CN106033961A - Analog switch circuit - Google Patents
Analog switch circuit Download PDFInfo
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- CN106033961A CN106033961A CN201510108568.XA CN201510108568A CN106033961A CN 106033961 A CN106033961 A CN 106033961A CN 201510108568 A CN201510108568 A CN 201510108568A CN 106033961 A CN106033961 A CN 106033961A
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Abstract
Disclosed in the invention is an analog switch circuit for a high-frequency signal. The analog switch circuit comprises a metal-oxide-semiconductor field-effect transistor and a control switch. The metal-oxide-semiconductor field-effect transistor consists of a drain electrode, a source electrode, a gate electrode and a polar electrode. A gate bias voltage is applied to the gate electrode to control conduction or disconnection of the metal-oxide-semiconductor field-effect transistor. The control switch consists of a control terminal, a first terminal, a second terminal and a three terminal; and the first terminal is connected to the polar electrode. A control bias voltage related to the gate bias voltage is applied to the control terminal, so that the first terminal is connected to the second terminal when the metal-oxide-semiconductor field-effect transistor is in a conduction state and the first terminal is connected to the third terminal when the metal-oxide-semiconductor field-effect transistor is turned off. The second terminal is connected to a first voltage source providing a first bias voltage; and the third terminal is connected to a second voltage source providing a second bias voltage different from the first bias voltage.
Description
Technical field
The present invention is to disclose a kind of analog switch circuit, can be according on off state optimization especially with regard to one
The analog switch circuit of circuit characteristic.
Background technology
Due to easy miniaturization, can be integrated in processing procedure and there is good element characteristic, when will be in communication system
When system arranges analog switch, through frequently with metal-oxide-semifield-effect electric crystal (metal-oxidation-semiconduc
Tor field-effect transistor, MOSFET) realize, and the on and off switched can be by applying
Bias on gate controls.When switch conduction, between drain in metal-oxide-semifield-effect electric crystal and source electrode
Carrier passage (N-type or p-type) can be formed, a resistance now between drain and source electrode, can be equivalent to.Close at switch
Time, have no or only the narrowest carrier passage between drain in metal-oxide-semifield-effect electric crystal and source electrode and exist, this
Time drain electrodes and source electrode between can be equivalent to an electric capacity.
In addition to above-mentioned gate, drain and source electrode, MOSFET electricity brilliant the most also can occlusion body pole, use
To control the characteristic of element further.In current design, the most only can provide donor extremely a kind of bias,
Or make body pole connect fixing resistance.But, leading portion describe, make at metal-oxide-semifield-effect electric crystal
In the case of analog switch, switch conduction and closedown what is desired is that two kinds of distinct element characteristics.
Therefore, fixed-bias transistor circuit or connection fixed resistance is only provided to be difficult to further in the body pole of metal-oxide-semifield-effect electric crystal
Analog switch in optimization communication system is to obtain preferably signal transmission quality.
Summary of the invention
Because the problem of above-mentioned prior art, the purpose of the present invention is exactly to provide a kind of analog switch electricity
Road, so that solve cannot the problem of optimization switching characteristic.
A purpose according to the present invention, proposes a kind of analog switch circuit being applicable to high-frequency signals.Analogy is opened
Close circuit comprise metal-oxide-semifield-effect electric crystal and control switch.Metal-oxide-semifield-effect electric crystal comprise drain electrodes,
Source electrode, gate electrode and body pole electrode.Gate bias puts on gate electrode to control MOSFET
Electric crystal on and off.Control switch and comprise control end, the first end, the second end and the 3rd end.First end
It is connected to body pole electrode.The control bias relevant to gate bias puts on control end so that work as MOS field
During effect electric crystal conducting, the first end is connected to the second end, and makes when metal-oxide-semifield-effect electric crystal is closed,
First end is connected to the 3rd end.Second end is connected to provide the first voltage source of the first bias, three-terminal link
In providing and the first the second voltage source biasing the second different biass.
It is preferred that wherein metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal, and the first bias
Higher than the second bias.
It is preferred that wherein metal-oxide-semifield-effect electric crystal can be p-type metal-oxide-semifield-effect electric crystal, and the first bias
Less than the second bias.
