CN106025035A - Multi-layer plate heterostructure for improving the luminous efficiency of white LED - Google Patents
Multi-layer plate heterostructure for improving the luminous efficiency of white LED Download PDFInfo
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- CN106025035A CN106025035A CN201610535342.2A CN201610535342A CN106025035A CN 106025035 A CN106025035 A CN 106025035A CN 201610535342 A CN201610535342 A CN 201610535342A CN 106025035 A CN106025035 A CN 106025035A
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- luminous efficiency
- heterostructure
- white light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention relates to the field of LED luminescence, more particularly, to a multi-layer plate heterostructure for improving the luminous efficiency of white LED. The structure comprises a substrate and a multi-layer plate heterostructure in connection to the substrate; the multilayer plate heterostructure is formed by two different materials that are alternately superimposed over a plurality of cycles. The invention has a simple structure. The high reflection in the purple band and the large field intensity distribution in the surface layer can better help purple light to stimulate fluorescent substances; and the high reflection in the blue, green and red bands is conducive to better extract fluorescence, therefore enhancing the luminous efficiency of LED.
Description
Technical field
The present invention relates to LED illumination field, a kind of multi-layer planar hetero-junctions improving white light LEDs luminous efficiency
Structure.
Background technology
White light LEDs penetrates into every field as a kind of important light-emitting component, its application, such as illumination, display
Etc..The mechanism producing white light mainly has two kinds, and one is polymorphic, i.e. uses 2 color LED of two or more complementation
Light emitting diode or 3 primary colors LED light emitting diodes are done mixed light and forms white light.Polymorphic is used to produce the mode of white light,
Because the driving voltage of the LED light emitting diode of different colors, luminous output, temperature characterisitic and life-span are different, therefore
Producing white light in the mode using polymorphic LED light emitting diode, the mode producing white light than monocrystalline type LED is complicated, also because of LED
The quantity of light emitting diode is many, and the cost also making polymorphic LED is the highest；Another kind is monocrystalline type, and i.e. one monochromatic
LED light emitting diode adds corresponding fluorescent material, uses monocrystalline type, as long as with a kind of monochromatic LED light emitting diode, driving
Design on galvanic electricity road can be relatively easy to.Generally using two ways, a kind of mode is that blue-ray LED light emitting diode excites Huang
Color fluorescent material produces white light, and another way is that ultraviolet leds excites RGB tri-wavelength fluorescent powder to produce white light.But with blue
The luminous efficiency of the mode that light LED carrys out excited white light is the most not enough, so starting to another one direction is exactly toward ultraviolet leds
Developing, utilize ultraviolet leds to add RGB tri-wavelength fluorescent powder to reach the effect of white light, its luminous efficiency is more a lot of than blue light.
Quantum dot has narrow emission peak, the characteristic such as glow color is adjustable, thermoelectrical stability and high fluorescence efficiency, because of
This quantum dot has the advantage of uniqueness as the fluorescent material in luminescent device.It addition, the multi-layer planar being made up of dielectric material
Heterojunction structure reflecting plate is compared with solid metal reflector, it is possible to reduce light loss, it is to avoid produce Kelvin effect and surface heat deformation etc..
Along with the highest business demand, the luminous efficiency of white light LEDs is also required to improve further.2006,
C. H. Lin et al. is it is proposed that TiO2/SiO2The reflector of multiple-level stack strengthens InGaN-GaN Indium-Tin-Oxide
The luminescence of diode, but just for arrowband emission wavelength；2013, H. Li et al. proposed more complicated multilayer optical knot
Structure obtains broad-band gap, but, their layer of design is more, and structure is complicated, and preparation cost is high, is unfavorable for system
Standby.
Summary of the invention
The technical problem to be solved is: the white light how making LED structure send is utilized to a greater extent.
The technical solution adopted in the present invention is: a kind of multi-layer planar heterojunction structure improving white light LEDs luminous efficiency, bag
Including substrate and be connected to suprabasil multi-layer planar heterojunction structure, multi-layer planar heterojunction structure has two different materials to replace superposition
Multiple cycles form.
As a kind of optimal way: base material is silicon dioxide, is titanium dioxide with the first material of substrate contact, the
Two materials are silicon dioxide.
