CN106025084A - Organic solar cell based on ZnO nano particle cathode buffer layer and preparation method thereof - Google Patents

Organic solar cell based on ZnO nano particle cathode buffer layer and preparation method thereof Download PDF

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CN106025084A
CN106025084A CN201610547770.7A CN201610547770A CN106025084A CN 106025084 A CN106025084 A CN 106025084A CN 201610547770 A CN201610547770 A CN 201610547770A CN 106025084 A CN106025084 A CN 106025084A
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buffer layer
zno nano
cathode buffer
organic solar
lac
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CN106025084B (en
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于军胜
范谱
王瀚雨
黄江
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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Abstract

The invention discloses an organic solar cell based on a ZnO nano particle cathode buffer layer and a preparation method thereof, which belongs to the field of organic semiconductor thin-film solar cells. According to the invention, the organic solar cell uses a positive structure, and is composed of a substrate, a transparent conductive anode ITO, an anode buffer layer, a photoactive layer, a cathode buffer layer and a metal cathode in order from the bottom to the top; the cathode buffer layer is formed by simultaneously incorporating a small organic molecule material 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) and shell-lac in a ZnO nano particle dispersion liquid; spaces between ZnO nano particles are filled with the incorporated small organic molecule material 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA); the dispersion of ZnO nano particles is improved; defects in the cathode buffer layer are reduced; the electron transport ability of the cathode buffer layer is improved; through the incorporation of the shell-lac, the ZnO nano particles and the small organic molecule material are compactly combined; the surface roughness of the cathode buffer layer is reduced; the electron collection ability of the cathode buffer layer is enhanced; and the photoelectric conversion efficiency of a device is improved.

