CN105986248A - Relaxation-resisting coating method for atom gas chamber - Google Patents
Relaxation-resisting coating method for atom gas chamber Download PDFInfo
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- CN105986248A CN105986248A CN201510094655.4A CN201510094655A CN105986248A CN 105986248 A CN105986248 A CN 105986248A CN 201510094655 A CN201510094655 A CN 201510094655A CN 105986248 A CN105986248 A CN 105986248A
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- air chamber
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Abstract
The invention belongs to a coating method for an atom gas chamber, and particularly relates to a relaxation-resisting coating method for an atom gas chamber. The method comprises the following steps: 1, cleaning the inner wall of the gas chamber with a Piranha solution; 2, rinsing the gas chamber with deionized pure water; 3, degassing the gas chamber at a high temperature; 4, activating the wall of the gas chamber and preparing for coating; 5, preparing an OTS solution; 6, soaking the to-be-coated wall of the gas chamber in the coating solution; 7, washing the inner wall of the gas chamber with chloroform; and 8, performing coating curing and postprocessing. The method has the advantages as follows: the problem of relaxation caused by the reason that an atom spinning direction is changed due to collisions between a spinning atom and the inner wall of the gas chamber is solved; besides, the processing steps of relaxation-resisting coating of the inner wall of the gas chamber are provided according to the relaxation-resisting requirement of a coating on the inner wall of the gas chamber so as to guarantee the feasibility of the method.
Description
Technical field
The invention belongs to the film plating process of a kind of atomic air chamber, be specifically related to the anti-relaxation of a kind of atomic air chamber
Film plating process.
Background technology
Developing rapidly of atom technology causes atomic air chamber demand to increase.In air chamber, atom relaxation is to weigh
Atomic spin maintains the index of dead axle ability, and the friction being similar in rotor gyro, relaxation gets over I analogy
Less for friction.The collision of atomic spin and air chamber inwall can change atomic spin and point to and cause relaxation.
With the reduction of atomic air chamber size, atomic spin increases with the collision rate of air chamber inwall, causes relaxation
Increase, become restriction atom laser gyroscope size reduction, the bottleneck of performance raising.Existing common coating technique
It is mainly used in improving the optical characteristics of glass components, or increase the anticorrosive pollution of material surface, reduce and rub
The functions such as wiping, the application in terms of improving atomic spin relaxation is less.The coating process simultaneously commonly used is general
For plane, outer surface plated film, for through the three-dimensional surface plated film to air chamber inwall for the elongated blast pipe
Technique less.Accordingly, it would be desirable to research atomic air chamber anti-relaxation inwall coating technique, relate generally to film layer
Material selects and coating process.
Content of the invention
It is an object of the invention to provide a kind of atomic air chamber inwall anti-relaxation film plating process, it can be less
Under the premise of atomic air chamber size, it is achieved the atomic spin longer relaxation time, improve the precision of atom laser gyroscope,
Follow-up ultrahigh vacuum can be met simultaneously and process demand, it is ensured that atomic purity.
The present invention is achieved in that a kind of atomic air chamber inwall anti-relaxation film plating process, and it includes as follows
Step:
The first step: use " Piranha " solution purgative gas chamber interior walls；
Second step: with the rinsing of deionization pure water；
3rd step: high-temperature degassing is carried out to air chamber；
4th step: activate air chamber wall, prepares before carrying out plated film；
5th step: preparation OTS solution；
6th step: make air chamber wall to be coated soak in coated solution；
7th step: air chamber inwall is rinsed with chloroform；
8th step: the solidification of film layer and post processing.
The described first step is for preparing appropriate cleaning with " Piranha " according to air chamber quantity to be coated and volume
Solution, amount of solution need to meet after filling air chamber can whole submergence air chambers, solution composition is: volume ratio
For the mixed solution of the hydrogen peroxide of 3:7 and concentrated sulfuric acid solution, inject solution in air chamber, and will fill
The air chamber of solution is placed in and holds in " Piranha " solution beaker, and liquid level need to not have air chamber, puts this beaker
Entering and carrying out Ultrasonic Cleaning in ultrasonic wave service sink, aforesaid operations need to be carried out in laboratory hood.