As a kind of optimal way: with the thickness d of the titanium dioxide layer of substrate contact2For 40-54 nanometer, cover with base
Silicon dioxide layer thickness d on the titanium dioxide layer of end contact1It is 915 nanometers, with titanium dioxide layer and the covering of substrate contact
The period 1 is being constituted with the silicon dioxide layer on the titanium dioxide layer of substrate.
As a kind of optimal way, it is characterised in that: multi-layer planar heterojunction structure is replaced by titanium dioxide and silicon dioxide
5 cycles of superposition form.
As a kind of optimal way, the thickness in each cycle is 0.618 times of its previous cycle respective material thickness.
When according to 0.618 times the most rudimentary time, it is possible to realize the luminous efficiency that white light range is extra, as long as and the number of plies that needs same
5 layers just can meet requirement, save material, and more in hgher efficiency than the cycle layer of condition of equivalent thickness, it is possible to thoroughly strengthen 7 kinds
The wide-spectrum white-light efficiency that color is compound.
The invention has the beneficial effects as follows: present configuration is simple, the high reflection of purple wave band and big at surface layer
Field strength distribution beneficially purple light preferably excites fluorescent material, blue, green and red band high reflection to be conducive to more preferably
Ground extracts fluorescence, strengthens the luminous efficiency of LED；Having obvious enhanced intensity effect, electric-field enhancing is concentrated mainly on structural table
Surface layer, the position that fluorescent material is placed on enhanced intensity can further improve luminous efficiency.This structure is at the first material and
When the thickness of two materials changes, each high reflectance zone can move, and is therefore adjusted merely by the thickness of bi-material, the most permissible
Trickle regulation reflected waveband.Increase titanium dioxide and/or the thickness of silicon dioxide layer, more kinds of different luminous ripple can be strengthened
The luminous intensity of long material, is advantageously implemented the wide-spectrum white-light that 7 kinds of colors are compound.Excitation light power of the present invention and fluorescence radiation
Power is all improved in time domain and frequency domain.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the structure of the present invention.
Fig. 2 is in 0.3 ~ 0.7 μ m, SiO2And TiO2Refractive index.
Fig. 3 is SiO2/TiO2Cycle is the reflectance comparison diagram of 1 ~ 5.
Fig. 4 is to work as d1When 0.1 m ~ 2.0 m change, the reflectance of structure under the conditions of vertical incidence.
Fig. 5 is to work as d2When 0 m ~ 0.9 m change, the reflectance of structure under the conditions of vertical incidence.
Fig. 6 is when each periodic thickness equal proportion is increased to K times original (0.2 < K < 5), ties under the conditions of vertical incidence
The reflectance spectrum of structure.
Fig. 7 is when each periodic thickness equal proportion is increased to K times original (0.2 < K < 5), ties under the conditions of vertical incidence
The transmission spectrum of structure.
Fig. 8 is when each periodic thickness equal proportion is increased to K times original (0.2 < K < 5), ties under the conditions of vertical incidence
The absorption spectra of structure.
Fig. 9 is present configuration distribution map of the electric field at wavelength 400nm.
Figure 10 is present configuration distribution map of the electric field at wavelength 455nm.
Figure 11 is present configuration distribution map of the electric field at wavelength 520nm.
Figure 12 is present configuration distribution map of the electric field at wavelength 620nm.
Figure 13 is present configuration and SiO2Structure is at the frequency domain power comparison diagram of excitation wavelength 400nm.
Figure 14 is present configuration and SiO2Structure is at the time-domain power comparison diagram of excitation wavelength 400nm.
Figure 15 is present configuration (luminescent substance is at the 100nm of distance structure surface) and SiO2Structure is at wavelength
The frequency domain power comparison diagram of 455nm.
Figure 16 is present configuration (luminescent substance is at the 100nm of distance structure surface) and SiO2Structure is at wavelength
The time-domain power comparison diagram of 455nm.
Figure 17 is present configuration (luminescent substance in structure at the 50nm of surface) and SiO2Structure is wavelength 455nm's
Frequency domain power comparison diagram
Figure 18 is present configuration (luminescent substance in structure at the 50nm of surface) and SiO2Structure is in the time domain of wavelength 455nm
Power contrast schemes
Figure 19 be present configuration incident angle from 0 ° ~ 80 ° changes time, the reflectance of structure under p-polarization.
Figure 20 be present configuration incident angle from 0 ° ~ 80 ° changes time, the reflectance of the lower structure of s polarization.
