CN105990480A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting element Download PDFInfo
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- CN105990480A CN105990480A CN201610007222.5A CN201610007222A CN105990480A CN 105990480 A CN105990480 A CN 105990480A CN 201610007222 A CN201610007222 A CN 201610007222A CN 105990480 A CN105990480 A CN 105990480A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 227
- 229910052751 metal Inorganic materials 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 119
- 239000010949 copper Substances 0.000 claims abstract description 80
- 229910052802 copper Inorganic materials 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 38
- 239000011159 matrix material Substances 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000010944 silver (metal) Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 21
- 230000009467 reduction Effects 0.000 description 20
- 238000004088 simulation Methods 0.000 description 17
- 238000000605 extraction Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000003475 lamination Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 solder.Such as Chemical class 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
A semiconductor light-emitting element in the embodiment comprises a first semiconductor layer of a first conductivity type, a first electrode containing at least anyone of copper and alloy containing copper, a first metal layer disposed between the first electrode and the first semiconductor layer and containing at least either of silver and aluminum, a second semiconductor layer of a second conductivity type, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer.
Description
[related application]
Subject application is enjoyed based on Japanese patent application case 2015-52578 (applying date: on March 16th, 2015)
The priority of application case.Subject application comprises the full content of basis application case by referring to this basis application case.
Technical field
Embodiments of the present invention relate generally to a kind of semiconductor light-emitting elements.
Background technology
The semiconductor light-emitting elements such as LED (Light Emitting Diode, light emitting diode) comprise and have luminescent layer
Semiconductor layer and the electrode electrically connected with semiconductor layer.For this kind of semiconductor light-emitting elements, it is desirable to improve luminous efficiency.
Summary of the invention
Embodiments of the present invention provide the semiconductor light-emitting elements that a kind of luminous efficiency is higher.
The semiconductor light-emitting elements of embodiment possesses: the first semiconductor layer of the first conductivity type；Comprise copper and containing copper
Alloy at least any one the first electrode；It is arranged between described first electrode and described first semiconductor layer, comprises
At least any one the first metal layer in silver and aluminum；Second semiconductor layer of the second conductivity type；And it is arranged on described the first half
The 3rd semiconductor layer between conductor layer and described second semiconductor layer.
Accompanying drawing explanation
Figure 1A and Figure 1B is the schematic diagram of the semiconductor light-emitting elements of illustrated embodiment.
Fig. 2 A and Fig. 2 B is the schematic diagram of Exemplary conductive properties of materials.
Fig. 3 A and Fig. 3 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 4 A and Fig. 4 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 5 is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 6 A and Fig. 6 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 7 A and Fig. 7 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 8 A and Fig. 8 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
Fig. 9 A～Fig. 9 E is the schematic cross sectional views being illustrated in the simulation of semiconductor light-emitting elements the model used.
Figure 10 A～Figure 10 D is the schematic diagram of the result illustrating simulation.
Figure 11 A～Figure 11 D is the schematic sectional being illustrated in another simulation of semiconductor light-emitting elements the model used
Figure.
Figure 12 A～Figure 12 D is the schematic diagram illustrating analog result.
Figure 13 A～Figure 13 D is the schematic sectional being illustrated in another simulation of semiconductor light-emitting elements the model used
Figure.
Figure 14 A～Figure 14 D is the schematic diagram of the result illustrating simulation.
Figure 15 A and Figure 15 B is the schematic plan of the result illustrating simulation.
Detailed description of the invention
Hereinafter, referring to the drawings, while each embodiment is illustrated.
Additionally, accompanying drawing is schematically to scheme or conceptual figure, the size between the thickness of each several part and the relation of width, part
Ratios etc. are not limited to must be identical with material object.And, even if in the case of representing identical part, there is also mutual
The situation that size or ratio represent with reference to the accompanying drawings and differently.
Additionally, in this specification with each figure, the key element mark identical with the key element about the figure be given described before
Note identical symbol, and suitably omit detailed description.
Figure 1A and Figure 1B is the schematic diagram of the semiconductor light-emitting elements of illustrated embodiment.
Figure 1A is the perspective plan view of exemplary semiconductor light-emitting component 101.Figure 1A corresponding to shown in Figure 1B only from arrow
The top view that AA direction is observed.Figure 1B is the sectional view of the A-A' line of Figure 1A.
As illustrated in figures ia and ib, the semiconductor light-emitting elements 101 of present embodiment comprises matrix 95, metal level 93, amasss
Layer body the 80, first electrode the 21, second electrode 22, the first metal layer 31 and insulating barrier 40.Semiconductor light-emitting elements 101 is luminous
Diode (Light Emitting Diode:LED).
In the following description, by from the first semiconductor layer 10 to the lamination direction (first direction) of the second semiconductor layer 20
It is set to Z-direction.A direction orthogonal relative to Z-direction is set to X-direction.Will be orthogonal relative to Z-direction and relative
The direction orthogonal in X-direction is set to Y direction.
Matrix 95 such as supports the tectosomes such as laminate the 80, first electrode 21 and the second electrode 22.Matrix 95 such as has
Electric conductivity.Matrix 95 such as comprises Si, Cu or CuW etc..
Matrix 95 is provided with metal level 93.Metal level 93 uses the low-melting-point metals such as solder.Such as, metal level 93 wraps
Containing gold (Au), silver (Ag), copper (Cu), indium (In), antimony (Sb), stannum (Sn), zinc (Zn), cadmium (Cd), lead (Pb), bismuth (Bi) and gallium
(Ga) at least any one, and comprise the metal of more than two kinds.But, in the case of using In, Sn or Bi, it is possible to be one
Plant metal.Metal level 93 for example, bonding layer.
Laminate 80 is arranged on matrix 95 across metal level 93 and the second electrode 22.Laminate 80 has matrix 95 side
First 80a and with second 80b that first 80a is opposition side.Laminate 80 comprises the first semiconductor layer 10, second
Semiconductor layer 20 and the 3rd semiconductor layer 30.
First semiconductor layer 10 is the semiconductor layer of the first conductivity type.First conductivity type for example, N-shaped.First semiconductor layer
10 GaN layer such as comprising N-shaped.
Second semiconductor layer 20 be arranged on the second electrode 22 and the first semiconductor layer 10 a part (Part I 10a) it
Between.Second semiconductor layer 20 is the semiconductor layer of the second conductivity type.Second conductivity type for example, p-type.Second semiconductor layer 20 example
As comprised the GaN layer of p-type.
Additionally, in this example, the first conductivity type is set to N-shaped, the second conductivity type is set to p-type, but in embodiments, also
Can the first conductivity type be p-type, the second conductivity type be N-shaped.
3rd semiconductor layer 30 is arranged between the Part I 10a of the first semiconductor layer 10 and the second semiconductor layer 20.
3rd semiconductor layer 30 for example, luminescent layer.3rd semiconductor layer 30 such as comprises InGaN, and has multiple quantum trap structure
Make.The thickness of the 3rd semiconductor layer 30 is more than 20nm below 200nm.
Additionally, the layer comprised in laminate 80 is not limited to described example.The layer comprised in laminate 80 also can comprise
Various GaN nitride-based semiconductors, other Group III-V compound semiconductor or other various compound semiconductors.
