CN106033961B - Analog switch circuit - Google Patents
Analog switch circuit Download PDFInfo
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- CN106033961B CN106033961B CN201510108568.XA CN201510108568A CN106033961B CN 106033961 B CN106033961 B CN 106033961B CN 201510108568 A CN201510108568 A CN 201510108568A CN 106033961 B CN106033961 B CN 106033961B
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Abstract
The invention discloses a kind of analog switch circuits suitable for high-frequency signals.Analog switch circuit includes metal-oxide-semifield-effect electric crystal and control switch.Metal-oxide-semifield-effect electric crystal includes drain electrodes, source electrode, gate electrode and body pole electrode.Gate bias is applied to gate electrode to control metal-oxide-semifield-effect electric crystal on and off.Control switch includes control terminal, first end, second end and third end.First end is connected to body pole electrode.Control bias relevant to gate bias is applied to control terminal, so that when metal-oxide-semifield-effect electric crystal conducting, first end is connected to second end, and makes when metal-oxide-semifield-effect electric crystal is closed, first end is connected to third end.Second end, which is connected to, provides the first voltage source of the first bias, and third end, which is connected to, provides the second voltage source of second bias different from the first bias.
Description
Technical field
The present invention is to disclose a kind of analog switch circuit, especially with regard to it is a kind of can be special according to switch state optimization circuits
The analog switch circuit of property.
Background technique
Due to being easy miniaturization, can be integrated in processing procedure and there is good element characteristic, when being set in communication system
When setting analog switch, through frequently with metal-oxide-semifield-effect electric crystal (metal-oxidation-semiconduc tor field-
Effect transistor, MOSFET) Lai Shixian, and the on and off switched can be come by the bias being applied on gate
Control.In switch conduction, carrier channel (N-type or p-type) will form between the drain and source electrode in metal-oxide-semifield-effect electric crystal, this
When drain and source electrode between can be equivalent to a resistance.When switching closing, do not have between the drain and source electrode in metal-oxide-semifield-effect electric crystal
With the presence of or only very narrow carrier channel, a capacitor can be equivalent between drain electrodes and source electrode at this time.
Other than above-mentioned gate, drain and source electrode, OH electricity it is brilliant usually can also occlusion body pole, to further
The characteristic of control element.In current design, it usually can only provide donor extremely a kind of bias, or be connected and fixed body pole
Resistance.However, by preceding segment description it is found that in the case where metal-oxide-semifield-effect electric crystal is as analog switch, switch conduction and close
It closes what is desired is that two kinds of completely different element characteristics.Therefore, it is only provided in the body pole of metal-oxide-semifield-effect electric crystal fixed inclined
It presses or is connected and fixed resistance and be difficult to further optimize the analog switch in communication system to obtain preferable signal transmitting quality.
Summary of the invention
The problem of in view of above-mentioned prior art, the object of the invention is to provide a kind of analog switch circuit, with solution
The problem of switching characteristic can not certainly be optimized.
A purpose according to the present invention proposes a kind of analog switch circuit suitable for high-frequency signals.Analog switch circuit
Include metal-oxide-semifield-effect electric crystal and control switch.Metal-oxide-semifield-effect electric crystal includes drain electrodes, source electrode, gate electrode
And body pole electrode.Gate bias is applied to gate electrode to control metal-oxide-semifield-effect electric crystal on and off.Control switch packet
Containing control terminal, first end, second end and third end.First end is connected to body pole electrode.Control bias relevant to gate bias
It is applied to control terminal, so that first end is connected to second end when metal-oxide-semifield-effect electric crystal conducting, and is made when golden oxygen half
When field effect electric crystal is closed, first end is connected to third end.Second end, which is connected to, provides the first voltage source of the first bias, third
End, which is connected to, provides the second voltage source of second bias different from the first bias.
Preferably, wherein metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal, and the first bias is higher than second
Bias.
Preferably, wherein metal-oxide-semifield-effect electric crystal can be p-type metal-oxide-semifield-effect electric crystal, and the first bias is lower than second
Bias.