Description

Organic solar batteries based on ZnO nano particulate cathodic cushion and preparation method
Technical field
The invention belongs to organic polymer photovoltaic device or organic semiconductor thin-film area of solar cell, be specifically related to one Plant organic solar batteries based on ZnO nano particulate cathodic cushion.
Background technology
Along with the development of World Economics, the problem such as energy resource consumption, environmental pollution is increasingly becoming the primary of countries in the world concern Problem, traditional fossil energy continually develops, along with people's, the edge having tended to exhausted.Solar energy is as a kind of renewable energy Source is just meeting this requirement.Solar energy arrives the energy on ground each second and is up to 800,000 kilowatts, if earth surface 0.1% too Sun can transfer electric energy, number turnover 5% to, and every annual electricity generating capacity is just up to 5.6 × 1012Kilowatt/hour.Effective utilization at solar energy In, it is the most with fastest developing speed that solar photoelectric utilizes, most active research field, be the project that wherein attracts most attention it One.The difference of the character according to solaode photoactive layer material, can be divided into inorganic semiconductor material by photoactive layer material Material and organic semiconducting materials.Due to development starting early, research ratio is wide, based on inorganic semiconductor material for inorganic semiconductor material The inorganic solar cell of material occupies leading position in solar cell application.But inorganic semiconductor material itself has it Weak point, such as processing technique are extremely complex, material requirements is harsh, be difficult to carry out large area flexible processing, some material has Toxic etc., these shortcomings constrain the further development of inorganic solar cell.Compared with inorganic semiconductor material, based on organic The organic solar batteries of semi-conducting material, not only has the highest theoretical opto-electronic conversion effect identical with inorganic solar cell Rate, but also have light weight, can water-laid film, can be processed into specific character, easily make flexible device, even can realize complete The significant advantages such as plastic, oneself is through becoming one of focus of research both at home and abroad at present, is also the hope place solving energy crisis.
But, compared with inorganic solar cell large-scale production, organic solar batteries is due to its current light Photoelectric transformation efficiency is the most relatively low, and its commercialization also needs time.In various raising organic solar batteries photoelectric transformation efficiencies Measure in, preparing suitable cathode buffer layer is a kind of largely effective method.Currently, commonly used cathode cushioning layer material For the N-shaped inorganic metal compound of solubility, such as ZnO, TiOxAnd Cs2CO3, wherein it is most widely used with ZnO.Use eurymeric Structure, and use inorganic metal compound as cathode buffer layer, the efficiency of organic solar batteries and stability can be made to obtain Must be obviously improved.
But, when using spin coating ZnO nano particle dispersion as cathode buffer layer, due to the gap between ZnO particle Relatively big, bad dispersibility, easily form defect, thus cause the transmission of carrier to be obstructed with separating, ZnO nano particle film simultaneously Interface the most coarse so that device has bigger interface contact resistance and higher Carrier recombination probability, and this all will be sternly The performance of weight constraint device.Therefore, how research optimizes and modifies inorganic metal compound cathode buffer layer, is that raising is organic too Sun can the effective way of cell photoelectric conversion efficiency, be also the emphasis of current organic solar batteries area research and difficult point it One.
Summary of the invention
Problem to be solved by this invention is: how to provide a kind of based on ZnO nano particulate cathodic cushion organic too Sun energy battery and preparation method thereof, solves owing to the gap between ZnO particle is relatively big, and bad dispersibility easily forms defect, thus The transmission causing carrier is obstructed with separating, and the interface of ZnO nano particle film is the most coarse simultaneously so that device has bigger Interface contact resistance and higher Carrier recombination probability, this is all by the problem of the performance of serious constraint device.
The technical scheme is that
A kind of organic solar batteries based on ZnO nano particulate cathodic cushion, this solaode uses eurymeric knot Structure, is followed successively by from top to bottom: substrate, transparent conductive anode ITO, anode buffer layer, photoactive layer, cathode buffer layer, and metal is cloudy Pole；Described cathode buffer layer is for mix a certain proportion of organic small molecule material 1,4,5,8-in ZnO nano particle dispersion Naphthalenetetracarbacidic acidic acid anhydride (NTCDA) and Lac, the mass percent of three kinds of materials consists of: ZnO 80%～89%, organic molecule Material Isosorbide-5-Nitrae, 5,8-naphthalenetetracarbacidic acidic acid anhydrides (NTCDA) 0.5%～10%, Lac 0.5%～10%, cathode buffer layer thickness range is 30～60nm.
Further, described photoactive layer is by the mixed solution of electron donor material PTB7 Yu electron acceptor material PC71BM Being prepared from, thickness range is 50～300nm；PTB7 and PC in described mixed solution71The mass percent of BM is 1:20～5: 1, the concentration of described mixed solution is 10～30mg/ml.
Further, described anode buffer layer material is PEDOT:PSS, and thickness range is 5～20nm.
Further, described metallic cathode material is one or more in Ag, Al or Au, and thickness of thin layer scope is 100 ～200nm.
Further, described transparent polymer material is polyethylene, polymethyl methacrylate, Merlon, poly-amino Formic acid esters, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
The invention also discloses the preparation side of a kind of organic solar batteries based on ZnO nano particulate cathodic cushion Method, preparation process comprises the following steps:
1) substrate being made up of transparent substrates and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；
2) at transparent conductive anode ITO surface rotary coating, print or spray anode buffer layer PEDOT:PSS solution, and Carry out thermal annealing
3) mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing is used to prepare on anode buffer layer PTB7:PC71BM photoactive layer；
4) ZnO nano particle dispersion ethanol dilution 10～100 times, then NTCDA and Lac are dissolved in diluted After ZnO nano particle dispersion in, be subsequently placed on mixing platform stirring, prepare ZnO nano particle dispersion with organic Small molecule material and the mixed solution of Lac；
5) transparent conductive anode ITO surface rotary coating, print or spray ZnO nano particle dispersion with organic little point Sub-material and the mixed solution of Lac, and the thin film formed is carried out low-temperature bake, prepare cathode buffer layer；
6) evaporation metal negative electrode on anode buffer layer.
Further, step (2) described anode buffer layer thermal annealing temperatures scope is at 120～140 DEG C, and time range is 25 ～35min.
Further, step (5) described thin film low temperature baking temperature range at 30～40 DEG C, time range be 10～ 30min。
Further, described thermal annealing and low-temperature bake mode use Thermostatic platform heating, baking oven for heating, far infrared to add Heat, Hot-blast Heating one or more.
It is an advantage of the current invention that:
