CN106033961A - Analog switch circuit - Google Patents
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Abstract
Description
技术领域technical field
本发明是揭露一种类比开关电路，特别是关于一种能根据开关状态最佳化电路特性的类比开关电路。The present invention discloses an analog switch circuit, especially an analog switch circuit which can optimize circuit characteristics according to the switch state.
背景技术Background technique
由于容易小型化、可整合于制程中且具有良好的元件特性，当要在通讯系统中设置类比开关时，经常采用金氧半场效电晶体(metal-oxidation-semiconductor field-effect transistor,MOSFET)来实现，而开关的导通或关闭可藉由施加在闸极上的偏压来控制。在开关导通时，金氧半场效电晶体中的汲极与源极间会形成载子通道(N型或P型)，此时汲极与源极间可等效为一电阻。在开关关闭时，金氧半场效电晶体中的汲极与源极间没有或仅有很窄的载子通道存在，此时汲极电极与源极电极间可等效为一电容。Because it is easy to miniaturize, can be integrated in the manufacturing process, and has good component characteristics, when setting analog switches in communication systems, metal-oxidation-semiconductor field-effect transistors (MOSFETs) are often used To achieve, and the switch on or off can be controlled by the bias applied to the gate. When the switch is turned on, a carrier channel (N-type or P-type) is formed between the drain and the source of the metal oxide semiconductor field effect transistor. At this time, the drain and the source can be equivalent to a resistance. When the switch is turned off, there is no or only a very narrow carrier channel between the drain and the source of the metal oxide semiconductor field effect transistor. At this time, the drain electrode and the source electrode can be equivalent to a capacitance.
除了上述的闸极、汲极与源极外，金氧半场效电晶通常还会包含体极，用以进一步控制元件的特性。在目前的设计中，通常仅会提供给体极一种偏压，或是使体极连接固定的电阻。然而，由前段描述可知，在金氧半场效电晶体作为类比开关的情况下，开关导通与关闭所需要的是两种截然不同的元件特性。因此，仅在金氧半场效电晶体的体极提供固定偏压或连接固定电阻难以近一步最佳化通讯系统中的类比开关以获得较佳的讯号传递品质。In addition to the above-mentioned gate, drain and source, metal oxide semiconductor field effect transistors usually also include a body, which is used to further control the characteristics of the device. In current designs, only one bias voltage is usually provided to the body, or the body is connected to a fixed resistor. However, it can be seen from the previous description that, in the case of a metal oxide semiconductor field effect transistor as an analog switch, two completely different device characteristics are required for the switch to be turned on and off. Therefore, it is difficult to further optimize the analog switch in the communication system to obtain better signal transmission quality by only providing a fixed bias voltage or connecting a fixed resistor to the body of the MOSFET.
发明内容Contents of the invention
有鉴于上述习知技艺的问题，本发明的目的就是在提供一种类比开关电路，以解决无法最佳化开关特性的问题。In view of the above-mentioned problems in the prior art, the purpose of the present invention is to provide an analog switch circuit to solve the problem that the switching characteristics cannot be optimized.
根据本发明的一目的，提出一种适用于高频讯号的类比开关电路。类比开关电路包含金氧半场效电晶体与控制开关。金氧半场效电晶体包含汲极电极、源极电极、闸极电极及体极电极。闸极偏压施加于闸极电极以控制金氧半场效电晶体导通或关闭。控制开关包含控制端、第一端、第二端及第三端。第一端连接于体极电极。与闸极偏压相关的控制偏压施加于控制端，使得当金氧半场效电晶体导通时，第一端连接于第二端，以及使得当金氧半场效电晶体关闭时，第一端连接于第三端。第二端连接于提供第一偏压的第一电压源，第三端连接于提供与第一偏压不同的第二偏压之第二电压源。According to an object of the present invention, an analog switch circuit suitable for high-frequency signals is proposed. The analog switch circuit includes a metal oxide half field effect transistor and a control switch. The metal oxide half field effect transistor includes a drain electrode, a source electrode, a gate electrode and a body electrode. A gate bias voltage is applied to the gate electrode to control the MOSFET to be turned on or off. The control switch includes a control terminal, a first terminal, a second terminal and a third terminal. The first end is connected to the body electrode. A control bias voltage related to the gate bias voltage is applied to the control terminal, so that when the metal oxide half field effect transistor is turned on, the first end is connected to the second end, and when the metal oxide half field effect transistor is turned off, The first end is connected to the third end. The second terminal is connected to a first voltage source providing a first bias voltage, and the third terminal is connected to a second voltage source providing a second bias voltage different from the first bias voltage.
较佳地，其中金氧半场效电晶体可为N型金氧半场效电晶体，且第一偏压高于第二偏压。Preferably, the metal-oxide-semiconductor field-effect transistor can be an N-type metal-oxide-semiconductor field-effect transistor, and the first bias voltage is higher than the second bias voltage.
较佳地，其中金氧半场效电晶体可为P型金氧半场效电晶体，且第一偏压低于第二偏压。Preferably, the metal-oxide-semiconductor field-effect transistor may be a P-type metal-oxide-semiconductor field-effect transistor, and the first bias voltage is lower than the second bias voltage.
