CN106048522B - The preparation method of a kind of touch screen cover board and film, application - Google Patents
The preparation method of a kind of touch screen cover board and film, application Download PDFInfo
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- CN106048522B CN106048522B CN201610338200.7A CN201610338200A CN106048522B CN 106048522 B CN106048522 B CN 106048522B CN 201610338200 A CN201610338200 A CN 201610338200A CN 106048522 B CN106048522 B CN 106048522B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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Abstract
The invention discloses the preparation method of a kind of touch screen cover board and film, applications.The preparation method of touch screen cover board film includes the following steps：1. using oxygen as reaction gas, using argon gas as sputter gas, with silicon target, reactive sputtering forms silicon oxide film on resin substrate；2. with nitrogen as sputter gas and reaction gas, with zinc target, reactive sputtering forms zinc nitride film on the resin substrate for be coated with silicon oxide film；3. using nitrogen as reaction gas, using argon gas as sputter gas, with silicon target on the resin substrate for be coated with zinc nitride film reactive sputtering formed silicon nitride film to get.The touch screen cover board film production efficiency of the present invention is high, plated film yield is high, production cost is low；Case hardness is high, and scratch resistance can be stronger with wearability；Surface energy is higher, being capable of effective adhering LCD；Segment difference effect can be eliminated；It can be applied on resin substrate touch screen, touch screen cover board is made.
Description
Technical field
The present invention relates to the preparation method of a kind of touch screen cover board and film, applications.
Background technology
With the development of science and technology the development of smart machine, gets over the touch screen demand as human-computer interaction primary window
Come it is more vigorous, in recent years year shipment amount in formula growth of being packed, the technological innovation with smart machine manufacturing enterprise and fierceness
Competition, more stringent requirements are proposed for production technology and cost to touch screen.The optics cover board of touch screen is as touch screen master
Functional component is wanted, is had to optics covering area's production technology and production cost of the areas BM (black matrix" Black Matrix) higher
Requirement.
The traditional areas touch screen cover board BM light shield layer is mainly realized using the screen printing technique of black ink.However silk
The technology of printing ink there are plated film yields it is low, production cost is higher, low production efficiency the defects of, and due to touch screen cover board need
Fitting use is carried out with liquid crystal display (Liquid Crystal Display, abbreviation LCD), it is desirable that cover board and ink are all
It must be with OCA optical cements (Optically Clear Adhesive) or OCR optical resins (Optically Clear Resin)
It can be compatible with well, but in actual mechanical process, ink bubble often occurs with being bonded for OCA optical cements, can not be perfect
Fitting, moreover, when products obtained therefrom carries out patience test (85 DEG C, 85%RH, 500h) again after fitting, it may appear that large area bubble,
Influence appearance or the use of product.
Juza and Hahn synthesize zinc nitride (Zn for the first time within 19403N2) material, and determine Zn3N2For black, have anti-
Scandium oxide structure, a kind of CaF2Derivative strucure, wherein N atoms occupy the position of Ca atoms, and Zn atoms occupy 3/4F atoms
Position.Hereafter Zn3N2The research of material is constantly in dead state.1993, people were prepared various using chemical method
Zn3N2Film, such as heating evaporation Zn films, in NH3Anneal under environment, make Zn films directly reacted with ammonia prepared it is more
Brilliant Zn3N2Film (Zn3N2The optical band gap of film is 3.2eV).1998, people prepared Zn with magnetron sputtering methodxOyNz
Film, and the optical band gap of the film is obtained, with the increase of N element, 2.3eV is changed to from 3.2eV.The same year, Futsuhara are used
Pure Zn is prepared in magnetron sputtering method3N2Film has studied its structure, electrical and optical properties, it is believed that Zn3N2Material is that have
The n-type semiconductor of direct band gap 1.23eV.
Currently, having existed the case where preparing zinc nitride film using magnetron sputtering technique in the prior art, specially：
During vacuum magnetic-control sputtering, argon gas is as sputter gas, and nitrogen is as reaction gas.Although such plated film mode really may be used
To obtain zinc nitride film, but the reflectivity on the obtained zinc nitride film surface of the plated film mode is higher, is not pure black
Color.The problems demand solves.