What the first electrode 21 was arranged on laminate 80 is opposition side with second 80b.First electrode 21 is across the first metal
Layer 31 and electrically connect with the first semiconductor layer 10.First electrode 21 comprises the material that resistance is relatively low.Such as, the first electrode 21 comprises
Copper (Cu) and containing copper alloy at least any one.Alloy containing copper for example, phosphorized copper or Kufil etc..The
More than the thickness of one electrode 21 for example, 0.1 micron (μm).
The first metal layer 31 is arranged between the first electrode 21 and the Part II 10b of the first semiconductor layer 10.Second
Point 10b is in the second direction (such as X-direction) intersected with Z-direction, with Part I 10a part side by side.Second
The thickness along Z-direction of part 10b is thinner than Part I 10a.The first metal layer 31 laminate 80 with second 80b phase
Toss about, connect with the first semiconductor layer 10.The first metal layer 31 comprise in silver (Ag) and aluminum (Al) at least any one.Such as,
For the first metal layer 31, use Al, AlSi, AlCu, AlSiCu or Ag etc..
Second electrode 22 is arranged on first 80a side of laminate 80.Second electrode 22 is at first 80a, with the second half
Conductor layer 20 connects, and electrically connects with the second semiconductor layer 20.A part for second electrode 22 and the first electrode 21 are in Z-direction
Overlapping.Second electrode 22 such as comprises Ag.More than the thickness for example, 20 nm (nm) of the second electrode 22.
As shown in Figure 1B, the region being provided with the first electrode 21 in laminate 80 is relatively not provided with the region of the first electrode 21
A part thin.That is, laminate 80 has recess, has jump at first 80a.First semiconductor layer 10 is provided with
Three parts 10c.Part III 10c, and prolongs in Z-direction in X-direction between Part I 10a and Part II 10b
Stretch.Part III 10c has the face tilted relative to Z-direction.
As shown in Figure 1A, the first electrode 21 is included on X-Y plane the fine wire electrode of the part extended with wire.Wire
Width (along the width in the direction vertical with the direction that the first electrode 21 extends) for example, more than the 20nm of part.And, first
Electrode 21 electrically connects with the first weld pad Pd1 in the corner being arranged on semiconductor light-emitting elements 101.Second electrode 22 be arranged on half
The second weld pad Pd2 electrical connection in the corner of conductor light-emitting component 101.
The flat shape of the first electrode 21 is set to only cover the careless shape of a part for laminate 80.Fine wire electrode
Flat shape can use the combination of frame-shaped, pectination, clathrate, zigzag and these shapes.First electrode 21 is alternatively net
Shape or point-like.
Insulating barrier 40 is arranged between the first electrode 21 and the second electrode 22, the first electrode 21 and the first semiconductor layer 10
Between (Part I 10a), between the first electrode 21 and the second semiconductor layer 20 and the first electrode 21 and the 3rd semiconductor layer 30
Between.A part for insulating barrier 40 is overlapping with the 3rd semiconductor layer 30 in the X-axis direction.It addition, insulating barrier 40 is to cover first
The mode of electrode 21 is formed.That is, a part for insulating barrier 40 is overlapping with the first electrode 21 in the Z-axis direction.
Insulating barrier 40 such as comprises silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), lithium fluoride
(LiF), aluminium oxide (Al2O3), aluminium nitride (AlN), hafnium oxide (HfO2) and silicon system resin at least any one.Insulating barrier 40
Also other oxide, nitride and fluoride etc. can be comprised.Insulating barrier 40 also can comprise the mixture of described material.Insulation
Layer 40 also can comprise space.
Make electric current via the first electrode 21 and between first weld pad Pd1 and the second weld pad Pd2 by making current flow through
Two electrodes 22 flow to laminate 80.Thus, the 3rd semiconductor layer 30 launches light.The light launched from the 3rd semiconductor layer 30 such as wraps
Wavelength components containing more than 400nm below 600nm.
Advance to the direction of second 80b from a part for the light of the 3rd semiconductor layer 30 transmitting, and go out from second 80b
Light.Reflect by the first electrode 21 or the second electrode 22 from another part of the light of the 3rd semiconductor layer 30 transmitting, and from second
80b goes out light.
In semiconductor light-emitting elements 101, the first electrode 21 and the second electrode 22 1 are arranged on first 80a side,
And flow through electric current at transverse direction.Therefore, the structure of semiconductor light-emitting elements 101 is referred to as the Thin-Film of laterally energising type
(Lateral Thin-Film:LTF, lateral thin-film) constructs.In LTF structure, it is not provided with electricity in exiting surface (second 80b) side
Pole, therefore light extraction efficiency is higher.Additionally, embodiment is alternatively is provided with the second electrode 22 first 80a side and at second
80b side is provided with the Thin-Fi1m (Vertical Thin-Film:VTF, longitudinal thin film) of the longitudinal direction energising type of the first electrode 21
Structure.
On the other hand, in LTF constructs, area that the second electrode 22 connects with the second semiconductor layer 20, the first electrode 21
Area and the area (insulation between the first electrode 21 and the second semiconductor layer 20 in region that electrode is isolated from each other
The area of a part of 40a of layer 40) summation be restricted to not reach chip area.What is called " area " refers to that projection is put down to XY herein
Area during face.It addition, area when projecting the face the most vertical with bearing of trend of the arbitrary portion of the first electrode 21 is set to
Sectional area.In LTF constructs, the area of electrode, sectional area are all vulnerable to joining of restriction, especially fine wire electrode (the first electrode 21)
Line resistance uprises.Accordingly, there are following situation, i.e. be difficult to scale up at electric current along the direction of X/Y plane, thus luminescence becomes not
Uniformly.If the expansion of electric current becomes uneven, then efficiency cannot utilize the entirety of luminescent layer well, thus luminous efficiency fall
Low.And then, there is following situation, i.e. made driving voltage increase by the increase of wiring resistance, thus produce the fall of luminous efficiency
The low increase with caloric value.
Reduction for the luminous efficiency in suppression LTF structure, it is possible to consider to expand the side of the width (area) of fine wire electrode
The method of the radical of method or increase fine rule.But, in these methods, contribute to the area of the 3rd semiconductor layer 30 of luminescence
Can reduce.And then, if reducing the area of the 3rd semiconductor layer 30, then overall electric current density easily increases, thus causes interior amount
The reduction (Droop (decline) phenomenon) of sub-efficiency.The reduction of this internal quantum efficiency is aobvious in the case of with large driven current density element
Write, cause the reduction of luminous efficiency.
Method as the reduction of suppression luminous efficiency, it is also contemplated that electrode is used the side of the metal that conductivity is higher
Method.As the material that conductivity is higher, it is possible to enumerate such as gold (Au), silver (Ag) and copper (Cu).But, if electrode uses Au
Or Ag, then manufacturing cost can increase.And then, in the case of electrode uses Ag, it is easily generated the energising after being formed by element and causes
Migration.Accordingly, there are that electrode is yielding thus situation that reliability reduces.
The resistance of Cu is relatively low, and the material as electric wiring is excellent.On the other hand, in visible region, the suction of the light of Cu
Yield is higher.Therefore, in the case of Cu is used as electrode, there is the part from the light of the 3rd semiconductor layer 30 transmitting electric
Pole absorbs thus the situation of light extraction efficiency reduction.
