CN105990219A - Method of cleaning semiconductor device - Google Patents
Method of cleaning semiconductor device Download PDFInfo
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- CN105990219A CN105990219A CN201510051612.8A CN201510051612A CN105990219A CN 105990219 A CN105990219 A CN 105990219A CN 201510051612 A CN201510051612 A CN 201510051612A CN 105990219 A CN105990219 A CN 105990219A
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Abstract
The invention provides a method of cleaning a semiconductor device, comprising the following steps: after chemical mechanical polishing (CMP) is performed on a copper layer, the polished copper layer is oxidized; and then, the oxidized copper layer is first-cleaned with acidic cleaner or alkaline cleaner. After the polished copper layer is oxidized, a polishing byproduct formed in the CMP process is reacted with oxygen to form an oxide, and the oxidized polishing byproduct is reacted with the cleaner, so that the removal efficiency of the polishing byproduct is improved. In addition, in the oxidization step, the surface of the copper layer is also oxidized, an oxidized copper layer is formed, the oxidized copper layer is removed in the first cleaning step, and the polishing byproduct adhered to the oxidized layer is peeled off a semiconductor wafer, so that the removal efficiency of the polishing byproduct is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, especially relate to the cleaning method of a kind of semiconductor device.
Background technology
Chemically mechanical polishing (Chemical Mechanical polishing is called for short CMP) is a kind of conventional
Flatening process.In such as field of semiconductor manufacture, CMP is widely used in the layer insulations such as oxide-film
Layer preparation, and polymerization silicon electrode, tungsten plug, fleet plough groove isolation structure (shallow trench isolation,
It is called for short STI), and copper interconnection structure the technique such as prepares.
Such as in copper interconnection structure preparation technology, the groove in semiconductor crystal wafer, and surface formation
After layers of copper, the grinding head of CMP planarization equipment is propped up the layers of copper of semiconductor wafer surface, and applies to grind
Mill power, simultaneously at layers of copper surface spraying ground slurry in order to corrode layers of copper, accelerates the grinding rate on copper surface.
In a cmp process, grinding head produces substantial amounts of heat, ground slurry meeting and copper with the friction of layers of copper
Reacting and form grinding by-product, these by-products can adhere to layers of copper surface after grinding, thus
Reduce the copper interconnection structure performance being subsequently formed.
To this end, after the CMP operation prepared of copper interconnection structure, step all can be carried out, to remove CMP
In technique, produced by-product, improves the performance of the copper interconnection structure being subsequently formed.
But, along with the development of semiconductor technology, the required precision for semiconductor device is strict all the more,
Use the copper interconnection structure purity requirements after the cleaning after the CMP that existing technique carries out still cannot expire
The required precision of foot semiconductor device.
To this end, how to improve in copper interconnection structure preparation, after CMP operation, form the cleanliness factor of layers of copper, with
Improve the performance of copper interconnection structure being subsequently formed, be those skilled in the art's problems of needing solution badly.
Summary of the invention
The problem that the present invention solves is to provide the cleaning method of a kind of semiconductor device, can be effectively improved CMP
The cleanliness factor of layers of copper after grinding.
For solving the problems referred to above, the cleaning method of a kind of semiconductor device of the present invention, including:
Semiconductor crystal wafer is provided；
Described semiconductor crystal wafer is formed layers of copper；
Described layers of copper is ground with chemical mechanical milling tech；
Layers of copper surface after grinding is carried out oxidation processes；
Layers of copper after oxidation processes carries out the first cleaning, and described first cleans as using acidic cleaner
Clean or use the cleaning of alkaline cleaner.
Alternatively, the step that the layers of copper surface after grinding carries out oxidation processes includes: the copper after grinding
It is placed in air oxidation.
Alternatively, the layers of copper after grinding is placed in air in the step of oxidation, and described layers of copper is placed in sky
In gas 1～30 minute.
Alternatively, described first the cleaning for using acidic cleaner, the PH of described acidic cleaner are cleaned
Value is 3～5.