Preferably, wherein the permeable first resistor device with first resistor value of first voltage source is connected to second end, the
Two voltage sources, which can pass through, is connected to third end with the second resistor for being worth low second resistance value than first resistor.
Preferably, wherein analog switch circuit can further include signal offer circuit.Signal provides circuit connection in gold
The drain electrodes or source electrode of oxygen half-court effect electric crystal simultaneously provide the high-frequency signals that frequency is higher than 4GHz.
Another object according to the present invention proposes a kind of analog switch circuit suitable for high-frequency signals.Analog switch electricity
Road includes metal-oxide-semifield-effect electric crystal and control switch.Metal-oxide-semifield-effect electric crystal includes drain electrodes, source electrode, gate electricity
Pole and body pole electrode.Gate bias is applied to gate electrode to control metal-oxide-semifield-effect electric crystal on and off.Control switch
Include control terminal, first end, second end and third end.First end is connected to body pole electrode.Control relevant to gate bias is inclined
Pressure is applied to control terminal, so that first end is connected to second end when metal-oxide-semifield-effect electric crystal conducting, and makes when golden oxygen
When half-court effect electric crystal is closed, first end is connected to third end.Second end is connected to the first resistor device with first resistor value,
Third end is connected to the second resistor for being worth low second resistance value than first resistor.
Preferably, wherein second end can pass through the first voltage source that first resistor device is connected to the first bias of offer, third
End is connected to through second resistor and provides the second voltage source of second bias different from the first bias.
Preferably, wherein metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal, and the first bias is higher than second
Bias.
Preferably, wherein metal-oxide-semifield-effect electric crystal can be p-type metal-oxide-semifield-effect electric crystal, and the first bias is lower than second
Bias.
Preferably, wherein analog switch circuit can further include signal offer circuit.Signal provides circuit connection in gold
The drain electrodes or source electrode of oxygen half-court effect electric crystal simultaneously provide the high-frequency signals that frequency is higher than 4GHz.
From the above, according to the analogy switching circuit of the present invention, can have the advantages that one or more are following:
(1) this analogy switching circuit can be provided in the bias of the body pole of metal-oxide-semifield-effect electric crystal by switching, whereby may be used
Change its element characteristic in metal-oxide-semifield-effect electric crystal on and off.
(2) this analogy switching circuit can be connected to the resistance of the body pole of metal-oxide-semifield-effect electric crystal by switching, whereby may be used
Change the impedance on its drain (source electrode)-body pole path in metal-oxide-semifield-effect electric crystal on and off.
(3) this analogy switching circuit can be provided in bias and the connection of the body pole of metal-oxide-semifield-effect electric crystal by switching
Resistance in the body pole of metal-oxide-semifield-effect electric crystal can optimize element when metal-oxide-semifield-effect electric crystal on and off whereby
Characteristic.
Detailed description of the invention
Fig. 1 is for the schematic diagram of the first embodiment of analog switch circuit of the invention.
Fig. 2 is for the schematic diagram of the second embodiment of analog switch circuit of the invention.
Fig. 3 is for the schematic diagram of the 3rd embodiment of analog switch circuit of the invention.
Fig. 4 is for the schematic diagram of the fourth embodiment of analog switch circuit of the invention.
Symbol description
10: metal-oxide-semifield-effect electric crystal
20: control switch
30: signal provides circuit
B: body pole electrode
D: drain electrodes
G: gate electrode
S: source electrode
N1: first end
N2: second end
N3: third end
Nct: control terminal
R1: first resistor device
R2: second resistor
V1: the first bias
V2: the second bias
Vct: control bias
Vg: gate bias
Vs1: first voltage source
Vs2: the second voltage source
Specific embodiment
The effect of understanding technical characteristic of the invention, content and advantage for your sharp auditor and its can reach, hereby incite somebody to action this
Invention cooperation attached drawing, and detailed description are as follows with the expression-form of embodiment, and wherein used schema, purport are only to show
Meaning and aid in illustrating book and be used, actual proportions and precisely configuration after may not implementing for the present invention, therefore not should appended schema
Ratio and configuration relation limit the invention to the scope of the patents in actual implementation, conjunction is first chatted bright.