Figure 21 is to work as d2When 40nm ~ 60nm changes, the reflectance of present configuration under the conditions of vertical incidence.
Detailed description of the invention
For making the purpose of the present invention, technical scheme and effect clearer, below in conjunction with accompanying drawing and specific embodiment
The detailed description of the invention of the present invention is made and illustrates further.
We have proposed a kind of multi-layer planar structure being made up of dissimilar materials.This structure has in the high reflection of purple wave band
Beneficially purple LED preferably excites fluorescent material, and blue, green and red band high reflection is beneficially preferably extracted glimmering
Light, and then strengthen the luminous efficiency of LED.
A kind of multi-layer planar heterojunction structure improving white light LEDs luminous efficiency provided by the present invention, as it is shown in figure 1, include
Two kinds of nonmetallic materials, its composition is: described multi-layer planar heterojunction structure is to be combined by multi-layer planar heterojunction structure and substrate
And constitute；Described multi-layer planar heterojunction structure is to be made up of, Qi Zhong nonmetallic materials 1 and material 2 alternately arranged N number of cycle
In one cycle, the thickness of material 1 is d2, material 2 thickness is d1。
Wherein, substrate of the present invention is SiO2.Described material 1 is TiO2, material 2 is SiO2.Described N=5.Described material
The thickness of 1: 40nm≤d2≤54nm.The thickness of described material 2: d1=915nm.
Fig. 1 is the schematic diagram of the structure of the present invention, including two kinds of nonmetallic materials.At SiO2In substrate, TiO2And SiO2In
Periodic arrangement.
By two kinds of nonmetallic materials TiO in composite construction of the present invention2And SiO2Including inherent loss is also contemplated for, TiO2With
SiO2Complicated refractive index is as shown in Figure 2.
Accompanying drawing 3 be present configuration under the conditions of vertical incidence, TiO under p-polarization2/SiO2Periodicity N from 1 increase to 5 time,
Wavelength 0.3 μm is to the structure reflectance in 0.7 μ m.When periodicity is gradually increased, in 0.3 ~ 0.7 whole wave band of μm
Reflectance be also gradually increased, as N=5, the reflectance of each zone of reflections is close to 100%, and respectively corresponding purple, blueness, green
Red four wave bands of normal complexion.Further, as N=5, the result of finite time-domain calculus of finite differences and rigorous couple-wave analysis method mutually obtains
Checking.
Accompanying drawing 4, accompanying drawing 5 are that respectively under the conditions of vertical incidence, present configuration is at d1From 0.1 m ~ 2.0 m change and d2
When 0 m ~ 0.9 m change, the reflectivity distribution of structure.Can draw, by adjusting d1And d2, we can adjust easily
Each zone of reflections wave band.Along with d1Or d2The increase of thickness, the number of the zone of reflections increases.
Accompanying drawing 6 is when each periodic thickness equal proportion is increased to K times original (0.2 < K < 5) to accompanying drawing 8, vertically enters
The reflectance spectrum of structure, transmission spectrum and absorption spectra under the conditions of penetrating.Can be seen that transmission spectrum and reflectance spectrum have after 400nm contrary strong
Weak distribution, but in 350-400nm scope, it is basically unchanged with the increase of K, and this is very big, so 350-400nm is anti-owing to absorbing
Penetrate the least with transmission.Along with the increase of K, the number of the zone of reflections increases.When 0.2 < K < when 1.2, along with K increases, for wavelength
Reflection band in 350nm ~ 580nm, occurs in that red shift, can strengthen the reflection of HONGGUANG in LED；For wavelength 600nm ~
For the zone of reflections of 650nm, along with K becomes big, the center of the zone of reflections is basically unchanged.When 1.2 < K is < when 5, along with K increases, right
In wavelength reflection band in 350nm ~ 600nm, occur in that red shift；In short wave ranges position, the zone of reflections number of appearance increases
Many, so LED intermediate waves length luminescence can be strengthened；And wavelength is basically unchanged in the reflection band position of about 625nm, bandwidth is also
Minor variations；And when 650nm ~ 700nm, along with K increases, zone of reflections position occurs that blue-shifted phenomenon, bandwidth are basically unchanged.
