CN105988300B - method for optical proximity correction - Google Patents
method for optical proximity correction Download PDFInfo
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- CN105988300B CN105988300B CN201510058385.1A CN201510058385A CN105988300B CN 105988300 B CN105988300 B CN 105988300B CN 201510058385 A CN201510058385 A CN 201510058385A CN 105988300 B CN105988300 B CN 105988300B
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- contour line
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- targeted graphical
- optical proximity
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Abstract
The present invention provides a kind of method for optical proximity correction.Methods described includes：By the contour line of all targeted graphicals to external expansion preset distance；The targeted graphical that contour line after selection extension is in contact with the contour line after the extension of other targeted graphicals；And rotated selected targeted graphical, so that the contour line after the extension of selected targeted graphical is not in contact with the contour line after the extension of other targeted graphicals, and inputted postrotational targeted graphical as the target for optical proximity correction.Method provided by the present invention for optical proximity correction can increase the free degree of optical proximity correction, and simple to operate, it is easy to accomplish.
Description
Technical field
The present invention relates to technical field of semiconductors, is used for optical proximity correction (Optical in particular to one kind
Proximity Correction, OPC) method.
Background technology
With the complexity more and more higher of integrated circuit, characteristic size also becomes less and less.When the feature of integrated circuit
Be closely sized to the system limits of photo-etching machine exposal, i.e., when characteristic size is close to or smaller than photolithography light source, the version that is produced on silicon chip
Obvious distortion occurs in figure, and the phenomenon is referred to as optical proximity effect.In order to tackle optical proximity effect, it is proposed that resolution ratio increases
Strong technology.Wherein, optical proximity correction (i.e. OPC) turns into most important technology.
OPC mainly reduces the deviation of litho pattern by changing the shape of former chip mask plate patterns, such as in reality
Processing is directly optimized in the makeover process of border to targeted graphical, obtains amendment scheme.The optimization processing for example carries out OPC edges
It is mobile.The free degree of existing OPC edges movement is smaller, such as the targeted graphical for contact hole (contact), OPC edges
Movement is only capable of carrying out in either the vertical or horizontal direction.Further, since checked (Mask Rule Check, MRC) by light shield rule
The limitation of rule, after the movement of OPC edges orthogonal edges may be caused to be laid out (placement) error.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of method for optical proximity correction, and methods described includes：
By the contour line of all targeted graphicals to external expansion preset distance；The extension of contour line and other targeted graphicals after selection extension
The targeted graphical that contour line afterwards is in contact；And rotated selected targeted graphical, so that selected target figure
Contour line after the extension of shape is not in contact with the contour line after the extension of other targeted graphicals, and by postrotational targeted graphical
As the target input for optical proximity correction.
In one embodiment of the invention, it is described selected targeted graphical is subjected to rotation to include selected mesh
Shape of marking on a map rotates a certain angle to a direction, and wherein direction of rotation and the anglec of rotation depends on whole layout design.
In one embodiment of the invention, the anglec of rotation is 45 degree.
In one embodiment of the invention, the direction of rotation is counterclockwise.
In one embodiment of the invention, the preset distance is the half of design rule size.
In one embodiment of the invention, methods described is the optical proximity correction for contact hole layer.
In one embodiment of the invention, the selected targeted graphical include the contour line after four extensions with
The targeted graphical that contour line after the extension of other targeted graphicals is in contact.
Method provided by the present invention for optical proximity correction can increase the free degree of optical proximity correction, and
It is simple to operate, it is easy to accomplish.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 shows the example of existing OPC edges movement；
Fig. 2 shows the example that the movement of existing targeted graphical is moved for OPC edges；
Fig. 3 shows the example that the cutting of existing targeted graphical is moved for OPC edges；
Fig. 4 shows the flow chart of the method according to an embodiment of the invention for optical proximity correction；
Fig. 5 shows the example of method using Fig. 4 to the optical proximity correction of contact hole；And
Fig. 6 shows the example of the optical proximity correction in accordance with another embodiment of the present invention to contact hole.
Embodiment
In the following description, a large amount of concrete details are given to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention can be able to without one or more of these details
Implement.In other examples, in order to avoid obscuring with the present invention, do not enter for some technical characteristics well known in the art
Row description.