Invention content
It is in the prior art nitridation by magnetron sputtering technique preparation the technical problem to be solved by the present invention is to overcome
Zinc film surface reflectivity is higher, and is preparing the areas touch screen cover board BM light shield layer using the screen printing of black ink
When, plated film yield is low, production cost is high, low production efficiency, and products obtained therefrom is bonded with liquid crystal display in use, being also easy to produce
Bubble cannot achieve the defect of perfect fitting, provide preparation method, the application of a kind of touch screen cover board and film.The present invention's
Zinc nitride film is uniformly complete, and Zn-ef ficiency all nitrogenizes, and surface reflectivity is relatively low；The touch screen cover board film production efficiency of the present invention
High, plated film yield height, production cost are low；Case hardness is high, and scratch resistance can be stronger with wearability；Surface energy is higher, Neng Gouyou
The adhering LCD of effect；Segment difference effect can be eliminated.
The present invention solves above-mentioned technical problem by the following technical programs.
The present invention provides a kind of preparation methods of the touch screen cover board film comprising following steps：
(1) using oxygen as reaction gas, using argon gas as sputter gas, with silicon target, reactive sputtering forms oxygen on resin substrate
SiClx film must be coated with the resin substrate of silicon oxide film；
Wherein, the operating air pressure of the reactive sputtering is 3 × 10-3~11 × 10-3mbar；The volume flow of the argon gas
Gas flow for 400~800sccm, the oxygen is 200~500sccm；The thickness of the silicon oxide film be 10~
20nm；
(2) with nitrogen as sputter gas and reaction gas, the tree of silicon oxide film is coated with obtained by step (1) with zinc target
Reactive sputtering forms zinc nitride film on aliphatic radical plate, must be coated with the resin substrate of zinc nitride film；
Wherein, the operating air pressure of the reactive sputtering is 2 × 10-3~11 × 10-3mbar；The process of the reactive sputtering
In, plated film power is 5~15kW；The thickness of the zinc nitride film is 10~50nm；
(3) using nitrogen as reaction gas, using argon gas as sputter gas, zinc nitride is coated with obtained by step (2) with silicon target
Reactive sputtering forms silicon nitride (Si on the resin substrate of film3N4) film is to get the touch screen cover board film；
Wherein, the operating air pressure of the reactive sputtering is 3 × 10-3~11 × 10-3mbar。
In step (1), the resin substrate is to be made after being handled by this field conventional method, usually according to practical need
It asks, to needing the part of black mask to carve in the resin substrate of coated with protective film, tears and need black mask part
Protective film, leave the protective film without black mask part to get.After the operation of step (3), the engraving can be generally torn off
Protective film afterwards, then on the outside of the touch screen cover board film stick complete protective film again.
Wherein, the protective film is the plastic protective film for plastics of this field routine.The method and condition of the engraving is this field
Conventional method and condition generally uses computer numerical control (CNC) (Computer numerical control, abbreviation CNC) to carve
Quarter, machine carved.Before the operation of the engraving, generally by the glass substrate according to the touch screen cover board of actual demand
Size cut.
In step (1), the reactive sputtering the step of before, preferably, the resin substrate is cleaned.It is described
Cleaning operation and operation that condition is this field routine and condition, the mode of the cleaning preferably uses plasma clear
Equipment is washed to be cleaned.
In step (1), the argon gas is that chemistry receives conventional use of argon gas, and purity is preferably 99.99%.The argon
The flow of gas is preferably 550~650sccm, is more preferably 600sccm.If the volume flow of the argon gas is excessively high, it is easy to make
Bigger than normal at operating air pressure, quality of forming film is deteriorated, if the volume flow of the argon gas is too small, be easy to cause silicon peroxide chemical conversion SiO2。
The oxygen is that chemistry receives conventional use of oxygen, and purity is preferably 99.99%.If the volume flow mistake of the oxygen
Height be easy to cause silicon and is completely oxidized to SiO2If the volume flow of the oxygen is too low, there will be elementary silicon depositions.It is described
The flow of oxygen is preferably 200~400sccm.
In step (1), the silicon target is silicon target commonly used in the art, and purity is preferably 99.99% or more.Work as mesh
After the speed of travel of the thickness and resin substrate of marking film determines, the dosage of the silicon target is sieved according to common sense in the field
Choosing.In the present invention, the dosage of the silicon target is preferably 1~2 rotating cathode silicon target.