Fig. 2 A and Fig. 2 B is the schematic diagram of Exemplary conductive properties of materials.Fig. 2 A is the electrical conductivity (conduction representing Al and Cu
Rate) table of σ, Fig. 2 B is the curve chart of the luminous reflectance representing Al and Cu.
As shown in Figure 2 A, when 20 DEG C, the conductivityσ of Al is 3.55 × 107(/ Ω m), in contrast, the electrical conductivity of Cu
Higher, it is 5.81 × 107(/Ωm).It addition, when 100 DEG C, the conductivityσ of Al is 2.82 × 107(/ Ω m), in contrast, C
The conductivityσ of u is higher, is 4.48 × 107(/Ωm).So, Cu has the higher electrical conductivity of about 1.6 times relative to Al.
The longitudinal axis of Fig. 2 B represents the reflectance R of the light being vertically incident to metal from insulator, and transverse axis represents incident light
Wavelength X (nm).Fig. 2 B represents use SiO2Or GaN is as insulator, and use Cu or Al as the situation of metal.Such as Fig. 2 B
Shown in, during wavelength below 600nm degree, the reflectance of Cu is less than Al.Therefore, emission wavelength be below 600nm send out
In optical element, in the case of using Cu as electrode, the loss of light becomes big compared with the situation using Al.Additionally, it is not shown
The reflectance of Ag higher in the wavelength region of Fig. 2 B, be about 97%.
In the nitride-based semiconductor based light-emitting devices such as White LED, such as illuminating part sends blue light.Blue light has
Wavelength near 450nm.A part of wavelength phosphor body of blue light is changed by White LED, obtains white light on the whole.
Also have by red illuminating part or the illuminating part lamination of color are obtained the composition of white light.In either case, from sending out
The energy of the light that light portion launches is present in the scope that wavelength is below 600nm mostly.The reflectance of the electrode of illuminated this kind of light
More satisfactory is higher throughout wider wavelength domain.Thereby, it is possible to the loss of suppression light.From the viewpoint of reflectance, more satisfactory
Al or Ag is used for electrode.But, as describe, use in the case of Al at fine wire electrode, exist wiring resistance increase from
And the doubt that luminous efficiency reduces, in the case of fine wire electrode uses Ag, have what the reliability caused by migrating reduced
Doubt.
In contrast, in the semiconductor light-emitting elements 101 of embodiment, for fine wire electrode (the first electrode 21), make
With the higher Cu of electrical conductivity.And then, between the first electrode 21 and the first semiconductor layer 10, it is provided with that to comprise reflectance higher
The first metal layer 31 of Al or Ag.
Thereby, it is possible to reduce the wiring resistance of the first electrode 21.Therefore, electric current expands the most equably, it is possible to efficiency is good
Utilize the entirety of luminescent layer to make luminous efficiency improve.And then, from a part for the light of the 3rd semiconductor layer 30 transmitting by instead
The first metal layer 31 that rate of penetrating is higher reflects, and goes out light from second 80b.Thereby, it is possible to make light extraction efficiency improve.
So, according to embodiment, do not make the light loss of fine wire electrode (the first electrode 21) increase and just can suppress distribution
The rising of resistance.This refers to the most only reduce resistance value, and can cut down the area of fine wire electrode.Therefore, it is possible to increase the
The area of three semiconductor layers 30.
In the case of the first metal layer 31 uses Ag, from the viewpoint of optics infiltration is long, the thickness of the first metal layer 31
Degree (along the thickness of Z-direction) is more satisfactory for more than 40nm, is more preferably more than 80nm.The feelings of Al are used at the first metal layer 31
Under condition, from the viewpoint of optics infiltration is long, the thickness of the first metal layer 31 is more satisfactory for more than 20nm, be more preferably 40nm with
On.Thus, in the first metal layer 31, light becomes easily to reflect such that it is able to make light extraction efficiency improve.On the other hand, the first gold medal
The thickness of genus layer 31 is especially in the case of using Al, more satisfactory for below 200nm.
Such as, for making the wiring resistance of fine wire electrode (the first electrode 21) reduce, it is also possible to consider to thicken fine wire electrode
Method.But, if the first electrode 21 becomes blocked up, then the second electrode 22 being formed under the first electrode 21 or metal level 93 meeting
Produce concavo-convex.If produce this kind concavo-convex, then have and produce jump on the composition surface of matrix 95 and metal level 93 thus engage and become
Insufficient situation.Therefore, characteristic or the mechanical strength of light-emitting component reduces.It addition, in the case, at metal level 93 and base
The near interface of body 95 is easily generated hole (space).If generation hole, then have as the second electrode 22 Ag by migrate and
The mobile situation to hole, thus have light-emitting component and produce fault.And then, insufficient with the joint of metal level 93 at matrix 95
In the case of, have and reduced by the thermal diffusivity of the luminous produced heat of laminate 80.So, the increase of the thickness of fine wire electrode
Reliability or yield to element make a very bad impression.From the viewpoint of heat conductivity or reliability, the thickness of fine wire electrode is wanted
It is restricted.
In contrast, in the semiconductor light-emitting elements 101 of embodiment, the first electrode 21 uses the Cu that resistance is relatively low.Cause
This, do not make the first electrode 21 thicken just and wiring resistance can be made to reduce.Thereby, it is possible to the rank on the composition surface of suppression and matrix 95
Difference, it is thus achieved that good joint.Therefore, it is possible to make the reliability of element or yield improve.
Fig. 3 A and Fig. 3 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
The semiconductor light-emitting elements 102 of the change case of Fig. 3 A illustrated embodiment.Fig. 3 A is corresponding to the sectional view of Figure 1B.
Semiconductor light-emitting elements 102 is different from semiconductor light-emitting elements 101 at the aspect comprising the second metal level 32.Except this
Outside, semiconductor light-emitting elements 102 is identical with semiconductor light-emitting elements 101.Additionally, omit metal level 93 and the figure of matrix 95
Show.
Second metal level 32 is overlapping with the first electrode 21 in the X-axis direction.Second metal level 32 is electrically connected with the first electrode 21
Connect.Second metal level 32, between insulating barrier 40 and the first electrode 21, (intersects with X/Y plane covering the side of the first electrode 21
Face) mode and arrange.
Such as, the second metal level 32 comprises first area 32a and second area 32b.Second area 32b is in the X-axis direction
Separate with first area 32a.First electrode 21 is arranged between first area 32a and second area 32b.
The material of the second metal level 32 is such as identical with the material of the first metal layer 31.The material of the second metal level 32 also can
Enough different from the material of the first metal layer 31.Thickness (the side vertical relative to the side of the first electrode 21 of the second metal level 32
To thickness) identical with the thickness of the first metal layer 31.
Reflect at the second metal level 32 from a part for the light of the 3rd semiconductor layer 30 transmitting and go out light from second 80b.
Thereby, it is possible to the loss of the light in suppression the first electrode 21, and then light extraction efficiency is made to improve.
The semiconductor light-emitting elements 103 of the change case of Fig. 3 B illustrated embodiment.Fig. 3 B is corresponding to the sectional view of Figure 1B.
