CN1060234C - High-temperature heat treatment method for mercury cadmium telluride material - Google Patents
High-temperature heat treatment method for mercury cadmium telluride material Download PDFInfo
- Publication number
- CN1060234C CN1060234C CN97106663A CN97106663A CN1060234C CN 1060234 C CN1060234 C CN 1060234C CN 97106663 A CN97106663 A CN 97106663A CN 97106663 A CN97106663 A CN 97106663A CN 1060234 C CN1060234 C CN 1060234C
- Authority
- CN
- China
- Prior art keywords
- heat treatment
- source
- mercury
- tellurium
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 title claims abstract description 44
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 25
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000003708 ampul Substances 0.000 claims abstract description 14
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 13
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052753 mercury Inorganic materials 0.000 claims description 22
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000002019 doping agent Substances 0.000 abstract description 4
- 230000004913 activation Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 238000012876 topography Methods 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910004262 HgTe Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
一种碲镉汞材料高温热处理方法，热处理在石英安瓿中完成，热处理源为含碲汞源，安瓿内加保护性气体，利用碲源在热处理系统中提供的碲分压和保护性气体有效地抑制了碲镉汞材料表面原子的绝对蒸发量，用该方法对碲镉汞材料进行高温热处理后，碲镉汞材料的位错下降了将近一个数量级，同时，材料表面形貌的完整性得到了很好的保持。该方法也适合于碲镉汞材料中掺杂原子在高温下的电性激活。A high-temperature heat treatment method for mercury cadmium telluride material. The heat treatment is completed in a quartz ampoule, the heat treatment source is a source containing mercury tellurium, and a protective gas is added in the ampoule, and the tellurium partial pressure and protective gas provided by the tellurium source in the heat treatment system are used to effectively The absolute evaporation of atoms on the surface of the HgCdTe material is suppressed. After the high-temperature heat treatment of the HgCdTe material is carried out by this method, the dislocation of the HgCdTe material is reduced by nearly an order of magnitude. At the same time, the integrity of the surface morphology of the material is improved. Very well maintained. The method is also suitable for electrical activation of dopant atoms in HgCdTe materials at high temperature.
Description
本发明涉及单晶或具有一定结构的均匀多晶材料之后处理，特别是用于降低碲隔汞半导体材料位错密度的高温热处理方法，该方法也适用于碲镉汞材料中掺杂原子电性的激活。The present invention relates to post-treatment of single crystal or homogeneous polycrystalline material with a certain structure, especially a high-temperature heat treatment method for reducing the dislocation density of mercury-cadmium-telluride semiconductor materials. activation.
在航天和航空遥感、军用光电子对抗技术、信息技术及工业测温等领域中，红外探测器有着广泛的应用。随着红外焦平面探测技术的发展，大面积碲隔汞(HgCdTe)薄膜材料在制备红外探测器中已得到了大量的使用，如何提高材料的质量来满足红外焦平面器件的要求是该技术领域中的一个关键环节。In the fields of aerospace and aviation remote sensing, military optoelectronic countermeasures technology, information technology and industrial temperature measurement, infrared detectors have a wide range of applications. With the development of infrared focal plane detection technology, large-area mercury tellurium barrier (HgCdTe) thin film materials have been widely used in the preparation of infrared detectors. How to improve the quality of materials to meet the requirements of infrared focal plane devices is a technical field. a key link in the.