较佳地，其中第一电压源可透过具有第一电阻值的第一电阻器连接于第二端，第二电压源可透过具有比第一电阻值低的第二电阻值的第二电阻器连接于第三端。Preferably, the first voltage source can be connected to the second end through a first resistor with a first resistance value, and the second voltage source can be connected to the second end through a second resistor with a second resistance value lower than the first resistance value. The resistor is connected to the third terminal.
较佳地，其中类比开关电路可进一步包含讯号提供电路。讯号提供电路连接于金氧半场效电晶体之汲极电极或源极电极并提供频率高于4GHz的高频讯号。Preferably, the analog switch circuit may further include a signal providing circuit. The signal supply circuit is connected to the drain electrode or the source electrode of the metal oxide semiconductor field effect transistor and provides a high frequency signal with a frequency higher than 4GHz.
根据本发明的另一目的，提出一种适用于高频讯号的类比开关电路。类比开关电路包含金氧半场效电晶体与控制开关。金氧半场效电晶体包含汲极电极、源极电极、闸极电极及体极电极。闸极偏压施加于闸极电极以控制金氧半场效电晶体导通或关闭。控制开关包含控制端、第一端、第二端及第三端。第一端连接于体极电极。与闸极偏压相关的控制偏压施加于控制端，使得当金氧半场效电晶体导通时，第一端连接于第二端，以及使得当金氧半场效电晶体关闭时，第一端连接于第三端。第二端连接于具有第一电阻值的第一电阻器，第三端连接于具有比第一电阻值低的第二电阻值之第二电阻器。According to another object of the present invention, an analog switch circuit suitable for high frequency signals is provided. The analog switch circuit includes a metal oxide half field effect transistor and a control switch. The metal oxide half field effect transistor includes a drain electrode, a source electrode, a gate electrode and a body electrode. A gate bias voltage is applied to the gate electrode to control the MOSFET to be turned on or off. The control switch includes a control terminal, a first terminal, a second terminal and a third terminal. The first end is connected to the body electrode. A control bias voltage related to the gate bias voltage is applied to the control terminal, so that when the metal oxide half field effect transistor is turned on, the first end is connected to the second end, and when the metal oxide half field effect transistor is turned off, The first end is connected to the third end. The second end is connected to a first resistor with a first resistance value, and the third end is connected to a second resistor with a second resistance value lower than the first resistance value.
较佳地，其中第二端可透过第一电阻器连接于提供第一偏压的第一电压源，第三端透过第二电阻器连接于提供与第一偏压不同的第二偏压之第二电压源。Preferably, the second end can be connected to the first voltage source that provides the first bias voltage through the first resistor, and the third end can be connected to the second bias source that provides the second bias voltage different from the first bias voltage through the second resistor. pressure of the second voltage source.
较佳地，其中金氧半场效电晶体可为N型金氧半场效电晶体，且第一偏压高于第二偏压。Preferably, the metal-oxide-semiconductor field-effect transistor can be an N-type metal-oxide-semiconductor field-effect transistor, and the first bias voltage is higher than the second bias voltage.
较佳地，其中金氧半场效电晶体可为P型金氧半场效电晶体，且第一偏压低于第二偏压。Preferably, the metal-oxide-semiconductor field-effect transistor may be a P-type metal-oxide-semiconductor field-effect transistor, and the first bias voltage is lower than the second bias voltage.
较佳地，其中类比开关电路可进一步包含讯号提供电路。讯号提供电路连接于金氧半场效电晶体的汲极电极或源极电极并提供频率高于4GHz的高频讯号。Preferably, the analog switch circuit may further include a signal providing circuit. The signal supply circuit is connected to the drain electrode or the source electrode of the metal oxide semiconductor field effect transistor and provides a high frequency signal with a frequency higher than 4GHz.
承上所述，依本发明之类比开关电路，其可具有一或多个下述优点：Based on the above, according to the analog switch circuit of the present invention, it may have one or more of the following advantages:
(1)此类比开关电路可藉由切换提供于金氧半场效电晶体的体极之偏压，藉此可在金氧半场效电晶体导通或关闭时改变其元件特性。(1) The analog switch circuit can switch the bias voltage provided to the body of the metal oxide semiconductor field effect transistor, thereby changing its device characteristics when the metal oxide semiconductor field effect transistor is turned on or off.
(2)此类比开关电路可藉由切换连接于金氧半场效电晶体之体极的电阻，藉此可在金氧半场效电晶体导通或关闭时改变其汲极(源极)-体极路径上的阻抗。(2) This analog switch circuit can change the drain (source) of the metal oxide semiconductor field effect transistor when it is turned on or off by switching the resistance connected to the body of the metal oxide half field effect transistor - Impedance on the body-pole path.
(3)此类比开关电路可藉由切换提供于金氧半场效电晶体之体极的偏压以及连接于金氧半场效电晶体之体极的电阻，藉此可最佳化金氧半场效电晶体导通或关闭时的元件特性。(3) This analog switch circuit can optimize the metal oxide semiconductor field effect transistor by switching the bias voltage provided on the body electrode of the metal oxide semiconductor field effect transistor and the resistance connected to the body electrode of the metal oxide semiconductor field effect transistor. The device characteristic when a half field effect transistor is turned on or off.