Alternatively, described first the cleaning for using alkaline cleaner, the PH of described alkaline cleaner are cleaned
Value is 7～10.
Alternatively, after grinding described layers of copper with chemical mechanical milling tech, before carrying out described oxidation processes,
Described cleaning method also includes:
Layers of copper after grinding is carried out the second cleaning.
Alternatively, described second the cleaning for using acidic cleaner, the PH of described acidic cleaner are cleaned
Value is 4～6.
Alternatively, described second the cleaning for using alkaline cleaner, the PH of described alkaline cleaner are cleaned
Value is 7～10.
Alternatively, after grinding described layers of copper with chemical mechanical milling tech, clean carrying out described second
Before step, also include using deionized water that the layers of copper after grinding is carried out the 3rd cleaning.
Alternatively, before carrying out oxidation processes, described cleaning method also includes: to the layers of copper after grinding
Carry out the first dried.
Alternatively, described first dried includes: the layers of copper before using isopropyl acetone to clean first is carried out
Dried.
Alternatively, after the described first step cleaned, the cleaning method of described semiconductor device also includes
Described layers of copper is carried out the second dried.
Alternatively, described second dried includes: the layers of copper after using isopropyl acetone to clean first is carried out
Second dried.
Compared with prior art, technical scheme has the advantage that
After layers of copper is carried out cmp, the layers of copper after grinding is carried out oxidation processes；The most again
Use acidic cleaner or use alkaline cleaner, the layers of copper after oxidation is carried out the first cleaning.Right
After layers of copper after grinding carries out oxidation processes, make grinding by-product and the oxygen reaction formed in CMP
Form oxide, thus promote that oxidized grinding by-product reacts with abluent, and then improve grinding pair
The removal efficiency of product；
Additionally, in described oxidation treatment step, layers of copper surface is the most oxidized, formed in described layers of copper
Copper oxide, thus in described first cleaning step, described copper oxide is eliminated, and causes and is attached to institute
The grinding by-product stated in oxide layer is peeled off by described semiconductor crystal wafer, and then improves grinding by-product
Elimination efficiency.
Accompanying drawing explanation
Fig. 1 to Fig. 6 is the schematic diagram of cleaning method one embodiment of semiconductor device of the present invention；
Fig. 7 is for using existing cleaning method and using one embodiment of the invention to enter semiconductor crystal wafer respectively
After row cleans, the comparison chart of the composition in two block semiconductor wafers；
Fig. 8 is for using existing cleaning method and using one embodiment of the invention to enter semiconductor crystal wafer respectively
After row cleans, after two block semiconductor wafer layers of copper surfaces form silicon nitride layer, layers of copper and silicon nitride layer
Adhesion comparison diagram.
Detailed description of the invention
As described in the background art, after CMP grinding technics, by-product can be ground at copper remained on surface,
But use existing cleaning to be difficult to remove these and grind by-product, thus affect layers of copper after follow-up grinding
Cleanliness factor, and then the performance of such as copper interconnection structure that impact is subsequently formed.
To this end, the invention provides the cleaning method of a kind of semiconductor device, including:
Semiconductor crystal wafer is provided, forms layers of copper on a semiconductor wafer；Described copper is being ground with CMP
After Ceng, the layers of copper surface after grinding is carried out oxidation processes；Again the layers of copper after oxidation processes is carried out first
Cleaning, described first cleans the cleaning cleaning or using alkaline cleaner for using acidic cleaner.
In the technical scheme that the present invention improves, the layers of copper after grinding with CMP is carried out oxidation processes,
The grinding by-product formed in the layers of copper surface after grinding and CMP is made to form oxidation with oxygen reaction
Thing, thus promote oxidized grinding by-product to react with abluent, to improve the removal grinding by-product
Efficiency.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with the accompanying drawings,
It is described in detail with the specific embodiment to the present invention.
Fig. 1～Fig. 6 is the structural representation of an embodiment of the cleaning method of the semiconductor device of offer.
