CN103760485B - The rear end detection method of diode, triode - Google Patents
The rear end detection method of diode, triode Download PDFInfo
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- CN103760485B CN103760485B CN201410039571.6A CN201410039571A CN103760485B CN 103760485 B CN103760485 B CN 103760485B CN 201410039571 A CN201410039571 A CN 201410039571A CN 103760485 B CN103760485 B CN 103760485B
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Abstract
The invention discloses the rear end detection method of a kind of diode, triode, the method comprises a window test and the test of two windows, and a window test comprises potential danger test, without dangerous test and crucial test; Two window tests comprise without dangerous test and crucial test, and crucial test mainly contains forward voltage, current amplification factor, leakage current, DC Forward Current and maximum flow electric current in interior parameter testing.The present invention is divided into two testing procedures, the accuracy rate of test increases, test parameter is many, sensing range is large, be provided with potential danger test, the reverse breakdown of product, large saturation current, big current unlatching test and big current gain tested, adds the natural rate of interest of product at potential danger operation, properties of product after test are more excellent, more can get rid of hiding defect ware.
Description
Technical field
The present invention relates to the rear end detection method of electronic product packaging field tests, particularly diode, triode.
Background technology
Original diode, triode detect, just the correlation parameter of diode, triode is detected, such as detect the forward voltage, DC Forward Current, maximum flow electric current etc. of diode, triode, these parameters are the parameter that diode uses, having little significance of the effect after detection and detection.If have defect ware after producing, the method using this cover correlation parameter to detect cannot be decision making to the qualification rate of diode, triode.And if by means of only after so a set of trace routine, just allow product be issued to dealer, such product disqualification rate is very high.
Existing diode, triode product, to improve its performance, also needing that potential danger is made to it and detecting, such as reverse breakdown detection, large saturation current detection etc., better through these its performances of product detected, not fragile under unconventional environment for use yet.But this detection is only fragmentary detection, there is no rule and system, cannot large-scale production be adapted at all.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, the rear end detection method of a kind of diode, triode is provided, be divided into two testing procedures, the accuracy rate of test increases, and test parameter is many, sensing range is large, be provided with potential danger test, the reverse breakdown of product, large saturation current, big current unlatching test and big current gain tested, adds the natural rate of interest of product at potential danger operation, properties of product after test are more excellent, more can get rid of hiding defect ware.
The object of the invention is to be achieved through the following technical solutions: the rear end detection method of diode, triode, it is mainly used in diode, triode packaging and testing, ensure the consistance of testing process, it comprises a window test and the test of two windows, wherein, a described window test comprises the following steps:
S11: product to be measured is sent in a window test bench;
S12: product to be measured carries out potential danger test in a window test bench, potential danger test comprises reverse breakdown test, big current gain test, large saturation current test and big current and opens test;
S13: product to be measured carries out non-hazardous test in a window test bench, comprises basic parameter preliminary survey and QA test, without the test duration that dangerous test optimization is a large amount of without dangerous test;
S14: product to be measured carries out key test in a window test bench;
Two described window tests comprise the following steps:
S21: product to be measured realizes without dangerous test in two window test benches, comprises basic parameter preliminary survey and QA test, without dangerous test optimization a large amount of test duration without dangerous test;
S22: test products realizes crucial test in two window test benches;
After S23: two windows are completed, test products is sent two window test benches.
Described key tests the test comprised following parameter:
A: forward voltage;
B: current amplification factor;
C: leakage current;
D: DC Forward Current;
E: maximum flow electric current.
The present invention has following advantage:
1, be divided into a window test and two windows to test two testing processs, the accuracy rate of test increases, and test parameter is many, and sensing range is large;
2, be provided with potential danger test, the reverse breakdown of product, large saturation current, big current unlatching test and big current gain tested, adds the natural rate of interest of product at potential danger operation;
3, be provided with crucial part of detecting, detect the forward voltage of product, leakage current, DC Forward Current, the parameter such as maximum flow electric current and current amplification factor, properties of product are more excellent, better adaptability;
4, be divided into many tests, make the test consistance of diode, triode better, the properties of product after test are more excellent, get rid of hiding defect ware.
Accompanying drawing explanation
Fig. 1 is method step process flow diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail, but protection scope of the present invention is not limited to the following stated.
As shown in Figure 1, the rear end detection method of diode, triode, it is mainly used in diode, triode packaging and testing, ensures the consistance of testing process, and it comprises a window test and the test of two windows, and wherein, a described window test comprises the following steps:
S11: product to be measured is sent in a window test bench;
S12: product to be measured carries out potential danger test in a window test bench, potential danger test comprises reverse breakdown test, big current gain test, large saturation current test and big current and opens test;
S13: product to be measured carries out non-hazardous test in a window test bench, basic parameter preliminary survey and QA test is comprised without dangerous test, without the test duration that dangerous test optimization is a large amount of, described QA test is quality test, and a window test is mainly for functional test and the quality test of product;
S14: product to be measured carries out key test in a window test bench;
Two described window tests comprise the following steps:
S21: product to be measured realizes without dangerous test in two window test benches, comprises basic parameter preliminary survey and QA test without dangerous test, and without dangerous test optimization a large amount of test duration, described QA test is quality test;
S22: test products realizes crucial test in two window test benches;
After S23: two windows are completed, test products is sent two window test benches.