1, by introducing organic small molecule material NTCDA in cathode buffer layer ZnO nano granule, it is filled with ZnO nano Space between granule, improves the dispersibility of ZnO nano granule, decreases the defect in cathode buffer layer, adds negative electrode The electric conductivity of cushion.
2, by introducing organic small molecule material NTCDA in cathode buffer layer ZnO nano granule, improve negative electrode buffering The electron mobility of layer, decreases the recombination probability again of carrier.
3, by introducing Lac in cathode buffer layer ZnO nano granule and organic small molecule material NTCDA so that ZnO The combination of nano-particle and organic small molecule material is finer and close, reduces the surface roughness of cathode buffer layer.
4, by introducing organic small molecule material NTCDA and Lac in cathode buffer layer ZnO nano granule, modify The pattern of ZnO nano particle film, defines more preferable Ohmic contact at cathode buffer layer and photoactive layer interface, increases device The density of photocurrent of part.
Accompanying drawing explanation
Fig. 1 is the knot of a kind of based on ZnO nano particulate cathodic cushion organic solar batteries involved in the present invention Structure schematic diagram；
In figure, reference is: 1, substrate, 2, transparent conductive anode ITO, 3, anode buffer layer, 4, photoactive layer, and 5 negative electrodes Cushion, 6, metallic cathode.
Detailed description of the invention:
Below in conjunction with the accompanying drawings and embodiment the invention will be further described.
Embodiment 1 (matched group):
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with Cover ZnO nano granule (5000rpm, 40s, 50nm) and prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 ℃,20min)；Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM 1.5,100mW/ cm2, record the open-circuit voltage (V of deviceOC)=0.72V, short circuit current (JSC)=12.9mA/cm2, fill factor, curve factor (FF)= 0.62, photoelectric transformation efficiency (PCE)=5.89%.
Embodiment 2:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 0.5wt%, Lac to cover the mixed solution of ZnO nano granule and NTCDA and Lac Accounting is 10wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min)；Delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.73V, short circuit current (JSC)=13.1mA/cm2, fill factor, curve factor (FF)=0.64, photoelectric transformation efficiency (PCE) =5.98%.
Embodiment 3:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 1wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 9.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.72V, short circuit current (JSC)=13.7mA/cm2, fill factor, curve factor (FF)=0.62, photoelectric transformation efficiency (PCE) =6.14%.
Embodiment 4:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 1.5wt%, Lac to cover the mixed solution of ZnO nano granule and NTCDA and Lac Accounting is 9wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.73V, short circuit current (JSC)=13.6mA/cm2, fill factor, curve factor (FF)=0.65, photoelectric transformation efficiency (PCE) =6.41%.
Embodiment 5:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 2wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 8.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.72V, short circuit current (JSC)=14.0mA/cm2, fill factor, curve factor (FF)=0.66, photoelectric transformation efficiency (PCE) =6.68%.
Embodiment 6:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 3wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 7.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.73V, short circuit current (JSC)=13.6mA/cm2, fill factor, curve factor (FF)=0.68, photoelectric transformation efficiency (PCE) =6.81%.
Embodiment 7:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 4wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 6.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.73V, short circuit current (JSC)=13.1mA/cm2, fill factor, curve factor (FF)=0.65, photoelectric transformation efficiency (PCE) =6.45%.
Embodiment 8:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 6wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 4.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.72V, short circuit current (JSC)=12.9mA/cm2, fill factor, curve factor (FF)=0.64, photoelectric transformation efficiency (PCE) =6.18%.
Embodiment 9:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 8wt%, and Lac accounts for cover the mixed solution of ZnO nano granule and NTCDA and Lac Ratio is 2.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), delay at negative electrode Rush evaporation metal negative electrode Ag (100nm) on layer.Under standard test condition: AM 1.5,100mW/cm2, record the open circuit of device Voltage (VOC)=0.72V, short circuit current (JSC)=12.5mA/cm2, fill factor, curve factor (FF)=0.64, photoelectric transformation efficiency (PCE) =5.83%.
Embodiment 10:
The surface roughness substrate being made up of transparent substrates and transparent conductive anode ITO less than 1nm is carried out, Dry up with nitrogen after cleaning；On transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) Prepare anode buffer layer, and the thin film formed is carried out thermal annealing (130 DEG C, 30min), anode buffer layer uses spin coating Preparation PTB7:PC71BM (1:1.7,20mg/ml) photoactive layer (1500rpm, 50s, 200nm), rotates on photoactive layer surface and is coated with (5000rpm, 40s, 50nm, NTCDA accounting is 10wt%, Lac to cover the mixed solution of ZnO nano granule and NTCDA and Lac Accounting is 0.5wt%) prepare cathode buffer layer, and the thin film formed is carried out low-temperature bake (30 DEG C, 20min), at negative electrode Evaporation metal negative electrode Ag (100nm) on cushion.Under standard test condition: AM 1.5,100mW/cm2, record opening of device Road voltage (VOC)=0.73V, short circuit current (JSC)=11.7mA/cm2, fill factor, curve factor (FF)=0.62, photoelectric transformation efficiency (PCE)=5.42%.
Table 1 organic solar batteries device photovoltaic performance parameter
As can be seen from the above table: by optimize in ZnO nano particle dispersion mix organic small molecule material NTCDA and (solaode that i.e. embodiment 6 is prepared from, structure is the solaode that Lac prepares: ITO/PEDOT:PSS/ PTB7:PC71Compared in ZnO nano particle dispersion it is not incorporated into organic small molecule material BM/ZnO:NTCDA: Lac/Ag) (solaode that i.e. embodiment 1 is prepared from, structure is the solaode that NTCDA and Lac prepare: ITO/ PEDOT:PSS/PTB7:PC71BM/ZnO/Ag), its short-circuit current density becomes big, and fill factor, curve factor improves, and this is due to ZnO nano Particle dispersion mixes organic small molecule material NTCDA and Lac, is effectively filled with the space between ZnO nano granule, Decrease the defect in cathode buffer layer, thus improve the electron mobility of cathode buffer layer, make ZnO by mixing Lac The combination of nano-particle and organic small molecule material is finer and close, promotes the stability of cathode buffer layer, and has modified ZnO and receive The film morphology of rice grain, defines more preferable Ohmic contact at cathode buffer layer and photoactive layer interface, increases device Density of photocurrent and fill factor, curve factor, finally make the photoelectric transformation efficiency of device be greatly improved.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to Citing and descriptive purpose, and be not intended to limit the invention in described scope of embodiments.In addition people in the art Member, it is understood that the invention is not limited in above-described embodiment, can also make more kinds of according to the teachings of the present invention Variants and modifications, within these variants and modifications all fall within scope of the present invention.Protection scope of the present invention by The appended claims and equivalent scope thereof are defined.