The cleaning method of the present embodiment semiconductor device specifically includes:
With reference to shown in Fig. 1, it is provided that semiconductor crystal wafer.
In the present embodiment, described semiconductor crystal wafer includes Semiconductor substrate 10, and is positioned at described quasiconductor lining
Dielectric layer 20 at the end 10.
Described Semiconductor substrate 10 is silicon substrate.But in other embodiments, described Semiconductor substrate 10 is also
Can be germanium, germanium silicon, gallium arsenide substrate or silicon-on-insulator substrate, common Semiconductor substrate all can conduct
Semiconductor substrate in the present embodiment；Additionally, be also formed with transistor junction in described Semiconductor substrate 10
Structure, fleet plough groove isolation structure, and and the semiconductor components and devices such as metal interconnection structure.The present invention is to described
Material and the structure of Semiconductor substrate do not limit.
In the present embodiment, the material of described dielectric layer 20 is silicon oxide, and forming method is chemical gaseous phase deposition
(Chemical Vapor Deposition is called for short CVD), but this area is applicable to the material of dielectric layer
Can be employed as the described dielectric layer 20 in this enforcement, the present invention is to the material of described dielectric layer 20 and formation side
Method does not limit.
With continued reference to Fig. 1, in the present embodiment, forming opening 21 in dielectric layer 20, described opening 21 is used for
Filler metal conductive material, to form metal interconnection structure.
Described opening 21 can be formed by dielectric layer 20 described in dry etching, and the forming method of this opening 21 is
The mature technology of this area, does not repeats them here.
In conjunction with reference to Fig. 2, described semiconductor crystal wafer forms layers of copper 30.
In the present embodiment, forming layers of copper 30 on described dielectric layer 20, described layers of copper 30 fills described opening
21, and cover the surface of described dielectric layer 20.Described layers of copper 30 is used for forming metal interconnection structure.
Referring again to Fig. 3, use cmp (Chemical Mechanical Polish is called for short CMP)
Remove the layers of copper of segment thickness, make layers of copper 31 surface in described opening 21 flush with the surface of dielectric layer 20.
During CMP, the ground slurry being sprayed on described layers of copper 30 surface reacts with layers of copper 30, simultaneously
CMP tool grinding head props up described layers of copper 30, and applies abrasive power, thus accelerates the grinding speed on copper surface
Rate.
With continued reference to Fig. 3, after described CMP, layers of copper 31 after grinding and the table of dielectric layer 20
Face can form grinding by-product 40, and described grinding by-product 40 can affect the semiconductor device being subsequently formed
Energy.
To this end, described semiconductor crystal wafer is carried out technique to remove described grinding by-product.
In the present embodiment, described cleaning includes:
First use deionized water, the dielectric layer 20 after CMP and layers of copper 31 carried out the 3rd cleaning,
To remove the grinding by-product on described layers of copper 31 and dielectric layer 20.
In described 3rd cleaning step, some and described layers of copper 31 and more weak the grinding of dielectric layer 20 adhesion
Mill by-product is removed under flow action, but still remains in described layers of copper 31 and dielectric layer 20 surface
The residual stronger with described layers of copper 31 and dielectric layer 20 adhesion.
Alternatively, after described 3rd cleaning step, use acidic cleaner or alkaline cleaner, right
Described layers of copper 31 and dielectric layer 20 carry out the second cleaning.
In the present embodiment, described second cleaning step includes, uses acidic cleaner to described semiconductor die
Circle is carried out.
In described second cleaning step, the grinding by-product of residual is dissolved in described acidic cleaner,
Thus improve the cleaning dynamics to layers of copper 31 and dielectric layer 20.
In cleaning described second, if the acidity of acidic cleaner is the most weak, reduces described grinding by-product and go
Except efficiency；If the acidity of acidic cleaner is too strong, layers of copper can be caused by excessive corrosion, thus affect follow-up
The performance of semiconductor device formed.
In the present embodiment, the pH value of described acidic cleaner is between 4～6.