It is preferred that wherein the first voltage source can pass through and has the first resistor of the first resistance value and be connected to second
End, the second voltage source can pass through to be had the second resistor of second resistance value lower than the first resistance value and is connected to
3rd end.
It is preferred that wherein analog switch circuit can further include signal offer circuit.Signal provides circuit even
It is connected to the drain electrodes of metal-oxide-semifield-effect electric crystal or source electrode the high frequency news providing frequency to be higher than 4GHz
Number.
According to another object of the present invention, a kind of analog switch circuit being applicable to high-frequency signals is proposed.Analogy
On-off circuit comprises metal-oxide-semifield-effect electric crystal and controls switch.Metal-oxide-semifield-effect electric crystal comprises drain electricity
Pole, source electrode, gate electrode and body pole electrode.Gate bias puts on gate electrode to control gold oxygen half
Field effect electric crystal on and off.Control switch and comprise control end, the first end, the second end and the 3rd end.The
One end is connected to body pole electrode.The control bias relevant to gate bias puts on control end so that when gold oxygen
During the conducting of half field effect electric crystal, the first end is connected to the second end, and makes when metal-oxide-semifield-effect electric crystal closes
When closing, the first end is connected to the 3rd end.Second end is connected to first resistor with the first resistance value, the
Three-terminal link is in second resistor with second resistance value lower than the first resistance value.
It is preferred that wherein the second end can pass through the first resistor and is connected to provide the first voltage of the first bias
Source, the 3rd end is connected to provide and the first the second voltage biasing the second different biass through the second resistor
Source.
It is preferred that wherein metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal, and the first bias
Higher than the second bias.
It is preferred that wherein metal-oxide-semifield-effect electric crystal can be p-type metal-oxide-semifield-effect electric crystal, and the first bias
Less than the second bias.
It is preferred that wherein analog switch circuit can further include signal offer circuit.Signal provides circuit even
It is connected to the drain electrodes of metal-oxide-semifield-effect electric crystal or source electrode the high frequency news providing frequency to be higher than 4GHz
Number.
From the above, according to the analogy on-off circuit of the present invention, it can have one or more following advantage:
(1) this analogy on-off circuit can be provided in the bias of body pole of metal-oxide-semifield-effect electric crystal by switching,
Thereby can change its element characteristic when metal-oxide-semifield-effect electric crystal on and off.
(2) this analogy on-off circuit can be connected to the resistance of body pole of metal-oxide-semifield-effect electric crystal by switching,
The resistance on its drain (source electrode)-path, body pole thereby can be changed when metal-oxide-semifield-effect electric crystal on and off
Anti-.
(3) this analogy on-off circuit can be by the bias switching the body pole that be provided in metal-oxide-semifield-effect electric crystal
And it is connected to the resistance of the body pole of metal-oxide-semifield-effect electric crystal, thereby can optimization metal-oxide-semifield-effect electric crystal
Element characteristic during on and off.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the first embodiment of the analog switch circuit for the present invention.
Fig. 2 is the schematic diagram of the second embodiment of the analog switch circuit for the present invention.
Fig. 3 is the schematic diagram of the 3rd embodiment of the analog switch circuit for the present invention.
Fig. 4 is the schematic diagram of the 4th embodiment of the analog switch circuit for the present invention.
Symbol description
10: metal-oxide-semifield-effect electric crystal
20: control switch
30: signal provides circuit
B: body pole electrode
D: drain electrodes
G: gate electrode
S: source electrode
N1: the first end
N2: the second end
N3: the three end
Nct: control end
R1: the first resistor
R2: the second resistor
V1: the first bias
V2: the second bias
Vct: control bias
Vg: gate bias
Vs1: the first voltage source
Vs2: the second voltage source
Detailed description of the invention
The technical characteristic of the present invention, content and advantage and the effect that can reach thereof is understood for your auditor sharp,
Hereby the present invention is coordinated accompanying drawing, and describes in detail as follows with the expression-form of embodiment, and used in it
Graphic, its purport be only signal and aid in illustrating book be used, may not for the present invention implement after actual proportions and
Precisely configuration, therefore should not limit the invention in actual enforcement with regard to appended graphic ratio and configuration relation
The scope of the claims, conjunction is first chatted bright.
Hereinafter with reference to correlative type, the embodiment of analog switch circuit under this invention is described, for making to be easy to
Understanding, the similar elements system in following embodiment illustrates with identical symbology.