In step (1), in the reactive sputtering process, plated film power and operating temperature are this field routine.
In step (1), if the thickness G T.GT.GT 20nm of the silicon oxide film, to reach the thickness, then need to increase target
Dosage or reduce linear velocity, thus lead to that the sputtering yield of silica is relatively low or cost is higher；If the silicon oxide film
Thickness ＜ 10nm, then be unable to reach the requirement of adhesive force.
In step (1), the thickness of the silicon oxide film is preferably 15nm.
In step (2), the nitrogen is that chemistry receives conventional use of nitrogen, and purity is preferably 99.99%.Described
In the preparation method of zinc nitride film, the nitrogen serves not only as sputter gas, while being also used as reaction gas.The nitrogen
Volume flow is that this field is conventional, and preferably 600~1400sccm is more preferably 900~1100sccm, most preferably for
1000sccm。
In step (2), the zinc target is silicon target commonly used in the art, and purity is preferably 99.99% or more.Work as mesh
After the speed of travel of the thickness and substrate of marking film determines, the dosage of the zinc target is screened according to common sense in the field.This
In invention, the dosage of the zinc target is that this field is conventional, preferably 1~2 rotating cathode zinc target.
In step (1)~(3), during the reactive sputtering, background vacuum is that this field is conventional, preferably
≤9×10-6mbar.The background vacuum refers to being made in certain space using vacuum-pumping system in vacuum coating
Gas reaches certain vacuum degree, and this vacuum degree be able to meet vacuum degree required when this kind of plated article deposition.
In step (1)~(3), during the reactive sputtering, target is conventional for this field at a distance from substrate, compared with
It is goodly 50~90mm, is more preferably 70nm.
In step (2), during the reactive sputtering, operating temperature is that this field is conventional, preferably 50~120
DEG C, it is more preferably 80 DEG C.
In step (1)~(3), the operating air pressure of the reactive sputtering is preferably 4 × 10-3~5 × 10-3mbar。
In step (2), during the reactive sputtering, the mode of plated film is that this field is conventional, preferably horizontal
Travelling.During level is advanced, the linear velocity actually walked can carry out this field according to target coating film thickness according to common sense
Conventional selection.During level is advanced, linear velocity is that this field is conventional, preferably 2~4m/min.
In step (2), the plated film power is preferably 8~12kW, is more preferably 10kW.
In step (2), if the thickness G T.GT.GT 50nm of the zinc nitride film, it will cause adhesion of thin film declines；If institute
The thickness ＜ 10nm for stating zinc nitride film, have light transmission, cannot achieve close lighttight effect.The zinc nitride film is to visible
It is in black that light, which has stronger absorption, appearance, is the functional layer as black film.
In step (2), the thickness of the zinc nitride film is preferably 10~30nm, is more preferably 25nm.
In step (3), the silicon target is silicon target commonly used in the art, and purity is preferably 99.99% or more.Work as mesh
After the speed of travel of the thickness and resin of marking film determines, the dosage of the silicon target is screened according to common sense in the field.Institute
The dosage for stating silicon target is that this field is conventional, and preferably 3~5 rotating cathode silicon targets are more preferably 4 rotating cathode silicon targets.
In step (3), the nitrogen is that chemistry receives conventional use of nitrogen, and purity is preferably 99.99%.The nitrogen
The volume flow of gas is preferably 450~850sccm, is more preferably 500~600sccm.The argon gas is that chemistry receives routine
The nitrogen used, purity are preferably 99.99%.The gas flow of the argon gas is preferably 200~700sccm, more preferably
It is most preferably 500sccm for 350~650sccm.
In step (3), in the reactive sputtering process, plated film power and operating temperature are this field routine.
In step (3), the thickness of the silicon nitride film is that this field is conventional, generally 50~150nm, preferably
100nm.Consider production efficiency, internal stress, mechanical performance and the effect of as protective layer etc. factors influence, this
Field technology personnel generally can select thickness for the silicon nitride film of 50~150nm.The tool intensity of the silicon nitride film is higher,
Film is fine and close, can not be scraped off and decompose oxidation by zinc nitride film described in effective protection.