In another embodiment of the invention, can use alkaline cleaner that described semiconductor crystal wafer carries out
Two clean.Alternatively, the pH value of described alkaline cleaner is between 7～10.
Referring again to Fig. 4, after the second cleaning step, partial mill by-product 41 is still had fully to dissolve
In abluent, and remain in described layers of copper 31 and dielectric layer 20 surface.As in the ground slurry of CMP
As the BTA (Benzotrizzole is called for short BTA) of corrosion inhibitor, it reacts generation with copper
By-product be more difficult to clean, thus remain in semiconductor wafer surface.
To this end, combine with reference to Fig. 4 and Fig. 5, in the present embodiment, after described second cleaning step, right
The surface of described layers of copper 31 carries out oxidation processes；Carry out the first cleaning the most again, use acidity to clean
Agent is cleaned or uses alkaline cleaner to be carried out the layers of copper 31 after oxygen processes.
In described oxidation treatment step, remain in grinding by-product 41 and the oxygen on described layers of copper 31 surface
Reaction forms the grinding by-product 42 after oxidation, and the grinding by-product 42 after oxidation is easier to clean with acid
Agent is cleaned or uses alkaline cleaner reaction, thus improves the removal efficiency grinding by-product.
Additionally, in described oxidation treatment step, described layers of copper 31 surface is the most oxidized, at described copper
Layer 31 forms one layer of copper oxide 32.In described first cleaning step, described copper oxide 32 is eliminated,
The grinding by-product 42 being attached in described oxide layer 32 is caused to be peeled off by described semiconductor crystal wafer.
In the present embodiment, the step that the layers of copper 31 after the second cleaning step is carried out oxidation processes includes:
Layers of copper 31 after second cleans is placed in air, makes layers of copper 31 and the grinding by-product on layers of copper 31 surface
Thing 41 is oxidized, forms the grinding by-product 42 after oxidation.
If it is too short that described semiconductor crystal wafer is placed in the time in air, it is unfavorable for described layers of copper 31 surface and attachment
Grinding by-product 41 in described layers of copper 31 surface is oxidized, thus reduces follow-up employing the first cleaning
Remove the effect of described grinding by-product 41；If described semiconductor crystal wafer is placed in overlong time in air, cause
Make layers of copper 31 excessively oxidated, thus reduce the removal efficiency of the copper oxide 32 that described layers of copper 31 surface is formed,
Cause layers of copper excessive loss, if additionally, semiconductor crystal wafer is placed in overlong time in air, second simultaneously
After cleaning, the composition such as the part cleanout fluid of residual and the water in air reacts, and layers of copper 31 also produces corrosion,
And then affect the performance of the semiconductor device being subsequently formed.
In the present embodiment, control described layers of copper being persistently placed in the time in air is 1～30 minute, further
Alternatively, layers of copper is persistently placed in the time in air is about 3 minutes.
Still optionally further, in described oxidation processes, the copper oxide that described layers of copper 31 surface is formed
The thickness of layer 32 is
Use the mode that the semiconductor crystal wafer after second cleans is placed in air oxidation, copper can be improved
Layer 31 oxidized controllability, can reduce again process costs.But in other embodiments in addition to the present embodiment,
Also can be passed through the modes such as oxygen, to complete in the reaction chamber of the semiconductor crystal wafer placed after second cleans
Layers of copper surface after described grinding carries out the step of oxidation processes.Above-mentioned change is all at the protection model of the present invention
In enclosing.
Referring next to Fig. 6, after described semiconductor crystal wafer is carried out oxidation processes, to described semiconductor crystal wafer
Once clean.Described first cleans as using the cleaning of acidic cleaner or using alkaline cleaner
Cleaning.
In conjunction with reference to Fig. 4, Fig. 5 and Fig. 6, remain in grinding by-product 41 and the oxygen on described layers of copper 31 surface
Reaction forms the grinding by-product 42 after oxidation, and forms one layer of copper oxide 32 in described layers of copper 31.?