Referring to Fig. 1, it is the schematic diagram of first embodiment of the analog switch circuit for the present invention.
In figure, analog switch circuit comprises metal-oxide-semifield-effect electric crystal 10 and controls switch 20.MOS field
Effect electric crystal 10 comprises drain electrodes D, source electrode S, gate electrode G and body pole electrode B.Lock
Pole bias Vg puts on gate electrode G to control metal-oxide-semifield-effect electric crystal 10 on and off.Control
System switch 20 comprises control end Nct, the first end N1, the second end N2 and the 3rd end N3.First end
N1 is connected to body pole electrode B.The control bias Vct relevant to gate bias Vg puts on control end
Nct so that when metal-oxide-semifield-effect electric crystal 10 turns on, the first end N1 is connected to the second end N2,
And making when metal-oxide-semifield-effect electric crystal 10 is closed, the first end N1 is connected to the 3rd end N3.The
Two end N2 are connected to provide the first voltage source Vs1 of the first bias V1, and the 3rd end N3 is connected to carry
The second voltage source Vs2 for the second bias V2 different for bias V1 from first.
Conducting the referred to drain electrodes D and source electrode S of above-mentioned metal-oxide-semifield-effect electric crystal 10
Between active layers have depositing of carrier (electrons or holes, depending on the kind of metal-oxide-semifield-effect electric crystal) passage
, and between closedown the referred to drain electrodes D of metal-oxide-semifield-effect electric crystal 10 and source electrode S
Active layers have no or only the existence of the narrowest carrier passage, close first chat bright.
Specifically, high-frequency signals can be inputted by drain electrodes D, and is exported by source electrode S, or
It is with contrary path input and output.It is to say, for high-frequency signals to be transmitted, drain
One of electrode D and source electrode S is signal input end, and another is then signal output end.Resonable
Think in situation, when signal allows transmission, signal transmission path, namely drain electrodes D and source electrode
Path between electrode S, for Low ESR to reduce loss.Relatively, when signal forbids transmission, news
Number transmission path wish to increase the isolation of signal for high impedance.On the other hand, allow at signal
During transmission, signal transmission path wishes to the insertion resistance caused in circuit for Low ESR to reduce switch
Anti-.
Then, in this embodiment, metal-oxide-semifield-effect electric crystal can be N-type metal-oxide-semifield-effect electric crystal,
And first bias V1 higher than second bias V2.Due to the control bias for controlling switch 20
Vct is relevant to the gate bias Vg putting on gate electrode G and gate bias Vg controls MOS field
The on and off of effect electric crystal 10, therefore control switch 20 can be according to metal-oxide-semifield-effect electric crystal 10
On and off, and determine the connection status of the body pole electrode B of metal-oxide-semifield-effect electric crystal 10.Then,
When metal-oxide-semifield-effect electric crystal 10 turns on, body pole electrode B can be connected to the first voltage source Vs1 and
Having higher bias, when metal-oxide-semifield-effect electric crystal 10 is closed, body pole electrode B can be connected to second
Voltage source Vs2 and have relatively low bias.Consequently, it is possible to when metal-oxide-semifield-effect electric crystal 10 turns on,
Metal-oxide-semifield-effect electric crystal 10 because of body polar effect (body effect), and can have relatively low critical voltage
(threshold voltage,Vth).For example, when the high-frequency signals of input is little signal, drain electricity
Impedance on path between pole D to source electrode S can be relevant with the inverse ratio of (Vgs-Vth), and Vgs is lock
The bias difference of pole electrode G and source electrode S.Now, signal transmission path, namely drain electrodes
Impedance on path between D and source electrode S can reduce and step-down with writing critical voltage Vth.Relatively
Ground, when metal-oxide-semifield-effect electric crystal 10 is closed, metal-oxide-semifield-effect electric crystal 10 can have higher
Critical voltage Vth, and make the impedance on the path between drain electrodes D and source electrode S uprise.Cause
This, in this embodiment, owing to the bias in the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can be with
Write metal-oxide-semifield-effect electric crystal 10 on and off situation and change, so the analog switch electricity of embodiment
The signal transmission path on road can have relatively low impedance when conducting, has higher impedance when closed,
And meet the demand of preferable analog switch.It is noted that embodiments of the invention also to comprise first inclined
Pressure V1 or second bias V2 is the situation of 0V.It is to say, the first voltage source Vs1 or second electricity
Potential source Vs2 may actually be earth terminal.In the preferred embodiment of the present invention, work as MOSFET
When electric crystal 10 is N-type metal-oxide-semifield-effect electric crystal, the first bias V1 can be positive bias (more than 0V),
Second bias V2 can be back bias voltage (less than 0V).It is noted that first bias V1 can not excessive and
Make drain electrodes D or source electrode S and the conducting of body pole electrode B.On the other hand, at MOS field
When effect electric crystal 10 turns on and the first bias V1 is positive bias, between signal input end and body pole electrode B
Exhaustion region can become big, and then the junction capacitance between signal input end and body pole electrode B is diminished,
And promote cut-off frequency and reduce Rhizoma Nelumbinis and be bonded to the signal of body pole electrode B, the most also can reduce signal leakage
Situation to body pole electrode B.