It should be appreciated that the present invention can be implemented in different forms, and it should not be construed as being limited to what is proposed here
Embodiment.On the contrary, providing these embodiments disclosure will be made thoroughly and complete, and will fully convey the scope of the invention to
Those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when in this specification in use, determining the feature, whole
Number, step, operation, the presence of element and/or part, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of element, part and/or group.Herein in use, term "and/or" includes any and institute of related Listed Items
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, but except these detailed descriptions
Outside, the present invention can also have other embodiment.
OPC has become critical size control and the indispensable approach of Yield lmproved in integrated circuit fabrication process.It is logical
Modification design configuration is crossed to pre-compensate for process deviation to improve the reducing power of image and resolution.
Fig. 1 shows the example of existing OPC edges movement, in Fig. 1 using contact hole as example.As shown in figure 1, for
The targeted graphical of contact hole, the movement of OPC edges are only capable of carrying out in either the vertical or horizontal direction.Further, since by MRC rules
Limitation, after the movement of OPC edges orthogonal edges may be caused to be laid out error.In order to overcome above-mentioned error, existing method is generally wrapped
The movement of targeted graphical and the cutting of targeted graphical are included, description below is still by taking contact hole as an example.
Fig. 2 shows the example that the movement of existing targeted graphical is moved for OPC edges.As shown in Fig. 2 target figure
Shape intersects after the movement of OPC edges with the OPC edges of other targeted graphicals, violates the regulation of MRC rules.Therefore, in order to
Manufacture more spaces to move for OPC edges, targeted graphical is moved (to be shown as the targeted graphical of top in Fig. 1
Moved to upper right side).However, this method is conditional：In geometric aspects, if in the range of the pitch (pitch) of minimum,
Pattern is there may be, therefore no space can move；In design aspect, mobile may bring of targeted graphical changes device
Risk.
Fig. 3 shows the example that the cutting of existing targeted graphical is moved for OPC edges.As shown in figure 3, target figure
The cutting of shape can be the free degree of OPC edges movement increase both direction.However, not only algorithm is complicated for the cutting of targeted graphical
It is difficult to, it is also possible to cause OPC convergence problems.
Embodiments of the invention provide a kind of method for optical proximity correction, and this method need not carry out the mesh of complexity
Shape of marking on a map is mobile or cuts, but targeted graphical is rotated, and twiddle factor is added to the parameter of OPC iteration movement, no
It is only simple to operate, and be not in OPC convergence problems.Fig. 4, which is shown, according to an embodiment of the invention is used for optics
The flow chart of the method 400 of neighbouring amendment.As shown in figure 4, method 400 comprises the following steps：
Step 401：By the contour line of all targeted graphicals to external expansion preset distance；
Step 402：The target that contour line after selection extension is in contact with the contour line after the extension of other targeted graphicals
Figure；
Step 403：Selected targeted graphical is rotated, so that the profile after the extension of selected targeted graphical
Line is not in contact with the contour line after the extension of other targeted graphicals, and using postrotational targeted graphical as being used for optical adjacent
The target input of amendment.
Wherein, in step 401, preset distance for example can be DR/2, and wherein DR is design rule size.In step
In 402, if the contour line after targeted graphical extension is in contact with the contour line after the extension of other targeted graphicals, selection should
Targeted graphical.In step 403, targeted graphical selected in step 402 is rotated into a certain angle, example along a direction
Such as along 45 degree of counterclockwise rotates so that contour line after the extension of selected targeted graphical not with other targeted graphicals
Extension after contour line be in contact.Direction of rotation and the anglec of rotation can depend on whole layout design, so, by target figure
Shape rotate the extension that can cause selected targeted graphical along the direction that domain allows after contour line not with other targets
The angle that contour line after the extension of figure is in contact, the free degree in the nonopiate direction of OPC edges movement can be obtained.
Fig. 5 shows the example of method using Fig. 4 to the optical proximity correction of contact hole.As shown in figure 5, these targets
Edge after graphic extension intersects with the edge after the extension of other targeted graphicals, can be rotated these targeted graphicals.
From figure 5 it can be seen that the edge after rotation after each of which extension is just no longer intersecting, MRC rules will not be violated.
Fig. 6 shows the example of the optical proximity correction in accordance with another embodiment of the present invention to contact hole.In the reality
Apply in example, have selected the target figure that the contour line after four extensions is in contact with the contour line after the extension of other targeted graphicals
Shape is rotated, as shown in fig. 6, after targeted graphical rotation, contour line after four of targeted graphical extensions no longer with its
Contour line after the extension of his targeted graphical is in contact, and will not violate MRC rules.