In described first cleaning process, the grinding by-product 42 after oxidation is more easy to and acid (or alkalescence) abluent
Reaction, thus improve the grinding by-product removal efficiency after CMP；And described copper oxide 32 with
It is removed after abluent reaction, causes the grinding by-product being attached in described oxide layer 32 partly to be led by described
Peel off on body wafer, grind by-product removal efficiency with further raising.
In a described cleaning process, the abluent of employing is acid or alkalescence is too strong, can cause layers of copper
Excessive corrosion, according to abluent acid or alkalescence is the most weak, reduce grinding on described semiconductor crystal wafer
Mill by-product removal efficiency.
Alternatively, if first cleans the cleaning for using acidic cleaner, the pH value of described acidic cleaner
It is 3～5；If described first cleans the cleaning for using alkaline cleaner, the pH value of described alkaline cleaner is
7～10.
In the present embodiment, acidic cleaner is used described semiconductor crystal wafer once to be cleaned, further
Alternatively, the pH value of described acidic cleaner is about 5.
Use the acidic cleaner of above-mentioned pH value concentration, after can effectively removing described copper oxide 32 and oxidation
Grinding by-product 42 (with reference to Fig. 5), thus improve the removal efficiency of described grinding by-product, drop simultaneously
Low abluent is for the damage of semiconductor crystal wafer remainder.
In alternative, there is water based on layers of copper 31 remained on surface after second cleans, be unfavorable for layers of copper quilt
Oxidation.To this end, before described layers of copper is carried out oxidation processes, the cleaning side of the present embodiment semiconductor device
Method also includes, first the semiconductor crystal wafer after second cleans is carried out primary drying process, described to remove
The water on layers of copper 31 surface, improves subsequent oxidation and processes in technique, speed that layers of copper 31 is oxidized and effect.
In the present embodiment, the step that described semiconductor crystal wafer carries out primary drying process includes:
Use isopropyl acetone as desiccant, the semiconductor crystal wafer after second cleans is dried process.
Use isopropyl acetone, as desiccant, semiconductor crystal wafer is dried process, can play layers of copper 31 and be situated between
Effect that matter layer 20 surface is carried out, and dried can be reduced layers of copper 31 and dielectric layer 20 are damaged.
Certainly, in addition to using isopropyl acetone as the withering method of desiccant, also by other
Mode carries out the dried of described semiconductor crystal wafer, and it is dry that the present invention carries out first to described semiconductor crystal wafer
The method of dry process does not limits.
In alternative, after completing a described cleaning step, again described semiconductor crystal wafer is carried out
Second dried, to remove in a cleaning step, remains in the moisture of semiconductor wafer surface.
Described second dried can use isopropyl acetone as desiccant, to the quasiconductor after first cleans
Wafer is dried process.
Below by having experiment, with the advantage of cleaning method of the semiconductor device that the present embodiment provides.
Experiment one
Semiconductor crystal wafer after being cleaned by the cleaning method using above-described embodiment semiconductor device carries out X-ray
Electron spectrometer test (XPS test), is constituted analyzing layers of copper；
And the semiconductor crystal wafer work after providing the copper CMP of one piece of technique same as the previously described embodiments formation to grind
For comparative example, and with existing cleaning, acidity is used to clean described semiconductor crystal wafer is entered for several times
Row cleans, and the semiconductor crystal wafer after cleaning is carried out x-ray photoelectron spectroscopy instrument test (XPS test), with
Analysis layers of copper is constituted.
Fig. 7 is by the XPS test result of the semiconductor crystal wafer layers of copper of embodiment and the semiconductor crystal wafer of comparative example
The comparison block diagram of the XPS test result of layers of copper.Wherein, A represents copper content, B represents oxygen element
Content, C represents such as remaining impurity contents such as carbon.
Cylinder 100 is that the XPS of layers of copper in comparative example tests data, and cylinder 200 is the XPS of layers of copper in embodiment
Test data.