In step (3), the other side of the silicon nitride film is preferably also provided with a protective film.The protective film is ability
The plastic protective film for plastics of domain routine.
The present invention also provides one kind touch screen cover board film made from above-mentioned preparation method.
The present invention also provides a kind of application of touch screen cover board film on resin substrate touch screen, the touch screens
The silicon oxide film of cover board film is connected with the resin substrate.
In the present invention, the resin substrate is the resin substrate of this field routine, preferably polymethyl methacrylate
Substrate.
In the present invention, silica (SiO) film is transition zone, with the resin substrate, the zinc nitride film
Adhesive force is preferable, can effectively connect the resin substrate and the zinc nitride film, reaches secured, not demoulding effect
Fruit.
The present invention also provides a kind of touch screen cover boards comprising a resin substrate and a foregoing touch screen cover board
The silicon oxide film of film, the touch screen cover board film is connected with the resin substrate.
On the basis of common knowledge of the art, above-mentioned each optimum condition can be combined arbitrarily to get each preferable reality of the present invention
Example.
The raw materials used in the present invention is commercially available.
The positive effect of the present invention is that：
1, production efficiency is high, promotes about 4~7 times；
2, inventive touch screen cover board film plated film yield >=98%, the size Control of plated film range are more accurate；
3, production cost is low, reduces about 50 times；
4, case hardness >=6H of inventive touch screen cover board film；
5, the outermost surface of inventive touch screen cover board film can be higher, the bonding with OCA optical cements or OCR optical resins
Better performances, can effectively be bonded LCD, and bubble-free generates；After the test of the patience of 85 DEG C × 85%RH × 500h, it is not easy
Bubble is generated, adhesion strength does not also reduce；
6, the black shading film of inventive touch screen cover board film is relatively thin, and thickness about 70~220nm, relatively thin film can have
Effect reduces the segment difference problem of black light-blocking film edge, prevents cover board from bubble occur in fitting, is more advantageous to cover board and the patch of LCD
It closes；
7, the surface scratch resistance energy of inventive touch screen cover board film and wearability are stronger：1kg pressure is applied to the cotton that gets wet
On cloth, in two kinds of touch screen cover board films, upper drop upper 10 is dripped or alcohol respectively, is carried out friction and is tested for 20 times, surface not demoulding.
Description of the drawings
Fig. 1 is the structural schematic diagram of the touch screen cover board of embodiment 1, wherein 1 is protective film, and 2 be silicon nitride film, and 3 are
Zinc nitride film, 4 be silicon oxide film, and 5 be resin substrate.
Specific implementation mode
It is further illustrated the present invention below by the mode of embodiment, but does not therefore limit the present invention to the reality
It applies among a range.In the following examples, the experimental methods for specific conditions are not specified, according to conventional methods and conditions, or according to quotient
Product specification selects.
Embodiment 1
The touch screen cover board film of the present embodiment includes silicon monoxide (SiO) film, a zinc nitride (Zn successively3N2) thin
Film, a silicon nitride (Si3N4) film and a protective film；Wherein, the thickness of silicon oxide film is 10nm, the thickness of zinc nitride film
Thickness for 10nm, silicon nitride film is 50nm, and protective film is the plastic protective film for plastics of this field routine.
The touch screen cover board of the present embodiment a comprising resin substrate and an above-mentioned touch screen cover board film, touch screen cover board
The silicon oxide film of film is connected with resin substrate.
Fig. 1 is the structural schematic diagram of the touch screen cover board of embodiment 1, wherein 1 is protective film, and 2 be silicon nitride film, and 3 are
Zinc nitride film, 4 be silicon oxide film, and 5 be resin substrate.