附图说明Description of drawings
图1是为本发明的类比开关电路的第一实施例的示意图。FIG. 1 is a schematic diagram of a first embodiment of an analog switch circuit of the present invention.
图2是为本发明的类比开关电路的第二实施例的示意图。FIG. 2 is a schematic diagram of a second embodiment of the analog switch circuit of the present invention.
图3是为本发明的类比开关电路的第三实施例的示意图。FIG. 3 is a schematic diagram of a third embodiment of the analog switch circuit of the present invention.
图4是为本发明的类比开关电路的第四实施例的示意图。FIG. 4 is a schematic diagram of a fourth embodiment of the analog switch circuit of the present invention.
符号说明Symbol Description
10：金氧半场效电晶体10: Gold Oxygen Half Field Effect Transistor
20：控制开关20: Control switch
30：讯号提供电路30: Signal supply circuit
B：体极电极B: body electrode
D：汲极电极D: drain electrode
G：闸极电极G: Gate electrode
S：源极电极S: source electrode
N1：第一端N1: first end
N2：第二端N2: second end
N3：第三端N3: third terminal
Nct：控制端Nct: control terminal
R1：第一电阻器R1: first resistor
R2：第二电阻器R2: second resistor
V1：第一偏压V1: first bias voltage
V2：第二偏压V2: second bias voltage
Vct：控制偏压Vct: control bias voltage
Vg：闸极偏压Vg: gate bias voltage
Vs1：第一电压源Vs1: first voltage source
Vs2：第二电压源Vs2: second voltage source
具体实施方式detailed description
为利贵审查员了解本发明的技术特征、内容与优点及其所能达成的功效，兹将本发明配合附图，并以实施例的表达形式详细说明如下，而其中所使用的图式，其主旨仅为示意及辅助说明书之用，未必为本发明实施后之真实比例与精准配置，故不应就所附的图式的比例与配置关系局限本发明于实际实施上的专利范围，合先叙明。In order for the examiner to understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is hereby combined with the accompanying drawings and described in detail in the form of embodiments as follows, and the drawings used therein are, Its purpose is only for illustration and auxiliary instructions, not necessarily the true proportion and precise configuration of the present invention after implementation, so the proportion and configuration relationship of the attached drawings should not limit the patent scope of the present invention in actual implementation. Explain first.
以下将参照相关图式，说明依本发明的类比开关电路的实施例，为使便于理解，下述实施例中的相同元件系以相同的符号标示来说明。Embodiments of the analog switch circuit according to the present invention will be described below with reference to related drawings. For ease of understanding, the same components in the following embodiments are described with the same symbols.
请参阅图1，其是为本发明的类比开关电路的第一实施例的示意图。图中，类比开关电路包含金氧半场效电晶体10与控制开关20。金氧半场效电晶体10包含汲极电极D、源极电极S、闸极电极G及体极电极B。闸极偏压Vg施加于闸极电极G以控制金氧半场效电晶体10导通或关闭。控制开关20包含控制端Nct、第一端N1、第二端N2及第三端N3。第一端N1连接于体极电极B。与闸极偏压Vg相关的控制偏压Vct施加于控制端Nct，使得当金氧半场效电晶体10导通时，第一端N1连接于第二端N2，以及使得当金氧半场效电晶体10关闭时，第一端N1连接于第三端N3。第二端N2连接于提供第一偏压V1的第一电压源Vs1，第三端N3连接于提供与第一偏压V1不同的第二偏压V2之第二电压源Vs2。Please refer to FIG. 1 , which is a schematic diagram of a first embodiment of the analog switch circuit of the present invention. In the figure, the analog switch circuit includes a metal oxide semiconductor field effect transistor 10 and a control switch 20 . The MOSFET 10 includes a drain electrode D, a source electrode S, a gate electrode G and a body electrode B. As shown in FIG. The gate bias voltage Vg is applied to the gate electrode G to control the MOSFET 10 to be turned on or off. The control switch 20 includes a control terminal Nct, a first terminal N1 , a second terminal N2 and a third terminal N3 . The first terminal N1 is connected to the body electrode B. The control bias voltage Vct related to the gate bias voltage Vg is applied to the control terminal Nct, so that when the metal oxide semiconductor field effect transistor 10 is turned on, the first terminal N1 is connected to the second terminal N2, and when the metal oxide half field effect transistor 10 When the effective transistor 10 is turned off, the first terminal N1 is connected to the third terminal N3. The second terminal N2 is connected to a first voltage source Vs1 providing a first bias voltage V1, and the third terminal N3 is connected to a second voltage source Vs2 providing a second bias voltage V2 different from the first bias voltage V1.
上述金氧半场效电晶体10的导通所指的是汲极电极D与源极电极S间的主动层有载子(电子或电洞，视金氧半场效电晶体的种类而定)通道的存在，而金氧半场效电晶体10的关闭所指的是汲极电极D与源极电极S间的主动层没有或仅有很窄的载子通道的存在，合先叙明。The conduction of the above-mentioned metal oxide half field effect transistor 10 means that the active layer between the drain electrode D and the source electrode S has carriers (electrons or holes, depending on the type of the metal oxide half field effect transistor). ) channels, and the closure of the metal oxide semiconductor field effect transistor 10 means that the active layer between the drain electrode D and the source electrode S has no or only a very narrow carrier channel, which will be described first .