Contrast cylinder 100 and cylinder 200, it is found that in comparative example, impurity C component content is 9.8%, and implements
Impurity C component content in example is 7.4%.
Thus compare and traditional cleaning, the cleaning method of the semiconductor device that the present embodiment provides can
Impurity content in layers of copper in effective reduction semiconductor crystal wafer, i.e. the semiconductor device of the present embodiment offer is clear
Washing method is effectively increased the cleaning performance of semiconductor device.
Experiment two
Use identical technique, the layers of copper of above-mentioned comparative example and embodiment two block semiconductor wafer is formed
The carbide lamella (Nitrogen Doped Carbide is called for short NDC) of nitrating, at two block semiconductor wafers
Layers of copper on respectively select 4 each test points, analyze the carbide lamella of nitrating and the bonding strength of layers of copper.
Fig. 8 is the flat of the adhesion of the carbide of each test point of layers of copper on two block semiconductor wafers and nitrating
All numerical value.
Wherein, cylinder 300 is the adhesion of the carbide of layers of copper and nitrating in comparative example, and cylinder 400 is real
Execute the adhesion of the carbide of layers of copper and nitrating in example.
Contrast cylinder 300 and cylinder 400, it is found that comparative example each point is flat with the adhesion example of the carbide of nitrating
Average be 8.1 joules per cm (joule/centimetre2), in embodiment, the carbide of each point and nitrating is viscous
Accompanying examples meansigma methods is 9 joules per cm.
Analyzing reason, in embodiment, the impurity on layers of copper surface is less than comparative example layers of copper surface impurity, thus has
Effect improves the adhesion of layers of copper and the carbide of nitrating.
In the cleaning method of the semiconductor device that the present invention provides, after layers of copper is carried out CMP grinding, right
Layers of copper after grinding carries out oxidation processes；Use acidic cleaner to clean the most again or use alkalescence to clean
Agent is cleaned, and the layers of copper after oxidation is carried out the first cleaning.
To grind after layers of copper carry out oxidation processes after, make in CMP formed grinding by-product with
Oxygen reaction forms oxide, thus promotes oxidized grinding by-product to react with abluent, to improve
Grind the removal efficiency of by-product；Additionally, in described oxidation treatment step, layers of copper surface is equally by oxygen
Changing, at described layers of copper formation copper oxide in described first cleaning step, described copper oxide is eliminated,
Cause the grinding by-product being attached in described oxide layer to be peeled off by described semiconductor crystal wafer, improve and grind
The removal efficiency of by-product, improves the performance forming layers of copper after grinding, the copper-connection being subsequently formed such as reduction
The resistance of structure, and improve layers of copper and other structure bond strengths, and then improve partly leading of being subsequently formed
The performance of body device.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (13)
1. the cleaning method of a semiconductor device, it is characterised in that including:
Semiconductor crystal wafer is provided；
Described semiconductor crystal wafer is formed layers of copper；
Described layers of copper is ground with chemical mechanical milling tech；
Layers of copper surface after grinding is carried out oxidation processes；
Layers of copper after oxidation processes carries out the first cleaning, and described first cleans as using the clear of acidic cleaner
Wash or use the cleaning of alkaline cleaner.
2. the cleaning method of semiconductor device as claimed in claim 1, it is characterised in that to the copper after grinding
Layer surface carries out the step of oxidation processes and includes: the layers of copper after grinding is placed in air oxidation.
3. the cleaning method of semiconductor device as claimed in claim 2, it is characterised in that the copper after grinding
It is placed in air in the step of oxidation, described layers of copper is placed in air 1～30 minute.
4. the cleaning method of semiconductor device as claimed in claim 1, it is characterised in that described first cleans
For using the cleaning of acidic cleaner, the pH value of described acidic cleaner is 3～5.
5. the cleaning method of semiconductor device as claimed in claim 1, it is characterised in that described first cleans
For using the cleaning of alkaline cleaner, the pH value of described alkaline cleaner is 7～10.