Semiconductor light-emitting elements 103 is different from semiconductor light-emitting elements 102 at the aspect comprising the 3rd metal level 33.Except this
Outside, semiconductor light-emitting elements 103 is identical with semiconductor light-emitting elements 102.Additionally, omit metal level 93 and the figure of matrix 95
Show.
3rd metal level 33 is arranged in the mode with the first metal layer 31 face as opposition side that covers the first electrode 21.
That is, the first electrode 21 is between the first metal layer 31 and the 3rd metal level 33.And, the 3rd metal level 33 is positioned at the first electrode
Between 21 and insulating barrier 40.3rd metal level 33 also can form with the second metal level 32.
The material of the 3rd metal level 33 is such as identical with the material of the first metal layer 31.The material of the 3rd metal level 33 also may be used
Different from the material of the material of the first metal layer 31 and the second metal level 32.Thickness (the thickness along Z-direction of the 3rd metal level 33
Degree) such as identical with the thickness of the first metal layer 31.
Reflect at the 3rd metal level 33 from a part for the light of the 3rd semiconductor layer 30 transmitting and go out light from second 80b.
Thereby, it is possible to the loss of the light in suppression the first electrode 21, and then light extraction efficiency is made to improve.
Additionally, first～the 3rd each of metal level 31～33 also can have lamination structure.Such as, it is possible to comprise Ni, Ti,
In Zn, Cr and Mg at least any one, and also can comprise the metal film of above below the 10nm of thickness 0.1nm in optical surface side.
I.e., it is possible to for being configured with the structure of at least film of any one comprised in Al or Ag between this metal film and the first electrode 21.
With cover first～the 3rd the refractive index of insulating barrier 40 that formed of the mode of metal level 31～33 more satisfactory for being less than
The refractive index (refractive index of the first semiconductor layer 10, the refractive index of the second semiconductor layer 20) of laminate 80.Thus, from the 3rd half
The light that conductor layer 30 is launched is easily by insulating barrier 40, and by first～the 3rd metal level 31～33 reflection.Thereby, it is possible to use light
Efficiency improves.
Fig. 4 A and Fig. 4 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
The semiconductor light-emitting elements 104 of the change case of Fig. 4 A illustrated embodiment.Fig. 4 A is corresponding to the sectional view of Figure 1B.Half
Conductor light-emitting component 104 is different from semiconductor light-emitting elements 102 at the aspect comprising conductive layer 50.
Conductive layer 50 is arranged between the second electrode 22 and metal level 93 and between insulating barrier 40 and metal level 93.Conduction
Layer 50 connects with the second electrode 22 and electrically connects.Conductive layer 50 such as has the function making electric current expand.
For conductive layer 50, use high conductive material.Such as, conductive layer 50 comprises titanium (Ti), gold (Au), aluminum (Al) and stannum
(Sn) at least any one.The expansion of electric current can be made to improve by arranging this kind of conductive layer 50.
The semiconductor light-emitting elements 105 of the change case of Fig. 4 B illustrated embodiment.Fig. 4 B is corresponding to the sectional view of Figure 1B.
In semiconductor light-emitting elements 105, compared with semiconductor light-emitting elements 104, relatively thinly form the first electrode 21
And insulating barrier 40.In addition, the composition of semiconductor light-emitting elements 105 is identical with semiconductor light-emitting elements 104.
In semiconductor light-emitting elements 105, the thickness of the degree of depth of the recess of laminate 80 and insulating barrier 40 is (along Z-direction
Thickness) be substantially equal.Additionally, the degree of depth of the recess of so-called laminate 80 refer to the thickness of the second semiconductor layer 20, the 3rd
The summation of the difference of the thickness of the thickness of semiconductor layer 30 and the thickness of Part I 10a and Part II 10b.Thereby, it is possible to
Reduce the rank between the face connected with the second electrode 22 and the face connected with the second electrode 22 of insulating barrier 40 of laminate 80
Difference.Therefore, it is possible to reduce the concavo-convex of the second electrode 22 being formed under laminate 80 or conductive layer 50 further.
The electrical conductivity of Cu described above is about 1.6 times of the electrical conductivity of Al.Such as, the situation of Cu is used at the first electrode 21
Under, compared with the situation using Al, so that it may for maintaining identical wiring resistance, it is possible to the thickness making electrode is 1/1.6 times.
I.e., it is possible to the Al electrode of 1.4 μ m thick is replaced with the Cu electrode of 0.9 μ m thick.
Such as, the thickness of a part for the insulating barrier 40 being arranged between the first electrode 21 and the second electrode 22 is 0.4 μm.
Therefore, if the first electrode 21 uses the Cu electrode of 0.9 μ m thick, and the degree of depth of the recess of laminate 80 is set to 1.3 μm, then
The concavo-convex of the second electrode 22 or conductive layer 50 can be reduced.Thus, matrix 95 is being connect across metal level 93 with conductive layer 50
During conjunction, it is possible to form good metal.
Fig. 5 is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
The semiconductor light-emitting elements 106 of the change case of Fig. 5 illustrated embodiment.Fig. 5 is corresponding to the sectional view of Figure 1B.Half
In conductor light-emitting component 106, do not form insulating barrier 40.It addition, the second electrode 22 of semiconductor light-emitting elements 106 is in Z-direction
On not overlapping with the first electrode.In addition, the explanation of semiconductor light-emitting elements 106 and saying semiconductor light-emitting elements 103
Bright identical.Semiconductor light-emitting elements 106 is the element with so-called flip chip configuration.
In the semiconductor light-emitting elements with flip chip configuration, it is also possible to by higher by first～with reflectance
Three metal levels 31～33 cover the first electrode 21 comprising Cu and suppress the increase of wiring resistance, and make the loss of light reduce.
Thereby, it is possible to make luminous efficiency improve.
Fig. 6 A and Fig. 6 B is the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
The semiconductor light-emitting elements 107 of the change case of Fig. 6 A illustrated embodiment.Fig. 6 A is corresponding to the sectional view of Figure 1B.
Compared with described semiconductor light-emitting elements 103, semiconductor light-emitting elements 107 also comprises first～the 6th intermediate layer
61～66.First～the 4th intermediate layer 61～64 for example, barrier layer.Five, the 6th intermediate layer for example, basal layeres.
First intermediate layer 61 is arranged between the first electrode 21 and the first metal layer 31.Second intermediate layer 62 is arranged on first
Between electrode 21 and the second metal level 32.3rd intermediate layer 63 is arranged between the first electrode 21 and the 3rd metal level 33.4th
Intermediate layer 64 is arranged between the second electrode 22 and conductive layer 50.
First～the 4th each in intermediate layer 61～64 comprise nickel (Ni), chromium (Cr), titanium (Ti), platinum (Pt), palladium (Pd), magnesium
(Mg), in cobalt (Co), stannum (Sn), tungsten (W) and molybdenum (Mo) at least any one.First～the 3rd intermediate layer 61～63 both can be that
The layer of this identical material, it is possible to for the layer of mutually different material.
Suppress the mixing (diffusion) each other of the layer of institute's lamination by arranging these intermediate layers, make stability or adhesion carry
High.
5th intermediate layer 65 is arranged between conductive layer 50 and metal level 93.6th intermediate layer 66 be arranged on metal level 93 with
Between matrix 95.