The preparation method of the compound resin cover board of the present embodiment includes the following steps：
(1) to posting the resin substrate of this field common plastics protective film (before the operation of engraving, generally by resin base
Plate is cut according to the size of actual demand) in need the part of black mask, to use computer numerical control (CNC) (Computer
Numerical control, abbreviation CNC) engraving machine carved, tears the protective film for needing black mask part, leave nothing
The protective film of black mask part is needed, the resin substrate of plated film must be needed；
The resin substrate of plated film will be needed to clean using plasma cleaning equipment；
Using oxygen as reaction gas, using argon gas as sputter gas, with the resin substrate for needing plated film of silicon target after cleaning
Upper reactive sputtering forms silicon oxide film, must be coated with the resin substrate of silicon oxide film；
Wherein, the purity of oxygen is 99.99%, and the gas flow of oxygen is 200sccm；The purity of argon gas is 99.99%,
The volume flow of argon gas is 600sccm；The operating air pressure of reactive sputtering is 4 × 10-3mbar；Silicon target is at a distance from substrate
70mm；Background vacuum is≤9 × 10-6mbar；The purity of silicon target is 99.99% or more, and dosage is 1 rotating cathode silicon target；
(2) with nitrogen as sputter gas and reaction gas, the tree of silicon oxide film is coated with obtained by step (1) with zinc target
Reactive sputtering forms zinc nitride film on aliphatic radical plate, must be coated with the resin substrate of zinc nitride film；
Wherein, the purity of nitrogen is 99.99%, and the volume flow of nitrogen is 1000sccm；The purity of zinc target is 99.99%
More than, dosage is 1 rotating cathode zinc target；The operating air pressure of reactive sputtering is 4 × 10-3Mbar, plated film power are 10kW；Work
Temperature is 80 DEG C；Zinc target is 70mm at a distance from substrate；Background vacuum is≤9 × 10-6mbar；The mode of plated film is horizontal line
Into formula, during level is advanced, linear velocity 4m/min；
(3) using nitrogen as reaction gas, using argon gas as sputter gas, zinc nitride is coated with obtained by step (2) with silicon target
Reactive sputtering forms zinc nitride (Si on the resin substrate of film3N4) film is to get touch screen cover board film；
Wherein, the purity of nitrogen is 99.99%, and the volume flow of nitrogen is 600sccm；The purity of argon gas is 99.99%,
The gas flow of argon gas is 500sccm；The purity of silicon target is 99.99% or more, and dosage is 3 rotating cathode silicon targets；Reaction is splashed
The operating air pressure penetrated is 4 × 10-3mbar；Silicon target is 70mm at a distance from substrate；Background vacuum is≤9 × 10-6mbar；
After step (3), the protective film carved in also tear-off touch screen cover board film, then again in touch screen cover board
Complete protective film is sticked on the outside of film.
Embodiment 2
The touch screen cover board film of the present embodiment includes silicon monoxide (SiO) film, a zinc nitride (Zn successively3N2) thin
Film, a silicon nitride (Si3N4) film and a protective film；Wherein, the thickness of silicon oxide film is 20nm, the thickness of zinc nitride film
Thickness for 30nm, silicon nitride film is 150nm, and protective film is the plastic protective film for plastics of this field routine.
The touch screen cover board of the present embodiment a comprising resin substrate and an above-mentioned touch screen cover board film, touch screen cover board
The silicon oxide film of film is connected with resin substrate.
For the preparation method of the compound resin cover board of the present embodiment in addition to parameters described below, remaining is same as Example 1：
In step (1), the operating air pressure of reactive sputtering is 11 × 10-3mbar；The volume flow of argon gas is 800sccm, oxygen
The gas flow of gas is 500sccm；The dosage of silicon target is 2 rotating cathode silicon targets；Silicon target is 90mm at a distance from substrate；
In step (2), the operating air pressure of reactive sputtering is 11 × 10-3Mbar, plated film power are 15kW；The volume flow of nitrogen
Amount is 900sccm；The dosage of zinc target is 2 rotating cathode zinc targets；Operating temperature is 120 DEG C；Zinc target is at a distance from substrate
90mm；Background vacuum is≤9 × 10-6mbar；The mode of plated film is horizontal travelling, during level is advanced, linear velocity
For 2m/min；
In step (3), the operating air pressure of reactive sputtering is 11 × 10-3mbar；The volume flow of nitrogen is 500sccm, argon
The gas flow of gas is 700sccm；The dosage of silicon target is 5 rotating cathode silicon targets；Silicon target is 90mm at a distance from substrate.
Embodiment 3
The touch screen cover board film of the present embodiment includes silicon monoxide (SiO) film, a zinc nitride (Zn successively3N2) thin
Film, a silicon nitride (Si3N4) film and a protective film；Wherein, the thickness of silicon oxide film is 15nm, the thickness of zinc nitride film
Thickness for 50nm, silicon nitride film is 100nm, and protective film is the plastic protective film for plastics of this field routine.