具体来说，高频讯号可由汲极电极D输入，而由源极电极S输出，或是以相反的路径输入与输出。也就是说，对于所要传输的高频讯号，汲极电极D与源极电极S之一为讯号输入端，而另一个则为讯号输出端。在理想情况中，在讯号允许传输时，讯号传输路径，也就是汲极电极D与源极电极S间的路径，为低阻抗以降低损耗。相对地，在讯号禁止传输时，讯号传输路径希望能为高阻抗而增加讯号的隔离度。另一方面，在讯号允许传输时，讯号传输路径希望能为低阻抗以降低开关在电路中造成的插入阻抗。Specifically, the high-frequency signal can be input through the drain electrode D and output through the source electrode S, or input and output through the opposite path. That is to say, for the high-frequency signal to be transmitted, one of the drain electrode D and the source electrode S is a signal input terminal, and the other is a signal output terminal. Ideally, when the signal is allowed to transmit, the signal transmission path, that is, the path between the drain electrode D and the source electrode S, is low impedance to reduce loss. In contrast, when the signal is prohibited from being transmitted, the signal transmission path is expected to be high impedance to increase the isolation of the signal. On the other hand, when the signal is allowed to be transmitted, the signal transmission path is expected to be low impedance to reduce the insertion impedance caused by the switch in the circuit.
于是，在此实施例中，金氧半场效电晶体可为N型金氧半场效电晶体，且第一偏压V1高于第二偏压V2。由于用于控制控制开关20的控制偏压Vct与施加于闸极电极G之闸极偏压Vg相关且闸极偏压Vg控制金氧半场效电晶体10的导通或关闭，故控制开关20可根据金氧半场效电晶体10的导通或关闭，而决定金氧半场效电晶体10之体极电极B的连接状态。于是，在金氧半场效电晶体10导通时，体极电极B会连接于第一电压源Vs1而有较高的偏压，在金氧半场效电晶体10关闭时，体极电极B会连接于第二电压源Vs2而有较低的偏压。如此一来，在金氧半场效电晶体10导通时，金氧半场效电晶体10会因体极效应(body effect)，而具有较低的临界电压(threshold voltage,Vth)。举例来说，在输入的高频讯号为小讯号时，汲极电极D与源极电极S间的路径上的阻抗会与(Vgs-Vth)之反比相关，Vgs为闸极电极G与源极电极S之偏压差。此时，讯号传输路径，也就是汲极电极D与源极电极S间的路径上的阻抗会随著临界电压Vth降低而变低。相对地，在金氧半场效电晶体10关闭时，金氧半场效电晶体10会具有较高的临界电压Vth，而使汲极电极D与源极电极S间的路径上的阻抗变高。因此，在此实施例中，由于金氧半场效电晶体10之体极电极B上的偏压能随著金氧半场效电晶体10导通或关闭状况而改变，故此实施例的类比开关电路之讯号传输路径能在导通时具有较低的阻抗，在关闭时具有较高的阻抗，而符合理想类比开关的需求。需注意的是，本发明的实施例也包含第一偏压V1或第二偏压V2为0V的情况。也就是说，第一电压源Vs1或第二电压源Vs2可实际上为接地端。在本发明的较佳的实施例中，当金氧半场效电晶体10为N型金氧半场效电晶体时，第一偏压V1可为正偏压(大于0V)，第二偏压V2可为负偏压(小于0V)。需注意的是，第一偏压V1不可过大而使得汲极电极D或源极电极S与体极电极B导通。另一方面，在金氧半场效电晶体10导通且第一偏压V1为正偏压时，讯号输入端与体极电极B间的空乏区会变大，进而使得讯号输入端与体极电极B间的接面电容变小，而提升截止频率并降低藕合至体极电极B的讯号，因此也会降低讯号漏失至体极电极B的情况。Therefore, in this embodiment, the MOSFET can be an N-type MOSFET, and the first bias voltage V1 is higher than the second bias voltage V2. Since the control bias voltage Vct used to control the control switch 20 is related to the gate bias voltage Vg applied to the gate electrode G and the gate bias voltage Vg controls the conduction or closure of the metal oxide semiconductor field effect transistor 10, the control switch 20 can determine the connection state of the body electrode B of the metal oxide half field effect transistor 10 according to whether the metal oxide half field effect transistor 10 is turned on or off. Therefore, when the metal oxide half field effect transistor 10 is turned on, the body electrode B will be connected to the first voltage source Vs1 to have a higher bias voltage, and when the metal oxide half field effect transistor 10 is turned off, the body electrode B B is connected to the second voltage source Vs2 to have a lower bias. In this way, when the MOSFET 10 is turned on, the MOSFET 10 has a lower threshold voltage (Vth) due to the body effect. For example, when the input high-frequency signal is a small signal, the impedance on the path between the drain electrode D and the source electrode S will be related to the inverse ratio of (Vgs-Vth), Vgs is the gate electrode G and the source electrode The bias voltage difference of electrode S. At this time, the impedance of the signal transmission path, that is, the path between the drain electrode D and the source electrode S will become lower as the threshold voltage Vth decreases. Relatively, when the metal oxide half field effect transistor 10 is turned off, the metal oxide half field effect transistor 10 will have a higher threshold voltage Vth, so that the impedance on the path between the drain electrode D and the source electrode S becomes lower. high. Therefore, in this embodiment, since the bias voltage on the body electrode B of the metal oxide semiconductor field effect transistor 10 can change with the state of the metal oxide semiconductor field effect transistor 10 being turned on or off, the analogy of this embodiment The signal transmission path of the switch circuit can have a lower impedance when it is turned on, and a higher impedance when it is turned off, which