CN106018497A - Low-frequency temperature-modulated detection method for semiconductor gas sensor - Google Patents
Low-frequency temperature-modulated detection method for semiconductor gas sensor Download PDFInfo
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- CN106018497A CN106018497A CN201610562247.1A CN201610562247A CN106018497A CN 106018497 A CN106018497 A CN 106018497A CN 201610562247 A CN201610562247 A CN 201610562247A CN 106018497 A CN106018497 A CN 106018497A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000001514 detection method Methods 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 238000005457 optimization Methods 0.000 claims description 5
- 230000000306 recurrent effect Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
- G01N27/123—Circuits particularly adapted therefor, e.g. linearising circuits for controlling the temperature
Abstract
The invention relates to a low-frequency temperature-modulated detection method for a semiconductor gas sensor, in particular to a low-frequency pulse-heating temperature-modulated detection method for the semiconductor gas sensor, and overcomes the defects of nonlinear output, poor selectivity, weak environment temperature interference resistance and the like of the semiconductor gas sensor under a constant heating condition in the prior art. A periodic pulse modulation voltage heating method is adopted for the semiconductor gas sensor, the semiconductor gas sensor outputs periodically changed pulse resistance signals under a heating modulation voltage of a periodic square-wave signal, a sine-wave signal and a triangular-wave signal of which the modulation frequencies are 0.05 to 0.5Hz; as the amplitude ratio Delta(Ra)/Delta(Rg) or Delta(Rg)/Delta(Ra) of the signal output waveform of the semiconductor gas sensor is set as a detection output signal of the semiconductor gas sensor, the amplitude ratio of the concentration of gas to-be-measured to a signal output waveform of the semiconductor gas sensor in a low-frequency temperature-modulated range changes linearly approximately. The low-frequency temperature-modulated detection method is suitable for the semiconductor gas sensor.
Description
Technical field
The present invention relates to a kind of semiconductor gas sensor low frequency temperature method for modulation detection.
Background technology
At present, there is non-linear, poor selectivity and the shortcoming such as environment resistant temperature interference ability is weak in existing semiconductor gas sensor and traditional detection method thereof, constrains extensively application and the development of semiconductor gas sensor.
Summary of the invention
The present invention solves that semiconductor gas sensor and traditional detection method thereof exist non-linear, poor selectivity and the shortcoming such as environment resistant temperature interference ability is weak, it is proposed that a kind of semiconductor gas sensor low frequency temperature method for modulation detection.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection of the present invention, concretely comprising the following steps of the method:
Step one, employing recurrent pulses modulated voltage signal may be modulated as square wave, sine wave, triangular wave as semiconductor gas sensor heater voltage signal, modulated voltage signal waveform；
Step 2, in step one three kinds of modulated voltage signal waveforms, select any of which waveshape signal as heating modulated voltage signal, set heating modulation voltage frequency range as 0.05-0.5Hz(cycle 2-20s), heating modulation voltage amplitude range is for 1-5V；
Step 3, step 2 heating modulation voltage frequency and amplitude perturbations under, gather semiconductor transducer output resistance signal under temperature modulation, the resistance signal exported is approximation triangular wave periodic signal, and the cycle is identical with the heating voltage cycle described in step 2 and frequency with frequency；
Step 4, to the sensor output resistance signal waveform obtained in step 3, extract sensor temperature lower output resistance signal waveform peaks R of modulationmaxWith valley Rmin, calculate output resistance signal amplitude excursion △ R(△ R=Rmax-Rmin), it is thus achieved that sensor signal output waveform amplitude △ R in airaWith sensor signal output waveform amplitude △ R in tested gasg；
Step 5, in step 4 obtain sensor output signal amplitude △ RaWith △ Rg, the Amplitude Ration of setting sensor temperature modulation output signal detects output signal as sensor, if tested gas sensor output amplitude △ Rg>△Ra, set output amplitude ratio for △ Rg/△RaIf, tested gas sensor output amplitude △ Rg<△Ra, set output amplitude ratio for △ Ra/△Rg；
Step 6, in step 5 set Amplitude Ration as detection output signal, build sensor output amplitude than with gas concentration relation curve, determine temperature modulation parameter according to the linearity optimization of curve.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection of the present invention, can be widely used in the detection technique of semiconductor gas sensor, the nonlinear problem of sensor is proposed good solution, and improves selectivity and environment resistant temperature interference ability.It is simple that detection method proposed by the invention has method, the advantage such as low cost, easy realization.