The touch screen cover board of the present embodiment a comprising resin substrate and an above-mentioned touch screen cover board film, touch screen cover board
The silicon oxide film of film is connected with resin substrate.
For the preparation method of the compound resin cover board of the present embodiment in addition to parameters described below, remaining is same as Example 1：
In step (1), the operating air pressure of reactive sputtering is 5 × 10-3mbar；The volume flow of argon gas is 400sccm, oxygen
Gas flow be 200sccm；The dosage of silicon target is 2 rotating cathode silicon targets；Silicon target is 50mm at a distance from substrate；
In step (2), the operating air pressure of reactive sputtering is 2 × 10-3Mbar, plated film power are 5kW；The volume flow of nitrogen
For 1100sccm；The dosage of zinc target is 2 rotating cathode zinc targets；Operating temperature is 50 DEG C；Zinc target is 50mm at a distance from substrate；
The mode of plated film is horizontal travelling, during level is advanced, linear velocity 2m/min；
In step (3), the operating air pressure of reactive sputtering is 5 × 10-3mbar；The volume flow of nitrogen is 450sccm, argon gas
Gas flow be 350sccm；The dosage of silicon target is 4 rotating cathode silicon targets；Silicon target is 50mm at a distance from substrate.
Embodiment 4
The touch screen cover board film of the present embodiment includes silicon monoxide (SiO) film, a zinc nitride (Zn successively3N2) thin
Film, a silicon nitride (Si3N4) film and a protective film；Wherein, the thickness of silicon oxide film is 15nm, the thickness of zinc nitride film
Thickness for 50nm, silicon nitride film is 100nm, and protective film is the plastic protective film for plastics of this field routine.
The touch screen cover board of the present embodiment a comprising resin substrate and an above-mentioned touch screen cover board film, touch screen cover board
The silicon oxide film of film is connected with resin substrate.
For the preparation method of the compound resin cover board of the present embodiment in addition to parameters described below, remaining is same as Example 1：
In step (1), the operating air pressure of reactive sputtering is 3 × 10-3mbar；The volume flow of argon gas is 550sccm, oxygen
Gas flow be 400sccm；The dosage of silicon target is 2 rotating cathode silicon targets；Silicon target is 50mm at a distance from substrate；
In step (2), the operating air pressure of reactive sputtering is 5 × 10-3Mbar, plated film power are 8kW；The volume flow of nitrogen
For 600sccm；The dosage of zinc target is 2 rotating cathode zinc targets；Operating temperature is 50 DEG C；Zinc target is 50mm at a distance from substrate；
The mode of plated film is horizontal travelling, during level is advanced, linear velocity 2m/min；
In step (3), the operating air pressure of reactive sputtering is 3 × 10-3mbar；The volume flow of nitrogen is 850sccm, argon gas
Gas flow be 650sccm；The dosage of silicon target is 4 rotating cathode silicon targets；Silicon target is 50mm at a distance from substrate.
Embodiment 5
The touch screen cover board film of the present embodiment includes silicon monoxide (SiO) film, a zinc nitride (Zn successively3N2) thin
Film, a silicon nitride (Si3N4) film and a protective film；Wherein, the thickness of silicon oxide film is 15nm, the thickness of zinc nitride film
Thickness for 25nm, silicon nitride film is 150nm, and protective film is the plastic protective film for plastics of this field routine.
The touch screen cover board of the present embodiment a comprising resin substrate and an above-mentioned touch screen cover board film, touch screen cover board
The silicon oxide film of film is connected with resin substrate.
For the preparation method of the compound resin cover board of the present embodiment in addition to parameters described below, remaining is same as Example 1：
In step (1), the operating air pressure of reactive sputtering is 5 × 10-3mbar；The volume flow of argon gas is 650sccm, oxygen
Gas flow be 400sccm；The dosage of silicon target is 2 rotating cathode silicon targets；
In step (2), the operating air pressure of reactive sputtering is 5 × 10-3Mbar, plated film power are 12kW；The volume flow of nitrogen
Amount is 1400sccm；The dosage of zinc target is 1 rotating cathode zinc target；The mode of plated film is horizontal travelling, is traveled across in level
Cheng Zhong, linear velocity 2m/min；
In step (3), the gas flow of argon gas is 200sccm；The dosage of silicon target is 5 rotating cathode silicon targets.