Described second step is to take out the air chamber completing Ultrasonic Cleaning in beaker, and by air chamber
Cleaning solution is transferred in same beaker, and the solution in beaker is recycled, and uses pure water pair
Air chamber repeatedly rinses and combines ultrasonic cleaning apparatus and carries out ultrasonic activation cleaning, until using
100ml water rinses 22cm2Surface area to be cleaned when, collected flushing electrical conductivity of water be less than 3 μ S/cm.
The 3rd described step for being placed in the air chamber cleaning up in vacuum furnace, use the highest 500 DEG C,
10-4Pa vacuum carries out high temperature high vacuum degasification.
The 4th described step is for being placed in the dry air chamber completing degasification in the local clean environment of humidity 90%
10min, makes air chamber inwall attachment micro-moisture, as the catalyst of OTS long-chain and glass polymerization.
The 5th described step is for preparing appropriate coated solution according to air chamber capacity to be coated, and solution proportion is: 1
Part+4 parts of n-hexanes of chloroform are configured to solvent, and every 1 liter of solvent adds the OTS of 0.8ml.
The 6th described step, for coated solution being injected air chamber to be coated and being full of, makes liquid level just exist
Blast pipe and the interface of air chamber.Pour out solution after standing 5～10min, test specimen is placed in atmosphere
5min。
The 7th described step is rinsed for using all surfaces to OTS plated film for the chloroform to carry out more than five times, uses
It is not integrated into the OTS molecule of glass surface in removal.
The 8th described step for being connected on vaccum bench and being removed by vavuum pump the chloroform of remnants by air chamber.Take out true
In null process, heating air chamber to 150 DEG C and keeps 48h, makes to be formed between independent strand crosslinking.Complete
Become air chamber inwall coating operation.
It is an advantage of the invention that 1) OTS film layer is used for atomic air chamber inwall, as anti-atomic spin
Relaxation is applied, and solves the inelastic collision of atomic spin and the non-coated surface of air chamber inwall and changes former
The problem that son spin is pointed to, plays the effect extending atomic spin relaxation time；2) coated solution liquid is passed through
The control realization film layer position of face height is controlled, has both made air chamber inwall three-dimensional surface all be covered by the film layer,
Again retain blast pipe inwall without related film layer, in follow-up vacuum exhaust platform access operation, will not produce because of
Localized hyperthermia causes film layer to damage thus forms the indoor impurity of residue gas；3) air chamber wall before air chamber plated film
Activation processes technique, both ensure that reaction speed in turn ensure that film quality；4) process must be solidified after plated film
Technique, in conjunction with vacuumizing, it is achieved the solidification of film layer, promotes the film layer life-span.OTS coating technique is at gas
The application of chamber interior walls, solves the collision of atomic spin and air chamber inwall and changes atomic spin and point to and cause
The problem of relaxation；Additionally, require according to the anti-relaxation of air chamber inside wall film layer, it is proposed that the anti-relaxation of air chamber inwall
The processing step of plated film, it is ensured that the feasibility of this technology.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail:
In the following description, the nonrestrictive purpose for explanation, elaborates detail, with side
Help and be apparent from the present invention.It is however obvious for a person skilled in the art that, it is also possible to
The present invention is put into practice in the other embodiments departing from these details.Below to embodiments of the invention
Illustrate.
A kind of atomic air chamber inwall anti-relaxation film plating process, it comprises the steps:
The first step: use " Piranha " solution purgative gas chamber interior walls
Prepare appropriate cleaning with " Piranha " solution according to air chamber quantity to be coated and volume.Amount of solution needs
Meeting after filling air chamber can whole submergence air chamber.Solution composition is: volume ratio is the peroxidating of 3:7
Hydrogen and the mixed solution of concentrated sulfuric acid solution.Inject solution in air chamber, and the air chamber filling solution is placed in
Holding in " Piranha " solution beaker, liquid level need to not have air chamber.This beaker is put into Ultrasonic Cleaning pond
In carry out Ultrasonic Cleaning.Aforesaid operations need to be carried out in laboratory hood, and the measure that properly protects, it is to avoid acid
Operator and environment are impacted by mist；
Second step: with the rinsing of deionization pure water
The air chamber completing Ultrasonic Cleaning is taken out in beaker, and the cleaning solution in air chamber is transferred to
In same beaker, and the solution in beaker is recycled.Pure water is used repeatedly to rush air chamber
Wash and combine ultrasonic cleaning apparatus and carry out ultrasonic activation cleaning, until using 100ml water to rinse about
During the surface area to be cleaned of 22cm2, collected flushing electrical conductivity of water is less than 3 μ S/cm；
3rd step: high-temperature degassing is carried out to air chamber
It is placed in the air chamber cleaning up in vacuum furnace, use the highest 500 DEG C, 10-4Pa vacuum to carry out
High temperature high vacuum degasification；
4th step: activate air chamber wall, prepares before carrying out plated film
The dry air chamber completing degasification is placed in 10min in the local clean environment of humidity 90%, in making air chamber
Wall adheres to micro-moisture, as the catalyst of OTS long-chain and glass polymerization.