Accompanying drawing explanation
Fig. 1 is the flow chart of the present invention a kind of semiconductor gas sensor low frequency temperature method for modulation detection.
Detailed description of the invention
Detailed description of the invention one, combine accompanying drawing 1 present embodiment is described, a kind of semiconductor gas sensor low frequency temperature method for modulation detection described in present embodiment, concretely comprising the following steps of the method:
Step one, employing recurrent pulses modulated voltage signal may be modulated as square wave, sine wave, triangular wave as semiconductor gas sensor heater voltage signal, modulated voltage signal waveform；
Step 2, in step one three kinds of modulated voltage signal waveforms, select any of which waveshape signal as heating modulated voltage signal, set heating modulation voltage frequency range as 0.05-0.5Hz(cycle 2-20s), heating modulation voltage amplitude range is for 1-5V；
Step 3, step 2 heating modulation voltage frequency and amplitude perturbations under, gather semiconductor transducer output resistance signal under temperature modulation, the resistance signal exported is approximation triangular wave periodic signal, and cycle or frequency are identical with the heating voltage cycle described in step 2 or frequency；
Step 4, to the sensor output resistance signal waveform obtained in step 3, extract sensor temperature lower output resistance signal waveform peaks R of modulationmaxWith valley Rmin, calculate output resistance signal amplitude excursion △ R(△ R=Rmax-Rmin), it is thus achieved that sensor signal output waveform amplitude △ R in airaWith sensor signal output waveform amplitude △ R in tested gasg；
Step 5, in step 4 obtain sensor output signal amplitude △ RaWith △ Rg, the Amplitude Ration of setting sensor temperature modulation output signal detects output signal as sensor, if tested gas sensor output amplitude △ Rg>△Ra, set output amplitude ratio for △ Rg/△RaIf, tested gas sensor output amplitude △ Rg<△Ra, set output amplitude ratio for △ Ra/△Rg；
Step 6, in step 5 set Amplitude Ration as detection output signal, build sensor output amplitude than with gas concentration relation curve, determine temperature modulation parameter according to the linearity optimization of curve.
The method of the invention effectively solves semiconductor gas sensor conventional constant mode of heating output signal and there is non-linear, poor selectivity and the shortcoming such as environment resistant temperature interference ability is weak, has the advantages such as method is simple, low cost, easy operation simultaneously.
Detailed description of the invention two, present embodiment are that semiconductor gas sensor low frequency temperature method for modulation detection a kind of to detailed description of the invention further illustrates, sensor heating modulated voltage signal described in step one is that square wave, sine wave, triangular wave, and peak pulse duration are adjustable.
Detailed description of the invention three, present embodiment are that semiconductor gas sensor low frequency temperature method for modulation detection a kind of to detailed description of the invention further illustrates, heating modulated voltage signal frequency range described in step 2 is 0.05-0.5Hz(cycle 2-20s), according to sensor differences, heating modulation voltage frequency is adjustable in 0.05-0.5Hz.
Detailed description of the invention four, present embodiment are that semiconductor gas sensor low frequency temperature method for modulation detection a kind of to detailed description of the invention further illustrates, heating modulated voltage signal amplitude range 1-5V described in step 2, according to sensor differences, heating modulated voltage signal amplitude is adjustable in 1-5V.
Detailed description of the invention five, present embodiment are that semiconductor gas sensor low frequency temperature method for modulation detection a kind of to detailed description of the invention further illustrates, sensor output amplitude described in step 6 is linear approximate relationship than with gas concentration relation curve, sensor magnitudes can be made to reach linearity requirements than output according to linearity optimization heating modulation voltage parameter (modulation waveform, peak pulse duration, frequency, amplitude).