In like manner, metal-oxide-semifield-effect electric crystal 10 is alternatively p-type metal-oxide-semifield-effect electric crystal, and first is inclined
Pressure V1 is less than the second bias V2.Substantially this kind situation is similar to above-mentioned metal-oxide-semifield-effect electric crystal 10
For the embodiment of N-type metal-oxide-semifield-effect electric crystal, it is applied only to each electricity of metal-oxide-semifield-effect electric crystal 10
The polarity of the working bias voltage extremely gone up needs reversing.Because the first bias V1 is less than the second bias V2, at gold oxygen
When half field effect electric crystal 10 turns on, signal transmission path still can have relatively low impedance, and at gold oxygen half
When field effect electric crystal 10 is closed, signal transmission path still can have higher impedance.In the present invention relatively
In good embodiment, when metal-oxide-semifield-effect electric crystal is p-type metal-oxide-semifield-effect electric crystal, first is inclined
Pressure V1 can be back bias voltage (less than 0V), and the second bias V2 can be positive bias (more than 0V).
Referring to Fig. 2, it is the schematic diagram of the second embodiment of the analog switch circuit for the present invention.
In figure, analog switch circuit comprises metal-oxide-semifield-effect electric crystal 10 and controls switch 20.MOS field
Effect electric crystal 10 comprises drain electrodes D, source electrode S, gate electrode G and body pole electrode B.Lock
Pole bias Vg puts on gate electrode G to control metal-oxide-semifield-effect electric crystal 10 on and off.Control
System switch 20 comprises control end Nct, the first end N1, the second end N2 and the 3rd end N3.First end
N1 is connected to body pole electrode B.The control bias Vct relevant to gate bias Vg puts on control end
Nct so that when metal-oxide-semifield-effect electric crystal 10 turns on, the first end N1 is connected to the second end N2,
And making when metal-oxide-semifield-effect electric crystal 10 is closed, the first end N1 is connected to the 3rd end N3.The
Two end N2 are connected to the first resistor R1 with the first resistance value, and the 3rd end N3 is connected to be had
Second resistor R2 of second resistance value lower than the first resistance value.
Specifically, when metal-oxide-semifield-effect electric crystal 10 turns on, it is desirable to signal input end (drain electricity
Pole D or source electrode S) to the path of body pole electrode B, there is the highest impedance, with avoid signal by
The electrode B leakage of body pole.Relatively, when metal-oxide-semifield-effect electric crystal 10 is closed, it is desirable to signal inputs
End (drain electrodes D or source electrode S) has low impedance, in these feelings to the path of body pole electrode B
Under condition, owing to signal transmission path can have relatively to the path of body pole electrode B relative to signal input end
High impedance, high-frequency signals will be easier to be absorbed toward the transmission of electrode B direction, body pole.In other words,
Will be reduced by the high-frequency signals of signal input end leakage to signal output end, overall analog switch circuit
Isolation during closedown will promote.