Hereinafter with reference to correlative type, illustrate the embodiment of analog switch circuit under this invention, to make to be easy to understand, under
Similar elements system in embodiment is stated to illustrate with identical symbology.
Referring to Fig. 1, it is for the schematic diagram of the first embodiment of analog switch circuit of the invention.In figure, analogy is opened
Powered-down road includes metal-oxide-semifield-effect electric crystal 10 and control switch 20.Metal-oxide-semifield-effect electric crystal 10 includes drain electrodes D, source electrode
Electrode S, gate electrode G and body pole electrode B.Gate bias Vg is applied to gate electrode G to control metal-oxide-semifield-effect electric crystal 10
On and off.Control switch 20 includes control terminal Nct, first end N1, second end N2 and third end N3.First end N1 is connected to
Body pole electrode B.Control bias Vct relevant to gate bias Vg is applied to control terminal Nct, so that working as metal-oxide-semifield-effect electric crystal
When 10 conducting, first end N1 is connected to second end N2, and makes when metal-oxide-semifield-effect electric crystal 10 is closed, and first end N1 connects
It is connected to third end N3.Second end N2 be connected to provide the first bias V1 first voltage source Vs1, third end N3 be connected to offer with
The second voltage source Vs2 of the second first bias V1 different bias V2.
Active layers between the conducting of above-mentioned metal-oxide-semifield-effect electric crystal 10 referred to drain electrodes D and source electrode S have
The presence in carrier (electrons or holes, depending on the type of metal-oxide-semifield-effect electric crystal) channel, and metal-oxide-semifield-effect electric crystal 10
Closing referred to drain electrodes D and source electrode S between active layers have no or only the presence in very narrow carrier channel, close
It first chats bright.
Specifically, high-frequency signals can be inputted by drain electrodes D, and be exported by source electrode S, or with opposite path
Input and output.That is, one of drain electrodes D and source electrode S are signal input for the high-frequency signals to be transmitted
End, and another is then signal output end.In the ideal case, when signal allows to transmit, signal transmission path, that is, draw
Path between pole electrode D and source electrode S is Low ESR to reduce loss.Relatively, when signal forbids transmission, signal is passed
Defeated path wishes to the isolation for for high impedance and increasing signal.On the other hand, when signal allows to transmit, signal transmission path
Wish to for Low ESR with reduce switch in circuit caused by be inserted into impedance.
Then, in this embodiment, metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal, and the first bias
V1 is higher than the second bias V2.Due to for controlling control switch 20 control bias Vct and the gate that is applied to gate electrode G it is inclined
Press Vg related and the on and off of gate bias Vg control metal-oxide-semifield-effect electric crystal 10, therefore control switch 20 can be according to golden oxygen
The on and off of half-court effect electric crystal 10, and determine the connection status of the body pole electrode B of metal-oxide-semifield-effect electric crystal 10.In
It is that, when metal-oxide-semifield-effect electric crystal 10 is connected, body pole electrode B can be connected to first voltage source Vs1 and have higher bias,
When metal-oxide-semifield-effect electric crystal 10 is closed, body pole electrode B can be connected to the second voltage source Vs2 and have lower bias.Such one
, when metal-oxide-semifield-effect electric crystal 10 is connected, metal-oxide-semifield-effect electric crystal 10 is understood because of body polar effect (body effect), and
With lower critical voltage (threshold voltage, Vth).It for example, is small signal in the high-frequency signals of input
When, the impedance on path between drain electrodes D and source electrode S can be related with the inverse ratio of (Vgs-Vth), and Vgs is gate electrode G
With the bias difference of source electrode S.At this point, on path between signal transmission path, that is, drain electrodes D and source electrode S
Impedance can be reduced with critical voltage Vth is write and is lower.Relatively, when metal-oxide-semifield-effect electric crystal 10 is closed, OH
The meeting of transistor 10 critical voltage Vth with higher, and get higher the impedance on the path between drain electrodes D and source electrode S.