Described key tests the test comprised following parameter:
A: forward voltage;
B: current amplification factor;
C: leakage current;
D: DC Forward Current;
E: maximum flow electric current.
Claims (2)
1. the rear end detection method of diode, triode, it is mainly used in diode, triode packaging and testing, ensures the consistance of testing process, it is characterized in that: it comprises a window test and the test of two windows, and wherein, a described window test comprises the following steps:
S11: product to be measured is sent in a window test bench;
S12: product to be measured carries out potential danger test in a window test bench, potential danger test comprises reverse breakdown test, big current gain test, large saturation current test and big current and opens test;
S13: product to be measured carries out non-hazardous test in a window test bench, comprises basic parameter preliminary survey and OA test, without the test duration that dangerous test optimization is a large amount of without dangerous test;
S14: product to be measured carries out key test in a window test bench;
Two described window tests comprise the following steps:
S21: product to be measured realizes without dangerous test in two window test benches, comprises basic parameter preliminary survey and OA test, without dangerous test optimization a large amount of test duration without dangerous test;
S22: product to be measured realizes crucial test in two window test benches;
After S23: two windows are completed, product to be measured is sent two window test benches.
2. the rear end detection method of diode according to claim 1, triode, is characterized in that: the test that crucial test comprises following parameter:
A: forward voltage;
B: current amplification factor;
C: leakage current;
D: DC Forward Current;
E: maximum flow electric current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410039571.6A CN103760485B (en) | 2014-01-27 | 2014-01-27 | The rear end detection method of diode, triode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410039571.6A CN103760485B (en) | 2014-01-27 | 2014-01-27 | The rear end detection method of diode, triode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103760485A CN103760485A (en) | 2014-04-30 |
| CN103760485B true CN103760485B (en) | 2016-01-20 |
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| CN201410039571.6A Expired - Fee Related CN103760485B (en) | 2014-01-27 | 2014-01-27 | The rear end detection method of diode, triode |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110398641A (en) * | 2018-04-24 | 2019-11-01 | 强茂股份有限公司 | Element energization test method and energization test macro |
| CN109444703A (en) * | 2018-10-15 | 2019-03-08 | 上海华虹宏力半导体制造有限公司 | The test method of super-junction device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN200976035Y (en) * | 2006-12-07 | 2007-11-14 | 比亚迪股份有限公司 | Device for testing power field-effect transistor static parameter |
| CN102393500A (en) * | 2011-10-08 | 2012-03-28 | 赵振华 | Test method for diode pair with common-cathode or common-anode packaging mode |
| JP5024162B2 (en) * | 2008-03-31 | 2012-09-12 | 富士通セミコンダクター株式会社 | Semiconductor device manufacturing method and semiconductor test apparatus |
| JP2013050342A (en) * | 2011-08-30 | 2013-03-14 | Tokyo Weld Co Ltd | Inspection method of semiconductor device, inspection device, and inspection system |
| CN203069744U (en) * | 2013-03-04 | 2013-07-17 | 滁州学院 | Semiconductor triode parameter tester |
| CN103308277A (en) * | 2012-03-06 | 2013-09-18 | 鸿富锦精密工业（深圳）有限公司 | Testing device, testing method and manufacturing method for laser diode |
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2014
- 2014-01-27 CN CN201410039571.6A patent/CN103760485B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200976035Y (en) * | 2006-12-07 | 2007-11-14 | 比亚迪股份有限公司 | Device for testing power field-effect transistor static parameter |
| JP5024162B2 (en) * | 2008-03-31 | 2012-09-12 | 富士通セミコンダクター株式会社 | Semiconductor device manufacturing method and semiconductor test apparatus |
| JP2013050342A (en) * | 2011-08-30 | 2013-03-14 | Tokyo Weld Co Ltd | Inspection method of semiconductor device, inspection device, and inspection system |
| CN102393500A (en) * | 2011-10-08 | 2012-03-28 | 赵振华 | Test method for diode pair with common-cathode or common-anode packaging mode |
| CN103308277A (en) * | 2012-03-06 | 2013-09-18 | 鸿富锦精密工业（深圳）有限公司 | Testing device, testing method and manufacturing method for laser diode |
| CN203069744U (en) * | 2013-03-04 | 2013-07-17 | 滁州学院 | Semiconductor triode parameter tester |
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