Claims (9)

1. an organic solar batteries based on ZnO nano particulate cathodic cushion, it is characterised in that this solaode is adopted Using eurymeric structure, be followed successively by from top to bottom: substrate, transparent conductive anode ITO, anode buffer layer, photoactive layer, negative electrode buffers Layer, metallic cathode；Described cathode buffer layer is the organic small molecule material mixing certain proportioning in ZnO nano particle dispersion Isosorbide-5-Nitrae, 5,8-naphthalenetetracarbacidic acidic acid anhydride (NTCDA) and Lac, the mass percent of three kinds of materials is: ZnO80%～89%, organic little point Sub-material Isosorbide-5-Nitrae, 5,8-naphthalenetetracarbacidic acidic acid anhydrides (NTCDA) 0.5%～10%, Lac 0.5%～10%, cathode buffer layer thickness range It is 30～60nm.
A kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 1, its feature It is: described photoactive layer is by electron donor material PTB7 and electron acceptor material PC71The mixed solution of BM is prepared from, thickness Scope is 50～300nm；PTB7 and PC in described mixed solution71The mass percent of BM is 1:20～5:1, described mixed solution Concentration be 10～30mg/ml.
A kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 1, its feature Being: described anode buffer layer material is PEDOT:PSS, thickness range is 5～20nm.
A kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 1, its feature Being: described metallic cathode material is one or more in Ag, Al or Au, thickness of thin layer scope is 100～200nm.
A kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 1, its feature Being: described backing material is glass or transparent polymer, described transparent polymer material is polyethylene, poly-methyl methacrylate Ester, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
6. according to a kind of based on ZnO nano particulate cathodic cushion the organic solar electricity described in any one of claim 1-5 The preparation method in pond, it is characterised in that preparation process comprises the following steps:
1) substrate being made up of transparent substrates and transparent conductive anode ITO is carried out, dries up with nitrogen after cleaning；
2) at transparent conductive anode ITO surface rotary coating, print or spray anode buffer layer PEDOT:PSS solution, and carrying out Thermal annealing；
3) mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing is used to prepare PTB7 on anode buffer layer: PC71BM photoactive layer；
4) ZnO nano particle dispersion ethanol dilution 10～100 times, then after NTCDA and Lac are dissolved in dilution In ZnO nano particle dispersion, be subsequently placed on mixing platform stirring, prepare ZnO nano particle dispersion with organic little point Sub-material and the mixed solution of Lac；
5) at transparent conductive anode ITO surface rotary coating, print or spray ZnO nano particle dispersion and organic molecule material Material and the mixed solution of Lac, and the thin film formed is carried out low-temperature bake, prepare cathode buffer layer；
6) evaporation metal negative electrode on cathode buffer layer.
The preparation of a kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 6 Method, it is characterised in that: step (2) described anode buffer layer thermal annealing temperatures scope is at 120～140 DEG C, and time range is 25 ～35min.
The preparation of a kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 6 Method, it is characterised in that: step (5) described thin film low temperature baking temperature range at 30～40 DEG C, time range be 10～ 30min。
The preparation of a kind of organic solar batteries based on ZnO nano particulate cathodic cushion the most according to claim 6 Method, it is characterised in that: described thermal annealing and low-temperature bake mode use Thermostatic platform heating, baking oven for heating, Far-infrared Heating, One or more of Hot-blast Heating.
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107565029A (en) * 2017-08-30 2018-01-09 电子科技大学 A kind of organic solar batteries based on mixing ZnO cathode buffer layers and preparation method thereof
CN110459683A (en) * 2019-08-26 2019-11-15 电子科技大学 Organic solar batteries and preparation method based on the low attenuation characteristic of different ZnO nano particles
CN110504371A (en) * 2019-08-28 2019-11-26 电子科技大学 A kind of organic solar batteries and preparation method thereof of the centrifugation auxiliary photoactive layer layering based on spin coating proceeding
WO2020076150A1 (en) * 2018-10-08 2020-04-16 Lunar Progressive Sdn. Bhd. A coating composition and method of preparing thereof
CN111162173A (en) * 2019-12-30 2020-05-15 电子科技大学 Organic photoelectric detector with doped electron transport layer and preparation method thereof
CN111430547A (en) * 2020-03-19 2020-07-17 电子科技大学 Organic solar cell based on astaxanthin cathode buffer layer and preparation method thereof
CN113130781A (en) * 2019-12-31 2021-07-16 Tcl集团股份有限公司 Composite material, quantum dot light-emitting diode and preparation method thereof
CN113437224A (en) * 2021-06-09 2021-09-24 南方科技大学 Positive polymer solar cell based on double-layer cathode interface and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105255792A (en) * 2015-11-19 2016-01-20 广州秀明环保科技有限公司 Rapid biological deodorization composition and preparation method thereof
CN105405876A (en) * 2014-09-10 2016-03-16 夏普株式会社 Optical coupling bidirectional thyristor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105405876A (en) * 2014-09-10 2016-03-16 夏普株式会社 Optical coupling bidirectional thyristor element
CN105255792A (en) * 2015-11-19 2016-01-20 广州秀明环保科技有限公司 Rapid biological deodorization composition and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHIQIANG LIANG等: ""Effects of the Morphology of a ZnO Buffer Layer on the Photovoltaic Performance of Inverted Polymer Solar Cells"", 《ADVANCED FUNCTIONAL MATERIALS》 *