5th step: preparation OTS solution
Prepare appropriate coated solution according to air chamber capacity to be coated.Solution proportion is: 1 part of chloroform+4 parts is just
Hexane is configured to solvent, and every 1 liter of solvent adds the OTS of 0.8ml；
6th step: make air chamber wall to be coated soak certain time in coated solution
Coated solution injected air chamber to be coated and is full of, making liquid level just at blast pipe and air chamber
Interface.Pour out solution after standing 5～10min, test specimen is placed in atmosphere 5min；
7th step: air chamber inwall is rinsed with chloroform
Use all surfaces to OTS plated film for the chloroform to carry out more than five times to rinse, be not bound with for removal
OTS molecule at glass surface；
8th step: the solidification of film layer and post processing
Air chamber is connected on vaccum bench and is removed by vavuum pump the chloroform of remnants.In vacuum, heating
Air chamber is to 150 DEG C and keeps 48h, makes to be formed between independent strand crosslinking.Complete air chamber inwall plated film
Operation.
Claims (9)
1. the anti-relaxation film plating process of an atomic air chamber inwall, it is characterised in that: it comprises the steps:
The first step: use " Piranha " solution purgative gas chamber interior walls；
Second step: with the rinsing of deionization pure water；
3rd step: high-temperature degassing is carried out to air chamber；
4th step: activate air chamber wall, prepares before carrying out plated film；
5th step: preparation OTS solution；
6th step: make air chamber wall to be coated soak in coated solution；
7th step: air chamber inwall is rinsed with chloroform；
8th step: the solidification of film layer and post processing.
2. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The described first step uses " Piranha " solution for preparing appropriate cleaning according to air chamber quantity to be coated and volume,
Amount of solution need to meet after filling air chamber can whole submergence air chambers, solution composition is: volume ratio is 3:7
Hydrogen peroxide and the mixed solution of concentrated sulfuric acid solution, inject solution in air chamber, and solution will be filled
Air chamber is placed in and holds in " Piranha " solution beaker, and liquid level need to not have air chamber, puts into ultrasonic by this beaker
Carrying out Ultrasonic Cleaning in ripple service sink, aforesaid operations need to be carried out in laboratory hood.
3. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
Described second step is to take out the air chamber completing Ultrasonic Cleaning in beaker, and by the cleaning in air chamber
Solution is transferred in same beaker, and the solution in beaker is recycled, and uses pure water to air chamber
Repeatedly rinse and combine ultrasonic cleaning apparatus and carry out ultrasonic activation cleaning, until using 100ml
Water rinses 22cm2Surface area to be cleaned when, collected flushing electrical conductivity of water be less than 3 μ S/cm.
4. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 3rd described step for being placed in the air chamber cleaning up in vacuum furnace, use the highest 500 DEG C,
10-4Pa vacuum carries out high temperature high vacuum degasification.
5. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 4th described step is for being placed in the dry air chamber completing degasification in the local clean environment of humidity 90%
10min, makes air chamber inwall attachment micro-moisture, as the catalyst of OTS long-chain and glass polymerization.
6. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 5th described step is for preparing appropriate coated solution according to air chamber capacity to be coated, and solution proportion is: 1 part
+ 4 parts of n-hexanes of chloroform are configured to solvent, and every 1 liter of solvent adds the OTS of 0.8ml.
7. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 6th described step, for coated solution being injected air chamber to be coated and being full of, makes liquid level just in exhaust
Pipe and the interface of air chamber.Pour out solution after standing 5～10min, test specimen is placed in atmosphere 5min.
8. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 7th described step is rinsed for using all surfaces to OTS plated film for the chloroform to carry out more than five times, is used for
Except the OTS molecule being not integrated into glass surface.
9. a kind of atomic air chamber inwall anti-relaxation film plating process as claimed in claim 1, it is characterised in that:
The 8th described step for being connected on vaccum bench and being removed by vavuum pump the chloroform of remnants by air chamber.Vacuumized
Cheng Zhong, heating air chamber to 150 DEG C and keeps 48h, makes to be formed between independent strand crosslinking.Complete gas
Chamber interior walls coating operation.
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| CN201510094655.4A CN105986248B (en) | 2015-03-03 | 2015-03-03 | A kind of anti-relaxation film plating process of atomic air chamber |
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| CN201510094655.4A CN105986248B (en) | 2015-03-03 | 2015-03-03 | A kind of anti-relaxation film plating process of atomic air chamber |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106746719A (en) * | 2016-11-22 | 2017-05-31 | 中国人民解放军国防科学技术大学 | A kind of composite construction film layer and plating method for extending the magnetometer relaxation time |
| CN109518177A (en) * | 2018-11-30 | 2019-03-26 | 北京航空航天大学 | A kind of alkali metal gas chamber production method promoting the anti-Relaxivity of coating based on Plasma hydroxylating |
| CN110357451A (en) * | 2019-05-31 | 2019-10-22 | 北京航空航天大学 | A kind of anti-relaxation coating and alkali metal gas chamber and method |
| CN111024123A (en) * | 2019-12-18 | 2020-04-17 | 北京航空航天大学 | Method for manufacturing multi-layer OTS coating in alkali metal air chamber |
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| US6286524B1 (en) * | 1998-02-27 | 2001-09-11 | Kabushiki Kaisha Toshiba | Wafer drying apparatus and method with residual particle removability enhancement |
| US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
| US20080131623A1 (en) * | 2006-11-28 | 2008-06-05 | Wei Zhang | Method and apparatus to apply surface release coating for imprint mold |
| CN102557478A (en) * | 2011-12-19 | 2012-07-11 | 陕西科技大学 | Method for treating hydrophilic glass substrate by ultraviolet irradiation and phenyltrichlorosilane (PTCS) monolayer treatment technologies |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6286524B1 (en) * | 1998-02-27 | 2001-09-11 | Kabushiki Kaisha Toshiba | Wafer drying apparatus and method with residual particle removability enhancement |
| US20040003828A1 (en) * | 2002-03-21 | 2004-01-08 | Jackson David P. | Precision surface treatments using dense fluids and a plasma |
| US20080131623A1 (en) * | 2006-11-28 | 2008-06-05 | Wei Zhang | Method and apparatus to apply surface release coating for imprint mold |
| CN102557478A (en) * | 2011-12-19 | 2012-07-11 | 陕西科技大学 | Method for treating hydrophilic glass substrate by ultraviolet irradiation and phenyltrichlorosilane (PTCS) monolayer treatment technologies |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106746719A (en) * | 2016-11-22 | 2017-05-31 | 中国人民解放军国防科学技术大学 | A kind of composite construction film layer and plating method for extending the magnetometer relaxation time |
| CN109518177A (en) * | 2018-11-30 | 2019-03-26 | 北京航空航天大学 | A kind of alkali metal gas chamber production method promoting the anti-Relaxivity of coating based on Plasma hydroxylating |
| CN109518177B (en) * | 2018-11-30 | 2020-09-29 | 北京航空航天大学 | Method for manufacturing alkali metal air chamber for improving relaxation resistance of coating based on Plasma hydroxylation |
| CN110357451A (en) * | 2019-05-31 | 2019-10-22 | 北京航空航天大学 | A kind of anti-relaxation coating and alkali metal gas chamber and method |
| CN111024123A (en) * | 2019-12-18 | 2020-04-17 | 北京航空航天大学 | Method for manufacturing multi-layer OTS coating in alkali metal air chamber |
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| CN105986248B (en) | 2018-08-28 |
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