Effect example 1
The zinc nitride film of the embodiment of the present invention 1~5 is uniformly complete, and Zn-ef ficiency all nitrogenizes, and has to visible light relatively strong
Absorption, appearance be in black, can be used as the functional layer of black film.Reflection optical data (the testing standard CIE of zinc nitride film
1964)：Frontside reflectivity≤6%, reverse side reflectivity≤10%, L*≤ 35, -2≤a*≤ 2, -2≤b*≤2；Black region it is visible
(International Commission on Illumination (CIE) is defined as light transmission rate≤1% about colour index：L*For luminance index, a*For red green degree
Index, b*For champac level index, No. * is that combination one is reinstated).
Touch screen cover board film of the embodiment of the present invention 1~5 and preparation method thereof has following positive effect：
1, production efficiency is high, promotes about 4~7 times：The preparation method of the present invention uses large area substrates (550 × 820mm)
Magnetron sputtering plating is carried out, a sheet material is cleavable at 10~20 touch screen cover boards, and plated film is horizontal continuous plated film,
One stove can place 3 big plates, and about 1min completes the big plate plated film of three pieces.And the mode of production of silk-screen printing can also carry out once greatly
Plate (550 × 820mm) prints, and ink printing needs to carry out twice of printing, and needs to carry out about after each time printing
The baking of 40min；
2, plated film yield >=98% of inventive touch screen cover board film, the size Control of plated film range are more accurate；And silk
Net mode of printing easy tos produce the light transmission defect of pin hole, and yield is only 80~90%；
3, production cost of the present invention is low, reduces about 50 times：It is used herein to target have Si targets and Zn targets, each target
About 2~40,000/root of material unit price, a target can use about 900 hours, and the service efficiency of raw material is up to 90% or more；This hair
Open-birth production. art, which takes around, uses 8 Si targets, 2 Zn targets, is less than 400,000 cost of raw material, can produce about 160,000 big
Plate.And screen printing ink printing process, 160,000 big plate need about 15,000,000 ink expense；
4, case hardness >=6H of inventive touch screen cover board film, and product hardness one made from silk screening ink method
As all ＜ HB；
5, the outermost surface of inventive touch screen cover board film can be higher, the bonding with OCA optical cements or OCR optical resins
Better performances, can effectively be bonded LCD, and bubble-free generates；After the test of the patience of 85 DEG C × 85%RH × 500h, it is not easy
Bubble is generated, adhesion strength does not also reduce；And product made from silk screening ink method easy tos produce bubble；
6, the black shading film of inventive touch screen cover board film is relatively thin, and thickness about 70~220nm, relatively thin film can have
Effect reduces the segment difference problem of black light-blocking film edge, prevents cover board from bubble occur in fitting, is more advantageous to cover board and the patch of LCD
It closes；And about 8~12 μm of the thickness of silk screening ink, with non-oil ink-covered area there are step segment difference, which is easy Tibetan dirt and receives ink
Dirt, and bubble is generated after fitting；
7, the surface scratch resistance energy of inventive touch screen cover board film and wearability are stronger：1kg pressure is applied to the cotton that gets wet
On cloth, in two kinds of touch screen cover board films, upper drop upper 10 is dripped or alcohol respectively, is carried out friction and is tested for 20 times, surface not demoulding.
The touch screen cover board film of the embodiment of the present invention 1~5 is tested for the property, specific test data is as shown in table 1 below.