meets the requirements of an ideal analog switch. It should be noted that the embodiments of the present invention also include the case where the first bias voltage V1 or the second bias voltage V2 is 0V. That is to say, the first voltage source Vs1 or the second voltage source Vs2 may actually be the ground terminal. In a preferred embodiment of the present invention, when the metal-oxide-semiconductor field-effect transistor 10 is an N-type metal-oxide-semiconductor field-effect transistor, the first bias voltage V1 can be a positive bias voltage (greater than 0V), and the second bias voltage V1 The voltage V2 can be a negative bias voltage (less than 0V). It should be noted that the first bias voltage V1 cannot be too large to make the drain electrode D or the source electrode S and the body electrode B conduct. On the other hand, when the metal oxide semiconductor field effect transistor 10 is turned on and the first bias voltage V1 is a positive bias voltage, the depletion region between the signal input terminal and the body electrode B will become larger, thereby making the signal input terminal and the body electrode B larger. The junction capacitance between the pole electrodes B becomes smaller, which increases the cut-off frequency and reduces the signal coupled to the body electrode B, thus also reducing the signal leakage to the body electrode B.
同理，金氧半场效电晶体10也可为P型金氧半场效电晶体，且第一偏压V1低于第二偏压V2。基本上此种情形类似于上述金氧半场效电晶体10为N型金氧半场效电晶体的实施例，仅施加于金氧半场效电晶体10之各电极上的工作偏压的极性需倒转。因第一偏压V1低于第二偏压V2，在金氧半场效电晶体10导通时，讯号传输路径仍会具有较低的阻抗，而在金氧半场效电晶体10关闭时，讯号传输路径仍会具有较高的阻抗。在本发明的较佳的实施例中，当金氧半场效电晶体为P型金氧半场效电晶体时，第一偏压V1可为负偏压(小于0V)，第二偏压V2可为正偏压(大于0V)。Similarly, the metal oxide half field effect transistor 10 can also be a P type metal oxide half field effect transistor, and the first bias voltage V1 is lower than the second bias voltage V2. Basically this kind of situation is similar to the above-mentioned embodiment in which the metal oxide half field effect transistor 10 is an N-type metal oxide half field effect transistor. Polarity needs to be reversed. Because the first bias voltage V1 is lower than the second bias voltage V2, when the metal oxide semiconductor field effect transistor 10 is turned on, the signal transmission path still has a low impedance, and when the metal oxide half field effect transistor 10 is turned off , the signal transmission path will still have a high impedance. In a preferred embodiment of the present invention, when the metal-oxide-semiconductor field-effect transistor is a P-type metal-oxide-semiconductor field-effect transistor, the first bias voltage V1 can be a negative bias voltage (less than 0V), and the second bias voltage V2 can be positive bias (greater than 0V).
请参阅图2，其是为本发明的类比开关电路的第二实施例的示意图。图中，类比开关电路包含金氧半场效电晶体10与控制开关20。金氧半场效电晶体10包含汲极电极D、源极电极S、闸极电极G及体极电极B。闸极偏压Vg施加于闸极电极G以控制金氧半场效电晶体10导通或关闭。控制开关20包含控制端Nct、第一端N1、第二端N2及第三端N3。第一端N1连接于体极电极B。与闸极偏压Vg相关的控制偏压Vct施加于控制端Nct，使得当金氧半场效电晶体10导通时，第一端N1连接于第二端N2，以及使得当金氧半场效电晶体10关闭时，第一端N1连接于第三端N3。第二端N2连接于具有第一电阻值的第一电阻器R1，第三端N3连接于具有比第一电阻值低的第二电阻值之第二电阻器R2。Please refer to FIG. 2 , which is a schematic diagram of a second embodiment of the analog switch circuit of the present invention. In the figure, the analog switch circuit includes a metal oxide semiconductor field effect transistor 10 and a control switch 20 . The MOSFET 10 includes a drain electrode D, a source electrode S, a gate electrode G and a body electrode B. As shown in FIG. The gate bias voltage Vg is applied to the gate electrode G to control the MOSFET 10 to be turned on or off. The control switch 20 includes a control terminal Nct, a first terminal N1 , a second terminal N2 and a third terminal N3 . The first terminal N1 is connected to the body electrode B. The control bias voltage Vct related to the gate bias voltage Vg is applied to the control terminal Nct, so that when the metal oxide semiconductor field effect transistor 10 is turned on, the first terminal N1 is connected to the second terminal N2, and when the metal oxide half field effect transistor 10 When the effective transistor 10 is turned off, the first terminal N1 is connected to the third terminal N3. The second terminal N2 is connected to a first resistor R1 having a first resistance value, and the third terminal N3 is connected to a second resistor R2 having a second resistance value lower than the first resistance value.