Accompanying drawing 9 to accompanying drawing 12 for present configuration by the wavelength that RCWA calculates be 400nm, 455nm, 520nm and
Distribution map of the electric field during 620nm, in order to be more fully understood that the mechanism of light influx and translocation.Here, we with p-polarization vertical incidence are
Example.It can be seen that field strength distribution gradually strengthens from bottom to surface layer, so luminescent substance can be placed on surface layer by us
Or in embedding surface layer, to strengthen the luminous intensity of luminescent substance.Further, the result of field strength distribution obtains also by FDTD
Checking.
When Figure 13, Figure 14 are respectively the pulse incidence with a 400nm, Fig. 1 structure and SiO2The frequency domain of structure and time domain
Power contrast figure.It can be seen that no matter under frequency domain or time domain, the power of present configuration is all than SiO2The power of structure
Greatly.
Figure 15, Figure 16 are respectively when luminescent substance is at the 100nm of distance structure surface, Fig. 1 structure and SiO2Knot
Structure frequency domain at 455nm and the luminous power comparison diagram of time domain.Figure 17, Figure 18 be respectively in the luminescent substance embedded structure away from
Time at the 50nm of surface, Fig. 1 structure and SiO2Structure frequency domain at 455nm and the luminous power comparison diagram of time domain.It can be seen that
No matter being also located in above body structure surface in luminescent substance embedded structure, present configuration is at frequency domain and the luminous power of time domain
All than SiO2The luminous power of structure is big.
Figure 19, Figure 20 are respectively incident angle from 0 ° ~ 80 ° time, p-polarization and the reflectivity distribution of the lower Fig. 1 structure of s polarization.
It will be seen that when incident angle is in the range of 0 ° ~ 20 °, zone of reflections distribution is basically unchanged, but when incident angle is more than 20 °, reflection
Band there occurs blue shift.
Figure 21 allows in actual experiment preparation process, for the TiO of thinner thickness2Thickness error, we research
Work as d2When 40nm changes to 54nm, each zone of reflections is not changed in substantially, therefore draws, experiment preparation is reduced by this structure
Difficulty, is more easy to realize.
Above example fully demonstrates a kind of multi-layer planar structure being made up of dissimilar materials of the present invention, is conducive to purple
Light LED preferably excites fluorescent material, blue, green and red band high reflection to be conducive to preferably extracting fluorescence, with
Strengthen the luminous efficiency of white light LEDs.
Particular embodiments described above, has been carried out further the purpose of the present invention, technical scheme and beneficial effect
Illustrate, be it should be understood that the specific embodiment that the foregoing is only the present invention, be not limited to the present invention, all
On the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. done, should be included in the protection of the present invention
Within the scope of.
Claims (4)
1. the multi-layer planar heterojunction structure improving white light LEDs luminous efficiency, it is characterised in that: include substrate and be connected to base
Multi-layer planar heterojunction structure at the end, multi-layer planar heterojunction structure was formed by two different materials alternately superposition multiple cycle.
A kind of multi-layer planar heterojunction structure improving white light LEDs luminous efficiency the most according to claim 1, its feature exists
In: base material is silicon dioxide, is titanium dioxide with the first material of substrate contact, and the second material is silicon dioxide.
A kind of multi-layer planar heterojunction structure improving white light LEDs luminous efficiency the most according to claim 2, its feature exists
In: with the thickness d of the titanium dioxide layer of substrate contact2For 40-54 nanometer, cover with on the titanium dioxide layer of substrate contact
Silicon dioxide layer thickness d1It is 915 nanometers, with the titanium dioxide layer of substrate contact and covering at the titanium dioxide with substrate contact
Silicon dioxide layer on layer constitutes the period 1.
A kind of multi-layer planar heterojunction structure improving white light LEDs luminous efficiency the most according to claim 3, its feature exists
In: multi-layer planar heterojunction structure was formed by titanium dioxide and silicon dioxide alternately 5 cycles of superposition.
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2016
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Patent Citations (8)
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| CN1700832A (en) * | 2004-05-19 | 2005-11-23 | 洲磊科技股份有限公司 | Light-emitting component structure capable of improving light-emitting effect |
| US20090146168A1 (en) * | 2006-04-21 | 2009-06-11 | Wavenics Inc. | High efficiency led with multi-layer reflector structure and method for fabricating the same |
| CN201112409Y (en) * | 2007-08-06 | 2008-09-10 | 中华映管股份有限公司 | Light-emitting diode chip, side injection type backlight die set and directly-down backlight die set |
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