Claims (7)
1. a semiconductor gas sensor low frequency temperature method for modulation detection, it is characterised in that concretely comprising the following steps of the method:
Step one, employing recurrent pulses modulated voltage signal may be modulated as square wave, sine wave, triangular wave as semiconductor gas sensor heater voltage signal, modulated voltage signal waveform；
Step 2, in step one three kinds of modulated voltage signal waveforms, select any of which waveshape signal as heating modulated voltage signal, set heating modulation voltage frequency range as 0.05-0.5Hz(cycle 2-20s), heating modulation voltage amplitude range is for 1-5V；
Step 3, step 2 heating modulation voltage frequency and amplitude perturbations under, gather semiconductor transducer output resistance signal under temperature modulation；
Step 4, to the sensor output resistance signal waveform obtained in step 3, extract sensor temperature lower output resistance signal waveform peaks R of modulationmaxWith valley Rmin, calculate output resistance signal amplitude excursion △ R(△ R=Rmax-Rmin), it is thus achieved that sensor signal output waveform amplitude △ R in airaWith sensor signal output waveform amplitude △ R in tested gasg；
Step 5, in step 4 obtain sensor output signal amplitude △ RaWith △ Rg, the Amplitude Ration of setting sensor temperature modulation output signal detects output signal as sensor；
Step 6, in step 5 set Amplitude Ration as detection output signal, build sensor output amplitude than with gas concentration relation curve, determine temperature modulation parameter according to the linearity optimization of curve.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterised in that: the sensor heating modulated voltage signal described in step one is that square wave, sine wave, triangular wave, and peak pulse duration are adjustable.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterized in that: the heating modulated voltage signal frequency range described in step 2 is 0.05-0.5Hz(cycle 2-20s), according to sensor differences, heating modulation voltage frequency is adjustable in 0.05-0.5Hz.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterized in that: the heating modulated voltage signal amplitude range 1-5V described in step 2, according to sensor differences, heating modulated voltage signal amplitude is adjustable in 1-5V.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterized in that: the sensor output resistance signal described in step 3 is approximation triangular wave periodic signal, and the cycle is identical with the heating modulated voltage signal cycle described in step 2 and frequency with frequency.
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterised in that: the setting of the sensor output signal Amplitude Ration described in step 5, if tested gas sensor output amplitude △ Rg>△Ra, set output amplitude ratio for △ Rg/△RaIf, tested gas sensor output amplitude △ Rg<△Ra, set output amplitude ratio for △ Ra/△Rg。
A kind of semiconductor gas sensor low frequency temperature method for modulation detection the most according to claim 1, it is characterized in that: the sensor output amplitude described in step 6 is linear approximate relationship than with gas concentration relation curve, sensor magnitudes can be made to reach linearity requirements than output according to linearity optimization heating modulation voltage parameter (modulation waveform, peak pulse duration, frequency, amplitude).
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1141433A (en) * | 1995-02-24 | 1997-01-29 | Lg电子株式会社 | Gas sensing apparatus and method thereof |
| US20050045494A1 (en) * | 2003-08-28 | 2005-03-03 | Yih-Shiaw Huang | Pulse-type gas concentration measurement system and method thereof |
-
2016
- 2016-07-18 CN CN201610562247.1A patent/CN106018497B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1141433A (en) * | 1995-02-24 | 1997-01-29 | Lg电子株式会社 | Gas sensing apparatus and method thereof |
| US20050045494A1 (en) * | 2003-08-28 | 2005-03-03 | Yih-Shiaw Huang | Pulse-type gas concentration measurement system and method thereof |
Non-Patent Citations (3)
| Title |
|---|
| YUKIO HIRANAKA ET AL.: "Gas-dependent response in the temperature transient of SnO2 gas sensors", 《SENSORS AND ACTUATORS B》 * |
| 赵文杰: "陶瓷微热板气体传感器阵列及检测系统研究", 《万方学位论文》 * |
| 魏广芬 等: "气体传感器的温度调制技术研究进展", 《传感器与微系统》 * |
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Effective date of registration: 20231211 Address after: 215200 Puxi Development Zone, Lili Town, Wujiang District, Suzhou City, Jiangsu Province Patentee after: Suzhou Chenlu Technology Industry Investment Management Co.,Ltd. Address before: No. 2226, 22nd Floor, No. 66 Cuilong Street, Longquan Street, Longquanyi District, Chengdu City, Sichuan Province, 610199 Patentee before: Sichuan Panyingda Technology Co.,Ltd. Effective date of registration: 20231211 Address after: No. 2226, 22nd Floor, No. 66 Cuilong Street, Longquan Street, Longquanyi District, Chengdu City, Sichuan Province, 610199 Patentee after: Sichuan Panyingda Technology Co.,Ltd. Address before: 150080 No. 52, Xuefu Road, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN University OF SCIENCE AND TECHNOLOGY |
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