6. the cleaning method of semiconductor device as claimed in claim 1, it is characterised in that with chemical machinery
After grinding technics grinds described layers of copper, before carrying out described oxidation processes, described cleaning method also includes:
Layers of copper after grinding is carried out the second cleaning.
7. the cleaning method of semiconductor device as claimed in claim 6, it is characterised in that described second cleans
For using the cleaning of acidic cleaner, the pH value of described acidic cleaner is 4～6.
8. the cleaning method of semiconductor device as claimed in claim 6, it is characterised in that described second cleans
For using the cleaning of alkaline cleaner, the pH value of described alkaline cleaner is 7～10.
9. the cleaning method of semiconductor device as claimed in claim 6, it is characterised in that with chemical machinery
Grinding technics grinds after described layers of copper, before carrying out described second cleaning step, also include employing go from
Sub-water carries out the 3rd cleaning to the layers of copper after grinding.
10. the cleaning method of semiconductor device as claimed in claim 1, it is characterised in that carrying out at oxidation
Before reason, described cleaning method also includes: the layers of copper after grinding is carried out the first dried.
The cleaning method of 11. semiconductor device as claimed in claim 10, it is characterised in that described first is dried
Process includes: the layers of copper before using isopropyl acetone to clean first is dried process.
The cleaning method of 12. semiconductor device as claimed in claim 1, it is characterised in that described first clear
After the step washed, the cleaning method of described semiconductor device also includes that described layers of copper carries out second to be dried
Process.
The cleaning method of 13. semiconductor device as claimed in claim 12, it is characterised in that described second is dried
Process includes: the layers of copper after using isopropyl acetone to clean first carries out the second dried.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510051612.8A CN105990219A (en) | 2015-01-30 | 2015-01-30 | Method of cleaning semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510051612.8A CN105990219A (en) | 2015-01-30 | 2015-01-30 | Method of cleaning semiconductor device |
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| CN105990219A true CN105990219A (en) | 2016-10-05 |
Family
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506722A (en) * | 2021-06-28 | 2021-10-15 | 华虹半导体(无锡)有限公司 | Cleaning method of copper interconnection structure |
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|---|---|---|---|---|
| US6150269A (en) * | 1998-09-11 | 2000-11-21 | Chartered Semiconductor Manufacturing Company, Ltd. | Copper interconnect patterning |
| US20030089891A1 (en) * | 2001-10-16 | 2003-05-15 | Andreas Michael T. | CMP cleaning composition with microbial inhibitor |
| CN102446821A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Method used for reducing copper interconnection structure material damage after chemical machinery polishing |
| CN103107126A (en) * | 2009-02-16 | 2013-05-15 | 爱思开海力士有限公司 | Method for forming copper wiring in a semiconductor device |
| US20140256133A1 (en) * | 2013-03-06 | 2014-09-11 | International Business Machines Corporation | Post metal chemical-mechanical planarization cleaning process |
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- 2015-01-30 CN CN201510051612.8A patent/CN105990219A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6150269A (en) * | 1998-09-11 | 2000-11-21 | Chartered Semiconductor Manufacturing Company, Ltd. | Copper interconnect patterning |
| US20030089891A1 (en) * | 2001-10-16 | 2003-05-15 | Andreas Michael T. | CMP cleaning composition with microbial inhibitor |
| CN103107126A (en) * | 2009-02-16 | 2013-05-15 | 爱思开海力士有限公司 | Method for forming copper wiring in a semiconductor device |
| CN102446821A (en) * | 2011-08-29 | 2012-05-09 | 上海华力微电子有限公司 | Method used for reducing copper interconnection structure material damage after chemical machinery polishing |
| US20140256133A1 (en) * | 2013-03-06 | 2014-09-11 | International Business Machines Corporation | Post metal chemical-mechanical planarization cleaning process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113506722A (en) * | 2021-06-28 | 2021-10-15 | 华虹半导体(无锡)有限公司 | Cleaning method of copper interconnection structure |
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