CN106025037A - 一种紫外发光二极管封装结构及其制作方法 - Google Patents
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- 239000010453 quartz Substances 0.000 description 5
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- 230000000694 effects Effects 0.000 description 3
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- 230000032683 aging Effects 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- 239000003822 epoxy resin Substances 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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Abstract
本发明公开了一种紫外发光二极管封装结构及其制作方法,包括:支架、LED芯片以及封装罩体,所述支架上形成有电路,所述LED芯片固定于支架上并与支架上的电路电性连接,其特征在于:所述封装罩体的下表面外围设置凹槽结构,并在所述凹槽结构中填充有机粘结胶;所述封装罩体设置于LED芯片之上,并通过有机粘结胶与所述支架相连接。
Description
技术领域
本发明涉及一种LED封装技术,特别涉及一种紫外发光二极管(LED)器件封装结构及其制作方法。
背景技术
发光二极管(英文简称LED),是一种固体半导体发光器件。随着LED 技术的发展,LED 的封装波段逐渐往近紫外甚至深紫外方向发展,而功率也往大功率方面发展。然而采用传统的封装,通常在LED芯片表面涂覆一层折射率较高的有机封装胶,而此类有机封装胶在长时间服役条件下,由于水、光、热等因素的影响容易失效,导致器件的光通量、辐射通量等的急剧衰减,甚至导致器件失效。对于大功率LED 集成光源来说,由于各种原因,如芯片发热、散热不足等情况,导致器件表面温度过高,进而导致器件失效。
目前UVLED主要集中在UVA和UVB波段,UVA波段为320~400nm,又称为长波黑斑效应紫外线。它有很强的穿透力,可以穿透大部分透明玻璃以及塑料;UVB波段为275~320nm,又称为中波红斑效应紫外线。中等穿透力,它的波长较短的部分会被透明玻璃吸收。针对紫外光各个波段的特性,针对不同波段采用不同的封装方式,如UVA中385nm以上波段的UVLED 主要是采用有机硅材料封装,385nm以下波段的UVB和UVC由于其高能量,对有机封装胶中的苯基等一些基团具有破坏作用,长期服役会存在可靠性问题。为提高低波段UVLED的使用寿命,有厂家都采用了玻璃等无机材料代替有机封装硅胶,但是基板和玻璃之间的粘结却成为问题。而采用AuSn共晶等封装形式,需要在玻璃和基板上镀金属,因此需要全新的机台和工艺,而且这种接触还存在热膨胀系数(英文简称CTE)不匹配的风险。
发明内容
本发明所要解决的技术问题是克服现有技术的不足,提供一种紫外发光二极管封装结构及其制作方法,延长封装器件使用寿命,提高可靠性。
为解决上述技术问题,根据本发明的第一方面,提供一种发光二极管封装结构,包括:支架、LED芯片以及封装罩体,所述支架上形成有电路,所述LED芯片固定于支架上并与支架上的电路电性连接,其特征在于:所述封装罩体的下表面外围设置凹槽结构,并在所述凹槽结构中填充有机粘结胶;所述封装罩体设置于LED芯片之上,并通过有机粘结胶与所述支架相连接。
优选地,所述凹槽结构至少开设一圈。
优选地,所述凹槽结构呈闭合状或者非闭合状。
优选地,所述凹槽结构表面设有反射层或者吸收层。
优选地,所述反射层为金属反射层或者非金属反射层。
优选地,所述封装罩体为透镜或盖板。
优选地,所述支架具有碗杯,所述碗杯环绕于所述LED芯片,所述凹槽结构位于所述碗杯顶部。