Therefore, in this embodiment, since the bias in the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can be electric with OH is write
10 on and off situation of crystal and change, so the signal transmission path of the analog switch circuit of embodiment can conducting when have
There is lower impedance, when closed impedance with higher, and meets the demand of ideal analog switch.It is noted that this hair
Bright embodiment also includes the case where the first bias V1 or the second bias V2 is 0V.That is, first voltage source Vs1 or second
Voltage source Vs2 may actually be ground terminal.In preferred embodiment of the invention, when metal-oxide-semifield-effect electric crystal 10 is N-type
When metal-oxide-semifield-effect electric crystal, the first bias V1 can be positive bias (being greater than 0V), and the second bias V2 can be back bias voltage (being less than 0V).
It is noted that the first bias V1 can not be excessive and drain electrodes D or source electrode S is connected with body pole electrode B.Another party
Face, the sky when metal-oxide-semifield-effect electric crystal 10 is connected and the first bias V1 is positive bias, between signal input end and body pole electrode B
Weary area can become larger, so that the junction capacitance between signal input end and body pole electrode B becomes smaller, and promote cutoff frequency and reduce
Lotus root is bonded to the signal of body pole electrode B, therefore can also reduce the case where signal is missed to body pole electrode B.
Similarly, metal-oxide-semifield-effect electric crystal 10 can also be p-type metal-oxide-semifield-effect electric crystal, and the first bias V1 is lower than second
Bias V2.Substantially such situation is similar to the implementation that above-mentioned metal-oxide-semifield-effect electric crystal 10 is N-type metal-oxide-semifield-effect electric crystal
Example, the polarity for the working bias voltage being applied only on each electrode of metal-oxide-semifield-effect electric crystal 10 need to reverse.Because the first bias V1 is low
In the second bias V2, when metal-oxide-semifield-effect electric crystal 10 is connected, signal transmission path can still have lower impedance, and in gold
When oxygen half-court effect electric crystal 10 is closed, signal transmission path still can impedance with higher.In preferred embodiment of the invention
In, when metal-oxide-semifield-effect electric crystal is p-type metal-oxide-semifield-effect electric crystal, the first bias V1 can be back bias voltage (being less than 0V), the
Two bias V2 can be positive bias (being greater than 0V).
Referring to Fig. 2, it is for the schematic diagram of the second embodiment of analog switch circuit of the invention.In figure, analogy is opened
Powered-down road includes metal-oxide-semifield-effect electric crystal 10 and control switch 20.Metal-oxide-semifield-effect electric crystal 10 includes drain electrodes D, source electrode
Electrode S, gate electrode G and body pole electrode B.Gate bias Vg is applied to gate electrode G to control metal-oxide-semifield-effect electric crystal 10
On and off.Control switch 20 includes control terminal Nct, first end N1, second end N2 and third end N3.First end N1 is connected to
Body pole electrode B.Control bias Vct relevant to gate bias Vg is applied to control terminal Nct, so that working as metal-oxide-semifield-effect electric crystal
When 10 conducting, first end N1 is connected to second end N2, and makes when metal-oxide-semifield-effect electric crystal 10 is closed, and first end N1 connects
It is connected to third end N3.Second end N2 is connected to the first resistor device R1 with first resistor value, third end N3 be connected to have than
First resistor is worth the second resistor R2 of low second resistance value.
Specifically, when metal-oxide-semifield-effect electric crystal 10 is connected, it is desirable to signal input end (drain electrodes D or source electrode electricity
Pole S) to the path of body pole electrode B have impedance high as far as possible, to avoid signal by body pole electrode B leak.Relatively, in golden oxygen
When half-court effect electric crystal 10 is closed, it is desirable to which the path of signal input end (drain electrodes D or source electrode S) to body pole electrode B has
There is low impedance, in the case, the path due to signal transmission path relative to signal input end to body pole electrode B can have
Higher impedance, high-frequency signals will be easier to transmit and be absorbed toward body pole electrode B direction.In other words, it is let out by signal input end
Leaking to the high-frequency signals of signal output end will reduce, and isolation when whole analog switch circuit is closed will be promoted.
In this embodiment, in order to reach said effect, the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can be by control
Switch 20 is connected to the resistor (first resistor device R1) with high resistance when metal-oxide-semifield-effect electric crystal 10 is connected,
Metal-oxide-semifield-effect electric crystal 10 is connected to the resistor (second resistor R2) with low-resistance value when closing.Control control switch
20 mode is generally identical with the first embodiment, and is repeated no more in this.It is noted that the embodiment of the present invention includes second
The second resistance of resistor R2 is worth minimum situation.For example, second resistor R2 can be connected to ground terminal conducting wire and
Actually resistance value levels off to zero.In this way, when metal-oxide-semifield-effect electric crystal 10 is connected, signal input end (drain electrodes D
Or source electrode S) there will be a high impedance to the path of body pole electrode B, and when metal-oxide-semifield-effect electric crystal 10 is closed, news
The path of number input terminal to body pole electrode B can have low impedance again, and achieve the effect that ideal analog switch.
Referring to Fig. 3, it is for the schematic diagram of the 3rd embodiment of analog switch circuit of the invention.In this embodiment
In, analog switch circuit can have both the feature of analog switch circuit in first embodiment and second embodiment.In figure, when golden oxygen half
When effect electric crystal 10 is connected, the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can pass through first resistor value with higher it
First resistor device R1, which is linked to, provides the first voltage source Vs1 of the first bias V1.Opposite, when metal-oxide-semifield-effect electric crystal 10 closes
When closing, the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can pass through the second resistor R2 with lower second resistance value and connect
It ties in the second voltage source Vs2 of the second bias V2 of offer.In this embodiment, metal-oxide-semifield-effect electric crystal 10 can be N-type gold oxygen
Half-court effect electric crystal, and the first bias V1 is higher than the second bias V2.Preferably, the first bias V1 can be positive bias, the second bias
V2 can be back bias voltage.
Then, when metal-oxide-semifield-effect electric crystal 10 is connected, the signal transmission path of signal input end to signal output end
To there is low impedance because of body polar effect, and the path of signal input end to body pole electrode will be because being connected to high resistance
First resistor device R1 and have high impedance.When metal-oxide-semifield-effect electric crystal 10 is closed, signal input end to signal output end
Signal transmission path will there is high impedance because of body polar effect, and signal input end to the path of body pole electrode B will because even
It is connected to the second resistor R2 with low-resistance value and there is Low ESR.In this way, when metal-oxide-semifield-effect electric crystal 10 is connected
When, high-frequency signals will prioritised transmission in low-impedance signal transmission path, and reduce signal lotus root and be bonded to body pole electrode B
Loss.Relatively, when metal-oxide-semifield-effect electric crystal 10 is closed, high-frequency signals will preferentially select have low-impedance signal defeated
Enter end-body pole electrode B path, and improves the isolation at signal transmission path both ends.
Referring to Fig. 4, it is for the schematic diagram of the fourth embodiment of analog switch circuit of the invention.In figure, analogy is opened
Powered-down road can further include signal and provide circuit 30.Signal provides the drain that circuit 30 is connected to metal-oxide-semifield-effect electric crystal 10
Electrode D simultaneously provides the high-frequency signals that frequency is higher than 4GHz.In this embodiment, the drain electrodes D of metal-oxide-semifield-effect electric crystal 10
As signal input end.In another embodiment, signal provides the source that circuit 30 is also connected to metal-oxide-semifield-effect electric crystal 10
Pole electrode S and using source electrode S as signal input end.
In the case where input signal is low-frequency signal, due to the parasitism formed between each electrode of metal-oxide-semifield-effect electric crystal 10
Capacitor is still high impedance for input signal, therefore the effect of signal isolation quite well makes analog switch of the invention
The effect of circuit, is not obvious.However, when input signal is high-frequency signals, especially when frequency is more than 4GHz, input signal
It is easy for being connected to ground or other electrodes via parasitic capacitance lotus root.Then, when the OH of the analogy switching circuit of the present invention
When the signal input end (drain electrodes D or source electrode S) of transistor 10 is connected to signal offer circuit 30, it can be directed to and come from
The frequency of signal offer circuit 30 is more than that the high-frequency signals of 4GHz are effectively improved signal transmission path and signal input end to body pole
The characteristic in the path of electrode, so that the impedance on each path is best with the on and off for writing metal-oxide-semifield-effect electric crystal 10
Change.More preferably, signal provides the high-frequency signals that the available frequency of circuit 30 is more than 5GHz, analog switch electricity of the invention at this time
The effect of road, will become apparent from.