具体来说，在金氧半场效电晶体10导通时，希望讯号输入端(汲极电极D或源极电极S)至体极电极B的路径具有尽量高的阻抗，以避免讯号由体极电极B洩漏。相对地，在金氧半场效电晶体10关闭时，希望讯号输入端(汲极电极D或源极电极S)至体极电极B的路径具有低的阻抗，在此情况下，由于讯号传输路径相对于讯号输入端至体极电极B的路径可具有较高的阻抗，高频讯号将较易往体极电极B方向传输而被吸收。换句话说，由讯号输入端洩漏至讯号输出端的高频讯号将会降低，整体类比开关电路关闭时的隔离度将会提升。Specifically, when the MOSFET 10 is turned on, it is desirable that the path from the signal input end (drain electrode D or source electrode S) to the body electrode B has as high impedance as possible to prevent the signal from passing through the body. Electrode B leaks. In contrast, when the metal oxide semiconductor field effect transistor 10 is turned off, it is desirable that the path from the signal input terminal (drain electrode D or source electrode S) to the body electrode B has a low impedance. In this case, due to signal transmission Compared with the path from the signal input end to the body electrode B, the path may have higher impedance, and the high frequency signal will be more easily transmitted to the body electrode B and absorbed. In other words, the high-frequency signal leakage from the signal input terminal to the signal output terminal will be reduced, and the isolation when the overall analog switch circuit is turned off will be improved.
在此实施例中，为了达到上述效果，金氧半场效电晶体10的体极电极B可藉由控制开关20，在金氧半场效电晶体10导通时连接于具有高电阻值的电阻器(第一电阻器R1)，在金氧半场效电晶体10关闭时连接于具有低电阻值的电阻器(第二电阻器R2)。控制控制开关20的方式大体上与第一实施例相同，于此不再赘述。需注意的是，本发明的实施例包含第二电阻器R2之第二电阻值极小的情况。举例来说，第二电阻器R2可为连接至接地端的导线而实际上电阻值趋近于零。如此一来，在金氧半场效电晶体10导通时，讯号输入端(汲极电极D或源极电极S)至体极电极B的路径便会具有高的阻抗，而在金氧半场效电晶体10关闭时，讯号输入端至体极电极B的路径又会具有低的阻抗，而达到理想类比开关的效果。In this embodiment, in order to achieve the above effect, the body electrode B of the metal oxide half field effect transistor 10 can be connected to a high resistance electrode B by controlling the switch 20 when the metal oxide half field effect transistor 10 is turned on. The resistor (first resistor R1 ) is connected to a resistor (second resistor R2 ) having a low resistance value when the MOSFET 10 is turned off. The method of controlling the control switch 20 is basically the same as that of the first embodiment, and will not be repeated here. It should be noted that the embodiments of the present invention include the case that the second resistance of the second resistor R2 is extremely small. For example, the second resistor R2 can be a wire connected to the ground terminal, and its resistance value is actually close to zero. In this way, when the metal oxide semiconductor field effect transistor 10 is turned on, the path from the signal input terminal (drain electrode D or source electrode S) to the body electrode B will have high impedance, while in the metal oxide semiconductor field effect transistor 10 When the field effect transistor 10 is turned off, the path from the signal input terminal to the body electrode B will have a low impedance again, thus achieving the effect of an ideal analog switch.
请参阅图3，其是为本发明的类比开关电路的第三实施例的示意图。在此实施例中，类比开关电路可兼具第一实施例与第二实施例中类比开关电路的特征。图中，当金氧半场效电晶体10导通时，金氧半场效电晶体10的体极电极B可透过具有较高的第一电阻值之第一电阻器R1连结于提供第一偏压V1的第一电压源Vs1。相对的，当金氧半场效电晶体10关闭时，金氧半场效电晶体10的体极电极B可透过具有较低的第二电阻值之第二电阻器R2连结于提供第二偏压V2之第二电压源Vs2。在此实施例中，金氧半场效电晶体10可为N型金氧半场效电晶体，而第一偏压V1高于第二偏压V2。较佳地，第一偏压V1可为正偏压，第二偏压V2可为负偏压。Please refer to FIG. 3 , which is a schematic diagram of a third embodiment of the analog switch circuit of the present invention. In this embodiment, the analog switch circuit can have the features of the analog switch circuits in the first embodiment and the second embodiment. In the figure, when the metal oxide half field effect transistor 10 is turned on, the body electrode B of the metal oxide half field effect transistor 10 can be connected to provide the second resistor R1 through the first resistor R1 having a higher first resistance value. A first voltage source Vs1 for biasing V1. In contrast, when the metal oxide half field effect transistor 10 is turned off, the body electrode B of the metal oxide half field effect transistor 10 can be connected to provide the second resistor R2 through the second lower resistance value. The second voltage source Vs2 of the bias voltage V2. In this embodiment, the MOSFET 10 can be an N-type MOSFET, and the first bias voltage V1 is higher than the second bias voltage V2. Preferably, the first bias voltage V1 can be a positive bias voltage, and the second bias voltage V2 can be a negative bias voltage.