5th intermediate layer 65 and the 6th intermediate layer 66 comprise respectively in Ti, Pt, Ni, W, Mo, Cr and Au at least any one.
5th intermediate layer 65 and the 6th intermediate layer 66 also can have multi-ply construction.By arranging the 5th intermediate layer 65 and the 6th intermediate layer 66
The wettability that can make solder improves.It addition, the mixing (diffusion) each other of the layer of institute's lamination can be suppressed.
In semiconductor light-emitting elements 107, the first electrode 21 along X-direction width along from laminate 80 to matrix 95
Direction and become narrow gradually.
A part for insulating barrier 40 is overlapping with the second semiconductor layer 20 in the Z-axis direction.Insulating barrier 40 has lamination structure,
And comprise dielectric film 41 and dielectric film 42.Dielectric film 41 connects with the second metal level 32 and the 3rd metal level 33.Dielectric film 42 is
Connect with the recess (Part II 10b and Part III 10c) of laminate 80, and be arranged on laminate 80 and dielectric film 41 it
Between.
In semiconductor light-emitting elements 107, also in the same manner as semiconductor light-emitting elements 101～106, it is possible to by first
Electrode 21 uses Cu that electrical conductivity is higher to reduce the wiring resistance of the first electrode.Thus, electric current expands the most equably.Can imitate
Rate utilizes the entirety of luminescent layer well such that it is able to make luminous efficiency improve.And then, it is possible to by the reflectance of light higher
The loss at the first electrode 21 of light that one～the 3rd metal level 31～33 and reducing is launched from the 3rd semiconductor layer 30, so that
Light extraction efficiency improves.
And then, in semiconductor light-emitting elements 107, the second metal level 32 comprise be arranged on dielectric film 41 and dielectric film 42 it
Between part P1.Thus, such as can the area of higher the second metal level 32 of spread reflection rate.
The semiconductor light-emitting elements 108 of the change case of Fig. 6 B illustrated embodiment.Fig. 6 B is corresponding to the sectional view of Figure 1B.
In semiconductor light-emitting elements 108, the first metal layer 31 comprises and is arranged between dielectric film 41 and dielectric film 42
Part P2.Thus, such as can the area of the higher the first metal layer 31 of spread reflection rate.
It addition, as semiconductor light-emitting elements 108, dielectric film 41 also can not connect with the end E1 of dielectric film 42.Except this
Outside, semiconductor light-emitting elements 108 is identical with semiconductor light-emitting elements 107.
Fig. 7 A, Fig. 7 B, Fig. 8 A and Fig. 8 B are the schematic cross sectional views of another semiconductor light-emitting elements of illustrated embodiment.
These sectional views are corresponding to the sectional view of Figure 1B.
The semiconductor light-emitting elements 109 of the change case of Fig. 7 A, Fig. 7 B, Fig. 8 A, Fig. 8 B respectively illustrated embodiment, 110,
111 and 112.In these semiconductor light-emitting elements, more it is provided with Cu following layer 67.
Cu following layer 67 is arranged between the first electrode 21 and insulating barrier 40.For Cu following layer 67, it is possible to use such as
In Ti, Pt, Ni, W and Cr at least any one.Cu following layer 67 can be multi-ply construction, and also can comprise mutually different material
Multiple layers.The first electrode 21 can be made to improve with the adhesion of insulating barrier 40 by arranging this kind of Cu following layer 67.
In semiconductor light-emitting elements 109, insulating barrier 40 comprises dielectric film 43 and dielectric film 44.
Dielectric film 44 is that the recess (Part II 10b and Part III 10c) with laminate connects, and is arranged on the first gold medal
Belong between layer 31 and laminate 80 and between the second metal level 32 and laminate 80.
Dielectric film 43 is formed in the way of covering the lower surface (face of matrix 95 side) of the first electrode 21, and is arranged on Cu
Between following layer 67 and conductive layer 50.
The end E2 of the dielectric film 44 and end E3 of dielectric film 43 in the Z-axis direction with one of the second semiconductor layer 20
Divide overlap.The end E2 of dielectric film 44 both can connect with dielectric film 43 as shown in Figure 7 A, it is possible to the most not with dielectric film
43 connect.It addition, the end E2 of dielectric film 44 also can be the most overlapping with the second electrode 22 as shown in Figure 8 A.Dielectric film
The end E3 of 43 also can be the most overlapping with the second electrode 22 as shown in Figure 8 B.
In semiconductor light-emitting elements 109～112, the first electrode 21 along X-direction width along from laminate 80 to
The direction of matrix 95 and gradually broaden.This kind of shape be by forming recess on laminate 80 after, embedment Cu layer is as the
One electrode 21, and obtained by CMP (Chemical Mechanical Polishing, chemically mechanical polishing) planarization.By
This, such as compared with the example of Fig. 6 A and Fig. 6 B, it is possible to reduces the concavo-convex of conductive layer 50 or metal level 93.Thus, by matrix 95
When being connected across metal level 93 with conductive layer 50, it is possible to form good metal.
It addition, in semiconductor light-emitting elements 109～112, also in the same manner as semiconductor light-emitting elements 101～108, it is possible to
By the first electrode 21 uses Cu that electrical conductivity is higher reduce the wiring resistance of the first electrode.Thus, electric current is the most equably
Expand such that it is able to make luminous efficiency improve.And then, the first metal layer 31 etc. higher by the reflectance of light makes to lead from the 3rd half
The luminous reflectance that body layer 30 is launched, therefore light extraction efficiency can be made to improve.
Hereinafter, the analog result of the characteristic of the semiconductor light-emitting elements representing embodiment is illustrated.
Fig. 9 A～Fig. 9 E is the schematic cross sectional views being illustrated in the simulation of semiconductor light-emitting elements the model used.
Semiconductor light-emitting elements shown in Fig. 9 A～Fig. 9 E is at first electrode 21 and first～the 3rd metal level 31～33
Composition aspect is different.In addition, the semiconductor light-emitting elements shown in Fig. 9 A～Fig. 9 E and the quasiconductor illustrated by Fig. 6 A
Light-emitting component 107 is identical.
In Fig. 9 A～Fig. 9 E, only illustrate the right side of the center from X-direction of the first electrode 21.Fig. 9 A～a left side of Fig. 9 E
Hold the center of the X-direction corresponding to the first electrode 21.Left end is the open model of absorbing boundary, and light echo exposes to again
Except the impact quilt of the first electrode 21.The width of the Y direction of semiconductor light-emitting elements is set to 4 μm, and the end of Y direction is set to
Symmetrical border.The width (along the width of X-direction) of the first electrode 21 is set to 20 μm, by width and first electricity of insulating barrier 40
The summation of the width of pole 21 is set to 32 μm.The thickness of the first semiconductor layer 10 is set to 2 μm, the thickness of the film of insulating barrier 40 is set
It is 0.8 μm, the summation of the thickness of the first electrode 21 is set to 1.9 μm.The material of insulating barrier 40 is set to SiO2(refractive index n=
1.47)。
Fig. 9 A represents the semiconductor light-emitting elements of the structure with Al fine wire electrode.In this structure, the first electrode 21 uses
Al, and it is not provided with first～the 3rd metal level 31～33.
