, blue and
The pigment that at least two in fuchsin is mixed above, or inorganic series pigments such as white carbon black, chromium oxide, ferrum oxide, titanium are black, oxynitriding
Titanium and titanium nitride etc..
Wherein, described positivity black photoresist uses the preparation method of above-mentioned positivity black photoresist to prepare,
This repeats no more.
Specifically, in described step 1, before carrying out, the baking temperature of baking is 80-120 DEG C, and baking time is 100-150s.
Step 2, as shown in fig. 6-7, it is provided that an intermediate tone mask plate 900, utilizes described intermediate tone mask plate 900 to institute
State black light shield layer 200 ' be exposed and develop, and through solid curing process processing procedure, obtain black matrix" 210 simultaneously and be higher than
The chock insulator matter of described black matrix" 210.
Specifically, described chock insulator matter includes main chock insulator matter 220；The intermediate tone mask plate 900 provided in described step 2 includes
For forming the light tight district 910 of main chock insulator matter 220, for forming the first semi-opaque region 921 and the residue of black matrix" 210
With black matrix" 210 and chock insulator matter with full transparent area 930 corresponding to exterior domain, the 910, first semi-opaque region, described light tight district
921 and the light transmittance of full transparent area 930 is respectively 0, X1%, 100%, wherein, 100 ＞ X1 ＞ 0.
Specifically, the chock insulator matter formed in described step 2 also includes assisting chock insulator matter 230, half provided in described step 2
Tone mask plate 900 also includes the second semi-opaque region 922 for forming auxiliary chock insulator matter 230, described second semi-opaque region 922
Light transmittance be X2%, wherein, X1 ＞ X2 ＞ 0.
The manufacture method of the display base plate of the present invention, uses positivity black photoresist to concurrently form the black with offset
Matrix 210, main chock insulator matter 220 and auxiliary chock insulator matter 230, only by black matrix" corresponding in design intermediate tone mask version 900
210, the light transmittance of the area of the pattern of main chock insulator matter 220 and auxiliary chock insulator matter 230, it is possible to adjust the film thickness difference of each layer, obtain
Required offset, and obtained offset can be adjusted towards maximizing direction, such that it is able to solve currently used negative
Property black photoresist and the offset that the causes problem such as not.
In sum, the preparation method of a kind of positivity black photoresist that the present invention provides, preparation method is simple, made
Standby positivity black photoresist, in offset formation process, debugging difficulty is less, and technique is more stable.The one of present invention offer
Plant the manufacture method of display base plate, use positivity black photoresist to concurrently form black matrix" and the chock insulator matter with offset,
In technique, debugging difficulty is less, and technique is more stable, further, since be irradiated by light after make positivity black photoresist occur
Photolysis reactions generates the material that alkali is solvable, and the offset therefore formed can be adjusted towards maximizing direction, and then permissible
Bigger liquid crystal compression allowance is provided for liquid crystal panel.
The above, for the person of ordinary skill of the art, can be according to technical scheme and technology
Other various corresponding changes and deformation are made in design, and all these change and deformation all should belong to the claims in the present invention
Protection domain.
Claims (10)
1. the preparation method of a positivity black photoresist, it is characterised in that comprise the steps:
Step 10, by black pigment, dispersant and the first solvent mix, obtain black pigment dispersion liquid；
Step 20, phenolic resin is added in the second solvent, stirring and dissolving under the conditions of lucifuge, it is subsequently adding adjacent diazonium tea and makes chemical combination
Thing and positivity photoresistance auxiliary agent, obtain positivity photoresistance colloid；
Step 30, the black pigment dispersion liquid obtained is homogeneously dispersed in described positivity photoresistance colloid, obtains positivity black
Photoresist.
2. the preparation method of positivity black photoresist as claimed in claim 1, it is characterised in that described black pigment is flower
Cyanines are black, nigrosine, white carbon black, chromium oxide, ferrum oxide, titanium are black, titanium oxynitride, titanium nitride or colour mixture organic pigment；Wherein, described
The pigment that colour mixture organic pigment is red, blue, green, purple, yellow, blue or green, blue and in fuchsin organic pigment, at least two is mixed above.
3. the preparation method of positivity black photoresist as claimed in claim 1, it is characterised in that in described step 10 according to
Black pigment, dispersant and the first solvent are mixed by the mass ratio of 1:0.5-1.5:3-5；Described step 10 also includes, will
After black pigment, dispersant and the first solvent mix, with the 3rd this mixture of solvent dilution so as to get black pigment
The solid content of dispersion liquid is 20wt%-30wt%；Described first, second and the 3rd solvent be organic solvent.
4. the preparation method of positivity black photoresist as claimed in claim 1, it is characterised in that in described step 20, press
Phenolic resin is added the second solvent, according to 3wt%-4wt% in obtained positivity photoresistance colloid by the mass ratio according to 1:4-6
Mass ratio add adjacent diazonium tea and make compound, according to 0.005wt%-1wt% in obtained positivity photoresistance colloid
Mass ratio adds positivity photoresistance auxiliary agent.