于是，当金氧半场效电晶体10导通时，讯号输入端至讯号输出端的讯号传输路径将因体极效应而具有低的阻抗，且讯号输入端至体极电极的路径将因连接于具有高电阻值的第一电阻器R1而具有高阻抗。当金氧半场效电晶体10关闭时，讯号输入端至讯号输出端的讯号传输路径将因体极效应而具有高的阻抗，且讯号输入端至体极电极B的路径将因连接于具有低电阻值的第二电阻器R2而具有低阻抗。如此一来，当金氧半场效电晶体10导通时，高频讯号将会优先传输于具有低阻抗的讯号传输路径，而减少讯号藕合至体极电极B的损耗。相对地，当金氧半场效电晶体10关闭时，高频讯号将会优先选择具有低阻抗的讯号输入端-体极电极B的路径，而使讯号传输路径两端的隔离度提高。Therefore, when the MOSFET 10 is turned on, the signal transmission path from the signal input end to the signal output end will have low impedance due to the body effect, and the path from the signal input end to the body electrode will be connected to the The first resistor R1 having a high resistance value has high impedance. When the MOSFET 10 is turned off, the signal transmission path from the signal input end to the signal output end will have high impedance due to the body effect, and the path from the signal input end to the body electrode B will have a low The resistance value of the second resistor R2 has a low impedance. In this way, when the MOSFET 10 is turned on, the high-frequency signal will be preferentially transmitted in the signal transmission path with low impedance, thereby reducing the loss of the signal coupled to the body electrode B. Relatively, when the MOSFET 10 is turned off, the high-frequency signal will preferentially select the path of the signal input end-the body electrode B with low impedance, so that the isolation between the two ends of the signal transmission path is improved.
请参阅图4，其是为本发明的类比开关电路的第四实施例的示意图。图中，类比开关电路可进一步包含讯号提供电路30。讯号提供电路30连接于金氧半场效电晶体10的汲极电极D并提供频率高于4GHz的高频讯号。在此实施例中，金氧半场效电晶体10的汲极电极D即为讯号输入端。在另一实施例中，讯号提供电路30也可连接于金氧半场效电晶体10的源极电极S而以源极电极S为讯号输入端。Please refer to FIG. 4 , which is a schematic diagram of a fourth embodiment of the analog switch circuit of the present invention. In the figure, the analog switch circuit may further include a signal providing circuit 30 . The signal supply circuit 30 is connected to the drain electrode D of the MOSFET 10 and provides a high frequency signal with a frequency higher than 4 GHz. In this embodiment, the drain electrode D of the MOSFET 10 is the signal input terminal. In another embodiment, the signal providing circuit 30 may also be connected to the source electrode S of the MOSFET 10 and use the source electrode S as a signal input terminal.
在输入讯号为低频讯号的情况下，由于金氧半场效电晶体10各电极间形成的寄生电容对输入讯号来说仍是高阻抗，因此讯号隔离的效果已相当良好而使本发明的类比开关电路的功效并不明显。然而，当输入讯号为高频讯号，尤其是在频率超过4GHz时，输入讯号就容易经由寄生电容藕接至地或其他电极。于是，当本发明之类比开关电路的金氧半场效电晶体10的讯号输入端(汲极电极D或源极电极S)连接于讯号提供电路30时，将可针对来自讯号提供电路30的频率超过4GHz的高频讯号有效改善讯号传输路径与讯号输入端至体极电极的路径的特性，以使得各路径上的阻抗随著金氧半场效电晶体10的导通或关闭而最佳化。更佳地，讯号提供电路30可提供的频率超过5GHz的高频讯号，此时本发明的类比开关电路的功效将更为明显。When the input signal is a low-frequency signal, since the parasitic capacitance formed between the electrodes of the metal-oxide-semiconductor field-effect transistor 10 is still high impedance for the input signal, the effect of signal isolation is quite good and the analog of the present invention The efficacy of the switching circuit is not obvious. However, when the input signal is a high-frequency signal, especially when the frequency exceeds 4GHz, the input signal is easily coupled to the ground or other electrodes through parasitic capacitance. Thus, when the signal input terminal (drain electrode D or source electrode S) of the metal oxide half field effect transistor 10 of the analog switch circuit of the present invention is connected to the signal supply circuit 30, it will be able to respond to the signal from the signal supply circuit 30 The high-frequency signal with a frequency exceeding 4 GHz effectively improves the characteristics of the signal transmission path and the path from the signal input end to the body electrode, so that the impedance on each path is optimized as the metal oxide semiconductor field effect transistor 10 is turned on or off. change. More preferably, the signal providing circuit 30 can provide a high-frequency signal with a frequency exceeding 5 GHz. At this time, the effect of the analog switch circuit of the present invention will be more obvious.
以上所述仅为举例性，而非为限制性者。任何未脱离本发明之精神与范畴，而对其进行之等效修改或变更，均应包含于后附的申请专利范围中。The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the appended patent application.