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CN107565029A (en) * 2017-08-30 2018-01-09 电子科技大学 A kind of organic solar batteries based on mixing ZnO cathode buffer layers and preparation method thereof
WO2020076150A1 (en) * 2018-10-08 2020-04-16 Lunar Progressive Sdn. Bhd. A coating composition and method of preparing thereof
CN110459683A (en) * 2019-08-26 2019-11-15 电子科技大学 Organic solar batteries and preparation method based on the low attenuation characteristic of different ZnO nano particles
CN110504371A (en) * 2019-08-28 2019-11-26 电子科技大学 A kind of organic solar batteries and preparation method thereof of the centrifugation auxiliary photoactive layer layering based on spin coating proceeding
CN111162173A (en) * 2019-12-30 2020-05-15 电子科技大学 Organic photoelectric detector with doped electron transport layer and preparation method thereof
CN113130781A (en) * 2019-12-31 2021-07-16 Tcl集团股份有限公司 Composite material, quantum dot light-emitting diode and preparation method thereof
CN113130781B (en) * 2019-12-31 2022-11-29 Tcl科技集团股份有限公司 Composite material, quantum dot light-emitting diode and preparation method thereof
CN111430547A (en) * 2020-03-19 2020-07-17 电子科技大学 Organic solar cell based on astaxanthin cathode buffer layer and preparation method thereof
CN111430547B (en) * 2020-03-19 2023-10-17 电子科技大学 Organic solar cell based on astaxanthin cathode buffer layer and preparation method thereof
CN113437224A (en) * 2021-06-09 2021-09-24 南方科技大学 Positive polymer solar cell based on double-layer cathode interface and preparation method thereof
CN113437224B (en) * 2021-06-09 2023-06-23 南方科技大学 Forward-installed polymer solar cell based on double-layer cathode interface and preparation method thereof

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