The foregoing is merely illustratives, rather than are restricted person.Any spirit and scope without departing from the present invention, and to it
The equivalent modifications or change of progress, are intended to be limited solely by appended claims.
Claims (10)
1. a kind of analog switch circuit is suitable for a high-frequency signals, it includes:
One metal-oxide-semifield-effect electric crystal, comprising a drain electrodes, a source electrode, a gate electrode and integrated pole electrode, wherein
One gate bias is applied to the gate electrode to control the metal-oxide-semifield-effect electric crystal on and off；
One control switch, includes a control terminal, a first end, a second end and a third end, which is connected to the body pole
Electrode, wherein control bias relevant to the gate bias is applied to the control terminal, so that working as the metal-oxide-semifield-effect electric crystal
When conducting, which is connected to the second end, and makes the first end connection when the metal-oxide-semifield-effect electric crystal is closed
In the third end；And
One signal provides circuit, is connected to the drain electrodes of the metal-oxide-semifield-effect electric crystal or the source electrode and provides one high
Frequency signal；
Wherein, which, which is connected to, provides a first voltage source of one first bias, so that working as the metal-oxide-semifield-effect electric crystal
The body pole electrode is connected to the first voltage source when conducting, which, which is connected to, provides one second different from first bias
The second voltage source of one of bias, so that the body pole electrode is connected to the second voltage when the metal-oxide-semifield-effect electric crystal is closed
Source.
2. analog switch circuit according to claim 1, wherein the metal-oxide-semifield-effect electric crystal is a N-type OH
Transistor, and first bias is higher than second bias.
3. analog switch circuit according to claim 1, wherein the metal-oxide-semifield-effect electric crystal is a p-type OH
Transistor, and first bias is lower than second bias.
4. analog switch circuit according to any one of claims 1 to 3, wherein the first voltage source, which penetrates, has one first
One first resistor device of resistance value is connected to the second end, which, which penetrates to have, is worth low 1 the than the first resistor
One of two resistance values second resistor is connected to the third end.
5. analog switch circuit according to claim 4, wherein the signal provides circuit and provides frequency is higher than 4GHz one
High-frequency signals.
6. a kind of analog switch circuit is suitable for a high-frequency signals, it includes:
One metal-oxide-semifield-effect electric crystal, comprising a drain electrodes, a source electrode, a gate electrode and integrated pole electrode, wherein
One gate bias is applied to the gate electrode to control the drain electrodes of the metal-oxide-semifield-effect electric crystal with the source electrode and lead
Logical or closing；And
One control switch, includes a control terminal, a first end, a second end and a third end, which is connected to the body pole
Electrode, wherein control bias relevant to the gate bias is applied to the control terminal, so that working as the metal-oxide-semifield-effect electric crystal
When conducting, which is connected to the second end, and makes the first end connection when the metal-oxide-semifield-effect electric crystal is closed
In the third end,
Wherein, which is connected to the first resistor device with a first resistor value, which, which is connected to, has than this
First resistor is worth one of low second resistance value second resistor.
7. analog switch circuit according to claim 6, wherein the second end is connected to offer through the first resistor device
One first voltage source of one first bias, the third end through the second resistor be connected to provide it is different from first bias
One of one second bias the second voltage source.
8. analog switch circuit according to claim 7, wherein the metal-oxide-semifield-effect electric crystal is a N-type OH
Transistor, and first bias is higher than second bias.
9. analog switch circuit according to claim 7, wherein the metal-oxide-semifield-effect electric crystal is a p-type OH
Transistor, and first bias is lower than second bias.
10. analog switch circuit according to any one of claims 7 to 9, further includes:
One signal provides circuit, is connected to the drain electrodes of the metal-oxide-semifield-effect electric crystal or the source electrode and provides frequency
A high-frequency signals higher than 4GHz.
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| CN106033961A (en) | 2016-10-19 |
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