大面积碲隔汞薄膜材料是用外延技术在一定的衬底材料上制备而成的，由于衬底与碲镉汞外延层之间的晶格失配，外延材料中会存在位错缺陷，降低失配位错密度一般需要通过高温热处理工艺。另外，目前正在研究和开发的P-on-N结构的红外焦平面器件，也要求用高温热处理来激活离子注入掺入的砷原子，即将注入的砷原子送入碲原子的晶格位置，使其成受主型掺杂原子。目前，国外在碲镉汞高温热处理均采用高压型的热处理装置，如：J．M．Arias，et．atJ．Vac．Sci．TechnolB9(3)，1646(1991)，C．C．Wang et．alJ．Electrochem．Soc．127(8)，175(1980)，和传统的用石英安瓿进行的汞源热处理工艺相比，高压型设备要求提高了很多。Large-area HgTe barrier film material is prepared on a certain substrate material by epitaxial technology. Due to the lattice mismatch between the substrate and the HgCdTe epitaxial layer, there will be dislocation defects in the epitaxial material, reducing the Misfit dislocation density generally requires a high temperature heat treatment process. In addition, the infrared focal plane device with P-on-N structure that is currently being researched and developed also requires high-temperature heat treatment to activate the arsenic atoms doped by ion implantation, that is, to send the implanted arsenic atoms into the lattice positions of tellurium atoms, so that It becomes an acceptor type dopant atom. At present, high-pressure heat treatment devices are used in high-temperature heat treatment of mercury cadmium telluride abroad, such as: J. M． Arias, et. at? J． Vac. Sci． Technol. B9(3), 1646(1991), C. C． Wang et． alJ． Electrochem． Soc． 127(8), 175(1980), compared with the traditional mercury source heat treatment process using quartz ampoules, the requirements for high-pressure equipment have been greatly improved.
本发明的目的在于通过改进传统的石英安瓿热处理方法，提供了和高压热处理工艺效果同样的一种新型的高温热处理方法。The object of the present invention is to provide a novel high-temperature heat treatment method with the same effect as the high-pressure heat treatment process by improving the traditional quartz ampoule heat treatment method.
本发明的目的通过如下技术方案达到：本方法先将样品和源分置安瓿两头，样品温度略高于源温3～5℃，其热处理源为含碲汞源并加保护性气体(Forming Gas)，如：氩气、氮气或氢气，利用碲源和保护性气体抑制高温下碲镉汞材料自身的绝对蒸发量，在400～500℃温度范围内进行热处理。所说的Hg-Te热处理源含碲的原子比例大于汞对碲的最大溶解度，小于50％；所用保护性气体室温下的压力在4×104～6×104Pa范围，既能为热处理提供足够的汞压，同时又能满足石英安瓿封管的要求。The object of the present invention is achieved through the following technical solutions: In this method, the sample and the source are separated into two ends of the ampoule, the temperature of the sample is slightly higher than the source temperature by 3 to 5°C, and the heat treatment source is a source containing mercury tellurium and a protective gas (Forming Gas ), such as argon, nitrogen or hydrogen, use tellurium source and protective gas to suppress the absolute evaporation of HgCdTe material itself at high temperature, and perform heat treatment in the temperature range of 400-500 °C. The atomic ratio of tellurium contained in the Hg-Te heat treatment source is greater than the maximum solubility of mercury to tellurium, less than 50 %; Provides sufficient mercury pressure while meeting the seal requirements for quartz ampoules.
为阐述方便，先对本发明附图说明如下：For convenience of explanation, first the accompanying drawings of the present invention are described as follows:
图1．为传统的碲镉汞石英安瓿汞源热处理装置示意图。figure 1. It is a schematic diagram of a traditional mercury cadmium telluride quartz ampoule mercury source heat treatment device.
图2．为传统纯汞源490℃热处理对碲镉汞材料表面的破坏情况的形貌图。figure 2. It is a topography diagram of damage to the surface of HgCdTe material by heat treatment at 490 °C with a traditional pure mercury source.
图3．为用含碲的汞源经490℃热处理后碲镉汞材料表面形貌图，其表面受破坏的程度受到了一定的抑制。image 3. This is the surface topography of HgCdTe material after heat treatment at 490°C with a mercury source containing tellurium, and the degree of damage to the surface has been suppressed to a certain extent.
图4．为本发明采用的充保护性气体和碲-汞源石英安瓿碲镉汞高温热处理装置示意图。Figure 4. It is a schematic diagram of a HgCdTe high-temperature heat treatment device for a quartz ampoule filled with a protective gas and a tellurium-mercury source used in the present invention.
图5．为采用本发明后在490℃30分钟热处理前碲镉汞材料表面Nomarski形貌图。Figure 5. It is a Nomarski topography diagram of the HgCdTe material surface before heat treatment at 490° C. for 30 minutes after adopting the present invention.