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| CN109167520A (en) * | 2018-11-01 | 2019-01-08 | 康舒电子(东莞)有限公司 | Primary side integrated circuit module of power supply |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5448198A (en) * | 1992-03-31 | 1995-09-05 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having circuitry for limiting forward junction current from a terminal |
| US5610533A (en) * | 1993-11-29 | 1997-03-11 | Mitsubishi Denki Kabushiki Kaisha | Switched substrate bias for logic circuits |
| US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
| US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
| US5786724A (en) * | 1996-12-17 | 1998-07-28 | Texas Instruments Incorporated | Control of body effect in MOS transistors by switching source-to-body bias |
| US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
| CN1237040A (en) * | 1998-03-30 | 1999-12-01 | 日本电气株式会社 | Logic circuit having reduced power consumption |
| US6094088A (en) * | 1997-02-26 | 2000-07-25 | Nec Corporation | Radio frequency switch circuit having resistors connected to back gates of transistors |
| US6281738B1 (en) * | 1998-09-04 | 2001-08-28 | Nec Corporation | Bus driver, output adjusting method and driver |
| US6741098B2 (en) * | 1999-11-25 | 2004-05-25 | Texas Instruments Incorporated | High speed semiconductor circuit having low power consumption |
| US6807109B2 (en) * | 2001-12-05 | 2004-10-19 | Renesas Technology Corp. | Semiconductor device suitable for system in package |
| CN101053157A (en) * | 2004-09-08 | 2007-10-10 | 皇家飞利浦电子股份有限公司 | Fast switching circuit with input hysteresis |
| US20080258799A1 (en) * | 2007-04-17 | 2008-10-23 | Kabushiki Kaisha Toshiba | High frequency switching circuit |
| US20080315950A1 (en) * | 2007-06-06 | 2008-12-25 | Samsung Electronics Co., Ltd. | Integrated Circuit Amplifiers Having Switch Circuits Therein that Provide Reduced 1/f Noise |
| US8063516B2 (en) * | 2009-01-15 | 2011-11-22 | Microsemi Corporation | Four quadrant MOSFET based switch |
| CN103595381A (en) * | 2012-08-16 | 2014-02-19 | 特里奎恩特半导体公司 | Switching device with non-negative biasing |
| US8723260B1 (en) * | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US8729948B2 (en) * | 2012-01-20 | 2014-05-20 | Samsung Electro-Mechanics Co., Ltd. | High frequency switch |
| CN103929163A (en) * | 2013-01-15 | 2014-07-16 | 特里奎恩特半导体公司 | Switching device with resistor divider |
-
2015
- 2015-03-12 CN CN201510108568.XA patent/CN106033961B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5448198A (en) * | 1992-03-31 | 1995-09-05 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having circuitry for limiting forward junction current from a terminal |
| US5610533A (en) * | 1993-11-29 | 1997-03-11 | Mitsubishi Denki Kabushiki Kaisha | Switched substrate bias for logic circuits |
| US5689209A (en) * | 1994-12-30 | 1997-11-18 | Siliconix Incorporated | Low-side bidirectional battery disconnect switch |
| US5767733A (en) * | 1996-09-20 | 1998-06-16 | Integrated Device Technology, Inc. | Biasing circuit for reducing body effect in a bi-directional field effect transistor |
| US5786724A (en) * | 1996-12-17 | 1998-07-28 | Texas Instruments Incorporated | Control of body effect in MOS transistors by switching source-to-body bias |
| US6094088A (en) * | 1997-02-26 | 2000-07-25 | Nec Corporation | Radio frequency switch circuit having resistors connected to back gates of transistors |
| US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
| CN1237040A (en) * | 1998-03-30 | 1999-12-01 | 日本电气株式会社 | Logic circuit having reduced power consumption |
| US6281738B1 (en) * | 1998-09-04 | 2001-08-28 | Nec Corporation | Bus driver, output adjusting method and driver |
| US6741098B2 (en) * | 1999-11-25 | 2004-05-25 | Texas Instruments Incorporated | High speed semiconductor circuit having low power consumption |
| US6807109B2 (en) * | 2001-12-05 | 2004-10-19 | Renesas Technology Corp. | Semiconductor device suitable for system in package |
| CN101053157A (en) * | 2004-09-08 | 2007-10-10 | 皇家飞利浦电子股份有限公司 | Fast switching circuit with input hysteresis |
| US20080258799A1 (en) * | 2007-04-17 | 2008-10-23 | Kabushiki Kaisha Toshiba | High frequency switching circuit |
| US20080315950A1 (en) * | 2007-06-06 | 2008-12-25 | Samsung Electronics Co., Ltd. | Integrated Circuit Amplifiers Having Switch Circuits Therein that Provide Reduced 1/f Noise |
| US8063516B2 (en) * | 2009-01-15 | 2011-11-22 | Microsemi Corporation | Four quadrant MOSFET based switch |
| US8723260B1 (en) * | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| US8729948B2 (en) * | 2012-01-20 | 2014-05-20 | Samsung Electro-Mechanics Co., Ltd. | High frequency switch |
| CN103595381A (en) * | 2012-08-16 | 2014-02-19 | 特里奎恩特半导体公司 | Switching device with non-negative biasing |
| CN103929163A (en) * | 2013-01-15 | 2014-07-16 | 特里奎恩特半导体公司 | Switching device with resistor divider |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109167520A (en) * | 2018-11-01 | 2019-01-08 | 康舒电子(东莞)有限公司 | Primary side integrated circuit module of power supply |
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|---|---|
| CN106033961B (en) | 2019-09-03 |
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