优选地,所述有机粘结胶形成于所述碗杯顶部与封装罩体之间。
优选地,所述支架为陶瓷支架或者塑胶支架。
根据本发明的第二方面,提供一种发光二极管封装结构的制作方法,包括以下步骤:
(1)提供一支架,并在所述支架上形成电路;
(2)提供一LED芯片,固定于所述支架上,并与支架上的电路电性连接;
(3)提供一透镜或盖板,并在所述透镜的下表面外围设置凹槽结构,以及在所述凹槽结构中填充有机粘结胶;
(4)所述透镜或盖板设置于LED芯片之上,并通过有机粘结胶与所述支架相连接。
优选地,在所述步骤(3)凹槽结构填充中填充有机粘结胶之前,在所述凹槽结构表面镀有反射层或者吸收层。
优选地,所述步骤(3)中凹槽结构至少开设一圈。
优选地,所述步骤(3)中凹槽结构呈闭合状或者非闭合状。
优选地,所述支架具有碗杯,所述碗杯环绕于所述LED芯片,所述凹槽结构位于所述碗杯顶部。
优选地,所述有机粘结胶形成于所述碗杯顶部与封装罩体之间。
优选地,所述支架为陶瓷支架或者塑胶支架。
与现有技术相比,本发明提供的一种紫外发光二极管封装结构及其制作方法,至少包括以下技术效果:(1)通过对UVLED封装结构的封装罩体设置凹槽结构并填充有机粘结胶层,避免有机粘结胶层或塑胶支架被紫外光(如UVC)照射到,从而延长使用寿命,提高封装器件的可靠性;(2)由于有机粘结胶层材料的杨氏模量较小,可以作为缓冲层释放应力,从而解决透镜/盖板与支架的热膨胀系数不匹配的问题。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1是实施例1的紫外LED封装结构示意图。
图2是图1中的具有凹槽结构的透镜示意图(填充有机粘结胶)。
图3是图1中的具有凹槽结构的透镜示意图(未填充有机粘结胶)。
图4是实施例2的紫外LED封装结构之具有凹槽结构的盖板示意图(填充有机粘结胶)。
图5是实施例2的紫外LED封装结构之具有凹槽结构的盖板示意图(未填充有机粘结胶)。
图中各标号表示如下:100:支架;101:碗杯;200:LED芯片;300:封装罩体;301:凹槽结构:302:有机粘结胶;303:反射层/吸收层。
具体实施方式
下面结合示意图对本发明的紫外LED封装结构制作方法进行详细的描述,在进一步介绍本发明之前,应当理解,由于可以对特定的实施例进行改造,因此,本发明并不限于下述的特定实施例。还应当理解,由于本发明的范围只由所附权利要求限定,因此所采用的实施例只是介绍性的,而不是限制性的。除非另有说明,否则这里所用的所有技术和科学用语与本领域的普通技术人员所普遍理解的意义相同。
实施例
1
如图1~3所示,本实施例提供一种紫外发光二极管封装结构,包括:支架100、倒装LED芯片200以及封装罩体300,支架100上形成有电路,LED芯片200固定于支架100上并与支架上的电路电性连接,封装罩体300的下表面外围设置圆环形的凹槽结构301,凹槽结构内表面设有反射层303,并在凹槽结构301中填充有机粘结胶302;封装罩体300设置于LED芯片200之上,并通过有机粘结胶302与支架100相连接。
支架100的材质可以选择陶瓷支架或者塑胶支架等,本实施例优选陶瓷支架。支架的形状优选具有碗杯101,碗杯101环绕于所述LED芯片200,凹槽结构301位于碗杯101顶部,有机粘结胶302位于碗杯101顶部与封装罩体300之间。
封装罩体300,可以选用透镜或者盖板,本实施例优选石英透镜作为封装罩体。
视紫外LED封装器件的服役环境,凹槽结构301可以开设一圈或多圈,其可以是闭合环状或者非闭合环状。如LED器件在环境恶劣的条件下服役,由于置于水中或者空气中含硫等较多, 凹槽结构优选设计成闭合环状,并填充有机粘结胶层(可以选用环氧树脂或硅树脂),如此有利于增强透镜与支架的封装密合性, 也可以开设多圈,避免单圈有某处结合不良的风险,增强可靠性;如LED器件在较高温环境下服役,凹槽结构优选设计具有部分开口,呈非闭合环状,可以利用空气对流来增加散热, 有利于提升封装结构的散热性。
凹槽结构内表面设有反射层或吸收层,其可以采用电镀或者蒸镀等镀膜工艺形成,反射层材质可以选用包括Ag或Al的金属反射层,也可以选用非金属反射层,如分布布拉格反射层(DBR),吸收层材质可以是金属或者电介质。由于石英透镜封装罩体300是透射率很好的材料,UV光有一定的几率可以通过透镜照射到有机粘结胶302上,而在凹槽结构301表面处设置反射层/吸收层303就避免了UV光照射到有机胶上而引起胶的老化,从而大大改善了紫外LED器件的可靠性。
本实施例的紫外发光二极管封装结构,可以采用如下工艺步骤形成:
(1)提供一具有碗杯101的支架100,并在支架上形成电路;
(2)将一倒装LED芯片200,固定于支架上,并与支架上的电路电性连接;
(3)提供一石英透镜作为封装罩体300,并在石英透镜的下表面外围设置凹槽结构301,然后在凹槽结构301内表面镀有反射层/吸收层303,接着在凹槽结构301中填充有机粘结胶302;
(4)将封装罩体300设置于LED芯片200之上,并通过有机粘结胶302与支架100相连接。
本发明通过对UVLED封装结构的封装罩体设置凹槽结构并填充有机粘结胶层,避免有机粘结胶层被紫外光(如UVC)照射到,从而延长使用寿命,提高UVLED封装器件的可靠性;此外,由于透镜和支架的热膨胀系数不同,如石英玻璃为0.5ppm/K,陶瓷支架为6ppm/K,在器件服役时由于温度升高可能导致盖板受张应力被拉裂。而采用有机粘结胶层材料的杨氏模量较小,可以作为缓冲层释放应力,从而解决封装罩体与支架的热膨胀系数不匹配的问题。
实施例
2
如图4和5所示,本实施例与实施例1区别在于:实施例1的封装罩体300采用石英透镜,而本实施的封装罩体300采用玻璃盖板;实施例1的凹槽结构301呈圆环形,本实施例的凹槽结构301呈方形且位于玻璃盖板的外边缘。该结构的设计优点在于:由于开设凹槽结构的位置最大程度地远离紫外LED光源,因此可以进一步避免可能的UV照射造成的有机粘结胶老化而影响器件的可靠性。
应当理解的是,上述具体实施方案仅为本发明的部分优选实施例,以上实施例还可以进行各种组合、变形。本发明的范围不限于以上实施例,凡依本发明所做的任何变更,皆属本发明的保护范围之内。
Claims (10)
1.一种发光二极管封装结构,包括:支架、LED芯片以及封装罩体,所述支架上形成有电路,所述LED芯片固定于支架上并与支架上的电路电性连接,其特征在于:所述封装罩体的下表面外围设置凹槽结构,并在所述凹槽结构中填充有机粘结胶;所述封装罩体设置于LED芯片之上,并通过有机粘结胶与所述支架相连接。
2.根据权利要求1所述的一种发光二极管封装结构,其特征在于:所述凹槽结构至少开设一圈。
3.根据权利要求1所述的一种发光二极管封装结构,其特征在于:所述凹槽结构表面设有反射层或吸收层。
4.根据权利要求1所述的一种发光二极管封装结构,其特征在于:所述封装罩体为透镜或盖板。
5.根据权利要求1所述的一种发光二极管封装结构,其特征在于:所述支架具有碗杯,所述碗杯环绕于所述LED芯片,所述凹槽结构位于所述碗杯顶部。
6.根据权利要求1所述的一种发光二极管封装结构,其特征在于:所述支架为陶瓷支架或者塑胶支架。
7.一种发光二极管封装结构的制作方法,包括工艺步骤:
(1)提供一支架,并在所述支架上形成电路;
(2)提供一LED芯片,固定于所述支架上,并与支架上的电路电性连接;
(3)提供一封装罩体,并在所述封装罩体的下表面外围设置凹槽结构,以及在所述凹槽结构中填充有机粘结胶;
(4)所述封装罩体设置于LED芯片之上,并通过有机粘结胶与所述支架相连接。
8.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:在所述步骤(3)凹槽结构中填充有机粘结胶之前,在所述凹槽结构表面镀有反射层或吸收层。
9.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:所述步骤(3)中凹槽结构至少开设一圈。
10.根据权利要求7所述的一种发光二极管封装结构的制作方法,其特征在于:所述支架具有碗杯,所述碗杯环绕于所述LED芯片,所述凹槽结构位于所述碗杯顶部。
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