Fig. 9 B represents the semiconductor light-emitting elements of the structure with Al (TSB)/Cu fine wire electrode.In this structure, the first electricity
Pole 21 uses Cu, and is provided with first～the 3rd metal level 31～33.Additionally, " T " represents the upper surface at the first electrode 21
(Top) being provided with the metal level comprising Al, " S " expression is provided with, in the side (Side) of the first electrode 21, the metal comprising Al
Layer, B represents that the lower surface (Bottom) at the first electrode 21 is provided with the metal level comprising Al.
Fig. 9 C represents the semiconductor light-emitting elements of the structure with Al (TS)/Cu fine wire electrode.In this structure, the first electrode
21 use Cu, and are provided with the first metal layer 31 and the second metal level 32.It is not provided with the 3rd metal level 33.
Fig. 9 D represents the semiconductor light-emitting elements of the structure with Al (T)/Cu fine wire electrode.In this structure, the first electrode
21 use Cu, and are provided with the first metal layer 31.It is not provided with the second metal level 32 and the 3rd metal level 33.
Fig. 9 E represents the semiconductor light-emitting elements of the structure with Cu fine wire electrode.In this structure, the first electrode 21 uses
Cu, and it is not provided with first～the 3rd metal level 31～33.
Use FDTD (Finite-Difference Time-domain, Finite difference time domain) method in simulations, calculate figure
The action of the light of the model of 9A～Fig. 9 E.In simulations, the wavelength of the light launched from the 3rd semiconductor layer 30 is set to 450nm.
Figure 10 A～Figure 10 D is the schematic diagram of the result of the simulation of the structure of diagrammatic illustration 9A～Fig. 9 E.
In simulations, the region R1 of Figure 10 A is set to light-emitting zone.
Figure 10 B is the curve chart illustrating the NFP (Near Field Pattern, near field pattern) near the first electrode 21.
The longitudinal axis of Figure 10 B represents light intensity Int (arbitrary unit, arbitrary unit).Transverse axis represents from the first electrode central authorities
Distance Rx (μm).Distance Rx=0 is corresponding to the position of the left end of Figure 10 A.
Figure 10 C is the light intensity in the structure relative to Fig. 9 A of light intensity Int in each structure representing Fig. 9 B～Fig. 9 E
The curve chart of the distribution of the ratio RAI of Int.
Figure 10 D is to represent light extraction efficiency (the Light extraction in the structure shown in Fig. 9 A～Fig. 9 D
Efficiency:LEE) table.Figure 10 D also illustrates that the LEE's of the LEE of each structure of Fig. 9 B～Fig. 9 E structure relative to Fig. 9 A
Reduction rate.
Will appreciate that according to Figure 10 C, in the case of using Cu fine wire electrode, with the situation phase using Al fine wire electrode
Ratio, along with being greatly reduced away from light-emitting zone R1, light intensity Int to the first electrode 21 side.In contrast, use Al (T)/Cu thin
Light intensity distributions in the case of line electrode is identical with the situation of Al fine wire electrode.
Will appreciate that according to Figure 10 D, the LEE in the case of Cu fine wire electrode relative to the reduction rate of Al fine wire electrode be-
4.19%.In contrast, LEE in the case of Al (T)/Cu fine wire electrode relative to the reduction rate of Al fine wire electrode be-
0.2%.And then, it is provided with the LEE in the case of Al (the TS)/Cu fine wire electrode of the second metal level 32 and is provided with the 3rd gold medal
Belong to the LEE in the case of Al (the TSB)/Cu fine wire electrode of layer 33 to be substantially equal to the situation using Al fine wire electrode.
Figure 11 A～Figure 11 D is the schematic sectional being illustrated in another simulation of semiconductor light-emitting elements the model used
Figure.
Semiconductor light-emitting elements shown in Figure 11 A～Figure 11 D is at the first electrode 21 and first～the 3rd metal level 31～33
Composition aspect different.In addition, described in the structure of the semiconductor light-emitting elements shown in Figure 11 A～Figure 11 D and Fig. 7 B
Bright semiconductor light-emitting elements 110 is identical.The condition of simulation is identical with the situation of Fig. 9 A～Fig. 9 E.Herein, SiO is also used2(folding
Penetrate rate n=1.47) as the material of insulating barrier 40.
Figure 11 A represents that the semiconductor light-emitting elements of the structure with Al fine wire electrode, Figure 11 B represent have Al (TS)/Cu
The semiconductor light-emitting elements of the structure of fine wire electrode, Figure 11 C represents that the quasiconductor of the structure with Al (T)/Cu fine wire electrode is sent out
Optical element, Figure 11 D represents the semiconductor light-emitting elements of the structure with Cu fine wire electrode.
Calculate the action of light in the model of these Figure 11 A～Figure 11 D.
Figure 12 A～Figure 12 D is the schematic diagram of the result of the simulation of the structure of diagrammatic illustration 11A～Figure 11 D.
In simulations, the region R1 of Figure 12 A is set to light-emitting zone.
It it is the curve illustrating the NFP (Near Field Pattern) near the first electrode 21 in the same manner as Figure 12 B and Figure 10 B
Figure.
Figure 12 C is the light intensity in the structure relative to Figure 11 A of light intensity Int in each structure representing Figure 11 B～Figure 11 D
The curve chart of the distribution of the ratio RAI of degree Int.
Figure 12 D is light extraction efficiency (the Light extraction representing the structure shown in Figure 11 A～Figure 11 D
Efficiency:LEE) table.Figure 12 D also illustrates that the LEE of each structure of Figure 11 B～Figure 11 D structure relative to Figure 11 A
The reduction rate of LEE.
Will appreciate that according to Figure 12 C, in the case of using Cu fine wire electrode, with the situation phase using Al fine wire electrode
Ratio, along with being greatly reduced away from light-emitting zone R1, light intensity Int to the first electrode 21 side.In contrast, using Al (T)/Cu
In the case of fine wire electrode, it is known that the reduction of light intensity Int reduces.But, near the border of region R1, it is seen that light intensity
The reduction of Int.Use the light intensity distributions in the case of Al (TS)/Cu fine wire electrode that the reduction of light intensity Int can be made to enter one
Step reduces, and is equal to the situation of Al fine wire electrode.
Will appreciate that according to Figure 10 D, the LEE in the case of Cu fine wire electrode relative to the reduction rate of Al fine wire electrode be-
5.40%.LEE in the case of Al (T)/Cu fine wire electrode is-1.56% relative to the reduction rate of Al fine wire electrode.Relative to
This, in the case of using Al (TS)/Cu fine wire electrode, it is possible to obtains the LEE being substantially equal to the situation of Al fine wire electrode.
Figure 13 A～Figure 13 D is the schematic sectional being illustrated in another simulation of semiconductor light-emitting elements the model used
Figure.
Insulating barrier 40 for the semiconductor light-emitting elements shown in Figure 13 A～Figure 13 D uses SiN.In addition, Figure 13 A
～the semiconductor light-emitting elements shown in Figure 13 D is identical with the semiconductor light-emitting elements shown in Figure 11 A～Figure 11 D respectively.
The action of light in the model of these Figure 13 A～Figure 13 D is calculated in the same manner as the situation of Fig. 9 A～Fig. 9 E.
Figure 14 A～Figure 14 D is the schematic diagram of the analog result in the structure of diagrammatic illustration 13A～Figure 13 D.
In simulations, the region R1 of Figure 14 A is set to light-emitting zone.
It it is the curve illustrating the NFP (Near Field Pattern) near the first electrode 21 in the same manner as Figure 14 B and Figure 10 B
Figure.
Figure 14 C is the light intensity in the structure relative to Figure 13 A of light intensity Int in each structure representing Figure 13 B～Figure 13 D
The curve chart of the distribution of the ratio RAI of degree Int.
Figure 14 D is light extraction efficiency (the Light extraction representing the structure shown in Figure 13 A～Figure 13 D
Efficiency:LEE) table.Figure 14 D also illustrates that the LEE of each structure of Figure 13 B～Figure 13 D structure relative to Figure 13 A
The reduction rate of LEE.
As shown in Figure 14 C, in the case of using Cu fine wire electrode, compared with the situation using Al fine wire electrode, along with
It is greatly reduced away from light-emitting zone R1, light intensity Int to the first electrode 21 side.Using Al (T)/Cu thin in contrast, understand
In the case of line electrode, the reduction of light intensity Int reduces.But, near the border of region R1, it is seen that the fall of light intensity Int
Low.Use the light intensity distributions in the case of Al (TS)/Cu fine wire electrode that the reduction of light intensity Int can be made to reduce further,
It is equal to the situation of Al fine wire electrode.
As shown in fig. 14d, the LEE in the case of Cu fine wire electrode is-6.66% relative to the reduction rate of Al fine wire electrode.
LEE in the case of Al (T)/Cu fine wire electrode is-2.98% relative to the reduction rate of Al fine wire electrode.In contrast, make
In the case of Al (TS)/Cu fine wire electrode, it is possible to obtain the LEE the most equal with the situation of Al fine wire electrode.
Figure 15 A and Figure 15 B is the schematic plan of the analog result of the characteristic of exemplary semiconductor light-emitting component.
The each of Figure 15 A and Figure 15 B corresponds to the schematic plan shown in Figure 1A.Half shown in Figure 15 A and Figure 15 B
In conductor light-emitting component, chip size is 1.4mm × 1.4mm, and the live width of the first electrode 21 is 14 μm, the thickness of the first electrode 21
It it is 1 μm.The radical (radical of the linear parts that the transverse direction at figure extends) of the first electrode 21 is set to 6, by the first weld pad
The number of Pd1 is set to 1.Additionally, the section shape of these semiconductor light-emitting elements and the semiconductor light-emitting elements of explanation in Fig. 6 A
107 is identical.
In semiconductor light-emitting elements shown in Figure 15 A, the first electrode 21 is Al fine wire electrode.Quasiconductor shown in Figure 15 B
In light-emitting component, the first electrode 21 is Cu fine wire electrode.Calculate in these semiconductor light-emitting elements and driving electric current is set to 350mA
Time electric current density.
In Figure 15 A and Figure 15 B, gray scale represent the distribution of electric current density.This gray scale is to be represented each quasiconductor by color
Maximum current density J in light-emitting componentmax(A/cm2) size (%) of electric current density when being set to 100%.Color is the lightest (close
In white), then electric current density is the biggest.
Will appreciate that according to Figure 15 A and Figure 15 B, the situation of the use Cu fine wire electrode of Figure 15 B is thin with the use Al of Figure 15 A
The situation of line electrode is compared, and the region that electric current density is higher is distributed widely, it is believed that the uniformity that electric current expands is higher.Its reason
It is, as it has been described above, the electrical conductivity that Cu is compared with Al is high.
The driving voltage Vf in the case of Al fine wire electrode is used to be about 2.76V.In the case of using Cu fine wire electrode
Driving voltage Vf is about 2.73V.It addition, use maximum current density J in the case of Al fine wire electrodemaxIt is 35.33 (A/
cm2), use maximum current density J in the case of Cu fine wire electrodemaxIt is 32.18 (A/cm2).During use Cu fine wire electrode
The uniformity that electric current expands is higher, therefore thinks that maximum current density is relatively low.
Using the mould service efficiency in the case of Al fine wire electrode is 51.02%, in the case of using Cu fine wire electrode
Mould service efficiency be 56.00%.So-called mould service efficiency is that calculating current Density Distribution is relevant to the shape of mould
Coefficient gained, is defined as 100% when electric current is evenly distributed in mould entirety.In the case of using Cu fine wire electrode, electricity
The uniformity that stream expands is higher, it is believed that mould service efficiency is higher.
With reference to as described in above analog result description, according to the semiconductor light-emitting elements of embodiment, passed through
First electrode 21 use Cu that electrical conductivity is higher easily make electric current expand equably.Thus, it is provided that a kind of good land productivity of efficiency
With the semiconductor light-emitting elements that luminescent layer is overall and luminous efficiency is higher.And then, by the surface configuration light at the first electrode 21
The first metal layer 31 grade that reflectance is higher and the light launched from the 3rd semiconductor layer 30 can be suppressed to be absorbed by the first electrode 21,
It is thus possible to make light extraction efficiency improve.
Additionally, so-called " nitride-based semiconductor " is to represent to comprise to make chemical formula B in this specification×InyAlzGa1-x-y-zN(0
X 1,0 y 1,0 z 1, x+y+z 1) in ratio of components x, y and z change in respective scope obtained by all
The quasiconductor of composition.It addition, and then will the most also comprise the nitride half of V group element in addition to N (nitrogen) in described chemical formula
Conductor, also it is included as controlling the various physical property such as conductivity type and the nitride-based semiconductor of various elements that adds and also comprising non-has
The nitride-based semiconductor of the various elements that meaning comprises is also considered as belonging to " nitride-based semiconductor ".
Additionally, in this manual, " vertically " not only comprises strict vertical, also comprises the deviation in such as manufacturing step
Deng, as long as substantial orthogonality.
Above, with reference to concrete example, while embodiments of the present invention are illustrated.But, the reality of the present invention
The mode of executing is not limited to these concrete examples.
As long as it addition, the range combinations that the key element of any more than two of each concrete example is technically possible and winner bag
Then it is also contained in the scope of the present invention containing spirit of the invention.
Additionally, as embodiments of the present invention, by those skilled in the art with described semiconductor light-emitting elements as base
As long as all semiconductor light-emitting elements that the suitable design for change of plinth can be implemented comprise spirit of the invention then falls within this
Bright scope.
Additionally, in the thought category of the present invention, as long as being those skilled in the art, then it is conceivable that various modification
And fixed case, and understand the scope of the present invention is fallen within for these modifications and fixed case.
Some embodiments of the present invention are illustrated, but these embodiments are to propose as example, and
It is not intended to limit the scope of invention.The embodiment of these novelties can be implemented with other various forms, and can without departing from
Carry out various omission in the range of the objective of invention, replace, change.These embodiments or its change are contained in the scope of invention
Or objective, and it is contained in claims described invention and the scope of equalization thereof.