图6．为采用本发明后在490℃30分钟热处理后碲镉汞材料表面Nomarski形貌图，表面完整性得到很好保持。Figure 6. The Nomarski topography of the surface of the HgCdTe material after heat treatment at 490° C. for 30 minutes is used in the present invention, and the surface integrity is well maintained.
图7．为采用纯汞加保护性气体经490℃30分钟热处理后碲镉汞材料表面形貌图，仍无法保持表面的完整性。Figure 7. This is the surface topography of the mercury cadmium telluride material after heat treatment at 490°C for 30 minutes using pure mercury plus protective gas, but the integrity of the surface still cannot be maintained.
图8．为采用本发明热处理工艺前碲镉汞材料表面位错坑密度的形貌图。Figure 8. It is a topography diagram of the dislocation pit density on the surface of the HgCdTe material before adopting the heat treatment process of the present invention.
图9．为采用本发明热处理工艺后碲镉汞材料表面位错坑密度的形貌图，表明有效地较低了材料中的位错密度。Figure 9. It is a topography diagram of the dislocation pit density on the surface of the HgCdTe material after the heat treatment process of the present invention is adopted, which shows that the dislocation density in the material is effectively lowered.
下面结合附图对本发明的方法作进一步阐述和分析。The method of the present invention will be further elaborated and analyzed below in conjunction with the accompanying drawings.
请参见图1，传统的石英安瓿汞源热处理装置的示意图，源和样品分置安瓿两头，汞源温度略低于样品3～5℃。实验中发现，传统的汞源热处理工艺在400℃以上时，碲镉汞材料的表面将受到严重破坏，理论计算表明，如：Yang Jianrong，J．Crystal Growth，126，695(1993)，高温下碲镉汞材料所需的碲原子和镉原子的平衡蒸汽压将提高到10-3Pa量级，表面原子的蒸发束流达到1015／cm2s，传统的汞源热处理工艺一般均忽略了这一效应，未在安瓿中提供相应的碲和镉的蒸汽压，因此，当这种工艺用于高温热处理时，由于碲镉汞材料表面碲和镉原子的不断挥发，导致了碲镉汞材料表面层的结构受到了破坏。请参见图2，在图2显示了表面受到破坏的情况。Please refer to Figure 1, a schematic diagram of a traditional quartz ampoule mercury source heat treatment device. The source and sample are placed at two ends of the ampoule, and the temperature of the mercury source is slightly lower than the sample by 3-5°C. It is found in the experiment that when the traditional mercury source heat treatment process is above 400 °C, the surface of HgCdTe material will be seriously damaged. Theoretical calculation shows that, such as: Yang Jianrong, J. Crystal Growth, 126, 695(1993), the equilibrium vapor pressure of tellurium atoms and cadmium atoms required by mercury cadmium telluride materials at high temperatures will increase to the order of 10-3Pa, and the evaporation beam of surface atoms will reach 10 15 /cm 2 s , the traditional mercury source heat treatment process generally ignores this effect, and does not provide the corresponding vapor pressure of tellurium and cadmium in the ampoule. The continuous volatilization of atoms leads to the destruction of the structure of the surface layer of the mercury cadmium telluride material. Please refer to Figure 2, which shows the damage to the surface.
根据这一思想，本发明发明人改用含10～20％碲的汞源替代纯汞源，该源在400℃～500℃范围内，由HgTe固体和与其平衡的Hg-Te液体组成，从原理上讲，只要Hg-Te热处理源含碲的原子比例大于汞对碲的最大溶解度、小于50％效果都是相同的。根据碲镉汞材料的P-T相图，在同一温度下，HgTe的平衡蒸汽压大于Hg1-xCdxTe晶体材料的平衡蒸汽压，采用含碲的汞源后，经490℃热处理后，碲镉汞材料表面受破坏的程度受到了一定的抑制(见图3)，表面缺陷的密度明显有所下降，但仍未完全消除热处理对材料表面的破坏作用。According to this idea, the inventors of the present invention replaced the pure mercury source with a mercury source containing 10-20% tellurium. This source is composed of HgTe solid and Hg-Te liquid in balance with it in the range of 400°C-500°C. In principle, as long as the atomic proportion of tellurium contained in the Hg-Te heat treatment source is greater than the maximum solubility of mercury to tellurium and less than 50%, the effect is the same. According to the PT phase diagram of mercury cadmium telluride material, at the same temperature, the equilibrium vapor pressure of HgTe is greater than that of Hg1- x Cd x Te crystal material. The degree of damage to the surface of the mercury material has been suppressed to a certain extent (see Figure 3), and the density of surface defects has decreased significantly, but the destructive effect of heat treatment on the surface of the material has not been completely eliminated.