It will appreciated by the skilled person that above described according to an embodiment of the invention by taking contact hole as an example
The method for optical proximity correction, but be only an example to the optical proximity correction of contact hole, implemented according to the present invention
The method for optical proximity correction of example, which can be applicable to any other, needs OPC application.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in described scope of embodiments.In addition people in the art
Member can also make more kinds of it is understood that the invention is not limited in above-described embodiment according to the teachings of the present invention
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (7)
- A kind of 1. method for optical proximity correction, it is characterised in that methods described includes：By the contour line of all targeted graphicals to external expansion preset distance；After the extension of contour line and other targeted graphicals in all targeted graphicals expanded from contour line after selection extension The targeted graphical that contour line is in contact；AndSelected targeted graphical is rotated so that the contour line after the extension of selected targeted graphical not with other mesh Contour line after the extension for shape of marking on a map is in contact, and postrotational targeted graphical is defeated as the target for optical proximity correction Enter.
- 2. the method as described in claim 1, it is characterised in that described selected targeted graphical is subjected to rotation to include institute The targeted graphical of selection rotates a certain angle to a direction, and wherein direction of rotation and the anglec of rotation are set depending on whole domain Meter.
- 3. method as claimed in claim 2, it is characterised in that the anglec of rotation is 45 degree.
- 4. method as claimed in claim 2, it is characterised in that the direction of rotation is counterclockwise.
- 5. the method as described in claim 1, it is characterised in that the preset distance is the half of design rule size.
- 6. such as the method any one of claim 1-5, it is characterised in that methods described is the optics for contact hole layer Neighbouring amendment.
- 7. method as claimed in claim 6, it is characterised in that the selected targeted graphical includes the wheel after four extensions The targeted graphical that profile is in contact with the contour line after the extension of other targeted graphicals.
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| CN201510058385.1A CN105988300B (en) | 2015-02-04 | 2015-02-04 | method for optical proximity correction |
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| CN201510058385.1A CN105988300B (en) | 2015-02-04 | 2015-02-04 | method for optical proximity correction |
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| CN105988300A CN105988300A (en) | 2016-10-05 |
| CN105988300B true CN105988300B (en) | 2018-03-30 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107133944B (en) * | 2017-04-27 | 2020-02-07 | 上海华虹宏力半导体制造有限公司 | Graph classification method for OPC verification |
| CN106919009B (en) * | 2017-05-08 | 2019-05-03 | 上海华力微电子有限公司 | Figure preprocess method before optical near-correction |
| CN108132580B (en) * | 2017-12-21 | 2020-12-25 | 上海华力微电子有限公司 | Method for removing bevel edge bulge |
| CN111324003B (en) * | 2018-12-14 | 2023-10-13 | 夏泰鑫半导体(青岛)有限公司 | Method for correcting photomask pattern |
| CN111766759A (en) * | 2019-04-01 | 2020-10-13 | 中芯国际集成电路制造（天津）有限公司 | Method for forming mask pattern |
| CN110058485B (en) * | 2019-05-09 | 2022-04-22 | 上海华力微电子有限公司 | OPC correction method and OPC correction system |
| CN110716387B (en) * | 2019-11-26 | 2022-10-21 | 上海华力集成电路制造有限公司 | Scattering strip adding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1570760A (en) * | 2003-07-15 | 2005-01-26 | 南亚科技股份有限公司 | Correction for optical proximity effect of contact hole, mask and semiconductor device manufacturing method |
| CN1612049A (en) * | 2003-10-27 | 2005-05-04 | 国际商业机器公司 | Method for executing optical near correction based on model |
| CN1760764A (en) * | 2004-10-12 | 2006-04-19 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW548710B (en) * | 2002-06-06 | 2003-08-21 | Macronix Int Co Ltd | Method for forming semiconductor hole and contact hole and implantation process |
| JP5380703B2 (en) * | 2009-03-06 | 2014-01-08 | ルネサスエレクトロニクス株式会社 | Mask manufacturing method and semiconductor device manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1570760A (en) * | 2003-07-15 | 2005-01-26 | 南亚科技股份有限公司 | Correction for optical proximity effect of contact hole, mask and semiconductor device manufacturing method |
| CN1612049A (en) * | 2003-10-27 | 2005-05-04 | 国际商业机器公司 | Method for executing optical near correction based on model |
| CN1760764A (en) * | 2004-10-12 | 2006-04-19 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
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