CN106025014A - LED epitaxial wafer with current blocking layer and manufacturing method thereof - Google Patents

LED epitaxial wafer with current blocking layer and manufacturing method thereof Download PDF

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Publication number
CN106025014A
CN106025014A CN201610606427.5A CN201610606427A CN106025014A CN 106025014 A CN106025014 A CN 106025014A CN 201610606427 A CN201610606427 A CN 201610606427A CN 106025014 A CN106025014 A CN 106025014A
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layer
barrier layer
current barrier
substrate
led
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CN201610606427.5A
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CN106025014B (en
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王汉清
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Nantong one choice Industrial Design Co., Ltd.
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王汉清
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

The invention provides an LED epitaxial wafer with a current blocking layer. The LED epitaxial wafer comprises a substrate. A GaN epitaxial layer is epitaxially grown on the substrate. Dry method etching is used to etch a first electrode placing area which is in the shape of a ladder. A current barrier layer is formed on the non-etched area of the GaN epitaxial layer. Concentric ITO conductive rings are uniformly spaced in the current barrier layer. The top surfaces of the conductive rings are level with the top surface of the current barrier layer. An ITO current expansion layer is deposited on the current barrier layer. According to the invention, the concentric conductive rings are used to transfer current, and the excessive concentration of the current in the middle of an electrode is prevented.

Description

A kind of LED with current barrier layer and manufacture method thereof
Technical field
The present invention relates to semiconductor light emitting field, be specifically related to a kind of LED with current barrier layer and system thereof Make method.
Background technology
The semiconductor light-emitting elements used at present is mainly LED(light emitting diode), LED is usually and directly exists Electric current expands the growth electrode immediately above of layer, and at this moment, owing to the position of electrode is limited to, electric current will be largely focused on electrode Lower section, causes base part peripheral location not have electric current, the concentrations of this electric current can produce substantial amounts of heat, ultimately result in The inefficacy of LED.
Summary of the invention
Based on the problem solved in above-mentioned encapsulation, the invention provides a kind of LED with current barrier layer Manufacture method, specifically includes following steps:
(1) substrate is provided, grows GaN epitaxial layer over the substrate, then utilize dry etching to etch the first electrode and put Putting region, described placement region is stepped；
(2) the non-etch areas in described GaN epitaxial layer forms a photoresist layer；
(3) etch described photoresist layer, form a series of donut, in donut, fill ITO to form conducting ring；
(4) described photoresist layer is removed；The lamination of SiO2 and TiO2 is deposited to form current blocking around described conducting ring Layer, polishing end face makes the end face of described conducting ring flush with the end face of described current barrier layer；
(5) on described current barrier layer, deposit one layer of ITO electric current and expand layer；Thinning described substrate, and form one layer overleaf Bragg reflection film, to strengthen reflection；The making of LED is completed to this.
Wherein, the center superposition of the non-etch areas of the center of described conducting ring and described GaN epitaxial layer, and adjacent The interval of two described conducting rings is equal, but the width of described conducting ring is gradually increased from inside to outside, is the equal difference of 3 μm in equal difference Ordered series of numbers arranges, and wherein the width of the conducting ring of innermost circle is 1 μm；.
Wherein, alternating growth thickness is the SiO2 of λ/4n1 and thickness is the TiO2 of λ/4n2, and growth cycle is 2-10, its Middle n1 is the refractive index of SiO2, and n2 is the refractive index of TiO2, and λ is the emission wavelength of this epitaxial wafer.
Wherein, described substrate is Sapphire Substrate.
Wherein, growth GaN epitaxial layer specifically includes over the substrate: on substrate, N-type GaN of silicon is mixed in growth successively Layer, multiple quantum well light emitting layer, mix the p-type GaN layer of magnesium.
Present invention also offers a kind of LED with current barrier layer, comprising:
Substrate；
Epitaxial growth GaN epitaxial layer over the substrate over the substrate, utilizes the first electrode that dry etching etches Placing region, described placement region is stepped；
It is formed at the current barrier layer not being etched on region of described GaN epitaxial layer；
In described current barrier layer, uniform intervals has concentric ITO conducting ring, the end face of described conducting ring and described current blocking The end face of layer flushes；
The ITO electric current being deposited on described current barrier layer expands layer.
Wherein, the width of described conducting ring is gradually increased from inside to outside, is the arithmetic progression arrangement of 3 μm in equal difference, wherein The width of the conducting ring of innermost circle is 1 μm.
Wherein, the bragg reflection film that substrate back is formed it is additionally included in.
Advantages of the present invention is as follows:
(1) present invention utilizes concentric conducting ring to carry out electric current transmission, prevents electric current in the concentrations at the middle part of electrode；
(2) SiO2 that alternating growth thickness is λ/4n1 and the TiO2 that thickness is λ/4n2 is utilized to add strong reflection.
Accompanying drawing explanation
Fig. 1-7 is the manufacture method flow chart of the LED with current barrier layer of the present invention；
Fig. 8 is the structure chart after epitaxial wafer arranges electrode.
Detailed description of the invention
See Fig. 1-8, present invention firstly provides the manufacture method of a kind of LED with current barrier layer, tool Body comprises the steps:
Seeing Fig. 1, it is provided that a substrate 1, described substrate 1 is Sapphire Substrate；
See Fig. 2, described substrate 1 grows GaN epitaxial layer 2: the N-type GaN layer of silicon, volume are mixed in growth the most successively Sub-trap luminescent layer, mixes the p-type GaN layer of magnesium；Then utilize dry etching to etch the first electrode and place region 3, described rest area Territory is stepped；
Seeing Fig. 3, the non-etch areas in described GaN epitaxial layer 2 forms a photoresist layer 4；
See Fig. 4, etch described photoresist layer 4, form a series of donut；ITO is filled to be formed in donut The center superposition of conducting ring 5, the center of described conducting ring 5 and the non-etch areas of described GaN epitaxial layer, and adjacent two The interval of described conducting ring 5 is equal, but the width of described conducting ring 5 is gradually increased from inside to outside, is the difference such as grade of 3 μm in equal difference Row arrangement, wherein the width of the conducting ring of innermost circle is 1 μm；
See Fig. 5, remove described photoresist layer 4；
See Fig. 6 a, deposition SiO around described conducting ring 52And TiO2To form current barrier layer 6, alternating growth thickness SiO for λ/4n12It is the TiO of λ/4n2 with thickness2, growth cycle is 2-10, and wherein n1 is the refractive index of SiO2, and n2 is The refractive index of TiO2, λ is the emission wavelength of this epitaxial wafer；Polishing end face makes the end face of described conducting ring 5 hinder with described electric current The end face of barrier 6 flushes；Fig. 6 b shows the top view of Fig. 6 a；
See Fig. 7, described current barrier layer 6 deposits one layer of ITO electric current and expands layer 7；Thinning described substrate 1, and overleaf Form one layer of bragg reflection film 8, to strengthen reflection；The making of LED is completed to this
See Fig. 8, when above-mentioned epitaxial wafer is fabricated to LED chip, only need in the non-etch areas of described GaN epitaxial layer 2 and Etch areas forms electrode 9,10 respectively, wherein in the non-etch areas of the center of electrode 10 and described GaN epitaxial layer 2 The heart is overlapping.
It is last that it is noted that obviously above-described embodiment is only for clearly demonstrating example of the present invention, and also The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description Go out change or the variation of other multi-form.Here without also cannot all of embodiment be given exhaustive.And thus drawn What Shen went out obviously changes or changes among still in protection scope of the present invention.

Claims (8)

1. there is a manufacture method for the LED of current barrier layer, specifically include following steps:
(1) substrate is provided, grows GaN epitaxial layer over the substrate, then utilize dry etching to etch the first electrode and put Putting region, described placement region is stepped；
(2) the non-etch areas in described GaN epitaxial layer forms a photoresist layer；
(3) etch described photoresist layer, form a series of donut, in donut, fill ITO to form conducting ring；
(4) described photoresist layer is removed；The lamination of SiO2 and TiO2 is deposited to form current blocking around described conducting ring Layer, polishing end face makes the end face of described conducting ring flush with the end face of described current barrier layer；
(5) on described current barrier layer, deposit one layer of ITO electric current and expand layer；Thinning described substrate, and form one layer overleaf Bragg reflection film, to strengthen reflection；The making of LED is completed to this.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that:, described The center superposition of the non-etch areas of the center of conducting ring and described GaN epitaxial layer, and two adjacent described conducting rings It is spaced equal, but the width of described conducting ring is gradually increased from inside to outside, be the arithmetic progression arrangement of 3 μm in equal difference, The width of the conducting ring of inner ring is 1 μm.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: alternately Growth thickness is the SiO2 of λ/4n1 and thickness is the TiO2 of λ/4n2, and growth cycle is 2-10, and wherein n1 is the refraction of SiO2 Rate, n2 is the refractive index of TiO2, and λ is the emission wavelength of this epitaxial wafer.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: described Substrate is Sapphire Substrate.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: in institute State Grown GaN epitaxial layer to specifically include: on substrate, the N-type GaN layer of silicon is mixed in growth successively, multiple quantum well light emitting layer, Mix the p-type GaN layer of magnesium.
6. there is a LED for current barrier layer, comprising:
Substrate；
Epitaxial growth GaN epitaxial layer over the substrate over the substrate, utilizes the first electrode that dry etching etches Placing region, described placement region is stepped；
It is formed at the current barrier layer not being etched on region of described GaN epitaxial layer；
In described current barrier layer, uniform intervals has concentric ITO conducting ring, the end face of described conducting ring and described current blocking The end face of layer flushes；
The ITO electric current being deposited on described current barrier layer expands layer.
The LED with current barrier layer the most according to claim 6, it is characterised in that: the width of described conducting ring Degree is gradually increased from inside to outside, is the arithmetic progression arrangement of 3 μm in equal difference, and wherein the width of the conducting ring of innermost circle is 1 μm.
The LED with current barrier layer the most according to claim 6, it is characterised in that: it is additionally included in the substrate back of the body The bragg reflection film that face is formed.
CN201610606427.5A 2016-07-29 2016-07-29 A kind of LED epitaxial wafer and its manufacturing method with current barrier layer Active CN106025014B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107302184A (en) * 2017-06-30 2017-10-27 中国科学院长春光学精密机械与物理研究所 A kind of semiconductor laser and preparation method and equipment
CN108231961A (en) * 2018-01-30 2018-06-29 厦门乾照光电股份有限公司 A kind of production method of LED chip structure
CN116169215A (en) * 2023-04-24 2023-05-26 江西兆驰半导体有限公司 Current blocking layer, preparation method thereof and LED chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790753A (en) * 2004-12-15 2006-06-21 上海蓝光科技有限公司 Light-emitting diode and method of preparing the same
JP2007027540A (en) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device and illuminator using same
KR100809508B1 (en) * 2006-11-06 2008-04-01 서울옵토디바이스주식회사 Light emitting device having plane fresnel lens and fabrication method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790753A (en) * 2004-12-15 2006-06-21 上海蓝光科技有限公司 Light-emitting diode and method of preparing the same
JP2007027540A (en) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device and illuminator using same
KR100809508B1 (en) * 2006-11-06 2008-04-01 서울옵토디바이스주식회사 Light emitting device having plane fresnel lens and fabrication method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107302184A (en) * 2017-06-30 2017-10-27 中国科学院长春光学精密机械与物理研究所 A kind of semiconductor laser and preparation method and equipment
CN107302184B (en) * 2017-06-30 2019-07-19 中国科学院长春光学精密机械与物理研究所 A kind of semiconductor laser and production method and equipment
CN108231961A (en) * 2018-01-30 2018-06-29 厦门乾照光电股份有限公司 A kind of production method of LED chip structure
CN108231961B (en) * 2018-01-30 2019-05-14 厦门乾照光电股份有限公司 A kind of production method of LED chip structure
CN116169215A (en) * 2023-04-24 2023-05-26 江西兆驰半导体有限公司 Current blocking layer, preparation method thereof and LED chip
CN116169215B (en) * 2023-04-24 2023-07-18 江西兆驰半导体有限公司 Current blocking layer, preparation method thereof and LED chip

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Effective date of registration: 20180426

Address after: 226600 9 Li Fa FA Road, Chengdong Town, Haian Development Zone, Nantong, Jiangsu.

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Address before: 226600 9 Li Fa FA Road, Chengdong Town, Haian Development Zone, Nantong, Jiangsu.

Patentee before: Jiangsu painuo photoelectric Polytron Technologies Inc