In this embodiment, in order to reach the effect above, the body pole electrode of metal-oxide-semifield-effect electric crystal 10
B can be connected to have high resistance by controlling switch 20 when metal-oxide-semifield-effect electric crystal 10 turns on
Resistor (the first resistor R1), be connected to that when metal-oxide-semifield-effect electric crystal 10 is closed there is low electricity
The resistor (the second resistor R2) of resistance.The mode controlling switch 20 is generally implemented with first
Example is identical, repeats no more in this.It is noted that embodiments of the invention comprise the second resistor R2
The minimum situation of the second resistance value.For example, the second resistor R2 can be to be connected to earth terminal
Wire and actually resistance value levels off to zero.Consequently, it is possible to when metal-oxide-semifield-effect electric crystal 10 turns on,
Signal input end (drain electrodes D or source electrode S) will have high to the path of body pole electrode B
Impedance, and when metal-oxide-semifield-effect electric crystal 10 is closed, the path of signal input end to body pole electrode B
Can have again low impedance, and reach the effect of preferable analog switch.
Referring to Fig. 3, it is the schematic diagram of the 3rd embodiment of the analog switch circuit for the present invention.
In this embodiment, analog switch circuit can have first embodiment and analog switch in the second embodiment concurrently
The feature of circuit.In figure, when metal-oxide-semifield-effect electric crystal 10 turns on, metal-oxide-semifield-effect electric crystal
The body pole electrode B of 10 can pass through to be had the first resistor R1 of the first higher resistance value and is linked to carry
The first voltage source Vs1 for the first bias V1.Relative, when metal-oxide-semifield-effect electric crystal 10 is closed
Time, the body pole electrode B of metal-oxide-semifield-effect electric crystal 10 can pass through has the of the second relatively low resistance value
Two resistor R2 are linked to provide the second voltage source Vs2 of the second bias V2.In this embodiment,
Metal-oxide-semifield-effect electric crystal 10 can be N-type metal-oxide-semifield-effect electric crystal, and the first bias V1 is higher than the
Two bias V2.It is preferred that the first bias V1 can be positive bias, the second bias V2 can be back bias voltage.
Then, when metal-oxide-semifield-effect electric crystal 10 turns on, the news of signal input end to signal output end
Number transmission path will have low impedance because of body polar effect, and signal input end is to the road of body pole electrode
The first resistor R1 because being connected to have high resistance is had high impedance by footpath.Work as MOSFET
When electric crystal 10 is closed, the signal transmission path of signal input end to signal output end will be because of body polar effect
And have high impedance, and signal input end to the path of body pole electrode B will have low electricity because being connected to
Second resistor R2 of resistance and there is Low ESR.Consequently, it is possible to when metal-oxide-semifield-effect electric crystal 10
During conducting, high-frequency signals will prioritised transmission in having low-impedance signal transmission path, and reduce news
Number Rhizoma Nelumbinis is bonded to the loss of body pole electrode B.Relatively, when metal-oxide-semifield-effect electric crystal 10 is closed, high
Frequently signal will have the path of low-impedance signal input end-body pole electrode B by prioritizing selection, and makes news
Number transmission two ends, path isolation improve.
Referring to Fig. 4, it is the schematic diagram of the 4th embodiment of the analog switch circuit for the present invention.
In figure, analog switch circuit can further include signal and provides circuit 30.Signal provides circuit 30 even
The drain electrodes D being connected to metal-oxide-semifield-effect electric crystal 10 high frequency providing frequency to be higher than 4GHz news
Number.In this embodiment, the drain electrodes D of metal-oxide-semifield-effect electric crystal 10 is signal input end.
In another embodiment, signal provides circuit 30 to be also connected to the source of metal-oxide-semifield-effect electric crystal 10
Pole electrode S and with source electrode S as signal input end.
In the case of input signal is low-frequency signal, due between each electrode of metal-oxide-semifield-effect electric crystal 10
The parasitic capacitance formed is still high impedance for input signal, and therefore the effect of signal isolation is the most suitable
Good and make effect of the analog switch circuit of the present invention inconspicuous.But, when input signal is high
Frequently signal, especially when frequency is more than 4GHz, input signal is easy for connecing via parasitic capacitance Rhizoma Nelumbinis
To ground or other electrodes.Then, when the metal-oxide-semifield-effect electric crystal 10 of analogy on-off circuit of the present invention
Signal input end (drain electrodes D or source electrode S) be connected to signal provide circuit 30 time, can
It is effectively improved signal transmission for the high-frequency signals more than 4GHz of the frequency from signal offer circuit 30
Path and signal input end are to the characteristic in the path of body pole electrode, so that the impedance on each path is with work
The on and off of metal-oxide-semifield-effect electric crystal 10 and optimization.More preferably, signal provides circuit 30
The available frequency high-frequency signals more than 5GHz, now effect of the analog switch circuit of the present invention
Will become apparent from.