[explanation of symbol]
10 first semiconductor layers
10a Part I
10b Part II
10c Part III
20 second semiconductor layers
21 first electrodes
22 second electrodes
30 the 3rd semiconductor layers
31 the first metal layers
32 second metal levels
32a first area
32b second area
33 the 3rd metal levels
40 insulating barriers
41～44 dielectric films
50 conductive layers
61～66 first～the 6th intermediate layer
67 Cu following layers
80 laminates
80a first
80b second
93 metal levels
95 matrixes
σ electrical conductivity
101～112 semiconductor light-emitting elements
AA arrow
E1～E3 end
Int light intensity
P1, P2 part
Pd1 the first weld pad
Pd2 the second weld pad
R reflectance
R1 light-emitting zone
RAI ratio
Rx distance
Claims (17)
1. a semiconductor light-emitting elements, it is characterised in that possess:
First semiconductor layer of the first conductivity type；
First electrode, comprise copper and containing copper alloy at least any one；
The first metal layer, is arranged between described first electrode and described first semiconductor layer, comprises at least appointing in silver and aluminum
One；
Second semiconductor layer of the second conductivity type；And
3rd semiconductor layer, is arranged between described first semiconductor layer and described second semiconductor layer.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that: more for the second metal level, this second gold medal
Belong to layer with in the second direction orthogonal to the first direction of described second semiconductor layer from described first semiconductor layer with described
First electrode is overlapping, comprise in silver and aluminum at least any one, and electrically connect with described first electrode.
Semiconductor light-emitting elements the most according to claim 2, it is characterised in that: described second metal level comprises
First area；And
The second area separated with described first area in this second direction；
Described first electrode is arranged between described first area and described second area.
Semiconductor light-emitting elements the most according to claim 2, it is characterised in that the most standby:
Second electrode；And
Insulating barrier；
Described second semiconductor layer is arranged between the Part I of described second electrode and described first semiconductor layer, and described
Three semiconductor layers are arranged between the described Part I of described first semiconductor layer and described second semiconductor layer,
Described the first metal layer is arranged between the Part II of described first semiconductor layer and described first electrode,
Described insulating barrier at least some of between described second electrode and described first electrode, described second semiconductor layer with
Extend between described first electrode and between described 3rd semiconductor layer and described first electrode,
A described part for described insulating barrier is overlapping with described 3rd semiconductor layer in this second direction,
Described second metal level is between described insulating barrier and described first electrode.
Semiconductor light-emitting elements the most according to claim 4, it is characterised in that: the refractive index of described insulating barrier is less than described
The refractive index of the first semiconductor layer.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that: more for comprising at least appointing in silver and aluminum
3rd metal level of one,
Described first electrode is arranged between described the first metal layer and described 3rd metal level.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that: 20 how the thickness of described the first metal layer be
Below above 200 nm of rice.
Semiconductor light-emitting elements the most according to claim 4, it is characterised in that: described the second of described first semiconductor layer
Part the thickness along described first direction less than described first semiconductor layer described Part I along described first direction
Thickness.
Semiconductor light-emitting elements the most according to claim 4, it is characterised in that: a part for described second electrode is described
On first direction overlapping across described insulating barrier with described first electrode.
Semiconductor light-emitting elements the most according to claim 1, it is characterised in that: described first electrode package be contained in relative to
The part extended the plane that first direction to described second semiconductor layer is vertical from described first semiconductor layer.
11. semiconductor light-emitting elements according to claim 1, it is characterised in that: from described 3rd semiconductor layers
The wavelength of a part for light is below more than 400 nm 600 nm.
12. semiconductor light-emitting elements according to claim 4, it is characterised in that: described first electrode along described first
The thickness in direction be thinner than the thickness along described first direction of described Part I and described Part II along described first party
To the difference of thickness, the thickness along described first direction of described second semiconductor layer and described 3rd semiconductor layer along institute
State the summation of the thickness of first direction.
13. semiconductor light-emitting elements according to claim 4, it is characterised in that: more for comprising in Si, Cu and CuW
At least matrix of any one,
Described second electrode is arranged between described second semiconductor layer and described matrix.
14. semiconductor light-emitting elements according to claim 13, it is characterised in that: more for being arranged on described matrix and institute
At least any one the layer stated between the second electrode, comprise in Au, Ag, Cu, In, Sb, Sn, Zn, Cd, Pb, Bi and Ga.
15. semiconductor light-emitting elements according to claim 4, it is characterised in that: described insulating barrier comprises the first dielectric film
With the second dielectric film,
Described first dielectric film connects with described second metal level and described 3rd metal level,
Described second dielectric film is arranged between a part for described first dielectric film and described first semiconductor layer.
16. semiconductor light-emitting elements according to claim 13, it is characterised in that: described first electrode along described second
The width in direction is along broadening to the direction of described matrix from described first semiconductor layer.
17. semiconductor light-emitting elements according to claim 16, it is characterised in that: described insulating barrier comprises the 3rd dielectric film
With the 4th dielectric film,
Described 3rd dielectric film is arranged between described first electrode and described matrix,
Described 4th dielectric film connects with described first semiconductor layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015052578A JP2016174047A (en) | 2015-03-16 | 2015-03-16 | Semiconductor light emitting element |
| JP2015-052578 | 2015-03-16 |
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| Publication Number | Publication Date |
|---|---|
| CN105990480A true CN105990480A (en) | 2016-10-05 |
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ID=57009252
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610007222.5A Pending CN105990480A (en) | 2015-03-16 | 2016-01-06 | Semiconductor light-emitting element |
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| Country | Link |
|---|---|
| JP (1) | JP2016174047A (en) |
| CN (1) | CN105990480A (en) |
| TW (1) | TW201705525A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447774A (en) * | 2019-08-29 | 2021-03-05 | 株式会社东芝 | Photodetector, photodetection system, laser radar device, and vehicle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1758455A (en) * | 2004-10-07 | 2006-04-12 | 三星电子株式会社 | Reflecting electrode and the compound semiconductor light emitting device that comprises it |
| US20070295952A1 (en) * | 2006-06-23 | 2007-12-27 | Lg Electronics Inc. | Light Emitting Diode having vertical topology and method of making the same |
| CN103606610A (en) * | 2013-10-21 | 2014-02-26 | 溧阳市东大技术转移中心有限公司 | Electrode structure of light-emitting diode |
-
2015
- 2015-03-16 JP JP2015052578A patent/JP2016174047A/en active Pending
- 2015-12-08 TW TW104141180A patent/TW201705525A/en unknown
-
2016
- 2016-01-06 CN CN201610007222.5A patent/CN105990480A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1758455A (en) * | 2004-10-07 | 2006-04-12 | 三星电子株式会社 | Reflecting electrode and the compound semiconductor light emitting device that comprises it |
| US20070295952A1 (en) * | 2006-06-23 | 2007-12-27 | Lg Electronics Inc. | Light Emitting Diode having vertical topology and method of making the same |
| CN103606610A (en) * | 2013-10-21 | 2014-02-26 | 溧阳市东大技术转移中心有限公司 | Electrode structure of light-emitting diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447774A (en) * | 2019-08-29 | 2021-03-05 | 株式会社东芝 | Photodetector, photodetection system, laser radar device, and vehicle |
| CN112447774B (en) * | 2019-08-29 | 2024-04-26 | 株式会社东芝 | Photodetector, light detection system, laser radar device, and vehicle |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201705525A (en) | 2017-02-01 |
| JP2016174047A (en) | 2016-09-29 |
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