Table 1
Claims (10)
1. a kind of preparation method of touch screen cover board film, which is characterized in that be following steps：
(1) using oxygen as reaction gas, using argon gas as sputter gas, with silicon target, reactive sputtering forms silica on resin substrate
Film must be coated with the resin substrate of silicon oxide film；
Wherein, the operating air pressure of the reactive sputtering is 3 × 10-3~11 × 10-3mbar；The volume flow of the argon gas is 400
The gas flow of~800sccm, the oxygen are 200~500sccm；The thickness of the silicon oxide film is 10~20nm；
(2) with nitrogen as sputter gas and reaction gas, the resin base of silicon oxide film is coated with obtained by step (1) with zinc target
Reactive sputtering forms zinc nitride film on plate, must be coated with the resin substrate of zinc nitride film；
Wherein, the operating air pressure of the reactive sputtering is 2 × 10-3~11 × 10-3mbar；During the reactive sputtering, plating
Film power is 5~15kW；It is in black that the zinc nitride film has stronger absorption, appearance to visible light, and thickness is 10~50nm；
(3) using nitrogen as reaction gas, using argon gas as sputter gas, zinc nitride film is coated with obtained by step (2) with silicon target
Resin substrate on reactive sputtering formed silicon nitride film to get the touch screen cover board film；
Wherein, the operating air pressure of the reactive sputtering is 3 × 10-3~11 × 10-3mbar。
2. preparation method as described in claim 1, which is characterized in that in step (1), the thickness of the silicon oxide film is
15nm；
In step (2), the thickness of the zinc nitride film is 10~30nm；
In step (3), the thickness of the silicon nitride film is 50~150nm；
The other side of the silicon nitride film is additionally provided with a protective film.
3. preparation method as described in claim 1, which is characterized in that in step (1), the reactive sputtering the step of it
Before, the resin substrate is cleaned；The mode of the cleaning is to be cleaned using plasma cleaning equipment；
In step (1), the purity of the argon gas is 99.99%；The flow of the argon gas is 550~650sccm；
In step (1), the purity of the oxygen is 99.99%；The flow of the oxygen is 200~400sccm；
In step (1), the purity of the silicon target is 99.99% or more；The dosage of the silicon target is 1~2 rotating cathode silicon target.
4. preparation method as described in claim 1, which is characterized in that in step (2), during the reactive sputtering,
Operating temperature is 50~120 DEG C；
In step (2), the plated film power is 8~12kW；
In step (2), the purity of the nitrogen is 99.99%；The volume flow of the nitrogen is 600~1400sccm；
In step (2), the purity of the zinc target is 99.99% or more；The dosage of the zinc target is 1~2 rotating cathode zinc target.
5. preparation method as described in claim 1, which is characterized in that in step (1)~(3), in the mistake of the reactive sputtering
Cheng Zhong, background vacuum are≤9 × 10-6mbar；
In step (1)~(3), target is 50~90mm at a distance from substrate；
In step (1)~(3), the operating air pressure of the reactive sputtering is 4 × 10-3~5 × 10-3mbar；
In step (2), during the reactive sputtering, the mode of plated film is horizontal travelling；During level is advanced,
Linear velocity is 2~4m/min.
6. preparation method as described in claim 1, which is characterized in that in step (3), the purity of the silicon target is 99.99%
More than；The dosage of the silicon target is 3~5 rotating cathode silicon targets；
In step (3), the purity of the nitrogen is 99.99%；The volume flow of the nitrogen is 450~850sccm；
In step (3), the purity of the argon gas is 99.99%；The gas flow of the argon gas is 200~700sccm.
7. a kind of touch screen cover board film as made from claim 1~6 any one of them preparation method.
8. a kind of application of touch screen cover board film as claimed in claim 7 on resin substrate touch screen, the touch screen lid
The silicon oxide film of plate film is connected with the resin substrate.
9. application as claimed in claim 8, which is characterized in that the resin substrate is polymethyl methacrylate base plate.
10. a kind of touch screen cover board, which is characterized in that it includes a resin substrate and a touch screen as claimed in claim 7
The silicon oxide film of cover board film, the touch screen cover board film is connected with the resin substrate.
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| CN103092409A (en) * | 2012-10-02 | 2013-05-08 | 友达光电股份有限公司 | Touch panel |
| CN103699286A (en) * | 2013-12-31 | 2014-04-02 | 深圳力合光电传感股份有限公司 | Blanking manufacturing method of capacitance touch screen |
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| CN103092409A (en) * | 2012-10-02 | 2013-05-08 | 友达光电股份有限公司 | Touch panel |
| CN103699286A (en) * | 2013-12-31 | 2014-04-02 | 深圳力合光电传感股份有限公司 | Blanking manufacturing method of capacitance touch screen |
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