The foregoing is only illustrative, rather than be restricted person.Any spirit without departing from the present invention with
Category, and the equivalent modifications carrying out it or change, be intended to be limited solely by appended claims.
Claims (10)
1. an analog switch circuit a, it is adaptable to high-frequency signals, it comprises:
One metal-oxide-semifield-effect electric crystal, comprise a drain electrodes, a source electrode, a gate electrode and
Integrally pole electrode, wherein a gate bias puts on this gate electrode to control this MOSFET electricity crystalline substance
Body on and off；And
One controls switch, comprises a control end, one first end, one second end and one the 3rd end, and this is the years old
One end is connected to this body pole electrode, and wherein relevant to this gate bias control bias puts on this control
End processed so that when this metal-oxide-semifield-effect electric crystal turns on, this first end is connected to this second end, with
And make when this metal-oxide-semifield-effect electric crystal is closed, this first end is connected to the 3rd end,
Wherein, this second end is connected to one first voltage source providing one first to bias, and the 3rd end is even
Second voltage source of one of offer one second bias different from this first bias is provided.
Analog switch circuit the most according to claim 1, wherein this metal-oxide-semifield-effect electric crystal is
One N-type metal-oxide-semifield-effect electric crystal, and this first bias is higher than this second bias.
Analog switch circuit the most according to claim 1, wherein this metal-oxide-semifield-effect electric crystal is
One p-type metal-oxide-semifield-effect electric crystal, and this first bias is less than this second bias.
4., according to the analog switch circuit described in claims 1 to 3, wherein this first voltage source passes through
One first resistor with one first resistance value is connected to this second end, and this second voltage source is through tool
One of one second resistance value lower than this first resistance value the second resistor is had to be connected to the 3rd end.
Analog switch circuit the most according to claim 4, it comprises further: a signal provides
Circuit, is connected to this drain electrodes of this metal-oxide-semifield-effect electric crystal or this source electrode and provides frequency
A high-frequency signals higher than 4GHz.
6. an analog switch circuit a, it is adaptable to high-frequency signals, it comprises:
One metal-oxide-semifield-effect electric crystal, comprise a drain electrodes, a source electrode, a gate electrode and
Integrally pole electrode, wherein a gate bias puts on this gate electrode to control this MOSFET electricity crystalline substance
This drain electrodes of body and this source electrode on and off；And
One controls switch, comprises a control end, one first end, one second end and one the 3rd end, and this is the years old
One end is connected to this body pole electrode, and wherein relevant to this gate bias control bias puts on this control
End processed so that when this metal-oxide-semifield-effect electric crystal turns on, this first end is connected to this second end, with
And make when this metal-oxide-semifield-effect electric crystal is closed, this first end is connected to the 3rd end,
Wherein, this second end is connected to one first resistor with one first resistance value, the 3rd end
It is connected to that there is one of one second resistance value lower than this first resistance value the second resistor.
Analog switch circuit the most according to claim 6, wherein this second end is through this first electricity
Resistance device is connected to one first voltage source providing one first to bias, and the 3rd end passes through this second resistor
One of offer one second bias different from this first bias the second voltage source is provided.
Analog switch circuit the most according to claim 7, wherein this metal-oxide-semifield-effect electric crystal is
One N-type metal-oxide-semifield-effect electric crystal, and this first bias is higher than this second bias.
Analog switch circuit the most according to claim 7, wherein this metal-oxide-semifield-effect electric crystal is
One p-type metal-oxide-semifield-effect electric crystal, and this first bias is less than this second bias.
10., according to the analog switch circuit described in claim 7 to 9, it comprises further:
One signal provides circuit, is connected to this drain electrodes or this source electrode of this metal-oxide-semifield-effect electric crystal
Electrode also provides the high-frequency signals that frequency is higher than 4GHz.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167520A (en) * | 2018-11-01 | 2019-01-08 | 康舒电子(东莞)有限公司 | The primary side integrated circuit die group of power supply unit |
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| CN106033961B (en) | 2019-09-03 |
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