若进一步改用Hg-Cd-Te源，也可望改善表面质量，但源的选取和配制均比较麻烦，实验中本发明发明人发现在石英安瓿真空封管之前，在安瓿内充入一定量的保护性气体，如：氩气、氮气或氢气，可有效地抑制碲镉汞材料表面原子在高温下的蒸发，其原理和高压热处理工艺的原理相同，即通过高压来抑制材料表面的蒸发束流。请参见图4，在图4中本发明发明人在石英安瓿中引入了4×104Pa～6×104Pa的保护性气体，并采用含15％碲的汞源作为热处理的源，结果碲镉汞材料经490℃30分钟热处理后，表面完整性得到了很好地保持(见图5和图6)。但采用纯汞加低压的保护性气体的工艺仍无法保持碲镉汞材料表面的完整性(见图7)。因此，本发明提出采用含碲汞源加保护性气体的安瓿热处理方法完成了对碲镉汞材料的高温热处理。If the Hg-Cd-Te source is further used instead, it is also expected to improve the surface quality, but the selection and preparation of the source are bothersome. In the experiment, the inventors of the present invention found that before the vacuum sealing of the quartz ampoule, a certain amount of The protective gas, such as: argon, nitrogen or hydrogen, can effectively inhibit the evaporation of HgCdTe material surface atoms at high temperature. flow. Please refer to Fig. 4, in Fig. 4, the inventor of the present invention introduced a protective gas of 4×10 4 Pa to 6×10 4 Pa in the quartz ampoule, and adopted a mercury source containing 15% tellurium as the source of heat treatment, the result The surface integrity of the HgCdTe material is well maintained after heat treatment at 490°C for 30 minutes (see Figures 5 and 6). However, the process of using pure mercury plus low-pressure protective gas still cannot maintain the integrity of the HgCdTe material surface (see Figure 7). Therefore, the present invention proposes to complete the high-temperature heat treatment of HgCdTe material by adopting the ampoule heat treatment method containing HgTe source plus protective gas.
本发明发明人试用上述方法对在GaAs衬底上用分子束外延生长的Hg1-xCdxTe材料降低位错的效果进行了试验，结果如下表所示：
结果表明本发明可有效地降低碲镉汞材料中的位错密度。图8和图9示出了热处理前后材料表面位错坑密度对比的情况。The results show that the invention can effectively reduce the dislocation density in the HgCdTe material. Figure 8 and Figure 9 show the comparison of the density of dislocation pits on the material surface before and after heat treatment.