5. the preparation method of positivity black photoresist as claimed in claim 3, it is characterised in that described first solvent is 3-
Methoxybutyl acetas；Described second and the 3rd solvent be propylene glycol methyl ether acetate；Described dispersant is BYK-167；Institute
Stating adjacent diazonium tea and making compound is tetrahydroxybenzophenone-215 diazonium naphthoquinone sulphonate；Described positivity photoresistance auxiliary agent includes polyethers
Modified polyorganosiloxane levelling agent, 4-methyl-2 pentanone and 4-dihydroxy benaophenonel.
6. the manufacture method of a display base plate, it is characterised in that comprise the steps:
Step 1, provide a underlay substrate (100) and positivity black photoresist, by uniform for described positivity black photoresist
It is coated on described underlay substrate (100), forms black light shield layer (200 '), carry out vacuum suction, take out described positivity black
Partial solvent in photoresist, carries out front baking the most again；
Described positivity black photoresist is the positivity photoresistance glue material containing black pigment；
Step 2, one intermediate tone mask plate (900) of offer, utilize described intermediate tone mask plate (900) to described black light shield layer
(200 ') are exposed and develop, and through solid curing process processing procedure, obtain black matrix" (210) and higher than described black simultaneously
The chock insulator matter of matrix (210)；
Described chock insulator matter includes main chock insulator matter (220)；The intermediate tone mask plate (900) provided in described step 2 includes for shape
Become the light tight district (910) of main chock insulator matter (220), be used for being formed first semi-opaque region (921) of black matrix" (210) and remain
Remaining full transparent area (930), described light tight district (910), the first semi-opaque region (921) and the light transmittance of full transparent area (930)
Be respectively 0, X1%, 100%, wherein, 100 ＞ X1 ＞ 0.
7. the manufacture method of display base plate as claimed in claim 6, it is characterised in that described black pigment is black for flower cyanines, benzene
Amido black, white carbon black, chromium oxide, ferrum oxide, titanium are black, titanium oxynitride, titanium nitride or colour mixture organic pigment；Wherein, described colour mixture is organic
The pigment that pigment is red, blue, green, purple, yellow, blue or green, blue and in fuchsin organic pigment, at least two is mixed above.
8. the manufacture method of display base plate as claimed in claim 6, it is characterised in that in described step 1, baking before carrying out
Baking temperature is 80-120 DEG C, and baking time is 100-150s.
9. the manufacture method of display base plate as claimed in claim 6, it is characterised in that the chock insulator matter formed in described step 2
Also include assist chock insulator matter (230), in described step 2 provide intermediate tone mask plate (900) also include for formed auxiliary every
Second semi-opaque region (922) of underbed (230), the light transmittance of described second semi-opaque region (922) is X2%, wherein, X1 ＞ X2
＞ 0.
10. the manufacture method of display base plate as claimed in claim 6, it is characterised in that positivity black photoresistance in described step 1
The concrete preparation process of material includes:
Step 10, black pigment, dispersant and the first solvent are mixed, obtain black pigment dispersion liquid；
Step 20, phenolic resin is added in the second solvent, stirring and dissolving under the conditions of lucifuge, it is subsequently adding adjacent diazonium tea and makes chemical combination
Thing and positivity photoresistance auxiliary agent, obtain positivity photoresistance colloid；
Step 30, the black pigment dispersion liquid obtained is homogeneously dispersed in described positivity photoresistance colloid, obtains positivity black
Photoresist.
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| CN201610567439.1A CN106054531B (en) | 2016-07-18 | 2016-07-18 | The production method of the preparation method and display base plate of positivity black photoresist |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107193183A (en) * | 2017-07-20 | 2017-09-22 | 深圳市华星光电技术有限公司 | The preparation method of liquid crystal panel |
| WO2018082396A1 (en) * | 2016-11-01 | 2018-05-11 | 京东方科技集团股份有限公司 | Mask plate |
| WO2018113168A1 (en) * | 2016-12-20 | 2018-06-28 | 惠科股份有限公司 | Display panel, production process for display panel, and photomask for production process |
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| CN110396315A (en) * | 2019-07-22 | 2019-11-01 | 深圳市华星光电技术有限公司 | It is modified to repair liquid, preparation method and the method for repairing color blocking |
| CN114515600A (en) * | 2020-11-18 | 2022-05-20 | 万华化学集团股份有限公司 | Titanium nitride-polyaniline catalyst modified by metal impurity elements, preparation method and application thereof in synthesis of p-hydroxyanisole |
| CN114515600B (en) * | 2020-11-18 | 2023-08-11 | 万华化学集团股份有限公司 | Metal hetero element modified titanium nitride-polyaniline catalyst, preparation method and application thereof in synthesizing para-hydroxyanisole |
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