本发明的有益效果在于提供了含碲-汞源加保护性气体的安瓿热处理方法，该方法可以避免传统的汞源热处理在高温下对碲镉汞材料表面的破坏，用该方法对碲镉汞出来进行高温热处理后，碲镉汞材料的位错下降了将近一个数量级，同时，材料表面的完整性得到很好的保持。HgCdTe砷掺杂后，需要高温热处理将原占据在汞格点上Ⅴ族的砷原子调整到Ⅵ族碲原子格点上，掺入的砷原子才能形成P型掺杂原子，其高温热处理工艺和降位错的工艺是相同的，如：S．H．Shin，et．atJ．Electronic Materials，22(8)，1039(1993)。因此，本方法也同样适合于碲镉汞材料中掺杂原子在高温下的电性激活。The beneficial effect of the present invention is that the ampoule heat treatment method that contains tellurium-mercury source plus protective gas is provided, and this method can avoid the damage to the surface of mercury cadmium telluride material by traditional mercury source heat treatment at high temperature. After high-temperature heat treatment, the dislocation of the HgCdTe material decreased by nearly an order of magnitude, and at the same time, the integrity of the material surface was well maintained. After HgCdTe is doped with arsenic, high-temperature heat treatment is required to adjust the arsenic atoms originally occupying the V group on the mercury site to the VI group tellurium atom site, and the doped arsenic atoms can form P-type dopant atoms. The high temperature heat treatment process and The dislocation reduction process is the same, such as: S. H． Shin, et. at? J． Electronic Materials, 22(8), 1039 (1993). Therefore, the method is also suitable for electrical activation of dopant atoms in HgCdTe material at high temperature.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106663A CN1060234C (en) | 1997-10-17 | 1997-10-17 | High-temperature heat treatment method for mercury cadmium telluride material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106663A CN1060234C (en) | 1997-10-17 | 1997-10-17 | High-temperature heat treatment method for mercury cadmium telluride material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1195038A CN1195038A (en) | 1998-10-07 |
| CN1060234C true CN1060234C (en) | 2001-01-03 |
Family
ID=5168883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97106663A Expired - Fee Related CN1060234C (en) | 1997-10-17 | 1997-10-17 | High-temperature heat treatment method for mercury cadmium telluride material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1060234C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104532356A (en) * | 2014-12-09 | 2015-04-22 | 中国科学院上海技术物理研究所 | Heat treatment apparatus for eliminating tellurium-zinc-cadmium material precipitate-phase defects |
| CN105908254B (en) * | 2016-06-12 | 2018-07-06 | 中国科学院上海技术物理研究所 | A kind of bushing type cavity body structure for being used to prepare semi-conducting material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2720891A1 (en) * | 1976-06-11 | 1977-12-22 | Cominco Ltd | METHOD FOR IMPROVING THE PROPERTIES OF CADMIUM MERCURY TELLURIDE |
-
1997
- 1997-10-17 CN CN97106663A patent/CN1060234C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2720891A1 (en) * | 1976-06-11 | 1977-12-22 | Cominco Ltd | METHOD FOR IMPROVING THE PROPERTIES OF CADMIUM MERCURY TELLURIDE |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1195038A (en) | 1998-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1327935C (en) | Growth of beta-sic thin films and semiconductor devices fabricated thereon | |
| CA2095449C (en) | Supersaturated rare earth doped semiconductor layers by chemical vapor deposition | |
| US5563092A (en) | Method of producing a substrate for an amorphous semiconductor | |
| Tarsa et al. | Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs | |
| Fraas | A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor deposition | |
| CN1060234C (en) | High-temperature heat treatment method for mercury cadmium telluride material | |
| Harris et al. | A high quantum efficiency in situ doped mid‐wavelength infrared p‐on‐n homojunction superlattice detector grown by photoassisted molecular‐beam epitaxy | |
| CN1133761C (en) | Open pipe tellurium cadmium mercury epitaxial material heat treatment method | |
| Kao et al. | Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy | |
| KR100421800B1 (en) | Method of manufacturing zinc oxide semiconductor | |
| US4095004A (en) | Process for low temperature stoichiometric recrystallization of compound semiconductor films | |
| Stein | Absorption edge and ion bombardment of silicon nitride | |
| CA2128590C (en) | Direct mombe and movpe growth of ii-vi materials on silicon | |
| Kimura et al. | Silicon doping from disilane in gas source MBE of GaAs | |
| JP4120163B2 (en) | Si epitaxial wafer manufacturing method and Si epitaxial wafer | |
| US20060143913A1 (en) | Very low moisture o-ring and method for preparing the same | |
| CN1588623A (en) | Method or growing N-Al co-blended p type ZnO transistor film by two step method | |
| CN116825620A (en) | Method for reducing surface defects of silicon carbide epitaxial wafer | |
| CN1888127A (en) | Molecular beam epitaxy process of growing GaAs-base InSb film | |
| Fraas et al. | Recrystallization of thermally evaporated CdS films via an H2S heat− treatment process | |
| US10304989B2 (en) | Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials | |
| Taskar et al. | The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process) | |
| CN103180491B (en) | A kind of preparation method of p-type zno-based material | |
| RU2330352C1 (en) | Method of obtaining photosensitive structure | |
| Koda | Liquid crystal light valve structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |